CN111769049A - Sealing method of implantable device - Google Patents
Sealing method of implantable device Download PDFInfo
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- CN111769049A CN111769049A CN201910970197.4A CN201910970197A CN111769049A CN 111769049 A CN111769049 A CN 111769049A CN 201910970197 A CN201910970197 A CN 201910970197A CN 111769049 A CN111769049 A CN 111769049A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
Abstract
The present disclosure describes a method of sealing an implantable device comprising: preparing a ceramic substrate having a plurality of feedthrough holes filled with feedthrough electrodes; preparing a metal ring, and brazing the metal ring to the ceramic substrate; covering a plurality of feed-through electrodes with a solderable plating; then, a circuit board with electronic components and lands is prepared, and the circuit board is wire-bonded to the plating layer via the lands. In this case, since the metal ring is soldered to the ceramic substrate and then the circuit board is connected to the feedthrough electrode via the solderable plating layer, it is possible to solve the problem that the reliability of the feedthrough electrode is lowered due to an excessively high soldering temperature.
Description
Technical Field
The disclosure relates to the technical field of implantable devices, and in particular relates to a sealing method of an implantable device.
Background
Currently, implantable devices have been widely used in various aspects such as restoring body function, improving quality of life, or saving life. Such implantable devices include, for example, cardiac pacemakers, deep brain stimulators, cochlear implants, retinal stimulators, and the like, which are implantable in vivo.
Because the implantable device needs to be implanted into the body and remain in the body for a long time, the implantable device needs to be exposed to a complex physiological environment in the body, the physiological environment is often harsh, the implantable device may interact with tissues and organs around the implanted part after being implanted for a long time, for example, the material of the implantable device may undergo physical or chemical reactions such as aging, degradation, cracking, re-crosslinking and the like, thereby causing negative effects on the implanted object, for example, causing adverse biological reactions such as inflammation and the like. Therefore, requirements for biosafety, long-term implantation reliability, and the like are very high for implantable devices. Generally, in order to ensure biosafety, long-term implantation reliability, and the like of an implantable device, it is necessary to isolate a non-biosafety component such as a silicon-based chip, a Printed Circuit Board (PCB), and the like in the implantable device from an implanted site (such as blood, tissue, or bone) with a sealed housing having good biosafety and long-term implantation reliability on the one hand; on the other hand, functional leads for signal interaction with, for example, stimulation components, also need to be led out of the sealed housing.
In the existing feed-through ceramic manufacturing process, a chip or a printed circuit board is generally connected with a feed-through electrode in a ceramic substrate by bonding and the like, and then metal and ceramic are soldered, however, in the ceramic manufacturing process, the soldering temperature is often high, so that the connection between the chip or the printed circuit board and the feed-through electrode is easily damaged in the soldering process, and the reliability of the feed-through electrode is reduced.
Disclosure of Invention
In the conventional sealing method for an implantable device, after a ceramic substrate is manufactured, a chip or a printed circuit board is generally connected to a feed-through electrode in the ceramic substrate by bonding or the like, and then a metal ring is soldered to the ceramic substrate.
In view of the above, the present disclosure provides a method for sealing an implantable device, which can improve the reliability of a feed electrode in the implantable device.
To achieve the above object, the present disclosure provides a method for sealing an implantable device, comprising: preparing a ceramic substrate having a plurality of feedthrough holes filled with feedthrough electrodes; preparing a metal ring and brazing the metal ring to the ceramic substrate; covering said plurality of feed-through electrodes with a solderable plating; and preparing a circuit board with electronic components and lands, and wire-bonding the circuit board with the plating layer via the lands.
In the present disclosure, the ceramic substrate and the metal ring are soldered, and then the circuit board composed of circuit elements such as chips is connected to the circuit board by the solderable plating layer plated (by electroplating, electroless plating, etc.) on the feedthrough electrodes, so that the reliability of the connection between the ceramic substrate and the circuit can be enhanced.
In addition, in the sealing method of the implantable device according to the present disclosure, optionally, the feed-through electrode is made of at least one selected from platinum, iridium, niobium, tantalum, and gold. Therefore, the feed-through electrode can be matched with the performance parameters of the ceramic substrate, the strength of the connection structure can be improved, the electrical performance of the ceramic substrate can be improved, and the long-term reliability of the ceramic substrate can be further improved.
In addition, in the sealing method of the implantable device according to the present disclosure, optionally, the solderable plating layer includes a first plating layer and a second plating layer which are stacked, the first plating layer is made of one selected from gold, copper, silver, and tin, and the second plating layer is made of one selected from gold, tungsten, molybdenum manganese, silver, platinum, and nickel. More preferably, the first plating layer is plated with gold by electroplating, the second plating layer is plated with nickel by electroplating, or both the first plating layer and the second plating layer are plated with gold, so that reflow soldering or FC (Flip-chip) between the ceramic substrate and the circuit board can be realized, and the connection strength between the circuit board and the ceramic substrate can be enhanced.
