CN111812762A - Infrared cut-off filter for improving glare ghost phenomenon and preparation method thereof - Google Patents
Infrared cut-off filter for improving glare ghost phenomenon and preparation method thereof Download PDFInfo
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- CN111812762A CN111812762A CN202010684804.3A CN202010684804A CN111812762A CN 111812762 A CN111812762 A CN 111812762A CN 202010684804 A CN202010684804 A CN 202010684804A CN 111812762 A CN111812762 A CN 111812762A
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- G—PHYSICS
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- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/281—Interference filters designed for the infrared light
- G02B5/282—Interference filters designed for the infrared light reflecting for infrared and transparent for visible light, e.g. heat reflectors, laser protection
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- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
- B05D1/005—Spin coating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/04—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
- B05D3/0493—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases using vacuum
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
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- B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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Abstract
An infrared cut filter for improving glare ghost phenomenon comprises a substrate with a refractive index of 1.45-1.55, wherein first film layers with an optical film thickness of 70-100nm and a refractive index of 1.38-1.50 are arranged on two sides of the substrate, and second film layers with an optical film thickness of 80-110 nm and a refractive index of 1.15-1.23 are arranged on one side, away from the substrate, of each first film layer; the average transmittance of the substrate to light with the wavelength within the range of 350-395 nm is less than or equal to 3%, the minimum transmittance of the substrate in the waveband of 425-565 nm is more than or equal to 70%, the maximum transmittance of the substrate in the waveband of 725-1100 nm is less than or equal to 1.5%, and the central wavelength of the substrate at the position where the transmittance is 50% is 640 +/-5 nm. The substrate can carry out depth cutoff on a 700-1080 nm waveband, carries out double-sided ultra-low reflection structure design on the substrate, adopts a coating process, realizes that a high-performance and ultra-low reflection cutoff film is obtained in a visible light broadband wavelength range, reduces emission between an image plane and IRCF, has smaller visible domain wavelength shift when CRA changes, greatly improves glare ghost, and solves the problem of serious glare ghost when mobile phone imaging is carried out in the market.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to the field of optics, in particular to an infrared cut-off filter for improving a glare ghost phenomenon of a camera module and a preparation method thereof in the field of camera modules.
[ background of the invention ]
The camera module (CCM) is a core device for various novel portable camera equipment, is mainly applied to the fields of mobile phones, notebook computers, tablet computers, smart homes, vehicles, VR/AR, safety monitoring and the like, and has the advantages of miniaturization, low power consumption, low cost, high image quality and the like compared with the traditional camera system.
The imaging process of the camera is the process of digitizing the optical signal. The light firstly passes through the lens and reaches a photosensitive element (CCD or CMOS), the light is converted into a digital signal, and then the digital signal is transmitted to a processor (DSP), and the digital signal is subjected to image signal enhancement and compression optimization and then transmitted to a mobile phone or other storage devices. The camera module mainly comprises a glass Cover plate (Cover), a Lens (Lens), an infrared cut Filter (IRCF or IR Filter), an image Sensor (Sensor) and a Flexible Printed Circuit (FPC).
When the lens is affected by some non-ideal factors during the image transmission process, the light error can be deflected to cause aberration, and glare (Flare) and/or Ghost (Ghost) phenomena can occur. Glare and/or ghosting are directly related to the properties of the surface of the optical element. Most of optical elements such as lenses and optical filters included in an optical system use a transparent member such as optical glass or optical plastic as a substrate, and when the refractive index of the substrate increases, the reflectance of the light incident surface and the light emitting surface increases, and the amount of effective light reaching the image surface decreases; meanwhile, the phenomenon of internal reflection and re-reflection cannot be avoided among the optical elements, and finally the optical elements are incident on an image surface to form ghost images, so that the imaging quality and the user experience are seriously influenced.
