CN111742480A - Inverter with a voltage regulator - Google Patents
Inverter with a voltage regulator Download PDFInfo
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- CN111742480A CN111742480A CN201980014089.8A CN201980014089A CN111742480A CN 111742480 A CN111742480 A CN 111742480A CN 201980014089 A CN201980014089 A CN 201980014089A CN 111742480 A CN111742480 A CN 111742480A
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- bus bar
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- bar electrode
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
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Abstract
Provided is an inverter which is reduced in size, weight, and cost. In an inverter (1000), a first bus bar electrode (1022) electrically connects a first electrode (1081) of a smoothing capacitor (1020) and a semiconductor power module (1021). The second bus bar electrode (1023) electrically connects the second electrode (1082) of the smoothing capacitor (1020) and the semiconductor power module (1021). The semiconductor power module (1021) is separated from the first electrode (1081) by a first distance (L1) and from the second electrode (1082) by a second distance (L2). The second distance (L2) is longer than the first distance (L1). The side wall portion (1120) of the second bus bar electrode (1023) is along the side surface of the smoothing capacitor (1020). A bottom portion (1121) of the second bus bar electrode (1023) is in contact with a second electrode (1082) of the smoothing capacitor (1020). The storage space (1140) of the side wall (1120) stores the smoothing capacitor (1020).
Description
Technical Field
The present invention relates to an inverter. The present application is based on japanese patent application No. 2018-029517, filed on 22/2/2018. This application claims priority to this application. The contents of which are incorporated by reference in their entirety in this application.
Background
Conventionally, a power conversion device includes a capacitor module and a bus bar connected to the capacitor module. For example, in the power conversion device described in japanese patent application laid-open No. 2015-167428, the positive terminal of the capacitor module and the positive power terminal of the semiconductor module are connected to the positive bus bar. The negative terminal of the capacitor module and the negative power terminal of the semiconductor module are connected to a negative bus bar.
In the capacitor module, the positive electrode plate is connected to one electrode of the plurality of capacitor elements. The negative electrode plate is connected to the other electrode of the plurality of capacitor elements. A portion of the positive electrode plate becomes the positive terminal. A portion of the negative electrode plate becomes a negative terminal. Each capacitor element is a thin film capacitor.
In the capacitor module, the plurality of capacitor elements are sealed by the sealing member and are accommodated in the capacitor case.
Patent document 1: japanese patent laid-open publication No. 2015-
Disclosure of Invention
Problems to be solved by the invention
In the power conversion device described in japanese patent application laid-open No. 2015-167428, a plurality of capacitor elements are sealed by a sealing member and are accommodated in a capacitor case. Therefore, a space for disposing the sealing member and the capacitor case is required. Further, the inverter may become heavy corresponding to the weight of the sealing member and the capacitor case. Moreover, the cost of the inverter may increase corresponding to the cost of the sealing member and the capacitor case. Therefore, it is difficult to reduce the size, weight, and cost of the inverter.
In view of the above problems, an object of the present invention is to provide an inverter that is small in size, light in weight, and low in cost.
Means for solving the problems
An exemplary embodiment of the present invention is directed to an inverter.
The inverter includes a smoothing capacitor, a semiconductor power module, a first bus bar electrode, and a second bus bar electrode.
The smoothing capacitor smoothes the direct current. The smoothing capacitor has one end, the other end, and a side surface. The side extends from one end to the other. The smoothing capacitor includes a first electrode and a second electrode. The first electrode is configured at one end. The second electrode is configured at the other end.
The semiconductor power module switches a direct current to generate an alternating current. The semiconductor power module is separated from the first electrode by a first distance and from the second electrode by a second distance. The semiconductor power module is disposed at a position such that the second distance is longer than the first position.
The first bus bar electrode electrically connects the first electrode with the semiconductor power module.
The second bus bar electrode electrically connects the second electrode with the semiconductor power module.
The second bus bar electrode includes a sidewall portion and a bottom portion. The side wall portion has a receiving space and a bottom end, and is along a side surface of the smoothing capacitor. The bottom is arranged at the bottom end and is contacted with the second electrode. The housing space houses the smoothing capacitor.
Effects of the invention
According to an exemplary embodiment of the present invention, the smoothing capacitor provided in the inverter is housed in the second bus bar electrode for electrical connection. Therefore, the number of components for housing the smoothing capacitor can be reduced. Therefore, an inverter that is small, light, and low in cost can be provided.
Drawings
Fig. 1 is a block diagram schematically illustrating an inverter of the first embodiment.
Fig. 2 is a plan view schematically illustrating a smoothing capacitor, a first bus bar electrode, a second bus bar electrode, and a semiconductor power module provided in the inverter according to the first embodiment.
Fig. 3 is a perspective view schematically illustrating a smoothing capacitor, a first bus bar electrode, and a second bus bar electrode provided in the inverter according to the first embodiment.
