CN111818675A - Far infrared electrothermal film and preparation method thereof - Google Patents
Far infrared electrothermal film and preparation method thereof Download PDFInfo
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- CN111818675A CN111818675A CN202010726365.8A CN202010726365A CN111818675A CN 111818675 A CN111818675 A CN 111818675A CN 202010726365 A CN202010726365 A CN 202010726365A CN 111818675 A CN111818675 A CN 111818675A
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- electrothermal film
- infrared electrothermal
- far infrared
- carbon
- oxide
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000000203 mixture Substances 0.000 claims abstract description 28
- 239000000126 substance Substances 0.000 claims abstract description 22
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 21
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 11
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 11
- 229920005989 resin Polymers 0.000 claims abstract description 11
- 239000011347 resin Substances 0.000 claims abstract description 11
- 238000005245 sintering Methods 0.000 claims abstract description 4
- 239000011521 glass Substances 0.000 claims description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 9
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 8
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 6
- 229910001887 tin oxide Inorganic materials 0.000 claims description 6
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 5
- 229910021389 graphene Inorganic materials 0.000 claims description 5
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 5
- 239000005011 phenolic resin Substances 0.000 claims description 5
- 229920001568 phenolic resin Polymers 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 229910000410 antimony oxide Inorganic materials 0.000 claims description 4
- 239000002041 carbon nanotube Substances 0.000 claims description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 4
- 229910000428 cobalt oxide Inorganic materials 0.000 claims description 4
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 3
- 239000005751 Copper oxide Substances 0.000 claims description 3
- 229920000877 Melamine resin Polymers 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229920001807 Urea-formaldehyde Polymers 0.000 claims description 3
- 229910000431 copper oxide Inorganic materials 0.000 claims description 3
- 239000007849 furan resin Substances 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 238000007639 printing Methods 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000005485 electric heating Methods 0.000 description 11
- 239000002245 particle Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- GZCGUPFRVQAUEE-SLPGGIOYSA-N aldehydo-D-glucose Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C=O GZCGUPFRVQAUEE-SLPGGIOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B30/00—Energy efficient heating, ventilation or air conditioning [HVAC]
Landscapes
- Resistance Heating (AREA)
Abstract
The invention provides a far infrared electrothermal film and a preparation method thereof, wherein the far infrared electrothermal film comprises the following components in percentage by mass: 20% -40%: 15% -25%: 0-15% of carbon-containing resin, metal oxide, simple substance of carbon and simple substance of metal are mixed to prepare a colloidal mixture; uniformly coating the colloidal mixture on an insulating substrate, and then putting the insulating substrate coated with the colloidal mixture into an oven for heating and curing; and finally, putting the cured insulating substrate coated with the colloidal mixture into a high-temperature furnace for heating, and sintering to obtain the far infrared electrothermal film. The far infrared electrothermal film prepared by the invention has high power density and low volume resistivity, and can work under low voltage.
Description
Technical Field
The invention relates to the field of far infrared electric heating, in particular to a far infrared electric heating film and a preparation method thereof.
Background
The film electric heating product has high infrared radiation rate and good energy-saving effect because of no open fire, and is more and more widely applied in the market. With the solution of the problems of technology, material cost, technology and the like, the application range of the film electrothermal product is wider and wider, and the film electrothermal product has wide application range from decoration, electronics, medical treatment, aerospace, agriculture and the like. At present, in infrared film electric heating products on the market, conductive substance powder such as graphite, graphene, carbon nano tubes, metal simple substances, metal oxides and the like is generally adopted, compounded with a binder and a solvent and then printed to prepare an electric heating film; or the infrared electrothermal film is prepared by forming a composite tin oxide film by means of thermal spraying, vapor deposition and the like. The far infrared electrothermal film prepared by the method has high resistivity, small power density and is not beneficial to low-voltage operation due to the factors such as dielectric property of the material.
Disclosure of Invention
The invention aims to provide a far infrared electrothermal film and a preparation method thereof, and solves the problems of high resistivity and low power density of the existing electrothermal film.