In the method of sealing an implantable device according to the present disclosure, the ceramic of the ceramic substrate may be 99% or more of alumina. In this case, the bio-safety of the manufactured ceramic substrate and the airtightness of the formed sealing device are better.
In the sealing method of an implantable device according to the present disclosure, the ceramic substrate may be formed by stacking and firing a plurality of ceramic sheets. This makes it possible to more easily fire the ceramic substrate.
In addition, in the sealing method of an implantable device according to the present disclosure, optionally, between the ceramic sheets of adjacent layers, a patterned wiring conductor is disposed. The bonding ceramic substrate is formed by laminating and firing a plurality of ceramic sheets, so that the bonding force between the feed-through electrode, the patterned wiring and the ceramic substrate can be improved, thereby reducing the sintering temperature and improving the air tightness of the ceramic substrate.
In addition, in the sealing method of an implantable device according to the present disclosure, the feedthrough electrodes filling the feedthrough holes and the feedthrough holes of adjacent rows or adjacent columns are alternatively arranged. Therefore, the traveling path of the airtight leakage can be effectively blocked or prolonged, and the airtight performance of the ceramic substrate can be effectively improved.
In addition, in the sealing method of an implantable device according to the present disclosure, the plating layer is optionally formed by at least one of electroplating, electroless plating, ion plating, hot dip plating, thermal spray plating, immersion plating, and sputtering. The plating method of the present disclosure is preferably, but not limited to, electroplating, for example, in other embodiments, the plating layer can be more conveniently deposited on the surface of the ceramic substrate by using an electroless plating method without applying an external current by using a suitable reducing agent, so as to simplify the process steps.
In addition, in the sealing method of an implantable device according to the present disclosure, optionally, a metal cover cooperating with the metal ring is prepared, and the metal cover is bonded to the metal ring. Therefore, the implantable device can form a sealed structure, when the implantable device is used for implanting into a biological organism, the influence of the environment in the biological organism on components such as a circuit in the implantable device can be avoided, and the biological safety and the long-term implantation reliability of the implantable device can be improved.
Further, in the sealing method of an implantable device according to the present disclosure, optionally, the metal ring is disposed along an edge of the ceramic substrate. Therefore, the space utilization rate of the interior of the implanted device can be improved.
Compared with the traditional manufacturing process of the sealing structure, the sealing method of the implantable device can enhance the reliability of the connection between the ceramic substrate and the circuit.
Drawings
Fig. 1 is a flow chart diagram illustrating a method of sealing an implantable device according to an embodiment of the present disclosure.
Fig. 2 is a perspective structural view showing a sealing structure of an implantable device according to an embodiment of the present disclosure.
Fig. 3 is a cross-sectional view illustrating a sealing structure of the implantable device shown in fig. 2.
Fig. 4 is a schematic view showing the structure of the ceramic substrate of the present disclosure.
Fig. 5 is a partially enlarged view showing the feed electrode in fig. 4.
Fig. 6 is a partially enlarged view showing a modification 1 of the feed electrode in fig. 4.
Fig. 7 is a partial cross-sectional view schematically showing modification 1 of the sealing structure of the implantable device shown in fig. 2.
Fig. 8 is a partial cross-sectional view schematically showing modification 2 of the sealing structure of the implantable device shown in fig. 2.
Description of the symbols:
1 … sealing structure, 10 … ceramic substrate, 20 … metal ring, 30 … metal lid, 40 … plating, 50 … circuit board, 11,12,13,14 … ceramic sheet, 41 … first plating, 42 … second plating, 110(111, 112, 113, 114) … feed-through electrode, 120(121, 122, 123) … patterned wiring conductor, 130 … feed-through hole.
Detailed Description
The technical solutions of the present disclosure will be described clearly and completely with reference to the accompanying drawings of the present disclosure, and it is to be understood that the described embodiments are only a part of the embodiments of the present disclosure, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments disclosed herein without inventive step, are within the scope of the present disclosure.
It should be noted that if the present disclosure relates to directional indications (such as up, down, left, right, front, and rear … …), the directional indications are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indications are changed accordingly.
In addition, if the present disclosure has been described with reference to "first", "second", etc., the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying relative importance or implicit identification of the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between the various embodiments can be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not be within the protection scope of the present disclosure.
