CN111653553B - Si-based GaN millimeter wave transmission line structure and preparation method thereof - Google Patents
Si-based GaN millimeter wave transmission line structure and preparation method thereof Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/001—Manufacturing waveguides or transmission lines of the waveguide type
- H01P11/003—Manufacturing lines with conductors on a substrate, e.g. strip lines, slot lines
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/003—Coplanar lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
Abstract
The invention discloses a structure and a preparation method of a Si-based GaN millimeter wave transmission line, wherein the structure comprises the following steps: a Si substrate; an AlN nucleation layer over the Si substrate; a group III nitride transition layer over the AlN nucleation layer; a GaN buffer layer over the group III nitride transition layer; a metal layer over the GaN buffer layer; a dielectric insertion layer over the metal formation; CPW over the dielectric insertion layer; the ground line of the CPW is connected to the metal formation through a via in the dielectric insertion layer. The invention aims to solve the problem of higher radio frequency loss of a transmission line in millimeter wave circuit application, and provides a transmission line structure on a Si-based GaN structure facing millimeter wave application and a preparation method thereof.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a Si-based GaN millimeter wave transmission line structure and a preparation method thereof.
Background
The third-generation semiconductor material GaN has the advantages of wide forbidden bandwidth, high critical breakdown field strength, high electron mobility and high saturated electron drift velocity, has great development potential in the field of microwave millimeter wave high-power electronic devices, and can be widely applied to the fields of aerospace, radar, 5G communication and the like. In addition, compared with the sapphire-based GaN material and the SiC-based GaN structure, the Si-based GaN structure has the advantages of large wafer size, low cost and compatibility with the Si-based CMOS (Complementary Metal Oxide Semiconductor ) process, and is beneficial to promoting the large-scale commercial application of GaN microwave millimeter wave power devices.
However, in the epitaxial process of the Si-based GaN structure, al and Ga atoms in the iii-v nitride epitaxial layer diffuse into the Si substrate to form p-type doping, and a p-type conduction channel is formed at the AlN/Si interface, which causes high radio frequency loss to the Si-based GaN structure epitaxial wafer. In addition, the AlN nucleation layer and the buffer layer also introduce radio frequency loss. And the higher radio frequency loss of the Si-based GaN structure reduces the performance of the Si-based GaN structure radio frequency device.
CPW (Coplanar Waveguide ) is one of the most important planar transmission lines, and as the signal line and the ground line of CPW are on the same plane, the CPW is widely used in microwave and millimeter wave circuits because of its simple manufacturing process and easy integration in a monolithic circuit, as shown in fig. 1. However, due to the high radio frequency loss of the Si-based GaN structure, the radio frequency loss of the CPW fabricated on the Si-based GaN structure is high in millimeter wave application, resulting in excessive microwave energy loss and reduced radio frequency performance of the circuit, which makes it difficult to satisfy the wide application in the fields of aerospace, radar, 5G communication, and the like. Therefore, in order to satisfy the application of the transmission line in the millimeter wave circuit, it is necessary to design a new transmission line with low loss. Referring to fig. 2, in order to reduce radio frequency loss of the transmission line, a transmission line of GCPW (ground coplanar waveguide) structure is proposed, that is, a metal ground is prepared on the back surface of the Si substrate, so that dissipation loss of microwave energy in the transmission line at the bottom of the Si-based GaN structure can be blocked, and radio frequency loss of the transmission line is reduced.
Although the preparation of the metal ground on the back surface of the Si substrate reduces a part of energy loss, the loss of the transmission line of the GCPW structure is still high due to the influence of a p-type conduction channel, an AlN nucleation layer and a buffer layer at an AlN/Si interface in the Si-based GaN structure, and the transmission line is insufficient to meet the application requirement of the transmission line in a millimeter wave circuit, and the preparation process is complex due to the fact that the metal ground on the back surface of the Si substrate needs to be connected with the bottom line of the CPW.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a structure and a preparation method of a Si-based GaN millimeter wave transmission line. The technical problems to be solved by the invention are realized by the following technical scheme:
a structure of a Si-based GaN millimeter wave transmission line, comprising:
a Si substrate;
an AlN nucleation layer on the Si substrate;
a group III nitride transition layer on the AlN nucleation layer;
a GaN layer on the group III nitride transition layer;
a metal ground on the GaN layer;
the medium inserting layer is provided with a plurality of through holes and is positioned on the metal ground;
and the CPWs are positioned on the medium insertion layer, and each CPW is correspondingly connected with the metal ground through one through hole.
