CN1118069C - Semiconductor nonvolatile memory device - Google Patents
Semiconductor nonvolatile memory device Download PDFInfo
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- CN1118069C CN1118069C CN98116144A CN98116144A CN1118069C CN 1118069 C CN1118069 C CN 1118069C CN 98116144 A CN98116144 A CN 98116144A CN 98116144 A CN98116144 A CN 98116144A CN 1118069 C CN1118069 C CN 1118069C
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
- G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
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Abstract
A semiconductor nonvolatile memory device in which the states of memory cells are determined with respect to each of all data lines in a nonvolatile memory device so as to perform control such as continuation and suspension of programming automatically. The memory device is provided with a memory cell array in which nonvolatile semiconductor memory cells are arranged in an array state, word lines and data lines connected to plural memory cell groups in common, wherein each data line has a sense amplifier circuit. The memory device further includes common data lines connected to each sense amplifier circuit. Each memory cell is provided between the first sense amplifier and the second sense amplifier, and provided between the first common data line and the second common data line.
Description
The present invention be that 94 on June 1,, application number are 94106214.7 the applying date, denomination of invention divides an application for the application for a patent for invention of " semiconductor nonvolatile memory device ".
The present invention relates to a kind of electric erasable and programmable semiconductor memory spare, the program verification of the wherein continuation of program, time-out and programming again can obtain detecting in memory device and control automatically, operates and make the miniaturization of device own thereby might carry out programming operation and program verification at high speed again.
Propose at VLSI circuit Conference Papers in 1992 the 20-21 page or leaf of making a summary so far with the structure of programmed circuit again of the programmable read-only memory system of non-formula electric erasable, it as a kind of data to a plurality of Nonvolatile semiconductor memory devices (storage unit) control gate of being connected to same word line carry out simultaneously electricity again the method for programming propose.Figure 22,23 and 24 has explained above-mentioned conventional example.
Figure 22 shows the structure of programmed circuit more conventional and programmable read only memory non-formula electric erasable.Two door input ends of read/write circuit are connected to the data line BLai and the BLbi of different memory arrays by proof scheme.This read/write circuit is made up of trigger, plays differential reading circuit when program verification is operated, and play data-latching circuit when programming operation.
During a plurality of storage unit, the threshold voltage of each storage unit must be arranged in a certain predetermined positive voltage scope on data are packed word line simultaneously into.Like this, after carrying out programming operation, be the threshold voltage (verification operation) of each storage unit on the sense word line, thereby determine whether threshold voltage drops among the positive voltage scope of being scheduled to for the storage unit that all is programmed.When threshold voltage was outside this scope, programming operation repeated, and is in preset range until threshold voltage.
With the erasable programmable read only memory of non-formula in, the threshold voltage of storage unit can be low-voltage state (negative threshold voltage) by erase operation, also can be high-voltage state (positive threshold voltage) by programming operation.It is exactly that selected word line is added 18 volts of voltages, the data line (selected) corresponding to the storage unit that will programme is added 0 volt of voltage and the data line (non-selected) corresponding to the storage unit of not programming is added 8 volts of voltages that what is called is finished programming operation.In addition, the data of packing into remain in the latch of read/write circuit, and 8 volts used voltages of selected data line lean on terminal voltage Vrw with read/write circuit to be pressurized to 8 volts to obtain.
After finishing above-mentioned programming, utilize proof scheme to carry out program verification.A signal Synchronization oscillogram when Figure 23 shows the program verification operation.When unit on selected memory cell array (a) limit, bit line BLai voltage is pre-charged to voltage Va=(3/5) Vcc, promptly 1.8 volts by Φ pa.On the other hand, the voltage of the room line of bit line BLbi (dummybit lines) is pre-charged to Vb=(1/2) Vcc, i.e. 1.5 volts (t1 is to t2) by Φ pb.
After the bit-line pre-charge, the voltage of selected word line (CG) is reduced to 0.6 volt of program verification voltage, and Vcc is added on not selected word line (CG).If the threshold voltage of chosen storage unit is in 0.6 volt or lower, in chosen storage unit, just have electric current to flow through, and bit-line voltage is 1.5 volts or lower.On the other hand, when the threshold voltage of storage unit is higher than 0.6 volt, just do not have electric current, and bit-line voltage maintains 1.8 volts pre-charge voltage (t2 is to t3).
All word lines (CG) all become not after the selected state, and proof scheme signal Phi av is state of activation (Vcc).When the latch data of read/write circuit was " 1 " (magnitude of voltage is OV), MOS transistor T1 turn-offed, and the voltage of bit line BLai remains on Φ av becomes state of activation level before.On the other hand, when latch data is " 0 " (magnitude of voltage is Vcc), MOS transistor T1 conducting, the voltage of bit line BLai is 1.5 volts or higher (t3 is to t4).
When proof scheme signal Phi av step-down (Vss), read/write circuit enters equilibrium state (Φ p height, Φ n is low, Φ e height), after this owing to the activation of proof scheme signal Phi a and Φ b plays data holding circuit (t4 and after).
The voltage of bit line BLai is read by the open form bit line structure, and (program verification) data of reading after its programming are programmed for the latch data of read/write circuit again.Figure 24 has provided programming data, the relation between programming data and the memory cell data again.
For preventing the storage unit overprogram, the threshold voltage that is added with " 1 " (latch data voltage is OV) programming and storage unit when a certain storage unit reaches 0.6 volt or when higher in the program verification operation, should make latch data voltage is Vcc, i.e. " 0 " programming.
In aforementioned prior art, each of the sector of programming has again all been carried out programming and program tested control.Yet, owing to do not survey and determine whether all chosen each positions that will programme have finished programming, thereby the termination with program verification of can't determining to programme.Therefore, set the enough programming time with providing timer for oneself in the prior art, and in the programming time of setting, programming operation and program verification operation has been repeated.This just requires the programming time required with respect to storage unit that data are packed into, set an overprogram time that comprises surplus.