The sealing structure 1 according to the present disclosure may be suitable for implantable devices including, for example, cardiac pacemakers, deep brain stimulators, cochlear implants, retinal stimulators, etc., which may be implanted in vivo. The sealing structure 1 according to the present embodiment is also particularly suitable for high-density ceramic packaging technology.
Further, since the seal structure 1 according to the present embodiment needs to be placed in the body of an implantation subject, it is easily understood by those skilled in the art that the external material of the seal structure 1 according to the present disclosure, which is in contact with blood, tissue, or bone (including the constituent material of the ceramic substrate 10, the metal ring 20, the metal cap 30, and the feedthrough electrode 110 filled in the feedthrough hole 130 of the ceramic substrate 10, which will be described later), needs to satisfy both biosafety and long-term implantation reliability of prescribed standards (e.g., ISO10993 (international standard), GB/T16886 (chinese standard)).
Fig. 1 is a flow chart diagram illustrating a method of sealing an implantable device according to an embodiment of the present disclosure. Fig. 2 is a perspective structural view showing a sealing structure of an implantable device according to an embodiment of the present disclosure. Fig. 3 is a cross-sectional view illustrating a sealing structure of the implantable device shown in fig. 2.
In the present embodiment, as shown in fig. 1 to 3, the sealing structure 1 of the implantable device according to the present embodiment includes a ceramic substrate 10, a metal ring 20, and a metal cap 30. Firstly, a ceramic substrate 10 is manufactured, the ceramic substrate 10 serves as the bottom of the sealing structure 1, and a feedthrough electrode 110 or a feedthrough electrode array electrically connected (for example, electrically stimulated) with the outside of the sealing structure 1 is filled in a feedthrough hole 130 in the inside of the sealing structure 1; then welding the prepared metal ring 20 on the ceramic substrate 10 in a brazing mode; then covering the feed-through electrode 110 with a solderable plating layer 40 to join the circuit board 50 with electronic components and pads to the solderable plating layer 40; finally, the metal cap 30 is welded (e.g., laser welded, etc.) to the metal ring 20. Thereby, the seal structure 1 can be formed as a seal body having a housing space for housing the circuit board 50 by providing (e.g., soldering) the metal ring 20 and the metal cover 30 on the ceramic substrate 10.
In the manufacturing process of the conventional sealing structure 1, the circuit board 50 with electronic components and pads is connected to the feed-through electrodes 110 in the ceramic substrate 10 by bonding or laser welding, and then the metal ring 20 is soldered to the ceramic substrate 10, but since the soldering temperature of the metal ring 20 and the ceramic substrate 10 is too high, the connected structure of the circuit board 50 and the ceramic substrate 10 is damaged during soldering, and the function of the sealing structure 1 is affected.
It can be understood that in the sealing method of the implantable device according to the present disclosure, the ceramic substrate 10 and the metal ring 20 are soldered, and then the circuit board 50 composed of circuit elements such as chips is connected to the circuit board 50 through the solderable plating layer 40 plated (electroplated, chemically plated, etc.) on the feedthrough electrode 110, thereby skillfully avoiding the problem of poor connection reliability in the conventional method.
The following detailed description of the sealing method of the implantable device of the present disclosure is provided with reference to the accompanying drawings.
In this embodiment, as shown in fig. 1, the method for sealing an implantable device may include: preparing a ceramic substrate 10 having a plurality of feedthrough holes 130, and filling the feedthrough electrodes 110 in the plurality of feedthrough holes 130 (step S10); preparing a metal ring 20, and brazing the metal ring 20 to the ceramic substrate 10 (step S20); covering the plurality of feed-through electrodes 110 with a solderable plating 40 (step S30); preparing a circuit board 50 with electronic components and lands, and wire-bonding the circuit board 50 with the plating layer 40 via the lands (step S40); the metal cap 30 is prepared, and the metal cap 30 is joined to the metal ring 20 (step S50).
In the present embodiment, the ceramic substrate 10 in step S10 may be made of alumina (chemical formula Al)2O3Including single crystal sapphire and ruby, or polycrystalline α -Al2O3) Zirconium oxide (formula ZrO)2And it comprises at least one of magnesia-partially-stabilized zirconia (Mg-PSZ)), yttria-stabilized tetragonal zirconia polycrystal (Y-TZP), ceria-stabilized tetragonal zirconia polycrystal (Ce-TZP), or the like. Therefore, the requirements of the implanted medical device on the biocompatibility of materials can be met.
In the present embodiment, the ceramic substrate 10 may be composed of 96% or more (unless otherwise specified, the percentages herein each represent a mass fraction) of alumina (Al)2O3) And (4) forming. Further, the ceramic substrate 10 may preferably be made of 99% or moreIs formed of aluminum oxide. Further, the ceramic substrate 10 is more preferably made of alumina of 99.99% or more.
In general, in the ceramic substrate 10, alumina (Al) is used as the material2O3) The increase in the mass fraction increases the main crystal phase, and the physical properties of the ceramic substrate 10, such as compressive strength (MPa), bending strength (MPa), and elastic modulus (GPa), are also improved, and thus it is considered that better biosafety and long-term reliability are exhibited.
In addition, in the present embodiment, in some examples, as shown in fig. 2, the ceramic substrate 10 may have a substantially cylindrical shape. In the present embodiment, the shape of the ceramic substrate 10 is not particularly limited, and may be other regular shapes such as a cube, an elliptical cylinder, a triangular prism, or an irregular shape (including a combination of regular and irregular shapes). Therefore, the requirements of different implantable medical devices on the shape of the ceramic substrate 10 can be met.
Fig. 4 is a schematic view showing the structure of the ceramic substrate of the present disclosure. Referring to fig. 4, the ceramic substrate 10 may be formed by stacking and firing a plurality of ceramic sheets. In the present embodiment, the ceramic substrate 10 may include a plurality of ceramic sheets having a plurality of feedthrough holes 130, and the plurality of ceramic sheets may be sequentially laminated. In some examples, ceramic substrate 10 may be comprised of, for example, four layers of ceramic sheets (e.g., ceramic sheets 11,12,13, 14). As shown in fig. 4, a ceramic sheet 11, a ceramic sheet 12, a ceramic sheet 13, and a ceramic sheet 14 are sequentially laminated to form a ceramic substrate 10. However, the present embodiment is not limited thereto, and the number of ceramic sheets constituting the ceramic substrate 10 is not particularly limited, and may be, for example, two, three, or five or more ceramic sheets. Therefore, the ceramic substrate layers smaller or larger than four can be arranged according to different application requirements, so that the requirements of different implantable medical devices on the structure of the ceramic substrate 10 can be met.
In the present embodiment, as described above, the ceramic substrate 10 may be formed by stacking and firing a plurality of ceramic sheets. However, the present embodiment is not limited thereto, and it may be prepared in other manners, for example, by press-molding a plurality of ceramic sheets. Therefore, the process requirements under different conditions can be met.
In addition, in the present embodiment, the thickness of each of the ceramic sheets 11 to 14 is not particularly limited. In some examples, the thicknesses of the ceramic sheets 11 to 14 may be 0.05mm or more and 0.35mm or less, so as to be easy to process and have a good punching forming effect. In general, when the thickness of the ceramic sheet is too small, for example, less than 0.05mm, the processing is inconvenient because of its small thickness; when the thickness of the ceramic sheet is too large, for example, more than 0.35mm, the punching effect is poor due to the large thickness.
In the present embodiment, each ceramic sheet is preferably made of alumina (Al) of 96% or more (mass fraction, the same applies hereinafter)2O3) And (4) forming. More preferably, each ceramic sheet is composed of 99% or more of alumina (Al)2O3) And (4) forming. In some examples, each ceramic sheet 11-14 is composed of 99.99% or more alumina (Al)2O3) And (4) forming. Generally, in each ceramic sheet, alumina (Al) is attached to2O3) It is considered that the higher mass fraction of alumina (Al) is higher because the increase of the mass fraction increases the main crystal phase and the physical properties of each ceramic sheet are gradually improved, for example, the pre-compressive strength, the bending strength and the elastic modulus are improved accordingly2O3) Will exhibit better biosafety and long-term reliability.
In addition, in the present embodiment, each ceramic sheet may be composed of alumina ceramics having the same component content. In some examples, the ceramic sheets 11 to 14 are preferably made of 99.99% or more of alumina (Al)2O3) And (4) forming. However, the present embodiment is not limited thereto, and each ceramic sheet may be composed of different types of ceramics or may be composed of the same type of ceramics having different component contents. Therefore, the adjustment can be performed according to actual needs, so as to meet different requirements of the ceramic substrate 10 under different environmental conditions.
In the present embodiment, as shown in fig. 4, each of the ceramic sheets constituting the ceramic substrate 10 has a plurality of feedthrough holes 130.
In the present embodiment, the arrangement of the feedthrough holes 130 on each ceramic sheet may be the same. In some examples, the respective feedthrough apertures 130 between adjacent ceramic sheets may be aligned. Thus, it is possible to align the respective feed-through electrodes 110 filling the respective through holes between the adjacent ceramic sheets so that the feed-through electrodes 110 penetrate the respective ceramic sheets.
In addition, in the present embodiment, the arrangement of the respective feedthrough holes 130 may be different on the respective ceramic sheets. In some examples, the respective feedthrough apertures 130 between adjacent ceramic sheets may be staggered. Accordingly, the feedthrough electrodes 110 filling the through holes between the adjacent ceramic sheets are arranged in a staggered manner, so that the travel path of the hermetic leakage is effectively blocked or extended, and the hermetic performance of the ceramic substrate 10 can be effectively improved.
In addition, in the present embodiment, the arrangement shape of the feedthrough holes 130 is not particularly limited. In some examples, as shown in fig. 4, the feedthrough apertures 130 may be arranged in a regular shape, such as a rectangular array. In other examples, the feedthrough holes 130 may be arranged in other regular shapes, such as squares, circles, etc., and may be arranged in irregular shapes (including combinations of regular and irregular shapes).
In addition, in the present embodiment, the aperture diameter and the hole pitch of the feedthrough holes 130 are not particularly limited. In some examples, the aperture of the feedthrough holes 130 may be 50 μm to 500 μm, and the pitch between the feedthrough holes 130 (hole pitch) may be not less than 25 μm to 500 μm. In this case, the ceramic substrate 10 can be formed to satisfy the requirements of miniaturization and high integration density, and can be used, for example, as a ceramic substrate for an implantable medical device.
The number of the feedthrough holes 130 is not particularly limited, and may be determined according to specific needs, for example, the number of the feedthrough holes may be 1, or may be 2 or more.
Fig. 5 is a partially enlarged view showing the feed electrode in fig. 4. Fig. 6 is a partially enlarged view showing a modification 1 of the feed electrode in fig. 4.
In the present embodiment, as shown in fig. 5 and 6, the feedthrough electrodes 110 may be filled in feedthrough holes 130 provided on the respective ceramic sheets. Specifically, as depicted in fig. 6, feed-through electrodes 110 may include feed-through electrodes 111 in ceramic sheet 11, feed-through electrodes 112 in ceramic sheet 12, feed-through electrodes 113 in ceramic sheet 13, and feed-through electrodes 114 in ceramic sheet 14. In some examples, feed-through electrodes 110 may extend through the upper and lower surfaces of each ceramic sheet. Specifically, as shown in fig. 4, the feed-through electrodes 111 may penetrate the upper and lower surfaces of the ceramic sheet 11. Feed-through electrodes 112 may extend through the upper and lower surfaces of ceramic sheet 12. The feed-through electrodes 113 may penetrate the upper and lower surfaces of the ceramic sheet 13. The feedthrough electrodes 114 may extend through the upper and lower surfaces of the ceramic sheet 14.
In some examples, feedthrough electrode 110 may be constructed from at least one selected from platinum, iridium, niobium, tantalum, and gold. Feedthrough electrode 110 may be constructed of platinum for biosafety and long-term implant reliability. In some examples, the feedthrough electrode 110 may be composed of more than 99% platinum. In other examples, feedthrough electrode 110 may be composed of more than 99.99% platinum.
In some examples, the shape of the feedthrough holes 130 in each ceramic sheet is not particularly limited, and in some examples, the shape of the feedthrough holes 130 may be rectangular or trapezoidal, whereby the filled feedthrough electrodes 110 are also rectangular or trapezoidal. In other examples, the feedthrough aperture 130 may be cylindrical in shape, whereby the filled feedthrough electrode 110 is also cylindrical. After each ceramic sheet feedthrough 130 is filled with a feedthrough electrode 110, a complete ceramic sheet is formed therefrom.
In this embodiment, the feedthrough electrode 110 may be co-fired with the ceramic sheets 11-14 at a temperature of 1450-1600 ℃. Thus, the fired feed-through electrode 110 can be bonded to the ceramic substrate 10, thereby avoiding techniques such as welding between ceramic and metal, simplifying the process, and further improving the airtightness and long-term reliability of the ceramic substrate 10.
In addition, in some examples, as shown in fig. 5, the arrangement of the respective feedthrough holes 130 on the respective ceramic sheets may be the same. In this case, the individual ceramic sheets that have been filled with feed-through electrodes 110 may be bonded together, so that feed-through electrodes 110 may penetrate between the individual ceramic sheets. In addition, since the arrangement of the feedthrough holes 130 on the ceramic sheets is the same, the ceramic sheets can be bonded together, and the feedthrough electrodes 110 can be filled between the aligned feedthrough holes 130, thereby simplifying the process steps. In this case, the feed-through electrodes 110 may realize electrical connection of the upper surface 10a and the lower surface 10b of the ceramic substrate 10.
In addition, in some examples, as shown in fig. 6, the arrangement of the respective feedthrough holes 130 on the respective ceramic sheets may be different. In this case, in order to electrically connect the upper surface 10a and the lower surface 10b of the ceramic substrate 10, a patterned wiring conductor 120 may be formed between the respective ceramic sheets.
In some examples, as shown in fig. 6, between the ceramic sheets of adjacent layers, a patterned wiring conductor 120 (including patterned wiring conductors 121, 122, 123 arranged in sequence from top to bottom of the ceramic substrate 10) is arranged. In some examples, each feedthrough electrode 110 (including feedthrough electrodes 111, 112, 113, 114) can pass through the ceramic sheet 11 to the upper and lower surfaces of the ceramic sheet 14, respectively, and communicate via patterned wiring conductors 120, forming a conductive electrical connection. This can improve the electrical properties of the ceramic substrate 10.
In some examples, the patterned wire conductor 120 may be composed of one or more materials selected from among tungsten, molybdenum manganese, silver, gold, platinum, and alloys thereof. Preferably, the patterned wiring conductor 120 may be composed of platinum paste. Therefore, the patterned wiring conductor 120 can have a smaller resistance and better match with the performance parameters of the ceramic substrate 10, so that the connection strength between the patterned wiring conductor 120 and the ceramic substrate 10 is higher, and the long-term reliability of the ceramic substrate 10 can be effectively improved.
In the present embodiment, the shape of the wiring conductor pattern is not particularly limited. In some examples, the wiring conductor pattern may be a regular shape such as a straight line, an S-shape, a U-shape, or the like, or may be an irregular shape (including a combination of a regular shape and an irregular shape). Therefore, different requirements of different application environments can be met.
In this embodiment, the feedthrough electrode 110 can be co-fired with the patterned wiring conductor 120, the ceramic sheets 11 to 14 at a temperature of 1450 ℃ to 1600 ℃. Thus, the fired feed-through electrode 110 can be bonded to the patterned wiring conductor 120 and the ceramic substrate 10, thereby avoiding techniques such as welding between ceramic and metal, simplifying the process, and further improving the airtightness and long-term reliability of the ceramic substrate 10.
In the present embodiment, in step S20, the metal ring 20 is prepared, and the metal ring 20 is brazed to the ceramic substrate 10.
In some examples, the metal ring 20 may be disposed along an edge of the ceramic substrate 10. Of course, the brazing position of the metal ring 20 can be adjusted properly for the specific application and the appearance of the sealing structure 1, and is not limited herein.
In some examples, the metal ring 20 may be composed of titanium and its alloys, precious metals including gold, silver, and platinum group metals (ruthenium, rhodium, palladium, osmium, iridium, platinum) and their alloys, medical grade (biograd) stainless steel, tantalum, niobium, Nitinol (Nitinol), or nickel-cobalt-chromium-molybdenum alloy (MP35N), among others. In the present embodiment, the metal rings 20 may be made of the same metal material or different metal materials. In addition, the metal ring 20 is preferably made of a titanium or titanium alloy material.
In this embodiment, in step S30, the plurality of feed-through electrodes 110 are covered with the solderable plating layers 40.
Fig. 7 is a partial cross-sectional view schematically showing modification 1 of the sealing structure of the implantable device shown in fig. 2. Fig. 8 is a partial cross-sectional view schematically showing modification 2 of the sealing structure of the implantable device shown in fig. 2.
In addition, in the present embodiment, as shown in fig. 7 and 8, the cross-sectional area of the solderable plating layer 40 may be larger than the cross-sectional area of the feedthrough hole 130, whereby the area of the metal body of the solderable plating layer 40 exposed on the ceramic substrate 10 can be increased to enhance the airtightness of the ceramic substrate 10 and the reliability of the connection of the solderable plating layer 40 to the circuit board 50.
In some examples, as shown in fig. 7 and 8, the solderable plating 40 may include a first plating layer 41 and a second plating layer 42 that are stacked. The material of the first plating layer 41 may be selected from one of gold, copper, silver, or tin, and the material of the second plating layer 42 may be selected from one of gold, tungsten, molybdenum manganese, silver, platinum, or nickel. Here, the selection of the coating is premised on the compliance with biocompatibility. The plating layer formed by the material is matched with the performance parameters of the ceramic substrate 10, and the connecting structure of the plating layer and the ceramic substrate 10 is high in strength. Specifically, the first plating layer 41 and the second plating layer 42 may be formed of two layers of gold, and more preferably, the second plating layer 42 is formed of nickel, and then the first plating layer 41 formed of gold is plated on the nickel.
In addition, the solderable plating layer 40 may be formed by at least one of electroplating, electroless plating, ion plating, hot dip plating, thermal spraying, immersion plating, and sputtering. In some examples, solderable plating 40 may be electroplated. Examples of the present disclosure are not limited thereto, and for example, electroless plating or ion plating may be employed, and are not limited thereto.
In the present embodiment, in step S40, the circuit board 50 with the electronic components and the lands is prepared, and the circuit board 50 is wire-bonded to the solderable plating layer 40 via the lands.
The space inside the sealing structure 1 can be fully utilized by the method of soldering the metal ring 20 to the ceramic substrate 10 along the edge of the ceramic substrate 10, and then filling the gap or other portion between the circuit board 50 and the ceramic substrate 10 with resin such as silicone or epoxy resin.
As shown in fig. 7, the circuit board 50 may be a PCB board. The surface of the PCB board contains pins. For example, in some examples, the second plating layer 42 is made of nickel, the first plating layer 41 is made of gold, after the solderable plating layer 40 is manufactured, the solderable plating layer 40 can be connected to the pins of the PCB by the first plating layer 41, and then reflow soldering is performed, the nickel is melted by heating to fuse and solder the ceramic substrate 10 to the PCB pads by the pins, and then the reflow soldering is performed to cool the nickel to solidify the ceramic substrate 10 and the PCB, so as to connect the PCB to the ceramic substrate 10.
In some examples, as shown in fig. 8, circuit board 50 may be an integrated circuit board or chip, which is a leadless structure. At this time, the FC (Flip-chip) of the chip can be realized by connecting the solderable plating layer 40 with a suitable number of solder balls on the surface of the integrated circuit board or the chip.
Compared with the conventional method in which laser welding or bonding is used for connecting metal and metal (here, feed-through electrode 110 and a lead on circuit board 50), the present disclosure can more conveniently realize the connection between ceramic substrate 10 and circuit board 50 by plating a solderable plating layer 40 on feed-through electrode 110, and has higher connection reliability compared with the laser welding or bonding.
In step S50, the metal cap 30 is prepared, and the metal cap 30 is joined to the metal ring 20. In the present embodiment, the seal structure 1 according to the present embodiment can be obtained by welding (for example, laser welding) the metal cap 30 to the metal ring 20 located on the ceramic substrate 10.
In the present embodiment, the metal cover 30 may be made of titanium and its alloys, noble metals (including gold, silver, and platinum group metals (ruthenium, rhodium, palladium, osmium, iridium, platinum) and their alloys, medical grade (biograd) stainless steel, tantalum, niobium, Nitinol (Nitinol), or nickel-cobalt-chromium-molybdenum alloy (MP35N), etc., the metal cover 30 may also be made of titanium or a titanium alloy material.
As shown in fig. 2, the seal structure 1 has a substantially cylindrical shape. In the present embodiment, the dimensions of the cylindrical body of the typical seal structure 1 are such that the bottom surface has a diameter of about 5mm to 40mm and a height of about 5mm to 40 mm. Although the sealing structure 1 is shown here as a cylindrical structure, the shape of the sealing structure 1 is not particularly limited, and may be other shapes. For example, the sealing structure 1 may have a substantially rectangular parallelepiped shape, and the dimensions of a typical rectangular parallelepiped shape are, for example, 10mm in length, 10mm in width, and 10mm in height. The seal structure 1 may have other regular shapes such as a cylindrical shape, an elliptic cylindrical shape, and a triangular columnar shape, or may have an irregular shape (including a shape in which a regular shape and an irregular shape are combined).
The above description is only a preferred embodiment of the present disclosure, and not intended to limit the scope of the present disclosure, and all modifications and equivalents of the technical solutions of the present disclosure, which are made by using the contents of the present disclosure and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present disclosure.
Claims (10)
1. A method of sealing an implantable device,
the method comprises the following steps:
preparing a ceramic substrate having a plurality of feedthrough holes filled with feedthrough electrodes;
preparing a metal ring and brazing the metal ring to the ceramic substrate;
covering said plurality of feed-through electrodes with a solderable plating; and is
A circuit board with electronic components and lands is prepared, and the circuit board is wire-bonded to the plating layer via the lands.
2. The sealing method according to claim 1,
the feed-through electrode is composed of at least one selected from the group consisting of platinum, iridium, niobium, tantalum, and gold.
3. The sealing method according to claim 1,
the weldable plating layer comprises a first plating layer and a second plating layer which are laminated, wherein the material of the first plating layer is one selected from gold, copper, silver or tin, and the material of the second plating layer is one selected from gold, tungsten, molybdenum manganese, silver, platinum or nickel.
4. The sealing method according to claim 1,
the ceramic of the ceramic substrate is composed of 99% or more of alumina.
5. The sealing method according to claim 1,
the ceramic substrate is formed by laminating and firing a plurality of ceramic sheets.
6. The sealing method according to claim 5,
between the ceramic sheets of adjacent layers, patterned wiring conductors are arranged.
7. The sealing method according to claim 1,
the feed-through holes of adjacent rows or adjacent columns and the feed-through electrodes filled in the feed-through holes are arranged in a staggered manner.
8. The sealing method according to claim 1,
the plating layer is formed by at least one of electroplating, chemical plating, ion plating, hot dip plating, spray plating, penetration plating, and sputtering.
9. The sealing method according to any one of claims 1 to 8,
further comprising preparing a metal cap to mate with the metal ring and bonding the metal cap to the metal ring.
10. The sealing method according to claim 1,
the metal ring is disposed along an edge of the ceramic substrate.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210894017.0A CN115172187A (en) | 2019-03-30 | 2019-10-12 | Preparation method of sealing structure |
| CN202210896541.1A CN115172188A (en) | 2019-03-30 | 2019-10-12 | Implantable devices |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2019204274827 | 2019-03-30 | ||
| CN201920427482 | 2019-03-30 |
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| CN202210896541.1A Division CN115172188A (en) | 2019-03-30 | 2019-10-12 | Implantable devices |
| CN202210894017.0A Division CN115172187A (en) | 2019-03-30 | 2019-10-12 | Preparation method of sealing structure |
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| CN111769049A true CN111769049A (en) | 2020-10-13 |
| CN111769049B CN111769049B (en) | 2022-08-05 |
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| CN201910970197.4A Active CN111769049B (en) | 2019-03-30 | 2019-10-12 | Sealing method of implantable device |
| CN202210896541.1A Pending CN115172188A (en) | 2019-03-30 | 2019-10-12 | Implantable devices |
| CN201921711289.2U Active CN213911980U (en) | 2019-03-30 | 2019-10-12 | Electronic packaging body of implantable device and retina stimulator |
| CN202210894017.0A Pending CN115172187A (en) | 2019-03-30 | 2019-10-12 | Preparation method of sealing structure |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202210896541.1A Pending CN115172188A (en) | 2019-03-30 | 2019-10-12 | Implantable devices |
| CN201921711289.2U Active CN213911980U (en) | 2019-03-30 | 2019-10-12 | Electronic packaging body of implantable device and retina stimulator |
| CN202210894017.0A Pending CN115172187A (en) | 2019-03-30 | 2019-10-12 | Preparation method of sealing structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114406515A (en) * | 2022-01-28 | 2022-04-29 | 中国科学院上海微系统与信息技术研究所 | Welding method of brain electrode device and brain electrode device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105503205A (en) * | 2015-12-31 | 2016-04-20 | 深圳硅基仿生科技有限公司 | Manufacturing method of seal structure of implantation device |
| CN105771089A (en) * | 2016-02-04 | 2016-07-20 | 中国科学院深圳先进技术研究院 | Manufacturing method of implantable artificial retina ceramic packaging body |
| CN108966491A (en) * | 2017-12-29 | 2018-12-07 | 深圳硅基仿生科技有限公司 | The ceramic substrate and its manufacturing method of airtight feedthrough |
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2019
- 2019-10-12 CN CN201910970197.4A patent/CN111769049B/en active Active
- 2019-10-12 CN CN202210896541.1A patent/CN115172188A/en active Pending
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105503205A (en) * | 2015-12-31 | 2016-04-20 | 深圳硅基仿生科技有限公司 | Manufacturing method of seal structure of implantation device |
| CN105771089A (en) * | 2016-02-04 | 2016-07-20 | 中国科学院深圳先进技术研究院 | Manufacturing method of implantable artificial retina ceramic packaging body |
| CN108966491A (en) * | 2017-12-29 | 2018-12-07 | 深圳硅基仿生科技有限公司 | The ceramic substrate and its manufacturing method of airtight feedthrough |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114406515A (en) * | 2022-01-28 | 2022-04-29 | 中国科学院上海微系统与信息技术研究所 | Welding method of brain electrode device and brain electrode device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN213911980U (en) | 2021-08-10 |
| CN115172188A (en) | 2022-10-11 |
| CN115172187A (en) | 2022-10-11 |
| CN111769049B (en) | 2022-08-05 |
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Address after: 518000 area a, 4th floor, building 3, Tingwei Industrial Park, No.6 Liufang Road, Xin'an street, Shenzhen City, Guangdong Province Patentee after: Shenzhen Silicon Bionics Technology Co.,Ltd. Address before: 518000 area a, 4th floor, building 3, Tingwei Industrial Park, No.6 Liufang Road, Xin'an street, Shenzhen City, Guangdong Province Patentee before: SHENZHEN SIBIONICS TECHNOLOGY Co.,Ltd. |