CN111696802A - Intelligent chip set module of non-arc switch - Google Patents
Intelligent chip set module of non-arc switch Download PDFInfo
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- CN111696802A CN111696802A CN202010684636.8A CN202010684636A CN111696802A CN 111696802 A CN111696802 A CN 111696802A CN 202010684636 A CN202010684636 A CN 202010684636A CN 111696802 A CN111696802 A CN 111696802A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
- H01H9/54—Circuit arrangements not adapted to a particular application of the switching device and for which no provision exists elsewhere
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K2017/0803—Modifications for protecting switching circuit against overcurrent or overvoltage against radiation hardening
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Abstract
The invention relates to the technical field of non-arc cutoff, in particular to an intelligent chipset module of a non-arc switch. The thyristor comprises a thyristor chip, a controller and a load, wherein the load and the controller are connected with the thyristor chip. By adopting the structure, the false triggering probability of the intelligent chipset module can be reduced, the reliability of the intelligent chipset module is improved, alternating current and direct current can be further enabled, the price of the ultra-high voltage switch from low voltage to medium voltage to high voltage is reduced, the electric service life is prolonged by 20-50 times, the annual demand at home and abroad can reach hundreds of billions of yuan, electrician raw materials and precious metals can be saved every year, the switch has no safe explosion-proof benefit of arc breaking and closing, and the ecological environment-friendly social benefit to human health is particularly obvious.
Description
Technical Field
The invention relates to the technical field of non-arc cutoff, in particular to an intelligent chipset module of a non-arc switch.
Background
The invention is invented on the basis of the invention patent of 'cutoff switch' and the invention patent of 'chip thyristor and chip transistor and application thereof' under the guidance of 'arc-free cutoff theory and application thereof'.
1. The domestic background technology is as follows:
arc extinguishing theory and principle:
the theory of power switches developed at home and abroad is the arc extinguishing theory and the arc extinguishing principle, the arc extinguishing theory considers that the generation of an arc by the power switch is inevitable, a switch element closes or opens a circuit when moving, and is connected or isolated from a power supply when not moving, and the essential function of the arc extinguishing theory is to play the role of an impedance converter, namely the impedance of a certain point in the circuit is from o → ∞ or ∞ → o. An "arc" is a difficult, but also indispensable, breaking element in this rapid transformation. 1. For a mechanical switch with contacts in a high voltage high current circuit, the conversion can only be accomplished by an arc. 2. The problem is how to limit its adverse effects.
Over a hundred years, scientists and professionals who develop novel power switches such as circuit breakers and the like all make efforts to extinguish arcs according to arc extinguishing theories and arc extinguishing principles thereof, and develop continuously innovative power switches. It is natural and natural that an advanced power switch can be developed and produced by trying to extinguish an arc as soon as possible as the arc appears in the power switch. The theory of arc-free current interruption and the arc-free principle thereof are developed without considering that the method tries to prevent the generation of the arc or weaken the condition of the generation of the arc before the arc appears. To guide production and develop an arc-free intelligent switch, is it very easy to break a circuit with such a power switch? And can also eliminate effectively because of the electric arc damps the phenomenon and the emergence that produces, higher operation overvoltage, to the high standard requirement of whole electric power system insulation like this, can not just lighten very big pressure, then, I relapse theoretical analysis, draw the following conclusion:
1) the production practice is usually ahead of the theory of scientific research and manufacture. On the basis of an electric contact theory, an arc extinguishing theory and an arc extinguishing principle thereof, an arc-free theory and various arc-free principles thereof can be researched, and further, the research and development of an arc-free intelligent switch can be guided.
2) The two rare production examples of misoperation of arc-free cutoff fully explain that under the voltage level of 6KV, zero points can be captured at the moment when three-phase alternating current flows through zero by manual operation speed, and arc-free cutoff switching-on and switching-off operation can be carried out. The arc-free cutoff theory is summarized from the one-tenth accidental research, the production practice can be guided by ensuring the reliability without any loss, and the arc-free intelligent switch is developed.
The arc-free cutoff theory and the application thereof believe that the formation of the arc requires tens to hundreds of microseconds when the switch is switched on and off under the power frequency voltage, and before the arc is not generated, various factors for forming the arc can be weakened and various conditions for generating the arc can be damaged by adopting various arc-free principles in thousands of squares, so that the time is prolonged by more than several times. By adopting a soft switching technology of zero voltage switching-on and zero current switching-off, current in a switching loop is transferred to a branch circuit of an intelligent chipset module which is connected with a switch in parallel, and a switch contact can be switched on and off without arcs; and the switch can be switched on when the voltage is zero, so that the impact current during the switch-on can be effectively limited. The intelligent arc-free switch is an arc-free cutoff theory, is also a working principle of an intelligent chip set module of the arc-free switch, and is continuously researched and developed for various voltage classes and current capacities on the basis of the arc-extinguishing theory and the arc-extinguishing principle.