A preparation method of a Si-based GaN millimeter wave transmission line structure comprises the following steps:
selecting a Si substrate;
preparing an AlN nucleation layer on the Si substrate;
preparing a group III nitride transition layer on the AlN nucleation layer;
preparing a GaN layer on the group III nitride transition layer;
preparing a metal land on the GaN layer;
preparing a medium insertion layer with a plurality of through holes on the metal ground;
and preparing a plurality of CPWs on the medium insertion layer, wherein each CPW is correspondingly connected with the metal ground through one through hole.
In one embodiment of the present invention, after the preparation of the GaN layer on the group III nitride transition layer, the method further comprises:
and carrying out ultrasonic cleaning on the Si substrate, the AlN nucleating layer, the III-nitride transition layer and the GaN layer which are prepared from bottom to top.
In one embodiment of the present invention, ultrasonic cleaning of the Si substrate, the AlN nucleation layer, the group III nitride transition layer, and the GaN layer prepared from bottom to top includes:
and sequentially using acetone, isopropyl alcohol and deionized water to ultrasonically clean the Si substrate, the AlN nucleation layer, the III-nitride transition layer and the GaN layer which are prepared from bottom to top.
In one embodiment of the present invention, preparing a metal ground on the GaN layer includes:
and preparing a metal land on the cleaned GaN layer by adopting an electron beam evaporation or sputtering method.
In one embodiment of the invention, the material of the metallic ground comprises Al, or Au, or Ti/Al, or Ti/Au.
In one embodiment of the present invention, preparing a dielectric insertion layer having a plurality of through holes on the metal ground includes:
preparation of BCB, siO on the metal ground 2 Or a Polyimide material as a dielectric insertion layer;
and photoetching the medium inserting layer to obtain the graph of the through holes, and etching to remove the medium inserting layer in the through hole area to obtain the medium inserting layer with the through holes.
In one embodiment of the invention, the thickness of the dielectric insertion layer is 0.5-20 μm.
In one embodiment of the present invention, a plurality of CPWs are prepared on the dielectric insertion layer, and each of the CPWs is correspondingly connected to the metal ground through one of the vias, including:
and photoetching the medium insertion layer with the through holes to obtain the patterns of the CPWs, depositing a metal material on the medium insertion layer by utilizing an electron beam evaporation or sputtering method, and stripping the metal material to remove the metal material in the area outside the patterns of the CPWs to obtain the CPWs, wherein each CPW is correspondingly connected with the metal ground through one through hole.
In one embodiment of the invention, the material of the CPW comprises Al, or Au, or Ti/Al, or Ti/Au.
The invention has the beneficial effects that:
the invention aims to solve the problem of higher radio frequency loss of a transmission line in millimeter wave circuit application, and provides a transmission line structure on a Si-based GaN structure facing millimeter wave application.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
Fig. 1 is a schematic structural diagram of a CPW on a Si-based GaN structure provided in the prior art;
FIG. 2 is a top view of FIG. 1;
FIG. 3 is a schematic diagram of the CPW on another Si-based GaN structure provided by the prior art;
fig. 4 is a schematic structural diagram of a Si-based GaN millimeter wave transmission line structure according to an embodiment of the present invention;
fig. 5 is a schematic flow chart of a method for manufacturing a millimeter wave transmission line structure according to an embodiment of the present invention;
fig. 6a to fig. 6h are schematic structural diagrams of a millimeter wave transmission line structure according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but embodiments of the present invention are not limited thereto.
Example 1
Referring to fig. 4, fig. 4 is a schematic structural diagram of a Si-based GaN millimeter wave transmission line structure according to an embodiment of the present invention. The embodiment provides a millimeter wave transmission line structure, and the preparation method of the millimeter wave transmission line structure comprises the following steps:
a Si substrate 10;
an AlN nucleation layer 20 on the Si substrate 10;
a group III nitride transition layer 30 on AlN nucleation layer 20;
a GaN layer 40 on the group III nitride transition layer 30;
a metal ground 50 on the GaN layer 40;
a dielectric insertion layer 60 having a plurality of through holes, which is positioned on the metal land 50;
the CPWs 80 are located on the medium insertion layer 60, and each CPW80 is correspondingly connected to the metal ground 50 through a via.
Further, the metal ground 50 may include Au, or Al, or Cu, or Ti/Au, or Ti/Al, where Ti/Au means that the first layer is Ti, the second layer is Au, ti/Al means that the first layer is Ti, the second layer is Al, au, al, cu, ti/Au or Ti/Al material of the metal ground from bottom to top can better shield the effect of the p-type conduction channel at the AlN/Si interface, so as to achieve the effect of reducing the radio frequency loss of the transmission line, so as to meet the application requirement of the transmission line in the millimeter wave circuit.
Further, the thickness of the dielectric insertion layer 60 is 0.5-20 μm, preferably, the thickness of the dielectric insertion layer 60 is 4-5 μm, when the thickness of the dielectric insertion layer 60 is 4-5 μm, the purpose of effectively reducing the loss can be achieved, the processing can be facilitated, the reliability can be ensured, the purpose of effectively reducing the loss cannot be achieved due to the too thin thickness of the dielectric insertion layer 60, and the problems of difficult processing and reliability can be caused due to the too thick thickness of the dielectric insertion layer 60.
Further, the material of the CPW includes Al, or Au, or Ti/Al, or Ti/Au.
The invention aims to solve the problem of higher radio frequency loss of a transmission line in millimeter wave circuit application, and provides a transmission line structure on a Si-based GaN structure facing millimeter wave application.
Example two
Referring to fig. 5, fig. 6a to fig. 6h, fig. 5 is a schematic flow chart of a method for manufacturing a millimeter wave transmission line structure according to an embodiment of the present invention, and fig. 6a to fig. 6h are schematic structural diagrams of a millimeter wave transmission line structure according to an embodiment of the present invention. The embodiment provides a method for manufacturing a millimeter wave transmission line structure, which includes:
in step 1, as shown in fig. 6a, a Si substrate 10 is selected.
Step 2, an AlN nucleation layer 20 is prepared on the Si substrate 10 as shown in FIG. 6 b.
Specifically, alN nucleation layer 20 is prepared on Si substrate 10 by MOCVD (Metal-organic Chemical Vapor Deposition ).
Step 3, as shown in fig. 6c, a group III nitride transition layer 30 is fabricated on AlN nucleation layer 20.
Specifically, the group III nitride transition layer 30 is prepared on the AlN nucleation layer 20 using MOCVD.
Step 4, as shown in fig. 6d, a GaN layer 40 is prepared on the group III nitride transition layer 30.
Specifically, the GaN layer 40 is prepared on the group III nitride transition layer 30 using MOCVD.
In addition, after the GaN layer 40 is prepared, the Si substrate 10, the AlN nucleation layer 20, the group III nitride transition layer 30 and the GaN layer 40 prepared from bottom to top form a Si-based GaN structure, and after the GaN layer 40 is prepared, the Si substrate 10, the AlN nucleation layer 20, the group III nitride transition layer 30 and the GaN layer 40 prepared from bottom to top may be ultrasonically cleaned.
Further, the Si substrate 10, the AlN nucleation layer 20, the group III nitride transition layer 30, and the GaN layer 40 prepared from bottom to top were ultrasonically cleaned using acetone, isopropyl alcohol, and deionized water in this order.
Step 5, as shown in fig. 6e, a metal ground 50 is prepared on the GaN layer 40.
Specifically, the metal lands 50 are prepared on the washed GaN layer 40 using an electron beam evaporation or sputtering method.
Preferably, the material of the metal ground 50 may include Au, or Al, or Cu, or Ti/Au, or Ti/Al, where Ti/Au means that the first layer is Ti, the second layer is Au, and Ti/Al means that the first layer is Ti, the second layer is Al, and Au, al, cu, ti/Au or Ti/Al material of the metal ground from bottom to top can better shield the effect of the p-type conduction channel at the AlN/Si interface, so as to achieve the effect of reducing the radio frequency loss of the transmission line, so as to meet the application requirement of the transmission line in the millimeter wave circuit.
And 6, preparing a dielectric insertion layer with a plurality of through holes on the metal land 50, wherein the dielectric insertion layer is used for separating the metal land 50 and the CPW when in action.
Specifically, step 6 may specifically include step 6.1-step 6.2, wherein:
step 6.1 As shown in FIG. 6f, BCB (Benzocyclobutene), siO is prepared on a metalloplace 50 2 Or Polyimide (Polyimide) material as the dielectric insertion layer 60.
In this embodiment, in order to ensure that the dielectric insertion layer 60 can effectively separate the metal ground 50 and the CPW, it is necessary that the dielectric insertion layer 60 has a low dielectric constant, so that parasitic capacitance is small and loss is low, and BCB and SiO are selected in this embodiment 2 Or a Polyimide material.
Further, when the material of the dielectric insertion layer 60 is SiO 2 When CVD (Chemical Vapour Deposition, chemical vapor deposition) or PVD (Physical Vapor Deposition ) methods can be used to produce SiO on the metal pad 50 2 A dielectric insertion layer 60 of material; when the material of the dielectric insertion layer 60 is BCB or Polyimide, BCB or Polyimide may be spin-coated on the metal pad 50, and then dried to obtain the dielectric insertion layer 60.
Further, the thickness of the dielectric insertion layer 60 is 0.5-20 μm, preferably, the thickness of the dielectric insertion layer 60 is 4-5 μm, when the thickness of the dielectric insertion layer 60 is 4-5 μm, the purpose of effectively reducing the loss can be achieved, the processing can be facilitated, the reliability can be ensured, the purpose of effectively reducing the loss cannot be achieved due to the too thin thickness of the dielectric insertion layer 60, and the problems of difficult processing and reliability can be caused due to the too thick thickness of the dielectric insertion layer 60.
Step 6.2, as shown in fig. 6g, the dielectric insertion layer 60 is subjected to photolithography to obtain a pattern of through holes 70, and the dielectric insertion layer 60 in the region of the through holes 70 is etched to obtain a dielectric insertion layer 60 having a plurality of through holes 70.
Specifically, the Si-based GaN structure after the growth medium is inserted into the layer 69 is subjected to photolithography to obtain a pattern of through holes 70, and the positions and the number of the through holes 70 may be set according to the positions and the number of the CPWs, the through holes 70 being for connecting the metal lands 50 and the CPWs to be one common. After the patterning of the through holes 70 is obtained, the material of the dielectric insertion layer 60 in the area of the through holes 70 may be etched away to the same depth as the thickness of the dielectric insertion layer 60, for example 0.5-20 μm, preferably 4-5 μm, and after the material of the dielectric insertion layer 60 in the area of the through holes 70 is etched away, the dielectric insertion layer 60 with several through holes 70 may be obtained.
In step 7, as shown in fig. 6h, a plurality of CPWs 80 are prepared on the dielectric insertion layer 60, and each CPW80 is correspondingly connected to the metal ground 50 through a via 70.
Specifically, the Si-based GaN structure after the dielectric insertion layer 60 having the plurality of through holes 70 is prepared is subjected to photolithography to obtain a pattern of the CPW80, then a metal material is deposited on the dielectric insertion layer 60 by using an electron beam evaporation, sputtering or electroplating method, and then the metal material is stripped or etched to remove the metal material in the region outside the pattern of the CPW80 to obtain the CPW80, and each CPW80 is correspondingly connected to the metal ground 50 through a through hole 70, thereby completing the fabrication of an igct (integrated-ground) by inserting a layer of metal ground 50 between the GaN layer 40 and the CPW80, wherein the ground line of the CPW80 and the metal ground 50 are commonly connected through the metal through the through hole 70 of the dielectric insertion layer 60.
Preferably, the material of the CPW comprises Al, or Au, or Ti/Al, or Ti/Au.
The invention aims to solve the problem of higher radio frequency loss of a transmission line in millimeter wave circuit application, and provides a preparation method of the transmission line structure on a Si-based GaN structure facing millimeter wave application.
Example III
In this embodiment, on the basis of sequentially preparing the Si substrate 10, the AlN nucleation layer 20, the group III nitride transition layer 30 and the GaN layer 40 from bottom to top in the manner of the first embodiment, the remaining steps of one embodiment will be specifically described in a specific embodiment, and after preparing the Si substrate 10, the AlN nucleation layer 20, the group III nitride transition layer 30 and the GaN layer 40, the following steps may be specifically performed:
s1: the Si-based GaN structure, i.e., the Si substrate 10, the AlN nucleation layer 20, the group III nitride transition layer 30, and the GaN layer 40, which are sequentially arranged from bottom to top, are cleaned.
Specifically, the Si substrate 10, the AlN nucleation layer 20, the group III nitride transition layer 30, and the GaN layer 40 prepared from bottom to top were ultrasonically cleaned sequentially with acetone, isopropyl alcohol, and deionized water for 5 minutes, and then the water droplets on the sample surface were blow-dried with high-purity nitrogen.
S2: a metal ground 50 is deposited.
Specifically, the cleaned Si-based GaN structure is subjected to metal ground 50 deposition, and 600nm of Au metal is deposited on the cleaned Si-based GaN structure at a rate of 0.1nm/s by adopting an electron beam evaporation technology, so as to manufacture the metal ground 50.
S3: the medium intercalating layer 60 is grown.
Specifically, a BCB material having a thickness of 0.5 μm is grown as the dielectric insertion layer 60 on the Si-based GaN structure after the metal ground 50 is fabricated.
S4: the via 70 is etched.
Specifically, the Si-based GaN structure after the growth of the dielectric insertion layer 60 is subjected to photolithography to obtain a pattern of the through-hole 70, and the dielectric insertion layer material in the region of the through-hole 70 is etched away to an etching depth of 0.5 μm.
S5: CPW80 was fabricated.
Specifically, the Si-based GaN structure after etching the through hole 70 is subjected to photolithography to obtain a CPW pattern, then an electron beam evaporation technique is used to deposit 600nm Au metal on the dielectric insertion layer 60 on the Si-based GaN structure after completing CPW photolithography, finally stripping is performed after depositing Au metal, au metal in the area outside the CPW pattern is removed to obtain CPW80, and IGCPW fabrication is completed.
Example IV
In this embodiment, on the basis of sequentially preparing the Si substrate 10, the AlN nucleation layer 20, the group III nitride transition layer 30, and the GaN layer 40 from bottom to top in the manner of the first embodiment, the remaining steps of one embodiment will be specifically described in another embodiment, and after preparing the Si substrate 10, the AlN nucleation layer 20, the group III nitride transition layer 30, and the GaN layer 40, the following steps may be specifically performed:
s1: the Si-based GaN structure, i.e., the Si substrate 10, the AlN nucleation layer 20, the group III nitride transition layer 30, and the GaN layer 40, which are sequentially arranged from bottom to top, are cleaned.
Specifically, the Si substrate 10, the AlN nucleation layer 20, the group III nitride transition layer 30, and the GaN layer 40 prepared from bottom to top were ultrasonically cleaned sequentially with acetone, isopropyl alcohol, and deionized water for 5 minutes, and then the water droplets on the sample surface were blow-dried with high-purity nitrogen.
S2: a metal ground 50 is deposited.
Specifically, the cleaned Si-based GaN structure is subjected to metal deposition 50, and a sputtering technique is adopted to deposit 1200nm of Ti/Au metal on the cleaned Si-based GaN structure at a rate of 0.3nm/s, so as to manufacture the metal 50.
S3: the medium intercalating layer 60 is grown.
Specifically, siO with 5 μm thickness is grown on the Si-based GaN structure after the metal land 50 is fabricated 2 The material acts as a dielectric insertion layer 60.
S4: the via 70 is etched.
Specifically, the Si-based GaN structure after the growth of the dielectric insertion layer 60 is subjected to photolithography to obtain a pattern of the through-hole 70, and the dielectric insertion layer material in the region of the through-hole 70 is etched away to an etching depth of 5 μm.
S5: CPW80 was fabricated.
Specifically, the Si-based GaN structure after etching the through hole 70 is subjected to photoetching to obtain a CPW pattern, then a dielectric insertion layer 60 on the Si-based GaN structure after completing CPW photoetching is used for depositing 1200nm of Ti/Au metal, finally stripping is performed after depositing the Ti/Au metal, and the Ti/Au metal in the area outside the CPW pattern is removed to obtain CPW80, so that the manufacture of the IGCPW is completed.
Example five
In this embodiment, on the basis of sequentially preparing the Si substrate 10, the AlN nucleation layer 20, the group III nitride transition layer 30, and the GaN layer 40 from bottom to top in the manner of the first embodiment, the remaining steps of one embodiment will be specifically described in another embodiment, and after preparing the Si substrate 10, the AlN nucleation layer 20, the group III nitride transition layer 30, and the GaN layer 40, the following steps may be specifically performed:
s1: the Si-based GaN structure, i.e., the Si substrate 10, the AlN nucleation layer 20, the group III nitride transition layer 30, and the GaN layer 40, which are sequentially arranged from bottom to top, are cleaned.
Specifically, the Si substrate 10, the AlN nucleation layer 20, the group III nitride transition layer 30, and the GaN layer 40 prepared from bottom to top were ultrasonically cleaned sequentially with acetone, isopropyl alcohol, and deionized water for 5 minutes, and then the water droplets on the sample surface were blow-dried with high-purity nitrogen.
S2: a metal ground 50 is deposited.
Specifically, the cleaned Si-based GaN structure is subjected to metal deposition 50, and a sputtering technique is adopted to deposit 1200nm of Ti/Au metal on the cleaned Si-based GaN structure at a rate of 0.3nm/s, so as to manufacture the metal 50.
S3: the medium intercalating layer 60 is grown.
Specifically, siO with 5 μm thickness is grown on the Si-based GaN structure after the metal land 50 is fabricated 2 The material acts as a dielectric insertion layer 60.
S4: the via 70 is etched.
Specifically, the Si-based GaN structure after the growth of the dielectric insertion layer 60 is subjected to photolithography to obtain a pattern of the through-hole 70, and the dielectric insertion layer material in the region of the through-hole 70 is etched away to an etching depth of 5 μm.
S5: CPW80 was fabricated.
Specifically, the Si-based GaN structure after etching the through hole 70 is subjected to photoetching to obtain a CPW pattern, then a dielectric insertion layer 60 on the Si-based GaN structure after completing CPW photoetching is used for depositing 1200nm of Ti/Au metal, finally stripping is performed after depositing the Ti/Au metal, and the Ti/Au metal in the area outside the CPW pattern is removed to obtain CPW80, so that the manufacture of the IGCPW is completed.
In the description of the present invention, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic point described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristic data points described may be combined in any suitable manner in any one or more embodiments or examples. Further, one skilled in the art can engage and combine the different embodiments or examples described in this specification.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the invention, and these should be considered to be within the scope of the invention.
Claims (10)
1. A Si-based GaN millimeter wave transmission line structure, comprising:
a Si substrate;
an AlN nucleation layer on the Si substrate;
a group III nitride transition layer on the AlN nucleation layer;
a GaN layer on the group III nitride transition layer;
a metal ground on the GaN layer;
the metal ground is used for shielding the influence of a p-type conducting channel at an AlN/Si interface;
the medium inserting layer is provided with a plurality of through holes and is positioned on the metal ground;
and the CPWs are positioned on the medium insertion layer, and each CPW is correspondingly connected with the metal ground through one through hole.
2. The preparation method of the Si-based GaN millimeter wave transmission line structure is characterized by comprising the following steps of:
selecting a Si substrate;
preparing an AlN nucleation layer on the Si substrate;
preparing a group III nitride transition layer on the AlN nucleation layer;
preparing a GaN layer on the group III nitride transition layer;
preparing a metal land on the GaN layer; the metal ground is used for shielding the influence of a p-type conducting channel at an AlN/Si interface;
preparing a medium insertion layer with a plurality of through holes on the metal ground;
and preparing a plurality of CPWs on the medium insertion layer, wherein each CPW is correspondingly connected with the metal ground through one through hole.
3. The method for fabricating a Si-based GaN millimeter wave transmission line structure according to claim 2, further comprising, after fabricating a GaN layer on said group III nitride transition layer:
and carrying out ultrasonic cleaning on the Si substrate, the AlN nucleating layer, the III-nitride transition layer and the GaN layer which are prepared from bottom to top.
4. The method for fabricating a Si-based GaN millimeter wave transmission line structure according to claim 3, wherein ultrasonic cleaning of the Si substrate, the AlN nucleation layer, the group III nitride transition layer, and the GaN layer fabricated from bottom to top comprises:
and sequentially using acetone, isopropyl alcohol and deionized water to ultrasonically clean the Si substrate, the AlN nucleation layer, the III-nitride transition layer and the GaN layer which are prepared from bottom to top.
5. The method of fabricating a Si-based GaN millimeter wave transmission line structure according to claim 4, wherein fabricating a metal ground on said GaN layer comprises:
and preparing a metal land on the cleaned GaN layer by adopting an electron beam evaporation or sputtering method.
6. The method for fabricating a Si-based GaN millimeter wave transmission line structure according to claim 5, wherein the material of the metal ground comprises Au, or Al, or Cu, or Ti/Au, or Ti/Al.
7. The method for fabricating a Si-based GaN millimeter wave transmission line structure according to claim 2, wherein fabricating a dielectric insertion layer having a plurality of through holes on the metal ground comprises:
preparing a BCB, siO2 or Polyimide material on the metal as a medium insertion layer;
and photoetching the medium inserting layer to obtain the graph of the through holes, and etching to remove the medium inserting layer in the through hole area to obtain the medium inserting layer with the through holes.
8. The method for fabricating a Si-based GaN millimeter wave transmission line structure according to claim 7, wherein said dielectric insertion layer has a thickness of 0.5-20 μm.
9. The method for fabricating a Si-based GaN millimeter wave transmission line structure according to claim 7, wherein a plurality of CPWs are fabricated on said dielectric insertion layer, and each of said CPWs is correspondingly connected to said metal ground through one of said vias, comprising:
and photoetching the medium insertion layer with the through holes to obtain the patterns of the CPWs, depositing a metal material on the medium insertion layer by utilizing an electron beam evaporation, sputtering or electroplating method, and stripping or etching the metal material to remove the metal material in the area outside the patterns of the CPWs to obtain the CPWs, wherein each CPW is correspondingly connected with the metal ground through one through hole.
10. The method for fabricating a Si-based GaN millimeter wave transmission line structure according to claim 9, wherein the CPW material comprises Al, au, ti/Al, or Ti/Au.
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| JP2002171105A (en) * | 2000-12-04 | 2002-06-14 | Sumitomo Metal Electronics Devices Inc | Transmission line board, high-frequency transmission structure and high-frequency package equipped therewith |
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| CN107690698A (en) * | 2015-06-08 | 2018-02-13 | 雷声公司 | Microwave integrated circuit for microwave energy transfer（MMIC）Inlay electrical interconnection |
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| WO2004013928A1 (en) * | 2002-08-01 | 2004-02-12 | Matsushita Electric Industrial Co., Ltd. | Transmission line and semiconductor integrated circuit device |
| US7561006B2 (en) * | 2006-08-25 | 2009-07-14 | Banpil Photonics, Inc. | Low loss electrical delay line |
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| JP2002171105A (en) * | 2000-12-04 | 2002-06-14 | Sumitomo Metal Electronics Devices Inc | Transmission line board, high-frequency transmission structure and high-frequency package equipped therewith |
| EP2639829A2 (en) * | 2012-03-15 | 2013-09-18 | International Rectifier Corporation | Group III-V and Group IV Composite Switch |
| TW201513303A (en) * | 2013-06-10 | 2015-04-01 | Raytheon Co | Semiconductor structure having column III-V isolation regions |
| CN107690698A (en) * | 2015-06-08 | 2018-02-13 | 雷声公司 | Microwave integrated circuit for microwave energy transfer（MMIC）Inlay electrical interconnection |
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