CN111834385B - Backside illuminated image sensor and manufacturing method thereof - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 41
- 238000001259 photo etching Methods 0.000 claims abstract description 5
- 238000002955 isolation Methods 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 29
- 239000007769 metal material Substances 0.000 claims description 25
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 abstract description 182
- 239000002346 layers by function Substances 0.000 abstract description 17
- 238000000206 photolithography Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000003550 marker Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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Abstract
The invention provides a back-illuminated image sensor and a manufacturing method thereof. The manufacturing method comprises the following steps: providing a bonded wafer comprising a carrier wafer and a device wafer, wherein the front surface of the device wafer is attached to the carrier wafer, and a reference mark structure is formed in the device wafer; and forming a ground layer on the back of the device wafer and forming an opening in the ground layer, wherein the opening is positioned right above the reference mark structure, and in the subsequent photoetching process, the reference mark structure can be identified through the opening, so that the patterned functional layer formed on the ground layer in the subsequent process can take the reference mark structure as an alignment reference, the alignment precision of the functional layer and the pattern in the device wafer can be improved, and the performance of the back-illuminated image sensor can be improved. The invention also provides a back-illuminated image sensor manufactured by the manufacturing method of the back-illuminated image sensor.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a back-illuminated image sensor and a manufacturing method thereof.
Background
Fig. 1 is a schematic cross-sectional view of a conventional back-illuminated image sensor. Referring to fig. 1, in a process of fabricating a backside illuminated image sensor (BSI), the following steps are included: a) Bonding the front surface of the device wafer 120 with the pattern formed therein with the carrier wafer 110 to form a bonded wafer; b) Forming a ground layer 130 on the back side of the device wafer 120, where the ground layer 130 includes a dielectric layer 131 and a metal material layer 132 (e.g., an aluminum metal layer), and a ground mark structure 133 is formed on the ground layer 130; c) A grating isolation layer 140 is formed on the ground layer 130, and the grating isolation layer 140 is patterned.
In the above patterning process, the ground mark structure 133 on the ground layer 130 is usually selected as an alignment reference, i.e. the resulting patterned grating isolation layer uses the ground mark structure as an alignment reference. However, in the process of manufacturing the back side illuminated image sensor, the overlay accuracy of the ground layer 130 is easily changed, which results in poor alignment accuracy between the patterned grating isolation layer 140 using the ground mark structure 133 as an alignment reference and the pattern in the device wafer 120. In order to improve the alignment accuracy between the grating isolation layer and the patterns in the device wafer, an engineer is usually required to update the compensation value of the alignment accuracy of the grating isolation layer according to the variation of the alignment accuracy of the ground layer, which affects the process efficiency.
Disclosure of Invention
The invention provides a manufacturing method of a back-illuminated image sensor, which can improve the alignment precision of functional layers such as a grating isolation layer formed on a grounding layer in the back-illuminated image sensor and patterns in a device wafer, and improve the performance of the back-illuminated image sensor. The invention also provides a back-illuminated image sensor manufactured by the manufacturing method of the back-illuminated image sensor.
An aspect of the present invention provides a method of fabricating a back-illuminated image sensor, the method comprising:
providing a bonded wafer, wherein the bonded wafer comprises a carrier wafer and a device wafer with a pattern formed inside, the device wafer is provided with a front surface and a back surface which are opposite, the front surface of the device wafer is attached to the carrier wafer, and a reference mark structure is formed in the device wafer;
forming a ground layer on the back surface of the device wafer and forming an opening in the ground layer, wherein the opening is located right above the reference mark structure, and in a subsequent photolithography process, the reference mark structure can be identified through the opening.
Optionally, the manufacturing method further includes:
forming a patterned grating isolation layer on the grounding layer by taking the reference mark structure as an alignment reference; and
and forming a grating on the patterned grating isolation layer.
Optionally, the ground layer includes a dielectric layer and a metal material layer, the dielectric layer covers the back surface of the device wafer, and the metal material layer is formed on the upper surface of the dielectric layer.
