CN111762787B - Combined preparation method of chlorosilane and quartz - Google Patents
Combined preparation method of chlorosilane and quartz Download PDFInfo
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- CN111762787B CN111762787B CN201910256569.7A CN201910256569A CN111762787B CN 111762787 B CN111762787 B CN 111762787B CN 201910256569 A CN201910256569 A CN 201910256569A CN 111762787 B CN111762787 B CN 111762787B
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- C01B33/08—Compounds containing halogen
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- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
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Abstract
The invention discloses a method for jointly preparing chlorosilane and quartz, which comprises the following steps of: (1) Carrying out solid-liquid separation on the mortar of the diamond wire cut silicon wafer to obtain finished silicon powder; (2) Performing chlorination reaction on finished silicon powder serving as a raw material and a chlorinating agent to prepare chlorosilane to obtain first reaction residues; (3) Carrying out high-temperature oxidation reaction or high-temperature chlorination reaction on the first reaction residue and oxygen or chlorine, and carrying out gas-solid separation to obtain second reaction residue; (4) Acid leaching the second reaction residue to remove metal oxide impurities to obtain a suspension; (5) Carrying out solid-liquid separation on the suspension to obtain solid silicon dioxide; (6) And heating the solid silicon dioxide to be molten, and cooling to obtain fused quartz. The invention fully recycles the silicon element in the mortar of the diamond wire-electrode cutting silicon chip, thereby reducing the waste of the silicon element; the cyclic utilization of silicon element in the polysilicon industrial chain is realized, the environmental pollution is avoided, and the production cost of chlorosilane is reduced.
Description
Technical Field
The invention belongs to the technical field of silicon material production, and particularly relates to a combined preparation method of chlorosilane and quartz.
Background
The multi-wire cutting technology for diamond wires has the advantages of low silicon consumption, high cutting efficiency and the like, and the sand wire cutting is gradually taken as the mainstream technology of the multi-wire cutting at present. However, in the slicing process of single crystal or polycrystalline silicon, silicon powder generated when the diamond wire cuts the silicon rod has very high surface energy due to extremely fine particle size, and the temperature is high in the cutting process, so that part of the silicon powder is oxidized into silicon dioxide, and in addition, the waste silicon powder separated from the cutting waste liquid is in contact with air in the storage process to generate oxidation reaction, and the content of the silicon dioxide is further increased.
The silicon powder recovered from the cutting waste liquid has complex components, contains silicon, oxygen, carbon and metal impurity elements, has large specific surface area and small density, increases the recovery difficulty of the silicon element, and causes waste and serious environmental pollution due to the discarded cutting waste liquid.
Disclosure of Invention
The invention aims to solve the technical problem of the prior art and provides a method for preparing chlorosilane and quartz jointly, which is used for fully recycling silicon elements in mortar of a diamond wire-cut silicon wafer and reducing the waste of the silicon elements.
The technical scheme adopted for solving the technical problem of the invention is to provide a method for jointly preparing chlorosilane and quartz, which comprises the following steps:
(1) Carrying out solid-liquid separation on the mortar of the diamond wire cut silicon wafer to obtain finished silicon powder, wherein the finished silicon powder comprises elemental silicon and silicon dioxide;
(2) Performing chlorination reaction on finished silicon powder serving as a raw material and a chlorinating agent to prepare chlorosilane, so as to obtain first reaction residues, wherein the first reaction residues comprise metal impurities, residual elemental silicon and silicon dioxide;
(3) Carrying out high-temperature oxidation reaction or high-temperature chlorination reaction on the first reaction residue and oxygen or chlorine, and carrying out gas-solid separation to obtain a second reaction residue, wherein the second reaction residue comprises solid silicon dioxide, metal impurities, residual elemental silicon and oxygen react to generate solid metal oxide and solid silicon dioxide, or the metal impurities, residual elemental silicon and chlorine react to generate gas metal chloride and gas chlorosilane;
(4) Acid leaching the second reaction residue to remove metal oxide impurities in the second reaction residue to obtain a suspension;
(5) Carrying out solid-liquid separation on the suspension to obtain solid silicon dioxide;
(6) And heating the solid silicon dioxide to be molten, and cooling to obtain fused quartz.
