CN111785614B - Bonding structure capable of reducing voltage loss and preparation method thereof - Google Patents
Bonding structure capable of reducing voltage loss and preparation method thereof Download PDFInfo
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- CN111785614B CN111785614B CN202010561686.7A CN202010561686A CN111785614B CN 111785614 B CN111785614 B CN 111785614B CN 202010561686 A CN202010561686 A CN 202010561686A CN 111785614 B CN111785614 B CN 111785614B
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
Abstract
The invention discloses a bonding structure for reducing voltage loss and a preparation method thereof, and relates to a method for depositing a protective layer capable of inhibiting diffusion of internal and external atoms and protecting a crystal structure on the surface of a material on the surfaces of two bonding materials forming a semiconductor bonding structure in vacuum, preventing impurity atoms in an environment atmosphere from being adsorbed on the bonding surface, protecting the crystal structure on the surface of the bonding material, inhibiting diffusion of doping atoms of the bonding material to the surface, reducing complexity and difficulty of a surface cleaning and activating process, reducing potential barrier of a carrier across a bonding interface, and improving the performance of a final device.
Description
Technical Field
The invention relates to a bonding structure for reducing voltage loss and a preparation method thereof, belonging to the technical field of improving the performance of a bonding structure device.
Background
The semiconductor bonding technology can directly contact two materials with different lattice constants and effectively combine the materials together under the conditions of applying certain pressure and temperature to form a semiconductor bonding structure, realizes effective integration of devices such as micro-electronics, photoelectrons and the like with different spectral ranges and different functions, and is widely applied to heterogeneous integrated devices and chips such as solid-state switching circuits, III-V compound solar cells, semiconductor lasers, semiconductor detectors and the like. Because the semiconductor bonding structure is used for connecting two materials with different lattice constants, the basic requirements of a semiconductor bonding process on the surface quality are met, namely the bonding interface of the two materials is flat and smooth at an atomic level, the surface cannot carry adsorbed impurities, and the basic requirements of low resistivity are met on the electrical performance, namely the bonding surface of the two materials is provided with active doping atoms with high enough concentration, which is usually realized by intentionally doping high-concentration atoms in the two bonding materials. The surfaces of two materials participating in semiconductor bonding in the prior art attract a large amount of environmental atmosphere impurity atoms to adsorb due to broken bond electrostatic action, and the adsorption action often has two negative effects: 1) the surface crystal structure is damaged by the surface aggregation behavior pollution of impurity atoms in the environment atmosphere, and the impurity atoms are difficult to remove in the subsequent surface cleaning and activating action; 2) the doping atoms in the two materials diffuse to the surface under the electrostatic attraction of the impurity atoms adsorbed on the surface to combine with the doping atoms to form an electric neutral group, or the surface impurity atoms diffuse to the interior of the bonding material under the electrostatic attraction of the doping atoms in the bonding material to combine to form an electric neutral group. The two negative effects end up in that the electrical potential barrier of a carrier crossing a bonding interface is increased, the resistivity of a semiconductor bonding structure is improved, and the performance of a final device is restricted.
Disclosure of Invention
The technical problem solved by the invention is as follows: the defects of the prior art are overcome, and the bonding structure and the preparation method thereof for reducing the voltage loss are provided, so that the adsorption of impurity atoms in the environment atmosphere on the bonding surface is prevented, the crystal structure on the surface of the bonding material is protected, the diffusion of the doping atoms of the bonding material to the surface is inhibited, the complexity and difficulty of the surface cleaning and activating process are reduced, the potential barrier of a carrier crossing the bonding interface is reduced, and the performance of the final device is improved.
The technical scheme of the invention is as follows: a preparation method of a bonding structure for reducing voltage loss is characterized by comprising the following steps:
(1) preparing two objects to be bonded, wherein the first object to be bonded adopts bonding materials, and the second object to be bonded adopts bonding materials;
(2) determining materials of a protective layer of a first object to be bonded and a protective layer of a second object to be bonded, wherein the materials can be deposited on the surfaces of the first object to be bonded and the second object to be bonded in vacuum without damaging the crystal structures of the surfaces of the first object to be bonded and the second object to be bonded, and can be removed before the two objects to be bonded are bonded;
(3) determining the lattice constant and the crystal structure type of a protective layer of a first object to be bonded to be the same as those of the first object to be bonded; determining the lattice constant and the crystal structure type of a protective layer of a second object to be bonded to enable the lattice constant and the crystal structure type of the protective layer of the second object to be bonded to be the same as those of the second object to be bonded;
(4) determining the charge types of the doping atoms of the protective layer of the first type of object to be bonded and the protective layer of the second type of object to be bonded, and satisfying the following conditions:
the protective layer of the first substance to be bonded can generate an electric field opposite to the charge type of the doping atoms of the first substance to be bonded at the bonding interface of the first substance to be bonded; the concentration of doping atoms of a protective layer of the first object to be bonded is not higher than the concentration for causing the doping atoms to diffuse to the first object to be bonded and is not lower than the lowest concentration for generating a reverse electric field; the reverse electric field is an electric field opposite to an electric field generated by the first object to be bonded;
the protective layer of the second substance to be bonded can generate an electric field with the charge type opposite to that of the doping atom of the second substance to be bonded at the bonding interface of the second substance to be bonded; the concentration of doping atoms of a protective layer of the second object to be bonded is not higher than the concentration which causes the doping atoms to diffuse to the second object to be bonded and is not lower than the lowest concentration which generates a reverse electric field; the reverse electric field is an electric field opposite to an electric field generated by a second object to be bonded;
(5) determining the deposition thickness of a protective layer of a first object to be bonded on the surface of the first object to be bonded; determining the deposition thickness of a protective layer of a second object to be bonded on the surface of the second object to be bonded, and satisfying the following conditions:
