CN106746606A - The be sensitized photosensitive glass and production method of a kind of low-dielectric loss - Google Patents
The be sensitized photosensitive glass and production method of a kind of low-dielectric loss Download PDFInfo
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- CN106746606A CN106746606A CN201710144943.5A CN201710144943A CN106746606A CN 106746606 A CN106746606 A CN 106746606A CN 201710144943 A CN201710144943 A CN 201710144943A CN 106746606 A CN106746606 A CN 106746606A
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/095—Glass compositions containing silica with 40% to 90% silica, by weight containing rare earths
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C1/00—Ingredients generally applicable to manufacture of glasses, glazes, or vitreous enamels
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
- C03C4/04—Compositions for glass with special properties for photosensitive glass
Abstract
The invention belongs to the be sensitized photosensitive glass and production method in field of glass production technology with low-dielectric loss.Photosensitive glass chemical analysis by weight percentage is:SiO263~72wt%, Li2O 6~12wt%, Na2O 1~5wt%, K2O 3~9wt%, Al2O32~5wt%, ZnO 1~4wt%, Sb2O30.5~0.9wt%.Ce2O30.02~0.06wt%, Ag2O 0.09~0.16wt%, B2O30.5~3wt% of 2~5wt%, BaO 0.5~2wt% or/and CaO, 1~5wt% of MgO.Production method includes:Get the raw materials ready, just with compound, ball milling mixing is founded, and is molded and is made annealing treatment.The dielectric coefficient of the invention photosensitive glass in normal temperature and more than 1MHz is 4.2~5.6, and dielectric loss is 2 × 10‑3~4 × 10‑3.It is high with intensity, the photochemical stability for not being sensitized segment glass body, dielectric coefficient and dielectric loss in high-frequency work are low, work when stability it is high, and the depth-to-width ratio of the glass etching after sensitization is high, the features such as production procedure is easy.
Description
Technical field
The present invention relates to a kind of photosensitive glass production technical field, particularly a kind of be sensitized light with low-dielectric loss
Quick glass and production method.
Background technology
Photosensitive glass is a kind of special functional material, and after specific wavelength ultraviolet light, glass exposure part can be sent out
The third contact of a total solar or lunar eclipse chemically reacts, and heat treatment can form crystallite at a certain temperature after exposure, compared with initial amorphous glass, crystallite portion
Divide and show optics completely different therewith, mechanically and chemically performance;Show as compared with unexposed and heat treatment section, glass
The exposed heat treatment section of glass is easily etched away in some etching solutions, with the etching ratio of unexposed portion up to 20:1 with
On, glass is made the various complex three-dimensional figures that we need such that it is able to the effective method with very simple, optics,
The fields such as medical science, biology, electronics suffer from being widely applied prospect.
Schott AG discloses a kind of Foturan photosensitive glasses, and its formula is SiO275~85%, Li2O, 7~11%,
K2O and Al2O33~6%, Na2O 1~2%, ZnO < 2%, Sb2O30.2~0.4%, Ce2O30.01~0.04%, Ag2O
0.05~0.15 (referring to:1.“F.E.Livingston,P.M.Adams,H.Helvajian,Influence of cerium
on the pulsed UV nanosecond laser processing of photostructurable glass
ceramic materials,Applied Surface Science,”2005,247:526-536;2.
“F.E.livingston,P.M.adams,H.helvajian,Examination of the laser-induced
variations in the chemical etch rate of a photosensitive glass ceramic,
Applied Physics A,”2007,89:97-107).But, such photosensitive glass can be in glass due to there is alkali metal ion
It is mobile in net (bar) line of glass body to produce different structure (phase) body itself vibrations in high frequency in polarization and glass, therefore cause
Glass dielectric constant becomes big, loss increases;Such photosensitive glass after tested, the dielectric in region is not sensitized in normal temperature and 1-100MHz
Coefficient is about 6.5, and dielectric loss is about 6.5 × 10-3And less stable;Thus, such photosensitive glass is difficult to meet in electronics
Application in devices field.
