CN111627961A - Display panel and preparation method thereof - Google Patents
Display panel and preparation method thereof Download PDFInfo
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- CN111627961A CN111627961A CN202010423139.2A CN202010423139A CN111627961A CN 111627961 A CN111627961 A CN 111627961A CN 202010423139 A CN202010423139 A CN 202010423139A CN 111627961 A CN111627961 A CN 111627961A
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
Abstract
The application provides a display panel and a preparation method, the display panel comprises: the display device comprises a substrate and a plurality of display elements arranged on the substrate, wherein a vibration opening is formed in a region between every two adjacent display elements; a bottom electrode positioned between the substrate and the vibration opening; a top electrode located above the vibration opening, wherein under the combined action of the bottom electrode and the top electrode, air in the vibration opening vibrates to produce sound. Has the advantages that: this application sets up top electrode, bottom electrode and vibration opening through the region between display element to need not additionally to add the speaker to display panel and can make it possess the vocal function, not only make display panel frivolous, and because its vocal position is between adjacent display element, so reached the effect that sound and display frame match completely.
Description
Technical Field
The application relates to the technical field of display, in particular to a display panel and a preparation method thereof.
Background
In order to achieve a better viewing effect, a screen sound is the mainstream, in the display panel in the prior art, in a screen sound production mode, a speaker is usually additionally added in the display panel, that is, the speaker is arranged in an area outside an array substrate in the display panel to drive the screen of the display panel to vibrate, so that the display panel can sound; however, since the speaker is provided outside the array substrate, the display panel is thick.
In addition, the display panel of the prior art cannot accurately position each speaker to each pixel unit in the array substrate, and cannot sound the sound area corresponding to the speaker in combination with the display content, for example, when the display content is a bird, the sound area should be the display area corresponding to the beak of the bird, so that the visual and auditory effects of the viewer cannot achieve a completely matched viewing effect in space and time.
In summary, the display panel of the prior art has the problems of thick display panel and incomplete matching of sound and display picture.
Disclosure of Invention
The application provides a display panel and a preparation method thereof, which can effectively solve the problems that the display panel in the prior art is thick and a screen cannot accurately and uniformly sound.
The present application provides a display panel, the display panel includes:
a substrate;
the display elements are arranged on the substrate, and vibration openings are formed in the areas between the adjacent display elements;
a bottom electrode between the substrate and the vibration opening;
and the top electrode is positioned above the vibration opening, wherein under the combined action of the bottom electrode and the top electrode, the air in the vibration opening vibrates to generate sound.
In the display panel provided by the application, the display panel further includes an encapsulation layer, the encapsulation layer covers the plurality of display elements and the top electrode, and the vibration opening and the encapsulation layer enclose a closed vibration cavity.
In the display panel provided by the present application, the display panel further includes a light emitting layer disposed between the display element and the encapsulation layer;
wherein the light emitting layer includes a plurality of organic light emitting devices disposed on the display element.
In the display panel provided by the present application, the material of the top electrode and the bottom electrode comprises one or more combinations of aluminum molybdenum alloy, copper molybdenum alloy and indium tin oxide.
In the display panel provided by the application, the display elements comprise an interlayer dielectric layer, a passivation layer and thin film transistors embedded in the interlayer dielectric layer in a stacked mode, and the passivation layer between the adjacent thin film transistors is provided with the vibration openings.
In the display panel provided by the application, the depth of the vibration opening is the same as the thickness of the passivation layer.
The application also provides a preparation method of the display panel, which comprises the following steps:
providing a substrate;
forming a plurality of display elements and a plurality of bottom electrodes on the substrate, the bottom electrodes being disposed in regions between adjacent display elements;
sequentially forming a sacrificial layer and an electrode material layer in a region between adjacent display elements, and patterning the electrode material layer to form a top electrode;
and etching the display panel on which the electrode material layer is formed so as to strip the area of the display element corresponding to the sacrificial layer and form a vibration opening.
In the preparation method of the display panel provided by the present application, the plurality of display elements include an interlayer dielectric layer and a passivation layer which are stacked, and a thin film transistor embedded in the interlayer dielectric layer, the plurality of display elements and the plurality of bottom electrodes are formed on the substrate, and specifically include:
forming a plurality of grid electrodes of the thin film transistors on the substrate, and forming a corresponding bottom electrode on one side of each grid electrode, wherein the grid electrodes and the bottom electrodes are arranged on the same layer;
forming an interlayer dielectric layer on the display panel on which the bottom electrode and the gate electrode are formed;
and forming a passivation layer on the interlayer dielectric layer to form a plurality of display elements.
In the preparation method of the display panel provided by the present application, sequentially forming a sacrificial layer and an electrode material layer in a region between adjacent display elements, and patterning the electrode material layer to form a top electrode, specifically includes:
forming the sacrificial layer in a region between adjacent display elements;
forming the electrode material layer on a region of the display element corresponding to the sacrificial layer;
forming photoresist on the electrode material layer, wherein the photoresist is patterned;
and photoetching the electrode material layer with the photoresist to strip the electrode material layer corresponding to the photoresist to form a top electrode.
In the method for manufacturing a display panel provided by the present application, after forming the vibration opening, the method further includes:
forming a light emitting layer on the display panel on which the vibration opening is formed, the light emitting layer including a plurality of organic light emitting devices disposed on the display element;
and evaporating a thin film packaging layer on the display panel with the luminescent layer.
Has the advantages that: this application sets up top electrode, bottom electrode and vibration opening through the region between display element to need not additionally to add the speaker to display panel and can make it possess the vocal function, not only make display panel frivolous, and because its vocal position is between adjacent display element, so reached the effect that sound and display frame match completely.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present application.
Fig. 2 is a schematic flow chart of a manufacturing method of a display panel provided in an embodiment of the present application.
Fig. 3 is a schematic flowchart of step S20 provided in the embodiment of the present application.
Fig. 4 is a schematic flowchart of step S30 provided in the embodiment of the present application.
Fig. 5 is another schematic flow chart of a manufacturing method of a display panel according to an embodiment of the present disclosure.
Fig. 6a to 6j are schematic views of process flow structures of a display panel provided in an embodiment of the present application.
Detailed Description
In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing and simplifying the description, and are not intended to indicate or imply that the device or element being referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus should not be considered as limiting the invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
The present application is more particularly described in the following paragraphs by way of example with reference to the accompanying drawings. Advantages and features of the present application will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present application.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a display panel provided in an embodiment of the present application, in fig. 1, the display panel includes:
a substrate 1;
a plurality of display elements 2 disposed on the substrate 1, and a vibration opening 3 is formed in a region between adjacent display elements 2;
a bottom electrode 4 located between the substrate 1 and the vibration opening 3;
and the top electrode 5 is positioned above the vibration opening 3, wherein under the combined action of the bottom electrode 4 and the top electrode 5, the air in the vibration opening 3 vibrates to generate sound.
The substrate 1 may be an organic solid, an inorganic solid, or a combination of an organic solid and an inorganic solid. The substrate 11 may be rigid or flexible and may be processed as discrete individual components (e.g., sheets or wafers) or as a continuous roll. Typical substrate materials include glass, plastic, metal, ceramic, semiconductor, metal oxide, metal nitride, metal sulfide, oxide semiconductor, nitride semiconductor, sulfide semiconductor, carbon, or combinations of these materials, or any other material commonly used to form OLED devices, which may be passive matrix devices or active matrix devices. The substrate 11 may be a homogeneous mixture of materials, a composite of materials, or a multi-layer material. The substrate 11 may be an OLED substrate, i.e. a substrate commonly used for the fabrication of OLED devices, such as an active matrix low temperature polysilicon or amorphous silicon Thin Film Transistor (TFT) substrate.
Further, when the substrate is a flexible substrate, the material of the substrate includes Polyimide (PI), Polycarbonate (PC), cyclic olefin copolymer, Acrylic resin (acryl), and acetylated cellulose.
In some embodiments, the display panel further comprises an encapsulation layer (not shown), the encapsulation layer covers the plurality of display elements 2 and the top electrode 5, and the vibration opening 3 and the encapsulation layer enclose a closed vibration cavity. Further, in the process flow corresponding to the display panel, the top electrode 5 is attached to the encapsulation layer, so that the vibration opening 3 is closed to form a closed vibration cavity, and it is further ensured that a certain volume of air exists in the vibration cavity, so that the top electrode 5 and the bottom electrode 4 act together, and the air in the vibration opening 3 is vibrated to generate sound. Note that the top electrode 5 has a vibrating function, and the bottom electrode 4 is fixed in the display element 2.
Further, the structure of the encapsulation layer mainly includes one or more combinations of a laminated Polyvinyl alcohol film (PVA), a cellulose triacetate film (TAC), a pressure sensitive adhesive film (PSA film), a Release film (Release film), and a Protective film (Protective film).
In some embodiments, referring to fig. 1, the display panel further includes a light emitting layer 7, the light emitting layer 7 is disposed between the display element 2 and the encapsulation layer; it should be noted that the light-emitting layer is composed of a plurality of organic light-emitting devices (not shown in the figure), that is, a corresponding one of the organic light-emitting devices is provided on each display element 2, and the organic light-emitting device is connected to the pixel electrode 6 in the passivation layer 22 in the display element 2 and to the source-drain electrode 231 of the thin film transistor.
The organic light Emitting device includes a Hole Injection Layer (HIL), a Hole Transport Layer (HTL), an organic light Emitting Layer (EML), an Electron Transport Layer (EHL), and an Electron Injection Layer (EIL) stacked in sequence. And a Cathode Layer (CL).
In some embodiments, the material of the top electrode 5 and the bottom electrode 4 includes one or more combinations of aluminum molybdenum alloy, copper molybdenum alloy, and Indium Tin Oxide (ITO). Further, the material may be Mo (molybdenum), Al (aluminum), Cu (copper), Ti (titanium), molybdenum alloy, aluminum alloy, copper alloy, or titanium alloy. For example, the top electrode 5 and the bottom electrode 4 may be made of the same material, both being aluminum-molybdenum alloy, or both being indium-tin oxide; alternatively, the top electrode 5 and the bottom electrode 4 may be made of different materials, wherein the top electrode 5 may be an aluminum molybdenum alloy and the bottom electrode 4 may be a copper molybdenum alloy. It should be noted that the top electrode 5 and the bottom electrode 4 are made of the same or different materials, do not affect the cooperation of the two electrode layers, and vibrate the air in the vibration opening 3 to generate vibration so as to make the display panel generate sound.
In some embodiments, the plurality of display elements 2 include an interlayer dielectric layer 21 and a passivation layer 22 stacked on each other, and thin film transistors 23 embedded in the interlayer dielectric layer 21, wherein the vibration openings 3 are formed on the passivation layer 22 between adjacent thin film transistors 23.
Further, the thin film transistor 23 corresponds to the display element 2 in one-to-one manner, and the thin film transistor 23 includes a gate electrode 232 disposed in the interlayer dielectric layer 21, and source and drain electrodes 231 disposed at two ends of the gate electrode 232, where the source and drain electrodes 231 and the gate electrode 232 perform electron transmission through the semiconductor Oxide layer 25, so as to make the display panel emit light, and the material of the semiconductor Oxide layer 25 may be one of Indium Gallium Zinc Oxide (IGZO), Indium Gallium Zinc Tin Oxide (Indium Gallium Zinc Oxide, IGZTO), Indium Zinc Tin Oxide (IZO) or Indium Tin Oxide (Indium Gallium Oxide, IGO).
Please refer to fig. 1, the display device 2 further includes a shielding layer 26 disposed above the substrate 1 and directly below the thin film transistor 23, the shielding layer 26 is separated from the thin film transistor 23 by a blocking layer 8, the shielding layer 26 is disposed corresponding to the thin film transistor 23, and the blocking layer 8 and the shielding layer 26 are made of one or more combinations of silicon oxide (SiOx) and silicon oxynitride (SiNx/SiOx).
The display element 2 further includes a gate insulating layer 24, the gate insulating layer 24 and the interlayer dielectric layer 21 may be made of different materials, and the gate insulating layer 24 may be made of Low temperature poly-silicon (LTPS) or silicon nitride (SiNx). For the liquid crystal display, the thin film circuit can be made thinner and smaller and the power consumption is lower by adopting the polysilicon liquid crystal material.
In some embodiments, referring to fig. 1, the depth of the vibration opening 3 is the same as the thickness of the passivation 22, that is, the vibration opening 3 exposes the interlayer dielectric layer 21, so that the interlayer dielectric layer 21 serves as the bottom of the vibration opening 3, so that the vibration opening 3 is large enough to allow enough air to be contained in the vibration opening 3, and thus, when the top electrode 5 and the bottom electrode 4 work together, more air is vibrated, and the sound volume of the display panel is large.
The plurality of display elements 2 form an active matrix array of the display panel, so that the substrate 1 and the plurality of display elements 2 form an active matrix substrate of the display panel.
For more clearly describing the display panel provided by the present application, the present application also provides a method for manufacturing the display panel, please refer to fig. 2, where fig. 2 is a schematic flow chart of the method for manufacturing the display panel provided by the embodiment of the present application. In this fig. 2, the preparation method includes:
s10, providing a substrate;
the substrate 1 may be an organic solid, an inorganic solid, or a combination of an organic solid and an inorganic solid. The substrate 11 may be rigid or flexible and may be processed as discrete individual components (e.g., sheets or wafers) or as a continuous roll. Typical substrate materials include glass, plastic, metal, ceramic, semiconductor, metal oxide, metal nitride, metal sulfide, oxide semiconductor, nitride semiconductor, sulfide semiconductor, carbon, or combinations of these materials, or any other material commonly used to form OLED devices, which may be passive matrix devices or active matrix devices. The substrate 11 may be a homogeneous mixture of materials, a composite of materials, or a multi-layer material. The substrate 11 may be an OLED substrate, i.e., a substrate commonly used for fabricating OLED devices, such as an active matrix low temperature polysilicon or amorphous silicon Thin Film Transistor (TFT) substrate.
S20, forming a plurality of display elements and a plurality of bottom electrodes on the substrate, wherein the bottom electrodes are arranged in the area between the adjacent display elements.
Specifically, referring to fig. 3, fig. 3 is a schematic flow chart of step S20 in the method for manufacturing a display panel according to the embodiment of the present application, in which a plurality of display elements include an interlayer dielectric layer and a passivation layer that are stacked, and a thin film transistor embedded in the interlayer dielectric layer, and the step S20 specifically includes:
s201, forming a plurality of grids of thin film transistors on the substrate, and forming corresponding bottom electrodes on one side of each grid, wherein the grids and the bottom electrodes are arranged on the same layer;
s203, forming an interlayer dielectric layer on the display panel on which the bottom electrode and the grid electrode are formed;
and S204, forming a passivation layer on the interlayer medium layer to form a plurality of display elements.
And S30, sequentially forming a sacrificial layer and an electrode material layer in the area between the adjacent display elements, and patterning the electrode material layer to form a top electrode.
Specifically, referring to fig. 4, fig. 4 is a schematic flowchart illustrating a step S30 in the method for manufacturing a display panel according to the embodiment of the present application, where the step S30 specifically includes:
s301, forming the sacrificial layer in the area between the adjacent display elements;
s302, forming the electrode material layer in the area of the display element corresponding to the sacrificial layer;
s303, forming photoresist on the electrode material layer, wherein the photoresist is patterned.
S304, photoetching is carried out on the electrode material layer formed with the photoresist so as to strip the electrode material layer corresponding to the photoresist and form a top electrode.
And S40, etching the display panel with the electrode material layer, and stripping the area of the display element corresponding to the sacrificial layer to form a vibration opening.
Specifically, referring to fig. 5, fig. 5 is another schematic flow chart of the method for manufacturing a display panel according to the embodiment of the present application, and after the step S40, the method further includes:
s50, forming a light emitting layer on the display panel with the vibration opening, wherein the light emitting layer comprises a plurality of organic light emitting devices, and the organic light emitting devices are arranged on the display element;
and S60, evaporating and plating a thin film packaging layer on the display panel with the light emitting layer.
In some embodiments, please refer to fig. 6a to 6j for more clearly describing the process flow of the method for manufacturing the display panel provided in the embodiments of the present application, and fig. 6a to 6j are schematic views of the process flow structure of the display panel provided in the embodiments of the present application.
Take the fabrication of a top gate oxide thin film transistor type display panel as an example:
as shown in fig. 6a, a substrate 1 is provided, and a barrier layer 26 of the top gate oxide thin film transistor is formed on the substrate 1.
As shown in fig. 6b, a barrier layer 8 is deposited on the substrate 1 deposited with the shielding layer 26, and the material of the barrier layer 8 includes one or more combinations of silicon oxide (SiOx) and silicon oxynitride (SiNx/SiOx).
As shown in fig. 6c, a semiconductor Oxide layer 25 is deposited on the barrier layer 8, and the material of the semiconductor Oxide layer 25 may be Indium Gallium Zinc Oxide (IGZO), Indium Gallium Zinc Tin Oxide (IGZTO), Indium Zinc Tin Oxide (IZO) or Indium Tin Oxide (IGO).
As shown in fig. 6d, a gate insulating layer 24 and a gate electrode 232 are formed on the semiconductor Oxide layer 25, and a bottom electrode 4 is formed on the gate insulating layer 24 at a side away from the gate electrode 24, wherein the material of the bottom electrode 4 includes one or more combinations of aluminum molybdenum alloy, copper molybdenum alloy and Indium Tin Oxide (ITO). Further, the material may be Mo (molybdenum), Al (aluminum), Cu (copper), Ti (titanium), molybdenum alloy, aluminum alloy, copper alloy, or titanium alloy.
As shown in fig. 6e, an interlayer dielectric layer 21 is formed on the display panel on which the gate insulating layer 24 and the gate 232 are formed, and an opening is formed in the interlayer dielectric layer 21, and the interlayer dielectric layer 21 covers the gate insulating layer 24 and the gate 232 to reserve the position of the source/drain 231 of the thin film transistor 23, thereby completing the patterning of the thin film transistor 23.
As shown in fig. 6f, a passivation layer 3 is deposited on the display panel deposited with the interlayer dielectric layer 21, a sacrificial layer (not shown) is deposited between the adjacent thin film transistors 23, and a pixel electrode layer 6 is formed at a position corresponding to the sacrificial layer, wherein the pixel electrode layer 6 includes one or more combinations of aluminum molybdenum alloy, copper molybdenum alloy, and Indium Tin Oxide (ITO). Further, the material may be Mo (molybdenum), Al (aluminum), Cu (copper), Ti (titanium), molybdenum alloy, aluminum alloy, copper alloy, or titanium alloy.
As shown in fig. 6g, the electrode material layer 5 is formed on the side where the pixel electrode layer 6 is formed.
As shown in fig. 6h, the electrode material layer 5 is coated with a photoresist 9, and the display panel coated with the photoresist 9 is subjected to photolithography to pattern the electrode material layer 5, and the display panel formed with the electrode material layer 5 is subjected to patterning to form a top electrode.
As shown in fig. 6i, the region adjacent to the thin film transistor 23 is etched to remove the sacrificial layer, or a dry etching or wet etching machine may be used to remove the portion of the passivation layer 22 corresponding to the sacrificial layer, so as to form the vibration cavity 3.
As shown in fig. 6j, a light emitting layer 7 including an organic light emitting device disposed over the thin film transistor 23 is formed on the display panel on which the top electrode is formed;
a thin film encapsulation layer (not shown) is vapor-deposited on the display panel on which the light emitting layer is formed.
Has the advantages that: this application sets up top electrode, bottom electrode and vibration opening through the region between display element to need not additionally to add the speaker to display panel and can make it possess the vocal function, not only make display panel frivolous, and because its vocal position is between adjacent display element, so reached the effect that sound and display frame match completely.
In this embodiment, the display panel and the method for manufacturing the same may be applied to the development of Thin Film Transistors (TFTs) of Organic Light-Emitting Diodes (OLEDs), the development of TFTs of Quantum Dot Light Emitting Diodes (QLEDs), or the development of TFTs of micro Diodes.
Based on the same application concept, an embodiment of the present invention provides an electronic device, including: any embodiment of the invention provides a display panel. The electronic device may be: any product or component with a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator and the like.
In this embodiment, the display panel and the method for manufacturing the same may be applied to the development of Thin Film Transistors (TFTs) of Organic Light-Emitting Diodes (OLEDs), the development of TFTs of Quantum Dot Light Emitting Diodes (QLEDs), or the development of TFTs of micro Diodes.
In addition to the Display panel provided in the above application embodiment, the Display device provided in the application embodiment may be a Liquid Crystal Display (LCD) Display, and may also be an electronic ink screen (e-ink) Display. Active Matrix Organic Light Emitting Diode (AMOLED) displays have the advantages of ultra-high response speed, wide color gamut, high contrast, etc., and have been considered as next generation displays following liquid crystal. And AMOLEDs can be fabricated on Flexible substrates (Flexible substrates) so that the display has the characteristics of being Bendable (Bendable and Foldable). Flexible displays bring more applications and functionality to the display.
In addition to the above embodiments, other embodiments are also possible. All technical solutions formed by using equivalents or equivalent substitutions fall within the protection scope of the claims of the present application.
In summary, although the present application has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present application, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present application, so that the scope of the present application shall be determined by the appended claims.
Claims (10)
1. A display panel, comprising:
a substrate;
the display elements are arranged on the substrate, and vibration openings are formed in the areas between the adjacent display elements;
a bottom electrode between the substrate and the vibration opening;
and the top electrode is positioned above the vibration opening, wherein under the combined action of the bottom electrode and the top electrode, the air in the vibration opening vibrates to generate sound.
2. The display panel of claim 1, further comprising an encapsulation layer covering the plurality of display elements and the top electrode, wherein the vibration opening and the encapsulation layer enclose a closed vibration cavity.
3. The display panel according to claim 2, further comprising a light-emitting layer provided between the display element and the encapsulation layer;
wherein the light emitting layer includes a plurality of organic light emitting devices disposed on the display element.
4. The display panel of claim 1, wherein the material of the top and bottom electrodes comprises one or more combinations of aluminum molybdenum alloy, copper molybdenum alloy, and indium tin oxide.
5. The display panel according to claim 1, wherein the plurality of display elements include an interlayer dielectric layer and a passivation layer stacked on each other, and thin film transistors embedded in the interlayer dielectric layer, and the vibration openings are formed in the passivation layer between adjacent thin film transistors.
6. The display panel according to claim 5, wherein a depth of the vibration opening is the same as a thickness of the passivation layer.
7. A method for manufacturing a display panel, the method comprising:
providing a substrate;
forming a plurality of display elements and a plurality of bottom electrodes on the substrate, the bottom electrodes being disposed in regions between adjacent display elements;
sequentially forming a sacrificial layer and an electrode material layer in a region between adjacent display elements, and patterning the electrode material layer to form a top electrode;
and etching the display panel on which the electrode material layer is formed so as to strip the area of the display element corresponding to the sacrificial layer and form a vibration opening.
8. The method according to claim 7, wherein the plurality of display elements include an interlayer dielectric layer and a passivation layer stacked on each other and a thin film transistor embedded in the interlayer dielectric layer, and the forming of the plurality of display elements and the plurality of bottom electrodes on the substrate includes:
forming a plurality of grid electrodes of the thin film transistors on the substrate, and forming a corresponding bottom electrode on one side of each grid electrode, wherein the grid electrodes and the bottom electrodes are arranged on the same layer;
forming an interlayer dielectric layer on the display panel on which the bottom electrode and the gate electrode are formed;
and forming a passivation layer on the interlayer dielectric layer to form a plurality of display elements.
9. The method according to claim 7, wherein the sequentially forming a sacrificial layer and an electrode material layer in a region between adjacent display elements, and patterning the electrode material layer to form a top electrode comprises:
forming a sacrificial layer in a region between adjacent display elements;
forming an electrode material layer on the sacrificial layer;
forming photoresist on the electrode material layer, wherein the photoresist is patterned;
and photoetching the electrode material layer with the photoresist to strip the electrode material layer corresponding to the photoresist to form a top electrode.
10. The method of manufacturing according to claim 8, further comprising, after forming the vibration opening:
forming a light emitting layer on the display panel on which the vibration opening is formed, the light emitting layer including a plurality of organic light emitting devices disposed on the display element;
and evaporating a thin film packaging layer on the display panel with the luminescent layer.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112087541A (en) * | 2020-09-07 | 2020-12-15 | 武汉华星光电半导体显示技术有限公司 | Display module and preparation method thereof |
| CN114724459A (en) * | 2022-03-10 | 2022-07-08 | 武汉华星光电技术有限公司 | Display substrate and display panel |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080048182A1 (en) * | 2006-08-25 | 2008-02-28 | Mutsuko Hatano | Display with integral speaker element |
| CN105070720A (en) * | 2015-07-13 | 2015-11-18 | 京东方科技集团股份有限公司 | Display panel integrated with sensor, manufacturing method thereof and display device |
| CN106530968A (en) * | 2016-12-27 | 2017-03-22 | 京东方科技集团股份有限公司 | Display device and method for controlling same |
| CN109068245A (en) * | 2018-08-01 | 2018-12-21 | 京东方科技集团股份有限公司 | Screen sounding device, singing display screen and its manufacturing method and screen sonification system |
| CN109873021A (en) * | 2019-03-20 | 2019-06-11 | 云谷（固安）科技有限公司 | The driving method of display panel, display device and display device |
| CN110168735A (en) * | 2019-03-27 | 2019-08-23 | 京东方科技集团股份有限公司 | Display base plate and its driving method and display device |
| CN110244823A (en) * | 2019-06-19 | 2019-09-17 | 京东方科技集团股份有限公司 | Display base plate and display device |
| CN110267182A (en) * | 2019-06-17 | 2019-09-20 | 武汉华星光电技术有限公司 | A kind of screen sounding display device |
| CN110534545A (en) * | 2018-05-24 | 2019-12-03 | 乐金显示有限公司 | Display device |
-
2020
- 2020-05-19 CN CN202010423139.2A patent/CN111627961B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080048182A1 (en) * | 2006-08-25 | 2008-02-28 | Mutsuko Hatano | Display with integral speaker element |
| CN105070720A (en) * | 2015-07-13 | 2015-11-18 | 京东方科技集团股份有限公司 | Display panel integrated with sensor, manufacturing method thereof and display device |
| CN106530968A (en) * | 2016-12-27 | 2017-03-22 | 京东方科技集团股份有限公司 | Display device and method for controlling same |
| CN110534545A (en) * | 2018-05-24 | 2019-12-03 | 乐金显示有限公司 | Display device |
| CN109068245A (en) * | 2018-08-01 | 2018-12-21 | 京东方科技集团股份有限公司 | Screen sounding device, singing display screen and its manufacturing method and screen sonification system |
| US20200171540A1 (en) * | 2018-08-01 | 2020-06-04 | Boe Technology Group Co., Ltd. | Ultrasonic generator, method of manufacturing the same, display panel and screen sound producing system |
| CN109873021A (en) * | 2019-03-20 | 2019-06-11 | 云谷（固安）科技有限公司 | The driving method of display panel, display device and display device |
| CN110168735A (en) * | 2019-03-27 | 2019-08-23 | 京东方科技集团股份有限公司 | Display base plate and its driving method and display device |
| CN110267182A (en) * | 2019-06-17 | 2019-09-20 | 武汉华星光电技术有限公司 | A kind of screen sounding display device |
| CN110244823A (en) * | 2019-06-19 | 2019-09-17 | 京东方科技集团股份有限公司 | Display base plate and display device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112087541A (en) * | 2020-09-07 | 2020-12-15 | 武汉华星光电半导体显示技术有限公司 | Display module and preparation method thereof |
| CN114724459A (en) * | 2022-03-10 | 2022-07-08 | 武汉华星光电技术有限公司 | Display substrate and display panel |
| CN114724459B (en) * | 2022-03-10 | 2024-04-19 | 武汉华星光电技术有限公司 | Display substrate and display panel |
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|---|---|
| CN111627961B (en) | 2023-11-28 |
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