the material thickness of the protective layer of the first type of object to be bonded must be greater than the minimum thickness capable of inhibiting the diffusion of foreign impurity atoms in the surrounding environment into the first type of object to be bonded and less than the maximum thickness capable of being removed before bonding;
the material thickness of the protective layer of the second type of object to be bonded must be greater than the minimum thickness capable of inhibiting the diffusion of foreign impurity atoms in the surrounding environment into the second type of object to be bonded and less than the maximum thickness capable of being removed before bonding;
(6) determining the preparation time and the preparation parameters of the protective layer of the first to-be-bonded object and the protective layer of the second to-be-bonded object, and satisfying the following conditions:
the preparation time of the protective layer of the first object to be bonded is carried out immediately in vacuum when the growth of the bonding material adopted by the first object to be bonded is finished; the preparation parameters require that the prepared protective layer of the first object to be bonded does not damage the crystal structure and the distribution of doping atoms of the first object to be bonded;
the preparation time of the protective layer of the second object to be bonded is carried out immediately in vacuum when the growth of the bonding material adopted by the second object to be bonded is finished; the preparation parameter requirement is that the prepared protective layer of the second object to be bonded does not damage the crystal structure and the distribution of doping atoms of the second object to be bonded;
(7) determining a removing process of a protective layer of a first object to be bonded and a protective layer of a second object to be bonded, which can meet the requirement of completely removing the protective layers of the first object to be bonded and the second object to be bonded before bonding, and does not damage the crystal structures of the first object to be bonded and the second object to be bonded;
(8) determining materials of the protective layer of the first to-be-bonded object and the protective layer of the second to-be-bonded object according to the step (2), determining the lattice constant and the crystal structure type of the protective layer of the first to-be-bonded object and the protective layer of the second to-be-bonded object according to the step (3), determining the charge type of doping atoms of the protective layer of the first to-be-bonded object and the protective layer of the second to-be-bonded object according to the step (4), and determining the deposition thicknesses of the protective layer of the first to-be-bonded object and the protective layer of the second to-be-bonded object on the surface of the first to-be-bonded object and the surface of the second to-be-bonded object respectively according to the step (5); step (6) determining the preparation time and preparation parameters of the protective layer of the first to-be-bonded object and the protective layer of the second to-be-bonded object, and respectively preparing the protective layer of the first to-be-bonded object and the protective layer of the second to-be-bonded object on the first to-be-bonded object and the second to-be-bonded object prepared in step (1);
(9) according to the removing process of the protective layer of the first object to be bonded and the protective layer of the second object to be bonded, which is determined in the step (7), before the first object to be bonded and the second object to be bonded are bonded, completely removing the protective layer of the first object to be bonded and the protective layer of the second object to be bonded, which are prepared in the step (8);
(10) and bonding the first to-be-bonded object and the second to-be-bonded object after removing the protective layer of the first to-be-bonded object and the protective layer of the second to-be-bonded object to obtain a bonded structure, so that the resistivity of the bonded structure is reduced, and the voltage loss is reduced.
The first material to be bonded has a crystal structure, and the first material to be bonded can generate an electric field.
The second material to be bonded has a crystal structure, and the crystal structure of the second material to be bonded can generate an electric field.
The protective layer of the first type of object to be bonded is of a crystalline structure with dopant atoms therein.
The protective layer of the second substance to be bonded has a crystal structure with doping atoms.
A bonding structure with reduced voltage loss, comprising: a first substance to be bonded and a second substance to be bonded;
the first object to be bonded adopts bonding material, and the second object to be bonded adopts bonding material;
after a first object to be bonded and a second object to be bonded are prepared, respectively preparing a protective layer of the first object to be bonded and a protective layer of the second object to be bonded on the first object to be bonded and the second object to be bonded; before the first object to be bonded and the second object to be bonded are bonded, the protective layer of the first object to be bonded and the protective layer of the second object to be bonded can be completely removed;
bonding the first to-be-bonded object and the second to-be-bonded object after removing the protective layer of the first to-be-bonded object and the protective layer of the second to-be-bonded object to obtain a bonded structure;
the protective layer of the first kind of object to be bonded and the protective layer of the second kind of object to be bonded are required to be as follows:
the materials of the protective layer of the first object to be bonded and the protective layer of the second object to be bonded meet the requirement that the materials can be deposited on the surfaces of the first object to be bonded and the second object to be bonded in vacuum without damaging the crystal structures of the surfaces of the first object to be bonded and the second object to be bonded, and can be removed before the two objects to be bonded are bonded;
the lattice constant and the crystal structure type of the protective layer of the first object to be bonded are the same as those of the first object to be bonded; the lattice constant and the crystal structure type of the protective layer of the second object to be bonded are the same as those of the second object to be bonded;
the charge types of the doping atoms of the protective layer of the first to-be-bonded object and the protective layer of the second to-be-bonded object satisfy that:
the protective layer of the first substance to be bonded can generate an electric field opposite to the charge type of the doping atoms of the first substance to be bonded at the bonding interface of the first substance to be bonded; the concentration of doping atoms of a protective layer of the first object to be bonded is not higher than the concentration for causing the doping atoms to diffuse to the first object to be bonded and is not lower than the lowest concentration for generating a reverse electric field; the reverse electric field is an electric field opposite to an electric field generated by the first object to be bonded;