2. Foreign background art:
from the 20 th century, the 50 s to the present, the development of power electronics has gone through four stages: the first stage is a rectifier age, the second stage is a thyristor age, the third stage is an IGBT and MOSFET age, and the fourth stage is a POWER IC age. The development in these four stages is not a new generation device to replace an old generation device, but in each stage, various power electronic devices have been developed. In recent years, chip semiconductor devices such as chip diodes and chip electronic components have been developed.
Hundreds of chips are developed in mobile phones, televisions, computers and intelligent automobiles abroad, the voltage level of the chips is only a few volts or dozens of volts, and the current is milliampere or ampere. The chip set is developed only in mobile phones and computers. The developed countries in the United states, the Japan and the Europe are developing intelligent automobile chip sets, and no report of successful development is found, and no report of intelligent chip set module research is found. The voltage of the developed intelligent chipset module can reach thousands of volts to hundreds of thousands of volts; the current can reach thousands of amperes. We are now 10 years ahead of developed countries, with voltage ratings and current capacities several orders of magnitude greater than those of chips developed abroad.
From many years of research by scientists and experts in various countries, it is known that all electric products, overhead lines, cables buried in the ground, and even electric wires and mobile phones including wall bushings have researched the safety standards of electromagnetic radiation. Electromagnetic radiation of power switch arcs is not mentioned alone. The high-frequency electromagnetic radiation emitted to the space electromagnetic field by the switch electric arc has serious pollution to the space electromagnetic field of human beings, and is possibly more serious than haze, but the haze can be seen, and the electromagnetic radiation of the switch electric arc cannot be seen, so that the switch electric arc is a hidden killer for human health. The intelligent chipset module and the power switch are connected in parallel with a matched arc-free intelligent switch, and no electric arc is generated during switching on and off, so that the invisible killer is eliminated. Can protect the population of the world 1/2 from the electromagnetic radiation of the switching arc and the new infectious diseases caused by the electromagnetic radiation, and can benefit all mankind! Fills the gap of the developed countries for researching the electromagnetic radiation pollution.
However, the intelligent chipset module in the prior art has a poor effect after being used on an arc-free switch, and is easy to generate misjudgment.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the arc-free switch intelligent chipset module is not easy to misjudge.
The technical scheme adopted by the invention is as follows: an intelligent chip set module of an arc-free switch comprises a thyristor chip, a controller and a load, wherein the load and the controller are connected with the thyristor chip set.
Preferably, when the arcless switch intelligent chip set module is applied to a single-phase alternating current 220V voltage, the thyristor chip is a bidirectional thyristor chip, the controller is of the type KJ008, the bidirectional thyristor chip is connected in series with a load and then connected in parallel with two ends of the 220V voltage, one end of the bidirectional thyristor chip is connected with a pin 5 of the controller through a resistor R1, a resistor R2 and a capacitor C1 which are connected in parallel are arranged between a pin 1 and a pin 5 of the controller, a thermistor R4 and a sliding resistor R9 are connected in series and then connected in parallel with a capacitor C2 and then arranged between the bidirectional thyristor chip and a pin 7 of the controller, a pin 2 of the controller is connected between a thermistor R4 and a sliding resistor R9, a voltage stabilizing diode and a resistor R3 are connected in series between a pin 8 of the controller and the 220V voltage, and a pin 3 of the controller is connected with one end of the bidirectional thyristor chip, the pin number 4, the pin number 11, and the pin number 12 of the controller are connected to each other, and the pin number 6 and the pin number 7 of the controller are connected to each other.
Preferably, when the arcless switch can only be applied to a three-phase alternating-current 380V voltage by using the chipset module, the controller is of a type TH103, the thyristor chip comprises six pins, namely a thyristor chip VT1, a thyristor chip VT2, a thyristor chip VT3, a thyristor chip VT4, a thyristor chip VT5 and a thyristor chip VT6, the pin numbered 16, the pin numbered 17, the pin numbered 18, the pin numbered 20, the pin numbered 21 and the pin numbered 22 of the controller are all connected with the pulse transformer, the thyristor chip VT1 is connected with the thyristor chip VT4 end to end, the thyristor chip VT2 is connected with the thyristor chip VT5 end to end, the thyristor chip VT3 is connected with the thyristor chip VT6 end to end, and the pulse transformer is respectively connected with the negative electrode end of the thyristor chip 1, the negative electrode end of the thyristor chip VT4, the negative electrode end of the thyristor chip 2, The negative terminal of thyristor chip VT5, the negative terminal of thyristor chip VT3 and the negative terminal of thyristor chip VT6, the pin that the serial number of controller is 19 connects 24V power, and the pin that the serial number of controller is 6 connects control signal.
Compared with the prior art, the invention has the following advantages by adopting the structure: by adopting the structure, the false triggering probability of the intelligent chipset module can be reduced, the reliability of the intelligent chipset module can be improved, the price of an ultra-high voltage switch from low voltage to medium voltage to high voltage is reduced, the electric service life is prolonged by 20-50 times, the annual demand at home and abroad can reach hundreds of billions of yuan, the electrician raw materials and precious metals can be saved every year, the switch has no safe explosion-proof benefit of arc breaking and closing, and the ecological environment-friendly social benefit to human health is particularly obvious.
Drawings
Fig. 1 is a circuit schematic diagram of a single-phase alternating current 220V arcless switch intelligent chipset module.
Fig. 2 is a wiring diagram of a single-phase alternating current 220V arc-free switch intelligent chipset module.
Fig. 3 is a circuit schematic diagram of the intelligent chipset module of the dc 200V arcless switch.
Fig. 4 is a schematic circuit diagram of a three-phase alternating current 380V arc-free switch intelligent chipset module.
Fig. 5 is a wiring diagram of a three-phase alternating current 380V intelligent chipset module of the arcless switch.
Detailed Description
The present invention will be further described below by way of specific embodiments, but the present invention is not limited to the following specific embodiments.
The invention content of the intelligent chip group module of the arc-free switch is as follows:
the patent of 'intelligent chip set module of non-arc switch' is invented on the basis of 'cut-off switch' invention patent and 'chip thyristor chip and chip transistor and their application' invention patent under the guidance of 'non-arc cut-off theory and its application'. Under the theoretical guidance of the arc-free flow interruption theory and the application thereof, three steps of the invention patents are researched and developed, and a group of pioneering invention patents are combined by three invention patents.
The description of the "cutout switch" invention remains valid and will not be repeated here.
The contents described in the invention patent of "chip thyristor chip and chip transistor and its application" are still valid. And will not be repeated here.
The development technology of the intelligent chip group module of the arc-free switch comprises the following steps:
main technical characteristics of power semiconductor chip
At present, the technologies for developing mobile phone chips, computer chips and intelligent automobile chips at home and abroad and developing chip sets are developing vigorously. However, the main technical characteristics of the power semiconductor chip are different from those of a mobile phone chip, a computer chip and an intelligent automobile chip. The voltage of the mobile phone chip is only about 5 volts, the current is milliampere level, the voltage of the computer chip is about 20 volts, the current is ampere level, the voltage of the intelligent automobile chip is about 100 volts and about 200 volts, and the current is dozens of amperes at most. The power semiconductor chip has voltage from dozens of volts to ten thousand volts, current from several amperes to 8000 amperes, and other technical parameters have different meanings.
The moore's law of chips is not perfect and is not suitable for power semiconductor chips. The voltage and current of the power semiconductor chip are increased along with the increase of the external dimension, so that the cost can be increased and the function can be increased.
According to the invention patent of 'cutoff switch', the chip of the electronic cutoff is developed by gradually developing on the basis of the described electronic cutoff, and the chip of the electronic cutoff is developed by using a thyristor chip or a chip of a transistor or a silicon chip.
The development method of the power semiconductor chip set comprises the following steps:
according to the invention patent of 'chip type thyristor chip and chip type transistor and its application', a chip type thyristor chip and a chip type transistor are further developed, namely a chip group which is commonly called internationally. One group of chip type thyristor chip is a chip group, two common thyristor chips are parallelly connected in reverse direction to make an AC chip type thyristor, i.e. an AC chip group, and one G is usedTOThe thyristor chip can be used for manufacturing a direct current sheet type thyristor, namely a direct current chip group.
The drive integrated circuit technical characteristics of the intelligent chip set module:
the control precision of a driving integrated circuit of the intelligent chipset module can reach microsecond triggering, the time for controlling the arc-free switching-on and switching-off can be adjusted to millisecond level according to the movement speed of the switch contact, and the time for controlling the arc-free switching-on and switching-off is accurately controlled. The development technology of the driving integrated circuit will be described in detail.
The development method of the power semiconductor intelligent chipset module comprises the following steps:
the development is continued, and one or more chipsets and a drive integrated circuit are connected with a debugging package, so that the intelligent chipset module can be assembled. The volume and weight of the micro-switch device are 5-10 times less than those of a thyristor or a transistor, and the price of the micro-switch device is also reduced by several times, so that the micro-switch device is an intelligent contactless micro-switch device.
The intelligent chip set module of the arc-free switch can be assembled into a single-phase alternating current contactor or a single-phase alternating current breaker by connecting an alternating current chip set with a driving integrated circuit.
The intelligent chip set module of the arc-free switch can be assembled into a direct current contactor or a direct current breaker by connecting a direct current chip set with a driving integrated circuit.
Three AC chip sets are connected with a drive integrated circuit, and can be assembled into an arc-free switch intelligent chip set module of a three-phase AC contactor or a three-phase AC circuit breaker.
The intelligent chip group module of the arc-free intelligent switch can not be independently put into circuit operation, must be connected with a contactor or a breaker in parallel for operation, and operates within 1-several cycles of the switching-on or switching-off moment of the power switch, transfers the current in a switch loop into the module for non-contact connection or disconnection, and achieves arc-free switching-on and switching-off. The integrated circuit in the module is designed in a high-level intelligent mode, and the time of the arc-free switching-off and switching-on is accurately controlled.
The existing various power switches below 3 kv, including ac and dc contactors, circuit breakers and load switches, can be matched in parallel with an intelligent chipset module of the same voltage class and the same current specification to develop an arc-free switch. When the power switch is switched on, firstly, after the module is triggered and conducted, the switch is reliably switched on without an arc, the load current in the loop is automatically transferred to the main loop of the power switch, and then the intelligent chipset module is switched off. When the power switch is switched off, the intelligent chip set module is firstly triggered quickly, the load current in the switch is automatically transferred to the intelligent chip set module, the switch is enabled to conduct arc-free switching-off reliably, then the intelligent chip set module is switched off, and therefore the arc-free switch is developed.
When the technology is assembled according to the method, the characteristic of switching on and off of the AC/DC contactor is firstly understood, the switch which is frequently operated by remote automatic control is a switch, only the rated current and the starting current of a load can be cut off, and the short-circuit current cannot be cut off. The control precision of a driving circuit of the intelligent chipset module can be set at microsecond level for triggering, and the time for controlling the arc-free switching on and off can be adjusted to millisecond level according to the movement speed of the contactor contact. The contactor can touch short-circuit current in the operation process, and therefore an original common fuse needs to be replaced by a fast fuse or a fast switch in a main loop, and the intelligent chip set module can be protected from being thermally broken down.
In the closing process of various alternating current and direct current contactors below 3 kilovolts, the important characteristic is that the bounce of two collisions can occur. The bounce of the first collision occurs at the moment when the contactor contact is closed, the bounce of the second collision occurs at the moment when the iron core is closed, and in the process of the bounces of the collisions, the electric arc is repeatedly extinguished and reignited along with the frequency of the bounces. For the arc-free switching-off and switching-on method under the condition, the intelligent chip set module assembled in the loop can be developed into microsecond-level quick trigger switching-on by adopting the arc-free switching-off and switching-on technology, and the bouncing frequency speed of collision can be achieved.
The technology of non-arc switch-on and switch-off of DC contactor and circuit breaker below 3 KV can be developed by GTOA DC chip type thyristor made of chip and a method for forcing the DC off. The method can also adopt a method for turning off the zero point by direct current reflow, namely, a method for turning on the direct current circuit by using a sheet type thyristor connected by two common thyristor chips with the common cathode, and turning off the direct current circuit by turning on one thyristor and manufacturing the zero point by the other thyristor. The arc-free switching-off and switching-on technology of the circuit breaker also adopts the quick-break protection method in the invention patent of the 'cutoff switch' for short-circuit protection.