Fig. 4 is a perspective view schematically illustrating a state in which the front end portions of the first bus bar electrode and the second bus bar electrode are omitted from the smoothing capacitor, the first bus bar electrode, and the second bus bar electrode provided in the inverter of the first embodiment.
Fig. 5 is a plan view schematically illustrating a smoothing capacitor, a first bus bar electrode, and a second bus bar electrode provided in the inverter according to the first embodiment.
Fig. 6 is a cross-sectional view schematically illustrating a smoothing capacitor and a second bus bar electrode provided in the inverter of the first embodiment.
Fig. 7 is a cross-sectional view schematically illustrating the second bus bar electrode, the case, and the electrical insulating material provided in the inverter according to the first embodiment.
Fig. 8 is a cross-sectional view schematically illustrating the first bus bar electrode, the second bus bar electrode, the cooler, and the electrical insulating material provided in the inverter according to the first embodiment.
Fig. 9 is a perspective view schematically illustrating a smoothing capacitor provided in an inverter according to a modification of the first embodiment.
Fig. 10 is a perspective view schematically illustrating a second bus bar electrode provided in an inverter according to a modification of the first embodiment.
Fig. 11 is a perspective view schematically illustrating a smoothing capacitor, a first bus bar electrode, and a second bus bar electrode provided in an inverter according to a modification of the first embodiment.
Fig. 12 is a perspective view schematically illustrating a smoothing capacitor, a first bus bar electrode, and a second bus bar electrode provided in an inverter according to a modification of the first embodiment.
Fig. 13 is a cross-sectional view schematically illustrating a smoothing capacitor and a second bus bar electrode provided in an inverter according to a modification of the first embodiment.
Fig. 14 is a sectional view schematically illustrating the structure of the comparison object.
Detailed Description
1 first embodiment
1.1 overview of the inverter
A first exemplary embodiment of the present invention relates to an inverter.
Fig. 1 is a block diagram schematically illustrating an inverter of the first embodiment.
The inverter 1000 illustrated in fig. 1 is an inverter device that operates as a power conversion device that converts direct current into three-phase alternating current. The dc power and a control signal are input to the inverter 1000. The inverter 1000 smoothes an input dc current and generates a three-phase ac current by switching the smoothed dc current in accordance with an input control signal. The generated three-phase alternating current is output from the inverter 1000. The output three-phase alternating current is supplied to the motor. The generated three-phase alternating current may be supplied to a load other than the motor. Inverter 1000 may generate an alternating current other than a three-phase alternating current. For example, the inverter 1000 may also generate a single-phase alternating current.
The inverter 1000 includes a smoothing capacitor 1020, a semiconductor power module 1021, a first bus bar electrode 1022, and a second bus bar electrode 1023.
The semiconductor power module 1021 generates an alternating current by switching the smoothed direct current in accordance with a control signal input to the inverter 1000.
The two bus bar electrodes composed of the first bus bar electrode 1022 and the second bus bar electrode 1023 connect the smoothing capacitor 1020 with the semiconductor power module 1021, so that the smoothed direct current is transmitted from the smoothing capacitor 1020 to the semiconductor power module 1021. The direct-current potentials of the first bus bar electrode 1022 and the second bus bar electrode 1023 are different from each other.
1.2 Structure of smoothing capacitor, first bus bar electrode, second bus bar electrode, and semiconductor Power Module
Fig. 2 is a plan view schematically illustrating a smoothing capacitor, a semiconductor power module, a first bus bar electrode, and a second bus bar electrode provided in the inverter according to the first embodiment. Fig. 3 is a perspective view schematically illustrating a smoothing capacitor, a first bus bar electrode, and a second bus bar electrode provided in the inverter according to the first embodiment. Fig. 4 is a perspective view schematically illustrating a state in which the front end portions of the first bus bar electrode and the second bus bar electrode are omitted from the smoothing capacitor, the first bus bar electrode, and the second bus bar electrode provided in the inverter of the first embodiment. Fig. 5 is a plan view schematically illustrating a smoothing capacitor, a first bus bar electrode, and a second bus bar electrode provided in the inverter according to the first embodiment. Fig. 6 is a cross-sectional view schematically illustrating a smoothing capacitor, a first bus bar electrode, and a second bus bar electrode provided in the inverter according to the first embodiment.
The smoothing capacitor 1020 includes a plurality of capacitors 1040. Each of the capacitors 1040 has a cylindrical shape.
The semiconductor power module 1021 is separated from the first electrode 1081 by a first distance L1 and from the second electrode 1082 by a second distance L2. The semiconductor power module 1021 is arranged such that the second distance L2 is longer than the first distance L1. Therefore, the first electrode 1081 is one end electrode located at a side close to the semiconductor power module 1021. The second electrode 1082 is the other end electrode located on the side away from the semiconductor power module 1021.
The first bus bar electrode 1022 electrically connects the first electrode 1081 with the semiconductor power module 1021. The first bus bar electrode 1022 is composed of a metal. The metal may be any one of a pure metal and an alloy.