the protective layer of the second substance to be bonded can generate an electric field with the charge type opposite to that of the doping atom of the second substance to be bonded at the bonding interface of the second substance to be bonded; the concentration of doping atoms of a protective layer of the second object to be bonded is not higher than the concentration which causes the doping atoms to diffuse to the second object to be bonded and is not lower than the lowest concentration which generates a reverse electric field; the reverse electric field is an electric field opposite to an electric field generated by a second object to be bonded;
the deposition thickness of the protective layer of the first object to be bonded on the surface of the first object to be bonded and the deposition thickness of the protective layer of the second object to be bonded on the surface of the second object to be bonded satisfy that:
the material thickness of the protective layer of the first type of object to be bonded must be greater than the minimum thickness capable of inhibiting the diffusion of foreign impurity atoms in the surrounding environment into the first type of object to be bonded and less than the maximum thickness capable of being removed before bonding;
the material thickness of the protective layer of the second type of object to be bonded must be greater than the minimum thickness capable of inhibiting the diffusion of foreign impurity atoms in the surrounding environment into the second type of object to be bonded and less than the maximum thickness capable of being removed before bonding;
the preparation time and preparation parameters of the protective layer of the first object to be bonded and the protective layer of the second object to be bonded meet the following requirements:
the preparation time of the protective layer of the first object to be bonded is carried out immediately in vacuum when the growth of the bonding material adopted by the first object to be bonded is finished; the preparation parameters require that the prepared protective layer of the first object to be bonded does not damage the crystal structure and the distribution of doping atoms of the first object to be bonded;
the preparation time of the protective layer of the second object to be bonded is carried out immediately in vacuum when the growth of the bonding material adopted by the second object to be bonded is finished; the preparation parameter requirement is that the prepared protective layer of the second object to be bonded does not damage the crystal structure and the distribution of doping atoms of the second object to be bonded;
the removing process of the protective layer of the first object to be bonded and the protective layer of the second object to be bonded can meet the requirement of completely removing the protective layers of the first object to be bonded and the second object to be bonded before bonding, and does not damage the crystal structures of the first object to be bonded and the second object to be bonded.
The first material to be bonded has a crystal structure, and the first material to be bonded can generate an electric field.
The second material to be bonded has a crystal structure, and the crystal structure of the second material to be bonded can generate an electric field.
The protective layer of the first type of object to be bonded is of a crystalline structure with dopant atoms therein.
The protective layer of the second substance to be bonded has a crystal structure with doping atoms.
Compared with the prior art, the invention has the advantages that:
(1) the invention provides a bonding structure for reducing voltage loss and a preparation method thereof, which solve the problems of poor bonding interface quality and large voltage loss in the prior art,
(2) The special protective layer deposited on the surfaces of the two semiconductor bonding materials prevents impurity atoms in the environment atmosphere from being adsorbed on the bonding surface, protects the crystal structure on the surface of the bonding material,
(3) the invention simultaneously inhibits the diffusion of the doping atoms of the bonding material to the surface, reduces the complexity and difficulty of the surface cleaning and activating process, reduces the potential barrier of the carrier crossing the bonding interface, and improves the performance of the final device.
Drawings
FIG. 1 illustrates a prior art semiconductor bonding process without a surface protection layer.
FIG. 2 illustrates a semiconductor bonding process with a surface protection layer according to the present invention.
FIG. 3 is a schematic structural diagram of a preferred embodiment of a GaAs/InP bonded structure provided by the present invention.
Detailed Description
The invention is described in further detail below with reference to the figures and specific embodiments.
The invention discloses a bonding structure for reducing voltage loss and a preparation method thereof, and relates to a method for depositing a protective layer capable of inhibiting diffusion of internal and external atoms and protecting a crystal structure on the surface of a material on the surfaces of two bonding materials forming a semiconductor bonding structure in vacuum, preventing impurity atoms in an environment atmosphere from being adsorbed on the bonding surface, protecting the crystal structure on the surface of the bonding material, inhibiting diffusion of doping atoms of the bonding material to the surface, reducing complexity and difficulty of a surface cleaning and activating process, reducing potential barrier of a carrier across a bonding interface, and improving the performance of a final device.
The invention provides a preparation method of a bonding structure for reducing voltage loss, which is based on the consideration that devices and chips represented by III-V compound solar cells, semiconductor lasers, semiconductor detectors and the like often need to adopt a semiconductor bonding structure to realize heterogeneous integration of materials with different lattice constants, good device performance requires the semiconductor bonding structure to have very low voltage loss, the voltage loss of the bonding structure is required to be less than 1mV under the condition of passing short-circuit current by the three devices, however, the voltage loss is greatly increased by adsorption and inward diffusion of environmental atmosphere impurity atoms on the surface of a semiconductor to-be-bonded object, for example, the voltage loss of GaAs/InP in the III-V compound solar cells can reach 200 mV.
Fig. 1 is a flow chart of a conventional semiconductor bonding process, in which two materials 1 and 2 constituting a semiconductor bonding structure are directly subjected to a bonding process to form a semiconductor bonding structure 3. Fig. 2 is an invention flow diagram. Comparing fig. 1 and fig. 2, the present invention provides a method for reducing voltage loss of a semiconductor bonding structure, which requires depositing protective layers 3 and 4 capable of inhibiting diffusion of internal and external atoms and protecting a crystal structure on a material surface on the surfaces of two bonding objects 1 and 2 constituting the semiconductor bonding structure in vacuum after the preparation of the bonding objects 1 and 2 is finished, and rapidly removing the protective layers 3 and 4 before a bonding process to form the semiconductor bonding structure. The method comprises the material composition of protective layers 4 and 3, doping atoms, material thickness, a preparation method and a removing process before a bonding process. In fig. 2, the protective layer 3 is a protective layer of the bond 1, and the protective layer 4 is a protective layer of the bond 2.
