CN111682045A - Ultrasonic fingerprint identification sensor, manufacturing method thereof and display module - Google Patents
Ultrasonic fingerprint identification sensor, manufacturing method thereof and display module Download PDFInfo
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- CN111682045A CN111682045A CN202010582074.6A CN202010582074A CN111682045A CN 111682045 A CN111682045 A CN 111682045A CN 202010582074 A CN202010582074 A CN 202010582074A CN 111682045 A CN111682045 A CN 111682045A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 239000010410 layer Substances 0.000 claims description 183
- 239000002184 metal Substances 0.000 claims description 41
- 239000010409 thin film Substances 0.000 claims description 28
- 239000010408 film Substances 0.000 claims description 25
- 230000010287 polarization Effects 0.000 claims description 17
- 238000002955 isolation Methods 0.000 claims description 10
- 239000011229 interlayer Substances 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 239000011368 organic material Substances 0.000 claims description 3
- 230000005684 electric field Effects 0.000 description 15
- 238000010586 diagram Methods 0.000 description 10
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- 238000000034 method Methods 0.000 description 5
- 239000002033 PVDF binder Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
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Abstract
The invention relates to an ultrasonic fingerprint identification sensor which comprises a hard substrate, a flexible substrate arranged on the hard substrate, a receiving electrode layer, a piezoelectric film layer and a transmitting electrode layer which are sequentially arranged on the flexible substrate, and a first bonding pad arranged between the hard substrate and the flexible substrate, wherein the first bonding pad is used for binding and connecting the receiving electrode layer and an external circuit board to obtain a fingerprint image. The invention also relates to a manufacturing method of the display module and the ultrasonic fingerprint identification sensor.
Description
Technical Field
The invention relates to the technical field of display product manufacturing, in particular to an ultrasonic fingerprint identification sensor, a manufacturing method thereof and a display module.
Background
Piezoelectric materials (such as polyvinylidene fluoride, PVDF, piezoelectric ceramics, electrets and the like), for example, PVDF is an excellent piezoelectric material, has piezoelectric effect after crystallization and electric field polarization, and is divided into positive piezoelectric effect and inverse piezoelectric effect, by utilizing the principle, AC voltage is applied to a transmitting electrode (Tx), and a piezoelectric film layer generates ultrasonic waves, electricity → sound under the action of inverse piezoelectric; then the ultrasonic wave meets the finger fingerprint and reflects, acts on the piezoelectric film layer again, converts the ultrasonic wave into an electric signal, sound → electricity, and because of the difference of ridge and valley reflection signals, the receiving electrode (Rx) and the received electric charge are different, the fingerprint identification is realized.
The piezoelectric film layer is required to be subjected to electric polarization treatment to generate a good piezoelectric effect, and the polarization aims to enable disordered molecular dipole electric moments in the piezoelectric film layer to be uniformly oriented along a specific direction (a polarization electric field direction) so as to improve and enhance the piezoelectricity of the piezoelectric film layer. The electric polarization utilizes a corona discharge which causes local breakdown of air by a non-uniform electric field to generate ion beams to bombard the dielectric medium and deposit ion charges in the dielectric medium, thereby achieving a better polarization effect.
The ultrasonic fingerprint identification sensor comprises a binding pad, an electric signal received by the receiving electrode is processed (for example, amplified) through the TFT circuit and then is transmitted to an external circuit board through the binding pad so as to identify a fingerprint image, and during polarization, if a polarization electric field is in direct contact with the binding pad, an electron cloud (Plasma) flows away along the binding pad, and even breaks down the TFT circuit. At present, the shielding layer is arranged to avoid the contact between the binding pad and the polarized electric field, but the shielding layer is made of non-metal materials, is easy to deform and cannot realize large-size display, a hollow area needs to be arranged on the shielding layer to expose an effective display area of the display panel, the arrangement of the hollow area is generally realized by adopting a machining mode, and alignment deviation is easy to occur.
Disclosure of Invention
In order to solve the technical problems, the invention provides an ultrasonic fingerprint identification sensor, a manufacturing method thereof and a display module, which solve the problems that the bonding pad is prevented from contacting with a polarized electric field, so that the size cannot be increased and alignment deviation is easy to generate.