And, the detection that programming is ended and determine operation be by be positioned at outside the semiconductor nonvolatile memory device system (for example, automatic the take pictures portable system of system and so on, portable code translator and the pocket computer controlled) CPU in carries out, this just require semiconductor nonvolatile memory device and system can bus to keep interconnecting always so that the memory cell data in the semiconductor non-volatile memory is transferred to CP.So following problems occurs, promptly in the data of packing into, CPU is occupied by the programming Control again of semiconductor nonvolatile memory device.
First purpose of the present invention is to address the above problem and provide a kind of can carry out the semiconductor storage unit that electricity is programmed and wiped to zone field, can keep semiconductor storage unit to separate with the bus between the system again simultaneously.
Moreover, above-mentioned prior art only under the following situation just effectively: (1) programming operation finish wipe after, drain line that the threshold voltage of storage unit optionally enters the selected programming in high-voltage state and (2) from low-voltage state is added with 0 volt voltage and the thread cast-off utmost point selected is added with positive voltage, shown in a among Figure 19.Yet, when (1) programming operation finish wipe after, the threshold voltage of storage unit optionally enters low-voltage state from high-voltage state, and the drain line of selected programming of (2) when programming is added with positive voltage and selected drain line when being added with 0 volt voltage (shown in Figure 19 b), the continuation and the termination of then can not the control store unit programming.
Its reason is explained with reference to Figure 20.Figure 20 has drawn in programming and program verification process, the state of storage unit on the word line.
The threshold voltage of supposing to be connected in the storage unit of data line b1 and b2 is that the threshold voltage of the high-voltage state storage unit that is connected in data line b3 and b4 is a low-voltage state.Hope is shown the data of initially packing into those data of its respective memory unit of packing into.Have high threshold voltage owing to be connected in the storage unit of data line b2 now, therefore require further overprogram.Because the storage unit of data line b4 has low threshold voltage, Zhi Hou programming operation is just ended next time.
In the verification system of routine, all data lines all by precharge and no matter the latch data of data holding circuit (being equivalent to read/write circuit shown in Figure 22) how.So when reading voltage and be added on the word line, the data line b3 of low threshold voltage storage unit and b4 voltage become 0 volt.Because the latch data of data holding circuit adopts this data line state to be reloaded into, make the data line charging according to latch data afterwards, therefore, the data line b1 of data line b2 and b4 and maintenance pre-charge pressure is owing to the data of initially packing into of data holding circuit are 3 volts.So, reinstall data and just and wish to end again line program b4 and wish that initially pack into the data of data 0 hint b1 of maintenance are different.That is, conventional verification system can not be used for the storage system shown in Figure 19 b.
Second purpose of the present invention is each data line to be determined the continuation and the termination of its programming and program verification process, and determine the following fact: when the programmed threshold voltage that makes semiconductor non-volatile memory element (storage unit) by programming operation optionally the high-voltage state after wipe enter low-voltage state, and selected drain line is positive voltage and selected drain line when being 0 volt voltage when programming, the programming that becomes all storage unit of the target of programming has all just been finished in semiconductor nonvolatile memory device inside.
For achieving the above object, the invention provides a kind of semiconductor storage unit, comprise first data line; Second data line that be arranged in parallel with described first data line; Many word lines that all intersect with described first and second data lines; Be arranged on a plurality of storage unit on the required point of crossing of described first data line, second data line and described many word lines; Be connected to first pre-charge circuit of described first data line; Be connected to second pre-charge circuit of described second data line; Input end is connected to first sensor amplifier and second sensor amplifier of described first data line and second data line; Be connected to first common data line of the described first sensor amplifier output terminal; Be connected to described second second common data line of reading amplifier out; Be arranged on the output terminal of described first sensor amplifier and first state detection circuit between described first common data line; And be arranged on the output terminal of described second sensor amplifier and second state detection circuit between described second common data line; Wherein, described a plurality of storage unit be arranged between described first pre-charge circuit and second pre-charge circuit, between described first sensor amplifier and described second sensor amplifier and between described first common data line and described second common data line.
In addition, the present invention also provides a kind of semiconductor storage unit, comprises that a plurality of data lines are right; With the many piece word lines of described a plurality of data lines to intersecting; Be arranged on described a plurality of data line to the required point of crossing of described many word lines on a plurality of storage unit; Be connected to first pre-charge circuit of described data line to a data line of each corresponding centering; And second pre-charge circuit that is connected to described a plurality of each corresponding another data line of centering of data line centering; Be a plurality of first sensor amplifiers of described each corresponding data line of a plurality of data line centerings to being provided with; Be connected to first common data line of the output terminal of described a plurality of first sensor amplifiers; Be a plurality of second sensor amplifiers of described each corresponding data line of a plurality of data line centerings to being provided with; Be connected to second common data line of the output terminal of described a plurality of second sensor amplifiers, be arranged on first state detection circuit between described each corresponding one output terminal of a plurality of first sensor amplifier and described first common data line; And be arranged on second state detection circuit between described each corresponding one output terminal of a plurality of second sensor amplifier and described second common data line; Wherein, described a plurality of storage unit is arranged between described a plurality of first sensor amplifier and described a plurality of second sensor amplifier and between described first common data line and described second common data line.
In semiconductor nonvolatile memory device of the present invention, have at least a word line by row address decoder selected and positive voltage in addition, wipe thereby a plurality of storage unit that control gate is connected to this word line are carried out electricity simultaneously.And, after the data that are housed to storage unit are transferred to the data holding circuit that each data line provides, by row address decoder negative voltage is added to selected word line, and according to the data in the data holding circuit, voltage is added to data line, thereby carries out programming operation.That is, do as a wholely, can carry out electricity to section concentrated area and wipe and programme with above-mentioned word line.After the above-mentioned programming operation, by means of by pre-charge circuit according to the data in the data holding circuit optionally to the alive method of these data lines, simultaneously each storage unit in the section is carried out the operation (concentrating checking) that state is read, and after above-mentioned checking, with state detection circuit survey simultaneously with this section in data (state detection operation) in the corresponding data holding circuit of each storage unit.Programming operation, concentrate verification operation and state detection operation be performed until storage unit pack into finish till.
Fig. 1 is a block scheme of the present invention;
Fig. 2 is the circuit diagram of an embodiment of semiconductor nonvolatile memory device of the present invention;
Fig. 3 is the synoptic diagram of an explanation home address buffer circuits example of the present invention;
The figure of practical circuit takes place in Fig. 4 automatically for an explanation home address of the present invention;
Fig. 5 shows the synoptic diagram of an input-output buffer practical circuit of the present invention;
Fig. 6 is of the present invention first block scheme of programmed circuit again;
Fig. 7 shows programming of the present invention and program verification operation timing waveform;
Fig. 8 shows read operation sync waveform of the present invention;
Fig. 9 shows the timing waveform of operating with erase verification of wiping of the present invention;
Figure 10 is the present invention second block scheme of programmed circuit again;
Figure 11 is the programmable read only memory block scheme of programmed circuit again of the present invention and non-formula electric erasable;
Figure 12 is the circuit diagram of second memory array of the present invention;
Figure 13 is the circuit diagram of the present invention's the 3rd memory array;
Figure 14 is the block scheme of the present invention's second base plate (mat);
Figure 15 is the block scheme of the present invention's the 3rd base plate;
Figure 16 is the block scheme of the present invention's the 4th base plate;
Figure 17 is the block scheme of the present invention's the 5th base plate;
Figure 18 is the block scheme of the present invention's the 6th base plate;
Figure 19 is programming operation and programming technique definition interpret table;
Figure 20 is the sketch that verification system is made an explanation with programming definition of the present invention;
Figure 21 is the sketch that pre-charge system is made an explanation with programming definition of the present invention;
Figure 22 is conventional and programmable read only memory non-formula electric erasable the block scheme of programmed circuit again;
Figure 23 shows timing waveform figure conventional and programmable read only memory non-formula electric erasable; And
Figure 24 is interpret tables conventional and the programmable read-only memory (EEPROM) cell data non-formula electric erasable and the data of packing into.
Fig. 1 shows the circuit block diagram of an embodiment of semiconductor nonvolatile memory device of the present invention.Non-volatile memory cells M1, M2, M4 and M5 are the non-volatile memory cells (the lightening storage unit of high speed) that the electricity simultaneously known is wiped.The control grid electrode of storage unit M1 and M4 is connected in word line W1, and the control grid electrode of storage unit M2 and M5 is connected in word line W2.Word line W1 and W2 are connected to line decoder XDCR.The drain electrode of storage unit M1 and M2 is connected to data line D1, and the drain electrode of storage unit M4 and M5 is connected to data line D2.The precharge control circuit PCC that control data line voltage is used, have the data read out function and play reading of data holding circuit effect and be connected to each data line D1 and D2, and column selection open gate Q4 and Q5 are connect thereon into big device circuit SAC and the state of memory cells detection circuit ALLC that is used for specified data holding circuit state.Each data line D1 and D2 are connected respectively to data line discharge storbing gate Q1 and Q2.The source electrode of storage unit M1 to M5 is connected to common source line S and ground connection (underlayer voltage Vss).
Precharge control circuit PCC forms as the device of MOSFET of grid input and the like with the terminal signaling of sense amplifier circuit SAC as the MOSFET of grid inputs and one with a precharging signal at least by one.
Said memory cells is not special the qualification, it can be a kind of be similar to can wipe, the structure of programmable read only memory (EPROM) storage unit.Yet, its reprogramming method is different from the ultraviolet conventional EPROM of use in this point, promptly utilize between floating boom and the substrate, and each drain electrode of data line coupling between or and the source electrode of source electrode line coupling between tunnel(l)ing, or control gate and drain electrode added high pressure programme again to produce the method that thermoelectron injects.Figure 19 b shows the definition of storage unit programming operation.The operation that the threshold voltage that makes storage unit is higher than thermal equilbrium state is defined as erase operation, and is defined as programming operation threshold voltage is reduced to the operation near thermal equilbrium state.
In erase operation, optionally positive high voltage is added on word line.Drain voltage, source voltage and channel voltage are set at underlayer voltage Vss.In a storage unit that is wiped free of, electron accumulation in its floating boom, even thereby in read operation word line and drain line chosen, do not have electric current at storage unit flow (" 0 " state) yet.
In programming operation, (1) after being wiped free of, the storage unit threshold voltage optionally enters the low-voltage attitude from the high voltage attitude.For this purpose, (2) are set to positive voltage at the drain voltage (data line voltage) of when programming storage unit to selected storage unit, and non-selected storage unit is set to 0 volt.
When the data of packing into were taken into device, column address decoder YDCR was in running order, was loaded into from the next data of exterior terminal and read amplifying circuit SAC.Also can partly programme, data are temporary in sense amplifier circuit SAC at that time again, only information necessary in the storage unit are programmed from the outside of device again.
When programming operation, programming is to utilize the data that are taken among the sense amplifier circuit SAC to carry out.Keep positive voltage corresponding to the data among the sense amplifier circuit SAC of the storage unit that will programme, and the not data programmed among the sense amplifier circuit SAC is got underlayer voltage Vss.The execution of programming operation (one state) be by means of: special word line voltage corresponding to the section of will programming optionally is set at negative voltage, tunnel(l)ing optionally occurs owing to the voltage difference between floating boom and the drain electrode, the electronics that is accumulated in floating boom is pulled to drain side (one state).
The state of storage unit and data line when Figure 21 shows programming.Suppose: the threshold voltage that is connected in the storage unit of data line b2 and b4 is a high voltage, and the threshold voltage that is connected in the storage unit of data line b3 and b4 is a low-voltage.In addition, the data that are encased in storage unit are expressed as the data of initially packing into.In the proof procedure after packing into, by means of pre-charge circuit PCC, data are carried out precharge to data line (b2 and b4) according to initially packing into.After choosing word line, only the data line voltage with b4 drops to 0 volt from the 3V volt then, and b2 is owing to the storage unit threshold voltage is that high voltage remains on 3 volts.As a result, have only the data of resetting in the sensing latch circuit of b2 just to remain on 3 volts.
After the program verification, survey the state of storage unit with state detection circuit ALLC.If at least one has the state that information is specified programming (3V) by the sense amplifier circuit SAC latched data that is connected in each data line, programming operation repeats once more.When total data shows that all programming has been finished among the sense amplifier circuit SAC in the state of memory cells exploration operation, to survey and determining operation behind terminal point, the programming operation that repeats just comes to an end and ends.
In addition, concerning state detection circuit ALLC, the program state detection circuit is made up of at least one MOSFET or the non-volatile semiconductor memory cell similar in appearance to storage unit, and with respect to each data line the output of sense amplifier circuit SAC to be connected to the grid input of MOSFET just enough.If use non-volatile semiconductor memory cell as storage unit, might programme to threshold voltage corresponding to the non-volatile semiconductor memory cell of the ALCC of the data line that is connected to the storage unit of having damaged in the storage array, thereby the data latching erasing of information that is connected in the sense amplifier circuit SAC of the irrelevant data line of definite target.
When program verification, the voltage of selected word line is set to power source voltage Vcc, and will be about 1 volt low-voltage by precharge control circuit PCC supply data line.In the storage unit of erase state (" 0 "), threshold voltage is a high pressure, even word line W is chosen in the program verification process, also leakage current flows.So data line remains on 1 volt.Because the threshold voltage of the storage unit of programmed state (" 1 ") is a low-voltage, so data line voltage is lower than pre-charge voltage (1 volt).Data line voltage is accepted to output to exterior terminal by common data line via column select switch storbing gate Q4, Q5 and Q6 again to determine " 0 " or " 1 " by sensor amplifier SAC.
Since aforesaid when program verification word line voltage be supply voltage, the threshold voltage of storage unit must be controlled under one that is not defeated by low supply voltage low positive electricity value situation accurately.So programming operation is divided into several times, all carries out a program verification during programming of at every turn dividing, and confirm whether the threshold voltage of storage unit has reached programmed threshold voltage (program verification).If not enough, overprogram more then.When said procedure was verified, the voltage lower than the voltage that is generally used for reading was added to word line.Like this with regard to the higher limit of threshold voltage distribution in one group of (section) storage unit of may command.
Adopt said structure just can reach first and second purposes of the present invention.That is, the continuation of programming and program verification process and termination are to determine with the state of memory cells detection circuit ALLC that offers each data line in the programming operation again, this makes when all having finished programming on the chosen storage unit on the data line that is connected in the target of all will programming, and stops whole programming operation.
Fig. 2 shows the circuit diagram that is extended a semiconductor nonvolatile memory device that obtains by Fig. 1.Each circuit component is manufactured on on the semi-conductive substrate among Fig. 2.
A complementary address signal of being formed by the address buffering circuit XADB and the YADB that accept row address signal AX that exterior terminal provides and column address signal AY is offered row address decoder XDGR and column address decoder YDCR.
Each data line is connected to common data line CD by column selection open gate Q4, Q5 and the Q6 that receives the selection signal that is formed by address decoder YDCR.Common data line CD is by MOSFET Q8 and be used for data programmed input buffer DIB and be connected to exterior terminal I/O.Wherein, the program control signal we that the inside of on produced when Q8 was received in programming, DIB then receive from the programming signal of exterior terminal I/O input.Common data line CD also is connected to exterior terminal I/O by switch MOS FET Q7 and the data output buffer DOB that is used for program verification.The program verification control signal se that connects when wherein Q7 receives the inner program verification that produces.
Fig. 3 shows address buffer circuit ADB (XADB and YADB) and embodiment.Row and column address buffer circuit XADB and YADB activate with selection signal in the device or chip start signal (CE), get address signal Ax from exterior terminal, and a complementary address signal of being made up of synchronous internal address signal ax of address signal that provides with exterior terminal and antiphase address signal ax is provided.In addition, in present specification, "-" expression complementary signal.
In Fig. 2, row address decoder XDCR constitutes the selection signal of word line Wi in the memory array according to the complementary signal of row address buffer circuit XADB, and column address decoder YDCR is according to the complementary address signal of column address buffer circuit YADB, in a similar manner the selection signal of composition data line Di.
Address input signal in this device can be a word line system address signal.The data that are enough in device, to produce a data wire system address signal this moment and handle the cell group that is connected in selected word line continuously.The byte number that is connected in each storage unit of same word line is assumed to be 512 bytes or 256 bytes, and this unit definition is a section.
In the address buffer circuit ADB of Fig. 3,, require to have at least from the function of outside acknowledge(ment) signal Ax and the function of coming latch signal by internal signal ALTCH and ALTCH for word line system address buffer circuits XADB.For data line system address buffer circuits YADB, require to receive at least the inner signal Axi that produces and complementary address signal ax of output and ax.
The signal Axi that produces with portion is produced by the device that home address shown in Figure 4 produces circuit and so on automatically.Circuit shown in Figure 4 is made up of an oscillatory circuit and a plurality of binary counter BC, that is, accept one and activate the signal OSC of internal oscillator so that internal oscillator circuit produces vibration, and its, signal was received by binary counter BC oscillation period, and the output of each binary counter BC then is generated as data line system address signal Ali to Axi.
Fig. 5 shows the embodiment of input buffer circuit DIB and output buffer circuit DOB inner structure.
Input buffer circuit DIB is an impact damper, is used for receiving by means of activating an internal signal we and inversion signal we thereof the data from exterior terminal I/O.Above-mentioned column selection open gate Q4, Q5 and Q6 be according to the address and selected, so as with data transmission to the sense amplifier circuit SAC that the data latching function is arranged.Output buffer circuit DOB is an impact damper, be used for by means of internal activation signal oe and oe and data are outputed to exterior terminal I/O when the program verification, wherein, oe and oe are that the exterior terminal output enabling signal that will more be described by above-mentioned internal signal se and back etc. produces.In this circuit, a voltage conversion circuit is arranged between the door and exterior I/O terminal with the input end that is connected to an internal signal se.This is in order to compensate the threshold voltage reduction that transmission gate causes.
Timing control circuit CONT shown in Figure 2 produces timing signal as internal control signal ce, se, we, oe, DDC, PG, DG, RO, PO, R1 and P1, and internal power source voltage is as word line supply voltage Vword, data line supply voltage Vyg, sense amplifier circuit pMOS supply voltage Vcd and nMOS supply voltage Vsd are so that optionally power to row address decoder XDCR and column address decoder YDCR etc., its method is: according to offering exterior terminal CE, OE, WE, SC, the chip start signal of RDY/BSY etc., the output enabling signal, write enabling signal, serial control signal, ready/the line is busy waits signal, carries out the inside increase and decrease of voltage with respect to power source voltage Vcc.
(, can enter by means of the input of the data that activate external signal CE and WE and exterior terminal I/O such as program verification operation and the operator scheme the programming operation (erase operation and programming operation) again as the order input of classes such as the 20H of program verification operation 00H, erase operation and programming operation 10H.For section is programmed again, can be with program command again, programming area sector address, zone field (data) etc. are taken into the device from exterior terminal again.At this moment, by means of the information or the ready/engaged signal of status register (status poll), can know whether again from the outside reprogrammed operation, again programming operation whether finish, whether just at erase operation with whether just at programming operation.
Fig. 6 shows the block scheme of programmed circuit first embodiment again.Each data line D1 and D2 have the connecting line construction of identical (equivalence).Concerning data line D1 (D2), precharge precharge control circuit PCC of control data line, one have the data read out function and have data to keep the sense amplifier circuit SAC of function and one to be used for determining simultaneously being connected between storage unit M1 and M2 (M4 and M5) and the column selection open gate Q4 (Q5) corresponding to the state detection circuit ALLC of the state of memory cells of data line to the data of packing into.
Constitute the following at least composition of MOSFET group of precharge control circuit PCC: a MOSFET a and a MOSFET b who imports as grid with precharging signal PG who imports as grid with the output of sense amplifier circuit SAC is one another in series, and one with MOSFET a that connects and b parallel connection, and with the data line gating signal DG that is used for data line D1 (D2) is connected to sense amplifier circuit SAC MOSFET c as the grid input.This structure is in order to make data line come optionally precharge by the data of precharging signal PG and sense amplifier circuit SAC.At least during checking and reading, added magnitude of voltage will be lower than supply voltage on the precharge PG signal wire.This is when being decided to be about 1 volt when data voltage, do not occur weak programming and a little less than wipe.
Sense amplifier circuit SAC is that MOSFET d and a plurality of MOSFET that forms latch cicuit of grid input forms by one with the internal signal SET that is used to set sense amplifier circuit SAC.Sense amplifier circuit SAC is used as the sensor amplifier with flip-flop circuit feature when program verification, and the latch cicuit of the data of when programming again, packing into as maintenance.The drain voltage of storage unit when the supply voltage Vcd of sense amplifier circuit SAC can equal programming operation in programming operation again, programming operation in programming process again and reading in (program verification) operation also can be fixed as the programming drain voltage and with regard to each operation conversion electric power voltage.
State of memory cells detection circuit ALLC is with respect to each data line Di (i=1,2) each is by being used for the P ditch MOSFET ei (i=1 that erase status is surveyed, 2) one of and the n ditch MOSFET fi (i=1 of the state detection that is used to pack into, 2) one of form, and the output of sense amplifier circuit SAC is connected to the grid of state detection MOSFET.Drain electrode and the source electrode of P ditch MOSFET ei and n ditch MOSFET fi join each other (A0a, A0b, Ala and Alb).In addition, the state detection system is not limited to this system, and can be a kind of electric current read-out system or a kind of voltage read-out system.
When Fig. 7 shows and carries out programming operation with pre-charge system again, the timing waveform of device inside signal.As previously mentioned, in programming operation again, programming, program verification and programming state exploration operation are carried out repeatedly.
The data of packing into are taken to sense amplifier circuit SAC when t1.The data that are connected in the sense amplifier circuit of the data line of selecting programming usefulness can be in Vcd or outer power voltage Vcc.Not selected data programmed is in underlayer voltage Vss.
During the t2, precharging signal PG is activated at t1, has only the data programmed of execution line just by optionally precharge, and the data of carrying out the data programmed line are from sense amplifier circuit SAC.Because the voltage of carrying out in the data programmed (" 1 ") is Vcd, the MOSFET a in precharge control circuit PCC shown in Figure 6 is the connection attitude and voltage can be added on data line Di.On the other hand, when keeping erase status (" 0 "), MOSFET a is the pass off-state and voltage can not be added on data line Di.
During the t2 to t3, the grid input signal DG of the MOSFETc among the precharge control circuit PCC is activated in Fig. 7, and the data message of sense amplifier circuit SAC (" 1 " representative voltage Vcd, " 0 " representative voltage Vss) is added to the drain lead end of storage unit.If the selected section of programming is cell group (M1 among Fig. 6, M4) section, voltage just is added between selection word line W1 that is added with negative voltage and the drain electrode that is in programming data voltage Vcd, thereby electronics just is injected into floating boom by tunnel(l)ing from drain electrode and has carried out programming, voltage as for not chosen word line W2, for suppressing the disturbing phenomenon that drain voltage (data voltage Vcd) causes, then add positive supply voltage.
During the t4, the gate signal DDC of data line discharge MOSFET is in noble potential at t3, and data line discharge MOSFET shown in Figure 10 is activated, thereby data line voltage is discharged.Afterwards with regard to starting program-verification operation.
During the t5, precharging signal PG is activated at t4, have only selected want data programmed line ability by the operation of the MOSFET a among sense amplifier circuit SAC and the precharge control circuit PCC by precharge, the situation during similar in appearance to t1 to t2.
From t5 during the t6, the used voltage that is lower than supply voltage (for example about 1.5 volts) is added on selected word line W1 during program verification usually.
Be accumulated in the electric charge in the stray capacitance of data line Di, depend on the threshold voltage of storage unit and optionally discharged.That is, when the threshold voltage of the storage unit of programming reaches desirable low threshold voltage, just there is electric current to flow in the storage unit, the voltage of data line just reduces.When not reaching programmed threshold voltage, data line Di keeps pre-charge voltage.Make data line precharging signal PG stand-by timing before word line selection signal activates by setting, can prevent the stable-state flow of memory cell current.
, be used for the grid input signal DG of the MOSFET c of data line Di and sense amplifier circuit SAC precharge control circuit PCC connected to one another is activated, and the voltage of data line Di is determined by sense amplifier circuit SAC during the t7 at tb.This determines to be finished by the charge distributing result between the data voltage (Vcd) of the voltage of the stray capacitance of the stray capacitance of data line Di, sense amplifier circuit SAC, data line Di and sense amplifier circuit.When the voltage of data line Di is higher than the logic threshold voltage of sense amplifier circuit SAC, the selected voltage (Vcd) of the data of packing into remains unchanged, and when voltage is lower than logic threshold voltage, the data of sense amplifier circuit SAC are underlayer voltage Vss, thereby automatically the data of packing into are carried out programming again.Moreover the grid input signal DG of MOSFET c finishes when determining at sensor amplifier among the precharge control circuit PCC, becomes stand-by signal.
During t7 to t8, on storage unit, carry out state detection and determine, all finished programming operation so that conclude the storage unit of whether all programmings.In Fig. 6, program state detection circuit ALLC has the rejection gate of input more than the structure of pre-charge system dynamic circuit, wherein each data line Dia is made of a n ditch MOSFET fi, the grid of MOSFET fi is connected to the output Dia of sense amplifier circuit SAC, and its source electrode with the drain electrode receive respectively source, drain electrode common port (Ala, Alb).Shared source line Ala and thread cast-off Alb are reset to underlayer voltage Vss in advance by signal R1 and P1 and MOSFET h and j, and reset and be maintained to time t7.
Because the activation of MOSFET g shown in Figure 6, internal signal P1 reduces and common source polar curve Ala rises to power source voltage Vcc, and the on/off of n ditch MOSFET fi is controlled by the data of sense amplifier circuit SAC.Therefore can determine the programming of the cell group (section) on all of data lines simultaneously.When the data that have a sense amplifier circuit SAC at least are that the voltage of common source line Ala just becomes underlayer voltage Vss when continuing data programmed (Vcd).On the other hand, if total data all is the data (underlayer voltage Vss) that programming is finished, the voltage of common source polar curve Ala just remains power source voltage Vcc, and this is a precharge magnitude of voltage.The programming and the continuation (turning back to t1) of program verification process and terminating in is based in the device that above-mentioned information controls.
Fig. 8 shows the sync waveform of interior each signal of device in the common program verification operation.At this moment, be connected in all data lines owing to will carry out the cell group (section) of program verification, the data of the sense amplifier circuit SAC among Fig. 6 are activated by internal signal SET, and are set to voltage Vcd during t1 to t2.
During the t5, identical (among Fig. 7, t4 is to t7) in all waveforms and the said procedure verification operation has only the voltage difference of chosen word line Wi at t2, and this voltage is voltage vcc when common program verification.The supply voltage Vcd of sense amplifier circuit SAC may be in outer power voltage Vcc.
Fig. 9 shows the timing waveform of the interior signal of device in erase operation and the erase verification operation.At t1 during the t2, positive high voltage is added on word line W1 chosen among Fig. 6, the discharged common gate signal DDC of MOSFET Q1 and Q2 of data line Di activates and is underlayer voltage Vss, and between memory cell channels and floating boom, produce voltage difference, so the beginning erase operation, electronics is injected in the floating boom at that time.
During the t6, the erase verification operation is similarly carried out with above-mentioned common program verification operation at after this t2.The voltage (for example 5V) of power source voltage Vcc is added on selected word line W1 when being higher than common program verification when erase verification.
During the t6, the grid input signal DG of the MOCFET c among data line Di and the interconnective precharge control circuit PCC of sense amplifier circuit SAC shown in Figure 6 is activated, and the voltage of data line Di is determined at t5 by sense amplifier circuit SAC.This determines to make according to the charge distributing result between the data voltage (Vcd) of the stray capacitance of data line Di, the voltage of stray capacitance, data line Di among the sense amplifier circuit SAC and sense amplifier circuit.When the voltage of data line Di is higher than the logic threshold voltage of sense amplifier circuit SAC, the selected voltage (Vcd) of obliterated data remains unchanged, and when voltage is lower than logic threshold voltage, the data of sense amplifier circuit SAC are underlayer voltage Vss, so automatically perform the programming again of obliterated data.Moreover the activation of the grid input signal DG of MOSFET c becomes stand-by when sensor amplifier is determined to finish among the precharge control circuit PCC.
, carry out the state detection of storage unit and determine during the t7 at t6, all reached erase threshold voltage so that conclude the threshold voltage of the cell group of whether all wiping.In Fig. 6, the erase status detection circuit has many input nand gates structure of pre-charge system dynamic circuit, wherein, concerning each data line Dia, all constitute by a P ditch MOSFETei, the grid of MOSFET ei is connected to the output Dia of sense amplifier circuit SAC, and its source electrode and be connected together respectively (A0a, the A0b) that drain.Source electrode line A0a that is connected together each other respectively and drain line A0b reset to underlayer voltage Vss in advance by signal PO and RO and MOSFETm and n, reset and discharge when t6.
Because the activation of MOSFET k, internal signal PO reduces, and public thread cast-off A0b is elevated to power source voltage Vcc, and P ditch MOSFET ei logical and be completely cured and control according to the data of sense amplifier circuit SAC.Like this, can be simultaneously definite wiping of the enterprising line storage unit group of all of data lines (section).When the data that have a sensor amplifier SAC at least were continuation obliterated data (Vcd), the voltage of common source polar curve A0a remained power source voltage Vcc, and this is the pre-charge voltage value.On the other hand, when total data all be that the voltage of common source polar curve A0a is underlayer voltage Vss when wiping the data of finishing (underlayer voltage Vss).The continuation of erase operation (turning back to t1) and end is based on that above-mentioned information controls in device.
Figure 10 shows the second embodiment block scheme of programmed circuit again.The block scheme of programmed circuit is similar again with first, all provides a precharge control circuit PCC, a sense amplifier circuit SAC and a state detection circuit ALLC to each data line Di.To describe below and first not the existing together of programmed circuit block scheme again.At first, the pre-charge voltage of data line is to be controlled by the magnitude of voltage of the precharging signal PG among the precharge control circuit PCC.This control is to use the source voltage VPG of the MOSFET a of series connection to realize.Secondly, sense amplifier circuit SAC receives one group of SET signal, and it is connected to the Dib in the latch circuit that constitutes sense amplifier circuit SAC.The 3rd, power lead Vcd among the sense amplifier circuit SAC and Vsd are shared (as base plates) to a plurality of sense amplifier circuit SAC.Moreover, might use the power supply lead wire of open node.
In the present embodiment, by means of memory cell array being divided into two or more zones and being offset the activation moments of each internal control signal (as precharging signal PG, data line gating signal DG and latch signal SET), can reduce the peak value of loss current among the sense amplifier circuit SAC.
Figure 11 shows a block scheme of programmed circuit again, and wherein the present invention is used to the programmable read only memory with non-formula electric erasable.The circuit ALLC that surveys state of memory cells is made up of two MOSFET, and each MOSFET has one to be connected to the incoming line of read/write circuit and the grid input end of output lead.Drain electrode and the source electrode of these MOSFET connect altogether with data line, then constitute the rejection gate of input more than structure, as the pre-charge system dynamic circuit.For the low threshold voltage signal on all data lines of storage unit among the synchronizing detection array a (that is, a state that is wiped free of), the line Aa of pre-charge method during, Ab applicable to above-mentioned timing.Want synchronizing detection high threshold voltage signal (that is, a state that writes), use line Ba, Bb.
Figure 12 shows the circuit diagram of second memory array of the present invention.Have at least two or more storage unit to connect shown in the figure, and be that the drain electrode of grid input selects MOSFETnm to be connected between public drain electrode diffusion layer lead-in wire D1nm and the data line Dm with type families system signal Wn by diffusion layer D1nm etc.
When forming word line, just might obtain Figure 13 and memory cell array structure shown in Figure 14 with hierarchy.Figure 13 shows the circuit diagram of the 3rd storage array of the present invention.Have at least two or more storage unit to connect among the figure by diffusion layer D1nm, S1nm etc., and be that the drain electrode of grid input selects MOSFET Dnm to be connected between public drain electrode diffusion layer lead-in wire D1nm and the data line Dm with type families systems signal Wnd, and be that the drain selection MOSFET SSnm of grid input is connected public source diffusion layer lead-in wire S1nm and is connected between the diffusion layer lead-in wire CS1n of common source polar curve CS with type families system signal Wsn.In Figure 13, W11, W12, W1, W2, W21, W22 ..., Wn, Wn1 and Wn2 representative has each word line of hierarchy, and access is controlled in two steps.When word line was typically expressed as Wn and Wnd, subscript n was represented first signal (main signal) of selecting word line to use, and d represents the secondary signal (sub signal) of selecting word line to use.For example, when first signal (main signal) of selecting word line to use was " 2 ", W2 was activated; And when first signal (main signal) of selecting word line to use for " 2 " and when selecting secondary signal (sub signal) that word line uses for " 1 ", W21 is activated.
In the device Butut, almost the whole surface of memory cell array area occupied is all covered by word line.Quantitatively, not chosen word line reaches thousands of and word line voltage on it is underlayer voltage Vss in common program verification operation and each verification operation.Therefore, the stray capacitance between data line and the word line system lead-in wire is stable.
Figure 14 shows one embodiment of the present of invention, and its base arrangement has the more cell group of one of formation.Reference voltage Vref replaces underlayer voltage Vss to be added on the precharge control circuit PCC of the latch circuit that constitutes sense amplifier circuit SAC and does not link on the lead-in wire on the reverse side of state detection circuit ALLC (Dib among Figure 10).Like this, by comparing, can determine program verification (" 1 ", " 0 ") by sense amplifier circuit SAC with reference voltage Vref.
Figure 15 shows the embodiment of the present invention's the 3rd base arrangement.It has open bit line structure, and wherein the storer base plate is divided into two parts.Shown in Figure 10 second again the block scheme of programmed circuit be equivalent to this base arrangement.
Figure 16 illustrates the embodiment of the 4th kind of base arrangement of the present invention.With the difference of Figure 14 be: an empty data line of reference is provided, the identical stray capacitance with common data line Di is provided, and be used to produce reference voltage Vref with reference to empty data line voltage.
Figure 17 shows the embodiment of the 5th kind of base arrangement of the present invention.Precharge control circuit PCC, sense amplifier circuit SAC and state wipe slowdown monitoring circuit ALLC be positioned in the following of storage base plate and above, and in odd number data line and even number data line unit, move.When the odd number data line moved, the even number data line was used as with reference to empty data line.When the even number data line moved, those lines on odd number data line limit were with empty data line for referencial use.