In order to achieve the purpose, the invention provides an infrared electrothermal film, which comprises carbon-containing resin, metal oxide, a simple substance of carbon and a simple substance of metal, wherein the mass ratio of the carbon-containing resin to the metal oxide to the simple substance of carbon to the simple substance of metal is 20-65%: 20% -40%: 15% -25%: 0 to 15 percent.
Specifically, the carbon-containing resin is one or more of phenolic resin, furan resin, urea resin and melamine-formaldehyde resin.
Specifically, the metal oxide is one or more of nickel oxide, cobalt oxide, iron oxide, copper oxide, manganese oxide, tin oxide and antimony oxide.
Specifically, the carbon simple substance is one or more of conductive graphite, graphene and a carbon nanotube.
Specifically, the metal simple substance is one or more of copper, silver, chromium and nickel.
The invention also provides a preparation method of the far infrared electrothermal film, which comprises the following steps:
step 1, mixing the following components in percentage by mass in a range of 20% -65%: 20% -40%: 15% -25%: 0-15% of carbon-containing resin, metal oxide, simple substance carbon and simple substance metal are ground by a three-roller machine to obtain a colloidal mixture;
step 2, printing the colloidal mixture obtained in the step 1 on an insulating substrate through a roll printer to obtain the insulating substrate coated with the colloidal mixture, wherein the insulating substrate is one of a microcrystalline glass plate, an alumina ceramic plate and a quartz glass plate;
step 3, putting the insulating matrix coated with the colloidal mixture obtained in the step 2 into an oven, heating to 70-90 ℃, preserving heat for 10-60 minutes, continuing heating to 120-200 ℃, preserving heat for 10-60 minutes, and curing to obtain a cured insulating matrix;
and 4, transferring the cured insulating base body obtained in the step 3 to a high-temperature furnace for sintering, keeping the temperature at 550-1200 ℃ for 30-300 minutes under the protection of inert gas nitrogen or argon, and naturally cooling to form the far infrared electrothermal film on the insulating base body.
The invention has the beneficial effects that the carbon-containing resin, the metal oxide, the simple substance of carbon and the simple substance of metal are ground to prepare a colloidal mixture, the colloidal mixture is roll-printed on an insulating substrate, and then the colloidal mixture is cured and sintered to form a film, and finally the far infrared electrothermal film is formed on the insulating substrate. The preparation method is simple, and the far infrared electrothermal film prepared by the method has high power density and low volume resistivity, and can work under low voltage.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to embodiments and examples, but those skilled in the art will understand that the following embodiments and examples are only illustrative of the present invention and should not be construed as limiting the scope of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. Those who do not specify the conditions are performed according to the conventional conditions or the conditions recommended by the manufacturer.
The reagents or instruments used in the present invention are not indicated by manufacturers, and are all conventional products commercially available.
Example one
A far infrared electrothermal film and a preparation method thereof are disclosed:
step 1: 50 g of phenolic resin, 15 g of furan resin, 3 g of nickel oxide, 3 g of cobalt oxide, 4 g of iron oxide, 2 g of copper oxide, 4 g of tin oxide, 4 g of antimony oxide, 13 g of conductive graphite powder and 2 g of graphene are selected, mixed and stirred uniformly, and ground and dispersed to a colloidal mixture with the particle size of 0.5-5 microns by a three-roll mill.
Step 2: a microcrystalline glass plate with the thickness of 4mm and the thickness of 150x300mm is selected, and the colloidal mixture is printed on one surface of the microcrystalline glass plate by a roller printer to form a film layer with the thickness of 20um and the thickness of 140x280mm, so that the microcrystalline glass plate coated with the colloidal mixture is obtained.
And step 3: and (3) putting the microcrystalline glass plate coated with the colloidal mixture prepared in the step (2) into an oven, heating to 70 ℃, keeping the temperature for 60 minutes, continuing heating to 120 ℃, and keeping the temperature for 60 minutes to obtain the cured microcrystalline glass plate.
And 4, step 4: and (3) putting the cured microcrystalline glass plate prepared in the step (3) into a muffle furnace, introducing nitrogen, heating to 1000 ℃, preserving the heat for 150 hours, and naturally cooling to form a far infrared electrothermal film on the microcrystalline glass plate to obtain the far infrared electrothermal film microcrystalline glass plate.
The prepared far infrared electric heating film microcrystalline glass plate is silvered at the two 280mm ends, and the far infrared electric heating film microcrystalline glass plate can work after being provided with electrodes, connecting wires and a power supply.
The far infrared electrothermal film prepared by the method has the resistance of 2.8 ohms within the area of 140X280mm and the safety voltage of 48V, and can output 822W.
Example two
A far infrared electrothermal film and a preparation method thereof are disclosed:
step 1: selecting 35 g of phenolic resin, 10 g of urea-formaldehyde resin, 3 g of nickel oxide, 3 g of manganese oxide, 4 g of iron oxide, 15 g of tin oxide, 5 g of antimony oxide, 18 g of conductive graphite powder, 2 g of carbon nano-tubes, 4 g of silver powder and 1 g of copper powder, mixing and stirring uniformly, and grinding and dispersing by a three-roller machine to obtain a colloidal mixture with the particle size of 2-5 microns.
Step 2: an alumina ceramic plate of 150x300mm and 4mm in thickness was selected, and the gel-like mixture was printed on one side of the alumina ceramic plate using a roll printer to form a 140x280mm film layer of 12um thickness, resulting in an alumina ceramic plate coated with the gel-like mixture.
And step 3: and (3) putting the alumina ceramic plate coated with the colloidal mixture prepared in the step (2) into an oven, heating to 80 ℃, keeping the temperature for 30 minutes, continuing heating to 180 ℃, and keeping the temperature for 30 minutes to obtain the cured alumina ceramic plate.
And 4, step 4: and (3) putting the cured alumina ceramic plate prepared in the step (3) into a muffle furnace, introducing nitrogen, heating to 550 ℃ and preserving the heat for 300 minutes, and naturally cooling to form a far infrared electrothermal film on the alumina ceramic plate to obtain the far infrared electrothermal film alumina ceramic plate.
The prepared far infrared electric heating film alumina ceramic plate is silver-plated at two 280mm ends, electrodes are arranged, wires are connected, and the far infrared electric heating film alumina ceramic plate can work after being connected with a power supply.
The far infrared electrothermal film prepared by the method has the resistance of 1.5 ohm within the area of 140X280mm and the safe voltage of 24V, and can output 384W.
EXAMPLE III
A far infrared electrothermal film and a preparation method thereof are disclosed:
step 1: selecting 20 g of phenolic resin, 5 g of melamine-formaldehyde resin, 3 g of nickel oxide, 3 g of cobalt oxide, 4 g of ferric oxide, 15 g of manganese oxide, 15 g of tin oxide, 20 g of conductive graphite powder, 5 g of graphene, 10 g of metal chromium powder and 5 g of metal nickel powder, mixing and stirring uniformly, and grinding and dispersing to form a colloidal mixture with the particle size of 0.5-5 microns by using a three-roller machine.
Step 2: a150 x300mm quartz glass plate with a thickness of 4mm was selected, and the colloidal mixture was printed on one side of the quartz glass plate by a roll printer to form a 140x280mm film layer with a thickness of 18 μm, resulting in a quartz glass plate coated with the colloidal mixture.
And step 3: and (3) putting the quartz glass plate coated with the colloidal mixture prepared in the step (2) into an oven, heating to 90 ℃, keeping the temperature for 10 minutes, continuing heating to 200 ℃, and keeping the temperature for 10 minutes to obtain the cured quartz glass plate.
And 4, step 4: and (3) putting the cured quartz glass plate prepared in the step (3) into a muffle furnace, introducing nitrogen, heating to 1200 ℃, preserving the temperature for 100 minutes, and naturally cooling to form a far infrared electrothermal film on the quartz glass plate to obtain the far infrared electrothermal film quartz glass plate.
The prepared far infrared electric heating film quartz glass plate is silvered at the two ends of 280mm, and the electric heating far infrared microcrystalline glass plate can work after being provided with electrodes and connecting wires and connected with a power supply.
The far infrared electrothermal film prepared by the method has the resistance of 2 ohms within the area of 140X280mm and the safety voltage of 48V, and can output 1152W.