The first bus bar electrode 1022 includes a plate-shaped portion 1100.
The plate-shaped portion 1100 is in contact with the first electrode 1081 and is connected to the first electrode 1081. The plate-shaped portion 1100 is connected to the first electrode 1081, and the plate-shaped portion 1100 is electrically connected to the first electrode 1081.
The first bus bar electrode 1022 further includes a first leading end portion 1101.
The first leading end portion 1101 is connected to the plate-like portion 1100. The first tip portion 1101 is connected to the plate-shaped portion 1100, and the first tip portion 1101 is electrically connected to the plate-shaped portion 1100.
The first front end portion 1101 is connected to a power module terminal of the semiconductor power module 1021. The first front end portion 1101 is connected to a power module terminal of the semiconductor power module 1021, and the first front end portion 1101 is electrically connected to the semiconductor power module 1021.
The plate-shaped portion 1100 is electrically connected to the first electrode 1081, the first front end portion 1101 is electrically connected to the plate-shaped portion 1100 and the semiconductor power module 1021, and the first electrode 1081 is electrically connected to the semiconductor power module 1021 via the plate-shaped portion 1100 and the first front end portion 1101.
The second bus bar electrode 1023 electrically connects the second electrode 1082 with the semiconductor power module 1021. The second bus bar electrode 1023 is made of metal. The metal may be any one of a pure metal and an alloy.
The second bus bar electrode 1023 includes a side wall portion 1120 and a bottom portion 1121.
The side wall portion 1120 is connected to the bottom portion 1121. The side wall portion 1120 is connected to the bottom portion 1121, and the side wall portion 1120 is electrically connected to the bottom portion 1121.
The bottom portion 1121 is in contact with the second electrode 1082 and is connected to the second electrode 1082. The bottom portion 1121 is electrically connected to the second electrode 1082, and the bottom portion 1121 is electrically connected to the second electrode 1082.
Second bus bar electrode 1023 further includes second front end portion 1122.
Second front end portion 1122 is connected to side wall portion 1120. Second front end portion 1122 is connected to side wall portion 1120, and second front end portion 1122 is electrically connected to side wall portion 1120.
Second front end portion 1122 is connected to a power module terminal of semiconductor power module 1021. Second front end portion 1122 is connected to a power module terminal of semiconductor power module 1021, and second front end portion 1122 is electrically connected to semiconductor power module 1021.
The sidewall portion 1120 is electrically connected to the bottom portion 1121, the bottom portion 1121 is electrically connected to the second electrode 1082, the second front end portion 1122 is electrically connected to the sidewall portion 1120 and the semiconductor power module 1021, and the second electrode 1082 is electrically connected to the semiconductor power module 1021 via the bottom portion 1121, the sidewall portion 1120, and the second front end portion 1122.
The second bus bar electrode 1023 has a socket-like shape that fits the shape of the smoothing capacitor 1020, thereby accommodating the smoothing capacitor 1020.
The side wall portion 1120 has a cylindrical shape. The side wall portion 1120 includes a receiving space 1140 and a bottom end 1141. The bottom portion 1121 is disposed at the bottom side end 1141. The side wall portion 1120 having a cylindrical shape may be replaced with a side wall portion formed of a member having a groove. The accommodation space 1140 of the cylindrical side wall portion 1120 is a space inside the hole. The bottom side end 1141 of the side wall portion 1120 having a cylindrical shape is one of both ends in the longitudinal direction of the cylinder. The housing space of the side wall portion having the channel-like shape is a space inside the groove. The bottom-side end of the side wall portion having the channel-like shape is one of both ends in the longitudinal direction of the channel.
The side wall portion 1120 accommodates the smoothing capacitor 1020. The side wall portion 1120 extends along the side surface 1062 of the smoothing capacitor 1020. In a state where the side wall portion 1120 is along the side surface 1062 of the smoothing capacitor 1020, the side wall portion 1120 is in close contact with or close to the side surface 1062 of the smoothing capacitor 1020. The bottom portion 1121 is in contact with the second electrode 1082. The bottom portion 1121 of the side wall portion 1120 extending along the side surface 1062 of the smoothing capacitor 1020 is in contact with the second electrode 1082, and the smoothing capacitor 1020 is positioned in the accommodating space 1140 by the side wall portion 1120 and the bottom portion 1121.
1.3 advantages of the configuration in which the smoothing capacitor is housed in the second bus bar electrode
1.3.1 sequence
Hereinafter, the structure of the comparison object, the problem of the structure of the comparison object, and the advantage of the structure in which the smoothing capacitor 1020 is accommodated in the second bus bar electrode 1023 over the structure of the comparison object will be described in order.
1.3.2 construction of comparison objects
In the structure of the comparison object schematically illustrated in fig. 14, the smoothing capacitor 900, the first bus bar electrode 902, and the second bus bar electrode 904 are housed in a case 906 and fixed to the case 906. The smoothing capacitor 900, the first bus bar electrode 902, and the second bus bar electrode 904 are bonded to the case 906 with the resin material 908, whereby the smoothing capacitor 900, the first bus bar electrode 902, and the second bus bar electrode 904 are fixed to the case 906.
