CN111693838A - Total dose radiation test method and device for nano field effect transistor - Google Patents
Total dose radiation test method and device for nano field effect transistor Download PDFInfo
- Publication number
- CN111693838A CN111693838A CN202010405988.5A CN202010405988A CN111693838A CN 111693838 A CN111693838 A CN 111693838A CN 202010405988 A CN202010405988 A CN 202010405988A CN 111693838 A CN111693838 A CN 111693838A
- Authority
- CN
- China
- Prior art keywords
- field effect
- radiation
- effect transistor
- obtaining
- electrical parameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention relates to a total dose radiation test method and a total dose radiation test device for a nano field effect transistor, wherein the test method comprises the following processes: providing field effect transistor devices with a statistically significant number, and carrying out a first electrical parameter test to obtain a first threshold voltage of the field effect transistor devices; carrying out a plurality of times of radiation treatment on the field effect transistor until the preset total radiation dose is reached, and carrying out a second electrical parameter test after each time of radiation treatment; performing bias processing on the field effect transistor after the radiation processing is carried out to the total radiation dose, and then performing a third electrical parameter test to obtain a third threshold voltage; and judging whether the field effect transistor device meets the product requirements or not according to the defect distribution value obtained by data processing. The test method provides an analysis method for the nano field effect transistor, and effectively solves the problems that the fluctuation amplitude is large and the traditional technology cannot accurately analyze the fluctuation amplitude caused by the quantum effect and the fluctuation effect of the nano field effect transistor.
Description
Technical Field
The invention relates to the technical field of microelectronic devices, in particular to a total dose radiation test method and a total dose radiation test device for a nano field effect transistor.
Background
The spacecraft operates in a severe strong radiation environment, and radiation in the space, including particles such as high-energy protons, alpha particles, heavy ions and electrons in a capture zone of a Galaxy cosmic ray, a solar cosmic ray and a geomagnetic field, can cause radiation effects, including cumulative radiation effects, transient radiation effects and the like, of an integrated circuit in the spacecraft, and the radiation effects can cause performance degradation and even function failure of electronic components and the integrated circuit, so that the spacecraft operates in a fault.
The total dose radiation test for the field effect transistor device in the conventional technology is mainly performed by the method 1019.2 in the national military standard GJB548B-2005 and the method provided by the aerospace standard QJ10004-2008, and the flow of the test method is shown in FIG. 1.
However, as the degree of integration of circuits increases, the feature size of a field effect transistor device, which is one of the important electronic components, also becomes smaller. When the characteristic size of the device enters the nanometer scale, the quantum effect is not negligible, and the influence difference of defects at different energy levels and positions on the electrical parameters of the device is large. Meanwhile, the number of carriers participating in conduction in a channel of a single field effect transistor device is very small, and the drastic change of the electrical parameters of the field effect transistor device, namely the fluctuation effect, can be caused by the charge and discharge (the capture and release of the carriers in the channel) of a single defect caused by total dose radiation. Referring also to fig. 2, the threshold voltage degradation of a field effect transistor device under electrical stress for a given number of gate dielectric defects is shown as a function of stress time. In the figure, N represents the average number of defects in the gate dielectric, and the number of the defects is directly related to the characteristic size of the device; the left plot has an N value of 800, corresponding to a conventional non-nano-sized device, and the right plot has an N value of 12, corresponding to a nano-device; as can be seen from FIG. 2, the device features are small in size, the number of defects is small, the fluctuation range of the threshold voltage variation with the electrical stress application time is large, and the fluctuation effect is severe.
The fluctuation effect brings great challenge to the total dose radiation test of the field effect transistor device, and the traditional test method aiming at the large-size device does not consider the quantum effect and the fluctuation problem, and the traditional test method is not applicable to the nanometer device. It is therefore desirable to provide a new test method for nano-sized field effect transistor devices.
Disclosure of Invention
Based on the above problems, an object of the present invention is to provide a total dose radiation testing method for a field effect transistor device with a characteristic dimension in the nanometer level, so as to provide a testing means for evaluating and modeling the total dose radiation effect of the nanometer level device, and further provide effective data for developing a radiation hardening resistant nanometer level integrated circuit.
According to an embodiment of the present invention, there is provided a total dose radiation testing method for a mifare field effect transistor device, including the steps of:
providing field effect transistors to be tested with statistical significance quantity, carrying out first electrical parameter test, and obtaining first threshold voltage V in initial state1；
Performing m times of radiation treatment on the field effect transistor until the preset total radiation dose is reached, performing second electrical parameter test after each time of radiation treatment, and obtaining a second threshold voltage V obtained after the nth time of radiation treatment2nWherein m is a positive integer, and n is a positive integer not greater than m;
the field effect transistor after the radiation treatment to the total radiation dose is subjected to bias treatment, and a third electrical parameter test is carried out to obtain a third threshold voltage V3；
Data processing, said data processing comprising the steps of:
a. obtaining the first voltage variation delta V of the field effect transistor after the nth radiation processingn＝V2n-V1；
b. Obtaining the first voltage variation delta V of all the field effect transistors after the nth radiation processingnMean value of (a)nAnd standard deviation σnAnd obtaining the mean value mu of m groups after radiation treatmentnAnd standard deviation σnA set of (a);
c. the mean value munAnd standard deviation σnAccording to formula
logaσ＝logaA+b×logaμ
Performing linear fitting to obtain a slope b; wherein a is any constant larger than 0, mu is a mean value, and sigma is a standard deviation;
d. obtaining a second voltage variation Δ VR＝V3-V1And obtaining an average value mu of the second voltage variation amounts of all the field effect transistorsRAnd σRAccording to formula (I)
Obtaining the average number N of defects in the gate dielectric layer of a single deviceRWherein b is the slope b in step c;
according to the formula
Obtaining a defect distribution value P (N) of the field effect transistor deviceRX), wherein e is a natural constant and x is the total number of field effect transistors;
according to the defect distribution value P (N)RAnd x) detecting whether the field effect transistor device meets preset product requirements.
In one embodiment, the field effect transistors to be tested each time for a total dose radiation test belong to the same production batch.
In one embodiment, the characteristic size of the field effect transistor to be tested is less than or equal to 28 nm.
In one embodiment, the variation of the dose rate of a single radiation is controlled not to exceed 10% during the m radiation treatments.
In one embodiment, m ≧ 5.
In one embodiment, during the m irradiation treatments, the time interval from the end of the previous irradiation to the start of the next irradiation is not more than 2 h.
In one embodiment, the bias treatment comprises an over-irradiation treatment and/or an annealing treatment.
In another aspect, according to an embodiment of the present invention, there is also provided a total dose radiation testing apparatus of a nano field effect transistor, which implements the above testing method, including:
a radiation processing member: the radiation treatment device is used for carrying out radiation treatment on the field effect transistor subjected to the first electrical parameter test for m times until the preset total radiation dose is reached, wherein m is a positive integer;
electrical parameter test component: used for executing a first electrical parameter test, a second electrical parameter test and a third electrical parameter test after the nth radiation processing and obtaining a corresponding first threshold voltage V1Second threshold voltage V after nth radiation processing2nAnd a third threshold voltage V3N is a positive integer not greater than m;
a bias processing part: the bias processing is carried out on the field effect transistor after the radiation processing is carried out to the total radiation dose;
a processor component: for data processing, said data processing comprising the steps of:
a. obtaining the first voltage variation delta V of the field effect transistor after the nth radiation processingn＝V2n-V1；
b. Obtaining the first voltage variation delta V of all the field effect transistors after the nth radiation processingnMean value of (a)nAnd standard deviation σnAnd obtaining the mean value mu of m groups after radiation treatmentnAnd standard deviation σnA set of (a);
c. the mean value munAnd standard deviation σnAccording to formula
logaσ＝logaA+b×logaμ
Performing linear fitting to obtain a slope b; wherein a is any constant larger than 0, mu is a mean value, and sigma is a standard deviation;
d. to obtainSecond voltage variation amount Δ VR＝V3-V1And obtaining an average value mu of the second voltage variation amounts of all the field effect transistorsRAnd σRAccording to formula (I)
Obtaining the average number N of defects in the gate dielectric layer of a single deviceRWherein b is the slope b in step c;
according to the formula
Obtaining a defect distribution value P (N) of the field effect transistor deviceRX), wherein e is a natural constant and x is the total number of field effect transistors;
the processor means is further for determining a defect distribution value P (N) based on the defect distribution valueRAnd x) detecting whether the field effect transistor device meets preset product requirements.
In one embodiment, the feature size of the field effect transistor to be tested is ≦ 28 nm.
In one embodiment, the field effect transistors to be tested each time for a total dose radiation test belong to the same production batch.
According to the total dose radiation test method of the nano field effect transistor, the field effect transistor devices with the statistical significance quantity are processed to obtain data, so that the fluctuation range of the measured threshold voltage variation of the devices is as small as possible, and the statistical result of the threshold voltage variation of the nano field effect transistor after radiation can reflect the quality of the nano field effect transistor more truly. Further, sequentially carrying out a first electrical parameter test, a radiation process, a second electrical parameter test, a bias process and a third electrical parameter test on the nano field effect transistor to obtain a first voltage variation and a second voltage variation, calculating a defect distribution value caused by radiation through a provided data analysis method, and judging whether the nano field effect transistor is qualified or not according to the defect distribution value; the analysis method considers the problem of the fluctuation of performance parameters of a single device caused by the obvious quantum effect and the fluctuation effect in the nanometer field effect transistor, and is a new total dose radiation test method aiming at the nanometer field effect transistor.
