CN111718120A - Li-Al-Si photosensitive glass and preparation method thereof - Google Patents
Li-Al-Si photosensitive glass and preparation method thereof Download PDFInfo
- Publication number
- CN111718120A CN111718120A CN202010654262.5A CN202010654262A CN111718120A CN 111718120 A CN111718120 A CN 111718120A CN 202010654262 A CN202010654262 A CN 202010654262A CN 111718120 A CN111718120 A CN 111718120A
- Authority
- CN
- China
- Prior art keywords
- glass
- parts
- raw materials
- temperature
- photosensitive glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000006089 photosensitive glass Substances 0.000 title claims abstract description 49
- 229910018125 Al-Si Inorganic materials 0.000 title claims abstract description 33
- 229910018520 Al—Si Inorganic materials 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000002994 raw material Substances 0.000 claims abstract description 34
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims abstract description 25
- 150000001342 alkaline earth metals Chemical class 0.000 claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 239000011521 glass Substances 0.000 claims description 121
- 238000000137 annealing Methods 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 24
- 239000007788 liquid Substances 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 17
- 238000001816 cooling Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 4
- 238000010791 quenching Methods 0.000 claims description 4
- 230000000171 quenching effect Effects 0.000 claims description 2
- 239000006060 molten glass Substances 0.000 claims 2
- 238000002156 mixing Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 9
- 238000011161 development Methods 0.000 abstract description 7
- 229910004298 SiO 2 Inorganic materials 0.000 abstract description 6
- 238000004806 packaging method and process Methods 0.000 abstract description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 230000006872 improvement Effects 0.000 abstract description 2
- 229910018068 Li 2 O Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 description 20
- 229910052760 oxygen Inorganic materials 0.000 description 20
- 239000013078 crystal Substances 0.000 description 16
- 238000002425 crystallisation Methods 0.000 description 12
- 230000008025 crystallization Effects 0.000 description 12
- 230000035882 stress Effects 0.000 description 12
- 238000012360 testing method Methods 0.000 description 9
- 150000001340 alkali metals Chemical class 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 239000000047 product Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 238000001237 Raman spectrum Methods 0.000 description 7
- 229910004283 SiO 4 Inorganic materials 0.000 description 7
- 229910052783 alkali metal Inorganic materials 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 6
- 230000003247 decreasing effect Effects 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 239000006090 Foturan Substances 0.000 description 5
- 206010034972 Photosensitivity reaction Diseases 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910001413 alkali metal ion Inorganic materials 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 230000036211 photosensitivity Effects 0.000 description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 150000001768 cations Chemical class 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- PAZHGORSDKKUPI-UHFFFAOYSA-N lithium metasilicate Chemical compound [Li+].[Li+].[O-][Si]([O-])=O PAZHGORSDKKUPI-UHFFFAOYSA-N 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 4
- 230000006911 nucleation Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 3
- 229910001420 alkaline earth metal ion Inorganic materials 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 229910052912 lithium silicate Inorganic materials 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- 229910002808 Si–O–Si Inorganic materials 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 239000000156 glass melt Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000003607 modifier Substances 0.000 description 2
- -1 oxygen ions Chemical class 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000012916 structural analysis Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 238000007507 annealing of glass Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000008395 clarifying agent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001938 differential scanning calorimetry curve Methods 0.000 description 1
- WVMPCBWWBLZKPD-UHFFFAOYSA-N dilithium oxido-[oxido(oxo)silyl]oxy-oxosilane Chemical compound [Li+].[Li+].[O-][Si](=O)O[Si]([O-])=O WVMPCBWWBLZKPD-UHFFFAOYSA-N 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007496 glass forming Methods 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000005300 metallic glass Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 239000002667 nucleating agent Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 229910052705 radium Inorganic materials 0.000 description 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000010956 selective crystallization Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 150000003378 silver Chemical group 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/095—Glass compositions containing silica with 40% to 90% silica, by weight containing rare earths
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B25/00—Annealing glass products
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B5/00—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
- C03B5/16—Special features of the melting process; Auxiliary means specially adapted for glass-melting furnaces
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
- C03C4/04—Compositions for glass with special properties for photosensitive glass
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Glass Compositions (AREA)
Abstract
本发明提供了一种Li‑Al‑Si光敏玻璃的制备方法,采用以下重量份数的原料制备:SiO2 75~80份;Li2O 8~12份;Al2O3 2~5份;Na2O 1~4份;K2O 3~6份;ZnO 1~2份;Sb2O3 0.05~0.2份;碱土金属0~2份;CeO2 0.02~0.15份;Ag2O 0.05~0.15份。本发明通过改进原料的配比,同时改良生产工艺,有效地提高光敏玻璃的介电性能和机械性能,与肖特公司的Foturan光敏玻璃相比,介电性能和机械性能均有提高,能够在高频环境下的应用。此外,由于机械性能的提升,能够适应集成电路封装体积小型化的发展潮流。同时有利于改善了国内的转接板材料依赖国外厂商的局面,降低国内三维集成封装的成本,更好地推动国内集成电路的发展。
The invention provides a preparation method of Li-Al-Si photosensitive glass, which is prepared by using the following raw materials in parts by weight: 75-80 parts of SiO 2 ; 8-12 parts of Li 2 O; and 2-5 parts of Al 2 O 3 ; 1-4 parts of Na 2 O; 3-6 parts of K 2 O; 1-2 parts of ZnO; 0.05-0.2 parts of Sb 2 O 3 ; 0-2 parts of alkaline earth metals; 0.02-0.15 parts of CeO 2 ; 0.15 servings. The invention effectively improves the dielectric properties and mechanical properties of the photosensitive glass by improving the ratio of raw materials and at the same time improving the production process. Applications in high frequency environments. In addition, due to the improvement of mechanical properties, it can adapt to the development trend of miniaturization of integrated circuit packages. At the same time, it is beneficial to improve the situation that domestic adapter board materials rely on foreign manufacturers, reduce the cost of domestic three-dimensional integrated packaging, and better promote the development of domestic integrated circuits.
Description
技术领域technical field
本发明涉及三维集成封装转接板领域,尤其是一种Li-Al-Si光敏玻璃及其制备方法。The present invention relates to the field of three-dimensional integrated packaging adapter plates, in particular to a Li-Al-Si photosensitive glass and a preparation method thereof.
背景技术Background technique
随着微电子技术的发展,集成电路所面临的隧道贯穿等量子效应也日渐突出,摩尔定律也遇到了前所未有的瓶颈,而这些瓶颈有望通过先进的三维集成封装技术得到突破。其中,转接板又在三维集成封装技术中扮演着重要作用:芯片之间通过高密度的镀铜通孔转接板进行垂直互联,大大缩短互连线长度,这样一来便显著降低了系统的寄生参数,功耗,信号延迟以及尺寸等。在众多转接板中,Li-Al-Si光敏玻璃凭借其独特的可光刻特性,低损耗、高密度通孔、低成本、强绝缘等属性,被认为是最具潜力的三维转接板材料。With the development of microelectronics technology, quantum effects such as tunnel penetration in integrated circuits have become increasingly prominent, and Moore's Law has also encountered unprecedented bottlenecks, and these bottlenecks are expected to be broken through advanced three-dimensional integrated packaging technology. Among them, the adapter board plays an important role in the three-dimensional integrated packaging technology: the chips are vertically interconnected through the high-density copper-plated through-hole adapter board, which greatly shortens the length of the interconnection line, which significantly reduces the system parasitic parameters, power consumption, signal delay and size, etc. Among many transition boards, Li-Al-Si photosensitive glass is considered to be the most potential 3D transition board due to its unique photolithographic properties, low loss, high density through holes, low cost, strong insulation and other properties. Material.
目前,行业内应用较为广泛的两款商业化光敏玻璃:(1)基于Li-Al-Si玻璃体系的Foturan(德国肖特)。(2)基于Na-Zn-Al-Si玻璃体系的光热折变玻璃(photo-thermo-refractiveglass,PTR)。肖特公司的Foturan光敏玻璃由于其微结构图形化精确度高,质量稳定可靠而被广泛应用于电子,生物等诸多领域,其电学性能和机械性能如下表:At present, there are two widely used commercial photosensitive glasses in the industry: (1) Foturan (Schott, Germany) based on Li-Al-Si glass system. (2) Photo-thermo-refractive glass (PTR) based on Na-Zn-Al-Si glass system. SCHOTT's Foturan photosensitive glass is widely used in electronics, biology and many other fields due to its high precision in microstructure patterning and stable and reliable quality. Its electrical and mechanical properties are as follows:
随着5G时代到来,芯片的工作频率将会升高到GHz频段甚至毫米波,这对转接板的介电性能提出了更高要求;市场对于电子产品多功能、小型化的需求迫使芯片封装尺寸的进一步减小,也就需要转接板更小更薄,这便对转接板的机械性能提出了挑战。肖特公司现有的Li-Al-Si光敏玻璃由于含有大量碱金属离子,导致其高频下的介电损耗仍然不太乐观,从而限制了Li-Al-Si光敏玻璃在高频环境下的应用。另一方面,随着集成电路封装体积小型化的发展,转接板的厚度也在不断减薄,这对玻璃的机械性能也提出了更高的要求。最为关键的一点在于,国内的转接板材料不能总依赖于德国肖特公司的光敏玻璃,否则不仅会增加国内三维集成封装的成本,而且不自己掌握关键技术会让我们在三维集成封装技术领域陷入被动局面。所以说必须自主研制出高性能且较低成本的光敏玻璃,以及掌握好后续图形化、金属化、阳极键合等工艺,这将会为我国的三维集成封装奠定坚实的基础。With the advent of the 5G era, the operating frequency of the chip will increase to the GHz frequency band or even millimeter wave, which puts forward higher requirements on the dielectric properties of the adapter board; the market's demand for multi-function and miniaturization of electronic products forces chip packaging The further reduction in size also requires smaller and thinner adapter boards, which poses challenges to the mechanical properties of the adapter boards. SCHOTT's existing Li-Al-Si photosensitive glass contains a large amount of alkali metal ions, so its dielectric loss at high frequency is still not optimistic, which limits the performance of Li-Al-Si photosensitive glass in high frequency environment. application. On the other hand, with the development of the miniaturization of the integrated circuit package, the thickness of the adapter plate is also continuously reduced, which also puts forward higher requirements on the mechanical properties of the glass. The most critical point is that the domestic adapter board materials cannot always rely on the photosensitive glass of the German company SCHOTT, otherwise it will not only increase the cost of domestic 3D integrated packaging, but also not master the key technologies by ourselves. into a passive situation. Therefore, it is necessary to independently develop high-performance and low-cost photosensitive glass, and master the subsequent patterning, metallization, anodic bonding and other processes, which will lay a solid foundation for my country's three-dimensional integrated packaging.
