CN111787475A - Micro-electro-mechanical system microphone and wafer level packaging method thereof - Google Patents
Micro-electro-mechanical system microphone and wafer level packaging method thereof Download PDFInfo
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- CN111787475A CN111787475A CN202010729961.1A CN202010729961A CN111787475A CN 111787475 A CN111787475 A CN 111787475A CN 202010729961 A CN202010729961 A CN 202010729961A CN 111787475 A CN111787475 A CN 111787475A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
- H04R2201/003—Mems transducers or their use
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Abstract
The embodiment of the invention discloses a micro electro mechanical system microphone and a wafer level packaging method thereof, wherein the micro electro mechanical system microphone comprises an MEMS acoustic chip, a communicating component and an ASIC chip which are arranged in a laminated mode; the MEMS acoustic chip comprises a first substrate, wherein a first electrode and a second electrode are arranged on one side, close to the communicating component, of the first substrate; the communication assembly comprises a second substrate, a first through hole, a second through hole, a first wiring and a second wiring, wherein a first conductive structure is arranged in the first through hole, a second conductive structure is arranged in the second through hole, the first conductive structure is electrically connected with the first electrode and the first wiring respectively, and the second conductive structure is electrically connected with the second electrode and the second wiring respectively; the ASIC chip comprises a third substrate, a third electrode and a fourth electrode, wherein the third electrode and the fourth electrode are positioned on one side surface of the third substrate, which is close to the communicating component, the third electrode is electrically connected with the first wiring, and the fourth electrode is electrically connected with the second wiring. The micro-electro-mechanical system microphone is small in size, low in cost and high in preparation efficiency.
Description
Technical Field
The embodiment of the invention relates to the semiconductor technology, in particular to a micro-electro-mechanical system microphone and a wafer level packaging method thereof.
Background
The microphone is a micro-electromechanical system microphone that converts sound signals into electrical signals. Microphones are widely used in mobile phones, computers, cameras, video cameras, and smart home products, and among them, microphones manufactured based on Micro-Electro Mechanical systems (MEMS) technology are easily integrated with CMOS processes and other audio circuits because they can withstand high reflow temperatures, and have the advantages of improved noise cancellation performance and good RF and EMI suppression.
The main structure of the MEMS microphone is as follows: a cavity body formed by a Circuit board and a shell is used as an external packaging structure, an MEMS acoustic chip and an Application Specific Integrated Circuit (ASIC) chip are arranged in the cavity body, and the MEMS acoustic chip and the ASIC chip are electrically connected and are electrically connected with an external working Circuit through a bonding pad on the outer surface of the Circuit board; in addition, the external packaging structure of the MEMS microphone is provided with a sound hole which penetrates through the inside and the outside of the cavity and is used for receiving an external sound signal.
At present, the position relation of the MEMS acoustic chip and the ASIC chip in the cavity is usually parallel arrangement, so that the current packaging process cannot meet the requirement of product miniaturization.
Disclosure of Invention
The embodiment of the invention provides a micro electro mechanical system microphone and a wafer level packaging method thereof.
In a first aspect, an embodiment of the present invention provides a MEMS microphone, including a stacked MEMS acoustic chip, a communication component, and an ASIC chip;
the MEMS acoustic chip comprises a first substrate, wherein a first electrode and a second electrode are arranged on one side, close to the communicating component, of the first substrate;
the communication assembly comprises a second substrate, a first through hole and a second through hole which are arranged in the second substrate, and a first wiring and a second wiring which are positioned on one side of the second substrate far away from the first substrate, wherein a first conductive structure is arranged in the first through hole, a second conductive structure is arranged in the second through hole, the first conductive structure is respectively and electrically connected with the first electrode and the first wiring, and the second conductive structure is respectively and electrically connected with the second electrode and the second wiring;
the ASIC chip comprises a third substrate, a third electrode and a fourth electrode, wherein the third electrode and the fourth electrode are positioned on one side surface of the third substrate, which is close to the communicating component, the third electrode is electrically connected with the first wiring, and the fourth electrode is electrically connected with the second wiring.
Optionally, the ASIC chip further includes at least one fifth electrode on a surface of the third substrate on a side close to the communicating member;
the ASIC chip also comprises at least one third through hole positioned in the third substrate and a third wiring positioned on the inner wall of the third through hole and the surface of one side of the third substrate far away from the communicating component, the third through hole corresponds to the fifth electrode one by one, and the third wiring is electrically connected with the fifth electrode.
Optionally, a cross-sectional shape of the third through via taken along the first surface is trapezoidal, and the first surface is perpendicular to a surface of the third substrate on a side close to the communication component; a protective layer is filled in the third through hole; a passivation layer is disposed between the third wiring and the third substrate.
Optionally, the MEMS acoustic chip further comprises: a vibrating membrane;
the surface of one side, far away from the communicating component, of the first substrate is provided with a first groove, the first substrate comprises a first protruding portion, a second protruding portion and a first connecting portion, the first protruding portion and the second protruding portion are arranged around the first groove, the first connecting portion is used for connecting the first protruding portion and the second protruding portion, the first electrode is arranged on one side, close to the communicating component, of the first protruding portion, the second electrode is arranged on one side, close to the communicating component, of the second protruding portion, the vibrating membrane is arranged between the first protruding portion and the second protruding portion and is parallel to the first connecting portion, and the vibrating membrane is spaced from the first connecting portion by a first preset distance;
the first electrode is electrically connected with the vibrating membrane; the second electrode is electrically connected to the first connection portion.
Optionally, an acoustic cavity is disposed in the second substrate, and a perpendicular projection of the acoustic cavity on the first substrate at least partially overlaps the first groove;
at least one fourth through hole is formed in the vibrating membrane, and at least one fifth through hole is formed in the first connecting portion.
