CN111638435B - Test equipment for overvoltage protection device - Google Patents
Test equipment for overvoltage protection device Download PDFInfo
- Publication number
- CN111638435B CN111638435B CN202010285697.7A CN202010285697A CN111638435B CN 111638435 B CN111638435 B CN 111638435B CN 202010285697 A CN202010285697 A CN 202010285697A CN 111638435 B CN111638435 B CN 111638435B
- Authority
- CN
- China
- Prior art keywords
- overvoltage protection
- protection device
- type diffusion
- current
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
Abstract
The invention discloses test equipment of an overvoltage protection device, which is used for testing the overvoltage protection device and comprises a power momentary switch module, an MCU controller module, a current and voltage detection circuit and a man-machine interaction module, wherein the input end of the power momentary switch module is connected with a surge signal source in operation, the output end of the power momentary switch module is connected with a novel semiconductor device to be tested, the power switch is triggered after the on time is set through the man-machine interaction module, the surge impacts the novel semiconductor device to be tested, the surge signal source is automatically closed after the time, meanwhile, the waveform of the current and the voltage flowing through the device to be tested is detected through the current and voltage detection circuit in the on time, the waveform is recorded and displayed on a screen of the man-machine interaction module, and the energy born by the on of the novel semiconductor device is obtained through calculation.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to test equipment of an overvoltage protection device.
Background
One type of power source is direct current to direct current (DC/DC) conversion, and such circuits are widely used in battery powered applications to convert battery voltage to a DC voltage suitable for a load via DC/DC.
At present, the power type non-isolated DC/DC becomes a mainstream scheme of the two-wheeled electric vehicle, but a certain proportion of the spontaneous combustion events of the two-wheeled electric vehicle exposed every year are analyzed to be caused by breakdown of a non-isolated DC/DC switching tube, and in addition, according to data obtained by investigation of maintenance points, failures caused by breakdown of the switching tube in the non-isolated DC/DC are almost recorded along with burning of an output load.
The surge protection device is not turned on instantaneously when it encounters a surge, but needs energy exceeding its threshold to operate, but there is currently no device on the market that measures this capability and the operating time. The 8/20 and 10/1000 surge testing machines in the market can only be used for judging whether the device can pass the surge of a certain current voltage, and cannot calculate the energy which is tolerated when the device acts.
Disclosure of Invention
In view of the above technical problems, the present invention is to provide a test apparatus for an overvoltage protection device.
In order to solve the technical problems, the invention adopts the following technical scheme:
the utility model provides a test equipment of overvoltage protection device for test an overvoltage protection device, including power momentary switch module, MCU controller module, current-voltage detection circuit and man-machine interaction module, during operation is at input termination surge signal source, the output is connected and is awaited measuring novel semiconductor device, trigger switch after setting for the on-time through man-machine interaction module, surge impact novel semiconductor device that awaits measuring, the time is automatic to close surge signal source after reaching, simultaneously, detect the wave form of current-voltage who flows through the device that awaits measuring through current-voltage detection circuit in this period of time that switches on, record and show the screen of man-machine interaction module, the energy that the switching on of novel semiconductor device born is obtained through the calculation.
Preferably, the current-voltage detection circuit has a sampling frequency of up to 10GHz, for ensuring accuracy of the captured current-voltage, so that the displayed current-voltage waveform is closer to the original waveform.
Preferably, the power instantaneous switch module adopts a high-frequency MOS tube as a switch, can reach 10-100 nanoseconds of switch time, and is more accurate in switch time control.
Preferably, the overvoltage protection device comprises:
an N-type substrate with resistivity of 0.2-0.3 ohm/cm;
the first N-type diffusion layers are arranged on the upper side and the lower side of the N-type substrate, the junction depth is 60-100 mu m, and the square resistance is 800-1500 omega/≡;
the P-type diffusion layer is arranged in the first N-type diffusion layer, the diffusion junction depth is 25-30 mu m, and the square resistance is 40-50Ω/≡;
a plurality of second N-type diffusion layers are arranged on the P-type diffusion layers on the front surface, the diffusion junction depth is 10-12 mu m, and the square resistance is 0.6-0.8Ω/≡;
a SiO2 masking layer is arranged on the second N-type diffusion layer around the periphery, and the thickness is 2.5-3.0 mu m;
a front metal layer is arranged on the first N-type diffusion layer on the front, the material is Al-Ti-Ni-Ag, and the thickness is 3.5-4.0 mu m;
and arranging a back metal layer which is made of Al-Ti-Ni-Ag and has a thickness of 3.5-4.0 mu m on the first N-type diffusion layer on the back, thereby forming the NPNP type semiconductor structure.