The technology of short-circuit protection arc-free switching-off and switching-on of various circuit breakers needs to consider the short-circuit capacity and the short-circuit impedance of a system, the non-periodic component of the short-circuit current is transient current which is exponentially and curvilinearly attenuated in about ten cycle times after the short-circuit occurs, and the short-circuit current has reactance and cannot suddenly change to generate reverse current. Typically, after the zero crossing starts to appear around 20ms to 60ms, the transient component gradually decays to zero. The arc-free switch intelligent chipset module can withstand the test of 60-100ms short-circuit current. Otherwise, the quick-break protection method in the invention patent of the 'cutoff switch' is also adopted.
The alternating current and direct current contactors with various voltage grades and current specifications are developed, and the contact opening distance and the over-travel are different along with different working environments and different purposes. The time constant of the intelligent chip set module can be adjusted according to the contact opening distance and the over-travel of various alternating current and direct current contactors when the intelligent chip set module is manufactured, assembled and packaged.
The development of the non-arc opening and closing of the non-arc switch intelligent chipset module of medium-voltage, high-voltage, ultrahigh-voltage and extra-high voltage is realized.
Firstly, it is considered that after the contacts are separated, if the intelligent chipset module in the parallel shunt switches off the circuit when the current crosses zero, the high voltage randomly borne by the contacts may break down the contact gap to cause an arc. 4 arc extinguishing principle methods in the arc extinguishing theory can be developed into four arc-free principle methods before the contact gap is not broken down to cause the arc. Four methods of arc-free principle are adopted: firstly, a method for automatically adding gas or liquid medium of strong medium at the moment of contact separation; secondly, adopting a high-speed blowing air medium flowing method; thirdly, blowing in liquid medium at high speed for flowing; and fourthly, adopting an electromagnetic field blowing method. Various non-arc principle methods can prevent the electric field ionization and electron emission of the contact gap from being broken down, and electric arcs cannot be generated. After the breaking distance of the contact reaches the distance which cannot be punctured, the circuit of the intelligent chip set module is turned off. However, the problem is still solved by considering that the intelligent chipset module can bear the current of several cycles and can not be damaged by thermal breakdown. Otherwise, the quick-break protection method in the invention patent of the 'cutoff switch' is also adopted.
The high-voltage intelligent chip set module can bear current of several cycles and cannot be damaged by thermal breakdown. The solution is similar to that of a low-voltage circuit breaker, 6 quick-break protection methods for limiting short-circuit current are adopted, and different protection methods can be adopted when different new products are specifically researched.
The highest voltage of a thyristor manufactured by the advanced production technology of power semiconductors at home and abroad is only ten thousand volts, the maximum current is only 8 kiloamperes, 6KA/8KV is commonly used, and the thyristor is used for an arc-free switch intelligent chipset module with medium-voltage and above voltage levels. The method for solving the problems is to adopt a series intelligent chip group cutting device module on an intelligent chip group module loop. At this moment, a new problem occurs, the voltage born by each chip on the series intelligent chip chopping device module is different in operation, and the chip with high bearing voltage can be damaged due to electric breakdown, so that all the electric breakdown of the chip chopping device module is caused. The method of connecting resistors in parallel and the method of connecting dynamic voltage-sharing resistor-capacitor in parallel can be adopted for each chip, and the voltage-sharing problem of the series intelligent chip module can be solved.
For the switch loop with the current larger than 6KA, the problem is solved by adopting a method of connecting a plurality of intelligent chip set modules in parallel in the loop, so that the problem of improving the current capacity can be solved. At this moment, a new problem occurs, the current difference on a plurality of intelligent chipset modules is large in progress, the intelligent chipset module bearing large current can be damaged due to thermal breakdown, and the other intelligent chipset modules can be damaged due to thermal breakdown. The method for solving the problems can adopt a method of connecting a resistor in series and a series reactor in each intelligent chip set module loop which is connected in parallel, and can solve the current sharing problem of the parallel chip type thyristors.
The non-arc intelligent switch has two structures of a split type and an integrated type
The split type is that the existing power switch is not moved, and the existing power switch is connected with the arc-free intelligent module with the same specification in parallel to form the arc-free intelligent switch, and the service life of the switch can be prolonged by 30 to hundreds of times without generating electric arc during switching-on and switching-off operation. The price of the module is 1/3 to 1/8 of the same specification switch, and the price ratio is continuously reduced along with the increase of the voltage grade and the current capacity. The arcless intelligent module is packaged by a chip thyristor and a novel control circuit, the volume and the weight of the arcless intelligent module are 10 times less than those of the thyristor, and the price of the arcless intelligent module is also reduced by times. Because the module has small volume and light weight, the module can be fixed at a proper position of the switch without influencing the installation distance. The split type arc-free intelligent module is sold to users of power switches which are already put into operation, and can be sold in a matched manner for the switches which are assembled by switch manufacturers.
