CN111721206A - Plasmon-assisted optical measurement method for three-dimensional micro-nano structure of chip - Google Patents

Plasmon-assisted optical measurement method for three-dimensional micro-nano structure of chip Download PDF

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CN111721206A
CN111721206A CN202010698514.4A CN202010698514A CN111721206A CN 111721206 A CN111721206 A CN 111721206A CN 202010698514 A CN202010698514 A CN 202010698514A CN 111721206 A CN111721206 A CN 111721206A
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grating
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CN111721206B (en
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余安琪
杨振宇
郭旭光
朱亦鸣
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University of Shanghai for Science and Technology
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
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Abstract

The invention belongs to the field of optical measurement, and provides a plasmon-assisted optical measurement method for a three-dimensional micro-nano structure of a chip, which is used for measuring structural parameters of three layers of crossed periodic metal gratings and comprises the following steps: step 1, normally incidence of incident light from a first layer of grating of three layers of crossed periodic metal gratings and then measurement are carried out to obtain an actually measured reflection spectrum; step 2, performing electromagnetic simulation on the three layers of crossed periodic metal gratings to construct a simulation structure, adjusting structure parameters in the simulation structure for multiple times under the same incident light, and correspondingly obtaining multiple groups of simulated reflection spectrums; and 3, comparing the plurality of groups of simulated reflection spectrums with the actually measured reflection spectrum, calculating the variance through a regression algorithm, and when the variance of a certain group of simulated reflection spectrums and the actually measured reflection spectrum is minimum, the structural parameters of the simulated structure corresponding to the group of simulated reflection spectrums are the structural parameters of the three-layer crossed periodic metal grating.

Description

Plasmon-assisted optical measurement method for three-dimensional micro-nano structure of chip
Technical Field
The invention belongs to the field of optical measurement, and particularly relates to a plasmon-assisted optical measurement method for a chip three-dimensional micro-nano structure.
Background
With the development of semiconductor manufacturing technology and the miniaturization of chip size, the optical metrology of chip structures is becoming more and more important. The optical metering method can obtain the three-dimensional structure information of the chip in the chip processing process in real time and without damage.
In most products, more than 50% of the processing steps involve measurement or characterization. Optical metrology based on reflectance spectra is a non-imaging optical technique that has been widely used in semiconductor processing. As device structure dimensions change, such as width and thickness, the reflectance spectrum also changes. A numerical calculation method based on strict coupled wave analysis can be used for simulating a geometric structure and calculating a reflection spectrum. The minimum variance is calculated by comparing the experimental spectrum with the simulation spectrum and a regression algorithm, and the simulation structure with the highest matching degree with the actual structure is reversely deduced, so that the high-precision measurement of the three-dimensional structure of the chip is realized.
However, for increasingly complex semiconductor chip structures, the parameter sensitivity affects the accuracy and the difficulty of parameter measurement, and in the prior art, the measurement of the structure parameter is not performed by using the plasmon reflection valley, but is performed by using a general reflection spectrum, and the parameter sensitivity is not high.
Disclosure of Invention
The present invention has been made to solve the above problems, and an object of the present invention is to provide a plasmon-assisted optical measurement method for a three-dimensional micro-nano structure of a chip, which can accurately and nondestructively obtain structural parameters.
The invention provides a plasmon-assisted optical measurement method for a three-dimensional micro-nano structure of a chip, which is used for measuring the structural parameters of three-layer crossed periodic metal gratings and has the characteristics that the method comprises the following steps:
step 1, normally incidence of incident light from a first layer of grating of three layers of crossed periodic metal gratings and then measurement are carried out to obtain an actually measured reflection spectrum;
step 2, performing electromagnetic simulation on the three layers of crossed periodic metal gratings to construct a simulation structure, adjusting structure parameters in the simulation structure for multiple times under the same incident light, and correspondingly obtaining multiple groups of simulated reflection spectrums;
step 3, comparing a plurality of groups of simulated reflection spectrums with the actually measured reflection spectrum, calculating the variance through a regression algorithm, when the variance of a certain group of simulated reflection spectrums and the actually measured reflection spectrum is minimum, the structural parameters of the simulated structure corresponding to the group of simulated reflection spectrums are the structural parameters of the three-layer crossed periodic metal grating,
in the simulation structure, a silicon-based substrate, a silicon dioxide insulating layer, a third layer of grating, a silicon dioxide insulating layer, a second layer of grating, a silicon dioxide insulating layer and a first layer of grating are arranged from bottom to top respectively, incident light evanescence passes through the first layer of grating and then excites first-order bonding local plasmons and first-order anti-bonding local plasmons in the second layer of grating, so that reflection valleys appear in an actually measured reflection spectrum and a simulated reflection spectrum, and the positions, depths and widths of the reflection valleys are related to structural parameters of the three-layer cross periodic metal grating.