The invention relates to a bonding structure for reducing voltage loss, which comprises: a first substance to be bonded and a second substance to be bonded;
the first object to be bonded adopts bonding material 1, and the second object to be bonded adopts bonding material 2;
immediately after the first object to be bonded and the second object to be bonded are prepared, respectively preparing a protective layer 3 of the first object to be bonded and a protective layer 4 of the second object to be bonded on the first object to be bonded and the second object to be bonded; before the first object to be bonded and the second object to be bonded are bonded, the protective layer 3 of the first object to be bonded and the protective layer 4 of the second object to be bonded can be completely removed;
bonding the first to-be-bonded object and the second to-be-bonded object after the protective layer 3 of the first to-be-bonded object and the protective layer 4 of the second to-be-bonded object are removed to obtain a bonded structure;
the protective layer 3 of the first type of object to be bonded and the protective layer 4 of the second type of object to be bonded are required to be as follows:
the materials of the protective layer 3 of the first object to be bonded and the protective layer 4 of the second object to be bonded meet the requirement that the materials can be deposited on the surfaces of the first object to be bonded 1 and the second object to be bonded 2 in vacuum without damaging the crystal structures of the surfaces of the first object to be bonded and the second object to be bonded, and can be removed before the two objects to be bonded are bonded;
the lattice constant and the crystal structure type of the protective layer 3 of the first object to be bonded are satisfied so as to be the same as those of the first object to be bonded 1; the lattice constant and the crystal structure type of the protective layer 4 of the second object to be bonded are the same as those of the second object to be bonded 2;
the charge type of the doping atoms of the protective layer 3 of the first type of object to be bonded and the protective layer 4 of the second type of object to be bonded satisfies:
the protective layer 3 of the first substance to be bonded is capable of generating an electric field opposite to the charge type of the doping atoms of the first substance to be bonded at the bonding interface of the first substance to be bonded; the concentration of doping atoms of the protective layer 3 of the first substance to be bonded is not higher than the concentration which causes the doping atoms to diffuse to the first substance to be bonded and is not lower than the lowest concentration which generates a reverse electric field; the electric field reversal refers to an electric field opposite to an electric field generated by the first object to be bonded;
the protective layer 4 of the second substance to be bonded can generate an electric field opposite to the charge type of the doping atoms of the second substance to be bonded at the bonding interface of the second substance to be bonded; the concentration of doping atoms of the protective layer 3 of the second substance to be bonded is not higher than the concentration which causes the doping atoms to diffuse to the second substance to be bonded and is not lower than the lowest concentration which generates a reverse electric field; the electric field reversal refers to an electric field opposite to an electric field generated by a second object to be bonded;
the deposition thickness of the protective layer 3 of the first substance to be bonded on the surface of the first substance to be bonded and the deposition thickness of the protective layer 4 of the second substance to be bonded on the surface of the second substance to be bonded satisfy that:
the material thickness of the protective layer 3 of the first type of object to be bonded must be greater than the minimum thickness capable of inhibiting the diffusion of foreign impurity atoms in the surrounding environment into the first type of object to be bonded and less than the maximum thickness capable of being removed before bonding;
the material thickness of the protective layer 4 of the second type of object to be bonded must be greater than the minimum thickness capable of inhibiting the diffusion of foreign impurity atoms in the surrounding environment into the second type of object to be bonded and less than the maximum thickness capable of being removed before bonding;
the preparation time and preparation parameters of the protective layer 3 of the first object to be bonded and the protective layer 4 of the second object to be bonded meet the following requirements:
the preparation time of the protective layer 3 of the first object to be bonded is carried out immediately in vacuum when the growth of the bonding material 1 adopted by the first object to be bonded is finished; the preparation parameters require that the prepared protective layer 3 of the first object to be bonded does not damage the crystal structure and the distribution of doping atoms of the first object to be bonded;
the preparation time of the protective layer 4 of the second object to be bonded is carried out immediately in vacuum when the growth of the bonding material 2 adopted by the second object to be bonded is finished; the preparation parameters require that the prepared protective layer 4 of the first object to be bonded does not damage the crystal structure and the distribution of doping atoms of the second object to be bonded;
the removing process of the protective layer 3 of the first object to be bonded and the protective layer 4 of the second object to be bonded can meet the requirement of completely removing the protective layer 3 of the first object to be bonded and the protective layer 4 of the second object to be bonded before bonding, and does not damage the crystal structures of the first object to be bonded and the second object to be bonded.
The invention relates to a preparation method of a bonding structure for reducing voltage loss, which comprises the following steps:
1) preparing two objects to be bonded, wherein the first object to be bonded is a bonding object 1, and the second object to be bonded is a bonding object 2, and the preferable scheme is as follows
The first type of material to be bonded is a crystal structure having dopant atoms therein. The first type of bond 1 is capable of generating an electric field directed at the bonding interface to drive carriers across the bonding interface, such as the preferred bonds Si, GaAs, InP, InGaAs, InSb, etc., doped with atoms B, C, Be, Si, Zn, Mg, etc
The second material to be bonded is of a crystal structure, and the crystal structure of the second material to be bonded 2 can generate an electric field opposite to the bonding interface to drive carriers to be separated from the bonding interface, such As the preferred bonding materials of Si, GaAs, InP, InGaAs, InSb, etc., and doping atoms of P, Si, As, S, Te, Se, etc.
2) Determining materials of a protective layer 3 of a first object to be bonded and a protective layer 4 of a second object to be bonded, wherein the materials can be deposited on the surfaces of a first object to be bonded 1 and a second object to be bonded 2 in vacuum without damaging the crystal structures of the surfaces of the first object to be bonded and the second object to be bonded, and can be removed before the two objects to be bonded are bonded; the preferred embodiment is as follows
The conditions necessary for the removal process before the bonding process of the protective layers 3 and 4, preferably in a selective wet etching mode, preferably as NH4OH:H2O2:H2O、H3PO4:H2O2:H2O, and the like.