为此,申请人于2017年1月13日提交了申请号为201710144943.5,名称为“低介电损耗的可敏化光敏玻璃及生产方法”,通过改良光敏玻璃的配方和制备工艺,得到介电损耗较低的光敏玻璃,随着研究的深入,在此基础上进一步地改良光敏玻璃的配方和制备工艺,可得到性能更优的光敏玻璃。To this end, the applicant submitted an application number of 201710144943.5 on January 13, 2017, entitled "Sensitized Photosensitive Glass with Low Dielectric Loss and Production Method". By improving the formula and preparation process of the photosensitive glass, a dielectric For photosensitive glass with lower loss, with the deepening of research, the formulation and preparation process of photosensitive glass can be further improved on this basis, and photosensitive glass with better performance can be obtained.
发明内容SUMMARY OF THE INVENTION
本发明所要解决的技术问题是提供一种Li-Al-Si光敏玻璃及其制备方法,进一步地提高光敏玻璃的介电性能和机械性能。The technical problem to be solved by the present invention is to provide a Li-Al-Si photosensitive glass and a preparation method thereof, so as to further improve the dielectric properties and mechanical properties of the photosensitive glass.
本发明解决其技术问题所采用的技术方案是:Li-Al-Si光敏玻璃的制备方法,采用以下重量份数的原料制备:The technical solution adopted by the present invention to solve the technical problem is: the preparation method of Li-Al-Si photosensitive glass adopts the following raw materials in parts by weight to prepare:
进一步地,所述碱土金属包括MgO、CaO、BaO以及SrO中的一种或多种。Further, the alkaline earth metal includes one or more of MgO, CaO, BaO and SrO.
进一步地,所述碱土金属包括MgO和CaO。Further, the alkaline earth metals include MgO and CaO.
进一步地,所述碱土金属包括0.5份CaO以及0.5份MgO。Further, the alkaline earth metal includes 0.5 parts of CaO and 0.5 parts of MgO.
进一步地,包括以下步骤:Further, the following steps are included:
将原料均匀混合并对原料进行加热,使原料在150~180min内升温至800~900℃,生产气体以及不透明烧结物;The raw materials are uniformly mixed and heated, so that the raw materials are heated to 800-900°C within 150-180 minutes to produce gas and opaque sintered products;
继续对原料进行加热,使原料在70~100min内升温至1200~1250℃,烧结物开始熔融并逐渐透明;Continue to heat the raw materials, so that the raw materials are heated to 1200-1250 ° C within 70-100 minutes, and the sintered material begins to melt and gradually becomes transparent;
继续对原料进行加热,使原料在30min~70min升温至1400~1500℃,玻璃液粘度降低,同时释放气态杂质,使玻璃液澄清;Continue to heat the raw materials, so that the raw materials are heated to 1400-1500 ° C in 30min-70min, the viscosity of the glass liquid is reduced, and gaseous impurities are released at the same time, so that the glass liquid is clarified;
玻璃液在1400~1500℃的温度下保温100~200min,使各组分均匀分布;The glass liquid is kept at a temperature of 1400-1500 ℃ for 100-200 minutes, so that the components are evenly distributed;
在30~70min内将玻璃液降温150~250℃,然后在20~50min内将玻璃液骤冷至200~300℃,得到玻璃;Cool the glass liquid by 150-250°C within 30-70 minutes, and then quench the glass liquid to 200-300°C within 20-50 minutes to obtain glass;
退火。annealing.
进一步地,退火过程为:Further, the annealing process is:
退火炉的初始温度为470~500℃,然后以0.11℃/min~0.143℃/min的速度将温度降低至180~220℃,最后在500至800min内冷却至室温。The initial temperature of the annealing furnace is 470-500°C, then the temperature is lowered to 180-220°C at a rate of 0.11°C/min-0.143°C/min, and finally cooled to room temperature within 500-800min.
Li-Al-Si光敏玻璃,采用上述Li-Al-Si光敏玻璃的制备方法制得。The Li-Al-Si photosensitive glass is prepared by the above-mentioned preparation method of the Li-Al-Si photosensitive glass.
进一步地,玻璃中Si4+、Al3+以及O2-的摩尔量满足:1:2<(Si+Al):O<1:2.5。Further, the molar amounts of Si 4+ , Al 3+ and O 2- in the glass satisfy: 1:2<(Si+Al):O<1:2.5.
本发明的有益效果是:本发明通过改进原料的配比,同时改良生产工艺,有效地提高光敏玻璃的介电性能和机械性能,与肖特公司的Foturan光敏玻璃以及申请人先前研究的光敏玻璃相比,介电性能和机械性能均有提高。The beneficial effects of the present invention are: the present invention effectively improves the dielectric properties and mechanical properties of the photosensitive glass by improving the ratio of raw materials and simultaneously improving the production process. In comparison, both the dielectric properties and mechanical properties are improved.
附图说明Description of drawings
图1是石英玻璃网络结构图。Figure 1 is a diagram of a quartz glass network structure.
图2是Li-Al-Si光敏玻璃网络结构图。Fig. 2 is the network structure diagram of Li-Al-Si photosensitive glass.
图3是不同冷却速率制得的玻璃样品图。Figure 3 is a graph of glass samples prepared at different cooling rates.
图4是晶核生长速率和晶体生长速率与温度的关系曲线图。Figure 4 is a graph showing the relationship between the nucleation growth rate and the crystal growth rate and temperature.
图5是玻璃样品的TG-DSC曲线图。Figure 5 is a TG-DSC graph of a glass sample.
图6为紫外吸收光谱示意图。Figure 6 is a schematic diagram of the UV absorption spectrum.
图7是曝光和未曝光的样品玻璃图。Figure 7 is a view of exposed and unexposed sample glass.
图8是未曝光的样品XRD衍射图。Figure 8 is an XRD diffractogram of an unexposed sample.
图9是曝光后的样品XRD衍射图。Figure 9 is the XRD diffractogram of the sample after exposure.
图10为各样品拉曼光谱的示意图。FIG. 10 is a schematic diagram of the Raman spectrum of each sample.
图11为对拉曼光谱中850~1250cm-1的频带进行高斯拟合的曲线图。FIG. 11 is a graph of Gaussian fitting to the frequency band of 850 to 1250 cm −1 in the Raman spectrum.
图12为高斯拟合曲线拟合峰的面积比示意图。FIG. 12 is a schematic diagram of the area ratio of the fitting peaks of the Gaussian fitting curve.
图13为掺Sr系列样品介电常数与频率的关系图。Figure 13 is a graph showing the relationship between the dielectric constant and frequency of the Sr-doped series samples.
图14为掺Sr系列样品频率为1GHz附近时介电损耗值。Figure 14 shows the dielectric loss values of the Sr-doped series samples when the frequency is around 1 GHz.
图15为掺Sr系列样品抗弯强度和表面硬度曲线。Figure 15 shows the flexural strength and surface hardness curves of Sr-doped series samples.
图16为玻璃熔制曲线图。Figure 16 is a graph of glass melting curves.
图17为退火曲线图。Figure 17 is an annealing graph.
具体实施方式Detailed ways
下面结合附图和实施例对本发明进一步说明。The present invention will be further described below in conjunction with the accompanying drawings and embodiments.