The case 906 is made of metal, epoxy resin, or the like. The resin material 908 is made of epoxy resin or the like.
One end of the case 906 is provided with an external connection terminal 910. The external connection terminals 910 include high-potential-side and low-potential-side external connection terminals. The external connection terminals on the high potential side and the low potential side are close to each other and electrically connected to the power module terminals of the semiconductor power module.
The smoothing capacitor 900 includes a plurality of capacitors 920. Each of the plurality of capacitors 920 has a cylindrical shape or a rectangular parallelepiped shape, and includes a first capacitor electrode 940 and a second capacitor electrode 942. The first capacitor electrode 940 is disposed at one end of the smoothing capacitor 900, on a side close to the external connection terminal 910, and on a side close to the semiconductor power module. The second capacitor electrode 942 is disposed at the other end of the smoothing capacitor 900, on the side away from the external connection terminal 910, and on the side away from the semiconductor power module.
The first bus bar electrode 902 is connected to the first capacitor electrode 940 included in each capacitor 920 disposed inside the case 906, and is connected to one external connection terminal 960. The first bus bar electrode 902 is disposed along the shortest path connecting the first capacitor electrode 940 and one external connection terminal 960. The first bus bar electrode 902 extends from one external connection terminal 960 and is connected to a power module terminal of the semiconductor power module.
The second bus bar electrode 904 is connected to a second capacitor electrode 942 included in each capacitor 920 disposed inside the case 906, and is connected to the other external connection terminal 962. The second bus bar electrode 904 is disposed along a path connecting the second capacitor electrode 942 and the other external connection terminal 962 and passing through the vicinity of the resin material 908 covering the side surface of the smoothing capacitor 900. The second bus bar electrode 904 extends from the other external connection terminal 962, and is connected to a power module terminal of the semiconductor power module.
The first bus bar electrode 902 is connected to the first capacitor electrode 940 provided in each capacitor 920, and the second bus bar electrode 904 is connected to the second capacitor electrode 942 provided in each capacitor 920, whereby the plurality of capacitors 920 are electrically connected in parallel. By connecting the plurality of capacitors 920 electrically in parallel as necessary, the electrostatic capacitance necessary for the smoothing capacitor 900 is ensured.
1.3.3 problem points of the structure of the comparison object
In the structure to be compared, the smoothing capacitor 900 is covered with the resin material 908 and is housed in the case 906. Therefore, the size of the inverter including the smoothing capacitor 900 increases according to the thickness of the resin material 908 and the size of the case 906. However, the resin material 908 and the case 906 do not have an electrical function of securing the electrostatic capacitance and the like of the smoothing capacitor 900. Therefore, in the case of adopting the configuration of the comparison object, the inverter becomes large due to the resin material 908 and the case 906 which do not have the electric function. In addition, in the case of adopting the configuration of the comparison object, the weight and cost of the inverter increase due to the resin material 908 and the case 906 which do not have the electrical function.
In the inverter, it is desirable to reduce the parasitic inductance of the bus bar electrode in order to reduce the surge voltage generated when the switching element performs switching. Therefore, it is desirable to adopt a configuration in which the bus bar electrodes on the high potential side and the low potential side are stacked in a state of being close to each other, and the directions of currents flowing through the bus bar electrodes on the high potential side and the low potential side are reversed from each other. With this configuration, magnetic fluxes generated by currents flowing in the bus bar electrodes on the high potential side and the low potential side cancel each other out. Therefore, the parasitic inductance of the bus bar electrode becomes small.
However, in the structure to be compared, the first bus bar electrode 902 extends from the first capacitor electrode 940 to one external connection terminal 960 along the shortest path connecting the first capacitor electrode 940 and one external connection terminal 960 disposed on the side close to the semiconductor power module. The second bus bar electrode 904 extends from the second capacitor electrode 942 to the other external connection terminal 962 along a path connecting the second capacitor electrode 942 disposed on the side away from the semiconductor power module and passing through the vicinity of the resin material 908 covering the side surface of the smoothing capacitor 900. Therefore, the first bus bar electrode 902 and the second bus bar electrode 904 can be laminated on the route from the external connection terminal 910 to the semiconductor power module, but the first bus bar electrode 902 and the second bus bar electrode 904 cannot be laminated inside the case 906. When the first bus bar electrode 902 and the second bus bar electrode 904 cannot be stacked inside the case 906, a portion where magnetic fluxes generated by currents flowing through the first bus bar electrode 902 and the second bus bar electrode 904 cannot cancel each other is generated long on the side surface of the smoothing capacitor 900. Therefore, since the parasitic inductance of the first bus bar electrode 902 and the second bus bar electrode 904 cannot be reduced, deterioration of the electrical characteristics of the inverter such as surge voltage cannot be reduced.