Drawings
FIG. 1 is a schematic flow chart of a total dose radiation test method for a large-sized field effect transistor device in the prior art;
FIG. 2 is a graph of threshold voltage degradation versus stress time for large-scale devices and small-scale devices under electrical stress;
FIG. 3 is a total dose radiation test method for nano field effect transistors according to an embodiment of the present invention;
FIG. 4 is a relationship between the average value and the variance of the variation of threshold voltage before and after radiation of the nano field effect transistor and the fluctuation range of the total number of the devices;
FIG. 5 shows more specific operating steps according to the test method shown in FIG. 3.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. "Multi", as used herein, means a combination of two or more items.
Currently, in the test flow chart shown in fig. 1, for the selection and processing of test samples, the method 1019.2 of the military standard GJB548B-2005 provides that when a total dose radiation qualification test is performed, 4 samples are selected on the B-scale, and 22 samples (11 samples if samples are obtained in the same batch of wafers) are selected on the S-scale for the test. The test samples for the total dose irradiation verification test specified in the aerospace standard QJ10004-2008 should be randomly drawn from the same batch of products in a number of not less than 11, of which 1 sample was not irradiated as a control sample.
However, the above test method only determines whether the increment of the data before and after the total dose radiation or the parameter after the total dose radiation meets the index requirement of the device, thereby determining whether the device is qualified. The testing method does not consider the problems caused by the quantum effect and the fluctuation effect of the field effect transistor device with the characteristic dimension in the nanometer scale, the fluctuation effect causes the larger difference of the total dose degradation data of different devices, the total dose testing data adopting the method cannot explain the total dose radiation resistance of batch samples, and the phenomenon of misjudgment is easy to occur.
In view of the above, according to one embodiment of the present invention, a new total dose radiation testing method for a field effect transistor with a feature size in the nanometer scale is provided, and referring to fig. 3, the method includes the following steps.
Step S100, providing field effect transistors to be tested with statistical significance quantity, carrying out first electrical parameter test, and obtaining first threshold voltage V in initial state1。
Wherein, the characteristic size of the field effect transistor is nano-scale; in a specific example of this embodiment, the feature size of the field effect transistor is ≦ 28 nm. The smaller the feature size of the field effect transistor, the less the fluctuation effect is negligible, and the less applicable the conventional testing method is.
The term "statistically significant number" means that when the number of field effect transistors is selected, the average value and the standard deviation of the differences between the threshold voltages (i.e., the variations in the threshold voltages) measured in the electrical parameter test processes before and after the irradiation process of all the field effect transistors do not fluctuate significantly as the number of field effect transistors continues to increase. For example, for MOSFET (metal oxide semiconductor field effect transistor) devices with a feature size of 28nm after a total dose of 1mrad (si) of radiation, a number of devices of at least 40 is provided, which far exceeds the requirements of conventional testing methods. Referring to fig. 4, the inventor found in the parametric test and experiment for the nano-sized MOSFET device that such a device is significantly affected by the fluctuation effect, and after the irradiation, if the number of the devices to be tested is still as the number specified in the conventional technology, the mean and standard deviation of the threshold voltage variation are significantly larger. When at least 40 devices are counted, the mean and standard deviation are small. For example, as shown in fig. 4, when counting 40 or more devices, the fluctuation range of the mean value is within 0.3%, and the fluctuation range of the standard deviation is within 1.4%, it can be considered that the test data obtained at this time has statistical significance, and the result after the total dose irradiation of the batch product can be effectively evaluated, that is, the number of MOSFET devices after the total dose irradiation of 1mrad (Si) is at least 40. It will be appreciated that the required number of "statistically significant" field effect transistor devices for other types of field effect transistor devices under other irradiation conditions may also be determined by methods similar to those described above.
It will be appreciated that the "electrical parameter" in the first electrical parameter test should be selected from at least the threshold voltage in this embodiment, as subsequent data processing of the threshold voltage is required. The input voltage corresponding to the midpoint of the transition region where the output current changes sharply with the change of the input voltage in the transfer characteristic curve is generally referred to as the threshold voltage, and has different parameters when describing different devices. For example, for a MOSFET, a state is experienced where the silicon surface electron concentration is equal to the hole concentration when the device transitions from depletion to inversion. The device is in a critical conducting state at this time, and the gate voltage of the device is defined as the threshold voltage. Of course, the technician may select other electrical parameters according to actual requirements. For example, in some other specific examples, the electrical parameter may also be selected from at least one of saturation leakage current and transconductance. Another effect of the selected electrical parameters to be tested is that devices meeting specification requirements, which may be determined by the specification of the sample, may be screened according to the electrical parameters.
It will be appreciated that when the field effect transistors undergoing the first electrical parameter test do not meet the statistically significant number, additional field effect transistors need to be replenished and the first electrical parameter test is also conducted and screened until the number of field effect transistors totals the statistically significant number.
In one specific example of the present embodiment, the field effect transistors used for the first electrical parameter test are selected from the same production lot.
Step S200, performing m times of radiation treatment on the field effect transistor until the preset total radiation dose is reached, performing second electrical parameter test after each time of radiation treatment, and obtaining a second threshold voltage V obtained after the nth time of radiation treatment2n. Wherein m is a positive integer, and n is a positive integer not greater than m.
Therein, it is to be understood that the electrical parameter in the second electrical parameter test should be at least a threshold voltage. Optionally, the electrical parameter in the second electrical parameter test should be identical to the electrical parameter in the first electrical parameter test.
The preset total radiation dose can be determined by a technician according to the actual operating environment of the device to be tested. In a specific example of the embodiment, the number of radiation is at least 5, i.e. m ≧ 5; preferably, the number of irradiations is at least 8;
in one specific example of this embodiment, the dose of each irradiation is the same. In other specific examples, however, the dose per radiation may be different; for example, the dose rate of a single radiation should not vary by more than 10% over the course of several radiations, e.g., the dose rate of the radiation varies by 0, 1%, 2%, 3%, 4%, 5%, 6%, 8% and 10%.
Considering the factors of room temperature annealing or perturbation which may be generated by natural environment, the interval from the end of the previous radiation to the beginning of the next radiation is not suitable to be too long. For example, in one specific example of the present embodiment, the interval from the end of the previous irradiation to the start of the subsequent irradiation should not exceed 2 h.
It should be appreciated that, alternatively, all field effect transistors should be operated simultaneously in the same radiation environment during each radiation treatment of the field effect transistors, thus ensuring that each field effect transistor is subjected to the same radiation condition each time, and the corresponding second threshold voltage or the variation of the threshold voltage has statistical significance. In one specific example, and the dose per radiation is the same for all field effect transistors.
Step S300, carrying out bias treatment on the field effect transistor after the radiation treatment is carried out to the total radiation dose, carrying out third electrical parameter test, and obtaining a third threshold voltage V3。
In one particular example of this embodiment, the bias process is an over-irradiation process and/or an annealing process. Over-irradiation treatment refers to 50% over-irradiation treatment; and carrying out annealing treatment after the radiation treatment. In a specific example of this embodiment, the temperature of the annealing treatment is 100 ℃ ± 50 ℃, and the annealing time is 100h to 200 h.
Wherein the electrical parameter in the third electrical parameter test should be at least a threshold voltage. Technicians can select other electrical parameters according to actual requirements; optionally, the electrical parameter in the third electrical parameter test should be identical to the electrical parameter in the first electrical parameter test.
And step S400, processing data and judging whether the field effect transistor meets the product requirement.
Specifically, the data processing includes the following steps:
a. obtaining the first voltage variation delta V of the field effect transistor after the nth radiation processingn＝V2n-V1。
b. Obtaining the first voltage variation delta V of all the field effect transistors after the nth radiation processingnMean value of (a)nAnd standard deviation σn(ii) a Mean value μnThe first threshold voltage change amount of all the devices after the radiation is summed and divided by the total number of the devices; standard deviation sigmanAlso called mean square error, the calculation method of which is carried out according to a mathematical general calculation methodPerforming calculation, which is not described herein; in addition, in actual operation, the calculation of the mean and the standard deviation can be performed quickly by means of calculation software.
Obtaining the mean value mu of m groups after radiation treatmentnAnd standard deviation σnA collection of (a). Wherein the set can be understood as { mu }1，μ2……μm}、{σ1，σ2……σmEither (mu) or (mu)1，σ1)，(μ2，σ2)……(μm，σm)}. Preferably, the latter form is more coordinate-like, which is more helpful for understanding the subsequent linear fitting process.
c. Mean value μnAnd standard deviation σnSatisfies the following formula (1):
σn＝A×μn b(1)
and (3) carrying out logarithmic operation on two sides of the formula (1) to obtain:
logaσn＝logaA+b×logaσn(2)
wherein a is the base of logarithm and can be any constant greater than 0; generally, in the calculation process, for the convenience of calculation, it may be set to 10 or e, e being a natural constant.
Obtaining the mean value munAnd standard deviation σnAfter the collection, the arithmetic operations are respectively carried out, because the mean value munAnd standard deviation σnThe logarithmically operated values satisfy a linear relationship, so that the logarithmically operated mean value mu can be obtainednAnd standard deviation σnThe set of (a) is linearly fitted according to the formula (2), and the slope obtained by the linear fitting is b in the formula (2). For example, in logaσ is ordinate, in logaMu is an abscissa, and the mean value mu after logarithmic operation is usednAnd standard deviation σnThe set of (a) is drawn on the coordinate axis as several coordinate points, and the several points are approximately in a linear relation, and all the points can be subjected to linear fitting to obtain the slope b. Generally, the process of linear fitting can be quickly accomplished by a computer.
d. Calculating a second voltage variation Δ VR＝V3-V1And calculating the average value mu of the second voltage variationRAnd σRCalculating the average number N of the defects in the gate dielectric layer of the single device according to the formula 3R。
Wherein b is the slope b of the straight line obtained by fitting in the step c.