In order to achieve the purpose, the embodiment of the invention adopts the technical scheme that: the utility model provides an ultrasonic fingerprint identification sensor, includes the stereoplasm base plate, set up in flexible substrate on the stereoplasm base plate to and set gradually receiving electrode layer, piezoelectric film layer and the transmitting electrode layer on the flexible substrate, still including set up in the stereoplasm base plate with first pad between the flexible substrate, first pad be used for with receiving electrode layer binds with external circuit board and is connected, in order to obtain the fingerprint image.
Optionally, an isolation layer made of an organic material is disposed between the first pad and the hard substrate.
Optionally, the receiving electrode layer includes a thin film transistor disposed on the flexible substrate and a receiving electrode connected to the thin film transistor.
Optionally, the thin film transistor includes an active layer, a gate insulating layer, a gate layer, an interlayer insulating layer, a source drain layer, and a planarization layer, which are sequentially disposed on the flexible substrate, and further includes a first metal connection line disposed on the same layer as the source drain layer, where the first metal connection line is used to connect the first pad with the source drain layer.
Optionally, a first insulating layer and a buffer layer are disposed between the flexible substrate and the receiving electrode layer along a direction away from the flexible substrate.
Optionally, a second metal connection line is arranged on the first insulating layer, the second metal connection line is connected with the first pad through a via hole, and the first metal connection line is connected with the first pad through the second metal connection line.
Optionally, the display device further includes a second pad disposed on the same layer as the source/drain electrode layer, and configured to connect the emitter electrode layer with an external circuit board, so as to provide a voltage to the emitter electrode layer.
Optionally, the device further includes a polarization line disposed in the same layer as the source/drain layer, so that the receiving electrode is grounded to be at a zero potential.
The embodiment of the invention also provides a display module which comprises a display panel and the ultrasonic fingerprint identification sensor arranged on the backlight side of the display panel.
The embodiment of the invention also provides a manufacturing method of the ultrasonic fingerprint identification module, which comprises the following steps:
forming an isolation layer on a hard substrate;
forming a first pad on the isolation layer;
forming a flexible substrate;
sequentially forming a thin film transistor and a receiving electrode on the flexible substrate, wherein the receiving electrode and the first bonding pad are respectively connected with the thin film transistor;
forming a piezoelectric film layer;
an emitter electrode layer is formed.
Optionally, the forming a thin film transistor and a receiving electrode on the flexible substrate in sequence specifically includes the following steps:
forming a polysilicon active layer;
forming a gate insulating layer;
forming a gate layer;
forming an interlayer insulating layer;
forming a source drain layer and a first metal connecting line, wherein the source drain layer is connected with the active layer through a through hole, and the first metal connecting line is connected with the first bonding pad through a through hole;
forming a flat layer;
forming a receiving electrode, wherein the receiving electrode is connected with the source drain layer through a through hole;
optionally, the method further comprises the following steps:
forming a first insulating layer;
forming a second metal connection line connecting the first metal connection line and the first pad.
The invention has the beneficial effects that: the arrangement position of the first bonding pad is arranged between the hard substrate and the flexible substrate, the first bonding pad is prevented from contacting with a polarized electric field, and compared with a related ultrasonic fingerprint identification sensor, the arrangement of a shielding layer is omitted, so that the problems that the related ultrasonic fingerprint identification sensor cannot be large-sized due to the arrangement of the shielding layer and the like are solved.
