CN111799106A - Method and device for manufacturing planar capacitor - Google Patents
Method and device for manufacturing planar capacitor Download PDFInfo
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- CN111799106A CN111799106A CN202010485631.2A CN202010485631A CN111799106A CN 111799106 A CN111799106 A CN 111799106A CN 202010485631 A CN202010485631 A CN 202010485631A CN 111799106 A CN111799106 A CN 111799106A
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- 125000002723 alicyclic group Chemical group 0.000 claims description 4
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- 229910002113 barium titanate Inorganic materials 0.000 claims description 4
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 claims description 4
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 claims description 4
- 239000002270 dispersing agent Substances 0.000 claims description 4
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 claims description 4
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- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 claims description 3
- JXDXDSKXFRTAPA-UHFFFAOYSA-N calcium;barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[Ca+2].[Ti+4].[Ba+2] JXDXDSKXFRTAPA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 3
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 3
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- 239000011889 copper foil Substances 0.000 description 39
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- 150000004645 aluminates Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- KHKWDWDCSNXIBH-UHFFFAOYSA-N [Sr].[Pb] Chemical compound [Sr].[Pb] KHKWDWDCSNXIBH-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/14—Organic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
Abstract
The invention discloses a manufacturing method of a planar capacitor, which comprises the following steps: manufacturing dielectric layer slurry for forming a dielectric layer; coating the dielectric layer slurry on the surface of the first metal foil layer, and drying the dielectric layer slurry to form a dielectric layer in a semi-cured state or lower than the semi-cured state on the surface of the first metal foil layer; laminating the first metal foil layer attached with the dielectric layer and the second metal foil layer, wherein the surface of the first metal foil layer attached with the dielectric layer faces the second metal foil layer and is laminated to obtain the planar capacitor; the dielectric layer comprises epoxy resin. The planar capacitor prepared by the method has high stripping force, and the stripping force of the dielectric layer and the metal foil layers on the two sides is basically consistent and stable, so that the planar capacitor has excellent reliability.
Description
Technical Field
The invention relates to the technical field of planar capacitor processing, in particular to a manufacturing method and a manufacturing device of a planar capacitor.
Background
With continuous innovation of microelectronic science and technology, the trend of high speed and miniaturization of various types of electronic devices is continuously strengthened, the thickness of a dielectric layer of a thin film capacitor is required to be thinner and thinner, but the stripping force cannot be reduced due to the thinning of the thickness of the dielectric layer. In the production process of electronic products, since the electronic components are produced and assembled in a plurality of stages, the components are likely to be contaminated by the contaminated particles, which may cause quality problems of the electronic components, such as corrosion, failure, short circuit, etc. Many manufacturing lines employ a cleaning process for the components. Sometimes, after the cleaning process on the production line, we find some peeling of the top layer of the film capacitor, as shown in fig. 1. This peeling may occur when the film capacitor is cleaned after the top plate soldering process, or subjected to excessive mechanical stress or washing. Therefore, the preparation process of the dielectric layer high-peeling force planar capacitor becomes a hot point of research at present.
The current preparation technology of the planar capacitor is to coat a dielectric layer on a copper foil substrate, and the dielectric layer is combined with a second surface after passing through a drying oven to prepare the planar capacitor. The planar capacitor prepared by the process method can be prepared to basically meet the required stripping force, but due to the problem of the composition of the dielectric layer, the planar capacitor prepared by the process method has low stripping force strength and poor stability and uniformity of the stripping force, so that the integral reliability of the planar capacitor is influenced.
Disclosure of Invention
In order to overcome the defects and shortcomings in the prior art, the invention aims to provide a manufacturing method and a manufacturing device of a planar capacitor, so as to solve the problems of small peeling force strength, unstable peeling force and non-uniformity of the planar capacitor in the prior art.
The purpose of the invention is realized by the following technical scheme:
the invention provides a manufacturing method of a planar capacitor, wherein the planar capacitor comprises a first metal foil layer, a second metal foil layer and a medium layer arranged between the first metal foil layer and the second metal foil layer, and the manufacturing method comprises the following steps:
manufacturing dielectric layer slurry for forming the dielectric layer;
coating the dielectric layer slurry on the surface of the first metal foil layer, and drying the dielectric layer slurry to form a dielectric layer in a semi-cured state or a state lower than the semi-cured state on the surface of the first metal foil layer;
laminating the first metal foil layer attached with the dielectric layer and the second metal foil layer, wherein the surface of the first metal foil layer attached with the dielectric layer faces the second metal foil layer and is laminated to obtain the planar capacitor;
the dielectric layer comprises epoxy resin, and the epoxy resin is at least one of glycidyl ether type epoxy resin, glycidyl ester type epoxy resin, glycidyl amine type epoxy resin, alicyclic epoxy resin, epoxidized olefin compound, sugarcane polyhydric alcohol epoxy resin and mixed structure epoxy resin.