The number of the defects contained in different field effect transistors conforms to Poisson distribution, so that the average number N of the defects in the gate dielectric layer of a single device can be determinedRCalculating a defect distribution value P (N) of the field effect transistor device according to equation (4)R，x)；
Where e is a natural constant and x is the total number of field effect transistors.
According to the calculated defect distribution value P (N) of the field effect transistor deviceRAnd x) judging whether the field effect transistor device participating in the test meets the product requirement. In a specific example of this embodiment, the calculated defect distribution value is compared with a preset distribution value, and whether the field effect transistor device under test meets the product requirement is determined. The preset distribution values can be set by a technician according to standard parameters given in a product manual of the product. For example, for the MOSFET used in the present embodiment, the predetermined distribution value can be set to 0.4-0.6.
Referring also to FIG. 5, a more detailed flowchart is shown according to one embodiment of FIG. 3, including steps S100-S400; according to the flow chart, the whole flow of the total dose radiation test method of the nano field effect transistor is more clear.
According to the flow shown in fig. 5, step S100 specifically includes the following steps.
S110, providing a field effect transistor device.
And S120, testing a first electrical parameter before radiation.
S130, judging whether the difference between the electric parameter value of the single field effect transistor and the average value of the corresponding electric parameter is smaller than a preset difference value, namely whether each field effect transistor is qualified. If the difference value is larger than the preset difference value, the field effect transistor device is judged to be unqualified, and the field effect transistor device meeting the requirement is abandoned and replenished. The number of field effect transistors to be tested should at least be up to a statistically significant number, taking into account the fluctuations in the statistical results due to the fluctuating effects.
Step S200 specifically includes the following steps.
S210, determining the radiation dose rate and the test bias; the dose rate is the irradiation dose per unit time. The bias may be selected to be the worst bias, which is the bias condition that causes the most degradation of the device, and the bias condition is selected to minimize the increase in device junction temperature to prevent annealing from occurring.
S220, performing a radiation process according to a predetermined condition.
And S230, testing the second electrical parameter after radiation.
And S240, if the total radiation dose does not meet the preset total radiation dose, repeating the step S220 and the step S230 until the preset total radiation dose is reached.
Step S300 specifically includes the following steps.
S310, 50% over-irradiation and high-temperature annealing treatment. The 50% over-irradiation is over-irradiation of 50% specified dose on the device, the high-temperature annealing condition is 100 +/-50 ℃, and the annealing time is 100-200 h.
And S320, carrying out a third electrical parameter test on the tested device.
Step S400 specifically includes the following steps.
S410, data analysis determines statistical distribution of the radiation-induced defects in the device, and please refer to the detailed analysis process in S400.
And S420, after the result is obtained through data analysis, judging whether the defect distribution value is within a preset acceptable range, namely, presetting a qualified range, if the distribution value is within the range, judging that the batch of devices to be tested is qualified, otherwise, judging that the batch of devices to be tested is unqualified.
It will be appreciated that many of the above described test parameters and processing conditions during operation may be specifically designed for different processes, different parameters of the field effect transistor, and the method or specification of the specific design is known to those skilled in the art from the prior art. For example, the method 1019.2 in the GJB548B-2005 and the method provided by the aerospace Standard QJ10004-2008 explain in detail the manner in which test conditions for different types of devices are selected and determined during the various operations provided by the method, as well as the different test requirements and corresponding conclusions that may be faced. The details provided by method 1019.2 in the GJB548B-2005 and by the aerospace Standard QJ10004-2008 are incorporated by reference into the test methods provided by the present invention. However, the method proposed by the standard does not consider the fluctuation effect caused by the high integration and miniaturization of the device nowadays, and therefore, the quality of the nanoscale field-effect transistor cannot be effectively judged. Based on the method provided by the standard, the invention carries out deep research aiming at the nano field effect transistor device, provides a method for analyzing data provided in the step S400 by adopting the nano field effect transistors with statistical significance quantity to eliminate errors of mean value and standard deviation caused by fluctuation effect as far as possible, and further provides a method for judging whether the nano field effect transistor is qualified or not, and the method has very high practical application value.