An integrated arc-free intelligent switch is characterized in that the existing power switch is modified, a more expensive arc suppression cover is saved, and a cheap organic glass protective cover is modified; for the improvement of the contactor, the silver alloy contact can be saved, and the copper contact is plated with silver, so that good contact resistance can be ensured; for the improvement of the circuit breaker, a thicker tungsten contact layer made of tungsten alloy is not needed on the contact, and the good contact resistance can be ensured only by plating silver on the copper contact. And fixing the arc-free intelligent modules with the same specification at a proper position in the switch, and connecting and packaging the arc-free intelligent modules in parallel. The non-arc intelligent switch has lower price than the original switch and is accompanied with the reduction of the original switchThe price will be significantly reduced by the increase in voltage levels and the increase in current capacity. In particular SF of the high voltage class mentioned above6The ratio of the comprehensive cost of the breaker is reduced by times!
An arc-free switch intelligent chipset module is a strategic emerging industry of power switch industrial intellectualization and power electronic industrial miniaturization in the electric and electronic field, and cross-industry originality innovation. Including the power semiconductor industry, the integrated circuit industry, the power switch industry, the electronic switch industry, the plastic packaging industry and the high-end intelligent equipment manufacturing industry. The arc-free intelligent modules are produced in large batch by using a robot automatic production line and a detection line, so that huge domestic and foreign market demands can be met, and an innovative industrial cluster can be constructed. The intelligent product without the chip thyristor and the novel control circuit is abroad, and the export of the intelligent product can earn billions to trillions of yuan each year! The social benefits of safety explosion-proof property, energy conservation, consumption reduction, purification, environmental protection and the like are more huge!
Structural characteristics of intelligent chip set module of non-arc switch
Structure of single-phase alternating current arc-free switch intelligent chipset module
An AC welding type bidirectional thyristor chip or silicon chip is welded with a red copper sheet to form a single-phase AC chip set according to the welding method in the invention patent of 'a chip thyristor and a chip transistor and application thereof'.
An AC crimping type bidirectional thyristor chip or silicon chip is used to be crimped with a red copper sheet into a single-phase AC chip set according to the crimping method in the invention patent of 'sheet type thyristor and sheet type transistor and application thereof'.
The single-phase alternating current chip set and a single-phase alternating current driving integrated circuit can be connected into a single-phase alternating current arc-free switch intelligent chip set module.
Structure of intelligent chip set module of direct-current non-arc switch
Using a gate of the direct current welding type to turn off the thyristor GTOChip or silicon chip, according to the invention patent of' chip thyristor and chip transistor and its applicationThe method can be welded with a red copper sheet to form a direct current chip set.
Using a dc-crimped gate turn-off thyristor GTOThe chip or the silicon chip can be crimped with the red copper sheet into a direct current chip set according to the crimping method in the invention patent of 'the chip thyristor, the chip transistor and the application thereof'.
The direct current chip set and a direct current drive integrated circuit can be connected into a direct current arc-free switch intelligent chip set module.
Structure of intelligent chip set module of three-phase alternating-current arcless switch
The method is characterized in that 6 alternating current welding type thyristor chips or silicon chips are used, every two of the thyristor chips or the silicon chips are connected in an anti-parallel mode to form three single-phase chip sets, and the three single-phase chip sets and a red copper sheet can be welded according to a welding method in the invention patent of 'a chip thyristor, a chip transistor and application thereof'.
Every two of 6 AC crimping type thyristor chips or silicon chips are connected in anti-parallel to form three single-phase chip sets, and according to the crimping method in the invention patent of 'chip thyristor and chip transistor and application thereof', the three-phase AC chip sets can be crimped with the red copper sheet.
The three-phase alternating current chip set and a three-phase alternating current driving integrated circuit can be connected into a three-phase alternating current arc-free switch intelligent chip set module.
Embodiment of single-phase alternating current 220V arc-free switch intelligent chipset module
Internal structure and working principle
The internal structure and the working principle circuit of the single-phase alternating current 220V arc-free switch intelligent chipset module are shown in FIG. 1. The working principle of the device can be briefly analyzed as follows: when the single-phase alternating current 220V non-arc switch intelligent chipset module circuit is applied at zero voltage, synchronous voltage is added between a pin 1 and a pin 14 through an external R2, zero-crossing detection is carried out through a V1, one end (pin 4) of a differential comparator consisting of V2-V5 is connected with reference voltage, and when the voltage from a sensor (pin 2) is smaller than the reference voltage, an output stage consisting of V7 and V8 sends trigger pulses when the synchronous power supply passes through zero. When the voltage at pin 2 is greater than the reference voltage, the output stage is off and there is no trigger pulse.