Optionally, the step of forming the opening in the ground layer includes:
forming a patterned photoresist layer on the ground layer; and
and etching the grounding layer by taking the patterned photoresist layer as a mask and stopping on the upper surface of the dielectric layer to form the opening, wherein the opening penetrates through the metal material layer.
Another aspect of the present invention provides a back-illuminated image sensor, including:
the wafer bonding method comprises the steps that a bonded wafer comprises a carrier wafer and a device wafer with a pattern formed inside, the device wafer is provided with a front surface and a back surface which are opposite to each other, the front surface of the device wafer is attached to the carrier wafer, and a reference mark structure is formed in the device wafer;
and the ground layer covers the back surface of the device wafer, an opening is formed in the ground layer and is positioned right above the reference mark structure, and the reference mark structure can be identified through the opening in the photoetching process.
Optionally, the ground layer includes a dielectric layer and a metal material layer, the dielectric layer covers the back surface of the device wafer, and the metal material layer is formed on the upper surface of the dielectric layer.
Optionally, the opening exposes a part of the upper surface of the dielectric layer, and the opening penetrates through the metal material layer.
Optionally, the device wafer includes an active region and a peripheral region, and the fiducial mark structure is formed in the peripheral region.
Optionally, the device wafer includes a substrate layer, the substrate layer has opposite front and back surfaces, the front surface of the substrate layer is close to the carrier wafer, the fiducial mark structure is formed on the front surface of the substrate layer, an interconnection layer is further formed on the front surface of the substrate layer, and the interconnection layer covers the fiducial mark structure.
Optionally, a patterned grating isolation layer is formed on the ground layer, and the patterned grating isolation layer takes the reference mark structure as an alignment reference, and a grating is formed on the grating isolation layer.
The manufacturing method of the back side illumination type image sensor comprises the following steps: providing a bonded wafer, wherein the bonded wafer comprises a carrier wafer and a device wafer with a pattern formed inside, the device wafer is provided with a front surface and a back surface which are opposite, the front surface of the device wafer is attached to the carrier wafer, and a reference mark structure is formed in the device wafer; forming a ground layer on the back of the device wafer and forming an opening in the ground layer, wherein the opening is located right above the reference mark structure, and in a subsequent photolithography process, the reference mark structure can be identified through the opening, so that a functional layer such as a patterned grating isolation layer formed on the ground layer in the subsequent process can be used as an alignment reference, and the functional layer formed in the subsequent process can be directly aligned with a pattern in the device wafer without being aligned with the pattern in the device wafer in an indirect mode, such as by using the ground mark structure as the alignment reference, thereby avoiding the influence of the change of the alignment precision of the ground layer on the alignment precision of the functional layer and the device wafer, namely improving the alignment precision of the functional layer formed in the subsequent process and the pattern in the device wafer, and improving the performance of the back-illuminated image sensor.
In the back-illuminated image sensor, the ground layer formed on the back surface of the device wafer is provided with the opening, the opening is positioned right above the reference mark structure in the device wafer, and the reference mark structure can be identified through the opening in the photoetching process, so that a functional layer such as a patterned grating isolation layer formed on the ground layer in the follow-up process can be used as an alignment reference by the reference mark structure, the functional layer formed in the follow-up process can be directly aligned with a pattern in the device wafer, the alignment accuracy of the functional layer and the pattern in the device wafer can be improved, and the performance of the back-illuminated image sensor is improved.
Drawings
Fig. 1 is a schematic cross-sectional view of a conventional back-illuminated image sensor.
Fig. 2 is a flowchart illustrating a method for fabricating a backside illuminated image sensor according to an embodiment of the invention.
Fig. 3 is a schematic cross-sectional view of a backside illuminated image sensor according to an embodiment of the invention.
Description of reference numerals:
110-a carrier wafer; 111-a first bonding layer; 120-a device wafer; 121-a substrate layer; 122-an interconnect layer; 123-fiducial marker structure; 124-a second bonding layer; 130-a ground plane; 131-a dielectric layer; 132-a layer of metallic material; 133-ground flag structure; 134-opening; 140-grating spacer layer.
Detailed Description
The present invention provides a back side illuminated image sensor and a method for fabricating the same, which will be described in detail with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is provided for the purpose of facilitating and clearly illustrating embodiments of the present invention.
Referring to fig. 1, as described in the background, in the conventional method for manufacturing a backside illuminated image sensor, after the ground layer 130 is formed, a patterned grating isolation layer 140, for example, is formed on the ground layer 130. Since the ground layer 130 includes the metal material layer 132, a laser or the like cannot penetrate through the metal material layer 132 in a subsequent photolithography process, so that the grating isolation layer 140 formed on the ground layer 130 is usually aligned by using the ground mark structure 133 on the ground layer 130, and the reference mark structure 123 in the device wafer 120 is not used. However, in the process of manufacturing the back side illuminated image sensor, the overlay accuracy of the ground layer 130 is easily changed, which results in poor alignment accuracy between the patterned grating isolation layer 140 using the ground mark structure 133 as an alignment reference and the pattern in the device wafer 120.
In order to solve the above problem, an aspect of the embodiments of the present invention provides a method for manufacturing a back-illuminated image sensor. Fig. 2 is a flowchart illustrating a method for fabricating a backside illuminated image sensor according to an embodiment of the invention.
As shown in fig. 2, the method for manufacturing a backside illuminated image sensor provided in this embodiment includes:
s1: providing a bonded wafer, wherein the bonded wafer comprises a carrier wafer and a device wafer with a pattern formed inside, the device wafer is provided with a front surface and a back surface which are opposite, the front surface of the device wafer is attached to the carrier wafer, and a reference mark structure is formed in the device wafer;
s2: forming a ground layer on the back surface of the device wafer and forming an opening in the ground layer, wherein the opening is located right above the reference mark structure, and in a subsequent photolithography process, the reference mark structure can be identified through the opening.
Fig. 3 is a schematic cross-sectional view of a backside illuminated image sensor according to an embodiment of the invention. A method for manufacturing the back-illuminated image sensor according to the present embodiment will be described below with reference to fig. 2 and 3.
As shown in fig. 2 and 3, the bonded wafer includes a carrier wafer 110 and a device wafer 120 having a pattern formed therein, the device wafer 120 has opposite front and back surfaces, the front surface of the device wafer 120 is attached to the carrier wafer 110, and a fiducial mark structure 123 is formed in the device wafer 120. Specifically, a first bonding layer 111 may be formed on a surface where the carrier wafer 110 and the device wafer 120 are bonded, a second bonding layer 124 may be formed on a front surface of the device wafer 120, and the carrier wafer 110 and the device wafer 120 are bonded by bonding the first bonding layer 111 and the second bonding layer 124. The first bonding layer 111 and the second bonding layer 124 may be made of the same material, for example, both are silicon oxide layers, so as to reduce the bonding difficulty between the carrier wafer and the device wafer and improve the bonding reliability.
With continued reference to fig. 3, a ground layer 130 is formed on the back side of the device wafer 120 and an opening 134 is formed in the ground layer 130, the opening 134 is located right above the fiducial mark structure 123, and in the subsequent photolithography process, the fiducial mark structure 123 can be identified through the opening 134.
In this embodiment, the device wafer 120 may include a substrate layer 121, where the substrate layer 121 has a front surface and a back surface opposite to each other, the front surface of the substrate layer 121 is close to the carrier wafer 110, the fiducial mark structure 123 may be formed on the front surface of the substrate layer 121, an interconnection layer 122 may be further formed on the front surface of the substrate layer 121, and the interconnection layer 122 covers the fiducial mark structure. The substrate layer 121 may have Photodiodes (PDs) arranged in an array, the interconnect layer 122 may include a plurality of sequentially stacked patterned conductive layers, and the pattern inside the device wafer 120 may refer to an arrangement shape of the photodiodes and a pattern of the conductive layers. The fiducial mark structure 123 is formed on the front surface of the substrate layer 121 and located below the interconnection layer 122, so that the fiducial mark structure 123 is close to the ground layer 130, and when the fiducial mark structure 123 is identified through the opening 134, interference from the interconnection layer 122 is avoided, and alignment accuracy can be improved.
The substrate layer 121 may be a silicon substrate, and the silicon substrate may be an epitaxial silicon substrate. In another embodiment, the substrate layer may also be a Germanium substrate, a Silicon Germanium substrate, an SOI (Silicon On Insulator) or GOI (Germanium On Insulator) or the like.
In this embodiment, the ground layer 130 may include a dielectric layer 131 and a metal material layer 132, the dielectric layer 131 may cover the back surface of the device wafer 120, the metal material layer 132 may be formed on the upper surface of the dielectric layer 131, and the metal material layer 132 may have a conductive function and a light absorption function, and may prevent laser light and the like from penetrating and irradiating the device wafer 120 below. The metal material layer 132 may be an aluminum metal layer, or may be other light absorbing materials.
In step S2, the step of forming the opening 134 in the ground layer 130 may include: forming a patterned photoresist layer on the ground layer 130; and etching the ground layer 130 by using the patterned photoresist layer as a mask, for example, using a dry etching process to etch the ground layer 130 and stop on the upper surface of the dielectric layer 131, so as to form the opening 134, where the opening 134 penetrates through the metal material layer 132, so that in a subsequent photolithography process, laser and the like can penetrate through the ground layer 130 through the opening 134 and irradiate on the upper surface of the reference mark structure 123, that is, the reference mark structure 123 can be identified, so as to be used as an alignment reference in a subsequent exposure process. In order to protect the surface of the underlying device wafer 120 from damage, in this embodiment, the bottom surface of the opening only extends to the upper surface of the dielectric layer 131. In other embodiments, however, the bottom surface of the opening may extend into the dielectric layer, even through the dielectric layer.
After step S2 is executed, the method for manufacturing a back-illuminated image sensor may further include: forming a patterned grating isolation layer 140 on the ground layer 130 with the reference mark structure 123 as an alignment reference; and forming a grating on the patterned grating isolation layer 140. The grating may be a metal grating. Since the grating isolation layer directly uses the reference mark structure 123 as an alignment reference for patterning, the alignment accuracy between the obtained patterned grating isolation layer and the pattern in the device wafer 120 is relatively high.
In the manufacturing method of the back-illuminated image sensor of this embodiment, the opening 134 penetrating through the metal material layer 132 is formed in the ground layer 130, and the opening 134 is located right above the fiducial mark structure 123, and in a subsequent photolithography process, the fiducial mark structure 123 in the device wafer 120 can be identified through the opening 134, so that the functional layer such as the patterned grating isolation layer 140 formed on the ground layer 130 in the subsequent step can be aligned with the fiducial mark structure 123 as an alignment reference, so that the functional layer can be directly aligned with the pattern in the device wafer 120, and it is not necessary to align with the pattern in the device wafer 120 in an indirect manner, for example, by using the ground mark structure 133 as an alignment reference, and an influence of a change in overlay accuracy of the ground layer on alignment accuracy of the functional layer and the device wafer is avoided, that is, the alignment accuracy of the subsequently formed functional layer and the pattern in the device wafer 120 can be improved, and the performance of the back-illuminated image sensor is improved.
Another aspect of the present invention provides a backside illuminated image sensor, which can be manufactured by the above method for manufacturing a backside illuminated image sensor.
Specifically, as shown in fig. 3, the back-illuminated image sensor includes: the semiconductor device includes a bonded wafer and a ground layer 130, wherein the bonded wafer includes a carrier wafer 110 and a device wafer 120 having a pattern formed therein, the device wafer 120 has a front surface and a back surface opposite to each other, the front surface of the device wafer 120 is attached to the carrier wafer 110, a fiducial mark structure 123 is formed in the device wafer 120, the ground layer 130 covers the back surface of the device wafer 120, an opening 134 is formed in the ground layer 130, the opening 134 is located right above the fiducial mark structure 123, and in a photolithography process, the fiducial mark structure 123 can be identified through the opening 134.
The fiducial marker structure 123 may comprise a plurality of metal discs, which may be trapezoidal, circular or rectangular in cross-sectional shape. In another embodiment, the fiducial mark structures may be made of other materials than metal, as long as they can be identified in the photolithography process.
The ground layer 130 may include a dielectric layer 131 and a metal material layer 132, the dielectric layer 131 may cover the back surface of the device wafer 120, and the metal material layer 132 may be formed on the upper surface of the dielectric layer 131. The opening 134 may expose a portion of the upper surface of the dielectric layer 131, and the opening 134 penetrates through the metal material layer 132. The ground layer 130 may also have a ground mark structure 133 formed thereon as a spare alignment structure. The dielectric layer may be a silicon oxide layer, and the metal material layer may be an aluminum metal layer. In another embodiment, the dielectric layer may also be a stacked structure formed by stacking different material layers.
The device wafer 120 may include a substrate layer 121, the substrate layer 121 having opposite front and back surfaces, the front surface of the substrate layer 121 may be adjacent to the carrier wafer 110, the fiducial mark structures 123 may be formed on the front surface of the substrate layer 121, an interconnect layer 122 may be further formed on the front surface of the substrate layer 121, and the interconnect layer 122 covers the fiducial mark structures 123.
The device wafer 120 may further include an active region and a peripheral region, the active region may be provided with a photodiode and an interconnection wire connected to the photodiode (the interconnection wire is formed in the interconnection layer 122), and in order to avoid the fiducial mark structure 123 occupying an effective area of the active region and affecting a pattern in the device wafer 120, the fiducial mark structure 123 may be formed in the peripheral region.
In this embodiment, a patterned grating isolation layer 140 may be further formed on the ground layer 130, and the patterned grating isolation layer 140 may further have a grating formed on the grating isolation layer 140 by using the reference mark structure 123 as an alignment reference. The grating isolation layer may be a silicon oxide layer.
The backside illuminated image sensor of the embodiment includes a bonded wafer and a ground layer 130, wherein the bonded wafer includes a carrier wafer 110 and a device wafer 120 having a pattern formed therein, the device wafer 120 has a front surface and a back surface opposite to each other, the front surface of the device wafer 120 is attached to the carrier wafer 110, a fiducial mark structure 123 is formed in the device wafer 120, the ground layer 130 is located on the back surface of the device wafer 120, an opening 134 is formed in the ground layer 130, the opening 134 is located directly above the fiducial mark structure 123, and the fiducial mark structure 123 can be identified through the opening 134 in a photolithography process, so that a functional layer such as a patterned grating isolation layer formed on the ground layer 130 later can be an alignment reference with the fiducial mark structure 123, even if the functional layer formed later can be directly aligned with the pattern in the device wafer 120, the alignment accuracy of the functional layer and the pattern in the device wafer 120 can be improved, and the performance of the backside illuminated image sensor can be improved.
The above description is only for the purpose of describing the preferred embodiments of the present invention and is not intended to limit the scope of the claims of the present invention, and any person skilled in the art can make possible the variations and modifications of the technical solutions of the present invention using the methods and technical contents disclosed above without departing from the spirit and scope of the present invention, and therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention belong to the protection scope of the technical solutions of the present invention.
Claims (10)
1. A method for fabricating a backside illuminated image sensor, comprising:
providing a bonded wafer, wherein the bonded wafer comprises a carrier wafer and a device wafer with a pattern formed inside, the device wafer is provided with a front surface and a back surface which are opposite, the front surface of the device wafer is attached to the carrier wafer, and a reference mark structure is formed in the device wafer;
and forming a ground layer on the back surface of the device wafer and forming an opening in the ground layer, wherein the opening is positioned right above the reference mark structure, and in a subsequent photoetching process, the reference mark structure can be identified through the opening.
2. The method of fabricating a back-illuminated image sensor according to claim 1, wherein the method of fabricating further comprises:
forming a patterned grating isolation layer on the grounding layer by taking the reference mark structure as an alignment reference;
and forming a grating on the patterned grating isolation layer.
3. The method of claim 1, wherein the ground layer comprises a dielectric layer and a metal material layer, the dielectric layer covers a back surface of the device wafer, and the metal material layer is formed on an upper surface of the dielectric layer.
4. The method of fabricating a back-illuminated image sensor as in claim 3, wherein the step of forming the opening in the ground layer comprises:
forming a patterned photoresist layer on the ground layer; and
and etching the grounding layer by taking the patterned photoresist layer as a mask and stopping on the upper surface of the dielectric layer to form the opening, wherein the opening penetrates through the metal material layer.
5. A backside illuminated image sensor, comprising:
the manufacturing method comprises the steps that a bonded wafer comprises a carrier wafer and a device wafer with a pattern formed inside, the device wafer is provided with a front surface and a back surface which are opposite, the front surface of the device wafer is attached to the carrier wafer, and a reference mark structure is formed in the device wafer;
and the ground layer covers the back surface of the device wafer, an opening is formed in the ground layer and is positioned right above the reference mark structure, and the reference mark structure can be identified through the opening in the photoetching process.
6. The back-illuminated image sensor of claim 5, wherein the ground layer comprises a dielectric layer covering the back side of the device wafer and a metallic material layer formed on an upper surface of the dielectric layer.
7. The back-illuminated image sensor of claim 6, wherein the opening exposes a portion of an upper surface of the dielectric layer, and the opening extends through the layer of metallic material.
8. The back-illuminated image sensor of claim 5, wherein the device wafer comprises an active region and a peripheral region, the fiducial mark structure being formed within the peripheral region.
9. The back-illuminated image sensor of claim 5, wherein the device wafer comprises a substrate layer having opposing front and back surfaces, the front surface of the substrate layer being proximate to the carrier wafer, the fiducial mark structures being formed on the front surface of the substrate layer, the front surface of the substrate layer further having an interconnect layer formed thereon, the interconnect layer overlying the fiducial mark structures.
10. The back-illuminated image sensor of claim 5, wherein a patterned grating isolation layer is formed on the ground layer, and the patterned grating isolation layer is aligned with the reference mark structure as a reference, and a grating is formed on the grating isolation layer.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080079490A (en) * | 2007-02-27 | 2008-09-01 | 삼성전자주식회사 | Backside illuminated image sensor and methods of fabricating the same |
| JP2014179446A (en) * | 2013-03-14 | 2014-09-25 | Sharp Corp | Semiconductor imaging device and manufacturing method therefor |
| CN108573881A (en) * | 2017-03-07 | 2018-09-25 | 中芯国际集成电路制造(上海)有限公司 | A kind of semiconductor devices and its manufacturing method and electronic device |
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| US7648851B2 (en) * | 2006-03-06 | 2010-01-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating backside illuminated image sensor |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080079490A (en) * | 2007-02-27 | 2008-09-01 | 삼성전자주식회사 | Backside illuminated image sensor and methods of fabricating the same |
| JP2014179446A (en) * | 2013-03-14 | 2014-09-25 | Sharp Corp | Semiconductor imaging device and manufacturing method therefor |
| CN108573881A (en) * | 2017-03-07 | 2018-09-25 | 中芯国际集成电路制造(上海)有限公司 | A kind of semiconductor devices and its manufacturing method and electronic device |
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