CN111602466B - Display device and method for manufacturing display device - Google Patents
Display device and method for manufacturing display device Download PDFInfo
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- CN111602466B CN111602466B CN201880086290.2A CN201880086290A CN111602466B CN 111602466 B CN111602466 B CN 111602466B CN 201880086290 A CN201880086290 A CN 201880086290A CN 111602466 B CN111602466 B CN 111602466B
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- 238000000034 method Methods 0.000 title claims description 52
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 230000001681 protective effect Effects 0.000 claims abstract description 59
- 238000009751 slip forming Methods 0.000 claims abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 19
- 238000001312 dry etching Methods 0.000 claims description 15
- 229910010272 inorganic material Inorganic materials 0.000 claims description 11
- 239000011147 inorganic material Substances 0.000 claims description 11
- 229910052582 BN Inorganic materials 0.000 claims description 9
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 300
- 230000002093 peripheral effect Effects 0.000 description 39
- 239000000463 material Substances 0.000 description 34
- 239000000758 substrate Substances 0.000 description 32
- 238000005530 etching Methods 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 17
- 238000007789 sealing Methods 0.000 description 14
- 239000011347 resin Substances 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 229920001721 polyimide Polymers 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 7
- 238000007639 printing Methods 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 238000004528 spin coating Methods 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 239000004925 Acrylic resin Substances 0.000 description 5
- 229920000178 Acrylic resin Polymers 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000011368 organic material Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Abstract
The present invention provides a display device, which comprises: a 1 st region which is provided with a plurality of pixels and includes an organic insulating layer, a 1 st inorganic insulating layer, and a 2 nd inorganic insulating layer; and a 2 nd region including an organic insulating layer, a 1 st inorganic insulating layer, and a 2 nd inorganic insulating layer, which are continuously formed from the 1 st region, respectively, the 2 nd region further including: a 1 st groove part arranged on the organic insulating layer; and a protective film disposed in contact with the upper surface of the 2 nd inorganic insulating layer, wherein the 1 st inorganic insulating layer and the 2 nd inorganic insulating layer cover the side surface, the upper end portion, and the bottom surface of the 1 st groove, and wherein the protective film overlaps at least a part of the upper surface of the organic insulating layer included in the 2 nd region, at least a part of the upper end portion of the 1 st groove, and the side surface of the 1 st groove, and the ratio of the depth of the 1 st groove to the width of the bottom surface of the 1 st groove is 1 or less.
Description
Technical Field
One embodiment of the present invention relates to a display device and a method for manufacturing the display device.
Background
As a display device used for an electric or electronic device, a display device using a liquid crystal display element using a photoelectric effect of liquid crystal or an Organic Electro-Luminescence (Organic EL) element as a display element has been developed and commercialized. In addition, touch panels, which are display devices having touch sensors mounted on display elements, have also been rapidly spread in recent years. Touch panels are indispensable components in portable information terminals such as smartphones, and worldwide development is advancing with the further advancement of information society.
When an organic EL element is used as a display element, it is known that an image with high image quality can be displayed, but on the other hand, the organic EL layer is degraded by moisture. When the display element is driven using the deteriorated organic EL layer, there is a possibility that a decrease in luminance or a display failure may occur. Therefore, a sealing layer is provided so that moisture does not mix into the organic EL layer.
In addition, in the organic EL display device, steps (sometimes referred to as ribs) are provided for dividing each image. The step may have a larger difference in height in an area outside the display area than the display area. When the step height difference is large, the film thickness of the resist formed on the sealing layer may be reduced in the manufacturing process of the display device. In addition, when the touch panel is formed on the display region, a wiring layer may be provided over the sealing layer. As described above, when the film thickness of the resist becomes thin, the sealing layer may be etched. As a result, the function of the sealing layer to block moisture may be reduced. On the other hand, patent document 1 discloses a method for manufacturing a semiconductor device, in which silicon-containing byproducts generated by etching a polysilicon layer by an RIE process are deposited on the upper surface and side surfaces of a resist mask, thereby preventing deformation of the resist mask.
Prior art literature
Patent literature
Patent document 1: japanese patent laid-open publication No. 2005-116753.
Disclosure of Invention
Technical problem to be solved by the invention
An object of the present invention is to provide a display device which can protect a sealing layer and has high reliability.