When the inverter operates, a current flows through the smoothing capacitor 900, and the smoothing capacitor 900 generates heat therein. Therefore, it is desirable to cool the smoothing capacitor 900. However, heat dissipation from the side surface of the smoothing capacitor 900 is not effective. In particular, when the smoothing capacitor 900 is a film capacitor, it is not effective to radiate heat from the side surface of the smoothing capacitor 900. The reason why heat dissipation from the side surface of the smoothing capacitor 900 is not effective when the smoothing capacitor 900 is a thin film capacitor is that the thin film capacitor includes an insulating film and a metal film, and has a shape in which a laminate obtained by depositing the metal film on the surface of the insulating film is multiply laminated. The reason why heat dissipation from the side surface of the thin film capacitor having this shape is not effective is that only insulating films having low thermal conductivity are multiply laminated in the thin film capacitor. That is, the thermal resistance increases in the direction from the inside of the thin film capacitor, which must pass through the plurality of insulating films, toward the side surfaces of the thin film capacitor. Therefore, heat is expected to be dissipated from the first capacitor electrode 940 and the second capacitor electrode 942 of the smoothing capacitor 900. However, in the structure to be compared, since the resin material 908 and the case 906 are disposed outside the first capacitor electrode 940 and the second capacitor electrode 942 of the smoothing capacitor 900, it is difficult to radiate heat from the first capacitor electrode 940 and the second capacitor electrode 942 of the smoothing capacitor 900. Therefore, the internal heat of the smoothing capacitor 900 cannot be efficiently dissipated. A measure may be taken in which the first bus bar electrode 902 and the second bus bar electrode 904 are thickened, and heat is transferred to the first bus bar electrode 902 and the second bus bar electrode 904, thereby dissipating heat to the atmosphere via the first bus bar electrode 902 and the second bus bar electrode 904. However, the heat dissipation performance achieved by this measure is not sufficient. Further, in the case of performing this countermeasure, the cost of the first bus bar electrode 902 and the second bus bar electrode 904 increases.
1.3.4 advantages of the configuration in which the smoothing capacitor is housed in the second bus bar electrode
In the case of adopting a structure in which the smoothing capacitor 1020 is housed in the second bus bar electrode 1023, the smoothing capacitor 1020 provided in the inverter 1000 is housed in the second bus bar electrode 1023 for electrical connection. Also, the smoothing capacitor 1020 is held by the second bus bar electrode 1023. Therefore, the number of components used only for housing the smoothing capacitor 1020 can be reduced. Therefore, the inverter 1000 can be made smaller, lighter, and lower in cost.
The second bus bar electrode 1023 is made of metal. Therefore, since the second bus bar electrode 1023 including the cylindrical side wall portion 1120 can be easily manufactured by press working by using a metal plate, the second bus bar electrode 1023 can be manufactured by press working. Further, it is also easy to electrically connect the second bus bar electrode 1023 with the first electrode 1081.
In the case of the configuration in which the smoothing capacitor 1020 is housed in the second bus bar electrode 1023, the current that enters the first electrode 1081 from the first bus bar electrode 1022 flows inside the smoothing capacitor 1020 and reaches the second electrode 1082. The current reaching the second electrode 1082 flows out from the second electrode 1082 to the second bus bar electrode 1023. Therefore, the direction of the current flowing through the smoothing capacitor 1020 is opposite to the direction of the current flowing through the side wall portion 1120. As described above, the side wall portion 1120 is disposed along the side surface 1062 of the smoothing capacitor 1020. Therefore, when a current flows in the smoothing capacitor 1020, a state is achieved in which the smoothing capacitor 1020 and the side wall portion 1120, in which currents flow in opposite directions to each other, are in contact with each other and stacked over a wide area range.
In the configuration of the comparative subject, although currents flow in opposite directions to each other, two portions that are difficult to be laminated exist inside the case 906, and thus it is difficult to reduce the parasitic inductance of the bus bar electrode. In contrast, in the configuration in which the smoothing capacitor 1020 is housed in the second bus bar electrode 1023, as described above, the smoothing capacitor 1020 and the side wall portion 1120 in which currents flow in opposite directions to each other are in contact with each other and stacked in a wide area range, and therefore parasitic inductance of the first bus bar electrode 1022 and the second bus bar electrode 1023 can be reduced. Further, the parasitic inductance of the smoothing capacitor 1020 itself can be reduced.
If the parasitic inductance can be reduced, the surge voltage is reduced. In the case where the surge voltage is reduced, the switching speed of the semiconductor element becomes fast. When the switching speed of the semiconductor element is increased, the switching loss of the semiconductor element is also reduced.
1.4 splitter plates
The first electrodes 1081 provided in the plurality of capacitors 1040 are electrically connected to the first bus bar electrodes 1022. The second electrodes 1082 provided in the plurality of capacitors 1040 are electrically connected to the second bus bar electrodes 1023. The plurality of capacitors 1040 are electrically connected in parallel by the first electrode 1081 and the second electrode 1082 being electrically connected to the first bus bar electrode 1022 and the second bus bar electrode 1023, respectively. By connecting the plurality of capacitors 1040 electrically in parallel, the electrostatic capacitance required for the smoothing capacitor 1020 is ensured.
