CN111809152A - Indium tin alloy target material and preparation method thereof - Google Patents
Indium tin alloy target material and preparation method thereof Download PDFInfo
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- CN111809152A CN111809152A CN202010540058.0A CN202010540058A CN111809152A CN 111809152 A CN111809152 A CN 111809152A CN 202010540058 A CN202010540058 A CN 202010540058A CN 111809152 A CN111809152 A CN 111809152A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21B—ROLLING OF METAL
- B21B1/00—Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations
- B21B1/46—Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations for rolling metal immediately subsequent to continuous casting
- B21B1/463—Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations for rolling metal immediately subsequent to continuous casting in a continuous process, i.e. the cast not being cut before rolling
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21B—ROLLING OF METAL
- B21B37/00—Control devices or methods specially adapted for metal-rolling mills or the work produced thereby
- B21B37/16—Control of thickness, width, diameter or other transverse dimensions
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22C—FOUNDRY MOULDING
- B22C3/00—Selection of compositions for coating the surfaces of moulds, cores, or patterns
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C13/00—Alloys based on tin
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21B—ROLLING OF METAL
- B21B2261/00—Product parameters
- B21B2261/02—Transverse dimensions
- B21B2261/04—Thickness, gauge
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Abstract
The invention discloses a preparation method of an indium tin alloy target, which comprises the following steps: putting metal indium and metal tin into a crucible, heating and melting, and stirring until the components of the melt are uniform; casting and molding the melt to obtain an indium tin alloy cast ingot; rolling the indium-tin alloy cast ingot to obtain an indium-tin alloy blank; processing an indium tin alloy blank to a coarse target blank with the thickness larger than the target size, and processing the binding surface of the coarse target blank to be smooth; and respectively heating the matched back plate and the coarse target blank at a temperature lower than the critical melting point of the coarse target blank, preserving heat, then laminating and clamping the back plate and the coarse target blank, gradually cooling to room temperature, and processing the coarse target blank to a target size after the bonding is qualified. The invention can realize the rapid batch production of the indium tin target material, no molten medium exists between the target blank and the back plate, the target blank has high purity, the grain size is uniform and the granularity is smaller, the average granularity is 100-150 mu m, the component uniformity is good, the deviation of the indium tin component is less than +/-0.5%, and the sputtering effect is good.
Description
Technical Field
The invention belongs to the technical field of thin film materials, and particularly relates to an indium tin alloy target material and a preparation method thereof.
Background
With the development of communication technology, 5G communication has started to be widely used. The 5G signal has the remarkable characteristic that the signal transmission speed is higher, the transmission speed is 10-100 times of that of 4G, and the life of people is greatly facilitated.
The 5G communication adopts a frequency spectrum above 3Ghz, the wavelength of millimeter waves is very short, and in order to reduce the attenuation in the processes of signal receiving and transmitting, the shell of the mobile phone is generally made of glass or engineering plastics. However, consumers prefer metallic luster, so that for high-end mobile phones, manufacturers can apply a magnetron sputtering technology to plate a 1-10 micron film on the mobile phone shell, so that not only can the mobile phone shell be endowed with a metallic luster feeling, but also the total weight of the mobile phone can be effectively reduced, and the signal attenuation of the mobile phone can be effectively reduced.
The indium tin alloy target material belongs to one kind of low melting point alloy target material and is the material used in the magnetron sputtering process. The method for preparing the indium tin alloy target material in the prior art comprises the following steps: the indium tin alloy melt was cast directly onto the copper backing plate. However, this method forms an indium tin copper alloy during casting, and copper in the backing plate may infiltrate into the target as an impurity, adversely affecting the performance of the sputtered film.
Disclosure of Invention
In order to solve the defects and shortcomings in the prior art, the invention aims to provide an indium tin alloy target material and a preparation method thereof. The indium tin alloy target material prepared by the invention has the advantages of higher purity, component uniformity and grain size uniformity, smaller grain size, average grain size of 100-150 mu m, good sputtering effect and lower preparation cost.
In order to realize the purpose, the technical scheme adopted by the invention is as follows:
a preparation method of an indium tin alloy target material comprises the following steps:
(1) putting metal indium and metal tin into a crucible, heating and melting, and stirring until the components of the melt are uniform;
(2) casting and molding the melt obtained in the step (1) to obtain an indium tin alloy ingot;
(3) rolling the indium tin alloy ingot obtained in the step (2) to obtain an indium tin alloy blank;
(4) processing the indium tin alloy blank obtained in the step (3) into a coarse target blank with the thickness larger than the target size, and processing the binding surface of the coarse target blank to be smooth;
(5) and (4) respectively heating the back plate and the coarse target blank obtained in the step (4) at a temperature lower than the critical melting point of the coarse target blank, preserving heat, then pressurizing to enable the back plate and the coarse target blank to be attached and clamped, gradually cooling to the room temperature, and processing the coarse target blank after the bonding is qualified to enable the size of the coarse target blank to reach the target size.
Preferably, in the step (1), the crucible is a stainless steel crucible, and the ratio of the opening diameter to the height of the stainless steel crucible is 0.5-0.635. The stainless steel crucible of the specification is beneficial to fully stirring the melt, can effectively reduce the residual amount of materials in the crucible and improve the proportion of the cast melt.
Preferably, in the step (1), the melting temperature is 150-250 ℃. More preferably, the temperature of the melting is 185 ℃.
Preferably, in the step (1), the mass ratio of the metal indium to the metal tin is 1-99: 1-99. More preferably, in the step (1), the mass ratio of the metal indium to the metal tin is (10-40): (60-90). More preferably, in the step (1), the mass ratio of the metallic indium to the metallic tin is 20:80 or 30: 70.
Preferably, in the step (1), the purities of the metal indium and the metal tin are respectively more than or equal to 99.95%, preferably more than 4N, the metal indium is an indium ingot, and the metal tin is a tin ingot. The metal indium raw material and the metal tin raw material adopted by the invention both need to meet the Rohs2.0 environmental protection requirement.
Preferably, in the step (2), the casting process is as follows: injecting the melt into a square mold with the inner wall coated with a demolding aid, and cooling and molding; the thickness of the indium-tin alloy ingot is 40-60 mm. Preferably, the square die is made of stainless steel or graphite.
Preferably, the demolding aid is a boron nitride demolding agent, and the boron nitride demolding aid is coated on a square mold heated at the temperature of 80-85 ℃ in a spraying mode. In this way, the release agent coating can be dried quickly.
On one hand, the boron nitride release agent is sprayed on the mold, so that a layer of boron nitride is arranged between the prepared cast ingot and the mold, the boron nitride plays an isolation role, particularly when the mold is graphite, the cast ingot can be prevented from being in direct contact with the mold, and the introduction of carbon impurities is reduced. On the other hand, the square die is heated at the temperature of 80-85 ℃, and then the boron nitride release agent is sprayed, so that the coating is quickly dried, namely, the die is pre-dried, and the moisture content of the die is low. Under the combined action of the two aspects, the ingot prepared by the invention has good shape and no surface defect. In addition, because of the casting process, the ingot is rapidly cooled, the uniformity of the indium tin component can be effectively ensured, the segregation can not occur, and the nonuniformity of the alloy component is ensured to be less than +/-0.5%.
Preferably, in the step (3), the rolling conditions are as follows: the thickness deformation amount of the alloy is not less than 20%, more preferably 20% to 65%, and most preferably 20%. The step can effectively refine coarse grains with the grain size of more than 500 mu m in the alloy to be less than 200 mu m, so that the average grain size of the alloy is in the range of 100-150 mu m, and the phenomenon that the film performance is inconsistent due to uneven grains in the sputtering process is prevented. When the thickness deformation of the alloy is 20%, the effect can be achieved, and the cost is low.
Preferably, in the step (4), the thickness of the coarse target blank is 1-2 mm larger than the target size.
Preferably, in the step (4), the roughness of the binding surface of the rough target blank is less than Ra1.6 μm.
Preferably, in the step (4), the machining mode is machining. Oily cooling liquid can be used in the machining process to further increase the machining effect of the alloy blank and improve the machining efficiency. After the rough target blank is processed, the oil stain can be removed by properly using a cleaning agent.
Preferably, in the step (5), the back plate and the coarse target blank obtained in the step (4) are respectively heated to 80-150 ℃, preferably 120 ℃, and are kept warm for 10-30 min, and then 1-8 kg/cm is used2The back plate and the rough target blank are attached and clamped by the clamping force, and the back plate and the rough target blank are gradually cooled to room temperature within 1-2 hours. The cooling is finished within 1-2 h, so that the binding rate is qualified, and the crystal grains of the indium-tin alloy are uniform. Too short a cooling time may result in too low a binding rate, while too long a cooling time may result in re-growth of grains inside the ito ingot, increasing grain non-uniformity. Preferably, the back plate is a copper back plate.
Preferably, in the step (5), the binding qualification criteria are: the binding rate is more than 95%, and the single point is not more than 1%. It should be understood by those skilled in the art that the binding rate in the present invention is the area ratio of the indium tin target blank to the copper backing plate.
Since the sputtering rates of the two elements are not uniform when the alloy is formed from indium and tin, the properties of the sputtered film are not uniform if the composition of the alloy target is not uniform. Meanwhile, the uneven grain size of the alloy also affects the sputtering rate of each local area, thereby causing the uneven film thickness of the thin film. The preparation method of the invention can effectively overcome the problems and ensure the purity, the component uniformity and the uniformity of the sputtering film of the target material.
The traditional target material is generally bound by indium, but the melting point of the indium tin target material provided by the invention is close to the melting point of indium, so that the indium can not be bound, otherwise, the indium tin can be melted by heat generated during binding, and the indium tin is scrapped. In this regard, the present invention innovatively implements inter-atomic diffusion bonding by applying pressure and heat at a temperature lower than the critical melting point of the indium tin target blank at an appropriate pressure. The binding method of the invention has low cost and high binding rate.
Compared with the prior art, the invention has the beneficial effects that: the preparation method can realize the rapid batch production of the indium tin target material, no molten medium exists between the target blank and the copper back plate, the purity of the target blank is high, and the influence of impurities formed by the infiltration of copper element into the indium tin target blank on sputtering can be avoided. The indium tin target blank prepared by the method has the advantages of uniform grain size, small granularity, average granularity of 100-150 mu m, good component uniformity, indium tin component deviation of less than +/-0.5 percent and good sputtering effect.
Drawings
FIG. 1 is a schematic structural diagram of an indium tin alloy target according to the present invention in a bonded state;
FIG. 2 is a microstructure photograph of the ITO target prepared in example 1;
fig. 3 is a microstructure photograph of the indium tin alloy target prepared in example 2.
Detailed Description
To better illustrate the objects, aspects and advantages of the present invention, the present invention is further illustrated by the following examples. It is apparent that the following examples are only a part of the embodiments of the present invention, and not all of them. It should be understood that the embodiments of the present invention are only for illustrating the technical effects of the present invention, and are not intended to limit the scope of the present invention.
Example 1
An indium tin alloy target material with the specification of 1600mm multiplied by 200mm multiplied by 10mm, and the preparation method comprises the following steps:
(1) according to indium ingot: putting indium ingots and tin ingots with the purity of 4N into a stainless steel crucible with the opening diameter-height ratio of 0.5 according to the mass ratio of 4:1, heating and melting at 185 ℃, and stirring by using an electromagnetic stirrer for more than 5min until the melt components are uniform;
(2) heating a stainless steel square mould at 80 ℃ (80-85 ℃), then uniformly spraying a boron nitride release agent on the inner wall of the square mould, injecting the melt obtained in the step (1) into the square mould, cooling, forming and demoulding to obtain an indium-tin alloy ingot with the thickness of 42 mm;
(3) rolling the indium-tin alloy ingot obtained in the step (2) by using a 150-ton cold-hot reversible rolling mill until the thickness deformation is 20% to obtain an indium-tin alloy blank;
(4) processing the indium tin alloy blank obtained in the step (3) into a coarse target blank with the thickness of 1mm larger than the target size by a machining mode, ensuring that a plane of the coarse target blank is absolutely smooth, and taking the smooth plane as a binding plane, wherein the roughness of the smooth plane is less than Ra1.6 mu m;
(5) as shown in figure 1, heating the matched copper back plate and the rough target blank obtained in the step (4) to 120 ℃, preserving heat for 10min, clamping the binding surface of the copper back plate and the binding surface of the rough target blank by using an adaptive aluminum alloy clamp, and then using 4kg/cm2The copper back plate and the rough target blank are tightly attached and clamped by the clamping force, the blank is gradually cooled to the room temperature within 1.5h, the binding effect is measured by using a water immersion type ultrasonic detector, the binding rate is 98.5%, the single point is not more than 1%, the binding is qualified, and then the surplus reserved on the rough target blank is removed by selecting machining to enable the surplus to reach the target size, so that the indium-tin alloy target material is obtained.
Example 2
An indium tin alloy target material with the specification of 1600mm multiplied by 200mm multiplied by 10mm, and the preparation method comprises the following steps:
(1) according to indium ingot: putting indium ingots and tin ingots with the purity of 4N into a stainless steel crucible with the opening diameter-height ratio of 0.5 according to the mass ratio of 4:1, heating and melting at 150 ℃, and stirring by using an electromagnetic stirrer for more than 5min until the melt components are uniform;
(2) heating a square mould made of stainless steel at 80 ℃, then uniformly spraying a boron nitride release agent on the inner wall of the square mould, injecting the melt obtained in the step (1) into the square mould, cooling, forming and demoulding to obtain an indium-tin alloy ingot with the thickness of 42 mm;
(3) rolling the indium-tin alloy ingot obtained in the step (2) by using a 150-ton cold-hot reversible rolling mill until the thickness deformation is 20% to obtain an indium-tin alloy blank;
(4) processing the indium tin alloy blank obtained in the step (3) into a coarse target blank with the thickness of 1mm larger than the target size by a machining mode, ensuring that a plane of the coarse target blank is absolutely smooth, and taking the smooth plane as a binding plane, wherein the roughness of the smooth plane is less than Ra1.6 mu m;
(5) respectively heating the matched copper back plate and the coarse target blank obtained in the step (4) to 80 ℃, preserving heat for 30min, clamping the binding surface of the copper back plate and the binding surface of the coarse target blank by using an adaptive aluminum alloy clamp, and then using 8kg/cm2The clamping force is used for attaching and clamping the copper back plate and the rough target blank, the copper back plate and the rough target blank are gradually cooled to room temperature within 1h, and a water immersion type ultrasonic detector is used for measuringAnd (3) binding effect, wherein the binding rate is 96.8%, the single point is not more than 1%, the binding is qualified, and then, machining is selected to remove the reserved redundant part on the rough target blank to enable the redundant part to reach the target size, so that the indium-tin alloy target material is obtained.
Example 3
An indium tin alloy target material with the specification of 1600mm multiplied by 200mm multiplied by 10mm, and the preparation method comprises the following steps:
(1) according to indium ingot: putting indium ingots and tin ingots with the purity of 4N into a stainless steel crucible with the ratio of opening diameter to height of 0.5 according to the mass ratio of 4:1, heating and melting at 250 ℃, and stirring by using an electromagnetic stirrer for more than 5min until the melt components are uniform;
(2) heating a square mould made of stainless steel at 80 ℃, then uniformly spraying a boron nitride release agent on the inner wall of the square mould, injecting the melt obtained in the step (1) into the square mould, cooling, forming and demoulding to obtain an indium-tin alloy ingot with the thickness of 42 mm;
(3) rolling the indium-tin alloy ingot obtained in the step (2) by using a 150-ton cold-hot reversible rolling mill until the thickness deformation is 20% to obtain an indium-tin alloy blank;
(4) processing the indium tin alloy blank obtained in the step (3) into a coarse target blank with the thickness of 1mm larger than the target size by a machining mode, ensuring that a plane of the coarse target blank is absolutely smooth, and taking the smooth plane as a binding plane, wherein the roughness of the smooth plane is less than Ra1.6 mu m;
(5) respectively heating the matched copper back plate and the coarse target blank obtained in the step (4) to 150 ℃, preserving heat for 10min, clamping the binding surface of the copper back plate and the binding surface of the coarse target blank by using an adaptive aluminum alloy clamp, and then using 1kg/cm2The copper back plate and the rough target blank are tightly attached and clamped by the clamping force, the blank is gradually cooled to the room temperature within 2 hours, the binding effect is measured by using a water immersion type ultrasonic detector, the binding rate is 98.3 percent, the single point is not more than 1 percent, the binding is qualified, and then the surplus reserved on the rough target blank is removed by selecting machining to enable the surplus to reach the target size, so that the indium-tin alloy target material is obtained.
The grain size of the indium tin alloy target material prepared in examples 1 to 3 was measured according to the current method, and the average grain size was calculated. The results show that the indium tin alloy targets prepared in examples 1 to 3 have small crystal grains of almost 200 μm or less, good uniformity of crystal grain size, and average grain size of 100 to 150 μm. Fig. 2 and fig. 3 are photographs showing the grain sizes of the indium tin alloy targets of examples 1 and 2, respectively.
Comparative example 1
Comparative example 1 provides an indium tin alloy target material having the same specifications as example 3, and a preparation method similar to example 3, except that: comparative example 1 in preparing an indium tin alloy billet, an indium tin alloy ingot was rolled to a thickness deformation amount of 15%.
The grain size of the indium tin alloy target material prepared in comparative example 1 was measured according to the current method, and the average grain size was calculated. The result shows that the indium tin alloy target material has more crystal grains with the grain size of more than 200 μm, the uniformity is poor, and the average grain size is 173 μm.
Therefore, the rolling thickness deformation amount in the technical scheme of the invention is a key factor for controlling the size and uniformity of the target crystal grains. When the thickness deformation amount in the rolling process is controlled to be more than 20%, coarse grains can be effectively refined to be less than 200 mu m, and the average grain size of the alloy is in the range of 100-150 mu m.
Comparative example 2
Comparative example 2 provides an indium tin alloy target material having the same specifications as example 3, and a preparation method similar to example 3 except that: before binding, the backing plate and the coarse target blank are respectively heated to 70 ℃, and the temperature is preserved for 40min, and then binding is carried out according to the method of the embodiment 3. And finally, measuring the binding effect by using a water-immersed ultrasonic detector, wherein the binding rate is 90.2 percent, the single point is 1.8 percent, and the binding is unqualified.
Therefore, the heating temperature before binding in the technical scheme of the invention can obviously influence the binding effect of the indium tin alloy target material.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting the protection scope of the present invention, and although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Claims (10)
1. The preparation method of the indium tin alloy target is characterized by comprising the following steps:
(1) putting metal indium and metal tin into a crucible, heating and melting, and stirring until the components of the melt are uniform;
(2) casting and molding the melt obtained in the step (1) to obtain an indium tin alloy ingot;
(3) rolling the indium tin alloy ingot obtained in the step (2) to obtain an indium tin alloy blank;
(4) processing the indium tin alloy blank obtained in the step (3) into a coarse target blank with the thickness larger than the target size, and processing the binding surface of the coarse target blank to be smooth;
(5) and (4) respectively heating the back plate and the coarse target blank obtained in the step (4) at a temperature lower than the critical melting point of the coarse target blank, preserving heat, then pressurizing to enable the back plate and the coarse target blank to be attached and clamped, gradually cooling to the room temperature, and processing the coarse target blank after the bonding is qualified to enable the size of the coarse target blank to reach the target size.
2. The method for preparing the indium tin alloy target material according to claim 1, wherein in the step (1), the melting temperature is 150-250 ℃.
3. The method for preparing an indium tin alloy target according to claim 1, wherein in the step (1), the crucible is a stainless steel crucible, and the ratio of the opening diameter to the height of the stainless steel crucible is 0.5-0.635.
4. The method for preparing the indium-tin alloy target material according to claim 1, wherein in the step (1), the purities of the metal indium and the metal tin are respectively more than or equal to 99.95%.
5. The method for preparing the indium tin alloy target material according to claim 1, wherein in the step (2), the casting process comprises the following steps: injecting the melt into a square mold with the inner wall coated with a demolding aid, and cooling and forming to obtain an indium-tin alloy ingot; preferably, the thickness of the indium tin alloy ingot is 40-60 mm; preferably, the demolding aid is a boron nitride demolding agent, and the boron nitride demolding aid is coated on a square mold heated at the temperature of 80-85 ℃ in a spraying mode.
6. The method for preparing the indium tin alloy target material according to claim 1, wherein in the step (3), the rolling conditions are as follows: the thickness deformation of the alloy is more than or equal to 20 percent.
7. The method for preparing an indium tin alloy target material according to claim 1, wherein in the step (4), the rough target blank is 1-2 mm thicker than the target size, and the roughness of the binding surface of the rough target blank is less than Ra1.6 μm.
8. The preparation method of the indium tin alloy target material according to claim 1, wherein in the step (5), the back plate and the coarse target blank obtained in the step (4) are respectively heated to 80-150 ℃, and the temperature is kept for 10-30 min, and then 1-8 kg/cm is used2The back plate and the rough target blank are attached and clamped by the clamping force, and the back plate and the rough target blank are gradually cooled to room temperature within 1-2 hours.
9. The method for preparing the indium tin alloy target material according to claim 1, wherein in the step (5), the binding qualification criteria are: the binding rate is more than 95%, and the single point is not more than 1%.
10. An indium tin alloy target material, which is prepared by the preparation method of the indium tin alloy target material according to any one of claims 1 to 9.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113042745A (en) * | 2021-03-12 | 2021-06-29 | 昆明理工大学 | Method for preparing nano indium tin alloy powder by wet chemical method |
| CN114592173A (en) * | 2022-01-11 | 2022-06-07 | 先导薄膜材料有限公司 | CdIn alloy target material and preparation method thereof |
| CN115198239A (en) * | 2022-07-29 | 2022-10-18 | 云南锡业集团（控股）有限责任公司研发中心 | Plastic deformation processing and heat treatment method of tin-indium alloy target material |
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| CN113042745A (en) * | 2021-03-12 | 2021-06-29 | 昆明理工大学 | Method for preparing nano indium tin alloy powder by wet chemical method |
| CN114592173A (en) * | 2022-01-11 | 2022-06-07 | 先导薄膜材料有限公司 | CdIn alloy target material and preparation method thereof |
| CN114592173B (en) * | 2022-01-11 | 2023-09-29 | 先导薄膜材料(安徽)有限公司 | CdIn alloy target and preparation method thereof |
| CN115198239A (en) * | 2022-07-29 | 2022-10-18 | 云南锡业集团（控股）有限责任公司研发中心 | Plastic deformation processing and heat treatment method of tin-indium alloy target material |
| CN115198239B (en) * | 2022-07-29 | 2023-12-12 | 云南锡业集团（控股）有限责任公司研发中心 | Plastic deformation processing and heat treatment method for tin-indium alloy target |
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