Means for solving the problems
One embodiment of the present invention is a display device including: a 1 st region which is provided with a plurality of pixels and includes an organic insulating layer, a 1 st inorganic insulating layer, and a 2 nd inorganic insulating layer; and a 2 nd region including the organic insulating layer, the 1 st inorganic insulating layer, and the 2 nd inorganic insulating layer continuously formed from the 1 st region, respectively, the 2 nd region further including: a 1 st groove portion provided in the organic insulating layer; and a protective film disposed so as to be in contact with an upper surface of the 2 nd inorganic insulating layer, wherein the 1 st inorganic insulating layer and the 2 nd inorganic insulating layer cover a side surface, an upper end portion, and a bottom surface of the 1 st groove, wherein the protective film overlaps at least a part of the upper surface of the organic insulating layer, at least a part of the upper end portion of the 1 st groove, and the side surface of the 1 st groove included in the 2 nd region, and wherein a ratio of a depth of the 1 st groove to a width of the bottom surface of the 1 st groove is 1 or less.
One embodiment of the present invention is a method for manufacturing a display device, including: a step of forming an organic insulating layer outside the display region so as to have a 1 st groove portion; a step of forming a 1 st inorganic insulating layer so as to cover an upper surface of the organic insulating layer and side surfaces, upper end portions, and bottom surfaces of the 1 st groove portion; a step of forming a 2 nd inorganic insulating layer on the 1 st inorganic insulating layer; and forming a protective film on the 2 nd inorganic insulating layer so as to overlap at least a part of an upper surface of the organic insulating layer, an upper end portion of the 1 st groove portion, and at least a part of a side surface of the 1 st groove portion, wherein a ratio of a depth of the 1 st groove portion to a width of a bottom surface of the 1 st groove portion is 1 or less.
Drawings
Fig. 1 is a plan view of a display device according to an embodiment of the present invention.
Fig. 2 is a cross-sectional view showing a display device according to an embodiment of the present invention.
Fig. 3 is a cross-sectional view showing a peripheral edge portion according to an embodiment of the present invention.
Fig. 4 is a cross-sectional view illustrating a method of manufacturing a display device according to an embodiment of the present invention.
Fig. 5 is a cross-sectional view illustrating a method of manufacturing a display device according to an embodiment of the present invention.
Fig. 6 is a cross-sectional view illustrating a method of manufacturing a display device according to an embodiment of the present invention.
Fig. 7 is a cross-sectional view illustrating a method of manufacturing a display device according to an embodiment of the present invention.
Fig. 8 is a cross-sectional view illustrating a method of manufacturing a display device according to an embodiment of the present invention.
Fig. 9 is a cross-sectional view illustrating a method of manufacturing a display device according to an embodiment of the present invention.
Fig. 10 is a cross-sectional view illustrating a method of manufacturing a display device according to an embodiment of the present invention.
Fig. 11 is a cross-sectional view illustrating a method of manufacturing a display device according to an embodiment of the present invention.
Fig. 12 is a cross-sectional view illustrating a method of manufacturing a display device according to an embodiment of the present invention.
Fig. 13 is a cross-sectional view illustrating a method of manufacturing a display device according to an embodiment of the present invention.
Fig. 14 is a cross-sectional view illustrating a method of manufacturing a display device according to an embodiment of the present invention.
Fig. 15 is a cross-sectional view showing a peripheral edge portion according to an embodiment of the present invention.
Fig. 16 is a cross-sectional view showing a peripheral portion of the prior art.
Detailed Description
An embodiment of the present invention will be described below with reference to the drawings. The embodiments described below are examples of embodiments of the present invention, and the present invention is not limited to these embodiments. In the drawings to which the present embodiment refers, the same or similar reference numerals (only A, B or the like is attached after the numerals) are given to the same parts or parts having the same functions, and the repetitive description thereof may be omitted. The dimensional ratio in the drawings may be different from the actual ratio according to the description, and some of the components may be omitted from the drawings.
In the detailed description of the present invention, when defining the positional relationship between a certain constituent and another constituent, the terms "on … …" and "under … …" include not only the positions directly above or below the constituent but also the other constituent therebetween unless otherwise specified.
< embodiment 1 >
Fig. 1 shows a display device 10 according to an embodiment of the present invention. Fig. 1 shows a top view of a display device 10.
(1-1. Structure of display device)
In fig. 1, the display device 10 has a display region 103, a peripheral portion 104, a driving circuit 105, a driving circuit 106, a driving circuit 107, a flexible printed circuit board 108, and a touch sensor 109 provided on a substrate 100. The driving circuit 105 has a function as a gate driver. The driving circuit 106 has a function as a source driver. The driving circuit 107 has a function of controlling the touch sensor. In the display region 103, a plurality of pixels 101 are arranged in a lattice shape at intervals. The pixel 101 functions as a constituent element of an image. The scanning line 145c is connected to the driving circuit 105. The signal line 147b is connected to the driver circuit 106. The pixel 101 is connected to the scanning line 145c and the signal line 147 b. The touch sensor has a 1 st sensor electrode 171 and a 2 nd sensor electrode 173. The 1 st sensor electrode 171 and the 2 nd sensor electrode 173 are connected to the driving circuit 107.
In the display device 10, an image signal is input to the driving circuit 106 via the flexible printed circuit board 108. Further, the driving circuit 105 and the driving circuit 106 drive the display element 130 in the pixel 101 via the scanning line 145c and the signal line 147 b. As a result, a still picture and an animation are displayed in the display area 103. In addition, the display area 103 is sometimes referred to as the 1 st area.
In the touch sensor 109, the 1 st sensor electrode 171 functions as a transmission electrode. The 2 nd sensor electrode 173 functions as a receiving electrode. In the touch sensor 109, the capacitance between the 1 st sensor electrode 171 and the 2 nd sensor electrode 173 changes when a person approaches the touch sensor 109 with a finger. The touch sensor 109 detects positional information using the capacitance change.
(1-2. Structure of layers of display device)
Details of each structure of the display device 10 are shown below. Fig. 2 is a cross-sectional view showing the pixels 101 (between A1 and A2), the peripheral edge 104 (between B1 and B2) which is a region around the display region 103 where the pixels 101 are not arranged, and the terminal (between C1 and C2) which is a region including the conductive layer 148.
The substrate 100 and the substrate 200 may use a glass substrate or an organic resin substrate. As the organic resin substrate, for example, a polyimide substrate can be used. The organic resin substrate can be formed to have a plate thickness of several micrometers to several tens of micrometers, and a flexible sheet-like display can be realized. The substrate 100 and the substrate 200 are required to have transparency in order to take out light emitted from the display element 130 described later to the outside. Since the substrate on the side from which the light emitted from the display element 130 is not extracted does not need to be transparent, a substrate having an insulating layer formed on the surface of a metal substrate in addition to the above-described materials can be used. Further, cover glass, a protective film, or the like may be provided on the 2 nd surface (the surface on the outside of the substrate when the cross section is seen) of the substrate 100 or 200. This can prevent damage to the display device. The substrate 200 has a function of protecting the display element 130, and may not be required if it can be sufficiently protected by the sealing layer 161.
The insulating layer 141 is provided on the substrate 100 and functions as a base film. This suppresses diffusion of impurities from the substrate 100 into the semiconductor layer 142, typically diffusion of alkali metal, water, hydrogen, and the like.
The transistor 110 has a semiconductor layer 142, a gate insulating layer 143, a gate electrode 145a, a source electrode 147a, and a drain electrode 147c. The transistor 110 has a top gate and a top contact structure, but the present invention is not limited to this, and may have a bottom gate structure or a bottom contact structure.
The semiconductor layer 142 is provided over the insulating layer 141 in the pixels 101 (between A1-A2). As the semiconductor layer 142, silicon, an oxide semiconductor, an organic semiconductor, or the like can be used.
The gate insulating layer 143 is disposed on the insulating layer 141 and the semiconductor layer 142. The gate insulating layer 143 can use silicon oxide, silicon oxynitride, silicon nitride, or other high dielectric constant inorganic material.
The gate electrode 145a is disposed on the gate insulating layer 143. The gate electrode 145a is appropriately connected to the scan line 145 c. The gate electrode 145a is provided on the gate insulating layer 143 in the same manner as the capacitor electrode 145 b. The gate electrode 145a and the capacitor electrode 145b are each formed of a conductive material selected from tantalum, tungsten, titanium, molybdenum, aluminum, and the like. The gate electrode 145a and the capacitor electrode 145b may have a single-layer structure of the conductive material described above, or may have a stacked structure.
The insulating layer 149 is formed over the gate insulating layer 143, the gate electrode 145a, and the capacitor electrode 145b using the same material as the gate insulating layer 143. The insulating layer 149 may be a single layer or a stacked structure of the above materials.
