CN111653519A - Method for manufacturing interconnection hole of copper-aluminum wire interconnection structure - Google Patents
Method for manufacturing interconnection hole of copper-aluminum wire interconnection structure Download PDFInfo
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- CN111653519A CN111653519A CN202010600572.9A CN202010600572A CN111653519A CN 111653519 A CN111653519 A CN 111653519A CN 202010600572 A CN202010600572 A CN 202010600572A CN 111653519 A CN111653519 A CN 111653519A
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- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052802 copper Inorganic materials 0.000 claims abstract description 44
- 239000010949 copper Substances 0.000 claims abstract description 44
- 230000004888 barrier function Effects 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000005751 Copper oxide Substances 0.000 claims abstract description 16
- 229910000431 copper oxide Inorganic materials 0.000 claims abstract description 16
- 239000002245 particle Substances 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 9
- 239000011148 porous material Substances 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 19
- 238000004140 cleaning Methods 0.000 claims description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000001307 helium Substances 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- 239000000356 contaminant Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 10
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000002411 adverse Effects 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 5
- 229910001431 copper ion Inorganic materials 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- 238000007872 degassing Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Abstract
The application relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing an interconnection hole of a copper-aluminum interconnection structure. The manufacturing method of the interconnecting hole of the copper-aluminum interconnecting structure at least comprises the following steps: providing a first interconnect layer containing copper interconnect lines; preparing a second interconnection layer on the first interconnection layer; aligning the copper interconnection line in the first interconnection layer, and etching the second interconnection layer to form an interconnection hole; introducing H-containing gas into the interconnected pores+The plasma body bombards the interconnection hole to remove the pollution particles attached to the inner wall of the interconnection hole, and the plasma body reacts with the copper oxide on the surface of the copper interconnection line at the position connected with the interconnection hole; depositing an adhesion layer and a barrier layer on the inner wall of the cleaned interconnection hole in sequence; and filling metal into the interconnection holes deposited with the adhesion layers and the barrier layers. The method and the device can solve the problems that defects are introduced to the surface of the copper interconnection line in the related technology and adverse effects are caused to the reliability of through hole filling.
Description
Technical Field
The application relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing an interconnection hole of a copper-aluminum interconnection structure.
Background
With the development of semiconductor manufacturing processes, the area of a semiconductor chip is smaller and smaller, and the number of semiconductor devices on one semiconductor chip is also larger and larger. In semiconductor circuits, therefore, high density of metal interconnect lines are required for signal transmission between semiconductor devices.
For some special semiconductor circuits, metal interconnection lines between semiconductor devices, namely copper-aluminum interconnection lines, need to be manufactured through a copper-aluminum interconnection technology. In the related art, a copper-aluminum interconnection structure includes a copper interconnection at a lower layer and an aluminum interconnection at an upper layer. The aluminum interconnection line is interconnected with the metal interconnection line below the aluminum interconnection line through the interconnection hole filled with tungsten. Before filling the interconnection hole with metal tungsten, Ar is required to pass through+And (4) cleaning impurities on the surface of the hole wall by a sputtering technology.
However, in Ar+When bombarding the surface of the interconnection hole, the surface of the copper interconnection line is subjected to Ar+Copper ions are sputtered out by physical bombardment, and the copper ions sputtered out by bombardment are deposited on the surface of the interconnection hole, so that defects are introduced to the surface of the copper interconnection line, and the reliability of through hole filling is also adversely affected.
Disclosure of Invention
The application provides a method for manufacturing an interconnection hole of a copper-aluminum interconnection structure, which can solve the problems that the related technology can introduce defects to the surface of the copper interconnection line and can cause adverse effects on the reliability of through hole filling.