Application technique
A typical wiring for zero voltage triggered applications, a single phase ac 220V arcless switch intelligent chipset module as a typical wiring for such applications is shown in fig. 2. When the alternating voltage is higher than 220V, the resistances of the resistors R2, R3, R4 and RP in the figure are correspondingly increased: and when the ac voltage is lower than 220V, these resistances may be reduced accordingly. The resistance (Ω) of the synchronous resistor R2 can be calculated as follows
R2 ═ (synchrotron pressure/5) × 103
The sensitive element in the figure can be a thermistor with a negative temperature coefficient, and can also be a control element or a switching signal, the on-signal voltage of the single-phase alternating current 220V arc-free switching intelligent chipset module is (Vc/2) -1, the off-signal voltage is (Vc/2) +1, and Vc is the voltage value at two ends of a capacitor C2.
Embodiment of intelligent chipset module of direct-current 200V arc-free switch
The typical circuit of the "hard drive" gate unit of a dc 200V arcless switching smart chipset module, as shown in fig. 3, can be divided into two parts: the upper part circuit controls the opening process, the lower part circuit controls the closing process, and the two parts work independently. The working process is as follows.
Gate circuit during turn-on: during turn-on, the gate current waveform is determined by capacitor C1 and switch S10, the capacitor is discharged through the switch, producing a gate current "hard drive" of 1000A in about 250ns, the gate current is maintained at a high level by the freewheeling diode, and thereafter by the 5V power supply through S11;
under the action of larger gate current pulse, NPN transistor (cathode/P base region/substrate) is turned on, and N is-The emitter region is injected with electrons and is transported to N-Base region, while N-The space charge region begins to decrease as the base region produces a corresponding hole injection, and the anode voltage drops to VA200V within 100ns, where the main current is still small, meaning that the transistor action is stronger than the thyristor action. During its delay time, the anode voltage drops rapidly to 200V with a slope of 20-25 KV/. mu.s, and thus it can be considered as a nearly perfect turn-on transientAnd (6) carrying out the process.
Gate circuit during turn-off: the lower part of the circuit shown in fig. 2 controls the shut-down procedure. The capacitor C2 absorbs a large current pulse of thousands of amperes through the switch S20, the rise time of which is about 1.5 mus. In addition, switch S21 is used to maintain the blocking state of the device.
Embodiment of three-phase alternating current 380V arc-free switch intelligent chipset module
Internal structure and working principle of three-phase alternating-current 380V arc-free switch intelligent chipset module
The internal structure and the working principle of the three-phase alternating current 380V arc-free switch intelligent chipset module are shown in figure 4. As can be seen from the figure, three synchronous filtering links, three zero-crossing detection and sawtooth wave forming units, three anti-interference and pulse forming networks, a pulse generator, a pulse shaping and distributing link and a pulse power amplifying link are integrated in the driving circuit.
The brief introduction of the working principle is that the working principle of the intelligent chip set module of the three-phase alternating-current 380V arcless switch can be obtained by analyzing from the graph of figure 5, the three-phase voltage from the synchronous transformer is provided to three zero-crossing detection and sawtooth wave forming units after harmonic components superposed on the waveform are filtered by a synchronous filtering link, and the three-phase zero-crossing detection and sawtooth wave forming units detect and lock the ground zero point of the synchronous voltage. The positive and negative polarities of the synchronous voltage are identified according to the zero crossing point, and then the constant current sources integrated in the respective units are controlled according to the identified polarities so as to charge sawtooth wave capacitors in the units, and along with the periodic change of the synchronous voltage, three paths of sawtooth waves which are periodically changed and have a phase difference of 120 degrees can be obtained at the output of the three-path zero-crossing detection and sawtooth wave forming unit. The three sawtooth waves are provided for the three anti-interference and pulse forming units to be compared with a phase-shift control voltage VK input by a pin 6, a pulse forming link integrated in the three anti-interference and pulse forming units is controlled by a comparator to form trigger pulses, and the trigger pulses are modulated into pulse trains by a modulator in the pulse forming link according to the high-frequency pulse frequency (5-10 kHz) output by a pulse generator. The three pulse trains are provided for a pulse shaping and pulse distribution network for further shaping so as to improve the gradient of the front and rear edges of the pulse and form complementary pulses, and then the complementary pulses are distributed into six trigger pulses, and finally six double pulse trains which are mutually different are obtained on the output of the pulse shaping and distribution link. After the six pulse trains are subjected to power amplification by the pulse power amplification circuit, the six pulse trains are directly output at pins 22, 21, 20, 18, 17 and 16 of the driving circuit TH103, and can directly drive the pulse transformer to trigger six thyristors in the three-phase circuit.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (3)
1. The utility model provides a no arc switch intelligence chipset module which characterized in that: the thyristor comprises a thyristor chip, a controller and a load, wherein the load and the controller are connected with a thyristor chip group.