There are two major improvements currently on the market to the glare and/or ghost problem: one is to optimize the coating process of the optical element and the dispersion correction of the lens by design (hardware mode), and the other is to perform software post correction (software mode). For example, CN106662676A discloses a camera module and a terminal, which includes an optical protection window, an infrared cut filter and an anti-reflection coating, where the anti-reflection coating includes several tapered anti-reflection structures, the diameter of the bottom of the anti-reflection structure is 40 nm-150 nm, the diameter of the top of the anti-reflection structure is 0-30% of the diameter of the bottom of the anti-reflection structure, the height of the anti-reflection coating is 150 nm-300 nm, two adjacent tapered anti-reflection structures have the wavelength of 1/5-1/3 of the visible light band, and the anti-reflection coating structure is set to reduce the light reflection, so as to solve the problems of ghost and glare; for another example, CN104299188B discloses an image correction method and system, in which an area in which a ghost and/or a glare are located in an image is determined according to a brightness value of each pixel in the image, and the area is processed by using methods such as opening operation, closing operation, and area filling, so as to correct the ghost and the glare in the image in a software manner. However, any means can only be applied to specific application environments, and cannot meet the requirements of the existing micro-miniature camera module (such as a mobile phone) on glare/ghost elimination.
For a micro camera module in an application environment such as a mobile phone, there are mainly 4 reflections, i.e., reflection between a Lens (Lens) and a Cover, reflection between lenses (Lens), reflection between an infrared cut filter (IRCF) and a Lens (Lens), and reflection between an image plane (Sensor side) and an infrared cut filter (IRCF), which are reflections caused by incident light entering the camera module, as shown in fig. 1.
The imaging problems caused by the above four reflections and the existing solutions are as follows:
the ghost image caused by the reflection between the Lens (Lens) and the Cover generally takes a visible part as a main part, the color is white or blue-green, the color is common, the shape is similar to that of an original object, and the existing common solution is to plate an AR (anti-reflection) film to reduce the reflection.
Secondly, the reflection between lenses (Lens) easily causes the formation of a string of spot images (glare), and because the reflected light rays causing the problem are all visible light parts, the spot images cannot be effectively improved through IRCF (infrared reflection filter), but the reflection can be reduced through coating, and the reflected light rays cannot be imaged on an image plane to be improved through the design of a Lens light path.
③ the reflection between the infrared cut filter (IRCF) and the Lens (Lens) causes the corner red light. For the incident light rays with different angles, the coating curve can have the offset phenomenon; the larger the angle of incidence, the larger the offset; the deviation of this part of the wavelength light is the main reason for the formation of corner red light. When large-angle incident light is reflected by a micro lens (Microlens) on the image surface, the light may re-pass through an infrared cut filter (IRCF) at a small angle, and most of the light wavelength is large-angle and small-angle offset partial wavelength (the offset partial wavelength is generally concentrated in a wavelength band of 600-700 nm), a corner red ghost is formed on the image surface. Since the wavelengths of the light forming the part of the ghost image mostly coincide with the absorption area of the blue glass, the part of the reflected light is reduced by the IRCF of the blue glass so as to improve the phenomenon.
The reflection between the image plane and the infrared cut-off filter (IRCF) can cause petal-shaped red ghost, the reason similar to the reason for forming corner red ghost is that after the incident light is reflected by the micro lens (microlenses), the incident light can be reflected back to the infrared cut-off filter (IRCF) at a large angle, and the light with the same large angle can reflect the partial light of the offset waveband to the image plane, and the petal-shaped ghost is formed after multiple reflections. The prior art also uses blue glass IRCF to attenuate this portion of the reflected light to ameliorate this phenomenon.
However, the existing infrared cut-off filter in the market adopts a film coating method, one surface is coated with AR, the other surface is coated with IR, the cost is high, the reflectivity of the AR surface and the IR surface is high, the emission between the image surface and the IRCF (infrared cut-off filter) is large, when the CRA (main incident angle) changes, the visible domain wavelength shift is large, the problem of ghost of light is serious during imaging, Ripple is serious (as shown in fig. 6), and the problem cannot be effectively improved only by using blue glass which has absorption characteristics for the offset part of light reflected by the IR surface, which becomes one of the main factors for limiting the imaging effect of the current miniature camera module; in order to obtain low reflectivity and high absorptivity, the existing blue glass infrared cut filter needs to be coated for many times, and the coating process is complex and needs to be further improved.
[ summary of the invention ]
The invention provides an infrared cut-off filter for improving a glare ghost phenomenon, which can effectively solve the glare/ghost problem in the imaging process of the existing mobile phone camera module. The invention also provides a preparation method of the infrared cut-off filter, which simplifies the preparation process and reduces the production cost.