Drawings
FIG. 1 is a schematic diagram of an ultrasonic fingerprint sensor according to the related art;
FIG. 2 is a schematic diagram of an ultrasonic fingerprint sensor according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of the first bonding pad after being formed in the embodiment of the invention;
FIG. 4 is a schematic diagram of a flexible substrate after formation of an embodiment of the invention;
FIG. 5 is a schematic structural diagram illustrating the formation of a second metal interconnection line according to an embodiment of the invention;
FIG. 6 is a schematic diagram illustrating a structure after an active layer is formed according to an embodiment of the present invention;
FIG. 7 is a schematic diagram illustrating a structure of a gate layer after forming the gate layer according to an embodiment of the invention;
FIG. 8 is a schematic structural diagram after a source/drain layer is formed in an embodiment of the present invention;
FIG. 9 is a schematic view showing a structure after forming a receiving electrode according to an embodiment of the present invention;
fig. 10 is a schematic structural view after a piezoelectric film layer is formed in the embodiment of the invention;
FIG. 11 is a schematic structural view after a piezoelectric thin film layer is formed in the embodiment of the invention;
FIG. 12 is a schematic diagram illustrating a structure of a metal hard mask layer after being formed according to an embodiment of the present invention;
FIG. 13 is a schematic diagram of a structure after photoresist is formed in an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention, are within the scope of the invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
The ultrasonic fingerprint identification sensor comprises a piezoelectric film layer 1, and a transmitting electrode (not shown) and a receiving electrode 3 which are arranged on two opposite sides of the piezoelectric film layer 1, and further comprises a binding pad 2 which is used for transmitting a signal received by the receiving electrode 3 to an external circuit for fingerprint identification, as shown in fig. 1, the binding pad 2 is exposed and is easy to contact with a polarization electric field, if the polarization electric field is in direct contact with the binding pad 2, an electron cloud (Plasma) flows away along the binding pad, and even breaks down a TFT circuit (a TFT circuit 20 which is directly connected with the receiving electrode 3, and the TFT circuit 20 comprises a source electrode, a drain electrode 4 and a grid electrode 5). At present, the shielding layer 10 is arranged to avoid the contact between the bonding pad 2 and the polarized electric field, but the shielding layer 10 is made of a non-metal material and is easy to deform, the flatness requirement of the shielding layer 10 is higher and is generally smaller than 1mm, large-size formation cannot be realized on the premise of ensuring the yield, a hollow area (an area right above the piezoelectric film layer 1) needs to be arranged on the shielding layer 10 to expose an effective display area of the display panel, the arrangement of the hollow area is generally realized by adopting a mechanical processing mode, and alignment deviation is easy to occur.
To solve the above technical problem, this embodiment provides an ultrasonic fingerprint recognition sensor, refer to fig. 2, including stereoplasm base plate 1, set up in flexible substrate 2 on the stereoplasm base plate 1 to and set gradually receiving electrode layer 10, piezoelectric film layer 12 and transmitting electrode layer 11 on flexible substrate 2, still including set up in stereoplasm base plate 1 with first pad 15 between the flexible substrate 2, first pad 15 is used for with receiving electrode layer 10 is bound with external circuit board and is connected in order to obtain the fingerprint image.
In this embodiment, by using the structure of the ultrasonic fingerprint sensor, the first bonding pad 15 is manufactured between the hard substrate 1 and the flexible substrate 2, when the ultrasonic fingerprint sensor is applied to electronic devices such as a display module, the hard substrate 1 needs to be removed, which is equivalent to that the first bonding pad 15 is arranged on the back of the ultrasonic fingerprint sensor, and the transmitting electrode layer 11, the receiving electrode layer 10 and the piezoelectric film layer 12 are located on the front side of the ultrasonic fingerprint sensor, that is, the transmitting electrode layer 11, the receiving electrode layer 10 and the piezoelectric film layer 12 are located on the first side of the flexible substrate 2, the first bonding pad 15 is located on the second side of the flexible substrate 2 opposite to the first side, so that the exposed arrangement of the first bonding pad 15 is avoided, and a polarization electric field (an electric field generated between the transmitting electrode layer 11 and the receiving electrode layer 10) and the polarization electric field are prevented Compared with the structure of the ultrasonic fingerprint sensor in the related art shown in fig. 1, the contact of the first bonding pad 15 omits the arrangement of the shielding layer, so that the problems that the shielding layer cannot be large-sized and the like are avoided.
In this embodiment, an isolation layer 16 made of an organic material is disposed between the first pad 15 and the hard substrate 1, and refer to fig. 2 and 3.
When the ultrasonic fingerprint identification sensor is applied, the hard substrate 1 needs to be removed, the first bonding pad 15 and the hard substrate 1 are high in adhesion, the first bonding pad 15 is easily peeled off together when the hard substrate 1 is removed, and the isolation layer 16 protects the first bonding pad 15 and prevents the hard substrate 1 from being removed and the first bonding pad 15 from being affected.
In this embodiment, the receiving electrode layer 10 includes a thin film transistor 8 disposed on the flexible substrate 2 and a receiving electrode 9 connected to the thin film transistor 8, referring to fig. 2, 7 to 10.
The ultrasonic wave reflected by the finger fingerprint is converted into an electric signal after passing through the piezoelectric film 12, the receiving electrode 9 receives the electric signal, and after the electric signal is processed (for example, amplified) by the thin film transistor 8, the electric signal is transmitted to an external circuit board through the first bonding pad 15 for fingerprint identification.
In this embodiment, the thin film transistor 8 includes an active layer 81, a gate insulating layer 5, a gate layer 83, an interlayer insulating layer 6, a source drain layer 82, and a planarization layer 20, which are sequentially disposed on the flexible substrate 2, and further includes a first metal connection line 14 disposed on the same layer as the source drain layer 82, where the first metal connection line 14 is used to connect the first pad 15 and the source drain layer 82.
The first metal connecting line 14 is connected to the first pad 15 through a via hole, so that transmission of signals between the thin film transistor 8 and the first pad 15 is realized.
In this embodiment, a first insulating layer 3 and a buffer layer 4 are provided between the flexible substrate 2 and the receiving electrode layer 10 in a direction away from the flexible substrate 2.
The first insulating layer 3 and the buffer layer 4 are arranged to play a role in protection, and the buffer layer 4 is additionally arranged to further avoid water and oxygen invasion.
In this embodiment, a second metal connection line 17 is disposed on the first insulating layer 3, the second metal connection line 17 is connected to the first pad 15 through a via hole, and the first metal connection line 14 is connected to the first pad 15 through the second metal connection line 17.
The second metal connecting line 17 is arranged, so that the extending direction of the first metal connecting line 14 can be perpendicular to the hard substrate, the connection between the first metal connecting line 14 and the first bonding pad 15 is facilitated, and the process difficulty is reduced.
In this embodiment, the ultrasonic fingerprint identification sensor further includes a second pad 7 disposed on the same layer as the source/drain layer 82, and configured to connect the emitter electrode layer 11 with an external circuit board, so as to provide a voltage to the emitter electrode layer 11.
The second bonding pad 7 is arranged to realize binding connection of the emitting electrode layer 11 and an external circuit board so as to apply voltage to the emitting electrode layer 11.
In this embodiment, the ultrasonic fingerprint identification sensor further includes a polarization line 13 disposed on the same layer as the source/drain layer 82, so that the receiving electrode 9 is grounded to be at a zero potential.
The transmitting electrode layer 11 is applied with an ac voltage, and the receiving electrode 9 is at a fixed potential (for example, 0 potential), so that a potential difference and a strong electric field are formed on the surface of the piezoelectric film 12, the piezoelectric film 12 deforms to generate an ultrasonic wave, and the polarization wire 13 ensures that the receiving electrode 9 is at the fixed potential, so as to ensure that the piezoelectric film 12 generates the ultrasonic wave.
When using, ultrasonic wave fingerprint identification sensor includes a plurality of fingerprint identification units to the effective display area who corresponds a plurality of display module assembly carries out parallel connection's effect with the receiving electrode 9 among a plurality of fingerprint identification units who corresponds a plurality of effective display areas, in order to provide 0 electric potential in unison.
The embodiment of the invention also provides a display module which comprises a display panel and the ultrasonic fingerprint identification sensor arranged on the backlight side of the display panel.
Above-mentioned ultrasonic fingerprint identification sensor's setting through with first pad 15 set up in flexible substrate 2 keeps away from one side of piezoelectricity rete 12 prevents first pad 15 and the contact of polarization electric field, and for naked structure that sets up first pad 15, saved and be used for sheltering from the setting of the shielding layer of first pad 15 avoids because the setting of shielding layer and can't realize jumbo size ization, and the inaccurate problem of counterpointing.
The embodiment of the invention also provides a manufacturing method of the ultrasonic fingerprint identification module, which comprises the following steps:
forming a spacer layer 16 on the hard substrate 1;
forming a first pad 15 on the isolation layer 16, referring to fig. 3;
forming a flexible substrate 2, refer to fig. 4;
forming a thin film transistor 8 and a receiving electrode 9 in sequence on the flexible substrate 2, wherein the receiving electrode 9 and the first pad 15 are respectively connected with the thin film transistor 8, and referring to fig. 5-9;
forming a piezoelectric film layer 12, refer to fig. 10;
the emitter electrode layer 11 is formed, referring to fig. 2.