本发明的Li-Al-Si光敏玻璃的制备方法,采用以下重量份数的原料制备:The preparation method of the Li-Al-Si photosensitive glass of the present invention is prepared by using the following raw materials in parts by weight:
石英玻璃网络结构多为键强较大的Si-O-Si桥氧键相连,所以其具备优异的介电性能和稳定性能、较小的热膨胀系数等优点而被视为一种理想的玻璃结构,结构示意图如图1所示。但是石英玻璃无光敏性且熔点很高(1713℃),这将会大大增加能耗,若用其作为转接板材料就必须依赖激光通孔,这也将会大大增加转接板成本。The quartz glass network structure is mostly connected by Si-O-Si bridge oxygen bonds with strong bonds, so it has the advantages of excellent dielectric properties and stability, small thermal expansion coefficient, etc., and is regarded as an ideal glass structure. , the structure diagram is shown in Figure 1. However, quartz glass has no photosensitivity and has a high melting point (1713°C), which will greatly increase energy consumption. If it is used as an adapter plate material, it must rely on laser through holes, which will also greatly increase the cost of the adapter plate.
Li-Al-Si光敏玻璃正好弥补了这一缺陷,为了获得良好的性能,该光敏玻璃仍主要以SiO2含量为主,其质量分数占总含量的75%以上。但是加入了含Li、Na、K碱金属的氧化物后,Li+由于阳离子场强较大对玻璃网络主要起“积聚”作用,而Na+,K+则主要起“断裂”作用,桥氧键断裂形成非桥氧键,如图2(图中R表示碱土金属)所示,使得硅氧四面体[SiO4]原来的完整性和对称性遭到破坏从而造成玻璃结构疏松,性能变差。而且碱金属含量越大,性能变差得越严重,所以必须控制碱金属的含量。之所以要加入碱金属主要有以下两个原因:(1)碱金属具有高温助融的作用,使得SiO2能在1400℃-1500℃被熔化从而降低能耗及设备性能要求。(2)Li+是析出的偏硅酸锂Li2SiO3晶相的重要成分,再加入Na+和K+形成“混合碱效应”降低碱金属的扩散系数从而降低玻璃的介电损耗,热膨胀系数等。氧化铝Al2O3为中间体氧化物,捕获周围的游离氧,以四面体[A1O4]5-进入玻璃网络,它能提高玻璃熔融体黏度、稳定性、机械强度等,但过多的氧化铝Al2O3会影响玻璃的电学性能,大部分玻璃引入Al2O3的含量为1%~3.5%。[A1O4]5-比[SiO4]4-多出的一个负电荷与碱金属或者碱土金属这类网络外体离子相中和以减小电荷应力。碱土金属的加入一方面是为了进一步阻止Li+、Na+、K+碱金属离子随外电场的迁移,另一方面则是为了填补玻璃网络间隙增强致密度,从而提高机械性能,此外,碱土金属离子属于惰性气体离子,所以极化率低且在玻璃网络中配位数大,是一种良好的玻璃网络改性剂,因此,掺杂适量碱土金属能够改善玻璃机械性能和介电性能。适当的氧化锌可以提高玻璃的耐碱性同时也可以保护Ag+在高温不被还银原子Ag,过多则会增强玻璃析晶倾向。Sb2O3既是还原剂,相关的还原反应式为Li-Al-Si photosensitive glass just makes up for this defect. In order to obtain good performance, the photosensitive glass is still dominated by SiO 2 content, and its mass fraction accounts for more than 75% of the total content. However, after the addition of alkali metal oxides containing Li, Na and K, Li + mainly plays a "accumulation" effect on the glass network due to the large cation field strength, while Na + and K + mainly play a "fracture" effect, bridge oxygen The bond is broken to form a non-bridging oxygen bond, as shown in Figure 2 (R in the figure represents an alkaline earth metal), which destroys the original integrity and symmetry of the silicon-oxygen tetrahedron [SiO 4 ], resulting in loose glass structure and poor performance. . And the greater the alkali metal content, the worse the performance becomes, so the content of alkali metal must be controlled. There are two main reasons for adding alkali metal: (1) Alkali metal has the effect of high temperature melting, so that SiO 2 can be melted at 1400℃-1500℃ to reduce energy consumption and equipment performance requirements. (2) Li + is an important component of the precipitated lithium metasilicate Li 2 SiO 3 crystal phase, and then Na + and K + are added to form a "mixed alkali effect" to reduce the diffusion coefficient of alkali metals, thereby reducing the dielectric loss and thermal expansion of the glass. coefficients, etc. Alumina Al 2 O 3 is an intermediate oxide, which captures the surrounding free oxygen and enters the glass network in the form of tetrahedral [A1O 4 ] 5- , which can improve the viscosity, stability and mechanical strength of the glass melt, but too much. Alumina Al 2 O 3 will affect the electrical properties of the glass, and the content of Al 2 O 3 introduced into most glasses is 1% to 3.5%. [A1O 4 ] 5- has one more negative charge than [SiO 4 ] 4- and neutralizes the extra-network bulk ions such as alkali metals or alkaline earth metals to reduce the charge stress. The addition of alkaline earth metals is on the one hand to further prevent the migration of Li + , Na + , K + alkali metal ions with the external electric field; Ion is an inert gas ion, so it has low polarizability and a large coordination number in the glass network. It is a good glass network modifier. Therefore, doping an appropriate amount of alkaline earth metal can improve the mechanical properties and dielectric properties of glass. Appropriate zinc oxide can improve the alkali resistance of the glass and can also protect Ag+ from being reduced to silver atom Ag at high temperature. Too much zinc oxide will enhance the crystallization tendency of the glass. Sb 2 O 3 is both a reducing agent, and the relevant reduction reaction formula is
2Ce4++Sb3+→2Ce3++Sb5+ 2Ce 4+ +Sb 3+ →2Ce 3+ +Sb 5+
同时Sb2O3又是澄清剂。Ce3+吸收光子能量而释放出析晶所需要的自由电子,扮演着光敏剂的角色。成核剂Ag+则捕获上述自由电子形成原子簇,随温度的上升并逐渐成长为晶核从而诱导偏硅酸锂晶相(Li2SiO3)的析出。At the same time Sb 2 O 3 is a clarifying agent. Ce 3+ absorbs photon energy and releases free electrons required for crystallization, and acts as a photosensitizer. The nucleating agent Ag+ captures the above free electrons to form atomic clusters, which gradually grow into crystal nuclei with the increase of temperature, thereby inducing the precipitation of lithium metasilicate crystal phase (Li 2 SiO 3 ).
碱土金属中,镭、铍等具有放射性或者有剧毒,因此,本发明的碱土金属包括MgO、CaO、BaO以及SrO中的一种或多种。Among the alkaline earth metals, radium, beryllium, etc. are radioactive or highly toxic. Therefore, the alkaline earth metals of the present invention include one or more of MgO, CaO, BaO and SrO.
合理的玻璃烧结温度曲线和退火温度曲线是制备结构和性能稳定的Li-Al-Si光敏玻璃的前提,经过多次试验发现,当烧结的最高温度较低(<1450℃)时,粉料烧结不充分会造成明显的小气泡,如图3中1#所示;提高了烧结高温度,保温时间较长时有时会出现不明黄色丝状物如图3中2#所示;经过不断探索,最终得到如图3中3#所示的出无明显气泡和任何不明黄色丝状物的透明玻璃,改良后的玻璃形成工艺包括以下五个阶段:Reasonable glass sintering temperature curve and annealing temperature curve are the premise of preparing Li-Al-Si photosensitive glass with stable structure and performance. Insufficient will cause obvious small bubbles, as shown in 1# in Figure 3; the high sintering temperature is increased, and sometimes unknown yellow filaments appear when the holding time is long, as shown in Figure 3 in 2#; After continuous exploration, Finally, a transparent glass without obvious bubbles and any unknown yellow filaments as shown in 3# in Figure 3 is obtained. The improved glass forming process includes the following five stages:
阶段一:将原料均匀混合并对原料进行加热,使原料在150~180min内升温至800~900℃,生产气体以及不透明烧结物。800~900℃之前,原料主要以固体状态的形式参与反应,生成物包含CO2等气体及由硅酸盐与SiO2组成的不透明烧结物。Stage 1: The raw materials are uniformly mixed and heated, so that the raw materials are heated to 800-900° C. within 150-180 minutes, and gas and opaque sintered products are produced. Before 800~900℃, the raw materials mainly participate in the reaction in the form of solid state, and the products include gases such as CO 2 and opaque sintered products composed of silicate and SiO 2 .
阶段二:继续对原料进行加热,使原料在70~100min内升温至1200~1250℃,烧结物开始熔融并逐渐透明。随着温度上升至1200~1250℃,烧结物开始熔融慢慢至透明体,但玻璃液中存在大量气泡,条纹,组分也不均匀。Stage 2: Continue to heat the raw material, so that the raw material is heated to 1200-1250° C. within 70-100 minutes, and the sintered product begins to melt and gradually becomes transparent. As the temperature rises to 1200-1250 °C, the sintered material begins to melt and slowly becomes a transparent body, but there are a lot of bubbles, streaks and uneven composition in the glass liquid.
阶段三:继续对原料进行加热,使原料在30min~70min升温至1400~1500℃,玻璃液粘度降低至约10Pa·s,同时释放气态杂质,使玻璃液澄清。Stage 3: Continue to heat the raw materials, so that the raw materials are heated to 1400-1500 ° C in 30-70 minutes, the viscosity of the glass liquid is reduced to about 10Pa·s, and gaseous impurities are released at the same time to clarify the glass liquid.