The silicon dioxide in the mortar for cutting the silicon wafer by the diamond wire is in an amorphous state, is convenient to purify relative to crystalline phase silicon dioxide, is a high-quality raw material for preparing fused quartz, and greatly reduces the cost for preparing the fused quartz.
Quartz is an amorphous state (glass state) of silicon oxide (quartz, silica), is a main raw material in industries such as refractory materials, ceramic raw materials, glass raw materials, epoxy resin casting, electronic sealing materials, electric light sources, medical treatment, casting and the like, and is also an ideal filler in chemical industries such as paint, coating and the like.
Preferably, the temperature of the chlorination reaction in the step (2) is 200 to 600 ℃.
Preferably, the chlorinating agent is used in excess in step (2).
Preferably, the temperature of the high-temperature oxidation reaction in the step (3) is 1000 to 1300 ℃.
Preferably, the temperature of the high-temperature oxidation reaction in the step (3) is 1100 to 1200 ℃.
Preferably, the high-temperature chlorination reaction in the step (3) is performed in a chlorination furnace, when the first reaction residue and chlorine gas are subjected to the high-temperature chlorination reaction, the metal impurities, the residual elemental silicon and the chlorine gas are reacted to generate metal chloride gas and chlorosilane gas, hydrolyzing the tail gas at the outlet of the high-temperature chlorination furnace, when no white silicon dioxide hydrolysate is generated after hydrolysis, stopping introducing the chlorine gas into the chlorination furnace to continue the reaction, otherwise, continuing introducing the chlorine gas to react.
Preferably, the high-temperature oxidation reaction in the step (3) is performed in an oxidation furnace, when the content of the elemental silicon in the sample in the oxidation furnace is less than 100ppm, the oxygen is stopped from being introduced into the oxidation furnace to continue the reaction, otherwise, the oxygen is continuously introduced to continue the reaction.
Preferably, the acid used for acid leaching in the step (4) is any one of hydrochloric acid, sulfuric acid and nitric acid, and the concentration of the acid used for acid leaching is 10 to 20mas%.
Preferably, the solid-liquid separation in the step (5) is performed by filtering, and the filtered solid is rinsed until the pH value of the rinsing solution reaches above 6.
Preferably, the melting temperature in the step (6) is 1500 to 1800 ℃.
Preferably, the chlorinating agent in the step (2) is chlorine gas and/or hydrogen chloride.
Preferably, the step (6) is further followed by the steps of:
(7) And crushing and grading the cooled fused quartz to obtain fused quartz powder.
The method for jointly preparing chlorosilane and quartz has the following remarkable effects:
1. the silicon element in the mortar of the diamond wire cut silicon wafer is fully recycled, so that the waste of the silicon element is reduced; the cyclic utilization of silicon element in the polycrystalline silicon industrial chain is realized, and the environmental pollution is avoided; a low-price silicon source is provided for the production of chlorosilane, and the production cost of chlorosilane is reduced;
2. the silicon dioxide in the mortar for recovering the diamond wire-electrode cutting silicon wafer exists in an amorphous state, the reaction activity is higher, the purification is convenient, the preparation process of fused quartz powder is simplified, and the economic benefit is improved.
Drawings
FIG. 1 is a flow chart of a process for the combined preparation of chlorosilanes and quartz in example 2 of this invention;
FIG. 2 is a flow chart of a process for the combined preparation of chlorosilane and quartz of example 5 of the present invention.
Detailed Description
In order to make the technical solutions of the present invention better understood, the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Example 1
The embodiment provides a method for jointly preparing chlorosilane and quartz, which comprises the following steps of:
(1) Carrying out solid-liquid separation on the mortar of the diamond wire cut silicon wafer to obtain finished silicon powder, wherein the finished silicon powder comprises elemental silicon and silicon dioxide;
(2) Performing chlorination reaction on finished silicon powder serving as a raw material and a chlorinating agent to prepare chlorosilane, so as to obtain first reaction residues, wherein the first reaction residues comprise metal impurities, residual elemental silicon and silicon dioxide;
(3) Carrying out high-temperature oxidation reaction or high-temperature chlorination reaction on the first reaction residue and oxygen or chlorine, and carrying out gas-solid separation to obtain a second reaction residue, wherein the second reaction residue comprises solid silicon dioxide, metal impurities, residual elemental silicon and oxygen react to generate solid metal oxide and solid silicon dioxide, or the metal impurities, residual elemental silicon and chlorine react to generate gas metal chloride and gas chlorosilane;
(4) Acid leaching the second reaction residue to remove metal oxide impurities in the second reaction residue to obtain a suspension;
(5) Carrying out solid-liquid separation on the suspension to obtain solid silicon dioxide;
(6) And heating the solid silicon dioxide to be molten, and cooling to obtain fused quartz.