The technical solution of the invention is as follows: an infrared cut-off filter for improving a glare ghost phenomenon comprises a substrate with a refractive index of 1.45-1.55, wherein first film layers with an optical film thickness of 70-100nm and a refractive index of 1.38-1.50 are arranged on two sides of the substrate, a second film layer with an optical film thickness of 80-110 nm and a refractive index of 1.15-1.23 is arranged on one side, away from the substrate, of each first film layer, and the refractive indexes are refractive indexes with a reference wavelength of 550 nm; the average transmittance of the substrate to light with the incident angle of 0 DEG and the wavelength of 350-395 nm is less than or equal to 3%, the transmittance of the substrate in a 350-380 nm band is less than or equal to 0.7%, the minimum transmittance in a 400-420 nm band is greater than or equal to 28%, the minimum transmittance in a 425-565 nm band is greater than or equal to 70%, the average transmittance is greater than or equal to 84%, the transmittance in a 450-600 nm band is greater than or equal to 80%, the average transmittance in a 700-725 nm band is less than or equal to 2.5%, the transmittance in a 755-1000 nm band is less than or equal to 0.2%, the average transmittance in a 725-1100 nm band is less than or equal to 0.5%, the maximum transmittance is less than or equal to 1.5%, the average transmittance in a 900-1000 nm band is less than or equal to 0.1%, the maximum transmittance is less than or equal to 0.2%, and the center wavelength at the transmittance of 50% is 410.
The structure of the invention can realize that a high-performance and ultra-low reflection cut-off film can be obtained in the wavelength range of the visible light broadband, the refractive index of the substrate is greater than the refractive index of the first film layer and greater than the refractive index of the second film layer, thereby reducing the sensitivity of the reflection characteristic, simultaneously, the substrate can realize the efficient passing of the visible light and the deep cut-off in the wave band of 750-1080 nm, the process of realizing the function by plating the film on the substrate in the existing market is cancelled, the structure is simplified, the effect is improved, and the infrared cut-off filter with the structure can effectively improve the glare/ghost problem when the existing mobile phone camera module is used for imaging, thereby greatly improving the imaging quality.
Preferably, the substrate is mainly prepared from a silicon-element-containing resin raw material.
Preferably, the substrate is prepared mainly from a raw material containing a silicone resin.
Preferably, the first film layer is mainly composed of an oxide containing silicon or a compound containing magnesium, and the second film layer is mainly composed of hollow fine particles containing Si.
Preferably, the first film layer is SiO2Or MgF2The second film layer is mainly hollow SiO2。
Preferably, the average particle diameter (D) of the Si-containing hollow fine particles50) Is 50 nm.
Preferably, the first film layer and the second film layer have the reflectivity of less than or equal to 0.6 percent and the average reflectivity of less than or equal to 0.21 percent for light rays with the incident angle of 0 degree and the wavelength of 400 nm-700 nm, and the wave band at the lowest point of the curve falls within 500 +/-10 nm.
A method for preparing an infrared cut filter for improving a glare ghost phenomenon includes the following steps:
1) carrying out ultrasonic cleaning on the substrate, and centrifugally drying;
2) plating a first film layer on one side of the substrate in a sputtering mode, and centrifugally cleaning;
3) plating a first film layer on the other side of the substrate in a sputtering mode, and centrifugally cleaning;
4) vacuum adsorption is carried out on the periphery, the base material coated with the first film layer is placed on a coating table, AR ink with low refractive index is dripped on the surface of the first film layer of the base material under the condition of high-speed rotation, coating is carried out to form a second film layer, the base plate is turned over after one surface is coated, and the second film layer is formed on the other surface after the other surface is coated;
5) after finishing coating the double-sided AR ink, baking in vacuum;
6) pasting a UV film, and baking in a vacuum oven;
7) and cutting the cutter wheel into finished products.
Preferably, the AR ink is baked at a vacuum baking temperature of 70-90 ℃ and the UV film is baked at a vacuum baking temperature of 45 ℃.
Preferably, the vacuum suction in step 4) is performed by sucking and fixing the edge of the substrate to a suction hole groove provided in the coating table.
The invention has the following beneficial effects:
1. the minimum transmittance of the substrate adopted by the invention in the wave band of 425-565 nm is more than or equal to 70 percent, the transmittance in the 700-725 nm wave band is less than or equal to 2.5 percent, the average transmittance in the 725-1100 nm wave band is less than or equal to 0.5 percent, the maximum transmittance is less than or equal to 1.5 percent, the transmittance in the 755-1000 nm wave band is less than or equal to 0.2 percent, the central wavelength at the 50 percent transmittance is 640 +/-5 nm, the high-performance and ultralow-reflection cut-off film is obtained in the visible light broadband wavelength range by combining the design of a double-sided ultralow-reflection structure, namely a first film layer with the refractive index of 1.38-1.50 and a second film layer with the refractive index of 1.15-1.23, the reflection between an image plane and an IRCF (infrared cut-off filter) is reduced, and when the CRA (main incidence angle) is changed, the wavelength shift of the visible domain is smaller (as shown in fig. 5), the glare/ghost phenomenon of the camera module is greatly improved, especially the petal-shaped ghost, and the problem of serious glare/ghost phenomenon in mobile phone imaging in the market is solved.
2. The invention has simple design structure, only comprises the substrate, the first film layer and the second film layer, adopts the coating processing technology, and adopts the hollow SiO2Through AR printing ink dropwise add to the rotatory base plate dispersion coating at a high speed, can guarantee that the printing ink layer coating is even, avoids appearing badly such as radially, color spot, stripe, and the process flow is short, and coating efficiency is high, can control the coating layer thickness better, and the cost of manufacture is low, has two-sided ultralow reflection effect, and the membrane firmness is excellent.
[ description of the drawings ]
FIG. 1 illustrates the reflection of light in a conventional camera module;
FIG. 2 is a schematic diagram of a filter according to a first embodiment;
FIG. 3 is a graph showing transmittance characteristics of a substrate according to the first embodiment;
fig. 4 is a reflectance characteristic diagram of the infrared cut filter of the first embodiment at different incident angles (0 ° and 30 °);
fig. 5 is a graph showing transmittance characteristics at different incident angles (0 ° and 30 °) of the infrared cut filter of the first embodiment;
fig. 6 is a reflectance characteristic diagram of a conventional infrared cut filter at different incident angles (0 ° and 30 °);
FIG. 7 shows the effect of a conventional camera module (not shown) in a darkroom;
fig. 8 shows the effect of the camera module using the ir-cut filter according to the first embodiment on the lamp in the dark room (color not shown);
FIG. 9 is a schematic cross-sectional view illustrating a combination of a substrate and a UV film with an iron ring according to an embodiment.
Description of the labeling: 1-a substrate; 2-a first film layer; 3-a second film layer; 4-UV film; 5-iron ring.
[ detailed description ] embodiments
The present invention will be described in further detail with reference to the following examples, but the present invention is not limited to the following examples.
The following examples are not provided to limit the scope of the present invention, nor are the steps described to limit the order of execution, and the directions described are limited to the drawings. Modifications of the invention which are obvious to those skilled in the art in view of the prior art are also within the scope of the invention as claimed.
Example 1
As shown in fig. 2, an infrared cut filter for improving the phenomenon of glare ghost comprises a substrate 1 with a refractive index of 1.52, first film layers 2 with an optical film thickness of 90nm and a refractive index of 1.47 are arranged on two sides of the substrate, second film layers 3 with an optical film thickness of 100nm and a refractive index of 1.16 are arranged on one sides of the first film layers away from the substrate, and the refractive indexes are refractive indexes with a reference wavelength of 550 nm. The substrate 1 is prepared from raw materials including silicone resin, phenylphosphonic acid, (4-bromophenyl) phosphonic acid, phosphate ester, and copper (II) acetate hydrate. Specifically, materials of silicone resin, phenylphosphonic acid, (4-bromophenyl) phosphonic acid, phosphate and copper (II) acetate-hydrate are mixed and stirred to form a mixture, then the surface of a mold with a proper size is treated by a release agent, the mixture is dripped onto the mold provided with the release agent, the mixture is dried and hardened to form a composite membrane, and the composite membrane is peeled from the mold to form the substrate 1.
The first film layer 2 is mainly made of SiO2The second film layer 3 is mainly made of hollow SiO2Made of hollow SiO2Has an average particle diameter of 50 nm. The average transmittance of the substrate 1 to light rays with the incident angle of 0 DEG and the wavelength of 350-395 nm is less than or equal to 3%, the transmittance of the substrate in a wave band of 350-380 nm is less than or equal to 0.7%, the minimum transmittance in a wave band of 400-420 nm is greater than or equal to 28%, the minimum transmittance in a wave band of 425-565 nm is greater than or equal to 70%, the average transmittance is greater than or equal to 84%, the transmittance in a wave band of 450-600 nm is greater than or equal to 80%, the average transmittance in a wave band of 700-725 nm is less than or equal to 2.5%, the transmittance in a wave band of 755-1000 nm is less than or equal to 0.2%, the average transmittance in a wave band of 725-1100 nm is less than or equal to 0.5%, the maximum transmittance is less than or equal to 1.5%, the average transmittance in a wave band of 900-1000 nm is less than or equal to 0.1%, the maximum transmittance is less than or equal to 0.. As shown in FIG. 4, the reflectance of the first and second film layers for light with an incident angle of 0 ° and a wavelength of 400 nm-700 nm is less than or equal to 0.6%, the average reflectance is less than or equal to 0.21%, and the wave band at the lowest point of the curve falls to 500 nm; the reflectivity of the light with the incident angle of 30 degrees and the wavelength of 400 nm-550 nm is less than or equal to 0.21 percent, the wave band at the lowest point of the curve is 463nm, and the petal type glare ghost phenomenon caused by overlarge reflection between the image plane and the infrared cut-off filter (IRCF) when the incident angle (CRA) is changed can be effectively solved.
The transmittance characteristics of the infrared cut filter of the present embodiment are shown in fig. 5, where the average transmittance for an incident angle of 0 ° and an optical wavelength in a 430-600 nm band is 92.1%, the minimum value is 80.2%, the transmittance in a 750-800 nm band is not more than 0.2%, the average transmittance in a 750-1000 nm band is not more than 0.1%, and the center wavelength at which the transmittance is 50% is 640 nm; when the incident angle of the light is 30 °, the transmittance in the above wavelength band is substantially the same as the transmittance of the light having an incident angle of 0 ° in the corresponding wavelength band, and the deviation is extremely small because the center wavelength at 50% transmittance is 638 nm.
The method for preparing the infrared cut filter for improving the glare ghost phenomenon comprises the following specific steps:
(A) the substrate 1 synthesized from raw materials such as silicone resin is cleaned by an ultrasonic cleaning process. In the step, the first ultrasonic cleaning tank adopts an alkaline detergent with pH of 10-10.5, the second tank to the seventh tank adopt pure water for cleaning, the frequency is set to 80HZ, dirt on the surface of a film to be plated of the substrate 1, organic materials and other dirt are washed off, the surface cleanliness of the substrate 1 is ensured, the quality of the plated film is improved, and after cleaning, the substrate 1 is dried through a centrifugal machine at 40 ℃.
(B) Coating a single layer of SiO on one side of a substrate 12. As shown in fig. 9, firstly, the reverse side of the surface to be coated of the substrate 1 is attached to the UV film 4 with the iron ring 5 for fixation, so as to avoid the product from warping during coating, and then SiO is coated on the substrate 12The designed film is deposited by adopting ion source precleaning and sputtering coating methods, the thickness of the film is 70-100nm, preferably 90nm, the coating temperature is 30-40 ℃, the influence of high temperature on the strength of the substrate 1 is avoided, and the production efficiency is high.
(C) Cleaning the surface of the coated substrate by adopting a centrifugal spin-washing mode so as to remove dirt such as organic materials and the like generated during coating; during centrifugal spin washing, the substrate is washed by pure water for 60s at 800rpm, then washed for 30s at 2000rpm, and finally spun for 80s at 2000 rpm. In addition, in this step, the substrate after the coating may be cleaned by the ultrasonic cleaning in the step (a), and when the substrate is cleaned by the ultrasonic cleaning in the step (a), the alkaline detergent in the first tank is removed and the substrate is cleaned by pure water.
(D) The substrate 1 is subjected to glue release and film inversion, and then removedAttaching a UV film with an iron ring on the reverse side of the coated surface of the substrate 1, and attaching a UV film with an iron ring on the coated surface of the substrate 1, wherein the debonding energy can be set to 300MJ/CM2(ii) a Then, the other surface (debonding surface) of the substrate 1 is sputtered with a single layer of SiO2Coating a film, wherein the thickness of the film is 70-100nm, and preferably 90 nm; and (C) centrifugally cleaning the substrate 1, debonding the coated substrate 1 to remove the UV film attached to the surface, and placing the treated substrate 1 into a washing basket for later use.
(E) Is coated with SiO2Coating low-refractive index ink on the front surface and the back surface of the film substrate 1, wherein the ink is hollow SiO2The AR printing ink is coated on the surface of a substrate 1 to form a film layer with ultralow surface reflectivity, and then an optical filter with ultralow reflectivity is formed, wherein the printing ink is coated in a spin coating mode, a coating clamp is used for carrying out peripheral vacuum adsorption, the printing ink is dripped under the condition of high rotating speed, the time from dripping the printing ink to the substrate is controlled within 1s, the distance between the substrate and an automatic injector is controlled within 3-8 mm, the rotating speed is 5000-6000 rpm, the rotating time is 5s, the uniform coating of the printing ink layer can be ensured under the condition of high rotating speed, and the defects of radiation, color spots, stripes and the like are avoided2The ratio is increased, the refractive index of the ink is changed, the coating film is not broken well after film forming, and in order to prevent the phenomenon, methanol with the concentration of more than 99.8 percent is placed in the internal environment of the coating machine during coating, and the whole cavity environment is kept in a sealed state, so that the reaction speed of the ultra-low reflection ink is maintained, and the thickness of the coating layer is controlled better.
(E1) After the ultralow-reflection ink is coated, the product is placed in a dust-free oven for baking, a step-type heating mode is adopted for baking, specifically, the temperature of the oven is increased from 0 ℃ to 70-90 ℃ in 30min, the temperature is maintained at 70-90 ℃ for 30min, more preferably 80 ℃, and then the temperature is maintained at 0-80 ℃ for 30min, and the baking mode can improve the temperature of the hollow SiO2The bonding firmness with the coating layer is ensured, and nitrogen is filled into a dust-free oven in the baking process. In addition, when baking, a stainless steel sealing cover is covered above the product, and the substrate 1 is mainly made of synthetic resin, so that dust is easy to absorb when baking, and the product is easy to warp when a hot air is blown by an oven, and the phenomenon of film cracking is caused, so that the product needs to be placed in the sealing cover for baking, and the problems of product warping, dirt, film cracking and the like are avoided.
(E2) The product is attached to the UV film, and the main component of the ultralow-reflection ink is hollow SiO2When a UV film with strong viscosity is adopted, a viscous material can be transferred onto a product, so that the performance abnormity such as poor appearance, spectral characteristic change and the like is caused, the UV film with strong viscosity can stick printing ink, when the UV film with weak viscosity is selected, the phenomenon of water inflow around the product can occur during cutting of a cutter wheel, so that the poor watermark is caused, in order to solve the problem, the viscosity of the UV film is selected to be 2.8N/20mm, after the UV film is pasted on the product, the pasted product is placed in a 45 ℃ dust-free oven to be baked for 5min, so that a glue layer on the UV film is softened, the contact area between the product and the UV glue layer is increased, the periphery of the product is tightly pasted with the UV film, the viscosity of the UV film can be controlled within a certain range, the phenomena of viscous material residue on the UV film and product ink layer falling off can not occur, and.
(E3) Cutting the product by a cutter wheel in a cutting mode, cutting the product into small pieces, assembling a microscope base, assembling and selecting normal-temperature curing glue, wherein due to the large thermal expansion coefficient of the product, when the conventional single-component epoxy resin thermosetting glue is adopted, the problem of cracking is easily caused during reliability test (temperature impact is 85 +/-3 < - > -40 < - > +/-3 ℃, 30min conversion is performed once, 500 cycles) because the difference between the thermal expansion coefficients of the glue and the product is large, experiments prove that the problem of cracking of the product due to temperature impact can be solved by selecting the polyether resin or vulcanized silicone rubber normal-type normal-temperature curing glue, performing double-sided plasma cleaning on the product after assembly, wherein the power of the plasma cleaning process in the embodiment is 380-400W, the action time is 200-250 s, the cleanliness of the product can be improved by the plasma cleaning process, and viscous materials on the surface of the product and a UV contact surface can be removed, the bad phenomenon of the reflectivity lifting spectrum is avoided.
The conditions of shooting the lamp in a darkroom by adopting the infrared cut filter in the current market and the mobile phone camera module adopting the infrared cut filter in the embodiment under the same condition are respectively shown in fig. 7 and fig. 8 (color is not shown), so that the filter can effectively improve the glare/ghost phenomenon of the camera module.
Example 2
This example differs from example 1 in that: the manufacturing method comprises the steps that a substrate 1 with the refractive index of 1.45 is adopted, first film layers 2 with the optical film thickness of 70nm and the refractive index of 1.38 are arranged on two sides of the substrate 1, second film layers 3 with the optical film thickness of 80nm and the refractive index of 1.15 are arranged on one sides, far away from the substrate, of the first film layers, and the refractive indexes are refractive indexes with the reference wavelength of 550 nm. The substrate 1 is mainly made of silicone resin, specifically, the substrate 1 is a composite membrane mainly containing silicone resin material, and the composite membrane further contains phenylphosphonic acid, (4-bromophenyl) phosphonic acid, phosphate ester and copper (II) acetate-hydrate.
The first film layer 2 is made of MgF2The second film layer 3 is mainly made of hollow SiO2Made of hollow SiO2Has an average particle diameter of 50 nm. The average transmittance of the substrate 1 to light with the incident angle of 0 DEG and the wavelength of 350-395 nm is 2.5%, the transmittance of the substrate in a 350-380 nm band is less than or equal to 0.65%, the minimum transmittance in a 400-420 nm band is 32%, the minimum transmittance in a 425-565 nm band is 73%, the average transmittance is 86%, the transmittance in a 450-600 nm band is more than or equal to 81%, the average transmittance in a 700-725 nm band is 2.3%, the transmittance in a 755-1000 nm band is less than or equal to 0.15%, the average transmittance in a 725-1100 nm band is 0.35%, the maximum transmittance is 1.3%, the average transmittance in a 900-1000 nm band is 0.07%, the maximum transmittance is 0.18%, and the center wavelength at the transmittance of 50% is 415nm and 645 nm. The reflectivity of the first film layer and the second film layer to the light with the incident angle of 0 degree and the wavelength of 400 nm-700 nm is less than or equal to 0.5 percent, the average reflectivity is 0.20 percent, and the wave band at the lowest point of the curve is 510 nm.
The infrared cut filter of the embodiment has an average transmittance of 90% in a wavelength band of 430 to 600nm, a minimum value of 80%, a transmittance of 0.15% or less in a wavelength band of 750 to 800nm, an average transmittance of 0.1% or less in a wavelength band of 750 to 1000nm, and center wavelengths of 410nm and 640nm at a transmittance of 50%.
Example 3
The present embodiment differs from embodiment 1 in that a substrate 1 with a refractive index of 1.55 is used, first film layers 2 with an optical film thickness of 100nm and a refractive index of 1.50 are provided on both sides of the substrate 1, and second film layers 3 with an optical film thickness of 110nm and a refractive index of 1.23 are provided on the side of the first film layers away from the substrate. The substrate 1 is mainly made of silicone resin, specifically, the substrate 1 is a composite membrane containing a silicone resin material, and the composite membrane further contains components of phenylphosphonic acid, (4-bromophenyl) phosphonic acid, phosphate ester and copper (II) acetate-hydrate.
The first film layer 2 is made of SiO2The second film layer 3 is mainly made of hollow SiO2Made of hollow SiO2Has an average particle diameter of 50 nm. The average transmittance of the substrate 1 to light with the incident angle of 0 DEG and the wavelength of 350-395 nm is 2.8%, the transmittance of the substrate in a 350-380 nm band is less than or equal to 0.6%, the minimum transmittance in a 400-420 nm band is 30%, the minimum transmittance in a 425-565 nm band is 72%, the average transmittance is 85%, the transmittance in a 450-600 nm band is more than or equal to 82%, the average transmittance in a 700-725 nm band is 2.4%, the transmittance in a 755-1000 nm band is less than or equal to 0.2%, the average transmittance in a 725-1100 nm band is less than or equal to 0.4%, the maximum transmittance is 1.4%, the average transmittance in a 900-1000 nm band is 0.1%, the maximum transmittance is 0.15%, and the central wavelength at the transmittance of 50% is 412nm and 642 nm. The maximum reflectivity of the first film layer and the second film layer to the light with the incident angle of 0 degree and the wavelength of 400 nm-700 nm is 0.45 percent, the average reflectivity is 0.16 percent, and the wave band at the lowest point of the curve is 510 nm.
The infrared cut filter of the present embodiment has an average transmittance of 88% in a wavelength band of 430 to 600nm, a minimum value of 81%, a transmittance of 0.15% or less in a wavelength band of 750 to 800nm, an average transmittance of 0.11% in a wavelength band of 750 to 1000nm, and center wavelengths of 413nm and 642nm at a transmittance of 50%.
Claims (10)
1. An infrared cut filter for improving a phenomenon of glare ghost, comprising: the optical film comprises a substrate with a refractive index of 1.45-1.55, wherein first film layers with the optical film thickness of 70-100nm and the refractive index of 1.38-1.50 are arranged on two sides of the substrate, a second film layer with the optical film thickness of 80-110 nm and the refractive index of 1.15-1.23 is arranged on one side, far away from the substrate, of the first film layer, and the refractive indexes are refractive indexes with the reference wavelength of 550 nm; the substrate has the average transmittance of less than or equal to 3% for light with the incident angle of 0 DEG and the wavelength of 350-395 nm, the minimum transmittance of more than or equal to 70% in a band of 425-565 nm, the average transmittance of more than or equal to 84%, the average transmittance of less than or equal to 2.5% in a band of 700-725 nm, the average transmittance of less than or equal to 0.5% in a band of 725-1100 nm, the maximum transmittance of less than or equal to 1.5%, and the central wavelength of 410 +/-5 nm or/and 640 +/-5 nm at the position where the transmittance is 50%.
2. The infrared cut filter for improving the phenomenon of glare ghost according to claim 1, wherein the substrate is mainly prepared from a silicon element-containing resin material.
3. The infrared cut filter for improving the phenomenon of glare ghosting according to claim 1 or 2, wherein: the substrate is mainly prepared from raw materials containing silicone resin.
4. The infrared cut filter for improving the phenomenon of glare ghosting of claim 1, wherein the first film layer consists essentially of an oxide containing silicon or a compound containing magnesium, and the second film layer consists essentially of hollow fine particles containing Si.
5. The infrared cut filter for improving the phenomenon of glare ghosting according to claim 1 or 4, wherein: the first film layer is SiO2Or MgF2The second film layer is mainly hollow SiO2。
6. The infrared cut filter for improving the phenomenon of glare ghost according to claim 4, wherein the hollow fine particles containing Si have an average particle size of 50 nm.
7. The infrared cut filter for improving the phenomenon of glare ghosting of claim 1, wherein: the reflectivity of the first film layer and the second film layer to the light with the incident angle of 0 degree and the wavelength of 400 nm-700 nm is less than or equal to 0.6 percent, the average reflectivity is less than or equal to 0.21 percent, and the wave band at the lowest point of the curve is 500 +/-10 nm.
8. The method of manufacturing an infrared cut filter for improving a phenomenon of glare ghost according to claim 1, wherein: the method comprises the following preparation steps:
1) carrying out ultrasonic cleaning on the substrate, and centrifugally drying;
2) plating a first film layer on one side of the substrate in a sputtering mode, and centrifugally cleaning;
3) plating a first film layer on the other side of the substrate in a sputtering mode, and centrifugally cleaning;
4) vacuum adsorption is carried out on the periphery, the base material coated with the first film layer is placed on a coating table, AR ink with low refractive index is dripped on the surface of the first film layer of the base material under the condition of high-speed rotation, coating is carried out to form a second film layer, the base plate is turned over after one surface is coated, and the second film layer is formed on the other surface after the other surface is coated;
5) after finishing coating the double-sided AR ink, baking in vacuum;
6) pasting a UV film, and baking in a vacuum oven;
7) and cutting the cutter wheel into finished products.
9. The method of claim 8, wherein the AR ink has a vacuum baking temperature of 70-90 ℃ and the UV film has a vacuum baking temperature of 45 ℃.
10. The method of manufacturing an infrared cut filter for improving a phenomenon of glare ghost according to claim 8, wherein: and the vacuum adsorption in the step 4) is to suck the edge of the substrate in a suction hole groove arranged on the coating table for fixing.
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