CN111696897B - Semiconductor processing equipment - Google Patents
Semiconductor processing equipment Download PDFInfo
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- CN111696897B CN111696897B CN202010535344.8A CN202010535344A CN111696897B CN 111696897 B CN111696897 B CN 111696897B CN 202010535344 A CN202010535344 A CN 202010535344A CN 111696897 B CN111696897 B CN 111696897B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides semiconductor process equipment, which comprises a process chamber, wherein a base for bearing a substrate and a first heat source component for heating the base are arranged in the process chamber, a second heat source component is also arranged in the process chamber, the first heat source component is arranged around the second heat source component, the second heat source component comprises a driving mechanism and a second heat source, and the second heat source is used for heating the base; the driving mechanism is connected with the second heat source and is used for driving the second heat source to move so as to adjust the area of the base heated by the second heat source. The semiconductor process equipment provided by the invention can improve the flexibility of temperature control of the base, so that the temperature uniformity of the base is improved, the resistivity value and the resistivity uniformity of a substrate deposition layer are further improved, the service life of a heat source component is prolonged, and the use cost is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to semiconductor process equipment.
Background
Currently, with the development of the semiconductor industry, the requirements on resistivity value and uniformity of resistivity of a Wafer (Wafer) deposition layer are increasing in the process index of a silicon epitaxial device. In silicon epitaxy equipment, the uniformity of heating of the tray for carrying the wafers during the process may affect the resistivity value and resistivity uniformity of the deposited layers of the wafers to some extent.
In existing silicon epitaxial equipment, a heating module is typically disposed above and below each of the trays used to carry the wafers. The heating module comprises an annular reflecting screen and a plurality of infrared lamps, wherein the plurality of infrared lamps are arranged on the annular reflecting screen along the circumferential interval of the annular reflecting screen, and light emitted by the plurality of infrared lamps is directly irradiated on the tray through the reflection of the annular reflecting screen so as to heat the tray. The infrared lamps are divided into inner zone lamps and outer zone lamps at intervals, and a plurality of grooves with different reflection angles are formed in the annular reflecting screen so as to reflect light emitted by the inner zone lamps to the circular part at the center of the tray and reflect light emitted by the outer zone lamps to the annular part at the edge of the tray, thereby heating the whole tray. In the process, the power of the inner area lamp and the power of the outer area lamp are adjusted to realize the temperature rise and control of the tray.
However, since the reflection angle of the groove is fixed, there is still a region with more reflected light and less reflected light on the tray, so that the tray cannot be heated uniformly over the whole area. In addition, because all the inner zone lamps and/or all the outer zone lamps can be adjusted at the same time, the temperature of a certain area with overhigh or overlow temperature on the tray cannot be adjusted, and in addition, the power of a certain infrared lamp in the inner zone lamps and/or the outer zone lamps can reach full load, the service life of the infrared lamp is reduced, and the use cost is increased.
Disclosure of Invention
The invention aims at solving at least one of the technical problems in the prior art, and provides a semiconductor process device which can improve the flexibility of temperature control of a base, so as to improve the temperature uniformity of the base, further improve the resistivity value and the resistivity uniformity of a substrate deposition layer, further improve the service life of a heat source component and reduce the use cost.
In order to achieve the object of the invention, a semiconductor process apparatus is provided, comprising a process chamber, wherein a susceptor for carrying a substrate is arranged in the process chamber, a first heat source assembly for heating the susceptor is arranged in the process chamber, a second heat source assembly is arranged in the process chamber, the first heat source assembly is arranged around the second heat source assembly, the second heat source assembly comprises a driving mechanism and a second heat source, wherein,
the second heat source is used for heating the base;
the driving mechanism is connected with the second heat source and is used for driving the second heat source to move so as to adjust the area of the base heated by the second heat source.
Preferably, the driving mechanism includes a rotary driving source, and the rotary driving source is connected with the second heat source and is used for driving the second heat source assembly to rotate, so as to adjust the region of the base heated by the second heat source along the radial direction of the base.
Preferably, the heat source device comprises a plurality of second heat source assemblies, and the plurality of second heat source assemblies are distributed at intervals along the circumferential direction of the base.
Preferably, the second heat source includes a heat source body for heating the susceptor and a connection structure for connecting the driving mechanism and the heat source body.
Preferably, the heat source main body comprises a heating lamp, a radiating fin and a connector, the connecting structure comprises an elastic jacket, a fastening piece and a connecting sleeve, wherein,
the elastic clamping sleeve is sleeved on the connecting head, the fastening piece is arranged on the elastic clamping sleeve in a penetrating mode and used for adjusting the elastic shrinkage degree of the elastic clamping sleeve to enable the elastic clamping sleeve to clamp the connecting head, one end of the connecting sleeve is connected with the elastic clamping sleeve, and the other end of the connecting sleeve is sleeved on a driving shaft of the driving mechanism.
Preferably, the connecting sleeve is in threaded fit connection with the driving shaft;
the connecting structure further comprises a connecting jackscrew, and the connecting jackscrew is used for fixedly connecting the connecting sleeve and the driving shaft.
Preferably, the connecting structure further comprises a spring positioning pin, and the connecting sleeve is connected with the elastic jacket through the spring positioning pin.
Preferably, the first heat source assembly includes: the annular lamp holder is arranged on the base, and the annular reflecting screen is used for reflecting heat generated by the plurality of first heat sources to the base.
Preferably, a temperature measuring thermocouple is arranged in the base;
the semiconductor process apparatus further includes: and the controller is connected with the temperature measuring thermocouple and the second heat source component and is used for calculating the temperature uniformity value of the base according to the temperature value detected by the temperature measuring thermocouple and adjusting the area of the base heated by the second heat source until the temperature uniformity value is smaller than the preset threshold value when the temperature uniformity value is larger than the preset threshold value.
Preferably, the controller is further configured to adjust the area of the susceptor heated by the second heat source according to a control command input by a user.
The invention has the following beneficial effects:
according to the semiconductor process equipment provided by the invention, the second heat source assembly is used for driving the second heat source to move through the driving mechanism when the temperature of the base is uneven, so that the area of the base heated by the second heat source is regulated, the temperature of the base is uniform, and the temperature uniformity of the base is improved. The semiconductor process equipment provided by the invention can improve the flexibility of temperature control of the base, so that the temperature uniformity of the base is improved, and the resistivity value and the resistivity uniformity of the substrate deposition layer are further improved. And the driving mechanism drives the second heat source to move, so that the condition that the first heat source component and the second heat source are fully loaded can be avoided, the service lives of the first heat source component and the second heat source component can be prolonged, and the use cost is reduced.
Drawings
FIG. 1 is a schematic diagram of a second heat source assembly in a semiconductor processing apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic top view of a second heat source assembly of a semiconductor processing apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic view of a susceptor and a region of the susceptor heated by a second heat source in a semiconductor processing apparatus according to an embodiment of the present invention;
FIG. 4 is a schematic view of a susceptor in a semiconductor processing apparatus according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a controller in a semiconductor processing apparatus according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of the components of a second heat source assembly in a semiconductor processing apparatus according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of a connection structure in a semiconductor processing apparatus according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of a first heat source assembly in a semiconductor processing apparatus according to an embodiment of the present invention;
reference numerals illustrate:
1-an annular reflective screen; 2-a driving mechanism; 21-a rotary drive source; 22-a positioning module; 3-a second heat source; 311-heating lamps; 312-connectors; 313-heat sink; 32-an elastic jacket; 33-a fastener; 34-connecting the sleeve; 35-jackscrews; 36-tooth grooves; 37-spring locator pins; 4-a base; 5-temperature measurement thermocouple; 61-a master control unit; 62-a proportion calculation module; 63-an integral calculation module; a 64-derivative calculation module; 7-a first heat source.
Detailed Description
In order to enable those skilled in the art to better understand the technical scheme of the present invention, the following describes the semiconductor process equipment provided by the present invention in detail with reference to the accompanying drawings.
As shown in fig. 1 to 3, the present embodiment provides a semiconductor processing apparatus, which includes a process chamber, wherein a susceptor 4 for carrying a substrate is disposed in the process chamber, a first heat source assembly (not shown in the drawing) for heating the susceptor 4 is disposed in the process chamber, and a second heat source assembly is disposed in the process chamber, the first heat source assembly surrounds the second heat source assembly, the second heat source assembly includes a driving mechanism 2 and a second heat source 3, wherein the second heat source 3 is used for heating the susceptor 4; the driving mechanism 2 is connected to the second heat source 3, and is used for driving the second heat source 3 to move so as to adjust the area of the base 4 heated by the second heat source 3.