The preparation method is simple, and the far infrared electrothermal film prepared by the method has high power density and low volume resistivity, and can work under low voltage.
Those skilled in the art to which the present invention pertains can also make appropriate alterations and modifications to the above-described embodiments, in light of the above disclosure. Therefore, the present invention is not limited to the specific embodiments disclosed and described above, and some modifications and variations of the present invention should fall within the scope of the claims of the present invention. Furthermore, although specific terms are employed herein, they are used in a generic and descriptive sense only and not for purposes of limitation.
Claims (10)
1. An infrared electrothermal film is characterized in that: the carbon-containing resin comprises carbon-containing resin, metal oxide, simple substance carbon and simple substance metal, wherein the mass ratio of the carbon-containing resin to the metal oxide to the simple substance carbon to the simple substance metal is 20-65%: 20% -40%: 15% -25%: 0 to 15 percent.
2. The infrared electrothermal film of claim 1, wherein: the carbon-containing resin is one or more of phenolic resin, furan resin, urea resin and melamine-formaldehyde resin.
3. The preparation method of the infrared electrothermal film according to claim 1, characterized in that: the metal oxide is one or more of nickel oxide, cobalt oxide, iron oxide, copper oxide, manganese oxide, tin oxide and antimony oxide.
4. The infrared electrothermal film of claim 1, wherein: the carbon simple substance is one or more of conductive graphite, graphene and a carbon nano-tube.
5. The infrared electrothermal film of claim 1, wherein: the metal simple substance is one or more of copper, silver, chromium and nickel.
6. A method for preparing a far infrared electrothermal film according to claim 1, characterized in that: the method comprises the following steps:
step 1, mixing the following components in percentage by mass of 20% -65%: 20% -40%: 15% -25%: 0-15% of carbon-containing resin, metal oxide, simple substance carbon and simple substance metal are ground by a three-roller machine to obtain a colloidal mixture;
step 2, printing the colloidal mixture obtained in the step 1 on an insulating substrate through a roll printer to obtain the insulating substrate coated with the colloidal mixture;
step 3, putting the insulating substrate coated with the colloidal mixture obtained in the step 2 into an oven for heating and curing to obtain a cured insulating substrate;
and 4, putting the cured insulating base body obtained in the step 3 into a high-temperature furnace for heating, and sintering to form the far infrared electrothermal film on the insulating base body.
7. The method for preparing a far infrared electrothermal film according to claim 6, wherein: in the step 2, the insulating substrate is one of a microcrystalline glass plate, an alumina ceramic plate and a quartz glass plate.
8. The method for preparing a far infrared electrothermal film according to claim 6, wherein: in the step 3, the curing is as follows: putting the insulating substrate coated with the colloidal mixture into an oven, heating to 70-90 ℃, preserving heat for 10-60 minutes, continuously heating to 120-200 ℃, and preserving heat for 10-60 minutes.
9. The method for preparing a far infrared electrothermal film according to claim 6, wherein: in the step 4, the sintering is as follows: transferring the cured insulating matrix to a high-temperature furnace, raising the temperature to 550-1200 ℃ under the protection of inert gas, preserving the temperature for 30-300 minutes, and naturally cooling.
10. The method for preparing a far infrared electrothermal film according to claim 9, wherein: the inert gas is nitrogen or argon.
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CN202010726365.8A CN111818675B (en) | 2020-07-25 | 2020-07-25 | Far infrared electrothermal film and preparation method thereof |
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CN202010726365.8A CN111818675B (en) | 2020-07-25 | 2020-07-25 | Far infrared electrothermal film and preparation method thereof |
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CN111818675B CN111818675B (en) | 2023-05-12 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113038642A (en) * | 2021-02-26 | 2021-06-25 | 郑州新世纪材料基因组工程研究院有限公司 | Electric infrared heating film, preparation method thereof and electric infrared heating device |
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CN101873729A (en) * | 2010-06-07 | 2010-10-27 | 刘忠耀 | Electric heating film and preparation method thereof |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113038642A (en) * | 2021-02-26 | 2021-06-25 | 郑州新世纪材料基因组工程研究院有限公司 | Electric infrared heating film, preparation method thereof and electric infrared heating device |
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