On the other hand, according to an embodiment of the present invention, there is provided a total dose radiation experimental apparatus for a nano-scale field effect transistor, which implements the above experimental method, including:
a radiation processing member: the radiation treatment device is used for carrying out radiation treatment on the field effect transistor subjected to the first electrical parameter test for m times until the preset total radiation dose is reached, wherein m is a positive integer;
electrical parameter test component: used for executing a first electrical parameter test, a second electrical parameter test and a third electrical parameter test after the nth radiation processing and obtaining a corresponding first threshold voltage V1Second threshold voltage V after nth radiation processing2nAnd a third threshold valueVoltage V3N is a positive integer not greater than m;
a bias processing part: the bias processing is carried out on the field effect transistor after the radiation processing is carried out to the total radiation dose;
a processor component: for performing data processing, the data processing comprising the steps of:
a. obtaining the first voltage variation delta V of the field effect transistor after the nth radiation processingn＝V2n-V1；
b. Obtaining the first voltage variation delta V of all the field effect transistors after the nth radiation processingnMean value of (a)nAnd standard deviation σnAnd obtaining the mean value mu of m groups after radiation treatmentnAnd standard deviation σnA set of (a);
c. the mean value munAnd standard deviation σnAccording to formula
logaσ＝logaA+b×logaμ
Performing linear fitting to obtain a slope b; wherein a is any constant larger than 0, mu is a mean value, and sigma is a standard deviation;
d. obtaining a second voltage variation Δ VR＝V3-V1And obtaining an average value mu of the second voltage variation amounts of all the field effect transistorsRAnd σRAccording to formula (I)
Obtaining the average number N of defects in the gate dielectric layer of a single deviceRWherein b is the slope b in step c;
according to the formula
Obtaining a defect distribution value P (N) of the field effect transistor deviceRX), wherein e is a natural constant and x is the total number of field effect transistors;
at the positionThe processor unit is further configured to assign a defect distribution value P (N) to the defect distribution valueRAnd x) detecting whether the field effect transistor device meets preset product requirements.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A total dose radiation test method of a nano field effect transistor is characterized by comprising the following steps:
providing field effect transistors to be tested with statistical significance quantity, carrying out first electrical parameter test, and obtaining first threshold voltage V in initial state1；
Performing m times of radiation treatment on the field effect transistor until the preset total radiation dose is reached, performing second electrical parameter test after each time of radiation treatment, and obtaining a second threshold voltage V obtained after the nth time of radiation treatment2nWherein m is a positive integer, and n is a positive integer not greater than m;
the field effect transistor after the radiation treatment to the total radiation dose is subjected to bias treatment, and a third electrical parameter test is carried out to obtain a third threshold voltage V3；
Data processing, said data processing comprising the steps of:
a. obtaining the first voltage variation delta V of the field effect transistor after the nth radiation processingn＝V2n-V1；
b. Obtaining the first voltage variation delta V of all the field effect transistors after the nth radiation processingnMean value of (a)nAnd standard deviation σnAnd obtaining the mean value mu of m groups after radiation treatmentnAnd standard deviation σnA set of (a);
c. the mean value munAnd standard deviation σnAccording to formula
logaσ＝logaA+b×logaμ
Performing linear fitting to obtain a slope b; wherein a is any constant larger than 0, mu is a mean value, and sigma is a standard deviation;
d. obtaining a second voltage variation Δ VR＝V3-V1And obtaining an average value mu of the second voltage variation amounts of all the field effect transistorsRAnd σRAccording to formula (I)
Obtaining the average number N of defects in the gate dielectric layer of a single deviceRWherein b is the slope b in step c;
according to the formula
Obtaining a defect distribution value P (N) of the field effect transistor deviceRX), wherein e is a natural constant and x is the total number of field effect transistors;
according to the defect distribution value P (N)RAnd x) detecting whether the field effect transistor device meets preset product requirements.
2. The method of claim 1, wherein the field effect transistors to be tested for total dose radiation testing each time belong to the same production lot.
3. The total dose radiation testing method of nano field effect transistors according to claim 1, wherein the characteristic size of the field effect transistor to be tested is less than or equal to 28 nm.
4. The method for total dose radiation testing of nano-fets in any one of claims 1 to 3, wherein the variation of the dose rate of a single radiation is controlled not to exceed 10% during the m radiation treatments.
5. The total dose radiation test method of the nano field effect transistor according to any one of claims 1 to 3, wherein m is not less than 5.
6. The total dose radiation test method of nano field effect transistors according to any of claims 1 to 3, wherein the time interval from the end of the previous radiation to the start of the subsequent radiation in the m radiation treatments is not more than 2 h.
7. The total dose radiation test method of a nano field effect transistor according to any one of claims 1 to 3, wherein the bias treatment comprises an over irradiation treatment and/or an annealing treatment.