The semiconductor processing apparatus provided in this embodiment, by means of the second heat source component, can drive the second heat source 3 to move through the driving mechanism 2 when the temperature of the susceptor 4 is not uniform, and adjust the area of the susceptor 4 heated by the second heat source 3, so that the temperature of the susceptor 4 is uniform. The semiconductor process equipment provided by the embodiment can improve the flexibility of controlling the temperature of the base, so that the temperature uniformity of the base 4 is improved, and the resistivity value and the resistivity uniformity of the substrate deposition layer are further improved. In addition, the driving mechanism 2 drives the second heat source 3 to move, so that the condition that the first heat source assembly and the second heat source 3 are fully loaded can be avoided, the service lives of the first heat source assembly and the second heat source assembly can be prolonged, and the use cost is reduced.
Specifically, when the temperature of a certain area of the susceptor 4 carrying the substrate is lower than that of other areas, the second heat source 3 can be driven by the driving mechanism 2 to move towards the area with lower temperature, so as to adjust the second heat source 3 to heat the area with lower temperature, so that the temperature of the area with lower temperature is increased, and the temperature of the area with lower temperature can be increased to be the same as that of the other areas, thereby the temperature of the whole susceptor 4 is the same, and the temperature uniformity of the susceptor 4 is improved.
Preferably, the heating power of the second heat source 3 to the region with lower temperature can be increased at the same time, so that the temperature of the region with lower temperature can be quickly increased to be the same as the temperature of other regions, thereby improving the efficiency of adjusting the temperature uniformity of the base 4, and further improving the resistivity value and the resistivity uniformity of the substrate deposition layer.
Preferably, the heating power of the first heat source component to the region with lower temperature can be improved at the same time, so that the first heat source component can be matched with the second heat source 3, the efficiency of adjusting the temperature uniformity of the base 4 is improved, the condition that the first heat source component and the second heat source 3 are fully loaded is avoided, or the time for fully loading the first heat source component and the second heat source 3 is shortened, the service life of the heat source component is prolonged, and the use cost is reduced.
Correspondingly, when the temperature of a certain area of the substrate carried by the susceptor 4 is higher than that of other areas, if the second heat source 3 is heating the area, the second heat source 3 can be driven by the driving mechanism 2 to leave from the area with higher temperature so as to heat other areas with lower temperature, thereby making the temperature of the whole susceptor 4 the same and improving the temperature uniformity of the susceptor 4.
When the overall temperature of the susceptor 4 has reached the set value and the temperature of a certain region is higher than the temperature of other regions, if the second heat source 3 is heating the region, the heating power of the second heat source 3 to the region with higher temperature is reduced, or the second heat source 3 is turned off, so that the temperature of the region with higher temperature can be quickly reduced to be the same as the temperature of the other regions, thereby improving the efficiency of adjusting the temperature uniformity of the susceptor 4 and further improving the resistivity value and the resistivity uniformity of the substrate deposition layer.
And, the heating power of the first heat source assembly to the region with higher temperature can be reduced simultaneously, so that the first heat source assembly can be matched with the second heat source 3, and the efficiency of adjusting the temperature uniformity of the base 4 is improved.
As shown in fig. 8, in a preferred embodiment of the present invention, the first heat source assembly may include: the heat source device comprises a plurality of first heat sources 7, an annular lamp holder (not shown in the figure), and an annular reflecting screen 1, wherein the plurality of first heat sources 7 are arranged on the annular lamp holder, and the annular reflecting screen 1 is used for reflecting heat generated by the plurality of first heat sources 7 to a base 4. The first heat source 7 may employ a heating lamp capable of generating heat, such as an infrared heating lamp, and direct irradiation of the infrared heating lamp, and a reflection surface of the annular reflection screen 1 reflect light generated by the infrared heating lamp onto the susceptor 4 to heat the susceptor 4.
As shown in fig. 1 and 2, alternatively, a second heat source assembly may be disposed on the annular reflecting screen 1, specifically, the first heat source assembly is disposed on the reflecting surface of the annular reflecting screen 1, the driving mechanism 2 may be disposed on the other side surface of the annular reflecting screen 1 facing away from the reflecting surface, and the second heat source 3 in the second heat source assembly may be accommodated in a hollow area in the center of the annular reflecting screen 1 or below the hollow area, and the susceptor 4 is heated by the hollow area. The driving mechanism 2 and the second heat source 3 are arranged on the other side surface of the annular reflecting screen 1, which is away from the reflecting surface, so that interference between the second heat source 3 and the first heat source 7 in the process of driving the second heat source 3 by the driving mechanism 2 can be avoided, and the use stability of the first heat source component and the second heat source component is improved. However, in practical applications, the arrangement of the first heat source assembly and the second heat source assembly is not limited thereto.
As shown in fig. 1, 2 and 5, in a preferred embodiment of the present invention, the driving mechanism 2 includes a rotary driving source 21, and the rotary driving source 21 is connected to the second heat source 3 for driving the second heat source 3 to rotate, and adjusts the area of the susceptor 4 heated by the second heat source 3 in the radial direction of the susceptor 4 (as shown by a black line area a in fig. 3).
Specifically, when the rotation driving source 21 drives the second heat source 3 to rotate, the second heat source 3 may be rotated along the radial direction of the susceptor 4, so that the region heated by the second heat source 3 moves along the radial direction of the susceptor 4, and the region heated by the second heat source 3 may be adjusted. However, the type of the driving mechanism 2 is not limited to this, and a linear driving source may be used to connect the linear driving source to the second heat source 3, and the linear driving source may be used to drive the second heat source 3 to move in the radial direction of the susceptor 4, or the region heated by the second heat source 3 may be moved in the radial direction of the susceptor 4, so that the region heated by the second heat source 3 may be adjusted.
Alternatively, the rotary drive source 21 may employ a servo motor.
Optionally, a positioning module 22 is disposed in the driving mechanism 2, and the positioning module 22 is used for positioning the rotation angle of the rotation driving source 21. By positioning the rotation angle of the rotation driving source 21 by the positioning module 22, the region of the susceptor 4 heated by the second heat source 3 can be determined, so that the accuracy of temperature adjustment of the susceptor 4 can be improved.
Alternatively, the positioning module 22 may employ an absolute value encoder.
Alternatively, the positioning accuracy of the positioning module 22 may be 0.036 °/step.
As shown in fig. 1 and 2, in the present embodiment, the semiconductor process apparatus includes a plurality of second heat source modules which are spaced apart along the circumferential direction of the susceptor 4. By providing a plurality of second heat source assemblies, different areas of the susceptor 4 can be heated by using the second heat sources 3 in the second heat source assemblies positioned at different positions, and the second heat sources 3 connected with the second heat source assemblies are driven to move by using the driving mechanism 2 in each second heat source assembly so as to adjust the heated areas of the second heat sources 3 in the second heat source assemblies, thereby further improving the flexibility of temperature control of the susceptor 4.
Optionally, four second heat source assemblies are distributed at intervals along the circumferential direction of the mounting disc, four areas of the base 4 can be heated respectively through the four second heat source assemblies, and when the driving mechanism 2 in each second heat source assembly drives the second heat source 3 connected with the driving mechanism to move, the four second heat sources 3 move in the corresponding areas of the base 4 respectively so as to adjust the areas in the corresponding areas of the base 4 heated by the second heat source 3.
Preferably, the plurality of second heat source assemblies are uniformly spaced apart along the circumference of the susceptor 4 to improve uniformity of temperature control of the susceptor 4.
As shown in fig. 6 and 7, in the present embodiment, the second heat source 3 may include a heat source body for heating the susceptor 4 and a connection structure for connecting the driving mechanism 2 and the heat source body.
In this embodiment, the heat source main body includes a heating lamp 311, a heat sink 313, and a connector 312, the connection structure includes an elastic jacket 32, a fastener 33, and a connection sleeve 34, where the elastic jacket 32 is sleeved on the connector 312, the fastener 33 is threaded on the elastic jacket 32, and is used to adjust the degree of elastic shrinkage of the elastic jacket 32, so that the elastic jacket 32 clamps the connector 312, one end of the connection sleeve 34 is connected with the elastic jacket 32, and the other end is sleeved on the driving shaft of the driving mechanism 2.
Alternatively, the fastener 33 may be a screw-fit bolt and nut assembly, a through hole through which the bolt passes is provided on the elastic collet 32, the bolt passes through the through hole and is screw-fit with the nut, and the length of the bolt screwed into the nut is adjusted, so that the degree of elastic shrinkage of the elastic collet 32 is increased as the length of the bolt screwed into the nut is increased, the degree of elastic shrinkage of the elastic collet 32 is increased, the degree of elastic collet 32 clamping the connector 312 is increased, the length of the bolt screwed into the nut is shortened, the degree of elastic shrinkage of the elastic collet 32 is decreased, and the degree of elastic collet 32 clamping the connector 312 is loosened.
Alternatively, the heating lamp 311 may be a halogen lamp, and a heat sink 313 may be provided on the halogen lamp to avoid the excessive temperature of the halogen lamp, thereby improving the service life of the halogen lamp.
In this embodiment, the coupling sleeve 34 may be threadably coupled to the drive shaft; the connection structure may further comprise a connection jackscrew 35 for a fixed connection of the connection sleeve 34 with the drive shaft.
Specifically, an internal thread is arranged in one end of the connecting sleeve 34, which is connected with the driving shaft, an external thread which is in threaded fit with the internal thread is arranged on the driving shaft, the connecting sleeve 34 is in threaded fit connection with the driving shaft through the internal thread and the external thread, a threaded hole which is in threaded fit with the jackscrew 35 is arranged on the wall of the connecting sleeve 34, the jackscrew 35 can pass through the wall of the connecting sleeve 34 in threaded fit with the threaded hole and is propped against the driving shaft, so that the connecting sleeve 34 is fixedly connected with the driving shaft, the relative movement of the connecting sleeve 34 and the driving shaft is avoided, the accuracy of the driving mechanism 2 for driving the second heat source to move is influenced, and the accuracy of the heating base of the second heat source is improved.
Optionally, a spline may be provided on the drive shaft to enable the jackscrew 35 to be inserted into the spline 36, thereby improving the stability of the jackscrew 35 to the fixed connection of the connecting sleeve 34 to the drive shaft.
In a preferred embodiment of the present invention, the connection structure may further include a spring positioning pin 37, and the connection sleeve 34 is connected to the elastic collet 32 through the spring positioning pin 37.
Specifically, the spring positioning pin 37 is disposed on the peripheral wall of the elastic collet 32, a through hole through which the spring positioning pin 37 passes is disposed on the wall of the connecting sleeve 34, the spring positioning pin 37 has elasticity, when the connecting sleeve 34 is separated from the elastic collet 32, the spring positioning pin 37 is in a sprung state under no external force, when the connecting sleeve 34 needs to be connected with the elastic collet 32, the elastic collet 32 is inserted into the connecting sleeve 34, the spring positioning pin 37 is in a pressed state under the pressing of the inner wall of the connecting sleeve 34, and as the elastic collet 32 goes deep into the connecting sleeve 34, when the spring positioning pin 37 corresponds to the through hole disposed on the wall of the connecting sleeve 34, the spring positioning pin 37 is sprung and is sprung from the through hole, thereby connecting the connecting sleeve 34 with the elastic collet 32.
As shown in fig. 3 to 5, in a preferred embodiment of the present invention, a thermocouple 5 for measuring temperature is provided in the base 4; the semiconductor process equipment provided by the embodiment can further comprise: the controller is connected with the temperature measuring thermocouple 5 and the second heat source component, and is used for calculating the temperature uniformity value of the base 4 according to the temperature value detected by the temperature measuring thermocouple 5, and adjusting the area of the base 4 heated by the second heat source 3 until the temperature uniformity value is smaller than a preset threshold value when the temperature uniformity value is larger than the preset threshold value.
In this embodiment, the controller may also be used to adjust the area of the susceptor 4 heated by the second heat source 3 according to a control instruction input by a user.