Preferably, for the overvoltage protection device, N-type substrate materials with different resistivity are selected, and the control of the diffusion concentration and depth of the first N-type diffusion layer is combined for quantitatively controlling the conduction voltage drop of the device after the device enters the protection action.
Preferably, for the overvoltage protection device, the first N-type diffusion layer has a diffusion depth of 80 to 100 microns at an N-type substrate material resistivity of 0.20 to 0.25.
Preferably, for the overvoltage protection device, the first N-type diffusion layer has a diffusion depth of 60 to 80 microns when the N-type substrate material has a resistivity of 0.26 to 0.30.
The invention has the following beneficial effects:
(1) The on time of the switch can be freely adjusted for devices with different bearing capacities, and the range is 1 nanosecond to 1 second;
(2) The test result is matched with data in a waveform form and is output on the LED screen;
(3) The high sampling frequency, up to 10GHz sampling frequency ensures the accuracy of the captured current and voltage, so that the displayed current and voltage waveform is more similar to the original waveform;
(4) The high-frequency MOS tube is used as a switch, so that nanosecond switching time can be achieved, and the switching time is controlled more accurately;
(5) The conduction time is freely set through the human-computer interaction interface, so that the degree of freedom of test operation is higher;
(6) The test result is directly output through the man-machine interaction interface, and is concise and clear.
Drawings
FIG. 1 is a schematic diagram of a test apparatus for an overvoltage protection device according to an embodiment of the present invention;
FIG. 2 is a flow chart of the operation of the test apparatus for an overvoltage protection device according to an embodiment of the present invention;
fig. 3 is a schematic cross-sectional structure of an overvoltage protection device according to an embodiment of the invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1 and 2, a schematic diagram and a working process flow chart of a test device of an overvoltage protection device according to an embodiment of the present invention are shown, where the overvoltage protection device according to the embodiment of the present invention is used for testing an overvoltage protection device, and includes a power momentary switch module, an MCU controller module, a current-voltage detection circuit, and a man-machine interaction module, and in operation, the input end is connected with a surge signal source, the output end is connected with the overvoltage protection device to be tested, a switch is triggered after the man-machine interaction module is set to have a turn-on time, the surge impacts a novel semiconductor device to be tested, and the surge signal source is automatically turned off after the turn-on time, and at the same time, during the turn-on time, a waveform of a current voltage flowing through the device to be tested is detected by the current-voltage detection circuit, and is recorded and displayed on a screen of the man-machine interaction module, and energy born by the turn-on of the novel semiconductor device is obtained by calculation.
Further, in order to achieve a better technical effect, the current-voltage detection circuit has a sampling frequency of up to 10GHz, so as to ensure accuracy of the captured current-voltage, and enable the displayed current-voltage waveform to be closer to the original waveform. The power instantaneous switch module adopts a high-frequency MOS tube as a switch, can achieve 10-100 nanosecond switch time, and is more accurate in switch time control.
Further, referring to fig. 3, a schematic cross-sectional structure of an overvoltage protection device according to an embodiment of the present invention is shown, including:
an N-type substrate 1 with resistivity of 0.2-0.3 ohm/cm;
the first N-type diffusion layers 2 are arranged on the upper side and the lower side of the N-type substrate 1, the junction depth is 60-100 mu m, and the square resistance is 800-1500Ω/≡;
the P-type diffusion layer 3 is arranged in the first N-type diffusion layer 2, the diffusion junction depth is 25-30 mu m, and the square resistance is 40-50Ω/≡;
a plurality of second N-type diffusion layers 4 are arranged on the P-type diffusion layer 3 on the front surface, the diffusion junction depth is 10-12 mu m, and the square resistance is 0.6-0.8 omega/≡;
a SiO2 masking layer 5 is arranged on the second N-type diffusion layer surrounding the periphery, and the thickness is 2.5-3.0 mu m;
a front metal layer 6 is arranged on the first N-type diffusion layer on the front, the material is Al-Ti-Ni-Ag, and the thickness is 3.5-4.0 mu m;
a back metal layer 7 is arranged on the first N-type diffusion layer on the back, the material is Al-Ti-Ni-Ag, and the thickness is 3.5-4.0 mu m, so that the NPNP type semiconductor structure is formed.
Through the overvoltage protection device, the semiconductor chip with the overvoltage protection function has a chip section of 7 layers, and the unidirectional structure is adopted, so that the functional tolerance of unit area can be fully utilized.
The semiconductor chip adopted in the embodiment of the invention selects low-resistivity N-type monocrystalline materials as base materials (namely an N-type substrate 1), phosphorus impurities are diffused on two sides to form a diffusion region with high concentration gradient (namely an N-type diffusion layer 2), then boron diffusion is carried out on two sides to form a boron doped region with medium diffusion depth (namely a P-type diffusion layer 3), phosphorus impurities in a front emission region are diffused to form a high-concentration emitter (high-concentration N-type diffusion layer 4), and finally an electrode contact is formed by adopting a front metal layer 6 and a back metal layer 7 to form an NPNP type semiconductor structure. By selecting low-resistivity monocrystalline materials (namely the N-type substrate 1), and combining with the N-type region of the N-type diffusion layer 2, the concentration gradient of the base region of the PNP tube is regulated, so that the PNP tube cannot enter the saturation region after the NPN tube enters the saturation region, and the conduction voltage drop of the device is far higher than that of a conventional device.
In a specific application example, by selecting single crystal raw materials with different resistivities and combining the control of the diffusion concentration and depth of the N-type diffusion layer 2, quantitative control of the conduction voltage drop of the device after the device enters a protection action can be realized, and free adjustment of the conduction voltage drop between 10 and 14V@20A is realized. For example, the first N-type diffusion layer has a diffusion depth of 80 to 100 microns at an N-type substrate material resistivity of 0.20 to 0.25. When the resistivity of the N-type substrate material is 0.26-0.30, the diffusion depth of the first N-type diffusion layer is 60-80 microns. The conventional semiconductor discharge tube forms positive feedback for the NPN tube and the PNP tube to enter a saturation region, so that a low-resistance conduction mode is realized. According to the invention, the PNP tube cannot enter the saturation region by adjusting the longitudinal diffusion structure, so that the structure can keep high conduction voltage drop of 10-14V@20A under high current.
It should be understood that the exemplary embodiments described herein are illustrative and not limiting. Although one or more embodiments of the present invention have been described with reference to the accompanying drawings, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims.
Claims (6)
1. The test equipment for the overvoltage protection device is characterized by comprising a power instantaneous switch module, an MCU controller module, a current and voltage detection circuit and a man-machine interaction module, wherein the input end of the test equipment is connected with a surge signal source in operation, the output end of the test equipment is connected with a novel semiconductor device to be tested, the switch is triggered after the on time is set through the man-machine interaction module, the surge impacts the novel semiconductor device to be tested, the surge signal source is automatically closed after the time, meanwhile, the waveform of the current and the voltage flowing through the device to be tested is detected through the current and voltage detection circuit in the on time, the waveform is recorded and displayed on a screen of the man-machine interaction module, and the energy born by the on of the novel semiconductor device is calculated;
the overvoltage protection device includes:
an N-type substrate with resistivity of 0.2-0.3 ohm/cm;
the first N-type diffusion layers are arranged on the upper side and the lower side of the N-type substrate, the junction depth is 60-100 mu m, and the square resistance is 800-1500 omega/≡;
the P-type diffusion layer is arranged in the first N-type diffusion layer, the diffusion junction depth is 25-30 mu m, and the square resistance is 40-50Ω/≡;
a plurality of second N-type diffusion layers are arranged on the P-type diffusion layers on the front surface, the diffusion junction depth is 10-12 mu m, and the square resistance is 0.6-0.8Ω/≡;
a SiO2 masking layer is arranged on the second N-type diffusion layer surrounding the periphery, and the thickness is 2.5-3.0 mu m;
a front metal layer is arranged on the first N-type diffusion layer on the front, the material is Al-Ti-Ni-Ag, and the thickness is 3.5-4.0 mu m;
and arranging a back metal layer which is made of Al-Ti-Ni-Ag and has a thickness of 3.5-4.0 mu m on the first N-type diffusion layer on the back, thereby forming the NPNP type semiconductor structure.
2. The test apparatus for overvoltage protection device according to claim 1, wherein the current-voltage detection circuit has a sampling frequency of up to 10GHz for ensuring accuracy of the captured current-voltage so that the displayed current-voltage waveform is closer to the original waveform.
3. The test device of the overvoltage protection device according to claim 1, wherein the power instantaneous switch module adopts a high-frequency MOS tube as a switch, can reach a switch time of 10-100 nanoseconds, and is more accurate in switch time control.
4. The test apparatus of overvoltage protection device according to claim 1, wherein for said overvoltage protection device, N-type substrate materials of different resistivity are selected, in combination with controlling the diffusion concentration and depth of the first N-type diffusion layer, for quantitative control of the on-voltage drop of the device after the device enters a protection action.
5. The apparatus for testing an overvoltage protection device according to claim 4, wherein the first N-type diffusion layer has a diffusion depth of 80 to 100 μm for the overvoltage protection device when the N-type substrate material has a resistivity of 0.20 to 0.25.
6. The apparatus for testing an overvoltage protection device according to claim 4, wherein the first N-type diffusion layer has a diffusion depth of 60 to 80 μm when the N-type substrate material resistivity is 0.26 to 0.30 for the overvoltage protection device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010285697.7A CN111638435B (en) | 2020-04-13 | 2020-04-13 | Test equipment for overvoltage protection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010285697.7A CN111638435B (en) | 2020-04-13 | 2020-04-13 | Test equipment for overvoltage protection device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111638435A CN111638435A (en) | 2020-09-08 |
| CN111638435B true CN111638435B (en) | 2023-04-25 |
Family
ID=72330594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010285697.7A Active CN111638435B (en) | 2020-04-13 | 2020-04-13 | Test equipment for overvoltage protection device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111638435B (en) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103248339A (en) * | 2013-04-24 | 2013-08-14 | 深圳市中电华星电子技术有限公司 | High energy surge rectangular-wave signal generation circuit |
| CN103399263B (en) * | 2013-07-24 | 2015-11-11 | 西安交通大学 | The Integrated Measurement System of surge protection module DC parameter and measuring method thereof |
| CN105301381B (en) * | 2014-07-31 | 2019-03-26 | 展讯通信（上海）有限公司 | Automatic surge test system and test method |
| CN104865513B (en) * | 2015-06-05 | 2017-06-06 | 山东晶导微电子有限公司 | A kind of surge electric current test circuit for carrying detection function |
| CN108110063A (en) * | 2018-01-08 | 2018-06-01 | 浙江明德微电子股份有限公司 | A kind of unidirectional TVS chips |
| CN209056928U (en) * | 2018-12-29 | 2019-07-02 | 华立科技股份有限公司 | Surge protective device and its test macro |
| CN110729344B (en) * | 2019-09-05 | 2023-08-11 | 深圳市德芯半导体技术有限公司 | Bidirectional semiconductor discharge tube and preparation method thereof |
-
2020
- 2020-04-13 CN CN202010285697.7A patent/CN111638435B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN111638435A (en) | 2020-09-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Fayyaz et al. | Transient robustness testing of silicon carbide (SiC) power MOSFETs | |
| CN100492658C (en) | Voltage controlled bidirectional switch | |
| CN108508342A (en) | A kind of IGBT short circuit overcurrents detection circuit | |
| Qi et al. | Comprehensive assessment of avalanche operating boundary of SiC planar/trench MOSFET in cryogenic applications | |
| CN212514763U (en) | IGBT saturation conduction voltage measuring circuit | |
| CN111638435B (en) | Test equipment for overvoltage protection device | |
| Chen et al. | A thermo-sensitive electrical parameter with maximum dIC/dt during turn-off for high power Trench/Field-Stop IGBT modules | |
| CN205921376U (en) | Overvoltage protection circuit | |
| CN201995175U (en) | LED driving circuit with overheat protection function | |
| CN109742139B (en) | LIGBT-based single-gate control voltage and current sampling device | |
| Su et al. | A novel electrical evaluation approach for inhomogeneous current distribution in parallel-connected IGBT modules | |
| Zhao et al. | Investigation on SiC MOSFET’s Avalanche and Short-Circuit Failure Mechanism | |
| CN116609629A (en) | Power semiconductor device health monitoring circuit and method | |
| CN112002756B (en) | Semiconductor device with IGBT cell and current-voltage sensing and control unit | |
| Sun et al. | Experimental study of bias dependence of pulsed laser-induced single-event transient in SiGe HBT | |
| CN209267455U (en) | Non-isolated boost-buck power circuit and non-isolated boost-buck power module | |
| Zhang et al. | Improved turn-on behavior in a diode-triggered silicon-controlled rectifier for high-speed electrostatic discharge protection | |
| TW201411860A (en) | Method and apparatus for increasing conductivity of solar cell, and solar cell | |
| Pan et al. | Active variable gate drive for suppressing IGBT collector current overshoot | |
| CN216848015U (en) | IGBT conduction loss test circuit and system | |
| CN109786450B (en) | Grid-controlled sampling device based on LIGBT | |
| CN109801962B (en) | Double-gate control sampling device based on LIGBT | |
| Ahmed et al. | Characterization of the static and dynamic behavior of a SiC BJT | |
| JP3534082B2 (en) | On-chip temperature detector | |
| CN110707905B (en) | Method for realizing control based on IGBT |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |