CN111696872A - Packaging method of semiconductor light-emitting module - Google Patents
Packaging method of semiconductor light-emitting module Download PDFInfo
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- CN111696872A CN111696872A CN201910196861.4A CN201910196861A CN111696872A CN 111696872 A CN111696872 A CN 111696872A CN 201910196861 A CN201910196861 A CN 201910196861A CN 111696872 A CN111696872 A CN 111696872A
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- opening
- glue injection
- encapsulant
- lens structure
- substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
Abstract
The invention provides a packaging method of a semiconductor light-emitting module, which comprises the following steps: (a) providing a substrate, wherein the type of the substrate material can be a flexible printed circuit board, a metal printed circuit board, a printed circuit board or a ceramic substrate; (b) the substrate comprises a solder mask layer and a light-emitting element, wherein the solder mask layer is provided with an opening, the opening is provided with a width R, and the light-emitting element is arranged in the opening; (c) injecting the packaging colloid into the opening through the glue injection device; forming a sealed lens structure covering the light emitting element, the sealed lens structure having a solid height d.
Description
Technical Field
The present invention relates to the field of electronic device packaging, and more particularly, to a method for packaging a semiconductor light emitting module.
Background
With the trend of miniaturization of electronic products, the circuit board is also made thinner and thinner, so that the arrangement of the conductive traces and the connection terminals on the circuit board is also more and more dense and complex, and the size of the light emitting elements is also smaller and smaller. Accordingly, in the assembly process, the requirement for the assembly accuracy of the light emitting element is also increasing.
In the prior art, a light-emitting element mounted on a substrate by a resin molding technique is generally used, for example: the light emitting diode chip is packaged to form a sealing lens structure covering the light emitting element, so that light emitted from the light emitting element can be condensed through the sealing lens structure.
However, since the arrangement of the conductive traces and the connection terminals is too dense, the difficulty of applying resin molding techniques to the package is also increased.
In view of the above, the present invention provides a method for easily and quickly packaging a semiconductor light emitting module, and a sealed lens structure with different shapes and three-dimensional heights can be formed.
Disclosure of Invention
The present invention is directed to a method for packaging a semiconductor light emitting module, which can easily and rapidly form a sealing lens structure with different shapes and three-dimensional heights to adjust the light gathering degree of a light emitting device.
To achieve the above object, the present invention provides a method for packaging a semiconductor light emitting module, comprising the steps of:
(a) providing a substrate, wherein the substrate can be a flexible printed circuit board, a metal printed circuit board, a printed circuit board and a ceramic substrate;
the substrate comprises a solder mask layer and a light-emitting element, wherein the solder mask layer is provided with an opening, the opening is provided with a width R, and the light-emitting element is arranged in the opening;
(c) injecting the packaging colloid into the opening through the glue injection device; and
(d) forming a sealed lens structure covering the light emitting element, the sealed lens structure having a solid height d.
In the above preferred embodiment, wherein in the step (a), the substrate includes a circuit layer, the circuit layer portion is exposed in the opening.
In the above preferred embodiment, the light emitting device includes a light emitting diode chip and a bonding pad, and the bonding pad is electrically connected to the circuit layer.
In the above preferred embodiment, in the step (c), the encapsulant is Epoxy-resin, silicone-resin, Epoxy-resin, acrylic-resin, or UV curing glue, and the encapsulant can be filled with the diffusion particles, which can be CaCO3、TiO2、SiO2、Al2O3BN, ZnO or ZrO2。
In the above preferred embodiment, wherein in step (a), the width R is 0.7 mm.
In the above preferred embodiment, in the step (c), the aperture of the glue injection opening of the glue injection device is between 0.1mm and 0.3 mm.
In the above preferred embodiment, in the step (c), the viscosity of the encapsulant is between 3000Pa · s and 15000Pa · s, and the thixotropic property is between 1.5 and 6.0.
In the above preferred embodiment, the aperture of the glue injection opening of the glue injection device is between 0.1mm and 0.2mm, the viscosity of the encapsulant is between 3000Pa · s and 8500Pa · s, and the shaking property is between 1.5 and 3.0, so as to form a sealed lens structure with a three-dimensional height d approximately equal to 0.15 mm.
In the above preferred embodiment, the aperture of the glue injection opening of the glue injection device is between 0.2mm and 0.3mm, the viscosity of the encapsulant is between 6000Pa · s and 15000Pa · s, and the shaking property is between 2.4 and 6.0, so as to form a sealed lens structure with a three-dimensional height d approximately equal to 0.35 mm.
In the above preferred embodiment, the aperture of the glue injection opening of the glue injection device is between 0.2mm and 0.3mm, the viscosity of the encapsulant is between 3000Pa · s and 7000Pa · s, and the variation is between 1.5 and 1.9, so as to form a sealed lens structure with a solid height d approximately equal to 0.15 mm.
Drawings
FIG. 1: the invention provides a flow chart of a packaging method of a semiconductor light-emitting module;
FIG. 2: the packaging process of the semiconductor light-emitting module provided by the invention is shown schematically; and FIG. 3: cross-sectional views of various embodiments of semiconductor light emitting module packages are provided.
The reference numerals are explained below:
g packaging colloid
N injecting glue device
NO glue injection port
Width of R
S101 to S104
10 base plate
10A substrate material
101 solder mask
1011 opening
102 circuit layer
103 light emitting element
1031 light-emitting diode chip
10311 light-emitting surface
10312 bottom surface
1032 pad
104. 104a, 104c hermetically sealed lens structures
Detailed Description
The advantages and features of the present invention and methods of accomplishing the same will be understood more readily by reference to the following detailed description of exemplary embodiments and accompanying drawings. This invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
First, referring to fig. 1 and fig. 2, fig. 1 is a flowchart illustrating a method for packaging a semiconductor light emitting module according to the present invention; fig. 2 is a schematic view of a packaging process of the semiconductor light emitting module provided by the present invention. First, a substrate is provided, wherein the substrate material may be a flexible printed circuit board (FPC), a metal printed circuit board (MCPCB), a Printed Circuit Board (PCB), or a Ceramic substrate (step S101), and in step S101, the substrate material 10A of the substrate 10 may be a flexible printed circuit board (FPC), a metal printed circuit board (MCPCB), a Printed Circuit Board (PCB), or a Ceramic substrate (Ceramic PCB). The substrate includes a solder mask layer and a light emitting device, the solder mask layer has an opening with a width R, the light emitting device is disposed in the opening (step S102), in step S102, the substrate 10 has a solder mask layer 101, the solder mask layer 101 is an insulating layer, and the material of the insulating layer may be: epoxy-hybrid, silicone-hybrid, Epoxy, silicone, acrylic hybrid or UV curing glue. The solder mask layer 101 is disposed with a circuit layer 102, the material of the circuit layer 102 is copper, and a portion of the circuit layer is exposed in the opening 1011 of the solder mask layer 101, and the opening 1011 has a width R. The light emitting device 103 is disposed in the opening 1011 by a Flip chip scheme (Flip chip scheme), and the light emitting device 103 includes a light emitting diode chip 1031 and a bonding pad 1032. The led chip 1031 has a light emitting surface 10311 and a bottom surface 10312 opposite to the light emitting surface 10311, the bonding pads 1032 are disposed on the bottom surface 10312, and the led chip 1031 can be electrically connected to the circuit layer 102 through the bonding pads 1032 without using a conventional wire bonding structure. In the present embodiment, the opening 1011 of the solder mask 101 is fabricated by Solder Mask Defined (SMD) technique or non-solder mask defined (NSMD) technique, and the width R of the opening 1011 of the solder mask 101 is 0.7 mm.
Next, the encapsulant is injected into the opening by the encapsulant injection device (step S103), and in step S103, the encapsulant injection device N is disposed above the light emitting element 103, and the encapsulant injection port NO of the encapsulant injection device N is close to the light emitting diode chip 1031. Thus, a predetermined amount of liquid encapsulant G can be supplied within a predetermined time by the glue injection port NO, and the encapsulant G is injected into the opening 1011 to cover the light emitting element 103. In this embodiment, the aperture of the glue injection port NO of the glue injection device N is between 0.1mm and 0.2mm, the encapsulant G may be Epoxy-hybrid, silicone-hybrid, Epoxy, silicone, acrylic, or UV curing glue, and the encapsulant G may be filled with diffusion particles, which may be CaCO3、TiO2、SiO2、Al2O3、BN、ZnO、ZrO2And a viscosity of 3000Pa · s to 8500Pa · s; the shake-off property is between 1.5 and 3.0.
Finally, a sealing lens structure covering the light emitting device is formed, the sealing lens structure has a three-dimensional height d (step S104), in step S104, the three-dimensional height d of the sealing lens structure 104 can be adjusted and determined by adjusting the width R of the opening 1011 of the solder mask 101 and the viscosity and the swing property of the encapsulant G, for example, when the width R of the opening 1011 is larger, the volume capable of accommodating the encapsulant G is larger, so that the three-dimensional height d of the sealing lens structure 104 becomes lower, or when the viscosity and the swing property of the encapsulant G are high, the three-dimensional height d of the sealing lens structure 104 becomes higher due to the higher viscosity of the encapsulant G; when the viscosity and the shaking property of the encapsulant G are low, the three-dimensional height d of the sealing lens structure 104 is lowered due to the low viscosity of the encapsulant G.
Referring to fig. 3, fig. 3 is a cross-sectional view of a semiconductor light emitting module package according to a different embodiment of the present invention, when the aperture of the glue injection opening NO of the glue injection device N is between 0.1mm and 0.2mm, the viscosity of the encapsulant G is between 3000Pa · s and 8500Pa · s; when the variation is between 1.5 and 3.0, the encapsulant G injected within a predetermined time period can form the sealed lens structure 104a with a solid height d approximately equal to 0.15mm (as shown in fig. 3 (i)). When the caliber of the glue injection port NO of the glue injection device N is between 0.2mm and 0.3mm, the viscosity of the packaging colloid G is between 6000Pa & s and 15000Pa & s; when the variation is between 2.4 and 6.0, the aperture of the glue injection opening NO is larger, so that more encapsulant G is injected in a predetermined time, and the viscosity of the encapsulant G is higher, so that the encapsulant G can form the sealed lens structure 104b with a three-dimensional height d approximately equal to 0.35mm (as shown in (ii) of fig. 3).
On the other hand, if a sealed lens structure with a large coverage area is to be formed, the encapsulant G with a low viscosity can be injected through the injection hole NO with a large aperture, such as: when the caliber of a glue injection port NO of the glue injection device N is between 0.2mm and 0.3mm, the viscosity of the packaging colloid is between 3000Pa & s and 7000Pa & s; when the variation is between 1.5 and 1.9, the aperture of the glue injection opening NO is larger, so that more encapsulant G is injected in a predetermined time, and the viscosity of the encapsulant G is lower and can diffuse around, so that the encapsulant G can form a sealed lens structure 104c with a solid height d approximately equal to 0.15mm and a larger coverage area (as shown in (iii) of fig. 3).
Compared with the prior art, the invention provides a simple and rapid packaging method of the semiconductor light-emitting module, and the appearance and the three-dimensional height of the sealing lens structure can be adjusted by adjusting the opening of the solder mask layer, the caliber of the glue injection device and the viscosity and the shaking property of the packaging colloid, so as to adjust the light concentration degree of the light-emitting element. Therefore, the present invention is an invention with great industrial value.
Changes and modifications within the spirit of the disclosure may be effected by one skilled in the art without departing from the scope of the disclosure as defined by the appended claims.
Claims (10)
1. A packaging method of a semiconductor light emitting module comprises the following steps:
(a) providing a substrate, wherein the substrate can be a flexible printed circuit board, a metal printed circuit board, a printed circuit board or a ceramic substrate;
(b) the substrate comprises a solder mask layer and a light-emitting element, wherein the solder mask layer is provided with an opening, the opening is provided with a width R, and the light-emitting element is arranged in the opening;
(c) injecting a packaging colloid into the opening through a glue injection device; and
(d) forming a sealing lens structure covering the light emitting element, wherein the sealing lens structure has a three-dimensional height d.
2. The method according to claim 1, wherein in step (a), the substrate includes a circuit layer, and the circuit layer is partially exposed in the opening.
3. The method as claimed in claim 2, wherein the light emitting device comprises at least one LED chip and at least two bonding pads, the at least two bonding pads are electrically connected to the circuit layer.
4. The method according to claim 1, wherein in step (c), the encapsulant is Epoxy-hybrid, silicone-hybrid, Epoxy, silicone, acrylic hybrid, UV curing glue, and is filled with a diffusion particleThe bulk particles may be CaCO3、TiO2、SiO2、Al2O3BN, ZnO or ZrO2。
5. The method according to claim 1, wherein in step (a), the width R is 0.7 mm.
6. The method according to claim 5, wherein in the step (b), the aperture of the glue injection opening of the glue injection device is between 0.1mm and 0.3 mm.
7. The method according to claim 6, wherein in step (b), the viscosity of the encapsulant is between 3000 Pa-s and 10000 Pa-s, and the thixotropic property is between 1.5 and 2.8.
8. The method according to claim 7, wherein an aperture of the glue injection opening of the glue injection device is between 0.1mm and 0.2mm, a viscosity of the encapsulant is between 3000 Pa-s and 8500 Pa-s, and a swing property is between 1.5 and 3.0, so as to form the encapsulated lens structure with the solid height d approximately equal to 0.15 mm.
9. The method according to claim 7, wherein an aperture of the glue injection opening of the glue injection device is between 0.2mm and 0.3mm, a viscosity of the encapsulant is between 6000 Pa-s and 15000 Pa-s, and a warpage is between 2.4 and 3.0, so as to form the encapsulated lens structure with the solid height d approximately equal to 0.35 mm.
10. The method according to claim 7, wherein an aperture of the glue injection opening of the glue injection device is between 0.2mm and 0.3mm, a viscosity of the encapsulant is between 3000 pas and 7000 pas, and a warpage of the encapsulant is between 1.5 and 1.9, so as to form the encapsulated lens structure with the solid height d approximately equal to 0.15 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910196861.4A CN111696872A (en) | 2019-03-15 | 2019-03-15 | Packaging method of semiconductor light-emitting module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910196861.4A CN111696872A (en) | 2019-03-15 | 2019-03-15 | Packaging method of semiconductor light-emitting module |
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| Publication Number | Publication Date |
|---|---|
| CN111696872A true CN111696872A (en) | 2020-09-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910196861.4A Pending CN111696872A (en) | 2019-03-15 | 2019-03-15 | Packaging method of semiconductor light-emitting module |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070096272A1 (en) * | 2005-10-28 | 2007-05-03 | Jiun-Heng Wang | Light emitting diode package |
| US20070108460A1 (en) * | 2005-11-15 | 2007-05-17 | Samsung Electro-Mechanics Co., Ltd. | LED package |
| CN101636450A (en) * | 2007-03-19 | 2010-01-27 | 三友瑞克株式会社 | The manufacture method of silicone resin composition for encapsulating luminescent element and the photosemiconductor electronic unit that undertaken by the pouring type that uses it |
| US20130032843A1 (en) * | 2011-08-01 | 2013-02-07 | Samsung Electronics Co., Ltd. | Light emitting diode package and manufacturing method thereof |
-
2019
- 2019-03-15 CN CN201910196861.4A patent/CN111696872A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070096272A1 (en) * | 2005-10-28 | 2007-05-03 | Jiun-Heng Wang | Light emitting diode package |
| US20070108460A1 (en) * | 2005-11-15 | 2007-05-17 | Samsung Electro-Mechanics Co., Ltd. | LED package |
| CN101636450A (en) * | 2007-03-19 | 2010-01-27 | 三友瑞克株式会社 | The manufacture method of silicone resin composition for encapsulating luminescent element and the photosemiconductor electronic unit that undertaken by the pouring type that uses it |
| US20130032843A1 (en) * | 2011-08-01 | 2013-02-07 | Samsung Electronics Co., Ltd. | Light emitting diode package and manufacturing method thereof |
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Application publication date: 20200922 |