CN111796292A - On-chip optical phased array scanner with flat output intensity - Google Patents

On-chip optical phased array scanner with flat output intensity Download PDF

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Publication number
CN111796292A
CN111796292A CN202010635401.XA CN202010635401A CN111796292A CN 111796292 A CN111796292 A CN 111796292A CN 202010635401 A CN202010635401 A CN 202010635401A CN 111796292 A CN111796292 A CN 111796292A
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Prior art keywords
waveguide
output
phased array
field
intensity
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时尧成
赵世
陈敬业
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Zhejiang University ZJU
Sunny Optical Zhejiang Research Institute Co Ltd
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Zhejiang University ZJU
Sunny Optical Zhejiang Research Institute Co Ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/484—Transmitters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/491—Details of non-pulse systems
    • G01S7/4911—Transmitters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
    • G02F1/292—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection by controlled diffraction or phased-array beam steering

Abstract

The invention discloses an on-chip optical phased array scanner with flat output intensity. The invention is laser light source signal pass I0A port input waveguide chip; power is equally distributed to each waveguide through a multistage 3dB power divider, and each waveguide controls phase difference among the waveguides by utilizing an independent phase modulator; then the optical field of every waveguide path can be fed into transmitting antenna, and is characterized by that the antenna is formed from curved waveguide array, in which the curved waveguide of upper half zone and curved waveguide of lower half zone are centrally symmetrically distributed, and the far field of the transmitted light can be interfered, and can be formed on different deflection anglesHaving a uniform light field distribution with peak intensity. The invention effectively solves the problem that the peak intensity of the traditional optical phased array light beam is rapidly attenuated along with the increase of the scanning angle, and can meet the application requirements of wide-field-angle scanning laser radar, free space optical communication and the like.