8. A total dose radiation testing device of a nano field effect transistor is characterized by comprising:
a radiation processing member: the radiation treatment device is used for carrying out radiation treatment on the field effect transistor subjected to the first electrical parameter test for m times until the preset total radiation dose is reached, wherein m is a positive integer;
electrical parameter test component: used for executing a first electrical parameter test, a second electrical parameter test and a third electrical parameter test after the nth radiation processing and obtaining a corresponding first threshold voltage V1Second threshold voltage V after nth radiation processing2nAnd a third threshold voltage V3N is a positive integer not greater than m;
a bias processing part: the bias processing is carried out on the field effect transistor after the radiation processing is carried out to the total radiation dose;
a processor component: for data processing, said data processing comprising the steps of:
a. obtaining the first voltage variation delta V of the field effect transistor after the nth radiation processingn＝V2n-V1；
b. Obtaining the first voltage variation delta V of all the field effect transistors after the nth radiation processingnMean value of (a)nAnd standard deviation σnAnd obtaining the mean value mu of m groups after radiation treatmentnAnd standard deviation σnA set of (a);
c. the mean value munAnd standard deviation σnAccording to formula
logaσ＝logaA+b×logaμ
Performing linear fitting to obtain a slope b; wherein a is any constant larger than 0, mu is a mean value, and sigma is a standard deviation;
d. obtaining a second voltage variation Δ VR＝V3-V1And obtaining an average value mu of the second voltage variation amounts of all the field effect transistorsRAnd σRAccording to formula (I)
Obtaining the average number N of defects in the gate dielectric layer of a single deviceRWherein b is the slope b in step c;
according to the formula
Obtaining a defect distribution value P (N) of the field effect transistor deviceRX), wherein e is a natural constant and x is the total number of field effect transistors;
the processor means is further for determining a defect distribution value P (N) based on the defect distribution valueRX) detection stationWhether the field effect transistor device meets a preset product requirement.
9. The total dose radiation testing apparatus of nano-field effect transistor according to claim 8, wherein the characteristic dimension of the field effect transistor to be tested is less than or equal to 28 nm.
10. The total dose radiation testing apparatus of nano field effect transistors according to claim 8 or 9, wherein the field effect transistors to be tested each time for performing a total dose radiation test belong to the same production lot.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010405988.5A CN111693838B (en) | 2020-05-14 | 2020-05-14 | Total dose radiation test method and device for nano field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010405988.5A CN111693838B (en) | 2020-05-14 | 2020-05-14 | Total dose radiation test method and device for nano field effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111693838A true CN111693838A (en) | 2020-09-22 |
| CN111693838B CN111693838B (en) | 2022-08-02 |
Family
ID=72477335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010405988.5A Active CN111693838B (en) | 2020-05-14 | 2020-05-14 | Total dose radiation test method and device for nano field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111693838B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113030679A (en) * | 2021-03-05 | 2021-06-25 | 电子科技大学 | Laser simulation dosage rate effect equivalent coefficient calculation method of semiconductor device |
| CN113568028A (en) * | 2021-07-26 | 2021-10-29 | 中国科学院新疆理化技术研究所 | Aging screening method of radiation dose sensor for satellite |
| CN114460429A (en) * | 2021-11-23 | 2022-05-10 | 中国空间技术研究院 | Total dose effect test method for SiC MOSFET device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140349463A1 (en) * | 2011-12-14 | 2014-11-27 | Institute of Microelectronics, Chinese Academy of Sciences | Semiconductor structure and method for manufacturing the same |
| CN108388721A (en) * | 2018-02-08 | 2018-08-10 | 中国科学院上海微系统与信息技术研究所 | The more bias point current model modeling methods of SOI NMOS integral dose radiations |
| CN109557442A (en) * | 2018-11-23 | 2019-04-02 | 哈尔滨工业大学 | A kind of linear circuit radiation defect extracting method |
| CN110929468A (en) * | 2019-11-14 | 2020-03-27 | 北京大学 | Characterization method and application of single-particle irradiation-induced fluctuation |
| CN110927553A (en) * | 2019-12-13 | 2020-03-27 | 西安电子科技大学 | Experimental analysis method for total dose effect defect distribution of germanium-silicon heterojunction bipolar transistor |
| CN110968960A (en) * | 2019-12-13 | 2020-04-07 | 西安电子科技大学 | Method and device for determining total dose effect defect model |
-
2020
- 2020-05-14 CN CN202010405988.5A patent/CN111693838B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140349463A1 (en) * | 2011-12-14 | 2014-11-27 | Institute of Microelectronics, Chinese Academy of Sciences | Semiconductor structure and method for manufacturing the same |