Specifically, the driving mechanism 2 drives the second heat source 3 to move, so as to adjust the area of the base 4 heated by the second heat source 3, which can be adjusted in a manual mode or an automatic mode. When the manual mode is adopted for adjustment, the temperature uniformity value of the base 4 can be calculated according to the process result data of the substrate and the temperature value fed back by the temperature measuring thermocouple 5 arranged in the base 4 so as to judge the area of the base 4 with uneven temperature, so that the driving mechanism 2 is manually used for driving the second heat source 3 to move so as to adjust the area of the base 4 heated by the second heat source 3, and whether to continue adjustment can be determined by monitoring the temperature value fed back by the temperature measuring thermocouple 5 in real time and combining the process result data of the substrate.
As shown in fig. 5, when the adjustment is performed in the automatic mode, the controller may be used to automatically control the driving mechanism 2 to drive the second heat source 3 to move, so as to adjust the area of the susceptor 4 heated by the second heat source 3. As shown in fig. 5, the controller may alternatively employ a proportional-Integral-derivative control system (PID) control mechanism, which may include a master control unit 61 (which may be implemented based on a PLC), a proportional calculation module 62, an Integral calculation module 63, and a derivative calculation module 64.
Specifically, the temperature measuring thermocouple 5 in the base 4 feeds back the detected temperature value of the base 4 to the main control unit 61, the main control unit 61 calculates the temperature uniformity value of the base 4 according to the temperature value fed back by the temperature measuring thermocouple 5, if the temperature uniformity value is greater than a preset threshold, the main control unit 61 triggers to execute a PID algorithm, that is, controls the proportional calculation module 62, the integral calculation module 63 and the differential calculation module 64 to calculate, and controls the driving mechanism 2 to drive the second heat source 3 to move according to the area, detected by the temperature measuring thermocouple 5, of the base 4, in which the temperature uniformity value of the temperature value fed back by the temperature measuring thermocouple 5 in the base 4 is greater than or equal to the preset threshold, until the main control unit 61 calculates that the temperature uniformity value of the temperature value fed back by the temperature measuring thermocouple 5 in the base 4 is less than or equal to the preset threshold, and then the driving mechanism 2 is stopped, and the temperature uniformity of the base 4 meets the semiconductor process requirement index.
In the following, four thermocouples 5 are disposed in the base 4 in fig. 5, but in practical application, the number of thermocouples 5 in the base 4 is not limited to this. In the semiconductor process, the four temperature measuring thermocouples 5 are respectively used for detecting the temperatures of four different areas of the base 4, and feeding the detected temperature values of the four different areas back to the main control unit 61, and the main control unit 61 calculates the temperature uniformity values of the four areas according to the temperature values of the four different areas after receiving the temperature values of the four different areas.
For example, when the preset threshold value of the temperature uniformity value is 10 ℃, if the temperature uniformity value is greater than 10 ℃, the main control unit 61 triggers to execute the PID algorithm, that is, controls the proportion calculation module 62, the integral calculation module 63 and the differential calculation module 64 to calculate, and determines the second heat source component to be regulated according to the region in the base 4 where the high point and the low point of the temperature of the four regions fed back by the four temperature measurement thermocouples 5 are greater than 10 ℃, for example, if the temperature of one temperature measurement thermocouple 5 fed back by the four temperature measurement thermocouples 5 is greater than 10 ℃ and is a high value, the main control unit 61 controls the driving mechanism 2 in the second heat source component corresponding to the detection region of the temperature measurement thermocouples 5 to drive the second heat source 3 to move so as to reduce heating of the region, and can simultaneously reduce the power of the second heat source 3 so as to reduce heating of the region, until the temperature value fed back by the temperature measurement thermocouples 5 is less than or equal to the preset threshold value of the temperature uniformity value, at this time, the operation of the driving mechanism 2 is stopped, and the temperature uniformity of the base 4 meets the process requirement index.
In practical applications, the temperature thermocouple 5 is interfered by the temperature of the environment where it is located, and the measured temperature value may deviate from the actual temperature value of the base 4, so in a preferred embodiment of the present invention, when the main control unit 61 executes the PID algorithm, a virtual disturbance value may also be sent to the proportional computing module 62, the integral computing module 63 and the differential computing module 64, so as to compensate the disturbance caused by the environmental temperature to the temperature thermocouple 5 by the disturbance value, thereby improving the accuracy of calculation of the proportional computing module 62, the integral computing module 63 and the differential computing module 64, and further improving the accuracy of adjustment to the second heat source 3.
In practical applications, the signals sent out after the calculation of the proportional calculation module 62, the integral calculation module 63 and the differential calculation module 64 are pulse outputs, and the proportional calculation module 62, the integral calculation module 63 and the differential calculation module 64 can generate errors due to self interference in the calculation process, so in a preferred embodiment of the invention, when the pulse outputs are sent out after the calculation of the proportional calculation module 62, the integral calculation module 63 and the differential calculation module 64, virtual pulse compensation can be further provided in the pulse outputs, so that the errors generated due to the self interference of the proportional calculation module 62, the integral calculation module 63 and the differential calculation module 64 can be compensated by the pulse compensation, and the accuracy of adjusting the second heat source 3 can be improved.
In summary, the semiconductor process equipment provided in this embodiment can improve flexibility of temperature control of the susceptor, so as to improve temperature uniformity of the susceptor 4, further improve resistivity value and resistivity uniformity of the substrate deposition layer, further improve service life of the heat source component, and reduce use cost.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present invention, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the invention, and are also considered to be within the scope of the invention.
Claims (8)
1. A semiconductor processing apparatus comprising a process chamber having a susceptor disposed therein for carrying a substrate, a first heat source assembly for heating the susceptor, wherein a second heat source assembly is disposed in the process chamber, the first heat source assembly disposed around the second heat source assembly, the second heat source assembly comprising a drive mechanism and a second heat source, wherein,
the second heat source is used for heating the base;
the driving mechanism is connected with the second heat source and is used for driving the second heat source to move so as to adjust the area of the base heated by the second heat source;
the second heat source comprises a heat source main body and a connecting structure, the heat source main body is used for heating the base, and the connecting structure is used for connecting the driving mechanism and the heat source main body;
the heat source main body comprises a heating lamp, a radiating fin and a connector, the connecting structure comprises an elastic jacket, a fastener and a connecting sleeve, wherein,
the elastic clamping sleeve is sleeved on the connecting head, the fastening piece is arranged on the elastic clamping sleeve in a penetrating mode and used for adjusting the elastic shrinkage degree of the elastic clamping sleeve to enable the elastic clamping sleeve to clamp the connecting head, one end of the connecting sleeve is connected with the elastic clamping sleeve, and the other end of the connecting sleeve is sleeved on a driving shaft of the driving mechanism.
2. The semiconductor processing apparatus of claim 1, wherein the drive mechanism comprises a rotational drive source coupled to the second heat source for driving the second heat source assembly in rotation to adjust the area of the susceptor heated by the second heat source in a radial direction of the susceptor.
3. The semiconductor processing apparatus of claim 1, comprising a plurality of said second heat source assemblies spaced apart along a circumference of said susceptor.
4. The semiconductor processing apparatus of claim 1 wherein said connection sleeve is threadably coupled to said drive shaft;
the connecting structure further comprises a connecting jackscrew, and the connecting jackscrew is used for fixedly connecting the connecting sleeve and the driving shaft.
5. The semiconductor processing apparatus of claim 1, wherein the connection structure further comprises a spring locator pin, the connection sleeve and the elastic collet being connected by the spring locator pin.
6. The semiconductor processing apparatus of any of claims 1-3, wherein the first heat source assembly comprises: the annular lamp holder is arranged on the base, and the annular reflecting screen is used for reflecting heat generated by the plurality of first heat sources to the base.
7. A semiconductor process apparatus according to any one of claims 1-3, wherein a temperature measurement thermocouple is provided in the base;
the semiconductor process apparatus further includes: and the controller is connected with the temperature measuring thermocouple and the second heat source component and is used for calculating the temperature uniformity value of the base according to the temperature value detected by the temperature measuring thermocouple and adjusting the area of the base heated by the second heat source until the temperature uniformity value is smaller than the preset threshold value when the temperature uniformity value is larger than the preset threshold value.
8. The semiconductor processing apparatus of claim 7 wherein said controller is further configured to adjust a region of said susceptor heated by said second heat source in response to a control command entered by a user.
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| CN113604796B (en) * | 2021-03-09 | 2022-08-30 | 联芯集成电路制造(厦门)有限公司 | Machine for improving deposition uniformity and operation method thereof |
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