Description

On-chip optical phased array scanner with flat output intensity
Technical Field
The invention belongs to the field of optoelectronic devices, and particularly relates to an on-chip optical phased array scanner with flat output intensity.
Background
The optical phased array can be used in the laser radar, realizes large-angle and high-speed beam scanning, can also select the free space optical transmission angle, realizes data multiplexing in space, and increases the flexibility of an optical communication link.
The optical waveguide on the silicon substrate compatible with the CMOS process can be integrated with a laser to form an integrated chip from a light source to light beam deflection, and meanwhile, the scale integration is supported, so that the miniaturization development of a system is promoted. The optical phased array based on the optical waveguide on the silicon substrate has the characteristics of easiness in large-scale integration, low power consumption, low cost and the like, and has a great application prospect. The optical phased array based light beam deflection structure has the characteristics of small size, light weight, low power consumption and the like, meanwhile, optical communication and optical detection have requirements on light intensity, and the on-chip waveguide optical phased array scanner with flat output intensity has very important significance and practical value.
Disclosure of Invention
It is an object of the present invention to provide an on-chip optical phased array scanner with flat output intensity. The optical phased array antenna based on the symmetrical bent waveguide is designed, and the advantages of easy integration, low energy consumption, low cost and the like of the optical waveguide on the chip are combined, so that the optical phased array antenna has flat and consistent output peak intensity in different light beam deflection ranges of a far field.
The invention provides an on-chip optical phased array scanner with flat output intensity, which comprises the following parts: the power divider comprises an input port (1), a multi-stage 3dB power divider (2), a phase modulator (3), a curved waveguide (4) and an output port (5).
The invention is connected as follows: the input port (1) is connected with the multistage 3dB power divider (2), and each output path of the multistage 3dB power divider (2) is connected with one end of the phase modulator (3); the other end of the phase modulator (3) enters the region of the curved waveguide (4) through the waveguide; the tail end of the bent waveguide (4) is emitted out through the output port (5).
The basic principle of the invention is as follows: laser input light source signal I0The input light source signal I is input through an input port (1), split through an n-stage power splitter (2), and input light source signal I can be obtained0Is equally divided into 2nEach output path of the n-stage power divider (2) is connected with the waveguide; each waveguide is provided with a phase modulator (3) for controlling phase difference among the waveguides, then the optical field of each waveguide path enters a bent waveguide (4) region, an included angle exists between the waveguide direction at the tail end of the bent waveguide (4) and a symmetric axis, after the optical field is emitted through an output port (5), the angle of the far field energy maximum value deviates from the symmetric axis, the angles of the waveguide far field energy maximum values in the upper half region and the lower half region are symmetric about the symmetric axis, and the square of the amplitude sum of the optical field of each waveguide far field hardly changes along with the change of the angle within the range of the far field deflection angle (-31 ℃). By controlling the phase difference of each path, emission peaks which are relatively flat in output intensity can be obtained at different beam deflection angles of a far field.
The input port (1) is connected with a laser and can have the characteristic of on-chip integration.
The n-stage 3dB power divider (2) can equally divide input optical power into 2nA path.
The phase modulator (3) can modulate the phase of an optical field on a path and dynamically control the far field deflection angle of an output light beam.
The bent waveguide (4) can enable the maximum value of the output far-field energy to move towards a large-angle direction, and the distribution of the optical field energy in the far field is adjusted.
And the waveguide output end surfaces of the output ports (5) are not perpendicular to the waveguide direction and are in the same output plane, wherein the centers of the adjacent waveguide output end surfaces are equally spaced.
And a detector is arranged behind the output port (5) and is used for detecting the light field distribution of a far field.
The invention has the beneficial effects that:
the method for introducing the bent waveguide arrangement into the optical phased array antenna is adopted, so that the on-chip optical phased array has the far-field emission peak intensity which does not change along with the deflection angle of the light beam, and the problem of rapid attenuation of the far-field emission peak intensity of the optical phased array along with the increase of the deflection angle is effectively solved. The wide-field-angle scanning laser radar and free space optical communication system can meet application requirements of wide-field-angle scanning laser radar, free space optical communication and the like.
The light beam deflection structure based on the on-chip optical phased array is compatible with a CMOS (complementary metal oxide semiconductor) process, and has the characteristics of compact device structure, easiness in monolithic integration and the like.
Drawings
FIG. 1 is a schematic of the present invention.
Fig. 2 is a graph of relative intensity versus angle of exit light from a curved waveguide in the far field. The upper and lower half correspond to fig. 2(a) and (b), respectively.
Fig. 3 is a simulation result of the intensity distribution of the far-field emitted optical field as a function of the deflection angle of the beam.
In the figure: the power divider comprises an input port (1), a multi-stage 3dB power divider (2), a phase modulator (3), a curved waveguide (4) and an output port (5).
Detailed Description
The invention will be further explained with reference to the drawings.
As shown in fig. 1, an on-chip optical phased array scanner with flat output intensity comprises, in order from left to right: the device comprises an input port (1), a multi-stage power divider (2), a phase modulator (3), a curved waveguide (4) and an output port (5). The laser input light source signal is input through an input port (1), and power is equally divided into 2 parts through an n-stage 3dB power divider (2)nEach waveguide path is provided with a phase modulator (3) which can control the far field deflection angle of the light beam by controlling the phase difference among the paths. The bent waveguide (4) adjusts the distribution of the light field energy in a far field by controlling the angle of the maximum value of the wave-guide-emitted light far field energy, so that the square of the amplitude sum of the light field of each waveguide far field does not change along with the angle, and the flat emission peak of the intensity is output at different deflection angles of the far field.
The relationship between the beam deflection angle of the optical phased array and the phase difference between adjacent waveguides is as follows:
d·sinθ＝ΔΦ·λ/2π (1)
in the formula (1), d is the central interval of adjacent waveguides at the output port (5), theta is the included angle between the deflection direction of the light beam and the symmetry axis, delta phi is the phase difference between the adjacent waveguides at the output port (7), and lambda is the working wavelength.
The n-stage 3dB power divider (2) can equally divide and output incident light power to 2 of the optical phased arraynA transmission waveguide path.
In order to dynamically control the beam deflection direction, a phase modulator (3) is placed on each transmission waveguide path of the optical phased array, and as shown in fig. 1, the phase modulator (3) is placed between the n-stage 3dB power divider (2) and the curved waveguide (4). The expression for the phase change on the path is as follows:
Figure BDA0002568861920000041
in the formula (2), λ is the operating wavelength, Δ neffiI-th and i-1 th waveguide refractive index difference, L, caused by the phase modulator (3)iThe modulation length of the phase modulator of the ith waveguide.
The far field deflection angle of the light beam is determined by the phase difference delta phi between adjacent waveguides, and the maximum intensity value of a far field emission peak at a certain deflection angle is determined by the square curve of the sum of the far field optical field amplitudes of all the waveguides.
According to the principle of multi-beam interference, the far-field light intensity distribution is expressed as follows:
Figure BDA0002568861920000042
the angles theta of the far field light intensity maximum values corresponding to different phase differences delta phi are different and are determined by the formula (1); the light intensity at the deflection angle θ is expressed as follows:
Figure BDA0002568861920000043
in the formula (3), the reaction mixture is,
Figure BDA0002568861920000044
for complex amplitude of the ith waveguide at the output port (5), A in equations (3) and (4)iAnd (alpha) is a function of the amplitude of the far field of the light emitted by the ith waveguide along with the change of the angle alpha, and delta phi is the phase difference between adjacent waveguides at the output port (5).
In order to prevent the far field intensity peak value of the on-chip optical phased array from changing along with the angle change, a bent waveguide (4) is arranged in a waveguide path, and the far field amplitude distribution A of an optical field is adjusted through the bent waveguide (4)i(θ), the angle at which the diffraction intensity peak is located is deviated from the symmetry axis.
Example (b):
taking 8 array elements as an example, adjusting the change curve A of the far field intensity of the emergent light of the single bent waveguide in the upper half area and the lower half area along with the anglei 2(α) is shown in FIGS. 2(a) and (b). The phase difference between array elements is changed, when the light beams have different deflection angles, the far-field emission peak changes along with the change of the light beam deflection angle as shown in fig. 3, and different curves from left to right sequentially correspond to the emission peaks when the phase difference is different. It can be seen from the figure that in the range of-31 deg., no grating lobes occur, and the difference of the maximum values of the emission peaks at different deflection angles is less than 0.05, realizing a waveguide beam deflector with flat output peak intensity.

Claims (5)

1. An on-chip optical phased array scanner with flat output intensity, comprising: the device comprises an input port (1), a multi-stage power divider (2), a phase modulator (3), a curved waveguide (4) and an output port (5);
the input port (1) is connected with the multistage 3dB power divider (2), and each output path of the multistage 3dB power divider (2) is connected with one end of the phase modulator (3); the other end of the phase modulator (3) enters the region of the curved waveguide (4) through the waveguide; the tail end of the bent waveguide (4) is emitted out through the output port (5); the bent waveguide (4) is placed in the waveguide path, and the far-field intensity distribution of the light field is adjusted through the bent waveguide (4), so that the angle of the diffraction intensity peak deviates from the symmetry axis;
laser input light source signal I0The input light source signal I is input through an input port (1), split through an n-stage power splitter (2), and input light source signal I can be obtained0Is equally divided into 2nEach output path of the n-stage power divider (2) is connected with the waveguide; each waveguide is provided with a phase modulator (3) for controlling phase difference among the waveguides, then the optical field of each waveguide path enters a bent waveguide (4) region, an included angle exists between the waveguide direction at the tail end of the bent waveguide (4) and a symmetric axis, after the optical field is emitted through an output port (5), the angle of the far field energy maximum value deviates from the symmetric axis, the angles of the waveguide far field energy maximum values in the upper half region and the lower half region are symmetric about the symmetric axis, and the square of the optical field amplitude sum of each waveguide far field hardly changes along with the change of the angle between the angles of the two maximum values.
2. An on-chip optical phased array scanner with flat output intensity as claimed in claim 1, characterized in that the output end faces of the waveguides of the output ports (5) are not perpendicular to the waveguide direction and are in the same output plane, wherein the output end faces of adjacent waveguides are equally spaced at their centers.
3. An on-chip optical phased array scanner with flat output intensity as claimed in claim 1, wherein the optical phased array has a beam deflection angle related to the phase difference between adjacent waveguides as follows:
d·sinθ＝ΔΦ·λ/2π (1)
in the formula (1), d is the central interval of adjacent waveguides at the output port (5), theta is the included angle between the deflection direction of the light beam and the symmetry axis, delta phi is the phase difference between the adjacent waveguides at the output port (7), and lambda is the working wavelength.
4. An on-chip optical phased array scanner with flat output intensity as claimed in claim 1 wherein the phase variation over the transmission waveguide path is expressed as follows:
Figure FDA0002568861910000021
in the formula (2), λ is the operating wavelength, Δ neffiI-th and i-1 th waveguide refractive index difference, L, caused by the phase modulator (3)iThe modulation length of the phase modulator of the ith waveguide.
5. An on-chip optical phased array scanner with flat output intensity as claimed in claim 1, wherein the far field deflection angle of the light beam is determined by the phase difference Δ Φ between the adjacent waveguides, and the maximum value of the far field emission peak intensity is determined by the square curve of the sum of the far field optical field amplitudes of the waveguides;
the far field light intensity distribution expression is as follows:
Figure FDA0002568861910000022
the angles theta of the far field light intensity maximum values corresponding to different phase differences delta phi are different and are determined by the formula (1); the light intensity at the deflection angle θ is expressed as follows:
Figure FDA0002568861910000023
in the formula (3), the reaction mixture is,
Figure FDA0002568861910000024
for complex amplitude of the ith waveguide at the output port (5), A in equation (3)iAnd (alpha) is a function of the amplitude of the far field of the light emitted by the ith waveguide along with the change of the angle alpha, and delta phi is the phase difference between adjacent waveguides at the output port (5).
CN202010635401.XA 2020-07-03 2020-07-03 On-chip optical phased array scanner with flat output intensity Pending CN111796292A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023115998A1 (en) * 2021-12-22 2023-06-29 苏州旭创科技有限公司 Light beam scanning system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023115998A1 (en) * 2021-12-22 2023-06-29 苏州旭创科技有限公司 Light beam scanning system

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