A source electrode 147a and a drain electrode 147c are provided on the insulating layer 149. The source electrode 147a and the drain electrode 147c are appropriately connected to the signal line 147 b. The source electrode 147a and the drain electrode 147c can be made of the same materials as those exemplified as the material of the gate electrode 145 a. The same material as the gate electrode 145a may be used, or a different material may be used.
In the capacitor element 120, the gate insulating layer 143 is used as a dielectric, and a source or drain region of the semiconductor layer 142 and the capacitor electrode 145b can be used.
The planarizing layer 150 has a function of planarizing a step formed by the transistor 110 or the like, and is provided over the insulating layer 149, the source electrode 147a, and the drain electrode 147 c. The planarization layer 150 includes an organic resin. In this example, acrylic is used for the planarization layer 150. The planarizing layer 150 is not limited to an acrylic resin, and an epoxy resin, a polyimide resin, a polyamide resin, a polystyrene resin, a polyethylene terephthalate resin, or the like may be used. The planarizing layer 150 may be a laminate of an organic resin and an inorganic material.
In the capacitor element 121, the insulating layer 154 may be used as a dielectric, and the conductive layer 153 and the pixel electrode 155 may be used.
The conductive layer 153 is disposed on the planarization layer 150. The conductive layer 153 may be formed using the same material as the gate electrode 145a or a different material.
An insulating layer 154 is disposed on the planarizing layer 150 and the conductive layer 153. As a material of the insulating layer 154, an inorganic material such as silicon nitride can be used. The insulating layer 154 may be formed of the same material as the gate insulating layer 143.
The pixel electrode 155 has a function as an anode of the display element 130. The pixel electrode 155 preferably has a property of reflecting light. The former is preferably an oxide conductive material such as Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO), and the latter is preferably a conductive material with high surface reflectivity such as aluminum or silver. In order to achieve these functions, a structure in which the above-described materials are stacked in the structure of the pixel electrode 155, specifically, a structure in which an oxide conductive layer such as Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO) is stacked on a conductive layer having high surface reflectivity such as aluminum or silver can be used.
The display element 130 can use a pixel electrode 155, an organic EL layer 159, and a counter electrode 160. That is, the display element 130 can be said to be an organic EL element. The display element 130 has a so-called top emission type structure in which light emitted from the organic EL layer 159 is emitted toward the counter electrode 160. The display element 130 is not limited to the top emission type, and may be of a bottom emission type.
An organic EL layer 159 is disposed on the pixel electrode 155. The organic EL layer 159 has a light-emitting material such as an organic electroluminescent material.
The counter electrode 160 has a function as a cathode of the display element 130. The counter electrode 160 is provided so as to continuously cover the pixel electrode 155 over the plurality of pixel electrodes 155. In order to transmit light emitted from the organic EL layer 159 to the counter electrode 160, a material having light transmittance and conductivity, for example, a magnesium silver (MgAg) alloy having a film thickness of 10nm or less can be used.
The opposite electrode 160 is required to have light transmittance and reflectivity for forming a microcavity with the reflective surface of the pixel electrode 155. Therefore, the counter electrode 160 can be formed as a semi-permeable film. Specifically, the layer made of silver, magnesium, or an alloy thereof can be formed to have a film thickness of a degree that transmits light.
The rib 157 covers a peripheral edge portion of the pixel electrode 155, which is a part of the display element 130, in order to divide each pixel 101 in the display region 103. The rib 157 contains an organic insulating material (organic resin material), which may also be referred to as an organic insulating layer. For example, polyimide resin can be used for the rib 157. In addition, in order to improve the contrast of the display image, the rib 157 may use an organic resin material containing a black pigment.
As shown in fig. 2, the rib 157 is provided on the substrate 100, the insulating layer 141, the gate insulating layer 143, the insulating layer 149, the planarizing layer 150, and the insulating layer 154 in the peripheral portion 104 (between B1 and B2). The rib 157 covers the upper surface and the side surfaces of the planarization layer 150 together with the insulating layer 154. Details of the rib structure and the like in the peripheral edge 104 (between B1 and B2) will be described later.