Figure 18 shows the embodiment of the present invention's the 6th base arrangement.The storage unit that constitutes the storage base plate is arranged on the point of crossing of the point of crossing of odd number word line and odd number data line and even number word line and even number data line.To adjacent data line, all arranged sense amplifier circuit SAC and state detection circuit ALLC, and each adjacent data line is all used empty data line for referencial use for each.
As mentioned above, the present invention has so significant effectiveness, so that can utilize all of data lines automatically to survey simultaneously and carry out the electricity state of the storage unit of programming operation (that is erase operation and programming operation) again, and only continuation of wiping, programming inadequate in the device and termination etc. be controlled.
Claims (8)
1. a semiconductor storage unit comprises
First data line (D1);
Second data line (d1) that be arranged in parallel with described first data line;
The many word lines (W1-Wn) that all intersect with described first and second data lines;
Be arranged on a plurality of storage unit on the required point of crossing of described first data line, second data line and described many word lines;
Be connected to first pre-charge circuit (PCC) of described first data line;
Be connected to second pre-charge circuit (PCC) of described second data line;
Input end is connected to first sensor amplifier (SAC) and second sensor amplifier (SAC) of described first data line and second data line;
Be connected to first common data line (CD) of the described first sensor amplifier output terminal;
Be connected to described second second common data line (CD) of reading amplifier out;
Be arranged on the output terminal of described first sensor amplifier and first state detection circuit (ALLC) between described first common data line; And
Be arranged on the output terminal of described second sensor amplifier and second state detection circuit (ALLC) between described second common data line;
Wherein, described a plurality of storage unit be arranged between described first pre-charge circuit (PCC) and second pre-charge circuit (PCC), between described first sensor amplifier and described second sensor amplifier and between described first common data line and described second common data line.
2. semiconductor storage unit as claimed in claim 1, wherein, described first sensor amplifier and described second sensor amplifier are basic identical on circuit structure.
3. semiconductor storage unit as claimed in claim 1, wherein, described a plurality of storage unit are non-volatile memory cells.
4. semiconductor storage unit as claimed in claim 3, wherein, described second data line was used as with reference to empty data line when the data in described storage unit were read into described first data line, and the data in described storage unit when being read into described second data line described first data line be used as with reference to empty data line.
5. semiconductor storage unit comprises:
A plurality of data lines to (D1, d1, D2, d2);
With the many piece word lines (W1-Wn) of described a plurality of data lines to intersecting;
Be arranged on described a plurality of data line to the required point of crossing of described many word lines on a plurality of storage unit;
Be connected to first pre-charge circuit (PCC) of described data line to a data line of each corresponding centering; And
Be connected to second pre-charge circuit (PCC) of described a plurality of each corresponding another data line of centering of data line centering;
Be a plurality of first sensor amplifiers (SAC) of described each corresponding data line of a plurality of data line centerings to being provided with;
Be connected to first common data line (CD) of the output terminal of described a plurality of first sensor amplifiers;
Be a plurality of second sensor amplifiers (SAC) of described each corresponding data line of a plurality of data line centerings to being provided with;
Be connected to second common data line (CD) of the output terminal of described a plurality of second sensor amplifiers,
Be arranged on first state detection circuit (ALLC) between described each corresponding one output terminal of a plurality of first sensor amplifier and described first common data line; And
Be arranged on second state detection circuit (ALLC) between described each corresponding one output terminal of a plurality of second sensor amplifier and described second common data line;
Wherein, described a plurality of storage unit is arranged between described a plurality of first sensor amplifier and described a plurality of second sensor amplifier and between described first common data line and described second common data line.
6. semiconductor storage unit as claimed in claim 5, wherein, described a plurality of first sensor amplifiers and described a plurality of second sensor amplifier are structurally basic identical.
7. semiconductor storage unit as claimed in claim 6, wherein, described a plurality of storage unit are non-volatile memory cells.
8. semiconductor storage unit as claimed in claim 7, wherein, when the data in the described storage unit were read into data line that described a plurality of data line centering tackles mutually, another data line that described a plurality of data line centerings are tackled mutually was used as with reference to empty data line; And when described another data line that the data in the described storage unit are read into that described a plurality of data line centering tackles mutually, the described data lines that described a plurality of data line centerings are tackled mutually is used as with reference to empty data line.
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| Application Number | Priority Date | Filing Date | Title |
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| JP19818093A JP3252306B2 (en) | 1993-08-10 | 1993-08-10 | Semiconductor nonvolatile storage device |
| JP198180/93 | 1993-08-10 | ||
| JP198180/1993 | 1993-08-10 |
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| CN94106214A Division CN1087474C (en) | 1993-08-10 | 1994-06-01 | Semiconductor nonvolatile momory device |
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| CN1221957A CN1221957A (en) | 1999-07-07 |
| CN1118069C true CN1118069C (en) | 2003-08-13 |
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| CN94106214A Expired - Lifetime CN1087474C (en) | 1993-08-10 | 1994-06-01 | Semiconductor nonvolatile momory device |
| CN98116144A Expired - Lifetime CN1118069C (en) | 1993-08-10 | 1998-07-20 | Semiconductor nonvolatile memory device |
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| CN94106214A Expired - Lifetime CN1087474C (en) | 1993-08-10 | 1994-06-01 | Semiconductor nonvolatile momory device |
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| US (1) | US5446690A (en) |
| JP (1) | JP3252306B2 (en) |
| KR (1) | KR100322824B1 (en) |
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| US4819212A (en) * | 1986-05-31 | 1989-04-04 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device with readout test circuitry |
| US5172338B1 (en) * | 1989-04-13 | 1997-07-08 | Sandisk Corp | Multi-state eeprom read and write circuits and techniques |
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