The method for jointly preparing chlorosilane and quartz in the embodiment has the following remarkable effects:
1. the silicon element in the mortar for cutting the silicon wafer by the diamond wire is fully recycled, so that the waste of the silicon element is reduced; the cyclic utilization of silicon element in the polycrystalline silicon industrial chain is realized, and the environmental pollution is avoided; a low-price silicon source is provided for the production of chlorosilane, and the production cost of chlorosilane is reduced;
2. the silicon dioxide in the mortar for recovering the diamond wire-electrode cutting silicon wafer exists in an amorphous state, the reaction activity is higher, the purification is convenient, the preparation process of fused quartz powder is simplified, and the economic benefit is improved.
Example 2
As shown in fig. 1, this embodiment provides a method for jointly preparing chlorosilane and quartz, including the following steps:
(1) Carrying out solid-liquid separation on the mortar of the diamond wire cut silicon wafer, wherein the solid-liquid separation operation comprises settling and filter pressing, the separated solid matter is processed, the processing operation comprises crushing, granulating and drying, and granular finished product silicon powder is obtained, wherein the crushing procedure crushes the separated solid matter until the particle size is smaller than 100 meshesFine particles, the granulation process processes fine particle silicon powder into granular silicon powder with the particle size of 0.5 to 2.0mm, the drying process dries the water content of the granular silicon powder to be below 500ppm, and the bulk density of the obtained finished product silicon powder is 0.7 to 1.2Kg/m 3 The finished product silicon powder comprises simple substance silicon and silicon dioxide.
Silicon powder generated when the silicon wafer or the silicon rod is cut by the diamond wire is deposited in the cutting slurry together with other impurities to form waste cutting slurry, and the cutting performance of the waste cutting slurry is greatly reduced, so that the waste cutting slurry needs to be replaced periodically to obtain cutting mortar. Silicon powder generated when the diamond wire cuts a silicon wafer or a silicon rod has very high surface energy due to extremely fine particle size, and meanwhile, the temperature is high in the cutting process, so that part of the silicon powder is oxidized into silicon dioxide. The cutting mortar comprises the main components of polyethylene glycol, pure water, silicon powder and silicon dioxide, and also comprises a small amount of diamond powder and iron powder.
(2) Performing chlorination reaction on finished product silicon powder serving as a raw material and an excessive chlorinating agent in a fluidized bed reactor, wherein the reaction is a gas-solid heterogeneous reaction, the chlorinating agent is chlorine, the temperature of the chlorination reaction is 400 ℃, chlorosilane is generated through reaction of free silicon in the finished product silicon powder, first reaction residues are obtained, the first reaction residues comprise metal impurities, residual elemental silicon and silicon dioxide, the main component of the first reaction residues is silicon dioxide, the specific surface area of the first reaction residues is large, the density of the first reaction residues is low, the first reaction residues are taken out from the top of a fluidized bed by reaction air flow and enter a bag filter, silicon dioxide solids carried in synthetic gas are separated in the bag filter and are discharged through an ash discharge port at the bottom of the bag filter, the filtered gas phase is discharged from the top of the bag filter and is further purified in a washing tower, the gas phase is leached by leacheate in the washing tower to be liquid-phase hydrolysis, and gas discharged from the washing tower is introduced into a condenser to be condensed into chlorosilane liquid;
(3) The first reaction residue discharged from an ash discharge port at the bottom of the bag filter enters a high-temperature chlorination reaction furnace, the first reaction residue and chlorine gas are subjected to high-temperature chlorination reaction, the temperature of the high-temperature chlorination reaction is 1000 ℃, metal impurities, residual elemental silicon and the chlorine gas react to generate gas metal chloride and gas chlorosilane, gas-solid separation is carried out to obtain second reaction residue, the second reaction residue comprises solid silicon dioxide, and tail gas of the high-temperature chlorination furnace is discharged from an outlet at the top of the high-temperature chlorination furnace to a hydrolyzer for hydrolysis; after the high-temperature chlorination reaction, the second reaction residue contains trace metal chloride, and the content of the metal chloride is not more than 0.001mas%.
In the step (3), in order to maintain the temperature in the high-temperature chlorination reactor at 1000 ℃, finished silicon powder, a carbonaceous reducing agent and oxidized silicon are mixed according to a certain proportion and then added into the high-temperature chlorination reactor, elemental silicon in the mixture reacts with chlorine to generate chlorosilane and simultaneously release a large amount of heat, and the temperature of the chlorination reactor is maintained at 1000 ℃ by adjusting the feeding proportion; the silicon in the oxidation state in the mixture reacts with carbon and chlorine to generate chlorosilane.
Specifically, the high-temperature chlorination reaction in this embodiment is performed in a chlorination furnace, when the first reaction residue and chlorine gas are subjected to the high-temperature chlorination reaction, the metal impurities, the residual elemental silicon and the chlorine gas are reacted to generate metal chloride gas and chlorosilane gas, the tail gas at the outlet of the top of the high-temperature chlorination furnace is hydrolyzed, and when no white silicon dioxide hydrolysate is generated after hydrolysis, it is indicated that the elemental silicon has reacted, and the chlorine gas is stopped from being introduced into the chlorination furnace to continue the reaction. Otherwise, continuing to introduce chlorine gas for reaction.
(4) Acid leaching the second reaction residue for 2 hours, wherein the acid used for acid leaching is any one of hydrochloric acid, sulfuric acid and nitric acid, the concentration of the acid used for acid leaching is 20mas%, and metal oxide impurities in the second reaction residue are removed to obtain a suspension;
(5) Carrying out solid-liquid separation on the suspension, wherein the specific method of the solid-liquid separation is filtering, leaching the filtered solid for multiple times until the pH value of leacheate reaches more than 6 to obtain a solid silicon dioxide filter cake, and returning the filtered filtrate and the leached leacheate to be used as acid for acid leaching so as to utilize waste acid;
(6) And heating the solid silica filter cake to be molten, wherein the melting temperature is 1600 ℃, stopping heating after all the filter cakes are completely molten, and cooling the molten liquid to obtain the high-purity molten quartz block with the purity of more than 99.95 percent.
(7) And crushing and grading the high-purity fused quartz block obtained after cooling by using a centrifugal crusher to obtain high-purity fused quartz powder with a certain granularity, wherein the purity of the high-purity fused quartz powder is more than 99.95%.
The silicon dioxide in the mortar for cutting the silicon wafer by the diamond wire in the embodiment is in an amorphous state, is convenient to purify compared with crystalline phase silicon dioxide, is a high-quality raw material for preparing fused quartz, and greatly reduces the cost for preparing the fused quartz.
The method for jointly preparing chlorosilane and quartz in the embodiment has the following remarkable effects:
1. the silicon element in the mortar for cutting the silicon wafer by the diamond wire is fully recycled, so that the waste of the silicon element is reduced; the cyclic utilization of silicon element in the polysilicon industrial chain is realized, and the environmental pollution is avoided; a low-price silicon source is provided for the production of chlorosilane, and the production cost of chlorosilane is reduced;
2. the silicon dioxide in the mortar for recovering the diamond wire-electrode cutting silicon wafer exists in an amorphous state, the reaction activity is higher, the purification is convenient, the preparation process of fused quartz powder is simplified, and the economic benefit is improved.
Example 3
This example provides a method for preparing chlorosilane and quartz jointly, which differs from the method in example 2 in that:
the temperature of the chlorination reaction in the step (2) was 200 ℃.
The temperature of the high-temperature chlorination reaction in the step (3) is 1100 ℃.
The concentration of the acid used in the acid leaching in the step (4) is 10mas%.
The melting temperature in step (6) was 1800 ℃.
Example 4
This example provides a method for the combined preparation of chlorosilane and quartz, which differs from the method in example 2 in that:
the temperature of the chlorination reaction in the step (2) was 600 ℃.
The temperature of the high-temperature chlorination reaction in the step (3) is 1200 ℃.
The concentration of the acid used in the acid leaching in the step (4) was 15mas%.
The melting temperature in step (6) was 1500 ℃.
Example 5
As shown in fig. 2, this embodiment provides a method for jointly preparing chlorosilane and quartz, including the following steps:
(1) Carrying out solid-liquid separation on mortar of the diamond wire-electrode cutting silicon wafer, wherein the solid-liquid separation operation comprises settling and filter pressing, processing the separated solid substances, and the processing operation comprises crushing, granulating and drying to obtain granular finished silicon powder, wherein the separated solid substances are crushed into fine particles with the particle size of less than 100 meshes in the crushing procedure, the fine particle silicon powder is processed into granular silicon powder with the particle size of 0.5-2.0 mm in the granulating procedure, the moisture content in the granular silicon powder is dried to be below 500ppm in the drying procedure, and the stacking density of the obtained finished silicon powder is 0.7-1.2 Kg/m 3 The finished product silicon powder comprises simple substance silicon and silicon dioxide.
Silicon powder generated when the diamond wire cuts a silicon wafer or a silicon rod is deposited in cutting slurry together with other impurities to form waste cutting slurry, so that the cutting performance of the waste cutting slurry is greatly reduced, and the waste cutting slurry needs to be replaced periodically to obtain cutting mortar. Silicon powder generated when a silicon wafer or a silicon rod is cut by a diamond wire has very high surface energy due to extremely fine particle size, and meanwhile, the temperature is high in the cutting process, so that part of the silicon powder is oxidized into silicon dioxide. The cutting mortar mainly comprises polyethylene glycol, pure water, silicon powder and silicon dioxide, and also comprises a small amount of diamond powder and iron powder.
(2) Performing chlorination reaction on finished silicon powder serving as a raw material and an excessive chlorinating agent in a fluidized bed reactor, wherein the reaction is a gas-solid heterogeneous reaction, the chlorinating agent is chlorine and hydrogen chloride (the molar ratio is 1);
(3) Enabling first reaction residues discharged from an ash discharge port at the bottom of the bag filter to enter a high-temperature oxidation reaction furnace, carrying out high-temperature oxidation reaction on the first reaction residues and oxygen, wherein the temperature of the high-temperature oxidation reaction is 1300 ℃, reacting metal impurities, residual simple substance silicon and oxygen to generate solid metal oxide and solid silicon dioxide, and carrying out gas-solid separation to obtain second reaction residues, wherein the second reaction residues comprise the solid silicon dioxide;
specifically, in this embodiment, the high-temperature oxidation reaction is performed in an oxidation furnace, when the content of elemental silicon in a sample in the oxidation furnace is less than 100ppm, the oxygen is stopped from being introduced into the oxidation furnace for continuous reaction, otherwise, the oxygen is continuously introduced for reaction;
(4) Acid leaching the second reaction residue for 2 hours, wherein the acid used for acid leaching is any one of hydrochloric acid, sulfuric acid and nitric acid, the concentration of the acid used for acid leaching is 10mas%, and metal oxide impurities in the second reaction residue are removed to obtain a suspension;
(5) Carrying out solid-liquid separation on the suspension, wherein the specific method of the solid-liquid separation is filtration, leaching the filtered solid for multiple times until the pH value of leacheate reaches more than 6 to obtain a solid silicon dioxide filter cake, and returning the filtered filtrate and the leached leacheate to be used as acid for acid leaching so as to utilize waste acid;
(6) And heating the solid silica filter cake to be molten, wherein the melting temperature is 1500 ℃, stopping heating after all the filter cakes are completely molten, and cooling the molten liquid to obtain the high-purity molten quartz block with the purity of more than 99.95 percent.
(7) And crushing and grading the high-purity fused quartz block obtained after cooling by using a centrifugal crusher to obtain high-purity fused quartz powder with a certain granularity, wherein the purity of the high-purity fused quartz powder is more than 99.95%.
The silicon dioxide in the mortar for cutting the silicon wafer by the diamond wire in the embodiment is in an amorphous state, is convenient to purify compared with crystalline phase silicon dioxide, is a high-quality raw material for preparing fused quartz, and greatly reduces the cost for preparing the fused quartz.
The method for jointly preparing chlorosilane and quartz in the embodiment has the following remarkable effects:
1. the silicon element in the mortar of the diamond wire cut silicon wafer is fully recycled, so that the waste of the silicon element is reduced; the cyclic utilization of silicon element in the polycrystalline silicon industrial chain is realized, and the environmental pollution is avoided; a low-price silicon source is provided for the production of chlorosilane, and the production cost of chlorosilane is reduced;
2. the silicon dioxide in the mortar for recovering the diamond wire-electrode cutting silicon wafer exists in an amorphous state, the reaction activity is higher, the purification is convenient, the preparation process of fused quartz powder is simplified, and the economic benefit is improved.
Example 6
This example provides a method for preparing chlorosilane and quartz jointly, which differs from the method in example 5 in that:
the temperature of the chlorination reaction in the step (2) was 200 ℃.
The temperature of the high-temperature oxidation reaction in the step (3) is 1100 ℃.
The concentration of the acid used in the acid leaching in the step (4) is 15mas%.
The melting temperature in step (6) was 1800 ℃.
Example 7
This example provides a method for preparing chlorosilane and quartz jointly, which differs from the method in example 5 in that:
the temperature of the chlorination reaction in the step (2) was 400 ℃.
The temperature of the high-temperature oxidation reaction in the step (3) is 1200 ℃.
The concentration of the acid used in the acid leaching in the step (4) was 20mas%.
The melting temperature in step (6) was 1700 ℃.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and scope of the invention, and such modifications and improvements are also considered to be within the scope of the invention.
Claims (7)
1. A method for jointly preparing chlorosilane and quartz is characterized by comprising the following steps of:
(1) Carrying out solid-liquid separation on the mortar of the diamond wire cut silicon wafer to obtain finished silicon powder, wherein the finished silicon powder comprises elemental silicon and silicon dioxide;
(2) Performing chlorination reaction on finished silicon powder serving as a raw material and a chlorinating agent at the temperature of 200-600 ℃, wherein free silicon in the finished silicon powder reacts to generate chlorosilane, so as to prepare chlorosilane, and obtain first reaction residue, wherein the first reaction residue comprises metal impurities, residual elemental silicon and silicon dioxide, and the main component of the first reaction residue is silicon dioxide;
(3) Carrying out high-temperature chlorination reaction on the first reaction residue and chlorine gas, and carrying out gas-solid separation to obtain a second reaction residue, wherein the temperature of the high-temperature chlorination reaction is any one of 1000 ℃, 1100 ℃ and 1200 ℃, and the second reaction residue comprises solid silicon dioxide, and metal impurities, residual elemental silicon and the chlorine gas react to generate a gas metal chloride and a gas chlorosilane;
(4) Acid leaching the second reaction residue to remove metal oxide impurities in the second reaction residue to obtain a suspension;
(5) Carrying out solid-liquid separation on the suspension to obtain solid silicon dioxide;
(6) And heating the solid silicon dioxide to be molten, and cooling to obtain fused quartz.
2. The combined preparation method of chlorosilane and quartz as claimed in claim 1, wherein the high temperature chlorination reaction in step (3) is performed in a chlorination furnace, when the first reaction residue and chlorine gas are subjected to high temperature chlorination reaction, the metal impurities, residual elemental silicon and chlorine gas are reacted to generate metal chloride gas and chlorosilane gas, the tail gas at the outlet of the high temperature chlorination furnace is hydrolyzed, when no white silicon dioxide hydrolysate is generated after hydrolysis, the chlorine gas is stopped from being introduced into the chlorination furnace for continuous reaction, otherwise, the chlorine gas is continuously introduced for reaction.
3. The combined preparation method of chlorosilane and quartz according to claim 1, wherein the acid used for acid leaching in step (4) is any one of hydrochloric acid, sulfuric acid and nitric acid, and the concentration of the acid used for acid leaching is 10-20 mas%.
4. The combined preparation method of chlorosilane and quartz as claimed in claim 1, wherein the solid-liquid separation in step (5) is performed by filtering, and the filtered solid is rinsed until the pH value of the rinsing solution reaches above 6.
5. The combined preparation method of chlorosilane and quartz as claimed in any one of claims 1, 3 and 4, wherein the melting temperature in the step (6) is 1500-1800 ℃.
6. The combined preparation method of chlorosilane and quartz as claimed in any one of claims 1, 3 and 4, wherein the chlorinating agent in step (2) is chlorine gas and/or hydrogen chloride.
7. The combined preparation method of chlorosilane and quartz as claimed in any one of claims 1, 3 and 4, wherein the step (6) is further followed by the following steps:
(7) And crushing and grading the cooled fused quartz to obtain fused quartz powder.
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