In this embodiment, the forming of the thin film transistor 8 and the receiving electrode 9 on the flexible substrate 2 in sequence specifically includes the following steps:
forming a polysilicon active layer 81, and referring to fig. 6, the specific structural form of the active layer 81 may be P type, N type, and P-N type, the P type active layer 81 includes a P type doped region, a polysilicon region, and a P type doped region sequentially arranged in a direction parallel to the hard substrate 1, the N type active layer 81 includes an N type doped region, a polysilicon region, and an N type doped region sequentially arranged in a direction parallel to the hard substrate 1, and the P-N type active layer includes a P type doped region, a polysilicon region, and an N type doped region sequentially arranged in a direction parallel to the hard substrate 1.
Forming a gate insulating layer 5, referring to fig. 7;
forming a gate layer 83, refer to fig. 7;
forming an interlayer insulating layer 6, refer to fig. 8;
forming a source drain layer 82 and a first metal connection line 14, wherein the source drain layer 82 is connected with the active layer 81 through a via hole, and the first metal connection line 14 is connected with the first pad 15 through a via hole, referring to fig. 8;
forming a planarization layer 20, refer to fig. 9;
forming a receiving electrode 9, wherein the receiving electrode 9 is connected with the source drain layer 82 through a via hole, and referring to fig. 9;
in this embodiment, the method further includes the following steps:
forming a first insulating layer 3, refer to fig. 5;
a second metal connection line 17 is formed, the second metal connection line 17 connecting the first metal connection line 14 and the first pad 15, refer to fig. 6.
In this embodiment, after forming the first insulating layer 3, forming a buffer layer 4 on the first insulating layer 3 is further included, referring to fig. 7.
In this embodiment, before forming the piezoelectric film layer 12, forming an isolation insulating layer 21 on the planarization layer 20 is further included.
In this embodiment, the formation of the piezoelectric film 12 may be formed by a patterning process in one step, and may also include the following steps:
forming a piezoelectric thin film layer by using a piezoelectric material (for example, PVDF), and referring to fig. 11, the piezoelectric thin film layer is formed by a whole surface film, and the piezoelectric thin film layer includes a reserved region covering the receiving electrode layer 10 and a removed region covering the second pad 7;
forming a metal hard mask layer 18 on the piezoelectric thin film layer, referring to fig. 12;
forming a photoresist 19 on the metal hard mask layer 18, wherein an orthographic projection of the photoresist 19 on the piezoelectric thin film layer is located in a reserved area of the piezoelectric thin film layer, referring to fig. 13;
the removal region of the piezoelectric thin film layer is removed by a photolithography process, and the piezoelectric film layer 12 is formed, referring to fig. 10.
The material of the metal hard mask layer is preferably an Al-based material, for example: MoAlNdMo, MoAlMo.
In this embodiment, the emitting electrode layer 11 is made of Ag metal, but not limited thereto.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (12)
1. The utility model provides an ultrasonic fingerprint identification sensor, includes the stereoplasm base plate, set up in flexible substrate on the stereoplasm base plate to and set gradually receiving electrode layer, piezoelectric film layer and the transmitting electrode layer on the flexible substrate, its characterized in that, still including set up in the stereoplasm base plate with first pad between the flexible substrate, first pad be used for with receiving electrode layer binds with external circuit board and is connected, in order to obtain the fingerprint image.
2. The ultrasonic fingerprint sensor according to claim 1, wherein an isolation layer made of an organic material is disposed between the first pad and the hard substrate.
3. The ultrasonic fingerprint recognition sensor of claim 1, wherein the receiving electrode layer comprises a thin film transistor disposed on the flexible substrate and a receiving electrode connected to the thin film transistor.
4. The ultrasonic fingerprint sensor of claim 3, wherein the thin film transistor comprises an active layer, a gate insulating layer, a gate layer, an interlayer insulating layer, a source drain layer and a flat layer which are sequentially arranged on the flexible substrate, and further comprises a first metal connecting wire arranged in the same layer as the source drain layer, and the first metal connecting wire is used for connecting the first pad with the source drain layer.