| CN108388721A (en) * | 2018-02-08 | 2018-08-10 | 中国科学院上海微系统与信息技术研究所 | The more bias point current model modeling methods of SOI NMOS integral dose radiations |
| CN109557442A (en) * | 2018-11-23 | 2019-04-02 | 哈尔滨工业大学 | A kind of linear circuit radiation defect extracting method |
| CN110929468A (en) * | 2019-11-14 | 2020-03-27 | 北京大学 | Characterization method and application of single-particle irradiation-induced fluctuation |
| CN110927553A (en) * | 2019-12-13 | 2020-03-27 | 西安电子科技大学 | Experimental analysis method for total dose effect defect distribution of germanium-silicon heterojunction bipolar transistor |
| CN110968960A (en) * | 2019-12-13 | 2020-04-07 | 西安电子科技大学 | Method and device for determining total dose effect defect model |
Non-Patent Citations (3)
| Title |
|---|
| BRUCE DRAPER ET AL.: "Radiation Response of a Gate-All-Around Silicon Nano-Wire Transistor", 《IEEE TRANSACTIONS ON NUCLEAR SCIENCE》, vol. 56, no. 6, 31 December 2009 (2009-12-31), pages 3274 - 3279, XP011285387, DOI: 10.1109/TNS.2009.2033917 * |
| 李应辉等: "光电耦合器总剂量辐照的噪声表征", 《电子学报》, no. 08, 15 August 2009 (2009-08-15), pages 1707 - 1711 * |
| 皇甫丽英 等: "MOS场效应晶体管辐照特性的实验研究", 《实验技术与管理》, vol. 23, no. 3, 31 March 2006 (2006-03-31), pages 38 - 40 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113030679A (en) * | 2021-03-05 | 2021-06-25 | 电子科技大学 | Laser simulation dosage rate effect equivalent coefficient calculation method of semiconductor device |
| CN113030679B (en) * | 2021-03-05 | 2022-01-28 | 电子科技大学 | Laser simulation dosage rate effect equivalent coefficient calculation method of semiconductor device |
| CN113568028A (en) * | 2021-07-26 | 2021-10-29 | 中国科学院新疆理化技术研究所 | Aging screening method of radiation dose sensor for satellite |
| CN113568028B (en) * | 2021-07-26 | 2023-12-15 | 中国科学院新疆理化技术研究所 | Aging screening method of satellite radiation dose sensor |
| CN114460429A (en) * | 2021-11-23 | 2022-05-10 | 中国空间技术研究院 | Total dose effect test method for SiC MOSFET device |
| WO2023093499A1 (en) * | 2021-11-23 | 2023-06-01 | 中国空间技术研究院 | Method for testing total dose effect of sic mosfet device |
| CN114460429B (en) * | 2021-11-23 | 2023-08-01 | 中国空间技术研究院 | Method for testing total dose effect of SiC MOSFET device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111693838B (en) | 2022-08-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111693838B (en) | Total dose radiation test method and device for nano field effect transistor | |
| Wu et al. | Challenges for accurate reliability projections in the ultra-thin oxide regime | |
| Wu et al. | Ultra-thin oxide reliability for ULSI applications | |
| Wu et al. | Experimental evidence of T/sub BD/power-law for voltage dependence of oxide breakdown in ultrathin gate oxides | |
| Hicks et al. | 45nm Transistor Reliability. | |
| Mahapatra et al. | Isolation of NBTI stress generated interface trap and hole-trapping components in PNO p-MOSFETs | |
| Gamiz et al. | Universality of electron mobility curves in MOSFETs: A Monte Carlo study | |
| Ji et al. | NBTI lifetime prediction and kinetics at operation bias based on ultrafast pulse measurement | |
| US11525857B2 (en) | Method for characterizing fluctuation induced by single particle irradiation in a device and application thereof | |
| Fleetwood | Effects of bias and temperature on interface-trap annealing in MOS and linear bipolar devices | |
| Minami et al. | Circuit-level simulation of TDDB failure in digital CMOS circuits | |
| US6524872B1 (en) | Using fast hot-carrier aging method for measuring plasma charging damage | |
| CN114460429B (en) | Method for testing total dose effect of SiC MOSFET device | |
| Ogden et al. | Charge transport model to predict dielectric breakdown as a function of voltage, temperature, and thickness | |
| CN106898546B (en) | Method for monitoring Ge ion implantation quality | |
| Hiraiwa et al. | Scaling law in ULSI contamination control | |
| RU2466417C1 (en) | Method of selecting cmos/soi transistor structures resistant to effect of full absorbed dose of ionising radiation | |
| CN115238561A (en) | Method for researching SiC MOSFET ionization total amount and single-particle burnout synergistic effect | |
| Moskovskaya et al. | Process parameters variations influence on CMOS IC's hardness to total ionizing dose | |
| CN111579957B (en) | Total dose radiation test method, device and equipment for nano MOSFET device | |
| Chabrerie et al. | Isothermal and isochronal annealing methodology to study post-irradiation temperature activated phenomena | |
| Sung et al. | Statistical prediction of nanosized-metal-grain-induced threshold-voltage variability for 3D vertically stacked silicon gate-all-around nanowire n-MOSFETs | |
| RU2082178C1 (en) | Method for selecting plates with radiation-resistant mos integrated circuits | |
| CN113297732A (en) | Method for constructing analysis model for correlation between trapped charges and noise amplitude | |
| Voltine et al. | Study of the Impact on the Radiation Design Margin of the Statistical Distributions used to analyze Radiation Degradation Data |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |