CN111613863A - Stripline resonator structure and magnetic tuning trap composed of resonator structure - Google Patents
Stripline resonator structure and magnetic tuning trap composed of resonator structure Download PDFInfo
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- CN111613863A CN111613863A CN202010579534.XA CN202010579534A CN111613863A CN 111613863 A CN111613863 A CN 111613863A CN 202010579534 A CN202010579534 A CN 202010579534A CN 111613863 A CN111613863 A CN 111613863A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/08—Strip line resonators
- H01P7/088—Tunable resonators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
- H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
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Abstract
The invention discloses a strip line resonator structure and a magnetic tuning wave trap composed of the same, belonging to the technical field of electronic components; the strip line resonator structure consists of a strip line central conductor, a strip line outer conductor, a gadolinium gallium garnet crystal and a YIG single crystal thin film, wherein the strip line central conductor, the YIG single crystal thin film and the gadolinium gallium garnet crystal are sequentially arranged in the strip line outer conductor; the invention realizes the resonator planarization of the magnetic tuning wave trap and simplifies the structural design of the strip line resonant circuit; the working frequency of the passband of the magnetic tuning wave trap is expanded by adopting a strip line transmission mode; a plurality of strip line resonant circuits can be arranged on the same plane, so that the integration of the multi-channel wave trap is facilitated; the resonance circuit adopts a plurality of single crystal film blocks to form resonator cascade, effectively inhibits a plurality of excitation modes of the single crystal film, increases the stop band depth of the wave trap and improves the performance of the wave trap.
Description
Technical Field
The invention relates to the technical field of electronic components, in particular to a stripline resonator structure and a magnetic tuning wave trap composed of the resonator structure.
Background
The YIG (yttrium iron garnet) band-stop filter is mainly applied to electronic warfare systems as a broadband magnetic tuning device, and is an essential important component no matter electronic reconnaissance, electronic attack and electronic defense. The YIG band elimination filter has a broadband tuning characteristic, filters or inhibits unnecessary interference signals in an Electronic Support (ESM) system and an Electronic Countermeasure (ECM) system, ensures the normal work of the system, and is widely applied to an electronic information system and a microwave receiving front end. The application platform comprises an airborne broadband receiver, an electronic interference unit and a communication system; ground, ship-based radar; missile electronic system.
The prior YIG wave trap adopts a ring-ball coupling resonance structure, which is shown in figure 1, and generally comprises a plurality of YIG pellets 3, a multi-stage resonance coupling ring 2 and a resonance cavity. The structure is complex, the assembly process is various, the production period is long, and the debugging difficulty is large. The resonator of the YIG wave trap with the global coupling resonance structure is large in size and is influenced by the ball inlet direction of the YIG small balls and the debugging process, so that multi-channel and array integration is difficult to realize. And due to the limitation of coupling loop inductance and distributed capacitance, the straight-through frequency of the YIG trap of the existing ring-and-ball coupling resonant structure is generally lower than 20 GHz.
As mentioned above, most of the current magnetic tuning traps adopt YIG single crystal balls as resonators, adopt a ring-ball coupling structure, and realize a trap function in a magnetic field by a ferromagnetic resonance principle. Generally, the YIG magnetic tuning trap comprises an electromagnet structure and a resonator structure, wherein the electromagnet structure consists of a soft magnetic alloy material with high magnetic conductivity and an excitation coil 6, the soft magnetic alloy material is magnetized under the action of a magnetic field generated by a magnetic circuit coil, a continuously adjustable strong magnetic field is generated at an air gap of an upper magnetic circuit 5 and a lower magnetic circuit 5, and the resonator is arranged at the air gap of the upper magnetic circuit and the lower magnetic circuit. The YIG single crystal small ball 3, the coupling ring 2 and the resonant cavity 1 jointly form a resonator of the magnetic tuning wave trap. Under the action of a magnetic field, the YIG single crystal small balls can generate ferromagnetic resonance, when microwave signals are coupled in through the coupling ring 2 and have the same frequency with the ferromagnetic resonance frequency of the YIG single crystal small balls 3, resonance can be generated, and a trapped wave frequency point is formed; the trap frequency can be changed by changing the magnitude of the magnetic field;
the global coupling resonance structure is generally composed of a YIG single crystal small ball 3, a coupling ring 2 and a resonant cavity 1; the YIG single crystal small ball 3 is bonded on the support rod 4, the YIG single crystal small ball 3 is arranged at the center of the coupling ring 2 through the support rod 4, the direction of the YIG single crystal small ball 3 can be adjusted by rotating the support rod 4, the YIG single crystal small ball 3 and the coupling ring 2 are arranged at the center of the resonant cavity 1, and the direction of an external magnetic field needs to be vertical to the coupling ring 2, as shown in figure 2.
The magnetic tuning trap of the existing ring-and-ball coupling resonance structure adopts YIG single crystal ball 3 and coupling ring 2 to jointly form a resonator, the structure is three-dimensional coupling, the assembly is complex, the debugging difficulty is high, and the passband direct frequency is lower than 20 GHz; because the magnetic field direction is vertical to the position of the small ball supporting rod 4, and the small ball supporting rod 4 needs to be rotated to adjust the position of the YIG single crystal small ball 3 during debugging, the YIG wave trap adopting the ring-and-ball coupling resonance structure is difficult to realize multi-channel integration in the same magnetic circuit structure.
Disclosure of Invention
It is an object of the present invention to provide a stripline resonator structure to solve the above problems.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows: a stripline resonator structure is composed of a stripline central conductor, a stripline outer conductor, gadolinium gallium garnet crystals and a YIG single crystal thin film, wherein the YIG single crystal thin film and the gadolinium gallium garnet crystals are arranged in the stripline between the inner conductor and the outer conductor in sequence along the stripline central conductor.
As a preferred technical scheme: the YIG single crystal film is blocky, the saturation magnetization of the YIG single crystal film is 1000-1750 Gs, and the resonance line width is 0.3-O.6OeThe thickness of the film is 10 to 20 μm.
As a further preferable technical scheme: the saturation magnetization of the YIG single crystal film is 1750Gs, and the resonance line width is 0.5O e.
The trap resonance circuit adopts a strip line transmission mode, and uses a YIG single crystal film as a resonator; one end of the strip line is a radio frequency input, the other end of the strip line is a radio frequency output, and the length of the strip line is designed according to the performance of the wave trap.
The second purpose of the present invention is to provide a magnetically tuned trap composed of the above stripline resonator structure, which comprises an upper magnetic circuit and a lower magnetic circuit, wherein an air gap is arranged between the upper magnetic circuit and the lower magnetic circuit, the stripline resonator structure is arranged at the air gap, and an excitation coil is arranged in the lower magnetic circuit.
Compared with the prior art, the invention has the advantages that: the strip line and the single crystal film are adopted to jointly form the resonance circuit structure of the novel magnetic tuning wave trap, so that the planarization of the resonator of the magnetic tuning wave trap is realized, and the structural design of the resonance circuit of the magnetic tuning wave trap is simplified; a strip line transmission mode is adopted, the through frequency is as high as 40GH, and the passband working frequency of the magnetic tuning wave trap is expanded; a plurality of strip line resonant circuits can be arranged on the same plane, and the integration design of the multi-channel magnetic tuning wave trap is realized in the same magnetic circuit structure, so that the integration of the multi-channel wave trap is easy; the resonance circuit adopts a plurality of single crystal film blocks to form resonator cascade, effectively inhibits a plurality of excitation modes of the single crystal film, increases the stop band depth of the wave trap and improves the performance of the wave trap.
Drawings
FIG. 1 is a diagram of a prior art structure of a spherical-annular coupled resonant circuit of a YIG trap;
FIG. 2 is a structural diagram of a YIG trap of a conventional ring-and-ball coupled resonant structure;
FIG. 3 is a cross-sectional structural view of a stripline-fed YIG single crystal thin film resonator of the present invention;
FIG. 4 is a view of the structure of the pot-shaped magnetic circuit of the present invention;
FIG. 5 is a schematic view of a YIG single crystal thin film bulk according to the present invention;
FIG. 6 is a structure diagram of a stripline resonant circuit of the single crystal thin film trap of the present invention;
figure 7 is a cross-sectional view of a stripline resonant circuit of the single crystal thin film trap of the present invention;
figure 8 is a block diagram of a magnetically tuned trap in accordance with the present invention.
In the figure: 1. a resonant cavity; 2. a coupling ring; 3. YIG single crystal beads; 4. a support bar; 5. a magnetic circuit; 6. a field coil; 7. a coaxial cable; 8. a stripline center conductor; 9. YIG single crystal film; 10. gadolinium gallium garnet crystals; 11. a stripline outer conductor; 12. a lower magnetic circuit; 13. an upper magnetic circuit; 14. an SMA connector; 15. a stripline resonant circuit; 16. a set screw; 17. and a magnetic circuit air gap.
Detailed Description
The invention will be further explained with reference to the drawings.
Example 1:
a stripline resonator structure consisting of a stripline central conductor 8, a stripline outer conductor 11, a gadolinium gallium garnet crystal 10 and a YIG single crystal thin film 9, wherein the stripline central conductor 8, the YIG single crystal thin film 9 and the gadolinium gallium garnet crystal 10 are sequentially arranged in the stripline outer conductor 11; that is, the YIG single crystal thin film 9 is disposed on the strip line central conductor 8, and the end face structure thereof is shown in FIG. 3;
the YIG single crystal film 9 and the strip line jointly form a resonator structure, the whole resonator structure is placed in a uniform magnetic field, an adjustable electromagnet is adopted to provide the uniform magnetic field, and the electromagnet can be designed by adopting a pot-shaped magnetic circuit structure, as shown in figure 4;
a continuously adjustable uniform magnetic field is generated at the air gaps of the upper and lower magnetic poles of the pot-shaped magnetic circuit, and the resonator structure shown in fig. 3 is arranged at the air gaps of the upper and lower magnetic poles (i.e. the upper magnetic circuit 13 and the lower magnetic circuit 12); when microwave signals pass through the strip line and the magnetic circuit excitation coil 6 has no current, the resonator circuit is in a through state, and the through frequency of the resonator circuit is higher than 40 GHz; when current passes through the exciting coil 6, a uniform magnetic field is generated at the air gaps of the upper and lower magnetic poles, and the direction of the magnetic field is vertical to the surface of the YIG single crystal film 9; the YIG single crystal film 9 generates ferromagnetic resonance, and generates resonance when the resonance frequency is the same as the frequency of the electromagnetic wave passing through the strip line, so that the energy of the electromagnetic wave is absorbed to form a trapped wave stop band, and the resonance frequency is related to factors such as the intensity of an external magnetic field, the saturation magnetization of the single crystal film and the like. The external magnetic field intensity is linearly related to the resonant frequency, and the resonant frequency can be changed by changing the external magnetic field intensity, so that the magnetic tuning trap with continuously adjustable broadband is realized.
The specific implementation method comprises the following steps:
(1) a YIG single crystal film 9 is prepared by adopting a liquid phase epitaxy method, a layer of YIG single crystal film 9 is grown on the surface of a substrate by adopting a gadolinium gallium garnet crystal 10 as the substrate and adopting the liquid phase epitaxy method, in the embodiment, the saturation magnetization of the YIG single crystal film is 1750Gs, the resonance line width is 0.5Oe, and the film thickness is 10-20 microns; by cutting, the YIG single crystal thin film was cut into rectangular small pieces (2 mm. times.1 mm) as shown in FIG. 5;
(2) designing a strip line resonator: selecting a high-dielectric-constant dielectric substrate to prepare a strip line, wherein in the embodiment, the dielectric constant of the dielectric substrate is 9.8, the thickness of the dielectric substrate is 0.6mm, the characteristic impedance of the strip line is calculated according to 50 ohms, and the line width of a central conductor of the strip line is calculated according to the parameters of the dielectric substrate; the manufactured strip line is characterized in that a dielectric substrate is dug out at intervals along the central conductor to expose the central conductor 8 of the strip line, the size of a cavity of the dug-out dielectric substrate can be determined according to the technical indexes of the working frequency, the stop band depth and the like of the designed wave trap, the number of the cavities is determined according to the technical indexes, such as the working frequency, the stop band depth and the like of the designed wave trap, the deeper the stop band depth is, the more the number of the cavities is, the more the single crystal thin film blocks are filled in, and the more the;
the working frequency of the device is 10-12 GHz, and the stop band depth is greater than 30 dB; designing the number of the resonance stages to be 5 stages as shown in fig. 6; as shown in fig. 7, which is a cross-sectional view along the center conductor, it can be seen that a plurality of single crystal thin film resonators form a cascade structure along the strip line center conductor 8 direction;
(3) designing a magnetic field required by the operation of the resonant circuit: the magnetic circuit and the excitation coil are made of iron-nickel alloy materials with high magnetic conductivity and enameled wire coils, the pot-shaped magnetic circuit structure design is adopted, the pot-shaped magnetic circuit structure design is divided into an upper magnetic circuit 13 and a lower magnetic circuit 12, the area of a uniform magnetic field at a magnetic circuit air gap 17 of the upper and lower magnetic circuits is larger than that of a resonant circuit, the resonant circuit is arranged at the magnetic circuit air gap 17, and the direction of the magnetic field is vertical to the surface of a strip line resonator;
the external dimension of the magnetic circuit designed by the embodiment is 45mm multiplied by 25mm, the magnetic circuit material adopts iron-nickel alloy with the trade mark of 1J 50; the air gap of a magnetic circuit is 1.3mm, enameled wires with the diameter of 0.31mm are used for manufacturing a magnetic circuit excitation coil, and the number of turns of the coil is 900-1100;
(4) assembling the strip line resonant circuit 15, the tuned magnetic circuit and the SMA connector 14, wherein the specific assembling structure is that two ends of the upper and lower magnetic circuits are connected with the SMA connector 14 by adopting fixing screws 16 to form a magnetic tuned wave trap by combination, and the structure of the magnetic tuned wave trap is shown in figure 8.
Example 2: a stripline resonator structure consisting of a stripline central conductor 8, a stripline outer conductor 11, a gadolinium gallium garnet crystal 10 and a YIG single crystal thin film 9, wherein the stripline central conductor 8, the YIG single crystal thin film 9 and the gadolinium gallium garnet crystal 10 are sequentially arranged in the stripline outer conductor 11; that is, the YIG single crystal thin film 9 is disposed on the strip line central conductor 8, and the end face structure thereof is shown in FIG. 3;
the YIG single crystal film 9 and the strip line jointly form a resonator structure, the whole resonator structure is placed in a uniform magnetic field, an adjustable electromagnet is adopted to provide the uniform magnetic field, and the electromagnet can be designed by adopting a pot-shaped magnetic circuit structure, as shown in figure 4;
a continuously adjustable uniform magnetic field is generated at the air gaps of the upper and lower magnetic poles of the pot-shaped magnetic circuit, and the resonator structure shown in fig. 3 is arranged at the air gaps of the upper and lower magnetic poles (i.e. the upper magnetic circuit 13 and the lower magnetic circuit 12); when microwave signals pass through the strip line and the magnetic circuit excitation coil 6 has no current, the resonator circuit is in a through state, and the through frequency of the resonator circuit is higher than 40 GHz; when current passes through the exciting coil 6, a uniform magnetic field is generated at the air gaps of the upper and lower magnetic poles, and the direction of the magnetic field is vertical to the surface of the YIG single crystal film 9; the YIG single crystal film 9 generates ferromagnetic resonance, and generates resonance when the resonance frequency is the same as the frequency of the electromagnetic wave passing through the strip line, so that the energy of the electromagnetic wave is absorbed to form a trapped wave stop band, and the resonance frequency is related to factors such as the intensity of an external magnetic field, the saturation magnetization of the single crystal film and the like. The external magnetic field intensity is linearly related to the resonant frequency, and the resonant frequency can be changed by changing the external magnetic field intensity, so that the magnetic tuning trap with continuously adjustable broadband is realized.
The specific implementation method comprises the following steps:
(1) adopting a liquid phase epitaxy method to prepare a YIG single crystal film 9, taking a gadolinium gallium garnet crystal 10 as a substrate, and growing a layer of YIG single crystal film 9 on the surface of the substrate by the liquid phase epitaxy method, wherein in the embodiment, the saturation magnetization of the YIG single crystal film is 1000Gs, the resonance line width is 0.4Oe, and the film thickness is 10-20 microns; by cutting, the YIG single crystal thin film was cut into rectangular small pieces (3 mm. times.1 mm) as shown in FIG. 5;
(2) designing a strip line resonator: selecting a high-dielectric-constant dielectric substrate to prepare a strip line, wherein in the embodiment, the dielectric constant of the dielectric substrate is 9.8, the thickness of the dielectric substrate is 0.6mm, the characteristic impedance of the strip line is calculated according to 50 ohms, and the line width of a central conductor of the strip line is calculated according to the parameters of the dielectric substrate; the manufactured strip line is characterized in that a dielectric substrate is dug out at intervals along the central conductor to expose the central conductor 8 of the strip line, the size of a cavity of the dug-out dielectric substrate can be determined according to the technical indexes of the working frequency, the stop band depth and the like of the designed wave trap, the number of the cavities is determined according to the technical indexes, such as the working frequency, the stop band depth and the like of the designed wave trap, the deeper the stop band depth is, the more the number of the cavities is, the more the single crystal thin film blocks are filled in, and the more the;
the working frequency of the device is 6-8 GHz, and the stop band depth is greater than 30 dB; designing the number of the resonance stages to be 5 stages as shown in fig. 6; as shown in fig. 7, which is a cross-sectional view along the center conductor, it can be seen that a plurality of single crystal thin film resonators form a cascade structure along the strip line center conductor 8 direction;
(3) designing a magnetic field required by the operation of the resonant circuit: the magnetic circuit and the excitation coil are made of iron-nickel alloy materials with high magnetic conductivity and enameled wire coils, the pot-shaped magnetic circuit structure design is adopted, the pot-shaped magnetic circuit structure design is divided into an upper magnetic circuit 13 and a lower magnetic circuit 12, the area of a uniform magnetic field at a magnetic circuit air gap 17 of the upper and lower magnetic circuits is larger than that of a resonant circuit, the resonant circuit is arranged at the magnetic circuit air gap 17, and the direction of the magnetic field is vertical to the surface of a strip line resonator;
the external dimension of the magnetic circuit designed by the embodiment is 45mm multiplied by 25mm, the magnetic circuit material adopts iron-nickel alloy with the trade mark of 1J 50; the air gap of a magnetic circuit is 1.3mm, enameled wires with the diameter of 0.31mm are used for manufacturing a magnetic circuit excitation coil, and the number of turns of the coil is 900-1100;
(4) assembling the strip line resonant circuit 15, the tuned magnetic circuit and the SMA connector 14, wherein the specific assembling structure is that two ends of the upper and lower magnetic circuits are connected with the SMA connector 14 by adopting fixing screws 16 to form a magnetic tuned wave trap by combination, and the structure of the magnetic tuned wave trap is shown in figure 8.
Example 3:
a stripline resonator structure consisting of a stripline central conductor 8, a stripline outer conductor 11, a gadolinium gallium garnet crystal 10 and a YIG single crystal thin film 9, wherein the stripline central conductor 8, the YIG single crystal thin film 9 and the gadolinium gallium garnet crystal 10 are sequentially arranged in the stripline outer conductor 11; that is, the YIG single crystal thin film 9 is disposed on the strip line central conductor 8, and the end face structure thereof is shown in FIG. 3;
the YIG single crystal film 9 and the strip line jointly form a resonator structure, the whole resonator structure is placed in a uniform magnetic field, an adjustable electromagnet is adopted to provide the uniform magnetic field, and the electromagnet can be designed by adopting a pot-shaped magnetic circuit structure, as shown in figure 4;
a continuously adjustable uniform magnetic field is generated at the air gaps of the upper and lower magnetic poles of the pot-shaped magnetic circuit, and the resonator structure shown in fig. 3 is arranged at the air gaps of the upper and lower magnetic poles (i.e. the upper magnetic circuit 13 and the lower magnetic circuit 12); when microwave signals pass through the strip line and the magnetic circuit excitation coil 6 has no current, the resonator circuit is in a through state, and the through frequency of the resonator circuit is higher than 40 GHz; when current passes through the exciting coil 6, a uniform magnetic field is generated at the air gaps of the upper and lower magnetic poles, and the direction of the magnetic field is vertical to the surface of the YIG single crystal film 9; the YIG single crystal film 9 generates ferromagnetic resonance, and generates resonance when the resonance frequency is the same as the frequency of the electromagnetic wave passing through the strip line, so that the energy of the electromagnetic wave is absorbed to form a trapped wave stop band, and the resonance frequency is related to factors such as the intensity of an external magnetic field, the saturation magnetization of the single crystal film and the like. The external magnetic field intensity is linearly related to the resonant frequency, and the resonant frequency can be changed by changing the external magnetic field intensity, so that the magnetic tuning trap with continuously adjustable broadband is realized.
The specific implementation method comprises the following steps:
(1) adopting a liquid phase epitaxy method to prepare a YIG single crystal film 9, taking a gadolinium gallium garnet crystal 10 as a substrate, and growing a layer of YIG single crystal film 9 on the surface of the substrate by the liquid phase epitaxy method, wherein in the embodiment, the saturation magnetization of the YIG single crystal film is 1500Gs, the resonance line width is 0.4Oe, and the film thickness is 10-20 microns; by cutting, the YIG single crystal thin film was cut into rectangular small pieces (2 mm. times.1 mm) as shown in FIG. 5;
(2) designing a strip line resonator: selecting a high-dielectric-constant dielectric substrate to prepare a strip line, wherein in the embodiment, the dielectric constant of the dielectric substrate is 9.8, the thickness of the dielectric substrate is 0.6mm, the characteristic impedance of the strip line is calculated according to 50 ohms, and the line width of a central conductor of the strip line is calculated according to the parameters of the dielectric substrate; the manufactured strip line is characterized in that a dielectric substrate is dug out at intervals along the central conductor to expose the central conductor 8 of the strip line, the size of a cavity of the dug-out dielectric substrate can be determined according to the technical indexes of the working frequency, the stop band depth and the like of the designed wave trap, the number of the cavities is determined according to the technical indexes, such as the working frequency, the stop band depth and the like of the designed wave trap, the deeper the stop band depth is, the more the number of the cavities is, the more the single crystal thin film blocks are filled in, and the more the;
the working frequency of the device is 8-10 GHz, and the stop band depth is greater than 30 dB; designing the number of the resonance stages to be 5 stages as shown in fig. 6; as shown in fig. 7, which is a cross-sectional view along the center conductor, it can be seen that a plurality of single crystal thin film resonators form a cascade structure along the strip line center conductor 8 direction;
(3) designing a magnetic field required by the operation of the resonant circuit: the magnetic circuit and the excitation coil are made of iron-nickel alloy materials with high magnetic conductivity and enameled wire coils, the pot-shaped magnetic circuit structure design is adopted, the pot-shaped magnetic circuit structure design is divided into an upper magnetic circuit 13 and a lower magnetic circuit 12, the area of a uniform magnetic field at a magnetic circuit air gap 17 of the upper and lower magnetic circuits is larger than that of a resonant circuit, the resonant circuit is arranged at the magnetic circuit air gap 17, and the direction of the magnetic field is vertical to the surface of a strip line resonator;
the external dimension of the magnetic circuit designed by the embodiment is 45mm multiplied by 25mm, the magnetic circuit material adopts iron-nickel alloy with the trade mark of 1J 50; the air gap of a magnetic circuit is 1.3mm, enameled wires with the diameter of 0.31mm are used for manufacturing a magnetic circuit excitation coil, and the number of turns of the coil is 900-1100;
(4) assembling the strip line resonant circuit 15, the tuned magnetic circuit and the SMA connector 14, wherein the specific assembling structure is that two ends of the upper and lower magnetic circuits are connected with the SMA connector 14 by adopting fixing screws 16 to form a magnetic tuned wave trap by combination, and the structure of the magnetic tuned wave trap is shown in figure 8.
From the above embodiments, it can be seen that the single crystal thin film material of the present invention can achieve the depth and width indexes within the working frequency band when the saturation magnetization is 1000-1750 Gs, and the structures are basically the same.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (4)
1. A stripline resonator structure, characterized by: the gadolinium gallium garnet single crystal thin film is composed of a strip line central conductor, a strip line outer conductor, gadolinium gallium garnet crystals and a YIG single crystal thin film, wherein the YIG single crystal thin film and the gadolinium gallium garnet crystals are arranged in the strip line in sequence along the strip line central conductor between the inner conductor and the outer conductor.
2. A stripline resonator structure as recited in claim 1, wherein: the YIG single crystal film is blocky, the saturation magnetization of the YIG single crystal film is 1000-1750 Gs, and the resonance line width is 0.3-O.6OeThe thickness of the film is 10 to 20 μm.
3. A stripline resonator structure according to claim 2, wherein: the saturation magnetization of the YIG single crystal film is 1000-1750 Gs, and the resonance line width is 0.3-O.6OeThe thickness of the film is 10 to 20 μm.
4. A magnetically tuned trap comprised of the stripline resonator structure of any of claims 1 to 3, wherein: the magnetic resonance strip line resonator comprises an upper magnetic circuit and a lower magnetic circuit, wherein an air gap is arranged between the upper magnetic circuit and the lower magnetic circuit, the air gap is provided with the strip line resonator structure, and an excitation coil is arranged in the lower magnetic circuit.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114696052A (en) * | 2022-06-01 | 2022-07-01 | 西南应用磁学研究所(中国电子科技集团公司第九研究所) | Magnetic tuning filter with magnetic circuit air gap field fine tuning structure and debugging method |
| CN114978076A (en) * | 2022-07-26 | 2022-08-30 | 西南应用磁学研究所(中国电子科技集团公司第九研究所) | Miniaturized gyromagnetic filter integrated assembly |
| CN115313002A (en) * | 2022-08-17 | 2022-11-08 | 成都威频科技有限公司 | 3GHz-26.5GHz ultra wide band YIG tunable band-stop filter |
| CN115939708A (en) * | 2023-03-10 | 2023-04-07 | 成都威频科技有限公司 | Up-down coupling wide-bandwidth adjustable band-pass filter |
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2020
- 2020-06-23 CN CN202010579534.XA patent/CN111613863A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114696052A (en) * | 2022-06-01 | 2022-07-01 | 西南应用磁学研究所(中国电子科技集团公司第九研究所) | Magnetic tuning filter with magnetic circuit air gap field fine tuning structure and debugging method |
| CN114696052B (en) * | 2022-06-01 | 2022-09-13 | 西南应用磁学研究所(中国电子科技集团公司第九研究所) | Magnetic tuning filter with magnetic circuit air gap field fine tuning structure and debugging method |
| CN114978076A (en) * | 2022-07-26 | 2022-08-30 | 西南应用磁学研究所(中国电子科技集团公司第九研究所) | Miniaturized gyromagnetic filter integrated assembly |
| CN114978076B (en) * | 2022-07-26 | 2022-10-28 | 西南应用磁学研究所(中国电子科技集团公司第九研究所) | Miniaturized gyromagnetic filter integrated assembly |
| CN115313002A (en) * | 2022-08-17 | 2022-11-08 | 成都威频科技有限公司 | 3GHz-26.5GHz ultra wide band YIG tunable band-stop filter |
| CN115939708A (en) * | 2023-03-10 | 2023-04-07 | 成都威频科技有限公司 | Up-down coupling wide-bandwidth adjustable band-pass filter |
| CN115939708B (en) * | 2023-03-10 | 2023-06-02 | 成都威频科技有限公司 | Up-down coupling wide-bandwidth adjustable band-pass filter |
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