CN111813704A - Counting method, device and equipment based on nor flash and readable storage medium - Google Patents
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7202—Allocation control and policies
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
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Abstract
The invention discloses a counting method, a device, equipment and a readable storage medium based on nor flash, wherein the method comprises the following steps: acquiring the bit number M of operable basic storage units in the nor flash and the number N of the basic storage units contained in each sector; the nor flash comprises a first sector and a second sector, wherein the first sector is a bit number counting area and is used for counting by using the number of bits; the second sector is used for counting as a digit counting area; when the external parameter to be added is detected, rewriting a predetermined number of bits of a basic storage unit in the first sector from a first value to a second value in order of addresses; and obtaining the currently stored external parameter value of the nor flash according to the number of the second numerical values in the second sector, the number M of the basic storage units, the number N of the basic storage units and the number of the second numerical values in the first sector. The invention can realize the updating and the storage of the data under the condition of not frequently erasing the nor flash.
Description
Technical Field
The invention relates to the technical field of computers, in particular to a counting method, a counting device, counting equipment and a readable storage medium based on nor flash.
Background
A nor flash is widely used in electronic products as a nonvolatile memory that can erase and write memory cell blocks called blocks and sectors. The write operation of the nor flash device can only change 1 to 0, so that erasing must be performed before the write operation is performed, and then data to be updated must be written.
In some devices, some devices need to count frequently, for example, in application of a printer, the printer sometimes needs to store data such as paper feeding mileage and cutter times of the printer according to actual printing operation, and the data is generally stored in the nor flash, so that the data in the nor flash may need to be updated frequently every time printing is performed, that is, blocks or sectors of the nor flash need to be erased frequently, and the service life of the nor flash is shortened.
Disclosure of Invention
In view of the above, the present invention provides a method, an apparatus, a device and a readable storage medium for counting based on a nor flash, which can update and store data without frequently erasing the nor flash.
The embodiment of the invention provides a counting method based on nor flash, which comprises the following steps:
acquiring the bit number M of operable basic storage units in the nor flash and the number N of the basic storage units contained in each sector; the nor flash comprises a first sector and a second sector, wherein the first sector is a bit number counting area and is used for counting by using the number of bits; the second sector is used for counting as a digit counting area;
when the external parameter to be added is detected, rewriting a predetermined number of bits of a basic storage unit in the first sector from a first value to a second value in order of addresses; and
and obtaining the currently stored external parameter value of the nor flash according to the number of the second numerical values in the second sector, the number M of the basic storage units, the number N of the basic storage units and the number of the second numerical values in the first sector.
Preferably, when the external parameter to be added is detected, rewriting a first value of a predetermined number of bits of a basic memory cell in the first sector to a second value in the order of addresses specifically includes:
when the external parameters to be increased are detected, acquiring the number of bits to be operated of the basic storage unit currently operated;
when the number of bits to be operated is less than or equal to M, rewriting the number of bits to be operated from 1 to 0;
when the bit number to be operated is larger than M, acquiring a next basic storage unit positioned behind the currently operated basic storage unit in the first sector according to an address;
if there is a next basic memory cell, rewriting a first bit of the next basic memory cell from a first value to a second value;
if the next basic memory cell does not exist, all data in the first sector is erased and the first value of the predetermined number of bits of the current basic memory cell in the second sector is rewritten to the second value.
Preferably, the currently stored external parameter value NUM of nor flash is N2*M*N+N1(ii) a Wherein N is2The number of the second numerical values in the second sector; n is a radical of1Is the number of the second values in the first sector.
Preferably, the method further comprises the following steps:
at the time of initial use or reset, all data of the first sector and the second sector are erased.
Preferably, the first value is 1 and the second value is 0.
The implementation of the invention also provides a counting device based on the nor flash, which comprises:
the device comprises an acquisition unit, a storage unit and a control unit, wherein the acquisition unit is used for acquiring the bit number M of operable basic storage units in the nor flash and the number N of the basic storage units contained in each sector; the nor flash comprises a first sector and a second sector, wherein the first sector is a bit number counting area and is used for counting by using the number of bits; the second sector is used for counting as a digit counting area;
a rewriting unit configured to rewrite, when an external parameter to be added is detected, a predetermined number of bits of a basic memory cell in the first sector from a first value to a second value in order of addresses; and
and the counting unit is used for obtaining the currently stored external parameter value of the nor flash according to the number of the second numerical values in the second sector, the number M of the basic storage units, the number N of the basic storage units and the number of the second numerical values in the first sector.
Preferably, the rewriting unit specifically includes:
the to-be-operated digit acquisition module is used for acquiring the to-be-operated digit of the currently operated basic storage unit when the external parameter to be increased is detected;
the first rewriting module is used for rewriting the number of the bits to be operated from a first numerical value to a second numerical value when the number of the bits to be operated is less than or equal to M;
the address updating module is used for acquiring a next basic storage unit behind the currently operated basic storage unit in the first sector according to an address when the number of bits to be operated is greater than M;
a second rewrite module for, if a next basic memory cell exists, rewriting a first bit of the next basic memory cell from a first value to a second value;
and the third rewriting module is used for erasing all data in the first sector if the next basic storage unit does not exist, and rewriting the first numerical value of the preset digit of the current basic storage unit in the second sector into the second numerical value.
Preferably, the currently stored external parameter value NUM of nor flash is N2*M*N+N1(ii) a Wherein N is2The number of the second numerical values in the second sector; n is a radical of1Is the number of the second values in the first sector.
The embodiment of the invention also provides a counting device based on the nor flash, which comprises a memory and a processor, wherein a computer program is stored in the memory, and can be executed by the processor to realize the counting method based on the nor flash.
An embodiment of the present invention further provides a computer-readable storage medium, where a computer program is stored, where the computer program can be executed by a processor of a device where the computer-readable storage medium is located, so as to implement the above-mentioned nor flash-based counting method.
In the above embodiment, the flash memory is implemented by using a nor flashThe number of bits of the first sector is counted, two counting levels of the first sector and the second sector are set simultaneously to realize combined counting, the first sector can be erased only after N × M times of counting, and the second sector can be erased even after N times of counting2*M2The erasing is generated after the counting, so that the influence of excessive erasing actions on the service life of the nor flash is avoided.
Drawings
In order to more clearly illustrate the technical solution of the present invention, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic flow chart of a nor flash-based counting method according to a first embodiment of the present invention.
Fig. 2 is a diagram illustrating a state of the first sector.
Fig. 3 is another state diagram of the first sector.
Fig. 4 is a block diagram of a nor flash-based counting apparatus according to a second embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1 and fig. 2, a first embodiment of the present invention provides a nor flash based counting method, which can be executed by a nor flash based counting device (hereinafter, referred to as a counting device), in particular, by one or more processors in the nor flash based counting device, and at least includes the following steps:
s101, acquiring the number M of operable basic storage units in the nor flash and the number N of the basic storage units contained in each sector; the nor flash comprises a first sector and a second sector, wherein the first sector is a bit number counting area and is used for counting by using the number of bits; the second sector is used for counting as a digit statistics area.
In this embodiment, the nor flash is generally composed of a plurality of blocks or sectors (hereinafter, referred to as sectors), each sector further includes N basic memory cells, and each basic memory cell has N bits, such as 8 bits, 16 bits, or 32 bits. In the initial state, each bit of the basic memory cell is a first value (usually 1, and hereinafter, 1 is used instead). Since the norflash can only be programmed from a first value to a second value (usually 0, hereinafter 0 is used instead), the embodiment uses 1 to represent the value 0, and 0 to represent a value 1. That is, if a 1 of one bit is written to 0 at the time of overwriting, it represents that the value thereof is increased by 1 accordingly.
In this embodiment, to implement counting, at least one sector is set as a first sector and at least one sector is set as a second sector from a nor flash, where the first sector is a bit count statistics area for implementing counting by using the number of bits; the second sector is used for counting as a digit counting area, and the counting can be realized by rewriting digits in the first sector and the second sector.
It should be noted that, in other embodiments of the present invention, more counting levels may be set according to actual needs, for example, the third sector is set to count the second sector, and these schemes are within the protection scope of the present invention.
It should be noted that, if the nor flash needs to be reset, all the data of the first sector and the second sector need to be erased.
S102, when the external parameter to be added is detected, the predetermined number of bits of one basic storage unit in the first sector is rewritten from a first value to a second value according to the sequence of addresses.
In the present embodiment, when an external parameter to be increased is detected, such as one printing, a mileage increase by 1, or an increase by one cutter operation, the counting apparatus rewrites the predetermined number of bits of one basic memory cell in the first sector from 1 to 0 in order of addresses to record the increased external parameter. The modification method is to set the bits to 0xff, 0xffff or 0xfffffff and the like according to the bits, to perform an AND operation on the bits which need to be set to 0 and 0, and then to write the corresponding address.