5. The ultrasonic fingerprint recognition sensor according to claim 4, wherein a first insulating layer and a buffer layer are disposed between the flexible substrate and the receiving electrode layer in a direction away from the flexible substrate.
6. The ultrasonic fingerprint sensor of claim 5, wherein a second metal connecting line is disposed on the first insulating layer, the second metal connecting line is connected to the first pad through a via, and the first metal connecting line is connected to the first pad through the second metal connecting line.
7. The ultrasonic fingerprint recognition sensor of claim 4, further comprising a second pad disposed in a same layer as the source and drain electrode layers for connecting the emitter electrode layer with an external circuit board to supply a voltage to the emitter electrode layer.
8. The ultrasonic fingerprint recognition sensor according to claim 4, further comprising a polarization line disposed in the same layer as said source drain layer, such that said receiving electrode is grounded to be at zero potential.
9. A display module, comprising a display panel, and the ultrasonic fingerprint sensor according to any one of claims 1 to 8 disposed on a backlight side of the display panel.
10. A manufacturing method of an ultrasonic fingerprint identification sensor is characterized by comprising the following steps:
forming an isolation layer on a hard substrate;
forming a first pad on the isolation layer;
forming a flexible substrate;
sequentially forming a thin film transistor and a receiving electrode on the flexible substrate, wherein the receiving electrode and the first bonding pad are respectively connected with the thin film transistor;
forming a piezoelectric film layer;
an emitter electrode layer is formed.
11. The method of manufacturing an ultrasonic fingerprint recognition sensor according to claim 10,
sequentially forming a thin film transistor and a receiving electrode on the flexible substrate, and specifically comprising the following steps:
forming a polysilicon active layer;
forming a gate insulating layer;
forming a gate layer;
forming an interlayer insulating layer;
forming a source drain layer and a first metal connecting line, wherein the source drain layer is connected with the active layer through a through hole, and the first metal connecting line is connected with the first bonding pad through a through hole;
forming a flat layer;
and forming a receiving electrode, wherein the receiving electrode is connected with the source drain electrode layer through a through hole.
12. The method of manufacturing an ultrasonic fingerprint recognition sensor according to claim 11, further comprising the steps of:
forming a first insulating layer;
forming a second metal connection line connecting the first metal connection line and the first pad.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010582074.6A CN111682045B (en) | 2020-06-23 | 2020-06-23 | Ultrasonic fingerprint identification sensor, manufacturing method thereof and display module |
| PCT/CN2021/101507 WO2021259248A1 (en) | 2020-06-23 | 2021-06-22 | Ultrasonic fingerprint recognition sensor and manufacturing method therefor, and display module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010582074.6A CN111682045B (en) | 2020-06-23 | 2020-06-23 | Ultrasonic fingerprint identification sensor, manufacturing method thereof and display module |
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| Publication Number | Publication Date |
|---|---|
| CN111682045A true CN111682045A (en) | 2020-09-18 |
| CN111682045B CN111682045B (en) | 2022-06-21 |
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| CN202010582074.6A Active CN111682045B (en) | 2020-06-23 | 2020-06-23 | Ultrasonic fingerprint identification sensor, manufacturing method thereof and display module |
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| WO (1) | WO2021259248A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113642485A (en) * | 2021-08-18 | 2021-11-12 | 云谷（固安）科技有限公司 | Display panel and display device |
| WO2021259248A1 (en) * | 2020-06-23 | 2021-12-30 | 京东方科技集团股份有限公司 | Ultrasonic fingerprint recognition sensor and manufacturing method therefor, and display module |
| US11438703B2 (en) * | 2019-06-27 | 2022-09-06 | Qualcomm Incorporated | Ultrasonic sensor array |
| WO2023102954A1 (en) * | 2021-12-07 | 2023-06-15 | 武汉华星光电半导体显示技术有限公司 | Display device |
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| CN115546851A (en) * | 2022-09-30 | 2022-12-30 | 深圳市汇顶科技股份有限公司 | Ultrasonic fingerprint sensor, preparation method thereof and electronic equipment |
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| WO2021259248A1 (en) | 2021-12-30 |
| CN111682045B (en) | 2022-06-21 |
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