The protective layer 3 of the first type of material to be bonded is of a crystalline structure with dopant atoms capable of generating an electric field directed towards the material to be bonded 1
The protective layer 4 of the second type of material to be bonded is of a crystalline structure with dopant atoms capable of generating an electric field directed towards the material to be bonded 2
Preferred requirements for deposition are: can not obviously influence the material of the to-be-bonded object, destroy the crystal structure and the distribution of the doping atoms
Preferred requirements for removal are: can quickly and cleanly remove the protective layer and can not damage the crystal structure of the object to be bonded
The preferable scheme of the materials of the protective layer 3 of the first object to be bonded and the protective layer 4 of the second object to be bonded is as follows: including single crystal III-V compounds, single crystal IV compounds, single crystal II-VI compounds, and the like. Such as AlInP, AlGaAs, GaInP, Si, CdTe, etc
3) Determining the lattice constant and the crystal structure type of the protective layer 3 of the first object to be bonded to be the same as those of the first object 1 to be bonded; determining the lattice constant and the crystal structure type of the protective layer 4 of the second object to be bonded to be the same as those of the second object to be bonded 2; the preferred embodiment is as follows
The lattice-matched AlGaInP is preferably chosen if the protective layers 3 and 4, as in fig. 2, are monocrystalline III-V compounds, monocrystalline IV compounds, monocrystalline II-VI compounds, which must have the same lattice constant and crystal structure type as the material 1 or 2 to be bonded, for example GaAs for the material 1 or 2 to be bonded.
4) Determining the charge type of the doping atoms of the protective layer 3 of the first type of object to be bonded and the protective layer 4 of the second type of object to be bonded, wherein the charge types of the doping atoms satisfy the following conditions:
the protective layer 3 of the first substance to be bonded is capable of generating an electric field opposite to the charge type of the doping atoms of the first substance to be bonded at the bonding interface of the first substance to be bonded; the concentration of doping atoms of the protective layer 3 of the first substance to be bonded is not higher than the concentration which causes the doping atoms to diffuse to the first substance to be bonded and is not lower than the lowest concentration which generates a reverse electric field; the electric field reversal refers to an electric field opposite to an electric field generated by the first object to be bonded;
the protective layer 4 of the second substance to be bonded can generate an electric field opposite to the charge type of the doping atoms of the second substance to be bonded at the bonding interface of the second substance to be bonded; the concentration of doping atoms of the protective layer 3 of the second substance to be bonded is not higher than the concentration which causes the doping atoms to diffuse to the second substance to be bonded and is not lower than the lowest concentration which generates a reverse electric field; the electric field reversal refers to an electric field opposite to an electric field generated by a second object to be bonded; the preferred scheme is as follows:
preferably, the lowest concentration capable of generating an effective electric field is NEThe concentration of dopant atoms to be bonded being NbThe concentration of the protective layer satisfies NE<N<0.1NbE.g. preferably 10 in group III-V single crystals16cm-3-1018cm-3. The preferred embodiment of the opposite doping atom type is that the bond 1 or 2 to be bonded is p-type Mg, Zn, C doping, and the charge type of the protective layer 3 or 4 can only be n-type O, Si, S, Se, Te, etc. The electric field generated by O, Si, S, Se, Te and the like can effectively inhibit the diffusion of environmental impurity atoms H, and prevent the diffusion of bonding objects 1, 2Mg and Zn to a bonding interface in the form of a reverse electric field, thereby greatly improving the conductivity of the bonding objects 1 and 2.
5) Determining the deposition thickness of a protective layer 3 of a first object to be bonded on the surface of the first object to be bonded; determining the deposition thickness of the protective layer 4 of the second object to be bonded on the surface of the second object to be bonded, and satisfying the following conditions:
the material thickness of the protective layer 3 of the first type of object to be bonded must be greater than the minimum thickness capable of inhibiting the diffusion of foreign impurity atoms in the surrounding environment into the first type of object to be bonded and less than the maximum thickness capable of being removed before bonding.
The material thickness of the protective layer 4 of the second type of object to be bonded must be greater than the minimum thickness capable of inhibiting the diffusion of foreign atoms in the surrounding environment into the second type of object to be bonded and less than the maximum thickness capable of being removed before bonding. The preferred embodiment is as follows
The material thickness h of the protective layer 3 of the first type of object to be bonded must be greater than the minimum thickness capable of inhibiting the diffusion of the ambient impurity atoms in the surrounding environment into the first type of object to be bonded, and less than the maximum thickness capable of being removed before bonding, and the specific preferred scheme is as follows: when the diffusion depth of the environmental impurity atoms in the protective layer material is LdThe maximum thickness that can be quickly removed by the wet etching process is hetchThe protective layer preferably has a thickness Ld<h<hetchFor a single crystal group III-V compound protective layer, the preferred thickness is 20-100 nm.
6) Determining the preparation time and the preparation parameters of the protective layer 3 of the first object to be bonded and the protective layer 4 of the second object to be bonded, and satisfying the following conditions:
the preparation time of the protective layer 3 of the first object to be bonded is carried out immediately in vacuum when the growth of the bonding object 1 adopted by the first object to be bonded is finished; the preparation parameters require that the prepared protective layer 3 of the first object to be bonded does not damage the crystal structure and the distribution of doping atoms of the first object to be bonded;
the preparation time of the protective layer 4 of the second object to be bonded is carried out immediately in vacuum when the growth of the bonding material 2 adopted by the second object to be bonded is finished; the preparation parameters require that the prepared protective layer 4 of the first object to be bonded does not damage the crystal structure and the distribution of doping atoms of the second object to be bonded; the preferred scheme is as follows:
the preparation parameters preferably include: preparation time interval, growth temperature, growth time and the like
The preferred scheme is as follows: the preparation period of the protective layers 3 and 4 as in fig. 2 must be carried out immediately at the end of the growth of the bonds 1 and 2, and typical parameters such as temperature should preferably be lower than the bond preparation temperature, such as the preferred single crystal III-V compound protective layer, with an optimum temperature of 400 ℃ and 700 ℃.
7) Determining a removing process of the protective layer 3 of the first object to be bonded and the protective layer 4 of the second object to be bonded, which can meet the requirement of completely removing the protective layer 3 of the first object to be bonded and the protective layer 4 of the second object to be bonded before bonding, and does not damage the crystal structures of the first object to be bonded and the second object to be bonded; the preferred scheme is as follows:
the method meets the requirement of completely removing the protective layer 3 of the first to-be-bonded object and the protective layer 4 of the second to-be-bonded object before bonding, and specifically comprises the following steps: the protective layers 3 and 4 do not have any physical dose (< 0.2 nm) remaining on the surfaces of the objects to be bonded 1 and 2 after the removal process is completed.
The crystal structures of the first object to be bonded 1 and the second object to be bonded 2 are not damaged, and the preferable scheme is as follows: the removal process has a very high selectivity between the bonds 1 and 2 and the protective layers 3 and 4, for example GaAs for the bonds and GaInP for the protectors. HCl is preferred as the removal process.
8) The materials of the protective layer 3 of the first to-be-bonded object and the protective layer 4 of the second to-be-bonded object determined according to the step 2), the lattice constant and the crystal structure type of the protective layer 3 of the first to-be-bonded object and the protective layer 4 of the second to-be-bonded object determined according to the step 3), the charge type of doping atoms of the protective layer 3 of the first to-be-bonded object and the protective layer 4 of the second to-be-bonded object determined according to the step 4), and the deposition thicknesses of the protective layer 3 of the first to-be-bonded object and the protective layer 4 of the second to-be-bonded object on the surface of the first to-be-bonded object and the surface of the second to-be-bonded object respectively determined according to the step 5); step 6) determining the preparation time period, preparation time and preparation parameters of the protective layer 3 of the first object to be bonded and the protective layer 4 of the second object to be bonded, and respectively preparing the protective layer 3 of the first object to be bonded and the protective layer 4 of the second object to be bonded on the first object to be bonded and the second object to be bonded prepared in the step 1); the preferred scheme is as follows: it is preferable to use, for example, a protective layer of a single-crystal group III-V compound semiconductor, preferably a method of HVPE, MBE, MOVPE or the like in a high vacuum.
9) According to the removing process of the protective layer 3 of the first object to be bonded and the protective layer 4 of the second object to be bonded, which is determined in the step 7), before the first object to be bonded and the second object to be bonded are bonded, completely removing the protective layer 3 of the first object to be bonded and the protective layer 4 of the second object to be bonded, which are prepared in the step 8); the preferred scheme is as follows: preferably, for example, a monocrystalline group III-V compound semiconductor protective layer, preferably having a selective etching rate>107The wet etching solution can remove the protective layer cleanly and quickly, and can protect the surface of the bonding object from secondary pollution.
10) And bonding the first to-be-bonded object and the second to-be-bonded object after the protective layer 3 of the first to-be-bonded object and the protective layer 4 of the second to-be-bonded object are removed to obtain a bonded structure, so that the resistivity of the bonded structure is reduced, and the voltage loss is reduced.
The further scheme of the invention is as follows: preferably, the GaInP/GaAs double junction solar cell bonded to an InP substrate includes a GaInP/GaAs double junction solar cell 1, a highly p-type doped p + + bond layer 2, a protective layer 3 of the p + + bond layer 2, an n-type doped n + + bond layer 5, a protective layer 4 of the n + + bond layer 5, and an n-type substrate 6, which are sequentially disposed as shown in fig. 3.
The p + + bonding layer 2 is made of GaAs, the doping element is Zn, Mg or C, and the doping concentration is preferably 5x1019cm-3。
The protective layer 3 of the p + + bonding layer 2 is preferably made of Al0.5In0.5P with thickness of 20nm, doping element of Si or Se, and doping concentration of 1x1017cm-3。
The n + + bonding layer 5 is made of InP, the doping element is Si or Te, and the doping concentration is 5x1019cm-3。
The protective layer 4 of the n + + bond layer 5 is preferably InAlAs, preferably 20nm thick, preferably Zn as a doping element, preferably 1x10 as a doping concentration17cm-3。
The substrate 6 is preferably InP and preferably 50nm thick. The doping element is preferablySi with doping concentration of 1x1018cm-3。
The solar cell structure grows by adopting low-pressure Metal Organic Chemical Vapor Deposition (MOCVD) equipment. Preference is given to using HCl and H before the bonding process3PO4:H2O2:H2O removes protective layers 3 and 4 quickly and cleanly.
The experimental result shows that compared with a double-section solar cell prepared without a protective layer, the open-circuit voltage of the solar cell prepared by the method is improved by 200-300mV, and the stability of the bonding process is greatly improved.