The content of the invention
The purpose of the present invention is directed to the defect of background technology presence, researchs and develops a kind of be sensitized light of low-dielectric loss
Quick glass and production method;Reach intensity, the photochemical stabilization for improving and not being sensitized (unexposed and heat treatment) segment glass body
Property, the stability for not being sensitized vitreum in high-frequency work when dielectric loss, raising work is effectively reduced, to meet in electronics device
Part is applied in field;And the depth-to-width ratio of glass etching after sensitization is effectively improved, simplify the purpose such as production procedure.
Solution of the invention be on the basis of the lithium-aluminium-silicon photosensitive glass such as background technology FOTURAN, for lithium-
Aluminium-silica glass loss is mainly derived from the movement and the vibrations generation polarization of vitreum itself of alkali metal ion under high frequency, so that
Glass dielectric constant is caused to become big, loss increase.The present invention passes through:Add modifying agent BaCO3Or/and CaCO, MgCO3, in glass
Alkaline earth oxide is formed in body, make alkaline-earth metal ions enter vitreum in net (bar) line in, with prevent alkali metal from
The entrance of son, the different structure body vibrations of itself in decrease glass make its dielectric loss in high frequency substantially reduce and in glass
When the overall re-expose, the Crystallizing treatment that are carried out after etching, its thermal coefficient of expansion is reduced, improve the intensity and stabilization of vitreum
Property;Add Sb2O3(antimony oxide) as exposure and the heat treatment of glass reducing agent, it is ensured that it is photochemically reactive to be smoothed out, promote
Enter the growth of silver-colored nucleus and control the size of crystalline silicates;By adding B2O3Substitution part SiO2Both it is beneficial to eliminate bubble, adds
Fast glass clarifying and homogenization process, improve the uniformity of vitreum, thermal coefficient of expansion are reduced, while suitably reducing SiO2Content with
Its photochemical stability is improved, makes not being sensitized in glass etching partly to be less susceptible to be etched, so that it is deep wide to improve glass etching
Than;Improve K2The content of O, Li is separated out to improve glass after heat treatment is exposed2SiO3Ratio, the glass after sensitization is more held
Easily by HF solution etches, the depth-to-width ratio of glass etching is can further improve again.The present invention realizes its goal of the invention with this.Thus
By weight percentage, its chemical analysis is the be sensitized photosensitive glass of low-dielectric loss of the present invention:SiO263~72wt%,
Li2O 6~12wt%, Na2O 1~5wt%, K2O 3~9wt%, Al2O32~5wt%, ZnO 1~4wt%, Sb2O3 0.5
~0.9wt%.Ce2O30.02~0.06wt%, Ag2O 0.09~0.16wt%, B2O30.5~2wt% of 2~5wt%, BaO
Or/and 0.5~3wt% of CaO, 1~5wt% of MgO (total amount is 100%).
The production method of the be sensitized photosensitive glass of above-mentioned low-dielectric loss includes:
A. get the raw materials ready:Based on the percentage by weight of raw material total amount, will:SiO250.0~60.0%, Li2CO315.30~
30.60%, NaNO32.77~13.85%, K2CO34.45~13.34%, Al2O32.02~5.05%, ZnO 1.01~
4.04%, Sb2O30.51~0.91%, Ce (NO3)3·6H2O 0.05~0.15%, AgNO30.13~0.23%, B2O3
2.04%~5.10%, BaCO30.65~2.63% or/and CaCO30.91~5.46%, MgCO32.13~10.63% points
Another name amount is stand-by, and each raw material of the above is technical pure and above purity;
B. compound is just matched somebody with somebody:A. step A is weighed into stand-by SiO2、Li2CO3、NaNO3、K2CO3、Al2O3、ZnO、Sb2O3、
B2O3、BaCO3、CaCO3、MgCO3It is well mixed, it is stand-by;
B. stand-by Ce (NO will be weighed3)3·6H2O and AgNO3Also it is well mixed, it is stand-by;
C. ball milling mixing:Step B gained two groups of compounds of a, b are placed in ball mill (tank), wet-milling mixing 18-36 hours
To after uniform, feeding oven drying is processed to moisture content≤3%;
D. found:By through in the powder feeding glass-melting furnace after step C dried process, being melted at a temperature of 1500~1550 DEG C
Be made glass metal, then at a temperature of being not less than 1460 DEG C be incubated 60-120 minute, clarified, homogenizing process;
E. it is molded and makes annealing treatment:Mould molding, cooling will be injected through the glass metal after the clarification of D steps, homogenizing treatment, it is cold
But the glass after is re-fed into being made annealing treatment in annealing furnace, 580~620 DEG C of annealing temperature, slow after constant temperature 90-180 minutes
It is cooled to room temperature;Obtaining chemical analysis by weight percentage is:SiO263~72wt%, Li2O 6~12wt%, Na2O 1~
5wt%, K2O 3~9wt%, Al2O32~5wt%, ZnO 1~4wt%, Sb2O30.5~0.9wt%.Ce2O30.02~
0.06wt%, Ag2O 0.09~0.16wt%, B2O30.5~3wt% of 2~5wt%, BaO 0.5~2wt% or/and CaO,
The be sensitized photosensitive glass of 1~5wt% of MgO.
In above-mentioned raw materials:Ce(NO3)3·6H2O is sensitising agent, AgNO3It is nucleator, Sb2O3It is reducing agent;Ce(NO3)3·
6H2O:AgNO3:Sb2O3=1:1.80~2.20:7.80~8.20.It is slowly cooled to room temperature described in step E, its cooling speed
Spend for≤0.5 DEG C/it is per minute or cool to room temperature with the furnace.
The present invention enters net (bar) line of vitreum in basis of background technology by adding modifying agent, alkaline-earth metal ions
In be filled with network space, prevent the entrance of alkali metal ion, weaken the different structure body vibrations of itself in glass, make its
Dielectric loss substantially reduces and vitreum is improved in overall re-expose, the Crystallizing treatment carried out after glass etching during high frequency
Strength and stability;Add B2O3And suitably reduce SiO2Content improves the uniformity of vitreum, reduces thermal coefficient of expansion simultaneously again
Further reduce the different structure body vibrations of itself in glass;The present invention can be sensitized photosensitive glass in normal temperature and more than 1MHz
Its dielectric coefficient is 4.2~5.6, and dielectric loss is 2 × 10-3~4 × 10-3, its dielectric coefficient and dielectric loss are compared with background technology
There is substantially reduction, and with stability higher;Additionally, founding for glass is not required to carry out under reducing atmosphere.Thus, this hair
It is bright with high, dielectric coefficient of the photosensitive glass in high-frequency work that be not sensitized the intensity of segment glass body, photochemical stability
It is low with dielectric loss, work when stability it is high, and sensitization after glass etching depth-to-width ratio it is high, the spy such as production procedure simplicity
Point.
