CN111785848A - Perovskite light emitting diode and preparation method thereof - Google Patents
Perovskite light emitting diode and preparation method thereof Download PDFInfo
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- CN111785848A CN111785848A CN202010676379.3A CN202010676379A CN111785848A CN 111785848 A CN111785848 A CN 111785848A CN 202010676379 A CN202010676379 A CN 202010676379A CN 111785848 A CN111785848 A CN 111785848A
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- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
- H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
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- H—ELECTRICITY
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Abstract
The invention provides a perovskite light-emitting diode and a preparation method thereof, wherein the perovskite light-emitting diode comprises a metal electrode layer, an electron transmission layer, a perovskite blue light material layer, a hole transmission layer and a transparent conducting layer which are sequentially stacked; the transparent conducting layer comprises a conducting film and double layers of transparent glass, and a perovskite red light material layer and a perovskite green light material layer are arranged between the double layers of transparent glass; and a light-transmitting isolating material layer is also arranged between the perovskite red light material layer and the perovskite green light material layer. The perovskite light-emitting diode provided by the invention has the characteristics of narrow light-emitting wave band, high light-emitting intensity and combined light-emitting of electroluminescence and photoluminescence, and has very low energy consumption of devices, thereby having important significance for promoting the commercialization process of the PeLED.
Description
Technical Field
The invention relates to the field of perovskite light emitting diodes, in particular to a perovskite light emitting diode and a preparation method thereof.
Background
At present, perovskite light emitting diode (English abbreviation: 'PeLED') is a novel light emitting diode with great potential. The perovskite material has the advantages of simple synthesis, narrow range of luminescence peak, adjustable forbidden bandwidth, high photoluminescence quantum yield, high color purity and the like, so that the perovskite material has great application potential on luminescent devices. Therefore, the development of a light emitting diode based on perovskite materials has great application potential.
Disclosure of Invention
The invention provides a perovskite light-emitting diode and a preparation method thereof, aiming at solving the technical problem that the existing light-emitting diode is inconvenient to use.
The invention provides a perovskite light-emitting diode which comprises a metal electrode layer, an electron transport layer, a perovskite blue light material layer, a hole transport layer and a transparent conducting layer which are sequentially stacked; the transparent conducting layer comprises a conducting film and double layers of transparent glass, and a perovskite red light material layer and a perovskite green light material layer are arranged between the double layers of transparent glass; and a light-transmitting isolating material layer is also arranged between the perovskite red light material layer and the perovskite green light material layer.
Further, the conducting film is an ITO conducting film, an FTO conducting film or a nano silver wire transparent conducting film.
Further, the hole transport layer adopts an organic hole transport layer, PEDOT, PSS or NiOx material.
Further, the perovskite blue light material layer, the perovskite red light material layer and the perovskite green light material layer adopt
A molecular structure material;
wherein: a is metal cation or organic cation, B is metal element, and O is halogen element.
Further, A is one or more of MA, FA and Cs; b is one or more of Pb, Bi and Sn; and the O is one or more of Cl, Br and I.
Furthermore, the perovskite blue light material layer, the perovskite red light material layer and the perovskite green light material layer are made of one or more of MACl, MABr, MAI, FACl, FABr, FAI, CsCl, CsBr and CsI and
、
、
、
、
、
one or a mixture of several of them.
On the other hand, the invention also provides a preparation method of the perovskite light-emitting diode, which comprises the following steps:
s1, sequentially carrying out deionized water, acetone, a detergent, deionized water and ethanol on the conductive glass sheet, and simultaneously carrying out ultrasonic cleaning;
s2, preparing materials for the perovskite blue light material layer, the perovskite red light material layer and the perovskite green light material layer;
s3, drying the cleaned conductive glass sheet, and rotationally coating a PEDOT film;
s4, rotationally coating the prepared materials for the perovskite blue light material layer, the perovskite red light material layer and the perovskite green light material layer on the PEDOT film;
s5, passing through a mask plate, at a temperature of less than 3 ×
Evaporating an electron transport layer under the vacuum condition of Pa;
and S6, evaporating the metal electrode layer.
Further, the steps S1-S6 are all prepared in a nitrogen box.
Further, the thickness of the PEDOT film is 10 nm; the thickness of the electron transmission layer is 40 nm; the thickness of the metal electrode layer is 90 nm.
Further, the spin coating conditions in step S3 and step S4 were each thirty seconds, 3000 revolutions per second, followed by 100 degree annealing for 10 minutes.
The invention has the beneficial effects that: the perovskite light-emitting diode provided by the invention has the characteristics of narrow light-emitting wave band, high light-emitting intensity and combined light-emitting of electroluminescence and photoluminescence, and has very low energy consumption of devices, thereby having important significance for promoting the commercialization process of the PeLED.
Drawings
Fig. 1 is a schematic structural view of a perovskite light emitting diode of the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
As shown in fig. 1, the present invention provides a perovskite light emitting diode, which includes a metal electrode layer, an electron transport layer, a perovskite blue light material layer, a hole transport layer and a transparent conductive layer, which are sequentially stacked; the transparent conducting layer comprises a conducting film and double layers of transparent glass, and a perovskite red light material layer and a perovskite green light material layer are arranged between the double layers of transparent glass; and a light-transmitting isolating material layer is also arranged between the perovskite red light material layer and the perovskite green light material layer.
The perovskite light-emitting diode provided by the invention has the characteristics of narrow light-emitting wave band, high light-emitting intensity and combined light-emitting of electroluminescence and photoluminescence, and has very low energy consumption of devices, thereby having important significance for promoting the commercialization process of the PeLED.
In an alternative embodiment, the conductive film is an ITO conductive film, an FTO conductive film or a nano silver wire transparent conductive film.
In an alternative embodiment, the hole transport layer is made of organic hole transport layer, PEDOT PSS or NiOx material.
In an alternative embodiment, the perovskite blue light material layer, the perovskite red light material layer and the perovskite green light material layer are adopted
A molecular structure material;
wherein: a is metal cation or organic cation, B is metal element, and O is halogen element.
In an alternative embodiment, a is one or more of MA, FA, and Cs; b is one or more of Pb, Bi and Sn; and the O is one or more of Cl, Br and I.
In an alternative embodiment, the perovskite blue light material layer, the perovskite red light material layer and the perovskite green light material layer are made of one or more of MACl, MABr, MAI, FACl, FABr, FAI, CsCl, CsBr and CsI and
、
、
、
、
、
one or a mixture of several of them.
On the other hand, the invention also provides a preparation method of the perovskite light-emitting diode, which comprises the following steps:
s1, sequentially carrying out deionized water, acetone, a detergent, deionized water and ethanol on the conductive glass sheet, and simultaneously carrying out ultrasonic cleaning;
s2, preparing materials for the perovskite blue light material layer, the perovskite red light material layer and the perovskite green light material layer;
s3, drying the cleaned conductive glass sheet, and rotationally coating a PEDOT film;
s4, rotationally coating the prepared materials for the perovskite blue light material layer, the perovskite red light material layer and the perovskite green light material layer on the PEDOT film;
s5, passing through a mask plate, at a temperature of less than 3 ×
Evaporating an electron transport layer under the vacuum condition of Pa;
and S6, evaporating the metal electrode layer.
The perovskite light-emitting diode provided by the invention has the characteristics of narrow light-emitting wave band, high light-emitting intensity and combined light-emitting of electroluminescence and photoluminescence, and has very low energy consumption of devices, thereby having important significance for promoting the commercialization process of the PeLED.
In an alternative embodiment, the steps S1-S6 are all prepared in a nitrogen box.
In an alternative embodiment, the PEDOT film has a thickness of 10 nm; the thickness of the electron transmission layer is 40 nm; the thickness of the metal electrode layer is 90 nm.
In an alternative embodiment, the spin coating conditions in step S3 and step S4 are thirty seconds each, 3000 revolutions per second, followed by 100 degree annealing for 10 minutes.
The detailed description is as follows
The present embodiment provides a Perovskite light emitting diode, which specifically includes a structure of Perovskite (PVSK, Perovskite layer, red light, CsPbI 3)/a structure of light transmissive insulating material (PMMA)/Perovskite (PVSK, Perovskite layer, green light, CsPbBr 3)/ITO/hole transport (PEDOT: PSS)/Perovskite (PVSK, Perovskite layer, blue violet light, CsPbI2 Cl)/electron transport layer (TPBI)/metal electrode (Ag). The preparation method comprises the following steps:
(1) pretreatment of transparent conductive layer
Indium Tin Oxide (ITO) conductive glass sheets with the resistance of 15 omega square-1 are sequentially cleaned by deionized water, acetone, detergent, deionized water and ethanol through ultrasonic cleaning for 20min each step.
(2) Preparation of perovskite precursor liquid
Preparing a red light solution of 0.5 mol/L lead iodide and 0.5 mol/L CsI, wherein the used solvent is DMSO.
Preparing a green light solution of 0.5 mol/L lead bromide and 0.5 mol/L CsBr, wherein the used solvent is DMSO.
And preparing a blue-violet light solution of 0.5 mol/L lead bromide and 0.5 mol/L LCsCl, wherein the solvent is DMOS.
(3) The electron transport layer TPBI is prepared by thermal evaporation and has a thickness of 40 nm.
(4) Preparation of solution for light-transmitting isolating layer
PMMA 2 mg per ml and the solvent was acetone.
(5) Preparation of perovskite devices
After drying the ITO glass in an oven, it was treated with PLASMA (oxygen PLASMA) for 4 minutes. And spin-coating a PEDOT film on the processed ITO glass sheet to a thickness of about 10nm, and annealing at 120 ℃ for 20 min. The perovskite precursor solution was spin coated on the PEDOT layer in a nitrogen atmosphere glove box. The spin coating conditions were 3000 rpm for thirty seconds and 100 ℃ for 10 minutes. Finally, a mask is placed in the vacuum chamber, 40nm metal TPBI is evaporated in vacuum less than 3 multiplied by 10 < -4 > Pa, and then 90nm metal Ag is evaporated. The active area of the device is 0.16 cm 2. Except that the preparation process of the PEDOT film is completed in an atmospheric environment, all the other steps are completed in a glove box in a nitrogen atmosphere.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples" or the like, mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing is a more detailed description of the present invention that is presented in conjunction with specific embodiments, and the practice of the invention is not to be considered limited to those descriptions. It will be apparent to those skilled in the art that a number of simple derivations or substitutions can be made without departing from the inventive concept.
Claims (10)
1. The perovskite light-emitting diode is characterized by comprising a metal electrode layer, an electron transport layer, a perovskite blue light material layer, a hole transport layer and a transparent conducting layer which are sequentially stacked; the transparent conducting layer comprises a conducting film and double layers of transparent glass, and a perovskite red light material layer and a perovskite green light material layer are arranged between the double layers of transparent glass; and a light-transmitting isolating material layer is also arranged between the perovskite red light material layer and the perovskite green light material layer.
2. The perovskite light-emitting diode of claim 1, wherein the conductive film is an ITO conductive film, an FTO conductive film or a nano-silver wire transparent conductive film.
3. The perovskite light emitting diode of claim 1, wherein the hole transport layer is an organic hole transport layer, PEDOT PSS, or NiOx material.
4. The perovskite light emitting diode of claim 1, wherein the perovskite blue light material layer, the perovskite red light material layer and the perovskite green light material layer employ
A molecular structure material;
wherein: a is metal cation or organic cation, B is metal element, and O is halogen element.
5. The perovskite light emitting diode of claim 4, wherein A is one or more of MA, FA, and Cs; b is one or more of Pb, Bi and Sn; and the O is one or more of Cl, Br and I.
6. The perovskite light-emitting diode of claim 1, wherein the perovskite blue light material layer, the perovskite red light material layer and the perovskite green light material layer are made of materials selected from one or more of MACl, MABr, MAI, FACl, FABr, FAI, CsCl, CsBr and CsI, and
、
、
、
、
、
one or a mixture of several of them.
7. A method of manufacturing a perovskite light emitting diode as claimed in any one of claims 1 to 6 comprising the steps of:
s1, sequentially carrying out deionized water, acetone, a detergent, deionized water and ethanol on the conductive glass sheet, and simultaneously carrying out ultrasonic cleaning;
s2, preparing materials for the perovskite blue light material layer, the perovskite red light material layer and the perovskite green light material layer;
s3, drying the cleaned conductive glass sheet, and rotationally coating a PEDOT film;
s4, rotationally coating the prepared materials for the perovskite blue light material layer, the perovskite red light material layer and the perovskite green light material layer on the PEDOT film;
s5, passing through a mask plate, at a temperature of less than 3 ×
Evaporating an electron transport layer under the vacuum condition of Pa;
and S6, evaporating the metal electrode layer.
8. The method of manufacturing a perovskite light emitting diode as claimed in claim 7, wherein the steps S1 to S6 are all manufactured in a nitrogen gas tank.
9. The method of making a perovskite light emitting diode as claimed in claim 7 wherein the PEDOT thin film is 10nm thick; the thickness of the electron transmission layer is 40 nm; the thickness of the metal electrode layer is 90 nm.
10. The method of making a perovskite light emitting diode as claimed in claim 7 wherein the spin coating conditions in steps S3 and S4 are thirty seconds at 3000 revolutions per second followed by 100 degree annealing for 10 minutes.
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Citations (5)
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|---|---|---|---|---|
| CN108511616A (en) * | 2018-04-17 | 2018-09-07 | 南京邮电大学 | A kind of preparation method of perovskite film layer and perovskite LED device |
| CN110854167A (en) * | 2019-10-28 | 2020-02-28 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
| CN110875348A (en) * | 2018-08-29 | 2020-03-10 | 三星显示有限公司 | Display device |
| CN111048672A (en) * | 2019-11-01 | 2020-04-21 | 华南理工大学 | Perovskite electroluminescence-based white light LED and preparation method thereof |
| WO2020130592A1 (en) * | 2018-12-17 | 2020-06-25 | 서울대학교산학협력단 | Metal halide perovskite light emitting device and method for manufacturing same |
-
2020
- 2020-07-14 CN CN202010676379.3A patent/CN111785848A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108511616A (en) * | 2018-04-17 | 2018-09-07 | 南京邮电大学 | A kind of preparation method of perovskite film layer and perovskite LED device |
| CN110875348A (en) * | 2018-08-29 | 2020-03-10 | 三星显示有限公司 | Display device |
| WO2020130592A1 (en) * | 2018-12-17 | 2020-06-25 | 서울대학교산학협력단 | Metal halide perovskite light emitting device and method for manufacturing same |
| CN110854167A (en) * | 2019-10-28 | 2020-02-28 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
| CN111048672A (en) * | 2019-11-01 | 2020-04-21 | 华南理工大学 | Perovskite electroluminescence-based white light LED and preparation method thereof |
Non-Patent Citations (1)
| Title |
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| M. BIDIKOUDI, E. FRESTA, R. D. COSTA: "White perovskite based lighting devices", 《CHEMICAL COMMUNICATIONS》 * |
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