Optionally, the acoustic cavity extends through the second substrate;
the acoustic cavity comprises a first cavity and a second cavity which are communicated with each other, the first cavity is positioned at one side close to the MEMS acoustic chip, the second cavity is positioned at one side far away from the MEMS acoustic chip, and the opening area of the first cavity is larger than that of the second cavity;
the second cavity at least partially exposes electrodes of the ASIC chip surface.
Optionally, the MEMS microphone further comprises: a housing surrounding the ASIC chip, the communication assembly, and the MEMS acoustic chip;
the housing comprises a first housing subsection close to one side of the MEMS acoustic chip and a second housing subsection close to one side of the ASIC chip, and the first housing subsection is provided with a sound inlet hole; the second shell subsection is internally provided with a plurality of fifth electrode leading-out parts, each fifth electrode leading-out part comprises a first leading-out subsection close to one side of the ASIC chip, a second leading-out subsection penetrating through the second shell subsection and a third leading-out subsection far away from one side of the ASIC chip, the second leading-out subsections are respectively and electrically connected with the first leading-out subsection and the third leading-out subsection, the first leading-out subsection is electrically connected with a third wiring, and the third leading-out subsection is electrically connected with an external circuit.
Optionally, a first insulating layer is disposed between the first conductive structure and the sidewall of the first through via; a second insulating layer is arranged between the second conductive structure and the side wall of the second through hole.
In a second aspect, an embodiment of the present invention further provides a wafer level packaging method for a MEMS microphone, including:
forming a MEMS acoustic wafer; the MEMS acoustic wafer comprises a plurality of MEMS acoustic chips arranged in an array, each MEMS acoustic chip comprises a first substrate, and a first electrode and a second electrode are arranged on one side, close to the communicating component, of the first substrate;
forming a connected wafer; the communication wafer comprises a plurality of communication assemblies arranged in an array, each communication assembly comprises a second substrate, a first through hole and a second through hole which are arranged in the second substrate, and a first wiring and a second wiring which are positioned on one side of the second substrate far away from the first substrate, a first conductive structure is arranged in each first through hole, a second conductive structure is arranged in each second through hole, each first conductive structure is electrically connected with each first wiring, and each second conductive structure is electrically connected with each second wiring;
bonding the MEMS acoustic wafer and the communication wafer to electrically connect the first conductive structure with the first electrode and electrically connect the second conductive structure with the second electrode;
forming an ASIC wafer; the ASIC wafer comprises a plurality of ASIC chips arranged in an array mode, and each ASIC chip comprises a third substrate, a third electrode and a fourth electrode, wherein the third electrode and the fourth electrode are positioned on the surface of one side, close to the communicating component, of the third substrate;
cutting the ASIC wafer to obtain a plurality of ASIC chips;
correspondingly mounting a plurality of ASIC chips to one side of the communicated wafer, which is far away from the MEMS acoustic wafer, so that the third electrode is electrically connected with the first wiring, and the fourth electrode is electrically connected with the second wiring;
and cutting the MEMS acoustic wafer and the communication wafer.
Optionally, the ASIC chip further includes at least one fifth electrode on a surface of the third substrate on a side close to the communicating member; the ASIC chip also comprises at least one third through hole positioned in the third substrate and third wiring positioned on the inner wall of the third through hole and the surface of one side of the third substrate far away from the communicating component, the third through hole corresponds to the fifth electrode one by one, and the third wiring is electrically connected with the fifth electrode;
after the MEMS acoustic wafer and the communication wafer are cut, the method further comprises the following steps:
forming a housing; a housing surrounding the ASIC chip, the communication assembly, and the MEMS acoustic chip; the housing comprises a first housing subsection close to one side of the MEMS acoustic chip and a second housing subsection close to one side of the ASIC chip, and the first housing subsection is provided with a sound inlet hole; the second shell subsection is internally provided with a plurality of fifth electrode leading-out parts, each fifth electrode leading-out part comprises a first leading-out subsection close to one side of the ASIC chip, a second leading-out subsection penetrating through the second shell subsection and a third leading-out subsection far away from one side of the ASIC chip, the second leading-out subsections are respectively and electrically connected with the first leading-out subsection and the third leading-out subsection, the first leading-out subsection is electrically connected with a third wiring, and the third leading-out subsection is electrically connected with an external circuit.
The MEMS microphone provided by the embodiment of the invention is additionally provided with the communicating component, and the electric connection between the MEMS acoustic chip and the ASIC chip is realized by utilizing the conductive structure arranged in the through hole of the communicating component and the wiring arranged on the surface of the communicating component. According to the MEMS microphone provided by the embodiment of the invention, the ASIC chip, the communication component and the MEMS acoustic chip are arranged in a stacked manner, and the MEMS acoustic chip and the ASIC chip are electrically connected through the communication component, so that the problems of size, cost, preparation efficiency and the like caused by the fact that the MEMS acoustic chip and the ASIC chip are arranged in parallel and are electrically connected through gold wires in the prior art are solved, and the MEMS microphone has the advantages of small size, low cost, high preparation efficiency and the like; in addition, the size of the existing ASIC chip is usually smaller than that of the MEMS chip, the scheme realizes the electric connection between the conductive structure and the ASIC chip through the wiring arranged on one side of the communication component close to the ASIC chip, so that the redesign of the ASIC chip with the size consistent with that of the MEMS acoustic chip can be avoided, the electric communication with the MEMS acoustic chip can be realized under the condition of using the small-size ASIC chip, the cost increase can be avoided, and the practicability is higher.
Drawings
Fig. 1 is a schematic structural diagram of a MEMS microphone according to an embodiment of the present invention;
fig. 2 is a schematic top view of the MEMS microphone shown in fig. 1;
fig. 3 is a schematic structural diagram of a MEMS microphone according to another embodiment of the present invention;
fig. 4 is a flowchart illustrating a wafer level packaging method for a MEMS microphone according to an embodiment of the present invention;
fig. 5-10 are packaging flow diagrams corresponding to the wafer level packaging method shown in fig. 4.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Fig. 1 is a schematic structural diagram of a MEMS microphone according to an embodiment of the present invention, and referring to fig. 1, the MEMS microphone 10 includes a stacked MEMS acoustic chip 100, a communication component 200, and an ASIC chip 300; the MEMS acoustic chip 100 includes a first substrate 101, and a first electrode 102 and a second electrode 103 are provided on a side of the first substrate 101 close to the communicating member 200; the interconnection component 200 includes a second substrate 201, a first through via 202 and a second through via 203 disposed in the second substrate 201, and a first wiring 204 and a second wiring 205 disposed on a side of the second substrate 201 away from the first substrate 101, wherein a first conductive structure 206 is disposed in the first through via 202, a second conductive structure 207 is disposed in the second through via 203, the first conductive structure 206 is electrically connected to the first electrode 102 and the first wiring 204, and the second conductive structure 207 is electrically connected to the second electrode 103 and the second wiring 205; the ASIC chip 300 includes a third substrate 301, and a third electrode 302 and a fourth electrode 303 on a surface of the third substrate 301 on a side close to the via assembly 200, the third electrode 302 being electrically connected to the first wiring 204, and the fourth electrode 303 being electrically connected to the second wiring 205.
Illustratively, the MEMS microphone 10 may be a microphone, such as a MEMS microphone, capable of converting a sound signal into an electrical signal. The MEMS acoustic chip 100 can collect a sound signal in real time and convert the sound signal into a primary electrical signal; the ASIC chip 300 is electrically connected to the MEMS acoustic chip 100, and is configured to further process the primary electrical signal output by the MEMS acoustic chip 100 and output the processed signal to an external working circuit, for example, the primary electrical signal may be subjected to operational amplification processing by the ASIC chip 300. The structure of the MEMS acoustic chip 100 and the ASIC chip 300 according to the embodiment of the present invention is not limited, and those skilled in the art may select any known MEMS acoustic chip 100 and ASIC chip 300. Illustratively, the material of the first substrate 101 and the third substrate 301 may be silicon.
The first electrode 102 and the second electrode 103 are output ends of the MEMS acoustic chip 100, the third electrode 302 and the fourth electrode 303 are input ends of the ASIC chip 300, the first electrode 102 is electrically connected to the third electrode 302, and the second electrode 103 is electrically connected to the fourth electrode 303, so that the MEMS acoustic chip 100 and the ASIC chip 300 can be electrically connected. The specific pins of the first electrode 102, the second electrode 103, the third electrode 302, and the fourth electrode 303 in the corresponding chip are not limited, and may be set according to the type of the selected chip.
It should be noted that, in the present embodiment, only the first electrode 102 and the third electrode 302, and the second electrode 103 and the fourth electrode 303 are taken as corresponding electrically connected pins in the MEMS acoustic chip 100 and the ASIC chip 300 for illustration, the number of the electrodes that are correspondingly electrically connected with each other is not limited to two groups according to different chip types, and the embodiment of the present invention does not limit this.
In the prior art, an MEMS acoustic chip and an ASIC chip are arranged side by side, and the electrodes corresponding to each other are electrically connected by gold wire bonding, so that there are problems of large volume of the MEMS microphone, high production cost, low preparation efficiency, and the like. In the embodiment of the present invention, the communication component 200 is provided, so that the ASIC chip 300, the communication component 200, and the MEMS acoustic chip 100 are sequentially stacked, and the communication component 200 is used to electrically connect the MEMS acoustic chip 100 and the ASIC chip 300, thereby reducing the volume of the MEMS microphone 10.
Specifically, the first through via 202 and the second through via 203 are disposed in the second substrate 201 of the interconnect assembly 200, the first conductive structure 206 and the second conductive structure 207 are disposed in the first through via 202 and the second through via 203, respectively, and the first wiring 204 and the second wiring 205 are disposed on the surface of the second substrate 201 near the ASIC chip 300, such that the first wiring 204 is electrically connected to the first conductive structure 206, and the second wiring 205 is electrically connected to the second conductive structure 207, such that the first conductive structure 206 is electrically connected to the first electrode 102 in an aligned manner, and the first wiring 204 is electrically connected to the third electrode 302 in an aligned manner, thereby electrically connecting the first electrode 102 to the third electrode 302; the second conductive structure 207 and the second electrode 103 are electrically connected in a counterpoint manner, and the second wiring 205 and the fourth electrode 303 are electrically connected in a counterpoint manner, so that the second electrode 103 and the fourth electrode 303 can be electrically connected, the problems of efficiency and cost caused by a gold wire bonding process are solved, the cost of the MEMS microphone 10 is lower, and the preparation efficiency is higher.
Illustratively, the second substrate 201 may be a silicon substrate. Preferably, the material of the second substrate 201 is high-resistance silicon, so that the parasitic capacitance of the communication component 200 can be reduced, and the performance of the MEMS microphone can be improved. For example, the material of the first conductive structure 206 and the second conductive structure 207 may be conductive polysilicon or a metal conductive pillar, which is not limited in this embodiment of the present invention. Specifically, the Through Via and the conductive structure may be formed in the second substrate 201 by using a Through Silicon Via (TSV) technology. For example, as shown in fig. 1, the second substrate 201 may be provided with the same size as the first substrate 101, and the first through via 202 and the second through via 203 may be provided vertically in the second substrate 201 at positions corresponding to the first electrode 102 and the second electrode 103, and the first conductive structure 206 may be formed in the first through via 202 and the second conductive structure 207 may be formed in the second through via 203, so as to electrically communicate the MEMS acoustic chip 100 and the ASIC chip 300 in the vertical direction. In addition, referring to fig. 1, an electrode 208 may be formed on the first conductive structure 206, an electrode 209 may be formed on the second conductive structure 207, so that the first conductive structure 206 is electrically connected to the first electrode 102 by para-bonding the electrode 208 to the first electrode 102, and the second conductive structure 207 is electrically connected to the second electrode 103 by para-bonding the electrode 209 to the second electrode 103. Similarly, electrode structures bonded to the third electrode 302 and the fourth electrode 303 in opposite positions may be prepared on the first wiring 204 and the second wiring 205, which is not described herein again.
In addition, the size of the existing ASIC chip 300 is generally smaller than that of the MEMS acoustic chip 100, and the present solution implements the electrical connection of the conductive structure and the ASIC chip 300 through the first wiring 204 and the second wiring 205 disposed on one side of the second substrate 201 close to the ASIC chip 300, so that the redesign of the ASIC chip in conformity with the size of the MEMS acoustic chip can be avoided, the electrical connection with the MEMS acoustic chip can be implemented in the case of using the small-sized ASIC chip, so that the increase of the cost can be avoided, and thus the practicability is higher.
The MEMS microphone provided by the embodiment of the invention is additionally provided with the communicating component, and the electric connection between the MEMS acoustic chip and the ASIC chip is realized by utilizing the conductive structure arranged in the through hole of the communicating component and the wiring arranged on the surface of the communicating component. According to the MEMS microphone provided by the embodiment of the invention, the ASIC chip, the communication component and the MEMS acoustic chip are arranged in a stacked manner, and the MEMS acoustic chip and the ASIC chip are electrically connected through the communication component, so that the problems of size, cost, preparation efficiency and the like caused by the fact that the MEMS acoustic chip and the ASIC chip are arranged in parallel and are electrically connected through gold wires in the prior art are solved, and the MEMS microphone has the advantages of small size, low cost, high preparation efficiency and the like; in addition, the MEMS microphone provided by the embodiment of the invention can adopt the existing small-sized ASIC chip, and a chip with the same size with the MEMS does not need to be redesigned, so that the practicability is higher.
On the basis of the above embodiment, the structure of the MEMS microphone 10 will be further described below.
Referring to fig. 1, optionally, a first insulating layer 210 is disposed between the first conductive structure 206 and the sidewall of the first through via 202; a second insulating layer 211 is disposed between the second conductive structure 207 and the sidewall of the second through via 203.
The first insulating layer 210 is used to isolate the first conductive structure 206 from the second substrate 201, and the second insulating layer 211 is used to isolate the second conductive structure 207 from the second substrate 201, so that the leakage current of the communication component 200 can be further reduced, and the performance of the MEMS microphone 10 can be improved. Illustratively, the material of the first and second insulating layers 210 and 211 may be SiO2。
With continued reference to fig. 1, optionally, the ASIC chip 300 further includes at least one fifth electrode 304 on a surface of the third substrate 301 on a side thereof adjacent to the communication assembly 200; the ASIC chip 300 further includes at least one third through via in the third substrate 301, and a third wire 306 on an inner wall of the third through via and a surface of the third substrate 301 on a side away from the communicating member 200, the third through via corresponds to the fifth electrode 304 one to one, and the third wire 306 is electrically connected to the fifth electrode 304.
The fifth electrode 304 refers to a pin of the ASIC chip 300 electrically connected to an external circuit, i.e., an output terminal of the ASIC chip 300, and may be set according to a chip model. Since the circuit area 305 of the ASIC chip 300 and the plurality of fifth electrodes 304 at the output end thereof are located on the side of the third substrate 301 close to the through component 200, in order to electrically connect the ASIC chip 300 with an external circuit, in the embodiment of the present invention, third through vias are disposed in the third substrate 301, which correspond to the fifth electrodes 304 one to one, and third wirings 306 are disposed on the inner walls of the third through vias and the surface of the third substrate 301 far from the through component 200, so that the third wirings 306 are electrically connected with the fifth electrodes 304, and the fifth electrodes 304 are extended to the lower surface of the third substrate 301 by the third wirings 306, so as to electrically connect the ASIC chip 300 with the external circuit in the following step.
With continued reference to fig. 1, optionally, the cross-sectional shape of the third through via taken along the first surface is trapezoidal, and the first surface is perpendicular to the surface of the third substrate 301 on the side close to the communication component 200; the third through via is filled with a protective layer 307; a passivation layer 308 is provided between the third wiring 306 and the third substrate 301.
Providing the third through via with a trapezoidal cross-sectional shape facilitates forming the third wiring 306 on the side wall of the third through via. Since the third substrate 301 is mostly a silicon substrate, the passivation layer 308 is disposed between the third wiring 306 and the third substrate 301, which can perform an insulating function and improve product performance. Illustratively, the material of the passivation layer 308 may be SiO2. Through pack the protective layer 307 in the third through hole, for example, solder mask, can avoid third to walk to lead to the short circuit with other metal, soldering tin or the contact of electrically conductive object to can prevent that steam etc. in the environment from corroding third wiring 306, can improve product property ability.
With continued reference to fig. 1, optionally, the MEMS acoustic chip 100 further comprises: a diaphragm 104; a first groove is formed in a surface of a side of the first substrate 101 away from the communication component 200, the first substrate 101 includes a first protrusion 1011, a second protrusion 1012 surrounding the first groove, and a first connection 1013 connecting the first protrusion 1011 and the second protrusion 1012, the first electrode 102 is disposed on a side of the first protrusion 1011 close to the communication component 200, the second electrode 103 is disposed on a side of the second protrusion 1012 close to the communication component 200, the diaphragm 104 is disposed between the first protrusion 1011 and the second protrusion 1012 and parallel to the first connection 1013, and the diaphragm 104 is spaced from the first connection 1013 by a first predetermined distance; the first electrode 102 is electrically connected to the diaphragm 104; the second electrode 103 is electrically connected to the first connection part 1013.
Fig. 2 is a schematic top view of the MEMS microphone shown in fig. 1, and fig. 1 shows a cross-sectional structure of the MEMS acoustic chip 100 taken along AA' in fig. 2. As can be seen from fig. 1 and 2, the first protrusion 1011, the second protrusion 1012 and the first connection portion 1013 are an integral structure, and after the first recess is formed on the first substrate 101, the diaphragm 104 may be formed in the first recess, so that the diaphragm 104 and the first connection portion 1013 are arranged in parallel. Illustratively, the material of the diaphragm 104 may be silicon. The first preset distance between the diaphragm 104 and the first connection part 1013 may be a micrometer-scale distance. The diaphragm 104 and the first connection part 1013 form a capacitor structure, the diaphragm 104 serves as the top plate of the capacitor, and the first connection part 1013 serves as the back plate of the capacitor. In this way, when a sound is emitted from the outside, a sound pressure signal is generated, and the sound pressure signal acts on the highly sensitive diaphragm 104 to change the distance between the diaphragm 104 and the first connection part 1013, thereby causing a change in capacitance. Since the first electrode 102 is electrically connected to the diaphragm 104 and the second electrode 103 is electrically connected to the first connection part 1013 (not shown in fig. 1), the capacitance change can be transmitted to the ASIC chip 300 through the first electrode 102 and the second electrode 103 to convert the capacitance change into a change of a voltage signal, and the voltage signal is amplified and then output to an external circuit through the fifth electrode 304.
With continued reference to fig. 1, optionally, an acoustic cavity 212 is disposed in the second substrate 201, and a perpendicular projection of the acoustic cavity 212 on the first substrate 101 at least partially overlaps the first recess; at least one fourth through-hole 1041 is provided in the diaphragm 104, and at least one fifth through-hole 105 is provided in the first connection part 1013.
By providing the acoustic cavity 212 in the second substrate 201, an acoustic resonant cavity may be provided for the MEMS microphone 10, such that the signal-to-noise ratio of the MEMS microphone 10 meets specification requirements. The fourth through hole in the diaphragm 104 and the fifth through hole 105 in the first connecting portion 1013 allow sound to be transmitted to the acoustic cavity 212 through the through holes, and in addition, the fourth through hole 1041 and the fifth through hole 105 are provided to exhaust hot air during the product packaging process, thereby preventing the product quality from being affected.
Fig. 3 is a schematic structural diagram of a MEMS microphone according to another embodiment of the present invention, and the structure of the MEMS microphone 10 is further detailed on the basis of the above embodiment. Referring to fig. 3, optionally, an acoustic cavity 212 extends through the second substrate 201; the acoustic cavity 212 includes a first cavity and a second cavity which are communicated with each other, the first cavity is located at one side close to the MEMS acoustic chip 100, the second cavity is located at one side far away from the MEMS acoustic chip 100, and the opening area of the first cavity is larger than that of the second cavity; the second cavity at least partially exposes the electrodes of the surface of the ASIC chip 300.
This arrangement allows the volume of the acoustic cavity 212 to be enlarged, further improving the signal-to-noise ratio of the MEMS microphone 10, compared to the structure of the acoustic cavity 212 shown in fig. 1. In addition, when the acoustic cavity 212 is configured as shown in fig. 1, in order to avoid the second substrate 201 of the communication module 200 directly contacting the electrodes or other conductive structures on the surface of the ASIC chip 300, a support structure (not shown in fig. 1) is often required on the upper surface of the ASIC chip 300. In this embodiment, the second cavity exposes the electrode on the surface of the ASIC chip 300, so that the above situation can be avoided, and a supporting structure is not required.
With continued reference to fig. 3, optionally, the MEMS microphone 10 further comprises: a housing surrounding the ASIC chip 300, the communication member 200, and the MEMS acoustic chip 100; the housing comprises a first housing section 401 adjacent to the side of the MEMS acoustic chip 100 and a second housing section 402 adjacent to the side of the ASIC chip 300, the first housing section 401 being provided with a sound inlet 4011; the second housing section 402 is provided with a plurality of fifth electrode lead-out portions 403, the fifth electrode lead-out portions 403 include a first lead-out section 4031 on the side close to the ASIC chip 300, a second lead-out section 4032 penetrating the second housing section 402, and a third lead-out section 4033 on the side away from the ASIC chip 300, the second lead-out section 4032 is electrically connected to the first lead-out section 4031 and the third lead-out section 4033, respectively, the first lead-out section 4031 is electrically connected to the third wiring 306, and the third lead-out section 4033 is electrically connected to an external circuit.
The fifth electrode lead-out portion 403 is used for leading the fifth electrode 304 to an external circuit. After the fifth electrodes 304 are electrically connected to the fifth electrode lead-outs 403 in a one-to-one correspondence, the first housing section 401 and the first substrate 101 (and/or the second housing section 402) may be fixed by means of glue 500. In this way, sound can be sensed by the diaphragm 104 through the sound inlet hole 4011, causing a capacitance change, which can be output to an external circuit by the fifth electrode lead 403 after being processed by the ASIC chip 300.
Based on the same inventive concept, an embodiment of the present invention further provides a wafer-level packaging method for an MEMS microphone, which is used to prepare the MEMS microphone provided in the foregoing embodiment, and therefore, the wafer-level packaging method for an MEMS microphone provided in the embodiment of the present invention has the technical effects similar to those of the technical solutions in any of the foregoing embodiments, and the explanations of the structures and terms that are the same as or correspond to those of the foregoing MEMS microphone embodiments are not repeated herein.
Fig. 4 is a schematic flow chart of a wafer-level packaging method for a MEMS microphone according to an embodiment of the present invention, fig. 5-10 are packaging flow charts corresponding to the wafer-level packaging method shown in fig. 4, and a manufacturing process of the MEMS microphone is described below with reference to fig. 4-10. Referring to fig. 4, the packaging method includes the steps of:
s21, forming the MEMS acoustic wafer; the MEMS acoustic wafer comprises a plurality of MEMS acoustic chips arranged in an array mode, each MEMS acoustic chip comprises a first substrate, and a first electrode and a second electrode are arranged on one side, close to the communicating component, of the first substrate.
Fig. 5 shows the structure of the MEMS acoustic wafer, and referring to fig. 5, the MEMS acoustic chip 100 includes a diaphragm 104 in addition to the above structure; a first groove is formed in a surface of a side of the first substrate 101 away from the communication component 200, the first substrate 101 includes a first protrusion 1011, a second protrusion 1012 surrounding the first groove, and a first connection 1013 connecting the first protrusion 1011 and the second protrusion 1012, the first electrode 102 is disposed on a side of the first protrusion 1011 close to the communication component 200, the second electrode 103 is disposed on a side of the second protrusion 1012 close to the communication component 200, the diaphragm 104 is disposed between the first protrusion 1011 and the second protrusion 1012 and parallel to the first connection 1013, and the diaphragm 104 is spaced from the first connection 1013 by a first predetermined distance; the first electrode 102 is electrically connected to the diaphragm 104; the second electrode 103 is electrically connected to the first connection part 1013. The preparation method of the MEMS acoustic wafer is not limited in the embodiment of the invention, and can be designed by a person skilled in the art.
S22, forming a connected wafer; the communicating wafer comprises a plurality of communicating assemblies arranged in an array, each communicating assembly comprises a second substrate, a first through hole and a second through hole which are arranged in the second substrate, and a first wiring and a second wiring which are positioned on one side, far away from the first substrate, of the second substrate, a first conductive structure is arranged in each first through hole, a second conductive structure is arranged in each second through hole, each first conductive structure is electrically connected with each first wiring, and each second conductive structure is electrically connected with each second wiring.
Fig. 6 shows a structure of the through wafer, and referring to fig. 6, in addition to the above structure, a first insulating layer 210 is further disposed between the first conductive structure 206 and the sidewall of the first through via 202, and a second insulating layer 211 is further disposed between the second conductive structure 207 and the sidewall of the second through via 203, so as to reduce the parasitic capacitance and the leakage current of the through device 200. The through wafer can be mainly prepared by the TSV technology. Specifically, when a connected wafer is prepared, a first through via 202 and a second through via 203 are etched in a second substrate 201 by using a dry deep silicon etching process, then a first insulating layer 210 and a second insulating layer 211 are prepared on the inner wall of the through via by using a thermal oxygen or vapor deposition process, and then a first conductive structure 206 and a second conductive structure 207 are deposited on the inner wall of the insulating layer. Finally, in order to make it possible to realize the electrical communication between the MEMS acoustic chip 100 and the ASIC chip 300 in the vertical direction using the small-sized ASIC chip 300, and to improve the utility of the MEMS microphone, the first wiring 204 and the second wiring 205 are formed on the surface of the second substrate 201 on the side close to the ASIC chip 300.
Besides, optionally, an acoustic cavity 212 may be further provided in the second substrate 201, such that a perpendicular projection of the acoustic cavity 212 on the first substrate 101 at least partially overlaps the first recess, and at least one fourth through via 1041 is provided in the diaphragm 104 and at least one fifth through via 105 is provided in the first connection 1013, so as to improve a signal-to-noise ratio of the MEMS microphone. Preferably, the acoustic cavity 212 penetrates through the second substrate 201, the acoustic cavity 212 includes a first cavity and a second cavity which are communicated with each other, the first cavity is located at a side close to the MEMS acoustic chip 100, the second cavity is located at a side far from the MEMS acoustic chip 100, an opening area of the first cavity is larger than an opening area of the second cavity, and the second cavity at least partially exposes the electrode on the surface of the ASIC chip 300.
And S23, bonding the MEMS acoustic wafer and the communication wafer, and electrically connecting the first conductive structure with the first electrode and electrically connecting the second conductive structure with the second electrode.
Referring to fig. 7, the MEMS acoustic wafer and the communication wafer may be bonded using a wafer level packaging process. For example, the bonding process may be a thermal bonding process, or may also be another bonding process, which is not limited in this embodiment of the present invention.
S24, forming an ASIC wafer; the ASIC wafer comprises a plurality of ASIC chips arranged in an array mode, and the ASIC chips comprise a third substrate, a third electrode and a fourth electrode, wherein the third electrode and the fourth electrode are located on the surface of one side, close to the communicating component, of the third substrate.
Fig. 8 shows a structure of an ASIC wafer, and referring to fig. 8, the ASIC chip 300 further includes, in addition to the above structure, at least one fifth electrode 304 on a surface of a side of the third substrate 301 adjacent to the communication module 200; the ASIC chip 300 further includes at least one third through via in the third substrate 301, and a third wire 306 on an inner wall of the third through via and a surface of the third substrate 301 on a side away from the communicating member 200, the third through via corresponds to the fifth electrode 304 one to one, and the third wire 306 is electrically connected to the fifth electrode 304. Preferably, the cross-sectional shape of the third through via taken along a first surface perpendicular to a surface of the third substrate 301 on a side close to the communicating member 200 is trapezoidal; the third through via is filled with a protective layer 307; a passivation layer is provided between the third wiring 306 and the third substrate 301.
Specifically, the ASIC wafer may be prepared by the following steps: first, a temporary bonding is performed on a side surface of the ASIC wafer where the circuit region and the electrode are formed to protect the circuit region from a subsequent process. Then, the third substrate 301 is thinned, and third through holes corresponding to the fifth electrodes 304 one to one are etched. Next, a passivation layer 308 is formed on the inner wall of the third through via and a surface of the third substrate 301 away from the interconnect assembly 200, a metal conductive layer is deposited on the surface of the passivation layer 308, and the metal conductive layer is patterned (re-wiring process) to form a third wiring 306. Finally, the protective layer 307 is filled, and a part of the third wiring 306 for electrical connection with the fifth electrode lead-out portion 403 is exposed by a photolithography process.
And S25, cutting the ASIC wafer to obtain a plurality of ASIC chips.
Specifically, a plurality of ASIC chips 300 can be obtained by dicing the ASIC wafer along the dotted lines shown in fig. 8.
And S26, correspondingly mounting the ASIC chips to one side of the communication wafer, which is far away from the MEMS acoustic wafer, so that the third electrode is electrically connected with the first wiring, and the fourth electrode is electrically connected with the second wiring.
Referring to fig. 9, a plurality of ASIC chips 300 are correspondingly mounted to a side of the communication wafer facing away from the MEMS acoustic wafer. Specifically, a plurality of ASIC chips 300 may be correspondingly attached to a connected wafer, and then the third electrode 302 and the first wiring 204, and the fourth electrode 303 and the second wiring 205 are bonded, so that the third electrode 302 is electrically connected to the first wiring 204, and the fourth electrode 303 is electrically connected to the second wiring 205. For example, the bonding process may be a thermal bonding, such as a reflow soldering process, or may be other bonding and bonding processes, which is not limited in this embodiment of the present invention.
In summary, according to the wafer-level packaging method of the MEMS microphone provided by the embodiment of the present invention, the MEMS acoustic wafer and the communication wafer are wafer-level packaged, and the single ASIC chip is attached to the side of the communication wafer away from the MEMS acoustic wafer in an aligned manner, so that the MEMS acoustic chip and the ASIC chip are electrically connected in the vertical direction. Compared with the packaging method for realizing parallel electrical communication between the two by adopting the gold wire bonding process in the prior art, the scheme can reduce the production cost, improve the production efficiency and effectively reduce the volume of the MEMS microphone. Besides, the scheme can realize the electrical communication between the MEMS acoustic chip 100 and the ASIC chip 300 in the vertical direction under the condition of using the small-sized ASIC chip 300, and is favorable for improving the practicability of the MEMS microphone.
And S27, cutting the MEMS acoustic wafer and the communication wafer.
Referring to fig. 9, after the MEMS acoustic wafer and the communication wafer are cut along the dotted line shown in fig. 9, the MEMS microphone shown in fig. 10 is obtained. After that, a housing may also be formed, the specific structure of which is shown in fig. 3, see fig. 3, the housing surrounding the ASIC chip 300, the communication member 200, and the MEMS acoustic chip 100; the housing comprises a first housing section 401 adjacent to the side of the MEMS acoustic chip 100 and a second housing section 402 adjacent to the side of the ASIC chip 300, the first housing section 401 being provided with a sound inlet 4011; the second housing section 402 is provided with a plurality of fifth electrode lead-out portions 403, the fifth electrode lead-out portions 403 include a first lead-out section 4031 on the side close to the ASIC chip 300, a second lead-out section 4032 penetrating the second housing section 402, and a third lead-out section 4033 on the side away from the ASIC chip 300, the second lead-out section 4032 is electrically connected to the first lead-out section 4031 and the third lead-out section 4033, respectively, the first lead-out section 4031 is electrically connected to the third wiring 306, and the third lead-out section 4033 is electrically connected to an external circuit.
For example, when forming the housing, the third wiring 306 in the MEMS microphone shown in fig. 10 and the fifth electrode lead 403 in the second housing section 402 are mounted in a one-to-one correspondence, and then the first housing section 401 with the sound inlet 4011 is attached to the second housing section 402 to form the housing. Illustratively, the MEMS microphone 10 and its housing shown in fig. 10 may be fixed and sealed by glue 500.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. A microphone of a micro electro mechanical system is characterized by comprising an acoustic chip of the micro electro mechanical system, a communication component and a special application integrated circuit chip which are arranged in a laminated mode;
the micro-electro-mechanical system acoustic chip comprises a first substrate, wherein a first electrode and a second electrode are arranged on one side, close to the communicating component, of the first substrate;
the communication assembly comprises a second substrate, a first through hole and a second through hole which are arranged in the second substrate, and a first wiring and a second wiring which are positioned on one side of the second substrate far away from the first substrate, wherein a first conductive structure is arranged in the first through hole, a second conductive structure is arranged in the second through hole, the first conductive structure is respectively and electrically connected with the first electrode and the first wiring, and the second conductive structure is respectively and electrically connected with the second electrode and the second wiring;
the ASIC chip comprises a third substrate, and a third electrode and a fourth electrode on the surface of the third substrate on the side close to the communication component, wherein the third electrode is electrically connected with the first wiring, and the fourth electrode is electrically connected with the second wiring.
2. The mems microphone of claim 1, wherein the asic chip further comprises at least one fifth electrode on a side surface of the third substrate adjacent to the communicating component;
the ASIC chip further comprises at least one third through hole in the third substrate and a third wire on the inner wall of the third through hole and the surface of one side of the third substrate, which is far away from the communicating component, wherein the third through hole corresponds to the fifth electrode one by one, and the third wire is electrically connected with the fifth electrode.
3. The mems microphone of claim 2, wherein the third through via has a trapezoidal cross-sectional shape taken along a first surface perpendicular to a surface of the third substrate on a side close to the communicating member; a protective layer is filled in the third through hole; a passivation layer is disposed between the third wiring and the third substrate.
4. The mems microphone of claim 1, wherein the mems acoustic chip further comprises: a vibrating membrane;
a first groove is formed in the surface of one side, away from the communicating component, of the first substrate, the first substrate comprises a first protruding portion and a second protruding portion which surround the first groove, and a first connecting portion which connects the first protruding portion and the second protruding portion, the first electrode is arranged on one side, close to the communicating component, of the first protruding portion, the second electrode is arranged on one side, close to the communicating component, of the second protruding portion, the vibrating membrane is arranged between the first protruding portion and the second protruding portion and is parallel to the first connecting portion, and the vibrating membrane is spaced from the first connecting portion by a first preset distance;
the first electrode is electrically connected with the vibrating membrane; the second electrode is electrically connected to the first connection portion.
5. The mems microphone of claim 4, wherein an acoustic cavity is disposed in the second substrate, and a perpendicular projection of the acoustic cavity onto the first substrate at least partially overlaps the first recess;
at least one fourth through hole is formed in the vibrating membrane, and at least one fifth through hole is formed in the first connecting portion.
6. The mems microphone of claim 5, wherein the acoustic cavity extends through the second substrate;
the acoustic cavity comprises a first cavity and a second cavity which are communicated with each other, the first cavity is positioned at one side close to the MEMS acoustic chip, the second cavity is positioned at one side far away from the MEMS acoustic chip, and the opening area of the first cavity is larger than that of the second cavity;
the second cavity at least partially exposes the electrode on the surface of the ASIC chip.
7. The mems microphone of claim 2, further comprising: a housing surrounding the ASIC chip, the communication assembly, and the MEMS acoustic chip;
the shell comprises a first shell subsection and a second shell subsection, the first shell subsection is close to one side of the MEMS acoustic chip, the second shell subsection is close to one side of the ASIC chip, and a sound inlet hole is formed in the first shell subsection; the second housing subsection is provided with a plurality of fifth electrode leading-out parts, each fifth electrode leading-out part comprises a first leading-out subsection close to one side of the ASIC chip, a second leading-out subsection penetrating through the second housing subsection and a third leading-out subsection far away from one side of the ASIC chip, the second leading-out subsections are respectively and electrically connected with the first leading-out subsection and the third leading-out subsection, the first leading-out subsection is electrically connected with the third wiring, and the third leading-out subsection is electrically connected with an external circuit.
8. The mems microphone of claim 1, wherein a first insulating layer is disposed between the first conductive structure and a sidewall of the first through via; and a second insulating layer is arranged between the second conductive structure and the side wall of the second through hole.
9. A wafer level packaging method of a micro electro mechanical system microphone is characterized by comprising the following steps:
forming a micro-electro-mechanical system acoustic wafer; the MEMS acoustic wafer comprises a plurality of MEMS acoustic chips which are arranged in an array mode, each MEMS acoustic chip comprises a first substrate, and a first electrode and a second electrode are arranged on one side, close to the communicating component, of each first substrate;
forming a connected wafer; the communication wafer comprises a plurality of communication assemblies arranged in an array, each communication assembly comprises a second substrate, a first through hole and a second through hole which are arranged in the second substrate, and a first wiring and a second wiring which are positioned on one side of the second substrate far away from the first substrate, a first conductive structure is arranged in each first through hole, a second conductive structure is arranged in each second through hole, each first conductive structure is electrically connected with each first wiring, and each second conductive structure is electrically connected with each second wiring;
bonding the MEMS acoustic wafer and the communication wafer such that the first conductive structure is electrically connected to the first electrode and the second conductive structure is electrically connected to the second electrode;
forming an application specific integrated circuit wafer; the special application integrated circuit wafer comprises a plurality of special application integrated circuit chips arranged in an array mode, and each special application integrated circuit chip comprises a third substrate, a third electrode and a fourth electrode, wherein the third electrode and the fourth electrode are positioned on the surface of one side, close to the communicating component, of the third substrate;
cutting the special application integrated circuit wafer to obtain a plurality of special application integrated circuit chips;
correspondingly mounting the special application integrated circuit chips to one side of the communicated wafer, which is far away from the micro-electromechanical system acoustic wafer, so that the third electrode is electrically connected with the first wiring, and the fourth electrode is electrically connected with the second wiring;
and cutting the MEMS acoustic wafer and the communication wafer.
10. The method of claim 9, wherein said asic chip further comprises at least one fifth electrode on a side surface of said third substrate adjacent to said interconnect assembly; the ASIC chip further comprises at least one third through via in the third substrate and a third wire on the inner wall of the third through via and the surface of the third substrate on the side away from the interconnect assembly, wherein the third through via corresponds to the fifth electrode one by one, and the third wire is electrically connected to the fifth electrode;
after cutting the MEMS acoustic wafer and the communication wafer, the method further comprises the following steps:
forming a housing; the housing surrounding the ASIC chip, the communication assembly, and the MEMS acoustic chip; the shell comprises a first shell subsection and a second shell subsection, the first shell subsection is close to one side of the MEMS acoustic chip, the second shell subsection is close to one side of the ASIC chip, and a sound inlet hole is formed in the first shell subsection; the second housing subsection is provided with a plurality of fifth electrode leading-out parts, each fifth electrode leading-out part comprises a first leading-out subsection close to one side of the ASIC chip, a second leading-out subsection penetrating through the second housing subsection and a third leading-out subsection far away from one side of the ASIC chip, the second leading-out subsections are respectively and electrically connected with the first leading-out subsection and the third leading-out subsection, the first leading-out subsection is electrically connected with the third wiring, and the third leading-out subsection is electrically connected with an external circuit.
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