CN111628745A - Signal transmission line, duplexer, multiplexer, and communication apparatus - Google Patents
Signal transmission line, duplexer, multiplexer, and communication apparatus Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/0138—Electrical filters or coupling circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/213—Frequency-selective devices, e.g. filters combining or separating two or more different frequencies
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
Abstract
The invention discloses a signal transmission line, a duplexer, a multiplexer and communication equipment. The duplexer comprises an antenna, a transmitting filter and a receiving filter which are formed based on an acoustic wave resonator, and an impedance converter, wherein the impedance converter is the signal transmission line; the head end of the first metal signal line layer of the signal transmission line is connected with an antenna, and the tail end of the second metal signal line layer is connected with the antenna end of a receiving filter or a transmitting filter. The signal transmission line in the technical scheme of the invention has higher characteristic impedance, and the electrical length of the required transmission line is shortened while the impedance conversion is realized in the design of the duplexer, so that the occupied space of the transmission line is reduced, and the miniaturization design of devices is facilitated. In addition, an electromagnetic coupling path exists between the signal transmission line and the coupling unit in the receiving filter and/or the transmitting filter, and the out-of-band rejection characteristic and the isolation characteristic of the corresponding frequency band can be improved by adjusting the coupling mode and the coupling strength of the electromagnetic coupling path.
Description
Technical Field
The present invention relates to the field of filter technology, and in particular, to a signal transmission line, a duplexer, a multiplexer, and a communication device.
Background
The recent trend toward miniaturization and high performance of communication devices has been increasing, posing even greater challenges to rf front-ends. In the radio frequency communication front end, on one hand, miniaturization is realized by reducing the sizes of a chip and a packaging substrate, and on the other hand, better performance is realized by reducing loss sources and better resonator matching design. In the existing filter structure, there are more passive devices for matching, and meanwhile, various structures such as more inductors, capacitors, couplings and the like are additionally introduced for improving specific performances such as roll-off insertion loss and the like.
A typical structure of a general filter is shown in fig. 1, and fig. 1 is a schematic view of a structure of an acoustic wave filter according to the related art. In this filter 100, inductors L1 and L2 and resonators (generally referred to as series resonators) S11 to S14 are provided between an input terminal T1 and an output terminal T2, and resonators P12 to P14 (generally referred to as parallel resonators) and inductors L3 to L5 are provided in a plurality of branches (generally referred to as parallel branches) between a connection point of each series resonator and a ground terminal. A mass loading layer is added to each parallel resonator, and the frequency of the parallel resonator and the frequency of the series resonator are different to form the passband of the filter.
Fig. 2 is a schematic sectional view of a conventional film bulk acoustic resonator. As shown in fig. 2, in the thin film bulk acoustic resonator 300, 31 is a semiconductor substrate material, 35 is an air cavity obtained by etching, a bottom electrode 33 of the thin film bulk acoustic resonator is deposited on the semiconductor substrate 31, 32 is a piezoelectric thin film material, and 34 is a top electrode. The dashed box area is the overlapping area of the air cavity 35, the top electrode 34, the bottom electrode 33, and the piezoelectric layer 32, which is the resonant active area. Wherein, the material of the top electrode and the bottom electrode can be formed by gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), titanium Tungsten (TiW), aluminum (Al), titanium (Ti) and the like; the material of the piezoelectric layer may be aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO3), Quartz (Quartz), potassium niobate (KNbO3), lithium tantalate (LiTaO3), or the like. The thickness of the piezoelectric film is typically less than 10 microns. The aluminum nitride film is polycrystalline or monocrystalline, and the growth method is sputtering or Metal Organic Chemical Vapor Deposition (MOCVD).
Fig. 3 is a schematic diagram of impedance frequency characteristics of a bulk acoustic wave resonator (BAW) according to the related art. The main resonance of the BAW resonator has two resonance frequency points: one is fs when the impedance value of the resonant circuit reaches a minimum value, and fs is defined as a series resonance frequency point of the resonator; and the other is fp when the impedance value of the resonant circuit reaches a maximum value, and fp is defined as a parallel resonance frequency point of the resonator.
As shown in fig. 4, a scheme in the prior art is that a capacitor 50 branch is added between an antenna end of a duplexer transmit filter and a certain node of a transmit filter parallel branch, and a capacitance value of the branch is adjusted to adjust a transmission characteristic of a high-frequency signal in the branch, so that the high-frequency signal of the branch and the high-frequency signal leaked to the transmit filter have the same amplitude and opposite phases, so that an out-of-band impedance of a receive filter changes, and an out-of-band rejection characteristic and an isolation characteristic of a corresponding frequency band are improved.
Although the above method achieves the purpose of improving the out-of-band rejection characteristic and the isolation characteristic of the duplexer, the capacitor needs to be implemented by additionally arranging an interdigital capacitor on a chip, which inevitably leads to the problems of the upsizing of a filter circuit and the upsizing of a high-frequency module comprising the filter circuit.
As for duplexers, how to further reduce the device size and improve the out-of-band rejection characteristics and isolation characteristics is a constant concern.
Disclosure of Invention
In view of the above, the present invention provides a signal transmission line, a duplexer, a multiplexer, and a communication device, wherein the duplexer and the multiplexer have smaller sizes and better out-of-band rejection characteristics and isolation characteristics.
To achieve the above object, according to a first aspect of the present invention, there is provided a signal transmission line.
The signal transmission line comprises a top metal layer, a first metal signal line layer, a second metal signal line layer and a bottom metal layer which are arranged in a superposed mode; a first dielectric layer is arranged between the top metal layer and the first metal signal line layer, a second dielectric layer is arranged between the first metal signal line layer and the first metal signal line layer, and a third dielectric layer is arranged between the second metal signal line layer and the bottom metal layer; the first metal signal line layer and the second metal signal line layer are provided with set widths, the second medium layer is provided with a through hole, and the tail end of the first metal signal line layer is electrically connected with the head end of the second metal signal line layer through the through hole.
Optionally, the widths W of the first metal signal line layer and the second metal signal line layer are equal, the first metal signal line layer and the second metal signal line layer are arranged in a staggered manner along a direction parallel to the top metal layer, the staggered distance between the first metal signal line layer and the second metal signal line layer is S, and S is greater than or equal to 0 and less than or equal to 2W.
Optionally, the signal transmission line has a characteristic impedance greater than 60 ohms.
Optionally, the thicknesses of the first dielectric layer and the third dielectric layer are the same.
Optionally, the first metal signal line layer and the second metal signal line layer are the same thickness.
According to a second aspect of the present invention, there is provided a duplexer.
The duplexer comprises an antenna, a transmitting filter and a receiving filter which are formed based on an acoustic wave resonator, and an impedance converter, wherein the impedance converter is a signal transmission line; the head end of the first metal signal line layer of the signal transmission line is connected with an antenna, and the tail end of the second metal signal line layer is connected with the antenna end of a receiving filter or a transmitting filter.
Optionally, the tail end of the second metal signal line layer is connected with the antenna end of the receiving filter; the parallel branch of the transmitting filter and/or the receiving filter is provided with a coupling unit, and the coupling unit and the impedance transformer are electromagnetically coupled.
Optionally, the coupling unit comprises a first inductance and a second inductance; the first inductor is connected in parallel with the resonator on one parallel branch of the filter; the first end of the second inductor is connected with the near-ground end of the resonator, and the second end of the second inductor is grounded.
Optionally, the coupling unit comprises a first inductance and a second inductance; the first ends of the first inductor and the second inductor are connected with the near-ground end of the parallel resonator; the second end of the first inductor is suspended, and the second end of the second inductor is grounded; a first series inductor is arranged between the output end of the transmitting filter and the signal transmitting end, and a first parasitic capacitor is formed between the first inductor of the coupling unit in the transmitting filter and the first series inductor; a second series inductor is arranged between the output end of the receiving filter and the signal receiving end, and a second parasitic capacitor is formed between the first inductor and the second series inductor of the coupling unit in the receiving filter.
Optionally, the impedance transformer and the coupling unit are both disposed in a package substrate of the duplexer.
Optionally, the impedance transformer is disposed in a package substrate of the duplexer; the coupling unit is disposed on an upper surface of the package substrate.
Optionally, the impedance transformer is disposed in a package substrate of the duplexer; one of the first inductor and the second inductor is disposed in the package substrate, and the other is disposed on the upper surface of the package substrate.
Optionally, the impedance transformer and the coupling unit are both disposed in a lower wafer of a receive filter of the duplexer.
Optionally, the impedance transformer is disposed in a lower wafer of a receive filter of the duplexer; the coupling units are all arranged on the upper surface of the packaging substrate of the duplexer.
According to a third aspect of the present invention, there is provided a multiplexer including the duplexer of the present invention.
According to a fourth aspect of the present invention, there is provided a communication device comprising the duplexer of the present invention.
The technical scheme of the invention has the following beneficial effects: a. in the duplexer design, the electrical length of the required transmission line is shortened while the impedance conversion is realized, the occupied space of the transmission line is reduced, and the miniaturization design of devices is facilitated; b. the transmission line has a high quality factor, which is beneficial to improving the insertion loss of the receiving filter.
Drawings
For purposes of illustration and not limitation, the present invention will now be described in accordance with its preferred embodiments, particularly with reference to the accompanying drawings, in which:
fig. 1 is a schematic diagram of one structure of an acoustic wave filter according to the prior art;
FIG. 2 is a schematic cross-sectional view of a conventional FBAR;
FIG. 3 is a schematic diagram of impedance frequency characteristics of a bulk acoustic wave resonator (BAW) according to the prior art;
fig. 4 is a schematic diagram of a circuit architecture of a duplexer according to the prior art;
fig. 5 is a schematic diagram of a circuit architecture of a duplexer according to a first embodiment of the present invention;
fig. 6 shows, for example, the B25 band, the relationship between the characteristic impedance of a transmission line and the electrical length of the transmission line in the architecture of a transmission line matched duplexer;
FIG. 7 is a schematic diagram of the structure of an HZ-TL transmission line in accordance with an embodiment of the present invention;
FIG. 8 is a cross-sectional view of the HZ-TL structure shown in FIG. 7 at the AA' dashed line location;
fig. 9 is a schematic diagram of a strip transmission line in the prior art as a comparative example;
fig. 10 is a schematic view of another strip line in the prior art as another comparative example;
fig. 11 shows the characteristic impedance of HZ-TL for different values of s compared with the characteristic impedance of the strip transmission line structure under the condition that the parameter h2 of the HZ-TL structure is h 1;
fig. 12 shows a schematic diagram of the corresponding transmission line electric field distribution when the HZ-TL structural parameter s is 0;
fig. 13 shows the HZ-TL quality factor for different s values compared to the quality factor of the strip transmission line structure under the condition that the HZ-TL structure parameter h2 is h 1;
fig. 14 is a schematic diagram showing a comparison of insertion loss characteristics of the duplexer of the first embodiment of the present invention and the duplexer of the comparative example;
fig. 15 is a schematic diagram showing a comparison of isolation characteristics of the duplexer of the first embodiment of the present invention and the duplexer of the comparative example;
fig. 16 is a schematic diagram of a circuit architecture of a duplexer according to a second embodiment of the present invention;
fig. 17 is a schematic diagram showing a comparison of insertion loss characteristics of a duplexer shown in a second embodiment of the present invention and a duplexer shown in a comparative example;
fig. 18 is a schematic diagram showing a comparison of isolation characteristics of the duplexer shown in the second embodiment of the present invention and the duplexer shown in the comparative example;
fig. 19 is a schematic diagram of a circuit architecture of a duplexer according to a third embodiment of the present invention;
fig. 20 is a diagram showing a comparison of insertion loss characteristics of a duplexer of a third embodiment of the present invention and a duplexer of a comparative example;
fig. 21 is a schematic diagram showing a comparison of isolation characteristics of a duplexer shown in a third embodiment of the present invention and a duplexer shown in a comparative example;
fig. 22 is a schematic diagram of a circuit architecture of a duplexer according to a fourth embodiment of the present invention;
fig. 23 is a schematic diagram of a circuit architecture of a duplexer according to a fifth embodiment of the present invention;
fig. 24 is a schematic diagram of a circuit architecture of a duplexer according to a fifth embodiment of the present invention;
fig. 25 is a schematic sectional view of a first structure of a duplexer according to an embodiment of the present invention;
fig. 26 is a schematic sectional view of a second structure of a duplexer according to an embodiment of the present invention;
fig. 27 is a schematic sectional view of a third structure of a duplexer according to an embodiment of the present invention.
Detailed Description
In the embodiment of the invention, based on the circuit architecture of the transmission line matching duplexer, a high characteristic impedance transmission line (HZ-TL) structure with ground planes at two sides of two adjacent signal lines in the middle is designed and used, and the transmission line structure can realize further increase of the characteristic impedance of the transmission line under certain process conditions. High characteristic impedance transmission lines are advantageous for shortening the electrical length of the transmission line because the characteristic impedance of the transmission line is inversely related to the electrical length of the transmission line in the design. Due to the structural characteristics and the shorter electrical length of the transmission line, the space occupied by the transmission line in the device is reduced, so that the miniaturization design of the device is facilitated; and the quality factor of such a transmission line will be improved with respect to microstrip lines or striplines. The above two characteristics (short electrical length and high quality factor) can reduce the loss of the transmission line in the circuit, thereby improving the insertion loss characteristic of the receiving filter.
Meanwhile, electromagnetic coupling exists between the HZ-TL in the circuit architecture of the transmission line matched duplexer and a first coupling unit in one parallel branch in the receiving filter to form a first coupling path, and electromagnetic coupling exists between the HZ-TL and a second coupling unit in one parallel branch in the transmitting filter to form a second coupling path. The coupling mode and the coupling strength between the HZ-TL transmission line and the coupling unit are adjusted to change the coupling characteristics (including signal amplitude and signal phase) of the first coupling path and the second coupling path, so that the signal of the first coupling path has the same amplitude and opposite phase with the signal leaked to the receiving filter, and the signal of the second coupling path has the same amplitude and opposite phase with the signal leaked to the transmitting filter, thereby improving the out-of-band rejection characteristic and the isolation characteristic of the corresponding frequency band. The first coupling path and the second coupling path herein may coexist. Embodiments of the present invention will be described below with reference to the accompanying drawings.
Fig. 5 is a schematic diagram of a circuit architecture of a duplexer according to a first embodiment of the present invention. As shown in fig. 5, in the duplexer 301, D1 is a transmit filter, and D2 is a receive filter. The impedance converter is realized by a high characteristic impedance transmission line (HZ-TL), the first coupling unit LS1 is composed of a first inductor LS1a and a second inductor LS1b, wherein LS1a is a parallel inductor of a resonator in one parallel branch of the receiving filter, LS1b is a grounding inductor of the parallel branch, and LS1a and LS1b are used for adjusting circuit characteristics. The HZ-TL is electromagnetically coupled to the first coupling unit to form a first coupling path (CP-R).
In fig. 5, Z2 is the input impedance looking from the signal input terminal of the receiving filter into the direction of the receiving filter (i.e., a point-to-ground impedance), Z1 is the input impedance looking from the antenna terminal into the HZ-TL and the receiving filter (i.e., B point-to-ground impedance), and Z2, which has a low input impedance, is converted into a high input impedance Z1 in the HZ-TL passband frequency band of the transmitting filter, thereby achieving a good matching characteristic of the duplexer. Z1 and Z2 satisfy the following relationship:
wherein Z0 is the characteristic impedance of HZ-TL, beta is the wavenumber of the high frequency signal in HZ-TL, and L is the electrical length of HZ-TL, which can be obtained from the following two equations:
Z1＝jZ0·tanβL
wherein
Namely, it is
tan β L is a monotonically increasing function, λgIs the wavelength at which the high frequency signal propagates in the HZ-TL.
The characteristic impedance of HZ-TL is inversely related to its electrical length. Therefore, in the circuit structure of the transmission line matching duplexer, under the condition of realizing impedance transformation required by design, the electric length of the transmission line can be effectively shortened by adopting the HZ-TL structure, thereby being beneficial to the miniaturization design of the duplexer.
Fig. 6 illustrates, by way of example, the B25 band, which shows the relationship between the characteristic impedance of a transmission line and the electrical length of the transmission line in a transmission line matched duplexer architecture, where the electrical length of the transmission line decreases as the characteristic impedance of the transmission line increases in the design.
Fig. 7 is a schematic diagram of the structure of an HZ-TL transmission line in an embodiment in accordance with the invention. As shown in fig. 7, the HZ-TL includes four layers of metal (L1, L2, L3, and L4 from top to bottom) and three layers of dielectric (a first dielectric layer is embedded between L1 and L2, a second dielectric layer is embedded between L2 and L3, and a third dielectric layer is embedded between L3 and L4), a top layer of metal L1 and a bottom layer of metal L4 are set as a reference ground plane, a middle two layers of metal L2 and L3 are set as signal lines, and two layers of signal lines are electrically connected through a metal VIA 23.
FIG. 8 is a cross-sectional view of the HZ-TL structure shown in FIG. 7 at the AA' dashed line location. As shown in fig. 8, the thicknesses of the film layers (metal layer and dielectric layer) of HZ-TL are symmetrically arranged in the Stack direction, the thickness of the first dielectric layer is h1, the thickness of the second dielectric layer is h2, the thickness of the third dielectric layer is h1, the width of the signal line is w, the thickness of the signal line is t, and the offset distance between the upper signal line and the lower signal line is s.
Fig. 9 is a schematic diagram of a strip transmission line in the related art as a comparative example, and fig. 10 is a schematic diagram of another strip transmission line in the related art as another comparative example. In order to avoid parasitic capacitance generated between the transmission line and the resonator in the receiving filter or/and the transmitting filter, and to prevent the performance of the device from deteriorating, the microstrip transmission line structure is not selected as the impedance transformer in the transmission line matching duplexer architecture. Fig. 11 shows the characteristic impedance of HZ-TL for different values of s compared with the characteristic impedance of the strip transmission line structure (see fig. 9 and 10 for the structural parameters) under the condition that the structural parameter h2 is h 1. As can be seen from fig. 11, under the condition that the process conditions are constant and the space occupied by the transmission line is considered (the distance between the signal line and the reference ground in the strip line cannot be infinitely increased), the characteristic impedance of the HZ-TL structure is at least 30% higher than that of the strip line structure, and is maximum when the parameter s of the HZ-TL structure is 0 (other parameters are not changed).
Fig. 12 shows a schematic diagram of the corresponding transmission line electric field distribution when the HZ-TL structural parameter s is 0. When s is 0, the downward electric field of the upper signal wire and the upward electric field of the lower signal wire completely cancel each other, so that the parasitic capacitance of the transmission line with the unit electrical length is reduced, and the characteristic impedance is increased; when s is not equal to 0, the downward electric field of the upper signal line and the upward electric field of the lower signal line are partially cancelled, the larger s is, the less the electric field is cancelled, the larger the parasitic capacitance of the transmission line per unit electrical length is, and the smaller the characteristic impedance is.
Fig. 13 shows the HZ-TL quality factor for different s values compared with the quality factor of the strip transmission line structure (see fig. 9 and 10 for the structural parameters) under the condition that the HZ-TL structural parameter h2 is h 1. As can be seen from the figure, under the condition that other structural parameters are fixed, the quality factor of the transmission line is the highest when the HZ-TL is equal to 0, and a higher transmission line quality factor is beneficial to improving the insertion loss of the passband of the receiving filter. Although the quality factor of the strip line 2 is close to that of the HZ-TL, the occupied space is much larger than that of the HZ-TL, which is not favorable for the miniaturized design of the device.
Referring to fig. 5, the impedance transformer has an HZ-TL structure, and the HZ-TL transmission line is electromagnetically coupled to the first coupling unit to form a first coupling path CP-R. The transmission characteristics (signal amplitude and phase) of the high-frequency signal in the first coupling path can be adjusted by changing the coupling mode and coupling strength between the HZ-TL and the first coupling unit, so that the high-frequency signal of the first coupling path CP-R and the high-frequency signal leaked to the receiving filter have the same amplitude and opposite phases, the out-of-band impedance of the receiving filter is changed, and the out-of-band rejection characteristic and the isolation characteristic of the corresponding frequency band are improved. In addition, the coupling mode and the coupling strength of the coupling path only act out-of-band and do not affect the in-band characteristics.
The corresponding circuit architecture of the circuit shown in fig. 5 without a coupling path is a comparative example of the present invention. Fig. 14 is a diagram showing a comparison between the insertion loss characteristics of the duplexer of the first embodiment of the present invention and the duplexer of the comparative example. Wherein solid lines indicated by small boxes correspond to the insertion loss characteristic of the transmission filter of embodiment 1, solid lines indicated by small circles correspond to the insertion loss characteristic of the reception filter of embodiment 1, solid lines not indicated correspond to the insertion loss characteristic of the transmission filter of comparative example, and broken lines correspond to the insertion loss characteristic of the reception filter of comparative example. As can be seen from fig. 14, the out-of-band rejection characteristics of the reception filter in the pass band of the transmission filter are significantly improved. Fig. 15 is a schematic diagram showing a comparison of isolation characteristics of the duplexer of the first embodiment of the present invention and the comparative duplexer, in which a dotted line and a solid line correspond to the comparative example and example 1, respectively. As can be seen from fig. 15, the isolation characteristic of the transmission filter passband frequency band is significantly improved.
Fig. 16 is a schematic diagram of a circuit architecture of a duplexer according to a second embodiment of the present invention. As shown in fig. 16, in the duplexer 302, the impedance converter is implemented by an HZ-TL structure, and the second coupling unit is composed of a first inductor LS2a and a second inductor LS2b, where LS2a is a parallel inductor of a resonator in one of parallel branches of the emission filter, LS2b is a ground inductor of the parallel branch, and LS2a and LS2b are both used for adjusting circuit characteristics. The second coupling unit is electromagnetically coupled to the HZ-TL to form a second coupling path (CP-T). The transmission characteristics (signal amplitude and phase) of the high-frequency signal in the second coupling path can be adjusted by changing the coupling mode and coupling strength between the HZ-TL and the second coupling path, so that the high-frequency signal of the second coupling path CP-T and the high-frequency signal leaked to the transmitting filter have the same amplitude and opposite phases, the out-of-band impedance of the transmitting filter is changed, and the out-of-band rejection characteristic and the isolation characteristic of the corresponding frequency band are improved. In addition, the coupling mode and the coupling strength of the coupling path only act out-of-band and do not affect the in-band characteristics.
Fig. 17 is a diagram showing a comparison between the insertion loss characteristics of the duplexer of the second embodiment of the present invention and the duplexer of the comparative example. In fig. 17, solid lines indicated by small boxes correspond to the insertion loss characteristic of the transmission filter of example 2, solid lines indicated by small circles correspond to the insertion loss characteristic of the reception filter of example 2, solid lines not indicated correspond to the insertion loss characteristic of the reception filter of comparative example, and broken lines correspond to the insertion loss characteristic of the transmission filter of comparative example. As can be seen from fig. 17, with the technical solution of the second embodiment of the present invention, the out-of-band rejection characteristic of the transmission filter in the passband of the reception filter is significantly improved. Fig. 18 is a diagram showing a comparison between isolation characteristics of the duplexer of the second embodiment of the present invention and the duplexer of the comparative example. In fig. 18, the solid line and the broken line correspond to the second example and the comparative example, respectively. As can be seen from fig. 18, the isolation characteristics in the pass band of the reception filter are significantly improved.
Fig. 19 is a schematic diagram of a circuit architecture of a duplexer according to a third embodiment of the present invention. As shown in fig. 19, in the duplexer 303, the impedance converter is implemented by an HZ-TL structure, and the first coupling unit LS1 is composed of a first inductor LS1a and a second inductor LS1b, where LS1a is a parallel inductor of a resonator in one of parallel branches of the receiving filter, LS1b is a ground inductor of the parallel branch, and LS1a and LS1b are both used for adjusting circuit characteristics. There is an electromagnetic coupling between the HZ-TL and the coupling unit forming a first coupling path (CP-R). Meanwhile, the second coupling unit is composed of a first inductor LS2a and a second inductor LS2b, wherein LS2a is a parallel inductor of a resonator in one parallel branch of the emission filter, LS2b is a grounding inductor of the parallel branch, and LS2a and LS2b are both used for adjusting circuit characteristics. There is an electromagnetic coupling between the HZ-TL and the second coupling unit forming a second coupling path (CP-T).
The transmission characteristic of the high-frequency signal in the first coupling path CP-R (second coupling path CP-T) can be adjusted by changing the coupling mode and coupling strength between HZ-TL and the parallel inductor LS1(LS2), so that the high-frequency signal in the first coupling path CP-R (second coupling path CP-T) has the same amplitude and opposite phase with the high-frequency signal leaked to the receiving filter (transmitting filter), and the out-of-band impedance of the transmitting filter (receiving filter) is changed, thereby improving the out-of-band rejection characteristic and isolation characteristic of the corresponding frequency band. In addition, the coupling mode and the coupling strength of the coupling path only act out-of-band and do not affect the in-band characteristics.
Fig. 20 is a diagram showing a comparison between the insertion loss characteristics of the duplexer of the third embodiment of the present invention and the duplexer of the comparative example. In fig. 20, solid lines indicated by small boxes correspond to the insertion loss characteristic of the transmission filter of example 2, solid lines indicated by small circles correspond to the insertion loss characteristic of the reception filter of example 3, solid lines not indicated correspond to the insertion loss characteristic of the reception filter of comparative example, and broken lines correspond to the insertion loss characteristic of the transmission filter of comparative example. As can be seen from fig. 20, the out-of-band rejection characteristics of the transmission filter in the reception filter passband band and the reception filter in the transmission filter passband band are both significantly improved. Fig. 21 is a schematic diagram showing a comparison between the isolation characteristics of the duplexer of the third embodiment of the present invention and the duplexer of the comparative example, and it can be seen from the diagram that the isolation characteristics of the reception filter and the transmission filter in the pass band are both significantly improved.
Fig. 22 is a schematic diagram of a circuit architecture of a duplexer according to a fourth embodiment of the present invention. As shown in fig. 22, in the duplexer 304, the first coupling unit LS1 is composed of a first inductor LS1a and a second inductor LS1b, where LS1b is a grounded inductor of one parallel branch of the receiving filter, the first inductor LS1a is connected to a non-grounded terminal of the second inductor LS1b, and the other end of the first inductor LS1b is floating, and a parasitic capacitor C1 exists between the first inductor LS1a and the signal output end matching inductor of the receiving filter. There is an electromagnetic coupling between the HZ-TL and the first coupling unit forming a first coupling path (CP-R). The final effect is close to that of the first embodiment of the present invention.
Fig. 23 is a schematic diagram of a circuit architecture of a duplexer according to a fifth embodiment of the present invention. As shown in fig. 22, in the duplexer 305, the second coupling unit LS2 is composed of a first inductor LS2a and a second inductor LS2b, where LS2b is a grounded inductor of one of the parallel branches of the transmit filter, the first inductor LS2a is connected to the non-grounded end of the second inductor LS2b, and the other end of the first inductor LS2a is floating, and a parasitic capacitor C2 exists between the first inductor LS2a and the signal output end matching inductor of the receive filter. The second coupling unit is electromagnetically coupled to the HZ-TL to form a second coupling path (CP-T). The final effect is close to that of the second embodiment of the present invention.
Fig. 24 is a schematic diagram of a circuit architecture of a duplexer according to a fifth embodiment of the present invention. As shown in fig. 24, in the duplexer 306, the first coupling unit LS1 is composed of a first inductor LS1a and a second inductor LS1b, where LS1b is a grounded inductor of one parallel branch of the receiving filter, the first inductor LS1a is connected to a non-grounded terminal of the second inductor LS1b, and the other end of the first inductor LS1b is floating, and a parasitic capacitor C1 exists between the first inductor LS1a and the matching inductor of the signal output terminal of the receiving filter. The HZ-TL is electromagnetically coupled to the first coupling unit to form a first coupling path (CP-R). Meanwhile, the second coupling unit LS2 is composed of a first inductor LS2a and a second inductor LS2b, where LS2b is a grounded inductor of one of the parallel branches of the transmit filter, the first inductor LS2a is connected to the non-grounded end of the second inductor LS2b, the other end of the first inductor LS2a is floating, and a parasitic capacitor C2 exists between the first inductor LS2a and the signal output end matching inductor of the receive filter. The second coupling unit is electromagnetically coupled to the HZ-TL to form a second coupling path (CP-T). The final effect is close to that of the third embodiment of the present invention.
Fig. 25 is a schematic cross-sectional view of a first structure of a duplexer according to an embodiment of the present invention. As shown in fig. 25, in a duplexer 901, 1 and 2 are a first wafer and a second wafer of a transmit filter, respectively, a resonator 5 of the transmit filter is disposed on 1, and 1 and 2 form a transmit filter chip by gold bonding. 3. 4 are respectively a first wafer and a second wafer of the receiving filter, a resonator 6 of the receiving filter is arranged on the 3, and the 3 and the 4 form a receiving filter chip by gold bonding. And 9, a packaging substrate, wherein the receiving filter chip and the transmitting filter chip are inversely arranged on the packaging substrate through the ball-planting 8. 12. 13, 14 together form an HZ-TL, where 12 is the signal line of the HZ-TL, 13, 14 is the metallic ground plane of the HZ-TL, 11 is the receiving filter first coupling unit LS1, the HZ- TL signal lines 12 and 11 are close to each other forming a first coupling path CP-R, 10 is the transmitting filter second coupling unit LS2, the HZ- TL signal lines 12 and 10 are close to each other forming a second coupling path CP-T.
Fig. 26 is a schematic sectional view of a second structure of a duplexer according to an embodiment of the present invention. The duplexer 902 shown in fig. 26 differs from the duplexer 901 shown in fig. 25 in that the receiving filter first coupling unit LS2(11) is provided as a lumped element on the upper surface of the package substrate 9, and the HZ- TL signal lines 12 and 11 are close to each other to form the first coupling path CP-R. Similarly, the second coupling unit LS2 of the transmitting filter can also be disposed on the upper surface of the package substrate 9 in the form of lumped elements.
Fig. 27 is a schematic sectional view of a third structure of a duplexer according to an embodiment of the present invention. The duplexer 903 shown in fig. 27 is different from the duplexer 901 shown in fig. 25 in that HZ-TL and the inductor 11 are disposed on the second wafer of the receiving filter, and the HZ-TL signal line 12 and the first coupling unit are close to each other to form a first coupling path CP-R.
According to the technical scheme of the invention, electromagnetic coupling exists between the HZ-TL and a first coupling unit in one parallel branch in a receiving filter to form a first coupling path, and electromagnetic coupling exists between the HZ-TL and a second coupling unit in one parallel branch in an emitting filter to form a second coupling path. Coupling modes and coupling strengths between the HZ-TL and the coupling units are adjusted to adjust coupling characteristics (signal amplitude and signal phase) of the first coupling path and the second coupling path, so that the signal of the first coupling path is identical to the signal leaked to the receiving filter in amplitude and opposite in phase, and the signal of the second coupling path is identical to the signal leaked to the transmitting filter in amplitude and opposite in phase, and therefore the out-of-band rejection characteristic and the isolation characteristic of the corresponding frequency band are improved.
According to the duplexer structure of the present invention, a multiplexer can be formed, and the duplexer can also be applied to communication equipment.
The above-described embodiments should not be construed as limiting the scope of the invention. Those skilled in the art will appreciate that various modifications, combinations, sub-combinations, and substitutions can occur, depending on design requirements and other factors. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (16)
1. A signal transmission line is characterized by comprising a top metal layer, a first metal signal line layer, a second metal signal line layer and a bottom metal layer which are arranged in a superposition mode;
a first dielectric layer is arranged between the top metal layer and the first metal signal line layer, a second dielectric layer is arranged between the first metal signal line layer and the first metal signal line layer, and a third dielectric layer is arranged between the second metal signal line layer and the bottom metal layer;
the first metal signal line layer and the second metal signal line layer are provided with set widths, the second medium layer is provided with a through hole, and the tail end of the first metal signal line layer is electrically connected with the head end of the second metal signal line layer through the through hole.
2. The signal transmission line of claim 1, wherein the widths W of the first and second metal signal line layers are equal, the first and second metal signal line layers are staggered in a direction parallel to the top metal layer by a distance S, and S is 0 ≦ 2W.
3. The signal transmission line of claim 1, wherein the signal transmission line has a characteristic impedance greater than 60 ohms.
4. The transmission line of claim 1, 2 or 3, wherein the first dielectric layer and the third dielectric layer are the same thickness.
5. The transmission line according to claim 1, 2 or 3,
the first metal signal line layer and the second metal signal line layer have the same thickness.
6. A duplexer comprising an antenna, and a transmission filter and a reception filter formed based on acoustic wave resonators,
further comprising an impedance transformer being the signal transmission line of any one of claims 1 to 5;
the head end of the first metal signal line layer of the signal transmission line is connected with an antenna, and the tail end of the second metal signal line layer is connected with the antenna end of a receiving filter or a transmitting filter.
7. The duplexer of claim 6,
the tail end of the second metal signal line layer is connected with the antenna end of the receiving filter;
the parallel branch of the transmitting filter and/or the receiving filter is provided with a coupling unit, and the coupling unit and the impedance transformer are electromagnetically coupled.
8. The duplexer as claimed in claim 7,
the coupling unit comprises a first inductor and a second inductor;
the first inductor is connected in parallel with the resonator on one parallel branch of the filter;
the first end of the second inductor is connected with the near-ground end of the resonator, and the second end of the second inductor is grounded.
9. The duplexer of claim 7 or 8,
the coupling unit comprises a first inductor and a second inductor;
the first ends of the first inductor and the second inductor are connected with the near-ground end of the parallel resonator;
the second end of the first inductor is suspended, and the second end of the second inductor is grounded;
a first series inductor is arranged between the output end of the transmitting filter and the signal transmitting end, and a first parasitic capacitor is formed between the first inductor of the coupling unit in the transmitting filter and the first series inductor;
a second series inductor is arranged between the output end of the receiving filter and the signal receiving end, and a second parasitic capacitor is formed between the first inductor and the second series inductor of the coupling unit in the receiving filter.
10. The duplexer of claim 7, wherein the impedance transformer and the coupling unit are both disposed in a package substrate of the duplexer.
11. The duplexer of claim 7,
the impedance converter is arranged in a packaging substrate of the duplexer;
the coupling unit is disposed on an upper surface of the package substrate.
12. The duplexer of claim 8 or 9,
the impedance converter is arranged in a packaging substrate of the duplexer;
one of the first inductor and the second inductor is disposed in the package substrate, and the other is disposed on the upper surface of the package substrate.
13. The duplexer of claim 7, wherein the impedance transformer and the coupling unit are disposed in a lower wafer of a receive filter of the duplexer.
14. The duplexer of claim 7,
the impedance converter is arranged in a lower wafer of a receiving filter of the duplexer;
the coupling units are all arranged on the upper surface of the packaging substrate of the duplexer.
15. A multiplexer, comprising the duplexer of any one of claims 6 to 14.
16. A communication device comprising the duplexer of any one of claims 6 to 14.
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