Furthermore, the composition of the dielectric layer further comprises at least one of inorganic filler, auxiliary agent and solvent; the auxiliary agent is at least one of a curing agent, a dispersing agent, a coupling agent, a flatting agent, a defoaming agent and an accelerating agent; the inorganic filler is at least one of barium sodium titanate, barium titanate, copper calcium titanate, strontium titanate, barium strontium titanate, calcium titanate, barium calcium titanate, lead zirconate titanate, lead sodium titanate and lead titanate; the solvent comprises at least one of acetone, pentanone, alcohol and butanone.
Further, the method for manufacturing the dielectric layer slurry comprises the following steps:
adding the epoxy resin into a first solvent, and stirring at the temperature of 20-40 ℃ for 15-35 min to obtain a mixed solution of the dielectric layer slurry;
stirring and dispersing the inorganic filler in a second solvent to obtain a suspension of the dielectric layer slurry, and stirring and dispersing the suspension in the mixed solution;
adding an auxiliary agent, stirring and mixing uniformly to obtain a mixture of the dielectric layer slurry, pouring the mixture into a ball milling tank, and ball milling for 5-15 h at the rotating speed of 100-200 rpm to obtain the dielectric layer slurry.
Further, the mass ratio of the epoxy resin to the first solvent is 1: 3-1: 6. The mass ratio of the inorganic filler to the second solvent is 1: 2-1: 5.
Further, the method for drying the dielectric layer slurry comprises the following steps:
and heating and drying the dielectric layer slurry at a preset drying temperature, and keeping the temperature for a preset time, wherein the drying temperature is 35-60% of the curing temperature of the dielectric layer slurry, and the preset time is 2-6 min.
Further, firstly, preserving heat at a first drying temperature for a first preset time; then keeping the temperature at the second drying temperature for a second preset time; and finally, keeping the temperature at a third drying temperature for a third preset time to obtain the dielectric layer in a semi-cured state or lower than the semi-cured state, wherein the first drying temperature of the dielectric layer is more than or equal to 35 percent of the curing temperature, and the second drying temperature is more than or equal to 60 percent of the curing temperature of the dielectric layer.
Further, the first preset time is 0.7-2 min; the second preset time is 0.7-1.5 min; the third preset time is 2.5-3.6 min.
Further, the method for laminating the first metal foil layer and the second metal foil layer attached with the dielectric layer comprises the following steps:
pressing the first metal foil layer and the second metal foil layer attached with the dielectric layer at a preset temperature and a preset pressure to obtain the planar capacitor;
the preset temperature is 100-150 ℃, and the preset pressure is 3-6 kg/cm2。
Further, the thickness of the first metal foil layer or the second metal foil layer is 9-50 μm, and the thickness of the dielectric layer is 1-20 μm.
The invention also provides a device for manufacturing the planar capacitor, which is applied to the manufacturing method and comprises a laminating unit, a drying box, a first transmission roller and a second transmission roller, wherein the laminating unit comprises an upper laminating steel roller, a rubber roller and a lower laminating steel roller, the upper laminating steel roller is attached to the rubber roller, the lower laminating steel roller is attached to the rubber roller, the drying box is used for heating and drying the dielectric layer on the first metal foil layer, the first metal foil layer with the dielectric layer coated on the surface is transmitted by the first transmission roller and dried by the drying box, and the second metal foil layer is transmitted by the second transmission roller.
The invention has the beneficial effects that: the manufacturing method of the planar capacitor comprises the following steps: manufacturing dielectric layer slurry for forming a dielectric layer; coating the dielectric layer slurry on the surface of the first metal foil layer, and drying the dielectric layer slurry to form a dielectric layer in a semi-cured state or lower than the semi-cured state on the surface of the first metal foil layer; laminating the first metal foil layer attached with the dielectric layer and the second metal foil layer, wherein the surface of the first metal foil layer attached with the dielectric layer faces the second metal foil layer and is laminated to obtain the planar capacitor; the dielectric layer comprises epoxy resin, and the epoxy resin is at least one of glycidyl ether type epoxy resin, glycidyl ester type epoxy resin, glycidyl amine type epoxy resin, alicyclic epoxy resin, epoxidized olefin compound, sugarcane polyhydric alcohol epoxy resin and mixed structure epoxy resin. The planar capacitor prepared by the method has high stripping force, the stripping force of the dielectric layer and the two metal foil layers is basically consistent and stable, and the planar capacitor has excellent reliability.
Drawings
FIG. 1 is a schematic top-layer peel-off view of a prior art thin film capacitor;
FIG. 2 is a schematic view of a process for fabricating a planar capacitor according to the present invention;
FIG. 3 is a schematic structural diagram of a planar capacitor according to the present invention;
fig. 4 is a block diagram of the process of fabricating the planar capacitor of the present invention.
In the figure: the planar capacitor comprises a planar capacitor 10, a first metal foil layer 11, a second metal foil layer 12, a dielectric layer 13, a laminating unit 20, an upper laminating steel roller 21, a rubber roller 22, a lower laminating steel roller 23, a drying box 30, a first drying chamber 31, a second drying chamber 32, a third drying chamber 33, a first transmission roller 41 and a second transmission roller 42.
Detailed Description
To further illustrate the technical means and effects of the present invention adopted to achieve the predetermined objects, the following detailed description of the embodiments, structures, features and effects of the method and the device for manufacturing a planar capacitor according to the present invention with reference to the accompanying drawings and preferred embodiments is as follows:
[ example one ]
As shown in fig. 2, an apparatus for manufacturing a planar capacitor according to an embodiment of the present invention includes a laminating unit 20, a drying oven 30, a first conveying roller 41, and a second conveying roller 42, where the laminating unit 20 includes an upper laminating steel roller 21, a rubber roller 22, and a lower laminating steel roller 23. The upper covering steel roller 21 and the rubber roller 22 are arranged in a fitting manner. The lower clad steel roller 23 and the rubber roller 22 are attached. The drying box 30 includes a first drying chamber 31, a second drying chamber 32, and a third drying chamber 33, the first drying chamber 31, the second drying chamber 32, and the third drying chamber 33 respectively correspond to a first drying temperature, a second drying temperature, and a third drying temperature, the drying box 30 is configured to heat and dry the dielectric layer 13 on the first metal foil layer 11, the first metal foil layer 11 with the dielectric layer 13 coated on the surface thereof is transported by a plurality of first transport rollers 41 and dried by the drying box 30, and the second metal foil layer 12 without the dielectric layer is transported by a second transport roller 42.
As shown in fig. 2 to fig. 4, a method for manufacturing a planar capacitor according to a first embodiment of the present invention is applied to the manufacturing apparatus. The planar capacitor 10 includes a first metal foil layer 11, a second metal foil layer 12, and a dielectric layer 13 disposed between the first metal foil layer 11 and the second metal foil layer 12.
The manufacturing method comprises the following steps:
step S1: a dielectric layer paste for forming the dielectric layer 13 is prepared. The dielectric layer slurry (dielectric layer 13) comprises at least one of inorganic filler, auxiliary agent, epoxy resin and solvent.
Wherein the inorganic filler is at least one of barium sodium titanate, barium titanate, copper calcium titanate, strontium titanate, barium strontium titanate, calcium titanate, barium calcium titanate, lead zirconate titanate, lead sodium titanate and lead titanate. The inorganic filler can be selected from at least one of one-dimensional filler, two-dimensional filler and particle powder filler. Preferably, one-dimensional fillers are adopted, and compared with two-dimensional fillers and/or particle powder fillers, the one-dimensional ceramic fillers can increase the effective interface area and the electric dipole moment, so that higher dielectric constant and energy storage density can be obtained under the same addition amount. For example, the one-dimensional inorganic filler may have a particle size of 50nm to 2 μm, a spherical or spheroidal shape, or the like. The mass fraction of the inorganic filler in the dielectric layer 13 may be 20% to 60%.
The auxiliary agent is at least one of curing agent, dispersing agent, coupling agent, flatting agent, defoaming agent and accelerating agent. The mass fraction of the auxiliary agent can be 1-5%. Wherein the dispersant can be nonionic emulsifier, cationic emulsifier or anionic emulsifier. The coupling agent can be at least one selected from silane coupling agent, titanate coupling agent, aluminate coupling agent and phosphate coupling agent. The Silane coupling agent may be, for example, KH550, KH560, KH570 or KH551 available in China, or OFS-6020, OFS-6030 or OFS-6040 available from Dow Corning, or A-186Silane, A-171Silane, A-1120Silane or A-1100Silane available from Meiji Korea, or KBM303, KBM503, KBM603, KBM403, KBE1003 or KBE903 available from Japan. The titanate coupling agent may be, for example, titanate coupling agent-101, titanate coupling agent-102, titanate coupling agent-105, titanate coupling agent-130 or titanate coupling agent-133 of Qiyu chemistry, or TytanAP100 of DuPont, or R-TTS, KR-38S, KR-12, KR-9S or TTOP-38S of Kenzich, USA, or TC-70 of Houston chemical. The aluminate coupling agent can be HY-133, HY-1804, HY-1805, HY-1108, HY-999 or HY-988 of Jersey chemical engineering, Hangzhou. The phosphate coupling agent is, for example, domestic DN-27, DN-37 or DN-307. The leveling agent can be at least one of organic silicon leveling agent and fluorocarbon leveling agent. The silicone leveling agent may be, for example, WE-D9000, Europe style KLE-41, BYK-300, BYK-306, BYK-307, or BYK-310. The fluorocarbon leveling agent can be, for example, EFKA-3600 or EFKA-E3500.
The epoxy resin is at least one of glycidyl ether type epoxy resin, glycidyl ester type epoxy resin, glycidyl amine type epoxy resin, alicyclic epoxy resin, epoxidized olefin compound, sugar cane polyol epoxy resin and mixed structure epoxy resin. The mass fraction of the epoxy resin can be 8-25%.
The solvent is at least one of acetone, butanone, alcohol and pentanone. The mass fraction of the solvent is 20-40%.
Specifically, the dielectric layer slurry is prepared by the following method: adding epoxy resin into a first solvent, and stirring (ultrasonic stirring) at the temperature of 20-40 ℃ for 15-35 min to obtain a mixed solution of the dielectric layer slurry; stirring (ultrasonic stirring) the inorganic filler to disperse in the second solvent to obtain a suspension of the dielectric layer slurry, and stirring (ultrasonic stirring) the suspension to disperse in the mixed solution; adding the auxiliary agent, stirring and mixing uniformly to obtain a mixture of the dielectric layer slurry, pouring the mixture into a ball milling tank, and ball milling for 5-15 h at the rotating speed of 100-200 rpm (r/min). The mass ratio of the epoxy resin to the first solvent is 1: 3-1: 6, the mass ratio of the inorganic filler to the second solvent is 1: 2-1: 5, the first solvent and the second solvent can be the same or different, and the first solvent and the second solvent are selected from one or more of acetone, butanone, alcohol and pentanone.
Step S2: the dielectric layer slurry is coated on the surface of the first metal foil layer 11, and the dielectric layer slurry is dried, so that the dielectric layer 13 is formed on the surface of the first metal foil layer 11. The dielectric layer 13 is in a state lower than the semi-cured state or the semi-cured state at this time.
Specifically, after the dielectric layer slurry is coated on the surface of the first metal foil layer 11, and after the heat preservation is performed at the drying temperature for the preset time, the dielectric layer 13 is in a semi-cured state or lower than the semi-cured state, so that the first metal foil layer 11 with the dielectric layer 13 coated on the surface is obtained. The drying temperature can be 35% -60% of the curing temperature of the dielectric layer 13, the preset heat preservation time corresponding to the drying temperature can be 2-6 min, preferably 2-4 min, and the dielectric layer 13 is in a semi-cured state or lower than the semi-cured state. In an alternative embodiment, the drying process may be performed using a low-temperature drying oven 30 (see fig. 2), the first drying chamber 31 has a first drying temperature, the second drying chamber 32 has a second drying temperature, and the third drying chamber 33 has a third drying temperature, and the time for which the first metal foil layer 11 passes through the drying chambers may be set by setting the lengths of the drying chambers. For example, the first metal foil layer 11 coated with the semi-cured dielectric layer 13 or a layer lower than the semi-cured dielectric layer is passed through a long low-temperature drying oven 30 with a proper oven temperature at a constant speed (2-8 m/min, for example, 3m/min) at a certain speed. Here, the preset keeping warm time may be regarded as a time of stay in the drying box 30 at a specific temperature.
In other embodiments, a staged drying manner may be selected to make the dielectric layer in a semi-cured state or lower than the semi-cured state, for example, 2 to 3 stages. As an example of performing the drying treatment in three stages, after the dielectric layer slurry is coated on the surface of the first metal foil layer 11, the first drying temperature is first maintained for a first preset time, then the second drying temperature is maintained for a second preset time, and finally the third drying temperature is maintained for a third preset time, so as to obtain a dielectric layer in a semi-cured state or below the semi-cured state. Wherein, the curing temperature of the dielectric layer is not less than 35 percent of the first drying temperature, and the third drying temperature is less than the second drying temperature and not more than 60 percent of the curing temperature of the dielectric layer. For example, the heating degree is 0.7-2 min in the drying chamber region with the curing temperature (first drying temperature) of 35% of the dielectric layer 13, 2.5-3.6 min in the drying chamber region with the curing temperature (second drying temperature) of 60% of the dielectric layer 13, so that the dielectric layer 13 is in a semi-cured state or lower on the first metal foil layer 11, and finally 0.7-1.5 min in the drying chamber region with the curing temperature (third drying temperature) of 35% of the dielectric layer 13. Alternatively, the stage of the third drying temperature is not performed. As an example of performing the drying treatment in two stages, after the dielectric layer is coated on the surface of the first metal foil layer 11, the dielectric layer is first insulated at a first drying temperature for a first preset time, and then insulated at a second drying temperature for a second preset time, so as to obtain a dielectric layer in a semi-cured state or lower than the semi-cured state. The dielectric layer slurry for manufacturing the dielectric layer 13 adopts special composition components and special process treatment is adopted for the dielectric layer 13, so that the planar capacitor 10 has high stripping force, and the stripping force of the dielectric layer 13 and the two-sided copper foil substrate is basically consistent and stable, and has excellent reliability. The curing temperature of the dielectric layer 13 may be changed according to the different components of the dielectric layer 13, and when the components of the dielectric layer 13 are determined, that is, the components of the dielectric layer slurry are determined, the curing temperature may also be determined.
Step S3: and (3) laminating the first metal foil layer 11 with the medium layer 13 and the second metal foil layer 12, wherein the surface of the first metal foil layer 11 with the medium layer 13 faces the second metal foil layer 12 and is laminated to obtain the planar capacitor 10.
Specifically, the first metal foil layer 11 coated with the dielectric layer 13 on the surface is laminated with the second metal foil layer 12 under a certain temperature and pressure, so that the planar capacitor 10 with high peeling force is obtained. Wherein the pressure of the covering is 3-6 kg/cm2The temperature of the combination can be 100-130 ℃. In an alternative embodiment, the first metal foil layer 11 and the second metal foil layer 12, the surfaces of which are coated with the dielectric layer 13 in a semi-cured state or lower than the semi-cured state, enter the laminating unit 20 (fig. 2) at the same speed, and then are subjected to the laminating process. As shown in fig. 2, the first metal foil layer 11 coated with the dielectric layer 13 on the surface is transferred by a plurality of first transfer rollers 41 and dried through the drying oven 30, and the second metal foil layer 12 without the dielectric layer is transferred by a second transfer roller 42. Wherein the entering speed can be 2-8 m/min. The thickness of the obtained dielectric layer 13 can be 1-20 μm, preferably 12-20 μm. The first metal foil layer 11 is selected from copper foil, nickel foil, aluminum foil, and the like. The second metal foil layer 12 is selected from copper foil, nickel foil, and aluminum foil. Wherein, the thickness of the first metal foil layer 11 or the second metal foil layer 12 can be 9-50 μm. For example, "Medium layer + first layer after exiting drying oven 30The metal foil layer "is laminated with the" second metal foil layer without dielectric layer ", as shown in fig. 2, in the planar capacitor after lamination, the" dielectric layer + first metal foil layer "layer is on the top, and the" second metal foil layer without dielectric layer "is on the bottom in the present embodiment.
Specifically, in this embodiment, the first metal foil 11 and the second metal foil 12 both use copper foils, and a dielectric layer 13 with a certain thickness (20 μm) is coated on a first copper foil substrate (50 μm). Wherein, the dielectric layer 13 is obtained by coating and drying dielectric layer slurry. Specifically, vinylcyclohexene diepoxy resin (260-340 g) is added into an acetone solvent (1400-1600 g), and ultrasonic stirring is carried out for 30min at the temperature of 30 ℃ to obtain a mixed solution of dielectric layer slurry; and adding an inorganic filler barium sodium titanate (650-760 g) into the mixed solution, performing ultrasonic stirring at the temperature of 30 ℃ for 30min, and performing ball milling for 10h to obtain the dielectric layer slurry.
The first copper foil base material coated with the dielectric layer 13 passes through a low-temperature drying box 30 at a constant speed (5 m/min); the heating degree (drying degree) is controlled to be 0.9min in the first drying chamber 31 and the third drying chamber 33 which are both at the curing temperature of 35 percent of the dielectric layer 13 (the first drying temperature and the third drying temperature are both 55 ℃), and 3min in the second drying chamber 32 which is at the curing temperature of 60 percent of the dielectric layer 13 (the second drying temperature is about 94 ℃), so that the dielectric layer 13 is semi-cured or lower than the semi-cured state on the first copper foil substrate.
The first copper foil substrate coated with the semi-cured or less-than-semi-cured dielectric layer 13 passes through the laminating unit 20 (see fig. 2) at a speed of 5m/min and is laminated with the second copper foil substrate (50 μm), and the planar capacitor 10 with high peeling force is finally obtained.
In this embodiment, a Lin' an Feng source electronic PST-F5 peeling strength tester is used to prepare the covered sample into a strip shape with a size of 10mm, the two foils are respectively clamped on two sides of the tester, and the force of the two foils pulling apart is tested. The peeling force between the dielectric layer 13 and the first copper foil substrate of the planar capacitor 10 was about 0.93N/m, and the peeling force between the dielectric layer 13 and the second copper foil substrate was about 0.88N/m. Capacitance (capacitance) of the resulting planar capacitor 10Value) of 1.1nF/cm2. The capacitance testing method comprises the following steps: etching the planar capacitor product to 1cm2The size of the planar capacitor 10 is measured by an LCR meter to directly measure the two poles of the planar capacitor 10, and the capacitance density of the planar capacitor 10 is 1.1nF/cm2(the capacitance of the planar capacitor is proportional to the area).
