CN111834182B - Processing method of semiconductor electrode material - Google Patents
Processing method of semiconductor electrode material Download PDFInfo
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- CN111834182B CN111834182B CN202010698765.2A CN202010698765A CN111834182B CN 111834182 B CN111834182 B CN 111834182B CN 202010698765 A CN202010698765 A CN 202010698765A CN 111834182 B CN111834182 B CN 111834182B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/04—Manufacture of electrodes or electrode systems of thermionic cathodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/13—Solid thermionic cathodes
- H01J1/14—Solid thermionic cathodes characterised by the material
- H01J1/146—Solid thermionic cathodes characterised by the material with metals or alloys as an emissive material
Abstract
The invention belongs to the technical field of electrode production, and particularly relates to a processing method of a semiconductor electrode material, which comprises the following steps: 1) pouring glue; 2) cutting; 3) grinding the two surfaces; 4) removing the photoresist; 5) end face corrosion; 6) polishing; the invention realizes standardized and batch production, and has short production period and high efficiency.
Description
Technical Field
The invention belongs to the technical field of electrode production, and particularly relates to a processing method of a semiconductor electrode material.
Background
Tungsten has a high melting point, a high temperature strength, a strong thermionic emission capability, and the like, and has been used as a thermionic emission material for a long time. Tungsten-based thermionic emissive materials are a key industrial material commonly used as cathodes for electronic devices and argon arc welding electrodes. The tungsten electrode is widely applied to the fields of inert gas shielded welding, plasma welding, cutting, thermal spraying, electric vacuum and the like.
Currently, research on manufacturing semiconductor devices with tungsten electrodes or molybdenum electrodes is under development, such as patent publication No. CN103681671B "semiconductor devices with tungsten gate electrodes and manufacturing methods thereof", but currently, research on manufacturing methods of tungsten electrodes or molybdenum electrodes is less, and since tungsten electrode products are limited by national standards "tungsten electrodes for arc welding, plasma welding and cutting", related standards of tungsten electrode products mainly include international standards ISO 6848-2004 (E) "standards for arc welding, cutting, non-consumable tungsten electrodes.
On the other hand, molybdenum has good thermal conductivity and electrical conductivity and low thermal expansion coefficient, and can be made into plates, rods, balls and other shapes generally, but the molybdenum electrode has small single size and short length, and can not be produced in batch to produce large single-weight large-size molybdenum electrodes, which easily causes the quality problem of molybdenum wires, so that the method for manufacturing the molybdenum electrodes in batch with high yield is particularly important.
At present, a molybdenum electrode processing method is that a wood rod raw material is cut into required particles by using an epoxy resin grinding wheel with the diameter of 140 mm multiplied by 0.4 mm of a self-made grinding wheel cutting machine, grinding quantity is reserved, the cut molybdenum electrode is manually assembled in a circular ring, the assembled molybdenum electrode is placed on a heating plate and heated to 140 ℃, a plurality of molybdenum electrode pieces are bonded by mixed glue, and then grinding is carried out.
Disclosure of Invention
The invention provides a method for manufacturing an electrode plate by using a semiconductor electrode material, aiming at the defects of the prior art.
The method is realized by the following technical scheme:
a processing method of a semiconductor electrode material comprises the following steps:
1) pouring glue; 2) cutting; 3) grinding the sheet on the double sides; 4) removing the photoresist; 5) end face corrosion; 6) and (6) polishing.
The semiconductor electrode material is any one of a tungsten electrode material, a molybdenum electrode material and a tungsten-molybdenum alloy.
The glue filling is that the mixed glue is heated and mixed evenly to prepare the mixed glue in a molten state, then the mixed glue in the molten state is filled into an iron pipe provided with the semiconductor electrode rods, and the mixed glue is pressurized and exhausted to fill gaps among the semiconductor electrode rods.
The mixed viscose glue is prepared from rosin and shellac according to the following weight ratio (4.5-5): (3.5-4), heating to 150-160 ℃, and stirring to prepare the mixed glue.
And (3) pouring the glue, wherein the temperature is 140 ℃.
The cutting process comprises the following steps: the cutting steel wire is a copper-plated steel wire with the thickness of 0.16 mm, the cutting sand is No. 1000 silicon carbide micro powder, and the cutting oil is DX-suspension cutting oil; the cutting mortar is prepared from cutting oil and cutting sand according to the following weight ratio (1-1.5): (0.8-1), and the cutting linear velocity is as follows: 0.1-0.5 mm/min.
And the photoresist removing step is to put the semiconductor electrode plate into water for heating, and then the steps are as follows: adding the degumming material according to the mass ratio of 10:1, boiling, keeping the temperature, and washing with tap water until the surface is free of impurities.
The photoresist removing material is sodium hydroxide.
And the end face corrosion is to finish the end face corrosion by adopting nitric acid to corrode the electrode for 1-2min, repeating the operation, and after the electrode is cleaned by clear water, and performing sampling inspection on the electrode by a micrometer until the height dimension is smaller than 0.01-0.015 mm before corrosion.
The polishing process comprises the following steps: and (3) rolling and polishing the polishing solution for 2-3h, wherein the polishing solution is prepared from cleaning powder and water according to the proportion of (1-3): 100 by mass ratio. The processing method provided by the invention can be suitable for manufacturing semiconductor insulating substrate materials and sapphire.
The semiconductor insulating substrate material is a non-metal superhard brittle material.
The semiconductor insulating substrate material is any one of ceramic, beryllium oxide and silicon.
The method comprises the steps of firstly, glue filling is carried out, so that the mixed glue fills gaps among molybdenum (tungsten) rods in the iron pipe, and the integrity after cutting is convenient to guarantee; secondly, by combining the process of double-sided lapping, the wire mark left in the cutting procedure can be removed, which is beneficial to ensuring that the size precision and the end surface roughness of the part meet the design requirements; the photoresist can be removed to remove impurities on the surface of the electrode, so that the surface cleanliness is ensured; the end face corrosion can remove residues, oxide layers and oil stains on the surface layers of the electrodes, the end faces are enabled to form surface roughness required by a brazing process, the brazing yield is improved, and due to corrosion treatment, impurities on the surface layers of the electrodes are more, so that the polishing technology is recycled, the oxide layers can be thoroughly removed by means of rolling polishing, and the brazing quality of the electrodes and copper sheets is improved.
Has the beneficial effects that:
the invention realizes standardized and batch production, and has short production period and high efficiency.
The electrode slice prepared by the method has high dimensional precision and small form and position tolerance, the height dimension of a part can be controlled within +/-0.02 mm, the parallelism of the end surfaces can be controlled to be less than or equal to 0.01 mm, and the surface roughness Ra of the two ends of the electrode is less than or equal to 1.6 mu m.
The electrode plate prepared by the method has high welding (brazing) strength; the brazing tension of each type of electrode lead is improved by over 25N, the formed molybdenum (tungsten) copper alloy layer is thickened by 0.05-0.08 mm, the copper-clad area is larger than 96%, the tensile resistance and the acid corrosion resistance are strongest, the firing yield is not less than 98%, the yield is improved, the loss is reduced, and the cost is saved.
The end face parallelism is less than or equal to 0.01 mm, the surface roughness Ra is less than or equal to 1.6 mu m, and the brazing tension is different according to the different specifications of the molybdenum electrode and is generally not more than 25N-98N.
Drawings
FIG. 1: cross section comparison diagrams of the iron pipe before and after glue pouring; wherein, the left figure is a cross-sectional profile of the iron pipe before glue pouring, and the right figure is a cross-sectional profile of the iron pipe after glue pouring;
FIG. 2: a cutting surface diagram of the semiconductor electrode slice;
FIG. 3: comparing the front and back cutting surfaces of the double-sided abrasive disc; wherein, the left drawing is a double-sided grinding front cutting surface drawing, and the right drawing is a double-sided grinding rear cutting surface drawing;
FIG. 4: comparing the color of the surfaces of the front and the rear electrodes before removing the photoresist; wherein, the left image is a surface color condition image before photoresist stripping, and the right image is a surface color image after photoresist stripping;
FIG. 5: comparing the surface of the electrode before and after polishing; wherein, the left figure is a surface figure before polishing, and the right figure is a surface figure after polishing.
Detailed Description
The following is a detailed description of the embodiments of the present invention, but the present invention is not limited to these embodiments, and any modifications or substitutions in the basic spirit of the embodiments are included in the scope of the present invention as claimed in the claims.
Example 1
A processing method of a molybdenum electrode material comprises the following steps:
1) glue pouring: heating and uniformly mixing the mixed viscose to prepare molten mixed viscose, then pouring the molten mixed viscose into an iron pipe provided with molybdenum electrode rods in a drying oven at 140 ℃, manually extruding by using a screw rod, taking out a glue pouring device from the drying oven, gradually cooling and pressing the glue, and then beating air until the mixed viscose is cooled to fill gaps among the molybdenum electrode rods;
2) cutting: a plurality of material pipes obtained in the step 1) are orderly arranged and bonded on a cutting material plate, and are clamped on a worktable of a multi-wire cutting machine to be cut into pieces at one time after the material pipes are firmly bonded;
3) grinding the two surfaces;
4) removing the photoresist: putting the molybdenum electrode slice into water for heating, and then according to the weight ratio of water: adding a degumming material sodium hydroxide into the degumming material according to the mass ratio of 10:1, boiling, keeping the temperature, and washing with tap water until the surface is free of impurities;
5) end face corrosion: corroding the electrode for 1min by using nitric acid, repeating the operation, and after cleaning by using clear water, performing sampling inspection on the electrode by using a micrometer, wherein the height dimension is less than 0.01 mm before corrosion, and thus the end face corrosion is completed;
6) polishing: placing the electrode slice in a hexagonal roller, adding polishing solution, and performing rolling polishing for 2 hours;
the mixed viscose is prepared from rosin and shellac according to a weight ratio of 4.5: 3.5, heating to the temperature of 150-160 ℃, and stirring to prepare a mixed glue;
the cutting process comprises the following steps: the cutting steel wire is a copper-plated steel wire with the thickness of 0.16 mm, the cutting sand is No. 1000 silicon carbide micro powder, and the cutting oil is DX-suspension cutting oil; the cutting mortar is prepared from cutting oil and cutting sand according to the proportion of 1: 0.8, and the cutting linear velocity is as follows: 0.1 mm/min;
the photoresist removing material is sodium hydroxide;
the polishing solution is prepared from cleaning powder and water according to the weight ratio of 1: 100 by mass ratio.
Example 2
A processing method of a molybdenum electrode material comprises the following steps:
1) glue pouring: heating and uniformly mixing the mixed viscose to prepare molten mixed viscose, then pouring the molten mixed viscose into an iron pipe provided with molybdenum electrode rods in a drying oven at 140 ℃, manually extruding by using a screw rod, taking out a glue pouring device from the drying oven, gradually cooling and pressing the glue, and then beating air until the mixed viscose is cooled to fill gaps among the molybdenum electrode rods;
2) cutting: a plurality of material pipes obtained in the step 1) are orderly arranged and bonded on a cutting material plate, and are clamped on a worktable of a multi-wire cutting machine to be cut into pieces at one time after the material pipes are firmly bonded;
3) grinding the sheet on the double sides;
4) removing the photoresist: putting the molybdenum electrode slice into water for heating, and then according to the weight ratio of water: adding a degumming material sodium hydroxide into the degumming material according to the mass ratio of 10:1, boiling, keeping the temperature, and washing with tap water until the surface is free of impurities;
5) end face corrosion: corroding the electrode for 2min by using nitric acid, repeating the operation, and after cleaning by using clear water, performing sampling inspection on the electrode by using a micrometer, wherein the height dimension is less than 0.015 mm before corrosion, and thus the end face corrosion is completed;
6) polishing: placing the electrode slice in a hexagonal diamond roller, adding polishing solution, and performing tumbling for 3 hours;
the mixed viscose is prepared from rosin and shellac in a proportion of 5: 4, heating to 150-160 ℃, and stirring to prepare mixed glue;
the cutting process comprises the following steps: the cutting steel wire is a copper-plated steel wire with the thickness of 0.16 mm, the cutting sand is No. 1000 silicon carbide micro powder, and the cutting oil is DX-suspension cutting oil; cutting mortar is prepared by cutting oil and cutting sand according to the proportion of 1.5: 1, the cutting linear velocity is as follows: 0.5 mm/min;
the photoresist removing material is sodium hydroxide;
the polishing solution is prepared from cleaning powder and water according to the weight ratio of 3: 100 by mass ratio.
Example 3
A processing method of a molybdenum electrode material comprises the following steps:
1) glue pouring: heating and uniformly mixing the mixed viscose to prepare molten mixed viscose, then pouring the molten mixed viscose into an iron pipe provided with molybdenum electrode rods in a drying oven at 140 ℃, manually extruding by using a screw, taking out a glue pouring device from the drying oven, gradually cooling and pressing the glue, and then exhausting air until the mixed viscose is cooled so that the mixed viscose is filled in gaps among the molybdenum electrode rods;
2) cutting: a plurality of material pipes obtained in the step 1) are orderly arranged and bonded on a cutting material plate, and are clamped on a worktable of a multi-wire cutting machine to be cut into pieces at one time after the material pipes are firmly bonded;
3) grinding the sheet on the double sides;
4) removing the photoresist: putting the molybdenum electrode plate into water for heating, and then adding the molybdenum electrode plate into the water: adding a degumming material sodium hydroxide into the degumming material according to the mass ratio of 10:1, boiling, keeping the temperature, and washing with tap water until the surface is free of impurities;
5) end face corrosion: corroding the electrode for 90s by using nitric acid, repeating the operation, and after the electrode is cleaned by using clear water, performing sampling inspection on the electrode by using a micrometer, wherein the height dimension is less than 0.012 mm before corrosion, and thus the end face corrosion is completed;
6) polishing: placing the electrode slice in a hexagonal roller, adding polishing liquid, and performing rolling polishing for 2-3 hours;
the mixed viscose is prepared from rosin and shellac according to a weight ratio of 4.8: 3.7, heating to 160 ℃ and stirring to prepare mixed glue;
the cutting process comprises the following steps: the cutting steel wire is a copper-plated steel wire with the thickness of 0.16 mm, the cutting sand is No. 1000 silicon carbide micro powder, and the cutting oil is DX-suspension cutting oil; the cutting mortar is prepared from cutting oil and cutting sand according to the proportion of 1.2: 0.9, and the cutting linear velocity is as follows: 0.3 mm/min;
the photoresist removing material is sodium hydroxide;
the polishing solution is prepared from cleaning powder and water according to the weight ratio of 2: 100 by mass ratio.
Example 4
A processing method of a tungsten electrode material comprises the following steps:
1) glue pouring: heating and uniformly mixing the mixed viscose to prepare molten mixed viscose, then pouring the molten mixed viscose into an iron pipe provided with tungsten electrode rods in a drying oven at 140 ℃, manually extruding by using a screw rod, taking out a glue pouring device from the drying oven, gradually cooling and pressing the glue, and then beating air until the mixed viscose is cooled so that the mixed viscose is filled in gaps among the tungsten electrode rods;
2) cutting: a plurality of material pipes obtained in the step 1) are orderly arranged and bonded on a cutting plate, and are clamped on a worktable of a multi-wire cutting machine to be cut into pieces at one time after being firmly bonded;
3) grinding the sheet on the double sides;
4) removing the photoresist: putting the tungsten electrode slice into water for heating, and then according to the weight ratio of water: adding a degumming material sodium hydroxide into the degumming material according to the mass ratio of 10:1, boiling, keeping the temperature, and washing with tap water until the surface is free of impurities;
5) end face corrosion: corroding the electrode for 90s by using nitric acid, repeating the operation, and after cleaning by using clear water, performing sampling inspection on the electrode by using a micrometer, wherein the height dimension is less than 0.015 mm before corrosion, and thus finishing end face corrosion;
6) polishing: placing the electrode slice in a hexagonal roller, adding polishing liquid, and performing rolling polishing for 2-3 hours;
the mixed viscose is prepared from rosin and shellac according to a weight ratio of 4.7: 3.8, heating to the temperature of 150-160 ℃, and stirring to prepare a mixed glue;
the cutting process comprises the following steps: the cutting steel wire is a copper-plated steel wire with the thickness of 0.16 mm, the cutting sand is No. 1000 silicon carbide micro powder, and the cutting oil is DX-suspension cutting oil; the cutting mortar is prepared from cutting oil and cutting sand according to the proportion of 1: 1, the cutting linear velocity is as follows: 0.2 mm/min;
the photoresist removing material is sodium hydroxide;
the polishing solution is prepared from cleaning powder and water according to the weight ratio of 2: 100 by mass ratio.
Claims (1)
1. A processing method of a semiconductor electrode material is characterized by comprising the following steps:
1) glue pouring: heating and uniformly mixing the mixed viscose to prepare molten mixed viscose, then filling the molten mixed viscose into an iron pipe provided with semiconductor electrode rods, and pressurizing and exhausting to enable the mixed viscose to fill gaps among the semiconductor electrode rods;
2) cutting;
3) grinding the sheet on the double sides;
4) removing the photoresist: putting the semiconductor electrode plate into water for heating, then adding a degumming material, boiling, preserving heat, and then washing with tap water until the surface is free of impurities;
5) end face corrosion: corroding the electrode by using nitric acid for 1-2min, repeating the operation, and after cleaning by using clear water, performing sampling inspection on the electrode by using a micrometer, wherein the height dimension is less than 0.01-0.015 mm before corrosion, so that end face corrosion is completed;
6) polishing;
the semiconductor electrode material is any one of a tungsten electrode material, a molybdenum electrode material and a tungsten-molybdenum alloy;
the mixed viscose glue is prepared from rosin and shellac according to the following weight ratio (4.5-5): (3.5-4), heating to the temperature of 150-160 ℃, and stirring to prepare a mixed glue;
the temperature of the glue pouring is 140 ℃;
the cutting process comprises the following steps: the cutting steel wire is a copper-plated steel wire with the thickness of 0.16 mm, the cutting sand is No. 1000 silicon carbide micro powder, and the cutting oil is DX-suspension cutting oil; the cutting mortar is prepared from cutting oil and cutting sand according to the weight ratio of (1-1.5): (0.8-1), and the cutting linear velocity is as follows: 0.1-0.5 mm/min;
the polishing process comprises the following process conditions: and (3) rolling and polishing the polishing solution for 2-3h, wherein the polishing solution is prepared from cleaning powder and water according to the proportion of (1-3): 100 by mass ratio.
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| CN104393115A (en) * | 2014-11-18 | 2015-03-04 | 上海空间电源研究所 | One-time corrosion process for multi-junction gallium arsenide solar batteries |
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| CN110148554A (en) * | 2019-05-31 | 2019-08-20 | 大连理工大学 | A method of corroding sliced crystal silicon using photoetching and metal catalytic |
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| JP2001110304A (en) * | 1999-10-05 | 2001-04-20 | Fujitsu Ltd | Method for forming barrier rib of display panel and structure of the barrier rib |
| KR100815038B1 (en) * | 2000-12-12 | 2008-03-18 | 코니카 미놀타 홀딩스 가부시키가이샤 | Method for Forming Thin Film, Article Having Thin Film, Optical Film, Dielectric Coated Electrode, and Plasma Discharge Processor |
| JP4950536B2 (en) * | 2006-03-31 | 2012-06-13 | 株式会社東芝 | Field emission cold cathode device and manufacturing method thereof |
| JP5464464B2 (en) * | 2007-10-24 | 2014-04-09 | 国立大学法人 名古屋工業大学 | Corrosion-resistant ceramic electrode material and manufacturing method thereof |
| CN101880025B (en) * | 2010-06-26 | 2012-09-19 | 上海交通大学 | Method for implanting one-dimensional nano material into surface of metal electrode |
| CN107301949A (en) * | 2017-07-17 | 2017-10-27 | 中国振华集团永光电子有限公司（国营第八七三厂） | A kind of use tungsten electrode manufactures the manufacture method of highly reliable transient voltage suppressor diode |
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| CN104393115A (en) * | 2014-11-18 | 2015-03-04 | 上海空间电源研究所 | One-time corrosion process for multi-junction gallium arsenide solar batteries |
| CN109972087A (en) * | 2019-04-15 | 2019-07-05 | 华东师范大学 | A kind of preparation method of microelectrode deposition mask |
| CN110148554A (en) * | 2019-05-31 | 2019-08-20 | 大连理工大学 | A method of corroding sliced crystal silicon using photoetching and metal catalytic |
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