Second bus bar electrode 1023 further includes a partition plate 1160.
The partition plate 1160 is an electrode plate having a partition shape. The partition plate 1160 is disposed in the receiving space 1140, and divides the receiving space 1140 into a plurality of blocks 1170. A plurality of capacitors 1040 are respectively housed in the plurality of blocks 1170.
The capacitors 1040 are housed in each block 1170, and a partition plate 1160 that constitutes the second bus bar electrode 1023 is present between two adjacent capacitors 1040. The divider plate 1160 further increases the effect of reducing the parasitic inductance described above.
Since the second bus bar electrode 1023 is made of metal, the second bus bar electrode 1023 including the partition plate 1160 is easily manufactured, the partition plate 1160 divides the housing space 1140 into the plurality of blocks 1170, and the sizes of the plurality of blocks 1170 are respectively adapted to the sizes of the plurality of capacitors 1040.
1.5 fastening to the housing or the cooler
Hereinafter, an example in which the second bus bar electrode 1023 is fixed to the housing will be described, and then an example in which the first bus bar electrode 1022 and the second bus bar electrode 1023 are fixed to the cooler will be described.
Fig. 7 is a cross-sectional view schematically illustrating the second bus bar electrode, the case, and the electrical insulating material provided in the inverter according to the first embodiment.
In the example illustrated in fig. 7, the inverter 1000 further includes a housing 1180 and an electrical insulating material 1181 illustrated in fig. 7.
The housing 1180 houses the smoothing capacitor 1020 and the semiconductor power module 1021.
Second bus bar electrode 1023 is fixed to case 1180 via electrically insulating material 1181. Second bus bar electrode 1023 is fixed to case 1180 with electrical insulating material 1181 interposed therebetween, and second bus bar electrode 1023 does not directly contact case 1180. Therefore, the second bus bar electrode 1023 is electrically insulated from the housing 1180.
The smoothing capacitor 1020 is reliably held by the second bus bar electrode 1023 by being accommodated in the second bus bar electrode 1023. Therefore, by the second bus bar electrode 1023 being fixed to the housing 1180, the smoothing capacitor 1020 is reliably fixed to the housing 1180 via the second bus bar electrode 1023.
Fig. 8 is a cross-sectional view schematically illustrating the first bus bar electrode, the second bus bar electrode, the cooler, and the electrical insulating material provided in the inverter according to the first embodiment.
In the example illustrated in fig. 8, the inverter 1000 further includes a cooler 1201 illustrated in fig. 8 and an electrically insulating material 1202.
The cooler 1201 is included in the housing 1180 or fixed to the housing 1180.
First bus bar electrode 1022 and second bus bar electrode 1023 are fixed to cooler 1201 via electrically insulating material 1202.
First bus bar electrode 1022 and second bus bar electrode 1023 are fixed to cooler 1201 via electrically insulating material 1202, and first bus bar electrode 1022 and second bus bar electrode 1023 do not directly contact cooler 1201. Therefore, the first bus bar electrode 1022 and the second bus bar electrode 1023 are electrically insulated from the cooler 1201.
First bus bar electrode 1022 and second bus bar electrode 1023 are adhered to electrically insulating material 1202 or joined to electrically insulating material 1202. The electrically insulating material 1202 is bonded to the cooler 1201 or bonded to the cooler 1201. The first bus bar electrode 1022 is fixed to the cooler 1201 via the electrically insulating material 1202, and the first electrode 1081 in contact with the first bus bar electrode 1022 is thermally bonded to the cooler 1201. Second bus bar electrode 1023 is fixed to cooler 1201 via electrically insulating material 1202, and second electrode 1082 in contact with second bus bar electrode 1023 is thermally bonded to cooler 1201. The first electrode 1081 and the second electrode 1082, to which heat is transferred by heat generated inside the smoothing capacitor 1020, are directly cooled by the first electrode 1081 and the second electrode 1082 being thermally coupled to the cooler 1201. Therefore, an increase in the temperature of the smoothing capacitor 1020 is suppressed.
The smoothing capacitor 1020 is housed in the second bus bar electrode 1023, and is thereby reliably held by the second bus bar electrode 1023. Therefore, the first electrode 1081 and the second electrode 1082 can be easily attached to the cooler 1201 via the electrically insulating material 1202. Therefore, the first electrode 1081 and the second electrode 1082 are effectively cooled.
In an inverter, a smoothing capacitor may be increased in size in order to not only secure a required capacitance but also suppress a temperature rise associated with heat generation. That is, the capacitor may have a capacitance larger than that required for the smoothing capacitor. However, in the case where the smoothing capacitor 1020 is cooled efficiently, it is not necessary to have a capacitance larger than that required for the smoothing capacitor 1020. Therefore, the smoothing capacitor 1020 can be downsized. When the smoothing capacitor 1020 can be downsized, the inverter 1000 can be downsized and reduced in cost.
1.6 capacitor having rectangular parallelepiped shape
Fig. 9 is a perspective view schematically illustrating a smoothing capacitor provided in an inverter according to a modification of the first embodiment. Fig. 10 is a perspective view schematically illustrating a second bus bar electrode provided in an inverter according to a modification of the first embodiment. Fig. 11 is a perspective view schematically illustrating first bus bar electrodes, second bus bar electrodes, and a smoothing capacitor provided in an inverter according to a modification of the first embodiment.
The smoothing capacitor 1320, the first bus bar electrode 1321, and the second bus bar electrode 1322 illustrated in fig. 9, 10, and 11 can be used instead of the smoothing capacitor 1020, the first bus bar electrode 1022, and the second bus bar electrode 1023 illustrated in fig. 2 to 6.
The smoothing capacitor 1320 includes a capacitor 1340. The capacitor 1340 has a rectangular parallelepiped shape. The smoothing capacitor 1320 includes a capacitor body 1360, a first electrode 1361, and a second electrode 1362. The first electrode 1361 is a metallization electrode and is disposed at one end 1380 of the smoothing capacitor 1320. The second electrode 1362 is a metallization electrode and is disposed at the other end 1381 of the smoothing capacitor 1320.
The first bus bar electrode 1321 and the second bus bar electrode 1322 are different from the first bus bar electrode 1022 and the second bus bar electrode 1023, respectively, in the following respects: instead of the smoothing capacitor 1020 including the plurality of capacitors 1040 each having a cylindrical shape, the smoothing capacitor 1320 includes one capacitor 1340 having a rectangular parallelepiped shape, and has a shape suitable for the smoothing capacitor 1320. The second bus bar electrode 1322 is different from the second bus bar electrode 1023 in that it does not include a separator. Other than these differences, the first bus bar electrode 1321 and the second bus bar electrode 1322 have the same features as the first bus bar electrode 1022 and the second bus bar electrode 1023, respectively.
One end 1380 of the smoothing capacitor 1320 protrudes from the second bus bar electrode 1322. Accordingly, a gap 1400 exists between the first bus bar electrode 1321 connected to the first electrode 1361 and the second bus bar electrode 1322 connected to the second electrode 1362. The first bus bar electrode 1321 and the second bus bar electrode 1322 are prevented from being short-circuited by the gap 1400.
Fig. 12 is a perspective view schematically illustrating first bus bar electrodes, second bus bar electrodes, and a smoothing capacitor provided in an inverter according to a modification of the first embodiment. Fig. 13 is a cross-sectional view schematically illustrating the second bus bar electrodes and the smoothing capacitor provided in the inverter according to the modification of the first embodiment. Figure 13 illustrates a cross-section at the location of cutting line a-a of figure 12.
The smoothing capacitor 1420, the first bus bar electrode 1421, and the second bus bar electrode 1422 illustrated in fig. 12 and 13 can be used instead of the smoothing capacitor 1020, the first bus bar electrode 1022, and the second bus bar electrode 1023 illustrated in fig. 2 to 6.
The smoothing capacitor 1420 includes a plurality of capacitors 1440. A plurality of capacitors 1440 are electrically connected in parallel. Each of the capacitors 1440 has a rectangular parallelepiped shape.
The first bus bar electrode 1421 and the second bus bar electrode 1422 have the same features as the first bus bar electrode 1022 and the second bus bar electrode 1023, respectively, except that the smoothing capacitor 1420 including the rectangular parallelepiped capacitor 1440 is housed instead of the smoothing capacitor 1020 including the cylindrical capacitor 1040. The first bus bar electrode 1421 and the second bus bar electrode 1422 are different from the first bus bar electrode 1022 and the second bus bar electrode 1023, respectively, in the following respects: instead of the smoothing capacitor 1020 including the plurality of capacitors 1040 each having a cylindrical shape, the smoothing capacitor 1420 includes a plurality of capacitors 1440 each having a rectangular parallelepiped shape, and the smoothing capacitor 1420 includes a plurality of capacitors 1420. Other than these differences, the first bus bar electrode 1421 and the second bus bar electrode 1422 have the same features as the first bus bar electrode 1022 and the second bus bar electrode 1023, respectively.
The present invention is not limited to the above embodiments, and various modifications can be made.
Description of the reference symbols
1000: an inverter; 1020: a smoothing capacitor; 1021: a semiconductor power module; 1022: a first bus bar electrode; 1023: a second bus bar electrode; 1040: a capacitor; 1081: a first electrode; 1082: a second electrode; 1120: a sidewall portion; 1121: a bottom; 1140: a storage space; 1141: a bottom side end; 1160: a partition plate; 1170: a block; 1180: a housing; 1181: an electrically insulating material; 1200: a housing; 1201: a cooler; 1202: an electrically insulating material; 1320: a smoothing capacitor; 1321: a first bus bar electrode; 1322: a second bus bar electrode; 1340: a capacitor; 1361: a first electrode; 1362: a second electrode; 1420: a smoothing capacitor; 1421: a first bus bar electrode; 1422: a second bus bar electrode.