The sealing layer 161 has a function of preventing moisture from being mixed into the display element 130 from the outside of the display device 10. A1 st inorganic insulating layer 162, an organic insulating layer 164, and A2 nd inorganic insulating layer 166 are sequentially stacked on a sealing layer 161 in the display region 103 including the pixels 101 (between A1-A2). Meanwhile, the 1 st inorganic insulating layer 162 and the 2 nd inorganic insulating layer 166 are laminated on the peripheral edge 104 (between B1 and B2). In addition, the 1 st inorganic insulating layer 162 is in contact with the insulating layer 154 containing an inorganic material. In this way, the insulating layer 154, the 1 st inorganic insulating layer 162, and the 2 nd inorganic insulating layer 166 are laminated on the peripheral edge 104 to form the moisture barrier structure 167. Details of the 1 st inorganic insulating layer 162 and the 2 nd inorganic insulating layer 166 are described later.
The organic insulating layer 164 covers foreign substances or the like mixed in during the manufacture of the 1 st inorganic insulating layer 162, and thereby the 2 nd inorganic insulating layer 166 can be stacked flatly on the organic insulating layer 164. By stacking the 2 nd inorganic insulating layer 166 flat on the organic insulating layer 164, the 2 nd inorganic insulating layer 166 can favorably cover the organic insulating layer 164. The film thickness of the organic insulating layer 164 is not limited, but is preferably 5 μm to 20 μm. The same material as the planarization layer 150 can be used for the organic insulating layer 164.
The touch sensor 109 includes a 1 st sensor electrode 171, an insulating layer 172, and a 2 nd sensor electrode 173. As the material of the 1 st sensor electrode 171 and the 2 nd sensor electrode 173, a material having light transmittance can be used. Specifically, indium Tin Oxide (ITO) can be used, for example. Further, TAT (Ti/Al/Ti) or the like may be used, but is not limited thereto.
The adhesive layer 195 can use an inorganic material, an organic material, or a composite material of an organic material and an inorganic material. For example, an acrylic resin can be used for the adhesive layer 195.
The conductive layer 148 is laminated on the insulating layer 149 at the terminal portion (between C1 and C2), and the conductive layer 148 is connected to the flexible printed circuit board 108 via the anisotropic conductive film 181. The conductive layer 148 may be formed using the same material as the source electrode 147a and the drain electrode 147 c.
(1-3. Structure of peripheral portion)
Outside the display area 103, there is a peripheral edge 104 which is an area where the pixels 101 are not arranged. Details of the peripheral edge 104 (between B1 and B2 in fig. 1) will be described with reference to fig. 3.
Fig. 3 is a cross-sectional view of the peripheral edge 104. The peripheral edge 104 is also referred to as a 2 nd area. The rib 157, the 1 st inorganic insulating layer 162, and the 2 nd inorganic insulating layer 166 are also disposed in the display region 103, and are formed continuously from the display region 103 to the peripheral edge 104.
In the 1 st groove 158-1, the ratio of the depth 158-1H of the 1 st groove 158-1 to the width 158-1W of the bottom surface 158-1F of the 1 st groove 158-1 (hereinafter, sometimes referred to as "aspect ratio") is 1 or less. For example, if the depth-to-width ratio is 1, the depth 158-1H of the 1 st groove 158-1 is 10 μm if the width 158-1W of the bottom surface 158-1F of the 1 st groove 158-1 is 10 μm. In addition, if the width 158-1W of the bottom surface 158-1F of the 1 st groove 158-1 is 10 μm when the aspect ratio is made to be 0.5, the depth 158-1H of the 1 st groove 158-1 is 5 μm.
In addition, the rib 157 can further have a 2 nd slot portion 158-2. At this time, the upper end 158-2B, the side surface 158-2C, the lower end 158-2D, and the bottom surface 158-2F of the 2 nd groove 158-2 can be provided on the peripheral edge 104. The width of the bottom surface 158-2F of the 2 nd groove 158-2 may be equal to or different from the width 158-1W of the bottom surface 158-1F of the 1 st groove 158-1. The depth of the 2 nd groove 158-2 may be equal to or different from the depth 158-1H of the 1 st groove 158-1.
When the rib 157 further has the 2 nd groove 158-2, the ratio of the width 158-1W of the bottom surface 158-1F of the 1 st groove 158-1 to the distance 158L between the upper end 158-1B of the 1 st groove 158-1 and the upper end 158-2B of the 2 nd groove 158-2 is set to 2 or less, and when the protective film 165 is formed by dry etching as will be described later, the protective film 165 is easily formed at a position overlapping the upper surface a of the rib 157 located between the upper end 158-1B of the 1 st groove 158-1 and the upper end 158-2B of the 2 nd groove 158-2, and the width of the process design is wide. This is because, when this condition is satisfied, both the component formed by dry etching of the portion disposed so as to cover the side surface 158-1C and the bottom surface 158-1F of the 1 st groove 158-1 and the component formed by dry etching of the portion disposed so as to cover the side surface 158-2C and the bottom surface 158-2F of the 2 nd groove 158-2 in the 2 nd inorganic insulating layer 166 are easily deposited at the position overlapping the upper surface a of the rib 157. In addition, the ratio of the width 158-1W of the bottom surface 158-1F of the 1 st groove 158-1 to the distance 158L between the upper end 158-1B of the 1 st groove 158-1 and the upper end 158-2B of the 2 nd groove 158-2 is 2 or less, for example, when the ratio of the width 158-1W of the bottom surface 158-1F of the 1 st groove 158-1 to the distance 158L is 2, if the distance 158L is 10 μm, the width 158-1W of the bottom surface 158-1F of the 1 st groove 158-1 is 20 μm.
The distance 158L between the upper end 158-1B of the 1 st groove 158-1 and the upper end 158-2B of the 2 nd groove 158-2 is 10 μm or less. As will be described later, when the distance 158L between the upper end 158-1B of the 1 st groove 158-1 and the upper end 158-2B of the 2 nd groove 158-2 is 10 μm or less, the protective film 165 is easily formed on the portion of the upper surface 157A of the rib 157 between the upper end 158-1B of the 1 st groove 158-1 and the upper end 158-2B of the 2 nd groove 158-2.
Further, the width 158-1W of the bottom surface 158-1F of the 1 st groove 158-1 is preferably 5 μm or more and 30 μm or less. When the width 158-1W of the bottom surface 158-1F of the 1 st groove 158-1 is larger than 30 μm, the efficiency of forming the protective film 165 on the upper surface 157A of the rib 157 is lowered. This is because, when the width 158-1W of the bottom surface 158-1F of the 1 st groove 158-1 is larger than 30 μm, the efficiency of depositing the component formed by dry etching in the portion of the 2 nd inorganic insulating layer 166 disposed so as to cover the side surface 158-1C and the bottom surface 158-1F of the 1 st groove 158-1 on the upper surface 157A of the rib 157 is reduced.
The 1 st inorganic insulating layer 162 is disposed so as to cover the upper surface 157A of the rib 157, the side surface 158-1C, the upper end 158-1B, and the bottom surface 158-1F of the 1 st groove 158-1. In the case where the rib 157 further has the 2 nd groove 158-2, the 1 st inorganic insulating layer 162 may be disposed so as to cover the side surface 158-2C, the upper end portion 158-2B, and the bottom surface 158-2F of the 2 nd groove 158-2. In addition, the 2 nd inorganic insulating layer 166 is provided over the 1 st inorganic insulating layer 162. In addition, the 1 st inorganic insulating layer 162 is in contact with the insulating layer 154 in the bottom surface 158-1F of the 1 st groove 158-1 and the bottom surface 158-2F of the 2 nd groove 158-2, and a moisture blocking structure 167, which is a structure in which the insulating layer 154, the 1 st inorganic insulating layer 162, and the 2 nd inorganic insulating layer 166 are laminated, is formed.
As the 1 st inorganic insulating layer 162 and the 2 nd inorganic insulating layer 166, inorganic insulating materials such as silicon nitride, silicon oxide, silicon nitride oxide, and silicon nitride oxide can be used. In this example, a silicon nitride film can be used for the 1 st inorganic insulating layer 162 and the 2 nd inorganic insulating layer 166. The silicon nitride film is dense and suitable in terms of moisture barrier. The 1 st inorganic insulating layer 162 is not limited in thickness, but is preferably 50nm to 2 μm.
The protective film 165 is provided in contact with the upper surface 166A of the 2 nd inorganic insulating layer 166. The protective film 165 overlaps at least a portion of the upper surface 157A of the rib 157, the upper end 158-1B of the 1 st groove 158-1, and the side surface 158-1C of the peripheral edge 104 (between B1-B2). The protective film 165 may overlap the entire side surface 158-1C of the 1 st groove 158-1. The protective film 165 contains boron nitride, fluorided silicon oxide (SiOF) x ) And the like. In this example, the protective film 165 contains boron nitride as a main component. The protective film 165 is preferably harder than the resist 168 as described laterIn addition, in order to form a hard film, the protective film 165 preferably contains boron nitride as a main component. The protective film 165 is formed by dry etching as described later. More specifically, the protective film 165 is formed to contain a component contained in the 2 nd inorganic insulating layer 166 or a component contained in the etching gas of the 2 nd inorganic insulating layer 166. The protective film 165 can be formed by dry etching the 2 nd inorganic insulating layer 166 when the aspect ratio, which is the ratio of the depth 158-1H of the 1 st groove 158-1 to the width 158-1W of the bottom 158-1F of the 1 st groove 158-1, is 1 or less. The film thickness of the protective film 165 is not limited, and can be 100nm or less.
(1-4. Method for manufacturing display device)
Hereinafter, a method for manufacturing the display device 10 will be described with reference to fig. 4 to 14.
(1-4-1. Formation of transistors)
First, as shown in fig. 4, after the insulating layer 141, the semiconductor layer 142, and the gate insulating layer 143 are formed on the 1 st surface (upper surface when viewed in a cross-sectional direction) of the substrate 100, the gate electrode 145a is formed on the gate insulating layer 143. Each layer can be processed into a predetermined shape using an appropriate photolithography method, nanoimprint method, inkjet method, etching method, or the like.
The substrate 100 may be a glass substrate or an organic resin substrate. When an organic resin substrate is used as the substrate 100, for example, a polyimide substrate can be used.
The insulating layer 141 is formed using a material such as silicon oxide, silicon oxynitride, or silicon nitride. The insulating layer 141 may be a single layer or a stacked layer. The insulating layer 141 can be formed by a CVD method, a spin coating method, a printing method, or the like.
In the case where a silicon material is used for the semiconductor layer 142, amorphous silicon, polysilicon, or the like can be used, for example. In the case where an oxide semiconductor is used for the semiconductor layer 142, a metal material such as indium, gallium, zinc, titanium, aluminum, tin, or cerium can be used. For example, an oxide semiconductor (IGZO) having indium, gallium, and zinc can be used. The semiconductor layer 142 can be formed by a sputtering method, a vapor deposition method, a plating method, a CVD method, or the like.
One or more insulating films including silicon oxide, silicon oxynitride, silicon nitride oxide, aluminum oxide, magnesium oxide, hafnium oxide, or the like can be used for the gate insulating layer 143. Can be formed by the same method as the insulating layer 141.
The gate electrode 145a can be formed using a material selected from metal elements such as tungsten, aluminum, chromium, copper, titanium, tantalum, molybdenum, nickel, iron, cobalt, tungsten, indium, and zinc, an alloy containing the metal elements, an alloy in which the metal elements are combined, or the like. In addition, a material containing nitrogen, oxygen, hydrogen, or the like may be used for the gate electrode 145 a. For example, a stacked film of an aluminum (Al) layer and a titanium layer (Ti) formed by a sputtering method can be used as the gate electrode 145 a.
Next, an insulating layer 149 is formed over the gate insulating layer 143, the gate electrode 145a, and the capacitor electrode 145 b. The insulating layer 149 can be formed using the same material and method as the gate insulating layer 143. For example, a silicon oxide film formed by a plasma CVD method can be used as the insulating layer 149.
Next, a source electrode 147a and a drain electrode 147c are formed over the insulating layer 149. The source electrode 147a and the drain electrode 147c can be formed using the same materials and methods as the gate electrode 145 a. After forming an opening in the insulating layer 149, a source electrode 147a and a drain electrode 147c are formed and connected to source and drain regions of the semiconductor layer 142. In the terminal portion (between C1 and C2), the conductive layer 148 is formed simultaneously with the source electrode 147a and the drain electrode 147C.
Next, a planarizing layer 150 is formed over the insulating layer 149, the source electrode 147a, and the drain electrode 147 c. The planarization layer 150 can use an organic insulating material such as an acrylic resin, an epoxy resin, or a polyimide. The planarizing layer 150 can be formed by spin coating, printing, inkjet, or the like. For example, an acrylic resin formed by spin coating can be used as the planarizing layer 150. The planarization layer 150 is formed to a level where the upper surface is planarized. In addition, in the planarizing layer 150, an opening portion 150A for electrically connecting the transistor 110 and the pixel electrode 155 is formed in a part of the pixel 101 (between A1-A2). The shape of the planarization layer 150 in the peripheral edge 104 (between B1 and B2) is processed into a predetermined shape. Further, the planarization layer 150 of the terminal portion (between C1 and C2) is removed.
