CN111755063A - Photovoltaic intelligent junction box test circuit and control method - Google Patents
Photovoltaic intelligent junction box test circuit and control method Download PDFInfo
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- CN111755063A CN111755063A CN202010630530.XA CN202010630530A CN111755063A CN 111755063 A CN111755063 A CN 111755063A CN 202010630530 A CN202010630530 A CN 202010630530A CN 111755063 A CN111755063 A CN 111755063A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
Abstract
The invention discloses a photovoltaic intelligent junction box test circuit and a control method, wherein the photovoltaic intelligent junction box test circuit comprises a power circuit and a FLASH test circuit; the power circuit comprises an input capacitor C21, a freewheeling diode D21 and an output capacitor C22, wherein the input capacitor C21 is connected in parallel with a photovoltaic module, the anode of the photovoltaic module is connected with a first output terminal, the cathode of the photovoltaic module is connected with a second output terminal, and the output capacitor C22 is connected in parallel with the freewheeling diode D21; a switch tube Q21 is connected between the positive electrode of the photovoltaic module and the first output terminal or between the negative electrode of the photovoltaic module and the second output terminal, and the switch tube Q21 is a power MOS tube and is driven by the FLASH test circuit. The photovoltaic intelligent junction box test circuit and the control method provided by the invention can ensure reliable operation of FLASH test, and have the characteristics of good safety, high reliability and high response speed.
Description
Technical Field
The invention relates to a photovoltaic test circuit and a control method, in particular to a photovoltaic intelligent junction box test circuit and a control method.
Background
In recent years, the technical scheme of the intelligent photovoltaic junction box is diversified, and the theme is to optimize and improve the photovoltaic power generation efficiency and improve the fire disaster coping mechanism of the photovoltaic system, such as the turn-off function and the like. At present, a photovoltaic intelligent junction box with a higher value in the aspects of installation and maintenance mainly has three functions.
1. MPPT function: the maximum power tracking technology and the control device are configured for each battery board through software and hardware matching, the technology can improve the reduction of the power generation efficiency of the power station caused by the characteristics of different battery boards in the battery board array to the maximum extent, reduces the influence of the wooden barrel effect on the power station efficiency, can greatly improve the power generation efficiency of the power station, can improve the system power generation efficiency by 47.5 percent from a test result to the maximum extent, increases the investment income, and greatly shortens the investment recovery period.
2. Function is turned off to unusual situation intelligence such as conflagration: when a fire disaster happens, a software algorithm arranged in the junction box can be matched with a hardware circuit to judge whether an abnormality occurs within 10 milliseconds, the connection between each battery panel is cut off actively, the 1500V voltage is reduced to a voltage which can be accepted by a human body and is about 30V, and the safety of fire fighters is ensured.
The existing intelligent junction box testing method mainly comprises the steps that (1) Flash testing is carried out firstly, and then the intelligent junction box is installed; (2) and physically short-circuiting the main loop switching tube for testing. Both methods are costly and have low operability.
How the photovoltaic intelligent junction box can really meet the pain point and difficulty of the photovoltaic market needs to find the best balance in the aspects of electrical functions of the junction box, service life of electronic devices, cost of the intelligent junction box, investment income and the like. However, at present, the Flash test of the intelligent junction box is very complex and low in efficiency, so that great labor cost is brought, and improvement is urgently needed.
Disclosure of Invention
The invention aims to provide a photovoltaic intelligent junction box test circuit and a control method, which can ensure the reliable operation of FLASH test and have the characteristics of good safety, high reliability and high response speed.
The invention adopts the technical scheme to solve the technical problems and provides a photovoltaic intelligent junction box test circuit which comprises a power circuit and a FLASH test circuit; the power circuit comprises an input capacitor C21, a freewheeling diode D21 and an output capacitor C22, wherein the input capacitor C21 is connected in parallel with a photovoltaic module, the anode of the photovoltaic module is connected with a first output terminal, the cathode of the photovoltaic module is connected with a second output terminal, and the output capacitor C22 is connected in parallel with the freewheeling diode D21; a switch tube Q21 is connected between the positive electrode of the photovoltaic module and the first output terminal or between the negative electrode of the photovoltaic module and the second output terminal, the switch tube Q21 is a power MOS tube, and the power MOS tube is driven by the FLASH test circuit.
Furthermore, the negative electrode of the photovoltaic module is connected with the drain electrode of a switching tube Q21, the source electrode of the switching tube Q21 is connected with the second output terminal, the cathode of the freewheeling diode D21 is connected with the first output terminal, the anode of the freewheeling diode D21 is connected with the source electrode of the switching tube Q21, and the base electrode of the switching tube Q21 is connected with the FLASH test circuit.
Further, the FLASH test circuit comprises a switch tube Q1, a switch tube Q2, a diode D1, a diode D2 and a diode D3, wherein a source of the switch tube Q1 is connected with a positive electrode of a driving power supply through a resistor R1, an anode of the diode D3 is connected with a source of a switch tube Q1, a cathode of the diode D3 is connected with a base of a switch tube Q21, a drain of the switch tube Q1 is connected with ground, an anode of the diode D1 is connected with an output end of a CPU IO port, a cathode of the diode D1 is connected with a resistor R3 in series and then connected with a base of a switch tube Q2, an anode of the diode D2 is connected with a positive electrode of a photovoltaic module, a cathode of the diode D2 is connected with a cathode of a resistor R4 in series and then connected with a cathode of a zener diode 1, an anode of the zener diode ZD1 is connected with a base of the switch tube Q2, a cathode of the diode D2 is connected with a drain of the diode ZD2 through a capacitor C2, the drain of the switching tube Q2 is connected with the ground, the source of the switching tube Q2 is connected with one end of a capacitor C2, and the other end of the capacitor C2 is connected with the base of the switching tube Q1 and is connected with the positive electrode of the driving power supply through a resistor R2.
The invention also provides a control method of the photovoltaic intelligent junction box test circuit for solving the technical problem, wherein the control method comprises the following steps: s1) detecting a FLASH enabling prohibition value in the EEPROM when the photovoltaic intelligent junction box is powered on and operated, if the FLASH enabling prohibition value is 0, starting PWM (pulse-width modulation) output through the output end of the IO port of the CPU (central processing unit), and quickly realizing the starting of a main loop power MOS (metal oxide semiconductor) tube through a software method; s2) closing PWM output after the power-on time exceeds the testing time of the Flash equipment, and setting the output end of the IO port of the CPU to be high level, thereby closing the hardware Flash testing circuit; s3), when detecting that the power-on operation time of the photovoltaic intelligent junction box exceeds the aging time of the junction box, setting a FLASH enabling prohibition value to be 1 and writing the FLASH enabling prohibition value into the EEPROM, so that the FLASH test circuit is immediately closed after the next power-on operation of the photovoltaic intelligent junction box.
Compared with the prior art, the invention has the following beneficial effects: the photovoltaic intelligent junction box test circuit and the control method provided by the invention can charge the capacitor at the moment of electrification, can conveniently open and close the power MOS tube of the main loop, provide a loop for a Flash test, ensure the reliable operation of the FLASH test and the safe and reliable actual operation, and simultaneously ensure that the MOS tube of the main loop can be opened only when the input voltage of a photovoltaic component is greater than a certain value by a hardware circuit, thereby avoiding potential safety hazards; the method has the characteristics of good safety, high reliability, high response speed, low cost and high efficiency.
Drawings
FIG. 1 is a schematic diagram of a photovoltaic intelligent junction box test circuit according to the invention.
FIG. 2 is a schematic diagram of a FLASH test circuit for a photovoltaic intelligent junction box in an embodiment of the present invention;
FIG. 3 is a schematic diagram of another FLASH test circuit for a photovoltaic intelligent junction box in an embodiment of the present invention;
fig. 4 is a control flow chart of a photovoltaic intelligent junction box test circuit in the embodiment of the invention.
Detailed Description
The invention is further described below with reference to the figures and examples.
FIG. 1 is a schematic diagram of a photovoltaic intelligent junction box test circuit according to the invention.
Referring to fig. 1, the photovoltaic intelligent junction box test circuit provided by the invention is characterized by comprising a power circuit and a FLASH test circuit; the power circuit comprises an input capacitor C21, a freewheeling diode D21 and an output capacitor C22, a switch tube Q21 is connected between the anode of the photovoltaic module and the first output terminal or between the cathode of the photovoltaic module and the second output terminal, the switch tube Q21 is a power MOS tube, and the power MOS tube is driven by the FLASH test circuit.
The input capacitor C21 is connected in parallel with the photovoltaic module, the positive pole of the photovoltaic module is connected with the first output terminal 1-1, the negative pole of the photovoltaic module is connected with the drain of the switch tube Q21, the source of the switch tube Q21 is connected with the second output terminal 1-2, the cathode of the freewheeling diode D21 is connected with the first output terminal 1-1, the anode of the freewheeling diode D21 is connected with the source of the switch tube Q21, and the output capacitor C22 is connected in parallel with the freewheeling diode D21, which is just a circuit loop of the turn-off circuit and can also be an optimizer circuit, and the main loop MOS can also be in a positive loop.
Referring to fig. 2, in the FLASH test circuit, one end of a resistor R1 is connected to the positive electrode Vdrive + of the driving power supply, the other end of the resistor R1 is connected to the source of a switching tube Q1, the anode of the diode D3 is connected to the source of a switching tube Q1, the cathode of a diode D3 is directly connected to the base of the switching tube Q21, the drain of the switching tube Q1 is connected to ground, the output PA1 of the CPU IO port is connected to the anode of the diode D1, the cathode of the diode D1 is connected to the base of a switching tube Q2 after being connected in series with a resistor R3, the positive electrode PV + of the photovoltaic module is connected to the anode of a diode D2, the cathode of the diode D2 is connected to the cathode of a resistor R4 after being connected in series with the cathode of a zener diode 1, the anode of the zener diode 1 is connected to the base of a switching tube Q2, one end of a capacitor C1 is connected to the cathode of the diode D5 and the other end is, the other end of the capacitor is connected with the drain electrode of a switching tube Q2, the drain electrode of a switching tube Q2 is connected with the ground, the source electrode of a switching tube Q2 is connected with one end of a capacitor C2, and the other end of a capacitor C2 is connected with the base electrode of a switching tube Q1; the capacitor C2 has the function of providing a delay time to ensure that hardware automatically closes the Flash test circuit after the Flash test is finished, the voltage stabilizing diode ZD1 can realize that the Flash test circuit is opened only when the starting voltage is lower than the component open-circuit voltage by a few volts, the function of the voltage stabilizing diode ZD1 is to ensure that the Flash circuit is not triggered in the actual operation process of the intelligent junction box, the voltage stabilizing diode ZD1 can also be a TVS (transient voltage suppressor), and the switching tube Q1 and the switching tube Q2 are not limited to MOS (metal oxide semiconductor) tubes, but also can. The capacitor C1 provides sufficient driving voltage for the switching tube Q2, and ensures that the switching tube Q2 is always on in the FLASH test process, so that the switching tube Q1 is always off, and the switching tube Q1 outputs high level.
Referring now to fig. 3, the circuit of fig. 3 is another implementation of the circuit of fig. 2, which has the advantages of few components and the disadvantages of having a power loop MOS driver circuit at the back stage, such as IR1168STRPBF MOS driver circuit of ama, ME9926 CEM9926 driver circuit of ADI, T427E TC4427EOA dual high-speed power MOSFET driver of MICR, etc.; the Flash test circuit in FIG. 2 can directly drive MOS, and can also be connected with a power loop MOS tube drive circuit; the anode PV + of the photovoltaic module is connected with the anode of a diode D4, the cathode of a diode D4 is connected with one end of a capacitor C3, the other end of the capacitor C3 is connected with the ground, the cathode of the diode D4 is also connected with the cathode of a zener diode ZD2 after being connected with a resistor R6 in series, the anode of the zener diode ZD2 is connected with the source of a switching tube Q3, the anode of a diode D6 is also connected with the source of the switching tube Q3, and the cathode of a diode D6 is connected with the base of the switching tube Q21 through an MOS driving circuit; an output end PA1 of the CPU IO port is connected with an anode of a diode D5, and a cathode of the diode D5 is connected with a base electrode of a switching tube Q3 after being connected with a resistor R7 in series; the positive electrode Vdrive + of the driving power supply is connected with a resistor R8 in series and then is connected to the base electrode of a switch tube Q3; the drain electrode of the switch tube Q3 is connected with the ground, the resistor R9 is connected with the capacitor C4 in parallel and then connected with the base electrode and the drain electrode of the switch tube Q3 respectively, the capacitor C4 is used for providing a delay time to ensure that the Flash test circuit is automatically closed by hardware after the Flash test is finished, the voltage stabilizing diode ZD1 is used for ensuring that the Flash circuit cannot be triggered in the actual operation process of the intelligent junction box, and the capacitor C3 is used for providing enough energy for the driving of the main loop MOS tube.
Referring now to fig. 4, the control flow chart is that the program first starts the timer, reads the EEPROM FLASH enable disable value, and turns off the PWM output immediately with a value of 1, sets the IO port PA1 to high level, turns off the hardware FLASH test circuit, and turns on the PWM output with a FLASH enable disable value of 0. The power MOS of the main loop can be quickly turned on by software only aiming at the condition that the starting time of some CPUs is short, and the PWM output of the CPUs with low response speed can not be turned on, and the switching tube Q21 is turned on by hardware. And when the program running time exceeds 8 hours (not limited to 8 hours, which is longer than the aging time of the junction box), and the EEPROM FLASH enabling prohibition value is 0, setting the EEPROM FLASH enabling prohibition value to be 1 and writing the EEPROM FLASH enabling prohibition value into the EEPROM, and ensuring that the next Flash testing circuit is directly closed after the program runs.
The photovoltaic intelligent junction box test circuit and the control method provided by the invention effectively solve the FLASH test problem of the photovoltaic assembly intelligent junction box, and can realize the same simplicity and convenience as the common photovoltaic junction box test, simple operation and high efficiency. The Flash test circuit has the advantages that the capacitor is charged at the moment of power-on, then the MOS tube of the main loop is started to provide a loop for Flash test, after the MOS tube is started for a certain time, hardware and software can close the drive output of the FLASH test part, the Flash test circuit is enabled to only play a role during FLASH test, the safe and reliable field operation is guaranteed, and the Flash test circuit has the advantages of good safety, high reliability and high response speed.
Although the present invention has been described with respect to the preferred embodiments, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (4)
1. A photovoltaic intelligent junction box test circuit is characterized by comprising a power circuit and a FLASH test circuit; the power circuit comprises an input capacitor C21, a freewheeling diode D21 and an output capacitor C22, wherein the input capacitor C21 is connected in parallel with a photovoltaic module, the anode of the photovoltaic module is connected with a first output terminal, the cathode of the photovoltaic module is connected with a second output terminal, and the output capacitor C22 is connected in parallel with the freewheeling diode D21; a switch tube Q21 is connected between the positive electrode of the photovoltaic module and the first output terminal or between the negative electrode of the photovoltaic module and the second output terminal, the switch tube Q21 is a power MOS tube, and the power MOS tube is driven by the FLASH test circuit.
2. The photovoltaic intelligent junction box test circuit as claimed in claim 1, wherein a negative electrode of the photovoltaic module is connected with a drain electrode of a switch tube Q21, a source electrode of the switch tube Q21 is connected with the second output terminal, a cathode electrode of the freewheeling diode D21 is connected with the first output terminal, an anode electrode of the freewheeling diode D21 is connected with a source electrode of a switch tube Q21, and a base electrode of the switch tube Q21 is connected with the FLASH test circuit.
3. The photovoltaic intelligent junction box test circuit as claimed in claim 2, wherein the FLASH test circuit comprises a switch tube Q1, a switch tube Q2, a diode D1, a diode D2 and a diode D3, the source of the switch tube Q1 is connected with the positive pole of the driving power supply through a resistor R1, the anode of the diode D3 is connected with the source of the switch tube Q1, the cathode of the diode D3 is connected with the base of the switch tube Q21, the drain of the switch tube Q1 is connected with ground, the anode of the diode D1 is connected with the output end of the CPU IO port, the cathode of the diode D1 is connected with a resistor R3 in series and then connected with the base of the switch tube Q2, the anode of the diode D2 is connected with the positive pole of the photovoltaic module, the cathode of the diode D2 is connected with a resistor R4 in series and then connected with the cathode of a zener diode ZD1, the zener diode ZD1 is connected with the base of the anode of the switch tube Q2, the cathode of the diode D2 is grounded through a capacitor C1, a resistor R5 is connected between the base electrode and the drain electrode of the switching tube Q2, the drain electrode of the switching tube Q2 is connected with the ground, the source electrode of the switching tube Q2 is connected with one end of a capacitor C2, and the other end of the capacitor C2 is connected with the base electrode of the switching tube Q1 and is connected with the positive electrode of a driving power supply through a resistor R2.
4. The control method of the photovoltaic intelligent junction box test circuit according to claim 3, characterized by comprising the following steps:
s1) detecting a FLASH enabling prohibition value in the EEPROM when the photovoltaic intelligent junction box is powered on and operated, if the FLASH enabling prohibition value is 0, starting PWM (pulse-width modulation) output through the output end of the IO port of the CPU (central processing unit), and quickly realizing the starting of a main loop power MOS (metal oxide semiconductor) tube through a software method;
s2) closing PWM output after the power-on time exceeds the testing time of the Flash equipment, and setting the output end of the IO port of the CPU to be high level, thereby closing the hardware Flash testing circuit;
s3), when detecting that the power-on operation time of the photovoltaic intelligent junction box exceeds the aging time of the junction box, setting a FLASH enabling prohibition value to be 1 and writing the FLASH enabling prohibition value into the EEPROM, so that the FLASH test circuit is immediately closed after the next power-on operation of the photovoltaic intelligent junction box.
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| CN202010630530.XA CN111755063A (en) | 2020-07-03 | 2020-07-03 | Photovoltaic intelligent junction box test circuit and control method |
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| CN202010630530.XA CN111755063A (en) | 2020-07-03 | 2020-07-03 | Photovoltaic intelligent junction box test circuit and control method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112510998A (en) * | 2020-11-26 | 2021-03-16 | 武汉美格科技股份有限公司 | Solar MPPT booster unit |
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2020
- 2020-07-03 CN CN202010630530.XA patent/CN111755063A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112510998A (en) * | 2020-11-26 | 2021-03-16 | 武汉美格科技股份有限公司 | Solar MPPT booster unit |
| CN112510998B (en) * | 2020-11-26 | 2022-03-11 | 武汉美格科技股份有限公司 | Solar MPPT booster unit |
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