阶段四:玻璃液在1400~1500℃的温度下保温100~200min,由于扩散的作用,各化学组分逐渐趋于均匀分布,此时条纹,气泡已逐渐减少。Stage 4: The glass liquid is kept at a temperature of 1400-1500 ℃ for 100-200 minutes. Due to the effect of diffusion, the chemical components gradually tend to be evenly distributed. At this time, the streaks and bubbles have gradually decreased.
阶段五:在30~70min内将玻璃液降温150~250℃,以便使玻璃液出料时具备合适的粘度,然后在20~50min内将玻璃液骤冷至200~300℃,得到玻璃。由于玻璃态物质相比于结晶态物质来说内能更大,根据能量最小原理,玻璃总是有降低自生内能转化为多晶体的趋势。玻璃之所以能稳定存在的原因在于其与晶体内能的差值不能大于析晶势垒,否则玻璃便会结晶。动力学的核心观点认为:玻璃熔融体的冷却速度是玻璃形成的关键。支撑该观点的事实依据是将最好的玻璃生成物(如SiO2、B2O3等)熔融体缓慢冷却后也会析出晶体;甚至不宜玻璃化的金属,只要使其熔融体的冷却速度大于质点排列成为晶体的速度亦可成为金属玻璃。从熔体骤冷至玻璃体的过程中,晶核生成与晶体长大是物质结晶的两个过程,图4是晶核生成与晶体生长的速率与温度的关系曲线图,温度从d降低到b的过程中晶体生长速度先增加后减小至0,温度从c降低到a的过程中晶核生成速率先增加后减小至0,结晶条件为晶体在晶核的基础上生长,即结晶发生在b至c之间温度区间,那么要防止或减少结晶,可减小玻璃从温度c降低到温度b的时间,即加快冷却速度。因此,本发明在20~50min内将玻璃液骤冷至200~300℃,减少析晶现象,保证玻璃品质。Stage 5: Cool the glass liquid by 150-250°C within 30-70 minutes so that the glass liquid has a suitable viscosity when discharging, and then quench the glass liquid to 200-300°C within 20-50 minutes to obtain glass. Since glassy substances have higher internal energy than crystalline substances, according to the principle of minimum energy, glass always has a tendency to reduce the self-generated internal energy and transform into polycrystals. The reason why glass can exist stably is that the difference between it and the internal energy of the crystal cannot be greater than the crystallization barrier, otherwise the glass will crystallize. The core idea of kinetics is that the cooling rate of the glass melt is the key to glass formation. The fact that supports this view is based on the fact that the best glass formers (such as SiO 2 , B 2 O 3 , etc.) will slowly cool the melt, and crystals will precipitate; even metals that are not suitable for vitrification, as long as the cooling rate of the melt is made. The speed at which the particles are arranged to form crystals is greater than that of the metallic glass. In the process of quenching from melt to glass body, nucleation and crystal growth are two processes of material crystallization. Figure 4 is a graph showing the relationship between the rate of nucleation and crystal growth and temperature. The temperature decreases from d to b In the process of , the crystal growth rate first increases and then decreases to 0. In the process of decreasing the temperature from c to a, the nucleation rate first increases and then decreases to 0. The crystallization condition is that the crystal grows on the basis of the nuclei, that is, crystallization occurs. In the temperature range between b and c, to prevent or reduce crystallization, the time for the glass to decrease from temperature c to temperature b can be reduced, that is, the cooling rate can be accelerated. Therefore, in the present invention, the glass liquid is quenched to 200-300° C. within 20-50 minutes, so as to reduce the crystallization phenomenon and ensure the glass quality.
在出料冷却过程中,由于冷却环境,浇筑手法等条件的影响,玻璃基体内难免会产生应力。这种应力的存在将会大大降低玻璃的机械强度甚至会导致玻璃开裂。为消除该应力和提高玻璃化学组分的均匀性,需要将玻璃置于某一温度环境下并保持足够长的时间然后再慢慢地冷却下来,以便不再存在超过允许范围的应力。我们便将这一过程称为玻璃的退火热处理。不同的熔炼温度曲线制备出玻璃样品的性能也有所不同,特别是玻璃体浇筑成型后的热处理退火曲线将会直接影响到其机械性能的好坏,所以需要探索出一套更为合理的退火工艺参数曲线,本发明具体地退火过程为:In the process of discharging and cooling, due to the influence of cooling environment, pouring method and other conditions, stress will inevitably occur in the glass matrix. The existence of this stress will greatly reduce the mechanical strength of the glass and even cause the glass to crack. To eliminate this stress and improve the uniformity of the chemical composition of the glass, the glass needs to be kept at a certain temperature for a long enough time and then slowly cooled down so that there is no more stress beyond the allowable range. We call this process the annealing heat treatment of glass. The properties of glass samples prepared from different melting temperature curves are also different, especially the heat treatment annealing curve after the glass body is poured and formed will directly affect its mechanical properties, so it is necessary to explore a more reasonable set of annealing process parameters Curve, the specific annealing process of the present invention is:
退火炉的初始温度为470~500℃,然后以0.11℃/min~0.143℃/min的速度将温度降低至180~220℃,最后在500至800min内冷却至室温。The initial temperature of the annealing furnace is 470-500°C, then the temperature is lowered to 180-220°C at a rate of 0.11°C/min-0.143°C/min, and finally cooled to room temperature within 500-800min.
玻璃的退火上限温度可以设置在转变温度Tg以上和软化温度Ts以下。一方面,在此温度区间内,玻璃基体中扩散势垒降低,质点可以吸收热量进行位移,从而削弱由玻璃体内温度梯度而产生的热应力和由组分的不均匀而产生的结构应力。另一方面,软化温度Ts通常低于结晶温度Tc以至于玻璃体内不会自发结晶,同时浇筑成型的玻璃形状也不会被改变。The annealing upper limit temperature of the glass can be set above the transition temperature T g and below the softening temperature T s . On the one hand, in this temperature range, the diffusion barrier in the glass matrix is lowered, and the particles can absorb heat for displacement, thereby weakening the thermal stress caused by the temperature gradient in the glass body and the structural stress caused by the inhomogeneity of the composition. On the other hand, the softening temperature T s is usually lower than the crystallization temperature T c so that the glass body does not spontaneously crystallize, and the shape of the cast glass is not changed.
图5为玻璃样品的TG-DSC曲线图,从图5中可得玻璃样品的转变温度Tg为470℃附近,熔化点温度Tm在932℃附近,整个升温过程不存在峰向朝下的放热峰,说明未经曝光的样品不会仅因受热而自发结晶,析晶性能稳定。同时观察TG曲线,玻璃的重量在升温过程中几乎保持不变,说明玻璃样品不含受热易挥发或者分解的成分,进一步说明该玻璃的热稳定性较好。Figure 5 is the TG-DSC curve diagram of the glass sample. It can be seen from Figure 5 that the transition temperature T g of the glass sample is around 470 °C, the melting point temperature T m is around 932 °C, and there is no downward peak in the whole heating process. The exothermic peak indicates that the unexposed sample will not spontaneously crystallize only due to heating, and the crystallization performance is stable. At the same time, the TG curve was observed, and the weight of the glass remained almost unchanged during the heating process, indicating that the glass sample did not contain components that were easily volatile or decomposed by heating, further indicating that the thermal stability of the glass was good.
玻璃的退火实质上体现在以下两个过程:其一,应力的削减和甚至消失;其二,要防止产生新的应力。保温结束后冷却过程中,玻璃体内应力的产生主要与温度梯度有关,不同的冷却速率、制品的厚度及其性质产生的应力大小各异。根据上述分析以及样品DSC测试结果,退火最高温度设定为500℃,冷却速率需要根据该实验样品厚度、形状进行确定。The annealing of glass is essentially reflected in the following two processes: first, stress reduction and even disappearance; second, to prevent the generation of new stress. During the cooling process after the heat preservation, the stress in the glass body is mainly related to the temperature gradient, and the stress generated by different cooling rates, product thicknesses and properties varies. According to the above analysis and sample DSC test results, the maximum annealing temperature is set to 500°C, and the cooling rate needs to be determined according to the thickness and shape of the experimental sample.
为了降低Li+,Na+和K+在外电场作用下的迁移率和致密化玻璃网络结构,需要掺杂一些自身极化率低,阳离子场强大且半径适中的金属氧化物。基于上述特征,本发明采用配位数较多的碱土金属系列进行掺杂。与碱金属离子(Li+除外)相比,碱土金属离子场强较大,与氧离子的结合能力较强,半径略大于碱金属离子,使得它们在外电场的作用下迁移率较慢,能有效阻挡碱金属离子的迁移。但是,碱土金属离子同样属于网络外体离子,含量过多同样会导致非桥氧含量急剧增加从而破坏玻璃网络结构的稳定性,所以需要探索各碱土金属离子的最佳掺杂含量以获得更优异的性能,下面在其他原料和生产工艺不变的条件下,改变碱土金属的种类和含量,制备多个玻璃样品,以验证碱土金属的种类和含量对玻璃性能的影响。In order to reduce the mobility of Li + , Na + and K + under the action of an external electric field and to densify the glass network structure, some metal oxides with low self-polarizability, strong cation field and moderate radius need to be doped. Based on the above features, the present invention adopts alkaline earth metal series with more coordination numbers for doping. Compared with alkali metal ions (except Li + ), alkaline earth metal ions have larger field strength, stronger binding ability with oxygen ions, and their radius is slightly larger than that of alkali metal ions, which makes their mobility slower under the action of external electric field and can effectively Block the migration of alkali metal ions. However, alkaline earth metal ions also belong to the out-of-network ions. Too much content will also lead to a sharp increase in the content of non-bridging oxygen, which will destroy the stability of the glass network structure. Therefore, it is necessary to explore the optimal doping content of each alkaline earth metal ion to obtain better Under the condition that other raw materials and production process remain unchanged, the types and contents of alkaline earth metals are changed, and multiple glass samples are prepared to verify the influence of types and contents of alkaline earth metals on glass properties.