In conclusion, the invention provides a method for reducing a semiconductor bonding structure and voltage loss thereof, which prevents adsorption of environmental atmosphere atoms on a bonding surface, protects a crystal structure on the surface of a bonding object, inhibits diffusion of doping atoms of the bonding object to the surface, reduces complexity and difficulty of surface cleaning and activating processes, reduces a potential barrier of a carrier across a bonding interface, and improves performance of a final device.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (10)
1. A preparation method of a bonding structure for reducing voltage loss is characterized by comprising the following steps:
(1) preparing two objects to be bonded, wherein the first object (1) to be bonded adopts bonding material, and the second object (2) to be bonded adopts bonding material;
(2) determining materials of a protective layer (3) of a first object to be bonded and a protective layer (4) of a second object to be bonded, wherein the materials can be deposited on the surfaces of the first object to be bonded (1) and the second object to be bonded (2) in vacuum without damaging the crystal structures of the surfaces of the first object to be bonded and the second object to be bonded, and can be removed before the two objects to be bonded are bonded;
(3) determining the lattice constant and the crystal structure type of the protective layer (3) of the first object to be bonded to be the same as the lattice constant and the crystal structure type of the first object to be bonded (1); determining the lattice constant and the crystal structure type of the protective layer (4) of the second object to be bonded to be the same as the lattice constant and the crystal structure type of the second object to be bonded (2);
(4) determining the charge type of the doping atoms of the protective layer (3) of the first type of object to be bonded and the protective layer (4) of the second type of object to be bonded, satisfying:
the protective layer (3) of the first substance to be bonded is satisfied with the condition that an electric field opposite to the charge type of doping atoms of the first substance to be bonded can be generated at the bonding interface of the first substance to be bonded; the concentration of doping atoms of the protective layer (3) of the first substance to be bonded is not higher than the concentration which causes the doping atoms to diffuse towards the first substance to be bonded and is not lower than the lowest concentration which generates a reverse electric field; the reverse electric field is an electric field opposite to an electric field generated by the first object to be bonded;
the protective layer (4) of the second substance to be bonded is satisfied to generate an electric field opposite to the charge type of the doping atoms of the second substance to be bonded at the bonding interface of the second substance to be bonded; the concentration of doping atoms of the protective layer (4) of the second substance to be bonded is not higher than the concentration which causes the doping atoms to diffuse towards the second substance to be bonded and is not lower than the lowest concentration which generates a reverse electric field; the reverse electric field is an electric field opposite to an electric field generated by a second object to be bonded;
(5) determining the deposition thickness of a protective layer (3) of a first object to be bonded on the surface of the first object to be bonded; determining the deposition thickness of a protective layer (4) of a second substance to be bonded on the surface of the second substance to be bonded, wherein the deposition thickness satisfies the following conditions:
the material thickness of the protective layer (3) of the first type of object to be bonded must be greater than the minimum thickness capable of inhibiting the diffusion of foreign impurity atoms in the surrounding environment into the first type of object to be bonded and less than the maximum thickness capable of being removed before bonding;
the material thickness of the protective layer (4) of the second type of object to be bonded must be greater than the minimum thickness capable of inhibiting the diffusion of foreign impurity atoms in the surrounding environment into the second type of object to be bonded and less than the maximum thickness capable of being removed before bonding;
(6) determining the preparation time and preparation parameters of a protective layer (3) of a first kind of object to be bonded and a protective layer (4) of a second kind of object to be bonded, and satisfying the following conditions:
the preparation time of the protective layer (3) of the first object to be bonded is carried out immediately in vacuum when the growth of the bonding material adopted by the first object to be bonded (1) is finished; the preparation parameters require that the prepared protective layer (3) of the first object to be bonded does not damage the crystal structure and the distribution of doping atoms of the first object to be bonded;
the preparation time of the protective layer (4) of the second object to be bonded is carried out immediately in vacuum when the growth of the bonding material adopted by the second object to be bonded (2) is finished; the preparation parameters require that the prepared protective layer (4) of the second object to be bonded does not damage the crystal structure and the distribution of doping atoms of the second object to be bonded;
(7) determining a removing process of a protective layer (3) of a first object to be bonded and a protective layer (4) of a second object to be bonded, which can meet the requirement of completely removing the protective layer (3) of the first object to be bonded and the protective layer (4) of the second object to be bonded before bonding, and does not damage the crystal structures of the first object to be bonded and the second object to be bonded;
(8) the materials of the protective layer (3) of the first substance to be bonded and the protective layer (4) of the second substance to be bonded are determined according to the step (2), the lattice constants and the crystal structure types of the protective layer (3) of the first substance to be bonded and the protective layer (4) of the second substance to be bonded are determined according to the step (3), the charge types of the doping atoms of the protective layer (3) of the first substance to be bonded and the protective layer (4) of the second substance to be bonded are determined according to the step (4), and the deposition thicknesses of the protective layer (3) of the first substance to be bonded and the protective layer (4) of the second substance to be bonded on the surface of the first substance to be bonded and the surface of the second substance to be bonded are determined according to the step (5); step (6) determining the preparation time and preparation parameters of the protective layer (3) of the first object to be bonded and the protective layer (4) of the second object to be bonded, and respectively preparing the protective layer (3) of the first object to be bonded and the protective layer (4) of the second object to be bonded on the first object to be bonded and the second object to be bonded prepared in step (1);
(9) according to the removing process of the protective layer (3) of the first object to be bonded and the protective layer (4) of the second object to be bonded, which is determined in the step (7), before the first object to be bonded and the second object to be bonded are bonded, completely removing the protective layer (3) of the first object to be bonded and the protective layer (4) of the second object to be bonded, which are prepared in the step (8);
(10) and bonding the first to-be-bonded object and the second to-be-bonded object after removing the protective layer (3) of the first to-be-bonded object and the protective layer (4) of the second to-be-bonded object to obtain a bonded structure, so that the resistivity of the bonded structure is reduced, and the voltage loss is reduced.
2. The method of claim 1, wherein the bonding structure comprises: the first material to be bonded has a crystal structure, and the first material (1) to be bonded is capable of generating an electric field.
3. The method of claim 1, wherein the bonding structure comprises: the second material to be bonded has a crystal structure, and the crystal structure of the second material (2) can generate an electric field.
4. The method of claim 1, wherein the bonding structure comprises: the protective layer (3) of the first type of object to be bonded is of a crystalline structure with doping atoms therein.
5. The method of claim 1, wherein the bonding structure comprises: the protective layer (4) of the second substance to be bonded has a crystal structure with doping atoms.
6. A bonding structure for reducing voltage loss, comprising: a first substance to be bonded and a second substance to be bonded;
the first object (1) to be bonded is made of bonding material, and the second object (2) to be bonded is made of bonding material;
immediately after the first object to be bonded and the second object to be bonded are prepared, respectively preparing a protective layer (3) of the first object to be bonded and a protective layer (4) of the second object to be bonded on the first object to be bonded and the second object to be bonded; before the first object to be bonded and the second object to be bonded are bonded, the protective layer (3) of the first object to be bonded and the protective layer (4) of the second object to be bonded can be completely removed;
bonding the first to-be-bonded object and the second to-be-bonded object after removing the protective layer (3) of the first to-be-bonded object and the protective layer (4) of the second to-be-bonded object to obtain a bonded structure;
the protective layer (3) of the first type of object to be bonded and the protective layer (4) of the second type of object to be bonded require the following:
the materials of the protective layer (3) of the first object to be bonded and the protective layer (4) of the second object to be bonded meet the requirement that the materials can be deposited on the surfaces of the first object to be bonded (1) and the second object to be bonded (2) in vacuum without damaging the crystal structures of the surfaces of the first object to be bonded and the second object to be bonded and can be removed before the two objects to be bonded are bonded;
the lattice constant and the crystal structure type of the protective layer (3) of the first substance to be bonded are satisfied so as to be the same as those of the first substance (1) to be bonded; the lattice constant and the crystal structure type of the protective layer (4) of the second object to be bonded are satisfied so as to be the same as those of the second object to be bonded (2);
the charge type of the doping atoms of the protective layer (3) of the first type of object to be bonded and the protective layer (4) of the second type of object to be bonded satisfies:
the protective layer (3) of the first substance to be bonded is satisfied with the condition that an electric field opposite to the charge type of doping atoms of the first substance to be bonded can be generated at the bonding interface of the first substance to be bonded; the concentration of doping atoms of the protective layer (3) of the first substance to be bonded is not higher than the concentration which causes the doping atoms to diffuse towards the first substance to be bonded and is not lower than the lowest concentration which generates a reverse electric field; the reverse electric field is an electric field opposite to an electric field generated by the first object to be bonded;
the protective layer (4) of the second substance to be bonded is satisfied to generate an electric field opposite to the charge type of the doping atoms of the second substance to be bonded at the bonding interface of the second substance to be bonded; the concentration of doping atoms of the protective layer (4) of the second substance to be bonded is not higher than the concentration which causes the doping atoms to diffuse towards the second substance to be bonded and is not lower than the lowest concentration which generates a reverse electric field; the reverse electric field is an electric field opposite to an electric field generated by a second object to be bonded;
the deposition thickness of the protective layer (3) of the first substance to be bonded on the surface of the first substance to be bonded and the deposition thickness of the protective layer (4) of the second substance to be bonded on the surface of the second substance to be bonded satisfy that:
the material thickness of the protective layer (3) of the first type of object to be bonded must be greater than the minimum thickness capable of inhibiting the diffusion of foreign impurity atoms in the surrounding environment into the first type of object to be bonded and less than the maximum thickness capable of being removed before bonding;
the material thickness of the protective layer (4) of the second type of object to be bonded must be greater than the minimum thickness capable of inhibiting the diffusion of foreign impurity atoms in the surrounding environment into the second type of object to be bonded and less than the maximum thickness capable of being removed before bonding;
the preparation time and preparation parameters of the protective layer (3) of the first object to be bonded and the protective layer (4) of the second object to be bonded meet the following requirements:
the preparation time of the protective layer (3) of the first object to be bonded is carried out immediately in vacuum when the growth of the bonding material adopted by the first object to be bonded (1) is finished; the preparation parameters require that the prepared protective layer (3) of the first object to be bonded does not damage the crystal structure and the distribution of doping atoms of the first object to be bonded;
the preparation time of the protective layer (4) of the second object to be bonded is carried out immediately in vacuum when the growth of the bonding material adopted by the second object to be bonded (2) is finished; the preparation parameters require that the prepared protective layer (4) of the second object to be bonded does not damage the crystal structure and the distribution of doping atoms of the second object to be bonded;
the removing process of the protective layer (3) of the first object to be bonded and the protective layer (4) of the second object to be bonded can meet the requirement of completely removing the protective layer (3) of the first object to be bonded and the protective layer (4) of the second object to be bonded before bonding, and does not damage the crystal structures of the first object to be bonded and the second object to be bonded.
7. The bonding structure for reducing voltage loss according to claim 6, wherein: the first material to be bonded has a crystal structure, and the first material (1) to be bonded is capable of generating an electric field.
8. The bonding structure for reducing voltage loss according to claim 6, wherein: the second material to be bonded has a crystal structure, and the crystal structure of the second material (2) can generate an electric field.
9. The bonding structure for reducing voltage loss according to claim 6, wherein: the protective layer (3) of the first type of object to be bonded is of a crystalline structure with doping atoms therein.
10. The bonding structure for reducing voltage loss according to claim 6, wherein: the protective layer (4) of the second substance to be bonded has a crystal structure with doping atoms.
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