Claims (5)
1. An inverter, comprising:
a smoothing capacitor that smoothes a direct current, the smoothing capacitor including a capacitor having one end, another end, and a side surface extending from the one end to the another end, a first electrode disposed at the one end, and a second electrode disposed at the another end;
a semiconductor power module that generates an alternating current by switching a direct current, the semiconductor power module being separated from the first electrode by a first distance and separated from the second electrode by a second distance, the semiconductor power module being disposed at a position where the second distance is longer than the first distance;
a first bus bar electrode electrically connecting the first electrode with the semiconductor power module; and
and a second bus bar electrode electrically connecting the second electrode and the semiconductor power module, the second bus bar electrode including a side wall portion having a housing space and a bottom end, the side wall portion being along the side surface, and a bottom portion disposed at the bottom end and contacting the second electrode, the smoothing capacitor being housed in the housing space.
2. The inverter according to claim 1,
the smoothing capacitor is provided with a plurality of the capacitors electrically connected in parallel,
the second bus bar electrode further includes a partition plate that partitions the housing space into a plurality of blocks that house the plurality of capacitors, respectively.
3. The inverter according to claim 1 or 2,
the inverter further includes:
a case that houses the smoothing capacitor and the semiconductor power module; and
an electrically insulating material, which is preferably a metal,
the second bus bar electrode is fixed to the case with the electrical insulating material interposed therebetween.
4. The inverter according to claim 3,
the housing is provided with a cooler which is provided with a cooler,
the first bus bar electrode and the second bus bar electrode are fixed to the cooler with the electrical insulating material interposed therebetween.
5. The inverter according to claim 1 or 2,
the inverter further includes:
a case that houses the smoothing capacitor and the semiconductor power module;
a cooler fixed to the housing; and
an electrically insulating material, which is preferably a metal,
the first bus bar electrode and the second bus bar electrode are fixed to the cooler with the electrical insulating material interposed therebetween.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-029517 | 2018-02-22 | ||
| JP2018029517 | 2018-02-22 | ||
| PCT/JP2019/004964 WO2019163592A1 (en) | 2018-02-22 | 2019-02-13 | Inverter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111742480A true CN111742480A (en) | 2020-10-02 |
Family
ID=67688362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980014089.8A Withdrawn CN111742480A (en) | 2018-02-22 | 2019-02-13 | Inverter with a voltage regulator |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN111742480A (en) |
| WO (1) | WO2019163592A1 (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005012940A (en) * | 2003-06-19 | 2005-01-13 | Toshiba Corp | Inverter device |
| WO2013164933A1 (en) * | 2012-05-01 | 2013-11-07 | 日立オートモティブシステムズ株式会社 | Inverter device |
| CN103563234A (en) * | 2011-05-31 | 2014-02-05 | 日立汽车系统株式会社 | Power conversion apparatus |
| JP2015167428A (en) * | 2014-03-03 | 2015-09-24 | 株式会社日本自動車部品総合研究所 | Power conversion device |
| CN105656323A (en) * | 2014-11-28 | 2016-06-08 | 株式会社日立制作所 | Power conversion device and railway vehicle including the same |
| CN106130362A (en) * | 2015-05-07 | 2016-11-16 | 株式会社日立制作所 | Power-converting device and rail truck |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007214273A (en) * | 2006-02-08 | 2007-08-23 | Nissan Motor Co Ltd | Power converter and capacitor element |
| JP5818754B2 (en) * | 2012-08-14 | 2015-11-18 | 日立オートモティブシステムズ株式会社 | DC-DC converter device |
-
2019
- 2019-02-13 CN CN201980014089.8A patent/CN111742480A/en not_active Withdrawn
- 2019-02-13 WO PCT/JP2019/004964 patent/WO2019163592A1/en active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005012940A (en) * | 2003-06-19 | 2005-01-13 | Toshiba Corp | Inverter device |
| CN103563234A (en) * | 2011-05-31 | 2014-02-05 | 日立汽车系统株式会社 | Power conversion apparatus |
| WO2013164933A1 (en) * | 2012-05-01 | 2013-11-07 | 日立オートモティブシステムズ株式会社 | Inverter device |
| JP2015167428A (en) * | 2014-03-03 | 2015-09-24 | 株式会社日本自動車部品総合研究所 | Power conversion device |
| CN105656323A (en) * | 2014-11-28 | 2016-06-08 | 株式会社日立制作所 | Power conversion device and railway vehicle including the same |
| CN106130362A (en) * | 2015-05-07 | 2016-11-16 | 株式会社日立制作所 | Power-converting device and rail truck |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019163592A1 (en) | 2019-08-29 |
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Application publication date: 20201002 |