未掺杂碱土金属(0wt%)的实验样品命名为S0,用已掺杂SrO的含量作为命名的下标,例如C0.5,C1,C1.5,C2分别表示0.5wt%、1wt%、1.5wt%、2wt%的SrO掺杂样品。The experimental sample of undoped alkaline earth metal (0wt%) is named S 0 , and the content of doped SrO is used as the subscript of the nomenclature, for example, C 0.5 , C 1 , C 1.5 , and C 2 represent 0.5 wt % and 1 wt %, respectively , 1.5wt%, 2wt% SrO doped samples.
(一)光敏性能验证(1) Photosensitive performance verification
光敏性是本实验Li-Al-Si光敏玻璃的基本前提,是否具备光敏性决定着其后续曝光、刻蚀等微图形化工艺是否得以实现。为了验证本实验玻璃样品的光敏性能,首先根据玻璃样品对紫外吸收光谱的测试来确定曝光波长,如图6所示:在波长为310nm左右存在一个明显的吸收峰,该峰对应着Ce3+吸收光子能量而释放电子这一反应过程,反应方程式见图中的公式。然后将抛光后的片状光敏玻璃样品放置在波长为310nm左右的汞灯紫外光下进行15min的掩膜曝光,曝光完毕之后,需要将玻璃样品表面洗净后放入退火炉进行退火显影。The photosensitivity is the basic premise of the Li-Al-Si photosensitive glass in this experiment. Whether it has photosensitivity determines whether the subsequent exposure, etching and other micro-patterning processes can be realized. In order to verify the photosensitivity of the glass sample in this experiment, the exposure wavelength was first determined according to the test of the UV absorption spectrum of the glass sample, as shown in Figure 6: there is an obvious absorption peak at the wavelength of about 310nm, which corresponds to the Ce 3+ The reaction process of absorbing photon energy and releasing electrons, the reaction equation is shown in the formula. Then, the polished sheet-like photosensitive glass sample was placed under the ultraviolet light of a mercury lamp with a wavelength of about 310nm for 15min mask exposure. After exposure, the surface of the glass sample needs to be cleaned and placed in an annealing furnace for annealing and development.
为了让将曝光后的玻璃样品生成偏硅酸锂(Li2SiO3)结晶相,采用如下退火工艺:将曝光与未曝光的玻璃样品放到高温退火炉中随炉以3℃/min的速率升到555℃后保温两小时,再以1℃/min的降温速率缓慢降至室温。通过图7可以明显看出,经过紫外曝光且退火的样品变为红棕色的玻璃陶瓷,而未经紫外曝光但经历同样退火程序的样品看起来仍旧是透明色的玻璃状。为了确定红棕色结晶体的物相,以及未曝光的玻璃体内是否有微晶相的存在,对两个样品进行X射线衍射分析(XRD)测试,测试结果显示:如图8所示,未曝光的样品测试曲线上没有任何尖锐的析晶峰,说明该样品仍处于玻璃态,即不形成任何晶相。然而,如图9所示,已曝光玻璃样品的XRD曲线上存在着明显的析晶峰,根据对比标准卡片PDF#72-1140和PDF#40-0376,可以确定曝光玻璃中形成的晶体绝大分为偏硅酸锂Li2SiO3,仅有很小一部分晶体为焦硅酸锂晶相Li2Si3O5。In order to generate lithium metasilicate (Li 2 SiO 3 ) crystalline phase from the exposed glass samples, the following annealing process is used: the exposed and unexposed glass samples are placed in a high-temperature annealing furnace at a rate of 3 °C/min with the furnace. After rising to 555°C, the temperature was kept for two hours, and then slowly lowered to room temperature at a cooling rate of 1°C/min. It is evident from Figure 7 that the UV-exposed and annealed samples turned into reddish-brown glass-ceramics, while the samples that were not UV-exposed but subjected to the same annealing procedure still appeared to be clear-colored glassy. In order to determine the phase of the reddish-brown crystals and whether there is a microcrystalline phase in the unexposed glass body, X-ray diffraction (XRD) analysis was performed on the two samples. The test results showed: as shown in Figure 8, the unexposed glass There is no sharp crystallization peak on the test curve of the sample, indicating that the sample is still in a glass state, that is, no crystal phase is formed. However, as shown in Figure 9, there are obvious crystallization peaks on the XRD curve of the exposed glass sample. According to the comparison standard card PDF#72-1140 and PDF#40-0376, it can be determined that the crystals formed in the exposed glass are mostly divided It is lithium metasilicate Li 2 SiO 3 , and only a small part of the crystal is Li 2 Si 3 O 5 in the lithium disilicate crystal phase.
以上结果说明碱土金属Sr2+的掺杂并不影响Li-Al-Si光敏玻璃的光敏性,甚至可能会促进选择性析晶的性能,例如C1.5在38°左右的峰值强度大于S0样品的峰值强度。The above results indicate that the doping of alkaline earth metal Sr 2+ does not affect the photosensitivity of Li-Al-Si photosensitive glass, and may even promote the performance of selective crystallization. For example, the peak intensity of C 1.5 around 38° is greater than that of S 0 sample the peak intensity.
(二)结构性能分析(2) Structural performance analysis
外部条件不变的情况下,要提高玻璃样品的性能必定要巩固其微观网络结构。为了探究碱土金属Sr2+进入玻璃网格后对其结构的影响,可以通过该系列样品的拉曼光谱图进行结构分析,其拉曼光谱如下图10所示,拉曼光谱对应的振动模式如下:Under the condition of constant external conditions, to improve the performance of glass samples must consolidate their microscopic network structure. In order to explore the influence of alkaline earth metal Sr 2+ on its structure after entering the glass grid, the Raman spectrum of this series of samples can be used for structural analysis. The Raman spectrum is shown in Figure 10 below, and the vibration mode corresponding to the Raman spectrum is as follows :
从拉曼光谱和振动模式表可以看出,除了C0.5样品以外,其他3个掺杂样品与未掺杂样品S0的拉曼振动峰的位移以及强度变化甚微,至少可以说明少量的SrO掺杂对玻璃网络结构的并不会产生明显的破坏性。但是C0.5样品在471cm-1的桥氧键Si-O0弯曲振动峰比样品S0较高,而在555cm-1和1080cm-1的振动峰又明显较低,这一微观结构可能会造成该样品性能的变化。From the Raman spectrum and vibrational mode table, it can be seen that except for the C 0.5 sample, the displacement and intensity of the Raman vibration peaks of the other three doped samples and the undoped sample S 0 have little change, which can at least explain a small amount of SrO Doping does not cause significant damage to the glass network structure. However, the Si-O0 bending vibration peak of the bridge oxygen bond Si-O0 of the C 0.5 sample at 471 cm -1 is higher than that of the sample S 0 , and the vibration peaks at 555 cm -1 and 1080 cm -1 are significantly lower. This microstructure may cause the Changes in sample properties.
根据上述分析可知,2%wt含量以内的SrO掺杂对于玻璃网络振动的影响小,不会造成更多的振动损耗,玻璃介电和机械性能的改善主要与Sr2+影响Qn(n=1,2,3,4,n为桥氧的个数)的含量分布有关。为了进一步了解Sr2+是如何影响玻璃微观结构,我们需要对拉曼光谱中850~1250cm-1的频带进行高斯拟合。在上述频段中大约在950cm-1,1000cm-1,1090cm-1,1150cm-1分别对应Q1(Si2O7 6-dimmer),Q2(SiO3 2-chain),Q3(Si2O5 2-sheet),Q4(SiO23Dnetwork)结构单元的Si-O伸缩振动,拟合曲线如图11示。According to the above analysis, SrO doping within 2%wt has little effect on the vibration of the glass network and will not cause more vibration loss. 1, 2, 3, 4, n is the number of bridge oxygen) content distribution. In order to further understand how Sr 2+ affects the glass microstructure, we need to perform Gaussian fitting to the band between 850 and 1250 cm -1 in the Raman spectrum. In the above frequency bands, about 950cm -1 , 1000cm -1 , 1090cm -1 , 1150cm -1 correspond to Q 1 (Si 2 O 7 6- dimmer), Q 2 (SiO 3 2- chain), Q 3 (Si 2 The Si-O stretching vibration of O 5 2- sheet), Q 4 (SiO 2 3Dnetwork) structural unit, the fitting curve is shown in Figure 11.
拟合后的4个峰面积之比对应着相应的Q1,Q2,Q3,Q4结构单元在该玻璃结构中的相对含量大小,经过拟合计算,以百分比的形式给出4个拟合峰的面积之比,如图12所示。在三维扇形图上可以很形象地看出,从S0到C1样品,Q4结构单元的相对含量由36.16%降到18.34%,然而Q3结构单元由31.59%升至54.94%,Q1结构单元的相对含量基本不变,Q2结构单元的含量却有下降的趋势。当SrO的掺杂含量超过1%时,趋势开始反转:Q2、Q4结构单元的相对含量略有上升,Q3结构单元含量则在下降。这两种截然不同的现象可以通过以下两个反应式加以解释:The ratio of the four peak areas after fitting corresponds to the relative content of the corresponding Q 1 , Q 2 , Q 3 , Q 4 structural units in the glass structure. After fitting and calculation, the four peaks are given in the form of percentages The ratio of the areas of the fitted peaks is shown in Figure 12. It can be clearly seen from the three-dimensional sector diagram that from S 0 to C 1 samples, the relative content of Q 4 structural unit decreased from 36.16% to 18.34%, while the Q 3 structural unit increased from 31.59% to 54.94%, Q 1 The relative content of structural units remained basically unchanged, but the content of Q 2 structural units had a decreasing trend. When the doping content of SrO exceeds 1%, the trend begins to reverse: the relative content of Q 2 and Q 4 structural units increases slightly, while the content of Q 3 structural unit decreases. These two distinct phenomena can be explained by the following two reaction equations:
式一formula one
2Q4+Q2-→2Q3 2Q 4 +Q 2- → 2Q 3
式二
式中O2-来源与SrO提供的游离氧。当SrO的掺杂含量小于1wt%时,反应式一起主要作用:Q4结构单元吸收来自SrO提供的游离氧变为Q3结构单元。Q2结构单元通过反应式二也有一小部分转化成了Q3;一旦SrO的掺杂含量超过1wt%时,Q3结构单元的含量过高,将会部分转换为Q4结构单元和Q2结构单元。如果碱土金属掺杂含量过高,除了式一的反应过程,还主要会发生如下的反应过程In the formula, O 2- comes from the free oxygen provided by SrO. When the doping content of SrO is less than 1 wt%, the reaction formulas together play a major role: the Q4 structural unit absorbs the free oxygen provided from SrO to become the Q3 structural unit. A small part of the Q 2 structural unit is also converted into Q 3 through the
式三formula three
2Q3+Q2-→2Q2 2Q 3 +Q 2- → 2Q 2
式四formula four
2Q2+Q2-→2Q1 2Q 2 +Q 2- → 2Q 1
Q2和Q1结构单元的增多将严重破坏硅氧四面体[SiO4]的对称性和稳定性,这也是为什么过量碱土金属掺杂将会导致玻璃性能恶化的原因。The increase of Q 2 and Q 1 structural units will seriously destroy the symmetry and stability of the silicon-oxygen tetrahedron [SiO 4 ], which is why excessive alkaline earth metal doping will lead to the deterioration of glass properties.
了解清楚了碱土金属氧化物SrO对玻璃结构影响之后,我们再来看看该系列样品的性能测试结果,如图13、图14和图15所示,图中五角星表示该系列样品中综合性能最佳的样品(下同)。将此处的介电性能和机械性能的实验结果与前面的结构分析对照起来看,可以发现如下规律:除了C0.5样品外,介电损耗和介电常数的值随Q3结构单元的增多而降低,随Q3结构单元的降低而增加;抗弯强度和表面硬度的值却与介电性能恰恰相反:机械性能先随Q3结构单元的增多而增大,再随Q3结构单元的减少而变弱。其中C1的Q3结构单元含量最高,因此综合性能最强。正如拉曼光谱预测一样,C0.5样品的介电常数,介电损耗,抗弯强度均偏离该体系的变化趋势。经过分析与排查,C0.5样品出现异常的原因很可能是该样品基质内组分较大程度不均匀造成的,因为重新配制该样品并研磨均匀后经过同样的烧结、退火工艺制成样品测试得到的结果大为改善,例如机械强度由原来的78.5MPa变为155MPa,使得C组样品的机械性能从S0到C1再到C2基本上符合先增加后降低的趋势(此处加以说明,图中便不再给出)。After understanding the effect of alkaline earth metal oxide SrO on the glass structure, let's take a look at the performance test results of this series of samples, as shown in Figure 13, Figure 14 and Figure 15. The five-pointed star in the figure indicates that the comprehensive performance of this series of samples is the best. The best sample (the same below). Comparing the experimental results of the dielectric and mechanical properties here with the previous structural analysis, the following rules can be found: Except for the C 0.5 sample, the values of dielectric loss and dielectric constant increase with the increase of the Q structural unit. decreased and increased with the decrease of the Q3 structural unit; the values of flexural strength and surface hardness were just opposite to the dielectric properties: the mechanical properties first increased with the increase of the Q3 structural unit, and then with the decrease of the Q3 structural unit and become weaker. Among them, C 1 has the highest content of Q 3 structural unit, so the comprehensive performance is the strongest. As predicted by Raman spectroscopy, the dielectric constant, dielectric loss, and flexural strength of the C 0.5 sample all deviate from the changing trend of this system. After analysis and investigation, the reason for the abnormality of the C 0.5 sample is likely to be caused by a large degree of inhomogeneity in the matrix of the sample, because the sample was reconstituted and ground to be uniform, and the sample was tested by the same sintering and annealing process. The results are greatly improved, for example, the mechanical strength is changed from the original 78.5MPa to 155MPa, so that the mechanical properties of the C group samples from S 0 to C 1 to C 2 basically follow the trend of increasing first and then decreasing (explained here, not shown in the figure).
(三)结果原因分析(3) Analysis of the cause of the result
本实验玻璃样品介电性能和机械性能得到改善的原因主要与以下两个方面有关:一方面,在玻璃结构中引入网络外体离子的情况下,Q3结构单元能使硅氧四面体[SiO4]遭到的破坏程度最轻,从而保证玻璃网络结构的稳定性。当适量Sr2+进入玻璃网络后充当网络改性剂(对玻璃网络起积聚作用)位于带负电的非桥氧(NBO)附近的四面体网络的间隙位点,由于其离子半径大于Li+、Na+、K+且阳离子电场强度(Z/r2)也较大,使其与非桥氧键的结合力大于Na+、K+与非桥氧键的结合力,在外电场的作用下Sr2+能有效阻挡Li+、Na+、K+的迁移和振动,从而降低介电损耗。另一方面,Q3结构单元的增多可以增加位于带负电NBO周围的网络外体阳离子的分布均匀性,从而减小组分不均匀造成的结构应力。同时Sr2+在玻璃微观网络结构中也充当着电荷平衡剂[58]的角色,在库仑力的作用下与四面体[A1O4]5-相中和,减小电荷应力的同时提高玻璃的致密度从而提高光敏玻璃样品的机械强度。The reasons for the improved dielectric and mechanical properties of the glass samples in this experiment are mainly related to the following two aspects: on the one hand, in the case of introducing out-of-network bulk ions into the glass structure, the Q3 structural unit can make the silicon-oxygen tetrahedron [SiO 4 ] The damage suffered is the least, thus ensuring the stability of the glass network structure. When an appropriate amount of Sr 2+ enters the glass network and acts as a network modifier (accumulating the glass network), it is located at the interstitial sites of the tetrahedral network near the negatively charged non-bridging oxygen (NBO), because its ionic radius is larger than that of Li + , Na + , K + and the cationic electric field strength (Z/r 2 ) are also large, so that the binding force between Na + , K + and the non-bridging oxygen bond is greater than that of Na + , K + and the non-bridging oxygen bond. Under the action of the external electric field, Sr 2+ can effectively block the migration and vibration of Li + , Na + , K + , thereby reducing the dielectric loss. On the other hand, the increase of Q3 structural units can increase the distribution uniformity of the out-of-network cations located around the negatively charged NBO, thereby reducing the structural stress caused by the inhomogeneous composition. At the same time, Sr 2+ also acts as a charge balancer in the glass micro-network structure [58] , neutralizing with the tetrahedral [A1O 4 ] 5- phase under the action of Coulomb force, reducing the charge stress and improving the glass's properties. Density thereby increasing the mechanical strength of the photosensitive glass sample.
从SrO掺杂系列样品的测试结果可以看出,0wt%~2wt%的掺杂范围内,介电性能出现极小值和机械性能出现极大值,并且随着SrO掺杂含量超过1wt%,介电性能和机械性能整体都有恶化的趋势,说明该掺杂范围应当控制在不超过1wt%。From the test results of SrO doped series samples, it can be seen that within the doping range of 0wt% to 2wt%, the dielectric properties have a minimum value and mechanical properties have a maximum value, and as the SrO doping content exceeds 1wt%, the The overall dielectric properties and mechanical properties have a tendency to deteriorate, indicating that the doping range should be controlled within 1 wt%.
由于Mg,Ca,Sr,Ba属于同一族元素并且它们都是玻璃网络外体离子,对于玻璃网络的改性原理基本相同,但各自属性(阳离子场强,离子半径等)又略有差异,对于玻璃的网络的改性强度也就会有所不同。因此分别在原始玻璃样品S0中掺杂Mg、Ca、Ba,并根据上述方式验证各碱土金属对玻璃性能的影响,然后选出对玻璃性能提升最佳的两种碱土金属,这两种碱土金属为MgO和CaO。再分别在原始玻璃样品S0中掺杂不同含量的MgO和CaO,最终得到碱土金属的最佳种类和配比:碱土金属采用0.5份CaO以及0.5份MgO。Since Mg, Ca, Sr, and Ba belong to the same group of elements and they are all external ions in the glass network, the modification principles for the glass network are basically the same, but their properties (cation field strength, ionic radius, etc.) are slightly different. The modified strength of the glass network will also vary. Therefore, the original glass sample S 0 was doped with Mg, Ca, and Ba respectively, and the influence of each alkaline earth metal on the glass performance was verified according to the above method, and then the two alkaline earth metals that improved the glass performance the best were selected. The metals are MgO and CaO. The original glass sample S 0 was then doped with different contents of MgO and CaO respectively, and finally the optimal types and proportions of alkaline earth metals were obtained: 0.5 parts of CaO and 0.5 parts of MgO were used for alkaline earth metals.
Li-Al-Si光敏玻璃,采用上述的Li-Al-Si光敏玻璃的制备方法制得,玻璃中Si4+、Al3+以及O2-的摩尔量满足:1:2<(Si+Al):O<1:2.5Li-Al-Si photosensitive glass is prepared by the above-mentioned preparation method of Li-Al-Si photosensitive glass, and the molar amounts of Si 4+ , Al 3+ and O 2- in the glass satisfy: 1:2<(Si+Al ):O<1:2.5
玻璃微观网络结的好坏决定着其宏观性能的优劣,而玻璃网络结构又主要与各化学组分的含量有直接关系,所以恰当的化学组分配比是获得一个稳定且坚固的玻璃网络的基础。本发明Li-Al-Si光敏玻璃化学组分配比的优化思想来源于石英玻璃网络结构,因为后者具备优异的介电性能,介电常数3.7~3.9,介电损耗为10-4数量级。在石英玻璃网络结构中(见图1),基本都是键能较大的Si-O-Si桥氧键且无迁移率较高的网络外体离子,每个[SiO4]四面体中Si:O=1:2(摩尔比);而在Li-Al-Si光敏玻璃网络结构中,引入了碱金属及其他氧化物势必会造成部分桥氧键的断裂而形成键能较低的Si-O非桥氧键以及网络空隙中存在Li+,Na+,K+和游离O2-等网络外体离子。如果形成非桥氧键的数目较多将会造成玻璃网络骨架疏松从而导致一系列性能的恶化。为了让[SiO4]四面体的完整性和对称性的破坏程度降到最低,理想情况下遭到破坏的[SiO4]四面体中至多出现一个非桥氧键(见图2),那么此时四面体中Si:O=1:2.5(摩尔比)。因此在设计玻璃化学组分配比时,为了让非桥氧的破坏程度降到最低,必须控制玻璃网络中氧离子的数量,故将玻璃网络生成体Si4+与中间体Al3+的摩尔量之和跟所有氧化物提供的O2-的摩尔量满足以下不等式:The quality of the glass micro-network structure determines the quality of its macroscopic properties, and the glass network structure is mainly directly related to the content of each chemical component, so the appropriate chemical component distribution ratio is to obtain a stable and strong glass network. Base. The optimization idea of the chemical composition ratio of the Li-Al-Si photosensitive glass of the present invention is derived from the quartz glass network structure, because the latter has excellent dielectric properties, the dielectric constant is 3.7-3.9, and the dielectric loss is in the order of 10-4 . In the quartz glass network structure (see Figure 1), there are basically Si-O-Si bridge oxygen bonds with larger bond energy and no extra-network bulk ions with higher mobility, and Si in each [SiO 4 ] tetrahedron :O=1:2 (molar ratio); and in the Li-Al-Si photosensitive glass network structure, the introduction of alkali metals and other oxides will inevitably cause the breakage of part of the bridge oxygen bonds and form Si- O non-bridging oxygen bonds as well as network voids exist out of the network such as Li + , Na + , K + and free O 2- . If the number of non-bridging oxygen bonds is too large, the skeleton of the glass network will be loosened, which will lead to a series of performance deterioration. In order to minimize the damage to the integrity and symmetry of the [SiO 4 ] tetrahedron, ideally, there should be at most one non-bridging oxygen bond in the damaged [SiO 4 ] tetrahedron (see Figure 2), then this When Si:O=1:2.5 (molar ratio) in the tetrahedron. Therefore, when designing the chemical composition ratio of the glass, in order to minimize the damage of non-bridging oxygen, the number of oxygen ions in the glass network must be controlled, so the molar amount of the glass network generator Si 4+ and the intermediate Al 3+ The sum and the molar amount of O 2- provided by all oxides satisfy the following inequality:
1:2<(Si+Al):O<1:2.51:2<(Si+Al):O<1:2.5
该公式则通过各组分的配比实现。This formula is realized by the ratio of each component.
实施例一Example 1
采用以下重量份数的原料制备:Prepared using the following raw materials in parts by weight:
制备过程为:The preparation process is:
采用如图16所示的熔制曲线:将原料均匀混合并对原料进行加热,使原料在150~180min内升温至800~900℃,生产气体以及不透明烧结物;Using the melting curve shown in Figure 16: uniformly mix the raw materials and heat the raw materials, so that the raw materials are heated to 800-900 °C within 150-180 minutes, and gas and opaque sintered products are produced;
继续对原料进行加热,使原料在70~100min内升温至1200~1250℃,烧结物开始熔融并逐渐透明;Continue to heat the raw materials, so that the raw materials are heated to 1200-1250 ° C within 70-100 minutes, and the sintered material begins to melt and gradually becomes transparent;
继续对原料进行加热,使原料在30min~70min升温至1400~1500℃,玻璃液粘度降低,同时释放气态杂质,使玻璃液澄清;Continue to heat the raw materials, so that the raw materials are heated to 1400-1500 ° C in 30min-70min, the viscosity of the glass liquid is reduced, and gaseous impurities are released at the same time, so that the glass liquid is clarified;
玻璃液在1400~1500℃的温度下保温100~200min,使各组分均匀分布;The glass liquid is kept at a temperature of 1400-1500 ℃ for 100-200 minutes, so that the components are evenly distributed;
在30~70min内将玻璃液降温150~250℃,然后在20~50min内将玻璃液骤冷至200~300℃,得到玻璃。The glass liquid is cooled by 150-250° C. within 30-70 minutes, and then the glass liquid is quenched to 200-300° C. within 20-50 minutes to obtain glass.
退火,采用如图17所示的退火曲线:退火炉的初始温度为470~500℃,然后以0.11℃/min~0.143℃/min的速度将温度降低至180~220℃,最后在500至800min内冷却至室温。Annealing, using the annealing curve shown in Figure 17: the initial temperature of the annealing furnace is 470 ~ 500 ° C, and then the temperature is reduced to 180 ~ 220 ° C at a speed of 0.11 ° C / min ~ 0.143 ° C / min, and finally at 500 ~ 800min Cool to room temperature inside.
对制得的Li-Al-Si光敏玻璃取样,将样品两侧分别涂上直径为6mm的均匀厚度圆形电极然后放入烘箱烘干,然后放入高温介电测试仪,测试程序为:测试电压为1V,测试频率为1GHz,温度范围从25℃~300℃,升温速度为4℃/min,温度偏差为±0.30℃。从而测得特定频率下介电常数和介电损耗随温度的变化关系。The prepared Li-Al-Si photosensitive glass was sampled, and the two sides of the sample were coated with circular electrodes with a uniform thickness of 6 mm, then placed in an oven to dry, and then placed in a high-temperature dielectric tester. The test procedure is: test The voltage is 1V, the test frequency is 1GHz, the temperature range is from 25°C to 300°C, the heating rate is 4°C/min, and the temperature deviation is ±0.30°C. Thus, the relationship between dielectric constant and dielectric loss with temperature at a specific frequency is measured.
采用SANSCMT-6104抗弯测试仪、三点弯曲加载法测试4mm×4mm×50mm条状玻璃样品的抗弯强度,测量样品的维氏硬度和膨胀系数。SANSCMT-6104 bending tester and three-point bending loading method were used to test the bending strength of 4mm×4mm×50mm strip glass samples, and measure the Vickers hardness and expansion coefficient of the samples.
测试结果与现有肖特公司的Foturan光敏玻璃对比如下表所示:The test results compared with the existing SCHOTT Foturan photosensitive glass are shown in the following table:
可见,本发明制得的Li-Al-Si光敏玻璃机械性能优于肖特公司的Foturan光敏玻璃,介电损耗远远低于肖特公司的Foturan光敏玻璃,整体性能得到了较大的提升,能够在高频环境下的应用。此外,由于机械性能的提升,能够适应集成电路封装体积小型化的发展潮流。同时有利于改善了国内的转接板材料依赖国外厂商的局面,降低国内三维集成封装的成本,更好地推动国内集成电路的发展。It can be seen that the mechanical properties of the Li-Al-Si photosensitive glass prepared by the present invention are better than the Foturan photosensitive glass of Schott, and the dielectric loss is far lower than the Foturan photosensitive glass of Schott, and the overall performance has been greatly improved. Can be used in high frequency environment. In addition, due to the improvement of mechanical properties, it can adapt to the development trend of miniaturization of integrated circuit packages. At the same time, it is beneficial to improve the situation that domestic adapter board materials rely on foreign manufacturers, reduce the cost of domestic three-dimensional integrated packaging, and better promote the development of domestic integrated circuits.
Claims (8)
- 2. the method for producing a Li-Al-Si photosensitive glass according to claim 1, wherein the alkaline earth metal includes one or more of MgO, CaO, BaO, and SrO.
- 3. The method of producing a Li-Al-Si photosensitive glass according to claim 2, wherein the alkaline earth metal includes MgO and CaO.
- 4. The method of producing a Li-Al-Si photosensitive glass according to claim 3, wherein the alkaline earth metal includes 0.5 parts of CaO and 0.5 parts of MgO.
- 5. The method for producing a Li-Al-Si photosensitive glass according to claim 1, comprising the steps of:uniformly mixing the raw materials and heating the raw materials to raise the temperature of the raw materials to 800-900 ℃ within 150-180 min, so as to produce gas and opaque sinter;continuously heating the raw materials to enable the temperature of the raw materials to rise to 1200-1250 ℃ within 70-100 min, and enabling sinter to start to melt and be gradually transparent;continuously heating the raw materials, heating the raw materials to 1400-1500 ℃ within 30-70 min, reducing the viscosity of the molten glass, and releasing gaseous impurities to clarify the molten glass;the glass liquid is kept warm for 100-200 min at the temperature of 1400-1500 ℃ so that all components are uniformly distributed;cooling the glass liquid within 30-70 min to 150-250 ℃, and then quenching the glass liquid to 200-300 ℃ within 20-50 min to obtain glass;and (6) annealing.
- 6. The method of producing a Li-Al-Si photosensitive glass according to claim 5, wherein the annealing process is:the initial temperature of the annealing furnace is 470-500 ℃, then the temperature is reduced to 180-220 ℃ at the speed of 0.11-0.143 ℃/min, and finally the annealing furnace is cooled to the room temperature within 500-800 min.
- The Li-Al-Si photosensitive glass characterized by being produced by the method for producing a Li-Al-Si photosensitive glass according to any one of claims 1 to 6.
- 8. The Li-Al-Si photosensitive glass according to claim 7, wherein Si in the glass4+、Al3+And O2-The molar amount of (A) satisfies: 1:2<(Si+Al):O<1:2.5。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010654262.5A CN111718120A (en) | 2020-07-09 | 2020-07-09 | Li-Al-Si photosensitive glass and preparation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010654262.5A CN111718120A (en) | 2020-07-09 | 2020-07-09 | Li-Al-Si photosensitive glass and preparation method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
CN111718120A true CN111718120A (en) | 2020-09-29 |
Family
ID=72572111
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010654262.5A Pending CN111718120A (en) | 2020-07-09 | 2020-07-09 | Li-Al-Si photosensitive glass and preparation method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN111718120A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113312852A (en) * | 2021-06-28 | 2021-08-27 | 南京玻璃纤维研究设计院有限公司 | Method for predicting glass dielectric loss based on neural network algorithm |
CN114873918A (en) * | 2022-06-24 | 2022-08-09 | 成都光明光电有限责任公司 | Photosensitive glass material |
WO2022255194A1 (en) * | 2021-06-03 | 2022-12-08 | Agc株式会社 | Circuit board for high frequency devices, and high frequency device |
CN118392919A (en) * | 2024-06-28 | 2024-07-26 | 西安稀有金属材料研究院有限公司 | Sealing material analysis method |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02196048A (en) * | 1989-01-23 | 1990-08-02 | Itochu Shoji Kk | Photosensitive glass |
CN106167355A (en) * | 2015-05-18 | 2016-11-30 | 肖特股份有限公司 | The photosensitive glass of sensitization and production method thereof |
CN106414353A (en) * | 2014-03-20 | 2017-02-15 | 康宁股份有限公司 | Transparent sound absorbing panels |
CN106746606A (en) * | 2017-03-13 | 2017-05-31 | 电子科技大学 | The be sensitized photosensitive glass and production method of a kind of low-dielectric loss |
CN110937805A (en) * | 2019-11-04 | 2020-03-31 | 中国建筑材料科学研究总院有限公司 | Lithium-aluminum-silicon-based glass material capable of photolithography, preparation method and application thereof |
-
2020
- 2020-07-09 CN CN202010654262.5A patent/CN111718120A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02196048A (en) * | 1989-01-23 | 1990-08-02 | Itochu Shoji Kk | Photosensitive glass |
CN106414353A (en) * | 2014-03-20 | 2017-02-15 | 康宁股份有限公司 | Transparent sound absorbing panels |
CN106167355A (en) * | 2015-05-18 | 2016-11-30 | 肖特股份有限公司 | The photosensitive glass of sensitization and production method thereof |
CN106746606A (en) * | 2017-03-13 | 2017-05-31 | 电子科技大学 | The be sensitized photosensitive glass and production method of a kind of low-dielectric loss |
CN110937805A (en) * | 2019-11-04 | 2020-03-31 | 中国建筑材料科学研究总院有限公司 | Lithium-aluminum-silicon-based glass material capable of photolithography, preparation method and application thereof |
Non-Patent Citations (2)
Title |
---|
LEI CHEN,ET AL.: "Enhanced Mechanical Properties of Li2O-Al2O3-SiO2 Photostructurable Glass by SrO Doping", 《JOURNAL OF ELECTRONIC MATERIALS》 * |
田英良等: "《新编玻璃工艺学》", 30 June 2009, 中国轻工业出版社 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022255194A1 (en) * | 2021-06-03 | 2022-12-08 | Agc株式会社 | Circuit board for high frequency devices, and high frequency device |
CN113312852A (en) * | 2021-06-28 | 2021-08-27 | 南京玻璃纤维研究设计院有限公司 | Method for predicting glass dielectric loss based on neural network algorithm |
CN114873918A (en) * | 2022-06-24 | 2022-08-09 | 成都光明光电有限责任公司 | Photosensitive glass material |
CN114873918B (en) * | 2022-06-24 | 2023-08-08 | 成都光明光电有限责任公司 | Photosensitive glass material |
CN118392919A (en) * | 2024-06-28 | 2024-07-26 | 西安稀有金属材料研究院有限公司 | Sealing material analysis method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN111718120A (en) | Li-Al-Si photosensitive glass and preparation method thereof | |
Al-Baradi et al. | Preparation and characteristics of B2O3–SiO2–Bi2O3–TiO2–Y2O3 glasses and glass-ceramics | |
CN113526872B (en) | Glass-ceramic, electronic equipment and preparation method of glass-ceramic | |
JP2021527019A (en) | Glass-ceramic articles and glass-ceramic for electronic device cover plates | |
CN102844857A (en) | Glass substrate for semiconductor device via | |
CN102093031A (en) | Low softening point glass-ceramic series low temperature cofired ceramic material and preparation method thereof | |
Reddy et al. | Sintering and devitrification of glass-powder compacts in the akermanite–gehlenite system | |
CN108658454A (en) | A kind of high aluminium borosilicate glass of low thermal coefficient of expansion alkali-free and preparation method thereof | |
CN116730619B (en) | Low-loss microcrystalline glass material for LTCC (Low temperature Co-fired ceramic) and preparation method thereof | |
CN118026536A (en) | Microcrystalline glass, preparation method thereof, reinforced microcrystalline glass and application | |
Chen et al. | Effect of properties and crystallization behavior of BaO–ZnO–B2O3–SiO2 glass on the electrical conductivity of Cu paste | |
Guo et al. | Design and preparation of BaO–Al2O3–SiO2–B2O3/Quartz LTCC composites with tailored coefficient of thermal expansion | |
Zeng et al. | Effect of CeO2 doping on structural, electrical and mechanical properties of basalt fibers | |
CN115490428A (en) | Transparent glass ceramics with ultrahigh drop strength and preparation method thereof | |
CN113582539B (en) | Aluminosilicate glass and application | |
CN101209901A (en) | Rare earth-doped transparent glass ceramic luminescent material containing semiconductor quantum dots and preparation method thereof | |
CN115772003A (en) | Colorless transparent glass composition, microcrystalline glass and preparation method thereof | |
CN117164230A (en) | Composition for glass substrate, high-generation alkali-free glass substrate, preparation method and application thereof | |
WO2022054694A1 (en) | Glass, and method for measuring dielectric properties using same | |
CN100445226C (en) | Formulation and preparation method of a glass-ceramic substrate material | |
Li et al. | Preparation and optical properties of boron-doped Si-Na-Al-Zn photo-thermal-refractive glass | |
Lin | Effect of CeO2/Ag2O on Etching Ratio and Crystallization Shrinkage of Photosensitive Glass-Ceramics | |
Wang et al. | Investigation of ZnO-B2O3-SiO2 glass and its application for joining AlN ceramic | |
CN114873918B (en) | Photosensitive glass material | |
Li et al. | Effects of the SiO2-B2O3 Ratio on the Structure and Properties of B2O3-ZnO-SiO2-BaO-LiO2-Al2O3-Na2O-CaO parent glass and glass-ceramics |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20200929 |