The plasmon-assisted optical measurement method for the three-dimensional micro-nano structure of the chip provided by the invention can also have the following characteristics: the electric field direction of the incident light is parallel to the extending direction of the first layer of grating and is vertical to the arrangement direction of the first layer of grating, and the wave band of the incident light is 400nm-2000 nm.
The plasmon-assisted optical measurement method for the three-dimensional micro-nano structure of the chip provided by the invention can also have the following characteristics: the first layer of grating and the third layer of grating extend in parallel, the second layer of grating is located between the first layer of grating and the third layer of grating, the extending direction of the second layer of grating is perpendicular to the extending direction of the first layer of grating and the third layer of grating, and the first layer of grating, the second layer of grating and the third layer of grating are arranged periodically.
The plasmon-assisted optical measurement method for the three-dimensional micro-nano structure of the chip provided by the invention can also have the following characteristics: the geometrical parameters and dielectric constants of the first layer of grating, the second layer of grating and the third layer of grating are consistent, and the widths and thicknesses of the first layer of grating, the second layer of grating and the third layer of grating are smaller than 100 nm.
The plasmon-assisted optical measurement method for the three-dimensional micro-nano structure of the chip provided by the invention can also have the following characteristics: in step 2, the electromagnetic simulation method is a strict coupled wave analysis method, a finite element method or a time domain finite difference method.
The plasmon-assisted optical measurement method for the three-dimensional micro-nano structure of the chip provided by the invention can also have the following characteristics: in step 2, when the simulation structure is constructed, the dielectric functions or refractive indexes of the silicon-based substrate, the silicon dioxide insulating layer, the first layer of grating, the second layer of grating and the third layer of grating are all known parameters.
Action and Effect of the invention
According to the optical measurement method of the plasmon-assisted chip three-dimensional micro-nano structure, because the reflection spectrum method is combined with the electromagnetic simulation to construct the simulation structure and adjust the structure parameters in the simulation structure according to the reflection valley in the actually measured reflection spectrum, the reflection valley in the simulation reflection spectrum is matched with the reflection valley in the actually measured reflection spectrum, the structural parameters are adjusted according to the reflection valleys formed under the assistance of the first-order bonding local plasmons and the first-order reverse bonding local plasmons of the second layer of grating, so that the sensitivity of the reflection spectrum to the structural parameters of the device can be greatly improved, can accurately and nondestructively obtain the internal structure information of the three-layer crossed periodic metal grating, replace destructive parameter measurement of the device structure, therefore, the structural parameter measurement of the three-layer crossed periodic metal grating with high sensitivity and high precision is realized.
Drawings
Fig. 1 is a flowchart of a plasmon-assisted optical measurement method for a three-dimensional micro-nano structure of a chip in an embodiment of the present invention;
FIG. 2 is a schematic diagram of a simulation architecture in an embodiment of the invention;
FIG. 3 is a reflectance spectrum of a first layer grating width in an embodiment of the present invention;
FIG. 4 is a reflectance spectrum of a second layer grating width in an embodiment of the present invention;
FIG. 5 is a reflectance spectrum of the width of a grating of a third layer in an embodiment of the present invention;
FIG. 6 is a reflectance spectrum of a first layer grating thickness in an embodiment of the present invention;
FIG. 7 is a reflectance spectrum of a second layer grating thickness in an embodiment of the present invention;
FIG. 8 is a reflectance spectrum of the thickness of a third layer grating in an embodiment of the present invention;
FIG. 9 is an enlarged view of the reflectance spectrum in the dashed box of FIG. 8;
FIG. 10 is a reflectance spectrum of a second layer grating location in an embodiment of the present invention;
FIG. 11 is a reflectivity spectrum of an embodiment of the present invention in which the first grating layer is spaced from the third grating layer by less than 240 nm;
FIG. 12 is a reflectivity spectrum of an embodiment of the present invention when the first layer grating is spaced apart from the third layer grating by a distance greater than 240 nm.
Detailed Description
In order to make the technical means and functions of the present invention easy to understand, the present invention is specifically described below with reference to the embodiments and the accompanying drawings.
Fig. 1 is a flowchart of a plasmon-assisted optical measurement method for a three-dimensional micro-nano structure of a chip in an embodiment of the present invention.
As shown in fig. 1, the optical measurement method for a plasmon-assisted chip three-dimensional micro-nano structure according to the embodiment is used for measuring structural parameters of a three-layer crossed periodic metal grating, and includes the following steps:
step 1, measuring incident light after the incident light is normally incident from a first layer of grating of three layers of crossed periodic metal gratings to obtain an actually measured reflection spectrum.
The electric field direction of the incident light is parallel to the extending direction of the first layer of grating and is vertical to the arrangement direction of the first layer of grating, and the wave band of the incident light is 400nm-2000 nm.
And 2, performing electromagnetic simulation on the three layers of crossed periodic metal gratings, constructing a simulation structure, adjusting structure parameters in the simulation structure for multiple times under the same incident light, and correspondingly obtaining multiple groups of simulated reflection spectrums.
In step 2, the method for performing electromagnetic simulation is a strict coupled wave analysis method, a finite element method or a time domain finite difference method.
FIG. 2 is a schematic diagram of a simulation structure in an embodiment of the invention.
As shown in fig. 2, in the simulation structure, from bottom to top, there are a silicon substrate 1, a silicon dioxide insulating layer 21, a third layer grating 3, a silicon dioxide insulating layer 22, a second layer grating 4, a silicon dioxide insulating layer 23, and a first layer grating 5.
The extending directions of the first layer of grating 5 and the third layer of grating 3 are parallel, the second layer of grating 4 is positioned between the first layer of grating 5 and the third layer of grating 3, the extending direction of the second layer of grating 4 is vertical to the extending directions of the first layer of grating 5 and the third layer of grating 3, and the first layer of grating 5, the second layer of grating 4 and the third layer of grating 3 are all arranged periodically.
In step 2, when the simulation structure is constructed, the dielectric functions or refractive indexes of the silicon substrate 1, the silicon dioxide insulating layers 21, 22 and 23, the first layer of grating 5, the second layer of grating 4 and the third layer of grating 3 are all known parameters.
The geometric parameters and dielectric constants of the first layer of grating 5, the second layer of grating 4 and the third layer of grating 3 are consistent, and the widths and thicknesses of the first layer of grating 5, the second layer of grating 4 and the third layer of grating 3 are all smaller than 100 nm.
In step 2, the structural parameters in the simulation structure are adjusted for multiple times according to the position, the depth and the width of the reflection valley in the actually measured reflection spectrum, so that the reflection valley in the simulation reflection spectrum is consistent with the reflection valley in the actually measured reflection spectrum.
And 3, comparing the plurality of groups of simulated reflection spectrums with the actually measured reflection spectrum, calculating the variance through a regression algorithm, and when the variance of a certain group of simulated reflection spectrums and the actually measured reflection spectrum is minimum, the structural parameters of the simulated structure corresponding to the group of simulated reflection spectrums are the structural parameters of the three-layer crossed periodic metal grating.
Incident light evanescence passes through the first layer of grating 5 and then excites first-order bonding local plasmons and first-order anti-bonding local plasmons in the second layer of grating 4, so that reflection valleys appear in an actually measured reflection spectrum and a simulated reflection spectrum, and the positions, depths and widths of the reflection valleys are related to structural parameters of the three-layer crossed periodic metal grating.
In this embodiment, the structural parameters of the three-layer crossed periodic metal grating include the width and thickness of the three-layer grating, the position of the second-layer grating 4, the relative distance between the first-layer grating 5 and the third-layer grating 3, and other parameters, and the experimental process of the influence of the structural parameters of the three-layer crossed periodic metal grating on the reflection valley in the reflection spectrum includes the following steps:
setting CD1，CD2And CD3Is the width of the first, second and third layers of grating (from top to bottom), h1，h2And h3Is the thickness of the first, second and third layers of grating, s12Representing the spacing, s, between the first and second layers of the grating23Indicating the spacing between the second and third layers of gratings. PxAnd PyEach representing the period of the unit cell in the x and y directions. The initial value of the above parameter is set as CD1＝CD2＝CD3＝30n，h1＝h2＝h3＝60nm，s12＝s2360nm and Px＝Py＝60nm。
Fig. 3 is a reflectivity spectrum of a grating width of a first layer in an embodiment of the present invention, fig. 4 is a reflectivity spectrum of a grating width of a second layer in an embodiment of the present invention, and fig. 5 is a reflectivity spectrum of a grating width of a third layer in an embodiment of the present invention.
When the CD is in use, as shown in FIG. 31When 60nm, the coupling efficiency is extremely low (under-coupling)The plasmon excitation efficiency is also extremely low. When CD1Gradually decreasing from 60nm to 15nm, the coupling efficiency increases, transitioning from under-coupling to optimal coupling, and the width and depth of the reflective valleys increase. When CD1At 15nm, the best coupling is achieved and the depth of the reflection valley is maximized. When CD1<15nm, a further increase in coupling efficiency leads to over-coupling, and thus the width of the reflective valleys increases and the depth decreases instead. Similarly, as shown in fig. 4 and 5, the widths of the second layer grating 4 and the third layer grating 3 also affect the reflection valley, so the width of the three layer grating can be determined by the depth, position and width of the reflection valley caused by the first-order bonded local plasmon in the second layer grating 4.
Fig. 6 is a reflectance spectrum of a first layer grating thickness in an embodiment of the present invention, fig. 7 is a reflectance spectrum of a second layer grating thickness in an embodiment of the present invention, fig. 8 is a reflectance spectrum of a third layer grating thickness in an embodiment of the present invention, and fig. 9 is an enlarged view of a reflectance spectrum in a dashed frame of fig. 8.
When h is shown in FIG. 61At 120nm, the coupling efficiency is very low (under-coupling). With h1The coupling efficiency is enhanced, and thus the width of the reflection valley is always increased. When h is generated1>At 28nm, the coupling is always under-coupled, h1The reduction results in the depth of the reflective valleys becoming deeper all the time; when h is generated1The best coupling is achieved at 28nm, the depth of the reflection valley is deepest; when h is generated1<At 28nm, there is over-coupling and therefore the depth of the reflective valleys is reduced. Similarly, as shown in fig. 7, 8 and 9, the thicknesses of the second layer grating 4 and the third layer grating 3 also affect the reflection valley, so the thickness of the three layer grating can be determined by the depth, position and width of the reflection valley caused by the first-order bonded local plasmon in the second layer grating 4.
FIG. 10 is a reflectance spectrum of a grating location of the second layer in an embodiment of the present invention.
Assuming that the sum of the distances between the second layer grating 4 and the first and third layers of gratings 5 and 3 is 120nm, i.e. s12+s23120nm, as shown in FIG. 10, converting s12Gradually increasing from 10nm to 110nm, figure 10 shows,with s12From the initial value (60nm), the reflection valley is blue-shifted. For any two sets of parameters, if s of one of the sets is12S equal to another group23I.e. the distance from the second layer grating 4 to its two other gratings is the same, the reflection valley wavelengths of these two sets of parameters are the same. If the second layer of grating 4 is closer to the first layer of grating 5, a stronger optical field can be sensed, so that the coupling efficiency can be improved, and at the moment, in an under-coupled state, the coupling efficiency can be enhanced when the second layer of grating 4 is continuously closer to the first layer of grating 5, so that the depth of a reflection valley is increased. On the contrary, if the second layer grating 4 is closer to the third layer grating 3, the optical field is weaker, the coupling efficiency is also weaker, and the depth of the reflection valley is smaller than that of the case where the second layer grating 4 is closer to the first layer grating 5 when the central wavelength is the same. The position of the second layer grating 4 can thus be determined by the depth, position and width of the reflection valleys due to the first-order bonded localized plasmons in the second layer grating 4.
As shown in fig. 3 to 10, the reflection valleys with a wavelength greater than 800nm are all caused by the first-order bonded local plasmons in the second-layer grating 4, so in this embodiment, for the simulation structure that only excites the first-order bonded local plasmons, the structure simulation can be performed under the condition that three or less structural parameters to be measured are unknown, including the measurement of the width and thickness of the three-layer grating and the position of the second-layer grating 4, and is not limited to the measurement of a single structural parameter.
In this embodiment, since the thickness of the metal grating is limited, the dispersion relation of the first-order bonding local plasmon can be described by the low energy branch of formula (1):
Figure BDA0002592148750000091
Figure BDA0002592148750000092
in the formula (1) and the formula (2),1,eff,2,eff,3,effequivalent dielectric functions above, inside and below the second layer grating 4, β2Is plasmonicWave vector. Under the condition that the dielectric functions or refractive indexes of the silicon substrate 1, the silicon dioxide insulating layers 21, 22 and 23, the first layer of grating 5, the second layer of grating 4 and the third layer of grating 3 are known, because the duty ratio and the thickness of each layer of grating are the same, the invention can quantitatively measure the structural parameters such as the duty ratio and the thickness of the three layers of gratings, the position of the second layer of grating 4, the relative distance between the first layer of grating 5 and the third layer of grating 3 and the like through strict coupled wave analysis or finite element electromagnetic simulation.
Fig. 11 is a reflectivity spectrum diagram when the distance between the first layer grating and the third layer grating is smaller than 240nm in the embodiment of the present invention, and fig. 12 is a reflectivity spectrum diagram when the distance between the first layer grating and the third layer grating is larger than 240nm in the embodiment of the present invention.
As shown in FIGS. 11 and 12, assume s12＝s23And their sum s12+s23From 60nm to 320nm, namely the second layer grating 4 is arranged in the middle of the first layer grating 5 and the third layer grating 3, and the first layer grating 5 and the third layer grating 3 are continuously pulled away. The reflection valley is continuously red-shifted at this time, and when s12+s23At least 240nm, a new reflection valley caused by the first-order reverse bonding local plasmon excited in the second layer grating 4 appears near 700nm, and the dispersion relation corresponds to the high energy branch of the formula (1). The distance between the first layer grating 5 and the third layer grating 3 can be determined by the depth, position and width of the reflection valley caused by the first-order bonded local plasmon and first-order anti-bonded local plasmon mode in the second layer grating 4.
In this embodiment, for the simulation structure that excites the first-order bonding mode local plasmon and the first-order reverse bonding mode local plasmon simultaneously, the structure simulation can be performed under the condition that four or less parameters of the structure to be measured are unknown, including the measurement to obtain the width and thickness of the three-layer grating, the position of the second-layer grating 4, and the distance between the first-layer grating 5 and the third-layer grating 3, and is not limited to the measurement of a single structural parameter.
In this embodiment, because the plasmons excited in the second layer of grating 4 are shielded by the first layer of grating 5 and the third layer of grating 3, when the refractive index of the surrounding environment changes, the wavelength of the reflection valley will remain unchanged, the influence of the surrounding environment can be reduced, and the measurement accuracy is improved, and the plasmons excited in the second layer of grating 4 are shielded by the first layer of grating 5 and the third layer of grating 3, when the refractive index of the substrate changes, the wavelength and the depth of the reflection valley remain unchanged, that is, the plasmons are insensitive to the refractive index of the substrate, which eliminates the interference possibly brought by the substrate, and further improves the measurement accuracy.
TABLE 1 table for comparing sensitivity of the method of the present invention with that of the general reflectance spectrometry
Figure BDA0002592148750000101
Figure BDA0002592148750000111
Table 1 is a sensitivity comparison table of the method of the present invention and a general reflection spectrum measurement method, and as shown in table 1, the influence of plasmon resonance on the reflection spectrum is utilized, and the sensitivity of the reflection spectrum to the structural parameters in the method of the present invention is generally improved by more than one order of magnitude, so that the sensitivity of the reflection spectrum to the structural parameters of the device can be greatly improved by adjusting the structural parameters according to the reflection valley caused by the plasmon.
Effects and effects of the embodiments
According to the optical measurement method of the plasmon-assisted chip three-dimensional micro-nano structure related by the embodiment, by combining the reflection spectrum method with the electromagnetic simulation, a simulation structure is constructed, and structural parameters in the simulation structure are adjusted according to the reflection valley in the actually measured reflection spectrum, so that the reflection valley in the simulation reflection spectrum is matched with the reflection valley in the actually measured reflection spectrum, the sensitivity of the reflection spectrum to the device structure parameters can be greatly improved by adjusting the structure parameters according to the reflection valleys formed under the assistance of the first-order bonding local plasmon and the first-order reverse bonding local plasmon of the second layer grating, can accurately and nondestructively obtain the internal structure information of the three-layer crossed periodic metal grating, replace destructive parameter measurement of the device structure, therefore, the structural parameter measurement of the three-layer crossed periodic metal grating with high sensitivity and high precision is realized.
Further, the method of the embodiment has low parameter correlation, and can perform structure simulation under the condition that at most four structural parameters to be measured are unknown under the condition that the dielectric functions or refractive indexes of the silicon substrate, the silicon dioxide insulating layer, the first layer of grating, the second layer of grating and the third layer of grating are known, without being limited to measuring a single structural parameter.

Claims (6)

1. A plasmon-assisted optical measurement method for a three-dimensional micro-nano structure of a chip is used for measuring structural parameters of three layers of crossed periodic metal gratings and is characterized by comprising the following steps:
step 1, normally incidence of incident light from a first layer of grating of three layers of crossed periodic metal gratings and then measurement are carried out to obtain an actually measured reflection spectrum;
step 2, performing electromagnetic simulation on the three-layer crossed periodic metal grating, constructing a simulation structure, adjusting structure parameters in the simulation structure for multiple times under the same incident light, and correspondingly obtaining multiple groups of simulation reflection spectrums;
step 3, comparing a plurality of groups of simulated reflection spectrums with the actually measured reflection spectrums, calculating variance through a regression algorithm, and when the variance between a certain group of simulated reflection spectrums and the actually measured reflection spectrums is minimum, the structural parameters of the simulated structure corresponding to the group of simulated reflection spectrums are the structural parameters of the three-layer crossed periodic metal grating,
wherein, in the simulation structure, a silicon-based substrate, a silicon dioxide insulating layer, a third layer of grating, a silicon dioxide insulating layer, a second layer of grating, a silicon dioxide insulating layer and a first layer of grating are respectively arranged from bottom to top,
after the incident light passes through the first layer of grating in an evanescent mode, exciting first-order bonding local plasmons and first-order anti-bonding local plasmons in the second layer of grating, enabling reflection valleys to appear in the measured reflection spectrum and the simulated reflection spectrum, wherein the positions, the depths and the widths of the reflection valleys are related to the structural parameters of the three-layer crossed periodic metal grating,
in the step 2, the structural parameters in the simulation structure are adjusted for multiple times according to the position, depth and width of the reflection valley in the actually measured reflection spectrum, so that the reflection valley in the simulation reflection spectrum is consistent with the reflection valley in the actually measured reflection spectrum.
2. The optical measurement method of the plasmon-assisted chip three-dimensional micro-nano structure according to claim 1, characterized in that:
wherein the electric field direction of the incident light is parallel to the extending direction of the first layer of grating and is vertical to the arrangement direction of the first layer of grating,
the wave band of the incident light is 400nm-2000 nm.
3. The optical measurement method of the plasmon-assisted chip three-dimensional micro-nano structure according to claim 1, characterized in that:
wherein the extending directions of the first layer of grating and the third layer of grating are parallel, the second layer of grating is positioned between the first layer of grating and the third layer of grating, and the extending direction of the second layer of grating is vertical to the extending directions of the first layer of grating and the third layer of grating,
the first layer of grating, the second layer of grating and the third layer of grating are arranged periodically.
4. The optical measurement method of the plasmon-assisted chip three-dimensional micro-nano structure according to claim 1, characterized in that:
wherein the geometric parameters and dielectric constants of the first layer of grating, the second layer of grating and the third layer of grating are consistent,
the width and the thickness of the first layer of grating, the second layer of grating and the third layer of grating are all smaller than 100 nm.
5. The optical measurement method of the plasmon-assisted chip three-dimensional micro-nano structure according to claim 1, characterized in that:
in the step 2, the electromagnetic simulation method is a strict coupled wave analysis method, a finite element method or a time domain finite difference method.
6. The optical measurement method of the plasmon-assisted chip three-dimensional micro-nano structure according to claim 1, characterized in that:
in step 2, when the simulation structure is constructed, the dielectric functions or refractive indexes of the silicon-based substrate, the silicon dioxide insulating layer, the first layer of grating, the second layer of grating and the third layer of grating are all known parameters.
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