The application provides a method for manufacturing an interconnection hole of a copper-aluminum interconnection structure, which at least comprises the following steps:
providing a first interconnect layer containing copper interconnect lines;
preparing a second interconnection layer on the first interconnection layer;
aligning the copper interconnection line in the first interconnection layer, and etching the second interconnection layer to form an interconnection hole;
introducing H-containing gas into the interconnected pores+Causing the plasma to bombard the interconnect hole to remove contaminant particles attached to the inner wall of the interconnect hole, and to react with copper oxide on the surface of the copper interconnect line at a location where the interconnect hole is connected;
depositing an adhesion layer and a barrier layer on the inner wall of the cleaned interconnection hole in sequence;
and filling metal into the interconnection holes deposited with the adhesion layers and the barrier layers.
Optionally, after the step of forming the interconnection hole, the step of introducing H-containing gas into the interconnection hole+Before the step of plasma of (2), further performing:
a pretreatment step; the pretreatment step comprises: baking at 300-350 deg.C for 30-60 s in vacuum environment to remove water vapor and residue from previous etching process.
Optionally, the gas introduced into the interconnected pores contains H+Of the plasma of (a) so that H in the plasma is+The step of bombarding the interconnect hole comprises:
introducing helium mixed with hydrogen as cleaning gas, wherein the flow rate of the helium is 50sccm-100 sccm;
forming a plasma containing H + using the cleaning gas;
and accelerating the H < + > containing plasma to bombard the interconnection hole, removing the pollution particles attached to the inner wall of the interconnection hole, and removing the copper oxide and impurity particles on the surface of the copper interconnection line at the position connected with the interconnection hole.
Optionally, hydrogen is mixed in the cleaning gas to account for 5% -10% of the total mass.
Optionally, the adhesion layer is made of titanium.
Optionally, the adhesion layer has a thickness of
Optionally, the barrier layer is made of titanium nitride.
Optionally, the thickness of the barrier layer is
Optionally, in the step of filling metal into the interconnection hole deposited with the adhesion layer and the barrier layer, the metal filling the interconnection hole includes metal tungsten.
The technical scheme at least comprises the following advantages: by containing H+The plasma can carry out physical bombardment on the inner wall surface of the interconnection hole, thereby removing pollution particles attached to the inner wall surface of the interconnection hole, carrying out chemical reduction reaction on copper oxide on an interface, further avoiding the problem that copper ions are sputtered and deposited on the inner wall of the interconnection hole, and improving the filling reliability of the interconnection hole.
Drawings
In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art description will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a flowchart of a method for manufacturing an interconnect hole of a copper-aluminum interconnect structure according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a copper-aluminum interconnection structure provided in the embodiment of the present application after step 101 of an interconnection hole manufacturing method is completed;
fig. 3 is a schematic structural diagram of a copper-aluminum interconnection structure provided in the embodiment of the present application after step 103 of the interconnection hole manufacturing method is completed;
fig. 4 is a schematic structural diagram of a copper-aluminum interconnection structure provided in the embodiment of the present application after step 104 of the interconnection hole manufacturing method is completed;
fig. 5 is a schematic structural diagram of a copper-aluminum interconnection structure provided in the embodiment of the present application after step 106 of the interconnection hole manufacturing method is completed;
fig. 6 is a schematic structural diagram of a copper-aluminum interconnection structure provided in the embodiment of the present application after step 107 of the interconnection hole manufacturing method is completed.
Detailed Description
The technical solutions in the present application will be described clearly and completely with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; the connection can be mechanical connection or electrical connection; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
In addition, the technical features mentioned in the different embodiments of the present application described below may be combined with each other as long as they do not conflict with each other.
Referring to fig. 1, a flowchart of a method for manufacturing an interconnection hole of a copper-aluminum interconnection structure provided in an embodiment of the present application is shown, where the method for manufacturing an interconnection hole of a copper-aluminum interconnection structure at least includes the following steps:
Fig. 2 shows a schematic structural diagram after step 101 is completed, and as shown in fig. 2, the method includes fabricating a first interconnect layer 201 including a copper interconnect line 202 by using damascene; optionally, providing a first dielectric layer, and fabricating a copper interconnect 202 in the first dielectric layer, where the copper interconnect 202 extends downward from a surface of the first dielectric layer, and an upper surface of the copper interconnect 202 is exposed; the upper surface of the first interconnect layer 201 is planarized by a chemical mechanical polishing process. Since metallic copper is easily oxidized by exposure to air, a layer of copper oxide 203 is formed on the upper surface of the copper interconnect 202.
A second interconnect layer is prepared on the first interconnect layer, step 102.
The second interconnect layer is formed by depositing an insulating material on the surface of the first interconnect layer by a CVD (Chemical Vapor Deposition) process.
Fig. 3 shows the structure after step 103 is completed, and as shown in fig. 3, the structure comprises a first interconnection layer 201 containing a copper interconnection line 202, and a second interconnection layer 301 arranged on the first interconnection layer 201, wherein an interconnection hole 302 is formed on the second interconnection layer 301 by etching according to step 103, and the interconnection hole 302 is downward contacted with the copper interconnection line 202 in the first interconnection layer 201.
After step 103 is completed, pre-degassing is also performed before step 104, and impurities in the interconnection holes are removed as much as possible by the pre-degassing.
104, introducing H into the interconnected holes+Causing the plasma to bombard the interconnect hole to remove impurities attached to the inner wall of the interconnect hole, and, at a location in contact with the interconnect hole, to react with copper oxide on the surface of the copper interconnect line.
FIG. 4 showsBy containing H in step 104+The plasma of (2) is used to clean the interconnection hole, as shown in FIG. 4, the inner wall of the interconnection hole can be H-containing+And contains H+The plasma reacts with the copper oxide 203 on the surface of the copper interconnect 202 at the location of the connection with the interconnect hole, thereby effectively removing the copper oxide 203 on the surface of the copper interconnect 202 at the interface of the interconnect hole and the copper interconnect 202.
Wherein, the interconnected pores are filled with a gas containing H+The step of plasma of (a) comprises:
introducing helium mixed with hydrogen as cleaning gas, wherein the flow rate of the helium is 50sccm-100 sccm; wherein, the cleaning gas is mixed with hydrogen accounting for 5 to 10 percent of the total mass.
Forming a plasma containing H + using the cleaning gas.
And accelerating the H < + > containing plasma to bombard the interconnection hole, removing the pollution particles attached to the inner wall of the interconnection hole, and removing the copper oxide and impurity particles on the surface of the copper interconnection line at the position connected with the interconnection hole.
The cleaning gas is excited to generate H under the action of radio frequency current with the frequency of 2MHz and the power of 500W-1000W+The plasma of (2); excited containing H+The plasma body is introduced into the interconnection hole and can bombard the inner wall surface of the interconnection hole, so that the pollution particles attached to the inner wall surface of the interconnection hole fall off the surface and are finally sucked away by the vacuum pump. Simultaneously, excited contains H+Into the interconnect hole and is capable of chemically reducing copper oxide 203 on the surface of the copper interconnect 202 at the interface of the interconnect hole and the copper interconnect 202.
Passing a gas containing H to the interconnected pores at a pressure of 0.1mTorr to 100mTorr+Of the plasma of (a) so that H in the plasma is+Bombarding the interconnection hole, removing pollution particles attached to the inner wall of the interconnection hole, and removing the copper oxide 203 on the surface of the copper interconnection line 202 at the position connected with the interconnection hole.
Containing H+The plasma body can carry out the physical bombardment to the interconnect hole inner wall surface to get rid of the pollutant particle who adheres to at interconnect hole inner wall surface, can carry out chemical reduction reaction to the copper oxide 203 of interface, can not sputter copper particle, and then avoid copper ion deposit interconnect hole inner wall, improve the reliability that the interconnect hole was filled.
And 105, depositing an adhesion layer and a barrier layer on the inner wall of the cleaned interconnection hole in sequence.
The titanium metal has good adhesion, larger work function, good ohmic contact with the interconnected pore wall and smaller contact resistance, so that the material of the adhesion layer can be titanium, and the thickness of the adhesion layer can be selected
The material of the barrier layer can be selected from titanium nitride, and the thickness of the barrier layer can be selected from titanium nitride
The titanium nitride is used as a barrier layer for preventing the metal filled in the interconnection hole from diffusing in the subsequent process.
In step 105, after an adhesion layer and a barrier layer are sequentially deposited on the inner wall of the interconnection hole, the interconnection hole is filled after the interconnection hole is cooled to room temperature in a vacuum environment.
And 106, filling metal into the interconnection holes deposited with the adhesion layers and the barrier layers.
Fig. 5 shows a schematic structural diagram after step 106 is completed, and as shown in fig. 5, the structure includes a first interconnect layer 201 including a copper interconnect line 202, and a second interconnect layer 301 disposed on the first interconnect layer 201, and an interconnect hole is formed on the second interconnect layer 301 by etching according to step 103, and the interconnect hole is downward in contact with the copper interconnect line 202 in the first interconnect layer 201. An adhesion layer 303 and a barrier layer 304 are sequentially deposited on the inner wall of the interconnection hole, and metal is filled in the interconnection hole on which the adhesion layer 303 and the barrier layer 304 are deposited. That is, a Chemical vapor deposition process may be used to fill the interconnection holes on which the adhesion layer 304 and the barrier layer 305 are deposited with metal tungsten, and excess metal tungsten 305 on the surfaces of the interconnection holes may be removed by a CMP (Chemical Mechanical Polishing) process to planarize the surfaces of the interconnection holes.
After the step 106 is finished, the fabrication of the interconnection hole is completed, and for the copper-aluminum interconnection structure, after the step 106, a step 107 is further performed:
and continuing to prepare a third interconnection layer on the second interconnection layer.
And aligning the interconnection holes in the second interconnection layer, and forming aluminum interconnection lines in the third interconnection layer.
The interconnect hole is upwardly in contact with the aluminum interconnect line.
Fig. 6 shows a schematic structural diagram formed after the fabrication in step 107 is completed, and fig. 6 shows that the structure includes a first interconnect layer 201 including a copper interconnect line 202, and a second interconnect layer 301 disposed on the first interconnect layer 201, where an interconnect hole is formed on the second interconnect layer 301 by etching according to step 103, and the interconnect hole is downward in contact with the copper interconnect line 202 in the first interconnect layer 201. An adhesion layer 303 and a barrier layer 304 are sequentially deposited on the inner wall of the interconnection hole, and metal tungsten 305 is filled in the interconnection hole on which the adhesion layer 303 and the barrier layer 304 are deposited. A third interconnect layer 401 is formed on the planarized second interconnect layer 301, the third interconnect layer 401 forms an aluminum interconnect line 402, the aluminum interconnect line 402 extends upward from the lower surface of the third interconnect layer 401, and the metal tungsten 305 in the interconnect hole is in contact with the lower surface of the aluminum interconnect line 402 upward.
In summary, the embodiment of the present application provides a first interconnect layer including a copper interconnect line; preparing a second interconnection layer on the first interconnection layer, and aligning the copper interconnection line in the first interconnection layer; etching the second interconnection layer to form interconnection holes; introducing H-containing gas into the interconnected pores+Causing the plasma to bombard the interconnect hole to remove impurities attached to the inner wall of the interconnect hole and to react with copper oxide on the surface of the copper interconnect line at a location connected to the interconnect hole; depositing an adhesion layer and a barrier layer on the inner wall of the cleaned interconnection hole in sequence; and filling metal into the interconnection holes deposited with the adhesion layers and the barrier layers. By containing H+Can be injected into the inner wall surface of the interconnected poresAnd physical bombardment is carried out, so that pollution particles attached to the inner wall surface of the interconnection hole are removed, chemical reduction reaction can be carried out on the copper oxide at the interface, the problem that copper ions are sputtered and deposited on the inner wall of the interconnection hole is further avoided, and the filling reliability of the interconnection hole is improved.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of this invention are intended to be covered by the scope of the invention as expressed herein.
Claims (9)
1. A method for manufacturing an interconnection hole of a copper-aluminum interconnection structure is characterized by at least comprising the following steps:
providing a first interconnect layer containing copper interconnect lines;
preparing a second interconnection layer on the first interconnection layer;
aligning the copper interconnection line in the first interconnection layer, and etching the second interconnection layer to form an interconnection hole;
introducing H-containing gas into the interconnected pores+Causing the plasma to bombard the interconnect hole to remove contaminant particles attached to the inner wall of the interconnect hole, and to react with copper oxide on the surface of the copper interconnect line at a location where the interconnect hole is connected;
depositing an adhesion layer and a barrier layer on the inner wall of the cleaned interconnection hole in sequence;
and filling metal into the interconnection holes deposited with the adhesion layers and the barrier layers.
2. The method for forming an interconnection hole of a copper-aluminum interconnection structure of claim 1, wherein after the step of forming an interconnection hole, the interconnection hole is filled with a gas containing H+Before the step of plasma of (2), further performing:
a pretreatment step; the pretreatment step comprises: baking at 300-350 deg.C for 30-60 s in vacuum environment to remove water vapor and residue.
3. The method for forming an interconnect hole in a copper-aluminum interconnect structure as claimed in claim 1, wherein said introducing H-containing gas into said interconnect hole+Of the plasma of (a) so that H in the plasma is+The step of bombarding the interconnect hole comprises:
introducing helium mixed with hydrogen as cleaning gas, wherein the flow rate of the helium is 50sccm-100 sccm;
forming a plasma containing H + using the cleaning gas;
and accelerating the H < + > containing plasma to bombard the interconnection hole, removing the pollution particles attached to the inner wall of the interconnection hole, and removing the copper oxide and impurity particles on the surface of the copper interconnection line at the position connected with the interconnection hole.
4. The method for making interconnecting holes of copper-aluminum interconnecting structure as claimed in claim 1, wherein hydrogen is mixed in said cleaning gas in an amount of 5-10% by mass of the total mass.
5. The method for forming the via in the copper-aluminum interconnect structure of claim 1, wherein said adhesion layer is titanium.
6. The method of claim 5, wherein the adhesion layer has a thickness of
7. The method for forming interconnect holes in copper-aluminum interconnect structures as claimed in claim 1, wherein said barrier layer is made of titanium nitride.
8. As in claimThe method for manufacturing the interconnection hole of the copper-aluminum interconnection structure in claim 7, wherein the thickness of the barrier layer is
9. The method for forming the interconnection hole of the copper-aluminum interconnection structure, according to claim 1, wherein in the step of filling the interconnection hole with the metal, the metal filling the interconnection hole comprises tungsten.
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| CN202010600572.9A CN111653519A (en) | 2020-06-28 | 2020-06-28 | Method for manufacturing interconnection hole of copper-aluminum wire interconnection structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112259502A (en) * | 2020-10-23 | 2021-01-22 | 华虹半导体(无锡)有限公司 | Method for manufacturing copper interconnection structure |
| CN112435960A (en) * | 2020-11-27 | 2021-03-02 | 华虹半导体(无锡)有限公司 | Method for improving quality of interlayer alignment mark of aluminum interconnection structure |
| CN112635398A (en) * | 2020-12-18 | 2021-04-09 | 华虹半导体(无锡)有限公司 | Process method for filling copper in groove |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101419923A (en) * | 2007-10-25 | 2009-04-29 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method for lead wire welding mat |
| CN103972160A (en) * | 2014-04-22 | 2014-08-06 | 上海华力微电子有限公司 | Method for lowering influence on copper interconnection reliability from online WAT testing |
-
2020
- 2020-06-28 CN CN202010600572.9A patent/CN111653519A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101419923A (en) * | 2007-10-25 | 2009-04-29 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method for lead wire welding mat |
| CN103972160A (en) * | 2014-04-22 | 2014-08-06 | 上海华力微电子有限公司 | Method for lowering influence on copper interconnection reliability from online WAT testing |
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