Specific embodiment
Following embodiment is as a example by preparing 1000g raw material mixed powders and found and can be sensitized photosensitive glass:
Embodiment 1
A. get the raw materials ready:Will:Purity is 99% SiO2570.39g, purity is 97% Li2CO3208.66g, purity is
99% NaNO345.36g, purity is 99% K2CO372.79g, purity is 99% Al2O333.08g, purity is 99%
ZnO 24.79g, purity is 98% BaCO310.75g, purity is 98% B2O325.06g, purity is 99% reduction
Agent Sb2O36.61g, sensitising agent Ce (NO3)3·6H2O 0.83g, purity is 98% nucleator AgNO31.68g is weighed respectively
It is stand-by;
B, just match somebody with somebody compound:A. stand-by SiO will be weighed2、Li2CO3、NaNO3、K2CO3、Al2O3、ZnO、BaCO3、B2O3、
Sb2O3, it is well mixed, it is stand-by;
B. stand-by Ce (NO will be weighed3)3·6H2O、AgNO3Also it is well mixed, it is stand-by;
C, ball milling mixing:Step B gained two groups of compounds of a, b are placed in ball grinder, after wet-milling mixes 24 hours, feeding
Dried to moisture content≤3% in case;
D, found:In powder feeding glass-melting furnace after being dried through step C, glass is melting at a temperature of 1520 ± 10 DEG C
Glass liquid, then at a temperature of being not less than 1460 DEG C be incubated 90 minutes, clarified with to glass metal, homogenizing treatment;
E. it is molded and makes annealing treatment:Mould molding, cooling will be injected through the glass metal after the clarification of D steps, homogenizing treatment, it is cold
But the glass after is re-fed into being made annealing treatment in annealing furnace, and 600 DEG C of annealing temperature, constant temperature cool to room with the furnace after 120 minutes
Temperature;Obtain 800.81g by weight percentage, chemical analysis is:SiO270.11%, Li2O 9.99%, Na2O 1.91%, K2O
5.98%, Al2O34.16%, ZnO 3.02%, BaO 1.01%, B2O32.93%, Sb2O30.72%, Ce2O30.04%,
Ag2The be sensitized photosensitive glass of O 0.13%.
It is that 320nm ultraviolet photoetchings and normative heat treatment (are sensitized that the present embodiment gained can be sensitized photosensitive glass through wavelength
Treatment) after, the latent image of the silicate crystal in vitreum is clearly visible.
After tested:This can be sensitized photosensitive glass (not being sensitized region) in normal temperature and more than 1MHz, and its dielectric coefficient is 4.2
~5.6, dielectric loss is 2 × 10-3~4 × 10-3, its dielectric coefficient and dielectric loss corresponding compared with background technology 6.5 and 6.5
×10-3There is substantially reduction, and with stability higher
Embodiment 2
A. get the raw materials ready:Will:Purity is 99% SiO2548.18g, purity is 97% Li2CO3223.81g, purity is
99% NaNO355.25g, purity is 99% K2CO388.67g, purity is 99% Al2O320.19g, purity is 99%
ZnO 16.12g, purity is 98% CaCO314.50g, purity is 98% B2O324.40g, purity is 99% reduction
Agent Sb2O36.45g, sensitising agent Ce (NO3)3·6H2O 0.80g, purity is 98% nucleator AgNO31.63g is weighed respectively
It is stand-by;
B, just match somebody with somebody compound:A. stand-by SiO will be weighed2、Li2CO3、NaNO3、K2CO3、Al2O3、ZnO、CaCO3、B2O3、
Sb2O3, it is well mixed, it is stand-by;
B. stand-by Ce (NO will be weighed3)3·6H2O、AgNO3Also it is well mixed, it is stand-by;
C, ball milling mixing:Step B gained two groups of compounds of a, b are placed in ball grinder, wet-milling mixes 24 hours to uniform
After mixing, feeding drying in oven to moisture content≤3%;
D, found:In powder feeding glass-melting furnace after being dried through step C, glass is melting at a temperature of 1540 ± 10 DEG C
Glass liquid, then at a temperature of 1480 DEG C be incubated 90 minutes, clarified with to glass metal, homogenizing treatment;
E. it is molded and makes annealing treatment:Mould molding, cooling will be injected through the glass metal after the clarification of D steps, homogenizing treatment, it is cold
But the glass after is re-fed into annealing furnace at a temperature of 600 DEG C, constant temperature is made annealing treatment for 120 minutes, is then cooled to the furnace
Room temperature;Obtain 776.78g by weight percentage, chemical analysis is:SiO269.56%, Li2O 11.06%, Na2O 2.42%,
K2O 7.48%, Al2O32.59%, ZnO 2.04%, CaO 1.01%, B2O32.93%, Sb2O30.74%, Ce2O3
0.04%, Ag2The be sensitized photosensitive glass of O 0.13%.
Embodiment 3
A. get the raw materials ready:Will:Purity is 99% SiO2536.29g, purity is 97% Li2CO3205.05g, purity is
99% NaNO350.11g, purity is 99% K2CO380.46g, purity is 99% Al2O330.43g, purity is 99%
ZnO 16.21g, purity is 98% BaCO310.53g, purity is 98% CaCO329.26g, purity is 98%
B2O332.76g, purity is 99% reducing agent Sb2O36.46g, sensitising agent Ce (NO3)3·6H2O 0.80g, purity is 98%
Nucleator AgNO31.64g weighs stand-by respectively;
B, just match somebody with somebody compound:A. stand-by SiO will be weighed2、Li2CO3、NaNO3、K2CO3、Al2O3、ZnO、Sb2O3、B2O3、
BaCO3、CaCO3It is well mixed, it is stand-by;
B. stand-by Ce (NO will be weighed3)3·6H2O、AgNO3Also it is well mixed, it is stand-by;
C, ball milling mixing:Step B is placed in ball grinder by a, b two groups of compounds of gained, wet-milling mixes 24 hours to equal
After even mixing, feeding oven for drying to moisture content≤3%;
D, found:In compound feeding glass-melting furnace after being dried through step C, glass is melting at a temperature of 1510 ± 10 DEG C
Glass liquid, then at a temperature of being not less than 1460 DEG C be incubated 90 minutes, clarified with to glass metal, homogenizing treatment;
E. it is molded and makes annealing treatment:Mould molding, cooling will be injected through the glass metal after the clarification of D steps, homogenizing treatment, it is cold
But the glass after is re-fed into being made annealing treatment in annealing furnace, and 600 DEG C of annealing temperature, constant temperature cool to room with the furnace after 120 minutes
Temperature;By weight percentage, chemical analysis is prepared 785.07g:SiO267.34%, Li2O 10.01%, Na2O 2.17%,
K2O 6.71%, Al2O33.87%, ZnO 2.02%, BaO 1.01%, CaO 2.03%, B2O33.93%, Sb2O3
0.74%, Ce2O30.04%, Ag2The be sensitized photosensitive glass of O 0.13%.
Claims (4)
1. a kind of be sensitized photosensitive glass of low-dielectric loss, it is characterised in that by weight percentage, its chemical analysis is:
SiO263~72wt%, Li2O 6~12wt%, Na2O 1~5wt%, K2O 3~9wt%, Al2O32~5wt%, ZnO 1
~4wt%, Sb2O30.5~0.9wt%.Ce2O30.02~0.06wt%, Ag2O 0.09~0.16wt%, B2O32~
0.5~3wt% of 5wt%, BaO 0.5~2wt% or/and CaO, 1~5wt% of MgO.
2. by the production method that photosensitive glass can be sensitized described in sharp requirement 1, including:
A. get the raw materials ready:Based on the percentage by weight of raw material total amount, will:SiO250.0~60.0%, Li2CO315.30~
30.60%, NaNO32.77~13.85%, K2CO34.45~13.34%, Al2O32.02~5.05%, ZnO 1.01~
4.04%, Sb2O30.51~0.91%, Ce (NO3)3·6H2O 0.05~0.15%, AgNO30.13~0.23%, B2O3
2.04%~5.10%, BaCO30.65~2.63% or/and CaCO30.91~5.46%, MgCO32.13~10.63% points
Another name amount is stand-by, and each raw material of the above is technical pure and above purity;
B. compound is just matched somebody with somebody:A. step A is weighed into stand-by SiO2、Li2CO3、NaNO3、K2CO3、Al2O3、ZnO、Sb2O3、B2O3、
BaCO3、CaCO3、MgCO3It is well mixed, it is stand-by;
B. stand-by Ce (NO will be weighed3)3·6H2O and AgNO3Also it is well mixed, it is stand-by;
C. ball milling mixing:Step B gained two groups of compounds of a, b are placed in ball mill, wet-milling mixing 18-36 hours is to uniform
Afterwards, feeding oven drying is processed to moisture content≤3%;
D. found:By through in the powder feeding glass-melting furnace after step C dried process, being melting at a temperature of 1500~1550 DEG C
Glass metal, then at a temperature of being not less than 1460 DEG C be incubated 60-120 minute, clarified, homogenizing process;
E. it is molded and makes annealing treatment:Mould molding, cooling will be injected through the glass metal after the clarification of D steps, homogenizing treatment, after cooling
Glass be re-fed into being made annealing treatment in annealing furnace, 580~620 DEG C of annealing temperature, Slow cooling after constant temperature 90-180 minutes
To room temperature;Obtaining chemical analysis by weight percentage is:SiO263~72wt%, Li2O 6~12wt%, Na2O 1~
5wt%, K2O 3~9wt%, Al2O32~5wt%, ZnO 1~4wt%, Sb2O30.5~0.9wt%.Ce2O30.02~
0.06wt%, Ag2O 0.09~0.16wt%, B2O30.5~3wt% of 2~5wt%, BaO 0.5~2wt% or/and CaO,
The be sensitized photosensitive glass of 1~5wt% of MgO.
3. by the production method that photosensitive glass can be sensitized described in sharp requirement 2, it is characterised in that the Ce (NO3)3·6H2O is light
Quick dose, AgNO3It is nucleator, Sb2O3It is reducing agent;Ce(NO3)3·6H2O:AgNO3:Sb2O3=1:1.80~2.20:7.80~
8.20。
4. by the production method that photosensitive glass can be sensitized described in sharp requirement 2, it is characterised in that the Slow cooling described in step E
To room temperature, its cooling velocity is≤0.5 DEG C/it is per minute or cool to room temperature with the furnace.
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108975689A (en) * | 2018-09-03 | 2018-12-11 | 中建材蚌埠玻璃工业设计研究院有限公司 | A kind of low-k low dielectric-loss glass |
CN109896729A (en) * | 2017-12-07 | 2019-06-18 | 南昌欧菲光学技术有限公司 | Glass cover-plate and preparation method thereof and touch screen |
CN110407466A (en) * | 2019-06-17 | 2019-11-05 | 江苏双兴工贸有限公司 | A kind of formula and its manufacturing method of Full-color photosensitive glass vessel |
CN110790504A (en) * | 2019-11-16 | 2020-02-14 | 中建材蚌埠玻璃工业设计研究院有限公司 | Low-dielectric-constant glass batch |
CN110937805A (en) * | 2019-11-04 | 2020-03-31 | 中国建筑材料科学研究总院有限公司 | Photoetching lithium-aluminum-silicon glass material and preparation method and application thereof |
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CN114933416A (en) * | 2022-06-24 | 2022-08-23 | 成都光明光电有限责任公司 | Photosensitive glass-ceramic |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104003616A (en) * | 2014-05-23 | 2014-08-27 | 杭州诺贝尔集团有限公司 | Method for preparing photochromic glass |
CN104261673A (en) * | 2014-09-03 | 2015-01-07 | 石以瑄 | Electron-sensitive glass substrate as well as optical circuit and micro structure formed in electron-sensitive glass substrate |
-
2017
- 2017-03-13 CN CN201710144943.5A patent/CN106746606A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104003616A (en) * | 2014-05-23 | 2014-08-27 | 杭州诺贝尔集团有限公司 | Method for preparing photochromic glass |
CN104261673A (en) * | 2014-09-03 | 2015-01-07 | 石以瑄 | Electron-sensitive glass substrate as well as optical circuit and micro structure formed in electron-sensitive glass substrate |
Non-Patent Citations (2)
Title |
---|
T.R. DIETRICH, W. EHRFELD, M. LACHER, M. KRÄMER, B. SPEIT: "Fabrication technologies for microsystems utilizing photoetchable glass", 《MICROELECTRONIC ENGINEERING》 * |
赵彦钊: "《玻璃工艺学》", 31 July 2006, 化学工业出版社 * |
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CN108975689A (en) * | 2018-09-03 | 2018-12-11 | 中建材蚌埠玻璃工业设计研究院有限公司 | A kind of low-k low dielectric-loss glass |
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