2. The arcless switch smart chipset module of claim 1, wherein: when the intelligent chip set module of the arcless switch is applied to single-phase alternating current 220V voltage, the thyristor chip is a bidirectional thyristor chip, the type of the controller is KJ008, the bidirectional thyristor chip is connected in parallel with two ends of the 220V voltage after being connected in series with a load, one end of the bidirectional thyristor chip is connected with a pin 5 of the controller through a resistor R1, a resistor R2 and a capacitor C1 which are connected in parallel are arranged between the pin 1 of the controller and the pin 5 of the controller, a thermistor R4 is connected in series with a sliding resistor R9 and then connected in parallel with a capacitor C2 and then arranged between the bidirectional thyristor chip and the pin 7 of the controller, the pin 2 of the controller is connected between a thermistor R4 and the sliding resistor R9, a voltage stabilizing diode and a resistor R3 are connected in series between the pin 8 of the controller and the 220V voltage, and the pin 3 of the controller is connected with one end of the bidirectional thyristor chip, the pin number 4, the pin number 11, and the pin number 12 of the controller are connected to each other, and the pin number 6 and the pin number 7 of the controller are connected to each other.
3. The arcless switch smart chipset module of claim 1, wherein: when the intelligent chip set module of the arcless switch is applied to three-phase alternating-current 380V voltage, the controller is in a type of TH103, the thyristor chip set comprises six thyristor chips which are respectively a thyristor chip VT1, a thyristor chip VT2, a thyristor chip VT3, a thyristor chip VT4, a thyristor chip VT5 and a thyristor chip VT6, pins numbered 16, 17, 18, 20, 21 and 22 of the controller are all connected with a pulse transformer, the thyristor chip VT1 is connected with the thyristor chip VT4 end to end, the thyristor chip VT2 is connected with the thyristor chip VT5 end to end, the thyristor chip VT3 is connected with the thyristor chip VT6 end to end, and the pulse transformer is respectively connected with the negative end of the thyristor chip VT1, the negative end of the thyristor chip VT4, the negative end of the VT2, The negative terminal of thyristor chip VT5, the negative terminal of thyristor chip VT3 and the negative terminal of thyristor chip VT6, the pin that the serial number of controller is 19 connects 24V power, and the pin that the serial number of controller is 6 connects control signal.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910940276.0A CN110676091A (en) | 2019-09-30 | 2019-09-30 | Intelligent chip set module of non-arc switch |
| CN2019109402760 | 2019-09-30 |
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| CN111696802A true CN111696802A (en) | 2020-09-22 |
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| CN201910940276.0A Withdrawn CN110676091A (en) | 2019-09-30 | 2019-09-30 | Intelligent chip set module of non-arc switch |
| CN202010684636.8A Pending CN111696802A (en) | 2019-09-30 | 2020-07-16 | Intelligent chip set module of non-arc switch |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112000167A (en) * | 2020-09-23 | 2020-11-27 | 合肥科威尔电源系统股份有限公司 | Multi-path parallel ultrahigh-speed low-voltage large-current pulse type constant current source |
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| CN1567495A (en) * | 2003-06-12 | 2005-01-19 | 上海科特高分子材料有限公司 | Arc-less switching circuit and method for switch apparatus |
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| CN112000167A (en) * | 2020-09-23 | 2020-11-27 | 合肥科威尔电源系统股份有限公司 | Multi-path parallel ultrahigh-speed low-voltage large-current pulse type constant current source |
| CN112000167B (en) * | 2020-09-23 | 2021-11-12 | 合肥科威尔电源系统股份有限公司 | Multi-path parallel ultrahigh-speed low-voltage large-current pulse type constant current source |
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| CN110676091A (en) | 2020-01-10 |
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