In this embodiment, when rewriting, the counting device first obtains the number of bits to be operated of the basic memory cell currently operated by the first sector.
And when the number of bits to be operated is less than or equal to M, rewriting the number of bits to be operated from 1 to 0.
As shown in fig. 2, assuming that M is 8, assuming that the currently operated basic memory cell is the first basic memory cell, and the number of bits to be operated is 7 th bit (i.e. the first non-0 bit, the current number of bits to be operated can be obtained by adding 1 to the previous number of bits to be operated), the counting device rewrites the 7 th bit from 1 to 0.
And when the bit number to be operated is larger than M, acquiring a next basic storage unit positioned behind the currently operated basic storage unit in the first sector according to the address.
As shown in fig. 3, let M be 8, assume that the currently operated basic memory cell is the first basic memory cell, and since all the bits of the currently operated basic memory cell have been operated, the current bit number to be operated is the 9 th bit, which means that all the bits of the current basic memory cell have been operated, and therefore, it is necessary to enter the next basic memory cell, i.e. the first bit of the second basic memory cell, according to the address to write data.
If there is a next basic memory cell, the first bit of the next basic memory cell is rewritten from 1 to 0.
If the next basic memory cell does not exist, all data in the first sector is erased and 1 of a predetermined number of bits of the current basic memory cell in the second sector is rewritten to 0.
In this embodiment, if there is no next basic memory cell, it indicates that all basic memory cells of the first sector have been operated, and at this time, all data in the first sector is erased (i.e., all 0 s of the first sector are written to 1), and at the same time, 1 of the predetermined number of bits of the current basic memory cell in the second sector is written to 0. The rewrite rule for the basic memory cell of the second sector is the same as that of the first sector, and the description of the present invention is omitted here.
And S103, obtaining the currently stored external parameter value of the nor flash according to the number of 0 in the second sector, the bit number M of the basic storage unit, the number N of the basic storage unit and the number of 0 in the first sector.
In this embodiment, the external parameter value NUM stored in the nor flash currently is N2*M*N+N1(ii) a Wherein N is2The number of 0 in the second sector; n is a radical of1Is the number of 0 s in the first sector.
In summary, the counting method based on the nor flash according to the embodiment counts by using the change of the bit number of the nor flash, and sets two counting levels of the first sector and the second sector to realize the combined counting, wherein the first sector is erased only after counting N × M times, and the second sector is further erased N times2*M2The erasing is generated after the counting, so that the influence of excessive erasing actions on the service life of the nor flash is avoided.
Referring to fig. 4, a second embodiment of the present invention further provides a nor flash-based counting apparatus, including:
an obtaining unit 210, configured to obtain the number M of bits of operable basic storage units in the nor flash and the number N of basic storage units included in each sector; the nor flash comprises a first sector and a second sector, wherein the first sector is a bit number counting area and is used for counting by using the number of bits; the second sector is used for counting as a digit counting area;
an overwriting unit 220 for overwriting a predetermined number of bits of a basic memory cell in the first sector from a first value to a second value in order of addresses when the external parameter to be added is detected; and
and the counting unit 230 is configured to obtain an external parameter value currently stored by the norflash according to the number of the second numerical values in the second sector, the number M of the basic storage units, the number N of the basic storage units, and the number of the second numerical values in the first sector.
Preferably, the rewriting unit 220 specifically includes:
the to-be-operated digit acquisition module is used for acquiring the to-be-operated digit of the currently operated basic storage unit when the external parameter to be increased is detected;
the first rewriting module is used for rewriting the number of the bits to be operated from a first numerical value to a second numerical value when the number of the bits to be operated is less than or equal to M;
the address updating module is used for acquiring a next basic storage unit behind the currently operated basic storage unit in the first sector according to an address when the number of bits to be operated is greater than M;
a second rewrite module for, if a next basic memory cell exists, rewriting a first bit of the next basic memory cell from a first value to a second value;
and the third rewriting module is used for erasing all data in the first sector if the next basic storage unit does not exist, and rewriting the first numerical value of the preset digit of the current basic storage unit in the second sector into the second numerical value.
Preferably, the currently stored external parameter value NUM of nor flash is N2*M*N+N1(ii) a Wherein N is2The number of the second numerical values in the second sector; n is a radical of1Is the number of the second values in the first sector.
Preferably, the method further comprises the following steps:
and the resetting module is used for erasing all data of the first sector and the second sector when the first sector is used for the first time or the resetting is carried out.
The third embodiment of the present invention further provides a nor flash based counting device, which includes a memory and a processor, wherein a computer program is stored in the memory, and the computer program can be executed by the processor, so as to implement the above-mentioned nor flash based counting method.
The fourth embodiment of the present invention further provides a computer-readable storage medium, wherein a computer program is stored, and the computer program can be executed by a processor of a device where the computer-readable storage medium is located, so as to implement the above-mentioned nor flash-based counting method.
Illustratively, the computer programs described herein can be partitioned into one or more modules that are stored in the memory and executed by the processor to implement the invention. The one or more modules may be a series of computer program instruction segments capable of performing certain functions, which are used to describe the execution of the computer program in the implementation device. For example, the device described in the second embodiment of the present invention.
The Processor may be a Central Processing Unit (CPU), other general purpose Processor, a Digital Signal Processor (DSP), an APPlication Specific Integrated Circuit (ASIC), a Field-Programmable Gate Array (FPGA) or other Programmable logic device, discrete Gate or transistor logic device, discrete hardware component, or the like. A general-purpose processor, which may be a microprocessor or the processor may be any conventional processor or the like, is the control center for the printing method, and connects the various parts of the overall counting method using various interfaces and lines.
The memory may be used to store the computer programs and/or modules, and the processor may implement various functions of the printing method by executing or executing the computer programs and/or modules stored in the memory and calling data stored in the memory. The memory may mainly include a storage program area and a storage data area, wherein the storage program area may store an operating system, an application program required by at least one function (such as a sound playing function, a text conversion function, etc.), and the like; the storage data area may store data (such as audio data, text message data, etc.) created according to the use of the user terminal, etc. In addition, the memory may include high speed random access memory, and may also include non-volatile memory, such as a hard disk, a memory, a plug-in hard disk, a Smart Media Card (SMC), a Secure Digital (SD) Card, a Flash memory Card (Flash Card), at least one magnetic disk storage device, a Flash memory device, or other volatile solid state storage device.
Wherein, the module for realizing the user terminal can be stored in a computer readable storage medium if it is realized in the form of software functional unit and sold or used as a stand-alone product. Based on such understanding, all or part of the flow of the method according to the embodiments of the present invention may also be implemented by a computer program, which may be stored in a computer-readable storage medium, and when the computer program is executed by a processor, the steps of the method embodiments may be implemented. Wherein the computer program comprises computer program code, which may be in the form of source code, object code, an executable file or some intermediate form, etc. The computer-readable medium may include: any entity or device capable of carrying the computer program code, recording medium, usb disk, removable hard disk, magnetic disk, optical disk, computer Memory, Read-only Memory (ROM), Random Access Memory (RAM), electrical carrier wave signals, telecommunications signals, software distribution medium, etc. It should be noted that the computer readable medium may contain content that is subject to appropriate increase or decrease as required by legislation and patent practice in jurisdictions, for example, in some jurisdictions, computer readable media does not include electrical carrier signals and telecommunications signals as is required by legislation and patent practice.
It should be noted that the above-described device embodiments are merely illustrative, where the units described as separate parts may or may not be physically separate, and the parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of the present embodiment. In addition, in the drawings of the embodiment of the apparatus provided by the present invention, the connection relationship between the modules indicates that there is a communication connection between them, and may be specifically implemented as one or more communication buses or signal lines. One of ordinary skill in the art can understand and implement it without inventive effort.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A counting method based on nor flash is characterized by comprising the following steps:
acquiring the bit number M of operable basic storage units in the nor flash and the number N of the basic storage units contained in each sector; the nor flash comprises a first sector and a second sector, wherein the first sector is a bit number counting area and is used for counting by using the number of bits; the second sector is used for counting as a digit counting area;
when the external parameter to be added is detected, rewriting a predetermined number of bits of a basic storage unit in the first sector from a first value to a second value in order of addresses; and
and obtaining the currently stored external parameter value of the nor flash according to the number of the second numerical values in the second sector, the number M of the basic storage units, the number N of the basic storage units and the number of the second numerical values in the first sector.
2. The nor flash-based counting method of claim 1, wherein the rewriting the first value of the predetermined number of bits of the basic memory cell in the first sector to the second value in the order of the addresses when the external parameter to be added is detected comprises:
when the external parameters to be increased are detected, acquiring the number of bits to be operated of the basic storage unit currently operated;
when the number of bits to be operated is less than or equal to M, rewriting the number of bits to be operated from 1 to 0;
when the bit number to be operated is larger than M, acquiring a next basic storage unit positioned behind the currently operated basic storage unit in the first sector according to an address;
if there is a next basic memory cell, rewriting a first bit of the next basic memory cell from a first value to a second value;
if the next basic memory cell does not exist, all data in the first sector is erased and the first value of the predetermined number of bits of the current basic memory cell in the second sector is rewritten to the second value.
3. The nor flash-based counting method according to claim 1, wherein the currently stored external parameter value NUM ═ N of the nor flash2*M*N+N1(ii) a Wherein N is2The number of the second numerical values in the second sector; n is a radical of1Is the number of the second values in the first sector.
4. The nor flash-based counting method according to claim 1, further comprising:
at the time of initial use or reset, all data of the first sector and the second sector are erased.
5. The nor flash based counting method of any one of claims 1 to 4, wherein the first value is 1 and the second value is 0.
6. A nor flash-based counting apparatus, comprising:
the device comprises an acquisition unit, a storage unit and a control unit, wherein the acquisition unit is used for acquiring the bit number M of operable basic storage units in the nor flash and the number N of the basic storage units contained in each sector; the nor flash comprises a first sector and a second sector, wherein the first sector is a bit number counting area and is used for counting by using the number of bits; the second sector is used for counting as a digit counting area;
a rewriting unit configured to rewrite, when an external parameter to be added is detected, a predetermined number of bits of a basic memory cell in the first sector from a first value to a second value in order of addresses; and
and the counting unit is used for obtaining the currently stored external parameter value of the nor flash according to the number of the second numerical values in the second sector, the number M of the basic storage units, the number N of the basic storage units and the number of the second numerical values in the first sector.
7. The nor flash-based counting device of claim 6, wherein the rewriting unit specifically comprises:
the to-be-operated digit acquisition module is used for acquiring the to-be-operated digit of the currently operated basic storage unit when the external parameter to be increased is detected;
the first rewriting module is used for rewriting the number of the bits to be operated from a first numerical value to a second numerical value when the number of the bits to be operated is less than or equal to M;
the address updating module is used for acquiring a next basic storage unit behind the currently operated basic storage unit in the first sector according to an address when the number of bits to be operated is greater than M;
a second rewrite module for, if a next basic memory cell exists, rewriting a first bit of the next basic memory cell from a first value to a second value;
and the third rewriting module is used for erasing all data in the first sector if the next basic storage unit does not exist, and rewriting the first numerical value of the preset digit of the current basic storage unit in the second sector into the second numerical value.
8. The nor flash based on claim 5The counting device is characterized in that the external parameter value NUM currently stored by the nor flash is equal to N2*M*N+N1(ii) a Wherein N is2The number of the second numerical values in the second sector; n is a radical of1Is the number of the second values in the first sector.
9. A nor flash based counting device, comprising a memory and a processor, wherein the memory stores a computer program, and the computer program can be executed by the processor to realize the nor flash based counting method according to any one of claims 1 to 5.
10. A computer-readable storage medium, in which a computer program is stored, the computer program being executable by a processor of an apparatus in which the computer-readable storage medium is located to implement the nor flash-based counting method according to any one of claims 1 to 5.
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| CN202010460868.5A CN111813704A (en) | 2020-05-27 | 2020-05-27 | Counting method, device and equipment based on nor flash and readable storage medium |
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| CN202010460868.5A CN111813704A (en) | 2020-05-27 | 2020-05-27 | Counting method, device and equipment based on nor flash and readable storage medium |
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| US20060133560A1 (en) * | 2004-12-03 | 2006-06-22 | Kyocera Mita Corporation | Counter device and counting method |
| US20120121060A1 (en) * | 2010-11-17 | 2012-05-17 | Atmel Corporation | Non-volatile memory counter |
| CN104361907A (en) * | 2014-10-10 | 2015-02-18 | 宁波三星电气股份有限公司 | Counting method of FLASH memory |
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2020
- 2020-05-27 CN CN202010460868.5A patent/CN111813704A/en not_active Withdrawn
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060133560A1 (en) * | 2004-12-03 | 2006-06-22 | Kyocera Mita Corporation | Counter device and counting method |
| CN1700642A (en) * | 2005-05-25 | 2005-11-23 | 北京兆日科技有限责任公司 | A method for implementing monotone counter |
| US20120121060A1 (en) * | 2010-11-17 | 2012-05-17 | Atmel Corporation | Non-volatile memory counter |
| CN104361907A (en) * | 2014-10-10 | 2015-02-18 | 宁波三星电气股份有限公司 | Counting method of FLASH memory |
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Application publication date: 20201023 |