Through repeated tests, the peeling force between the dielectric layer and the first metal foil layer in the conventional planar capacitor is 0.9-1.0N/mm, the peeling force between the dielectric layer and the second metal foil layer is 0.6-0.7N/mm, and the difference between the two surfaces is at least 0.3N/mm. Under the process conditions of the embodiment, the difference between the two is less than 0.1N/mm, the peeling force between the dielectric layer 13 and the first metal foil layer 11 is 0.9-1.0N/mm, and the peeling force between the dielectric layer 13 and the second metal foil layer 12 is 0.8-0.9N/mm. The planar capacitor 10 of the present embodiment has a high peeling force, and the peeling force of the dielectric layer 13 and the double-sided copper foil substrate is substantially consistent and stable, and has excellent reliability.
[ example two ]
The manufacturing method of the planar capacitor provided by the second embodiment of the present invention is substantially the same as the manufacturing method of the planar capacitor in the first embodiment (fig. 2 to fig. 4), except that in this embodiment, the dielectric layer 13 with a certain thickness (10 μm) is coated on the first copper foil substrate (35 μm). The dielectric layer 13 is obtained by coating dielectric layer slurry on the first copper foil substrate and drying. Specifically, dicyclopentadiene polyol diepoxy resin (360-440 g) is added into butanone solvent (2350-2450 g), and ultrasonic stirring is carried out for 30min at the temperature of 30 ℃ to obtain a dielectric layer slurry mixed solution; and adding inorganic filler lead titanate (660-750 g) into the mixed solution, performing ultrasonic stirring at the temperature of 30 ℃ for 30min, and performing ball milling for 10h to obtain dielectric layer slurry.
The first copper foil base material coated with the dielectric layer 13 passes through a low-temperature drying box 30 at a constant speed (4 m/min); the heating degree (drying degree) is controlled to be 1min in the first drying chamber 31 and the third drying chamber 33 which are both at the curing temperature of 35 percent of the dielectric layer 13 (the first drying temperature and the third drying temperature are both 55 ℃), and 3min in the second drying chamber 32 which is at the curing temperature of 60 percent of the dielectric layer 13 (the second drying temperature is about 94 ℃), so that the dielectric layer 13 is in a semi-cured state or a state lower than the semi-cured state on the first copper foil substrate.
The first copper foil substrate coated with the semi-cured or less-than-semi-cured dielectric layer 13 passes through the laminating unit 20 (see fig. 2) at a speed of 4m/min and is laminated with the second copper foil substrate (35 μm), and the planar capacitor 10 with high peeling force is finally obtained.
In this embodiment, the peeling force between the dielectric layer 13 and the first copper foil substrate in the planar capacitor 10 is about 0.9N/mm, and the peeling force between the dielectric layer 13 and the second copper foil substrate is about 0.86N/mm. The capacitance (capacitance value) of the resulting planar capacitor 10 was 1.9nF/cm2. The capacitance testing method comprises the following steps: etching the planar capacitor product to 1cm2The size of the planar capacitor 10 is measured by an LCR meter to directly measure the two poles of the planar capacitor 10, and the capacitance density of the planar capacitor 10 is 1.9nF/cm2(the capacitance of the planar capacitor is proportional to the area). The planar capacitor 10 of the present embodiment has a high peeling force, and the peeling force of the dielectric layer 13 and the two-sided copper foil substrate is substantially consistent and stable, and has excellent reliability.
It should be understood by those skilled in the art that the rest of the structure and the operation principle of the present embodiment are the same as those of the first embodiment, and are not described herein again.
[ third example ]
The manufacturing method of the planar capacitor provided by the third embodiment of the present invention is substantially the same as the manufacturing method of the planar capacitor in the first embodiment (fig. 2 to fig. 4), except that in this embodiment, the dielectric layer 13 with a certain thickness (5 μm) is coated on the first copper foil substrate (18 μm). The dielectric layer 13 is obtained by coating dielectric layer slurry on the first copper foil substrate and drying. Specifically, 1, 2-epoxycyclohexane and 4, 5-diformic acid epoxy resin (360-450 g) are added into a butanone solvent (1950-2100 g), and ultrasonic stirring is carried out for 30min at the temperature of 30 ℃ to obtain a mixed solution of the dielectric layer slurry; and adding inorganic filler barium titanate (850-960 g) into the mixed solution, performing ultrasonic stirring at the temperature of 30 ℃ for 30min, and performing ball milling for 10h to obtain the dielectric layer slurry.
The first copper foil base material coated with the dielectric layer 13 passes through a low-temperature drying box 30 at a constant speed (6 m/min); the heating degree (drying degree) is controlled to be 1min in the first drying chamber 31 and the third drying chamber 33 which are both at the curing temperature of 35 percent of the dielectric layer 13 (the first drying temperature and the third drying temperature are both 55 ℃), and 3min in the second drying chamber 32 which is at the curing temperature of 60 percent of the dielectric layer 13 (the second drying temperature is about 94 ℃), so that the dielectric layer 13 is in a semi-cured state or a state lower than the semi-cured state on the first copper foil substrate;
the first copper foil substrate coated with the semi-cured or less-than-semi-cured dielectric layer 13 passes through the laminating unit 20 (see fig. 2) at a speed of 6m/min and is laminated with the second copper foil substrate (18 μm), and the planar capacitor 10 with high peeling force is finally obtained.
In this embodiment, the peeling force between the dielectric layer 13 and the first copper foil substrate in the planar capacitor 10 is about 0.98N/m, and the peeling force between the dielectric layer 13 and the second copper foil substrate is about 0.89N/m. The capacitance (capacitance value) of the resulting planar capacitor 10 was 3.5nF/cm2. The capacitance testing method comprises the following steps: etching the planar capacitor product to 1cm2The size of the planar capacitor 10 is measured by an LCR meter to directly measure the two poles of the planar capacitor 10, and the capacitance density of the planar capacitor 10 is 3.5nF/cm2(the capacitance of the planar capacitor is proportional to the area). The planar capacitor 10 of the present embodiment has a high peeling force, and the peeling force of the dielectric layer 13 and the double-sided copper foil substrate is substantially consistent and stable, and has excellent reliability.
It should be understood by those skilled in the art that the rest of the structure and the operation principle of the present embodiment are the same as those of the first embodiment, and are not described herein again.
[ example four ]
The manufacturing method of the planar capacitor provided in the fourth embodiment of the present invention is substantially the same as the manufacturing method of the planar capacitor in the first embodiment (fig. 3 to fig. 4), except that in this embodiment, the dielectric layer 13 with a certain thickness (12 μm) is coated on the first copper foil substrate (12 μm). The dielectric layer 13 is obtained by coating dielectric layer slurry on the first copper foil substrate and drying. Specifically, adding mesityl oxide epoxy resin (260-340 g) into a pentanone solvent (850-950 g), and ultrasonically stirring at 25 ℃ for 35min to obtain a mixed solution of the dielectric layer slurry; and adding inorganic filler strontium lead titanate (360-470 g) into the mixed solution, performing ultrasonic stirring at the temperature of 25 ℃ for 30min, and performing ball milling for 10h to obtain the dielectric layer slurry.
The first copper foil base material coated with the dielectric layer 13 passes through a low-temperature drying box 30 at a constant speed (8 m/min); the heating degree (drying degree) is controlled to be 3.5min in a drying chamber at the curing temperature (drying temperature is 85 ℃) of 55% of the dielectric layer 13, so that the dielectric layer 13 is in a semi-curing state.
The first copper foil substrate coated with the dielectric layer 13 in a cured state passes through the laminating unit 20 (see fig. 2) at a speed of 8m/min and is laminated with the second copper foil substrate (12 μm), and the planar capacitor 10 is finally obtained.
In this embodiment, the peeling force between the dielectric layer 13 and the first copper foil substrate in the planar capacitor 10 is about 0.95N/mm, and the peeling force between the dielectric layer 13 and the second copper foil substrate is about 0.87N/mm. The capacitance (capacitance value) of the resulting planar capacitor 10 was 1.7nF/cm2. The capacitance testing method comprises the following steps: etching the planar capacitor product to 1cm2The size of the planar capacitor 10 is measured by an LCR meter to directly measure the two poles of the planar capacitor 10, and the capacitance density of the planar capacitor 10 is 1.7nF/cm2(the capacitance of the planar capacitor is proportional to the area). The planar capacitor 10 of the present embodiment has a high peeling force, and the peeling force of the dielectric layer 13 and the two-sided copper foil substrate is substantially consistent and stable, and has excellent reliability.
It should be understood by those skilled in the art that the rest of the structure and the operation principle of the present embodiment are the same as those of the first embodiment, and are not described herein again.
In this document, the terms of upper, lower, left, right, front, rear and the like are used to define the structures in the drawings and the positions of the structures relative to each other, and are only used for the sake of clarity and convenience in technical solution. It is to be understood that the use of the directional terms should not be taken to limit the scope of the claims. It is also to be understood that the terms "first" and "second," etc., are used herein for descriptive purposes only and are not to be construed as limiting in number or order.
Although the present invention has been described with reference to the preferred embodiments, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A method for manufacturing a planar capacitor, wherein the planar capacitor (10) comprises a first metal foil layer (11), a second metal foil layer (12) and a dielectric layer (13) disposed between the first metal foil layer (11) and the second metal foil layer (12), the method comprising:
manufacturing dielectric layer slurry for forming the dielectric layer (13);
coating the dielectric layer slurry on the surface of the first metal foil layer (11), and drying the dielectric layer slurry to form a dielectric layer (13) in a semi-cured state or lower than the semi-cured state on the surface of the first metal foil layer (11);
laminating the first metal foil layer (11) attached with the dielectric layer (13) and the second metal foil layer (12), wherein the surface of the first metal foil layer (11) attached with the dielectric layer (13) faces the second metal foil layer (12) and is laminated to obtain the planar capacitor (10);
the dielectric layer (13) comprises epoxy resin, and the epoxy resin is at least one of glycidyl ether type epoxy resin, glycidyl ester type epoxy resin, glycidyl amine type epoxy resin, alicyclic epoxy resin, epoxidized olefin compound, sugarcane polyhydric alcohol epoxy resin and mixed structure epoxy resin.
2. The method for manufacturing a planar capacitor as claimed in claim 1, wherein the dielectric layer (13) further comprises at least one of an inorganic filler, an auxiliary agent and a solvent; the auxiliary agent is at least one of a curing agent, a dispersing agent, a coupling agent, a flatting agent, a defoaming agent and an accelerating agent; the inorganic filler is at least one of barium sodium titanate, barium titanate, copper calcium titanate, strontium titanate, barium strontium titanate, calcium titanate, barium calcium titanate, lead zirconate titanate, lead sodium titanate and lead titanate; the solvent comprises at least one of acetone, pentanone, alcohol and butanone.
3. The method of claim 2, wherein the dielectric layer paste is formed by a method comprising:
adding the epoxy resin into a first solvent, and stirring at the temperature of 20-40 ℃ for 15-35 min to obtain a mixed solution of the dielectric layer slurry;
stirring and dispersing the inorganic filler in a second solvent to obtain a suspension of the dielectric layer slurry, and stirring and dispersing the suspension in the mixed solution;
and adding an auxiliary agent, stirring and mixing uniformly to obtain a mixture of the dielectric layer slurry, and pouring the mixture into a ball milling tank to perform ball milling for 5-15 h at the rotating speed of 100-200 rpm to obtain the dielectric layer slurry.
4. The method for manufacturing a planar capacitor as claimed in claim 3, wherein the mass ratio of the epoxy resin to the first solvent is 1:3 to 1: 6. The mass ratio of the inorganic filler to the second solvent is 1: 2-1: 5.
5. The method of claim 1, wherein the drying the dielectric layer paste comprises:
and heating and drying the dielectric layer slurry at a preset drying temperature, and keeping the temperature for a preset time, wherein the drying temperature is 35-60% of the curing temperature of the dielectric layer slurry, and the preset time is 2-6 min.
6. The method of claim 5, wherein the planar capacitor is first dried at a first temperature for a first predetermined time; preserving the heat at a second drying temperature for a second preset time; and finally, keeping the temperature of the dielectric layer (13) at a third drying temperature for a third preset time to obtain the dielectric layer (13) in a semi-cured state or lower than the semi-cured state, wherein the first drying temperature of the curing temperature of the dielectric layer (13) is more than or equal to 35 percent, and the second drying temperature is more than or equal to 60 percent of the curing temperature of the dielectric layer (13).
7. The method for manufacturing a planar capacitor as claimed in claim 6, wherein the first predetermined time is 0.7-2 min; the second preset time is 0.7-1.5 min; the third preset time is 2.5-3.6 min.
8. The method of claim 1, wherein the step of laminating the first metal foil layer (11) with the dielectric layer (13) attached thereto and the second metal foil layer (12) comprises:
pressing the first metal foil layer (11) and the second metal foil layer (12) attached with the dielectric layer (13) at a preset temperature and a preset pressure to obtain the planar capacitor (10);
the preset temperature is 100-150 ℃, and the preset pressure is 3-6 kg/cm2。
9. The method for manufacturing a planar capacitor as claimed in claim 1, wherein the thickness of the first metal foil layer (11) or the second metal foil layer (12) is 9-50 μm, and the thickness of the dielectric layer (13) is 1-20 μm.
10. A manufacturing device of a planar capacitor, which is applied to the manufacturing method of any one of claims 1 to 9, the manufacturing device comprises a laminating unit (20), a drying box (30), a first transmission roller (41) and a second transmission roller (42), the laminating unit (20) comprises an upper laminating steel roller (21), a rubber roller (22) and a lower laminating steel roller (23), the upper laminating steel roller (21) is attached to the rubber roller (22), the lower laminating steel roller (23) is attached to the rubber roller (22), the drying box (30) is used for heating and drying the dielectric layer (13) on the first metal foil layer (11), and the first metal foil layer (11) with the dielectric layer (13) coated on the surface is transmitted by the first transmission roller (41) and dried by the drying box (30), the second metal foil layer (12) is transported by the second transport roller (42).
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