(1-4-2. Formation of display element)
Next, a capacitor element 121 (formed of the conductive layer 153, the insulating layer 154, and the pixel electrode 155), a display element 130 (formed of the pixel electrode 155, the organic EL layer 159, and the counter electrode 160), and an organic insulating layer 157b are formed over the planarizing layer 150. Each layer can be processed into a predetermined shape by a photolithography method, a nanoimprint method, an inkjet method, an etching method, or the like, as appropriate.
First, as shown in fig. 5, a conductive layer 153 is formed over the planarizing layer 150. The conductive layer 153 can be formed using the same material and method as the gate electrode 145 a. For example, a stacked film of molybdenum, aluminum, and molybdenum formed by a sputtering method can be used for the conductive layer 153.
Next, an insulating layer 154 is formed over the conductive layer 153 and the planarizing layer 150. The insulating layer 154 is formed using the same material and method as the gate insulating layer 143. For example, a silicon nitride film formed by a plasma CVD method can be used as the insulating layer 154. The insulating layer 154 is removed from the terminal portion (between C1 and C2), and may not be processed in other portions.
Next, in the pixel 101 (between A1 and A2), a pixel electrode 155 is formed over the insulating layer 154. For example, a light-reflective metal material such as aluminum (Al) or silver (Ag) may be used for the pixel electrode 155, or a transparent conductive layer formed of Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO) having good hole injection property may be stacked on a light-reflective metal layer. The pixel electrode 155 is formed by the same method as the gate electrode 145 a. For example, a stacked film of ITO, silver, or ITO formed by a sputtering method can be used as the pixel electrode 155.
Next, an organic insulating layer 157b is formed over the insulating layer 154 and the pixel electrode 155. For example, a polyimide film formed by spin coating can be used as the organic insulating layer 157b.
Next, as shown in fig. 6, an opening 157G is formed in the organic insulating layer 157b so as to expose the upper surface of the pixel electrode 155. In addition, in the peripheral edge 104 (between B1 and B2), the 1 st groove 158-1 is formed in the organic insulating layer 157B in order to form the moisture barrier structure described above. At this time, the ratio of the depth 158-1H of the 1 st groove 158-1 to the width 158-1W of the bottom surface 158-1F of the 1 st groove 158-1 is 1 or less. The 1 st groove 158-1 may be formed such that the width 158-1W of the bottom surface 158-1F of the 1 st groove 158-1 is 5 μm or more and 30 μm or less. As described above, the organic insulating layer 157b having the opening 157G and the 1 st groove 158-1 formed therein is referred to as a rib 157.
In the peripheral edge 104 (between B1 and B2), the 2 nd groove 158-2 is formed in the organic insulating layer 157B. The 1 st and 2 nd groove portions 158-1 and 158-2 may be formed such that the ratio of the width 158-1W of the bottom surface 158-1F of the 1 st groove portion 158-1 to the distance 158L between the upper end portion 158-1B of the 1 st groove portion 158-1 and the upper end portion 158-2B of the 2 nd groove portion 158-2 is 2 or less. Further, the 1 st and 2 nd groove portions 158-1 and 158-2 may be formed such that a distance 158L between an upper end portion 158-1B of the 1 st groove portion 158-1 and an upper end portion 158-2B of the 2 nd groove portion 158-2 is 10 μm or less. Further, the organic insulating layer 157b of the terminal portion (between C1 and C2) is removed.
Next, as shown in fig. 7, in the pixel 101 (between A1 to A2), an organic EL layer 159 is formed on the pixel electrode 155 and the rib 157. The organic EL layer 159 is formed using a low-molecular-weight or high-molecular-weight organic material. When a low-molecular organic material is used, the organic EL layer 159 may include a hole injection layer or an electron injection layer, a hole transport layer or an electron transport layer, and the like, in addition to a light-emitting layer containing a light-emitting organic material, with the light-emitting layer interposed therebetween.
The organic EL layer 159 is formed so as to overlap at least the pixel electrode 155. The organic EL layer 159 is formed by a vacuum deposition method, a printing method, a spin coating method, or the like. When the organic EL layer 159 is formed by the vacuum deposition method, a region where no film is formed can be formed while providing an appropriate shadow mask. The organic EL layer 159 may be formed using a material different from that of an adjacent pixel, or the same organic EL layer 159 may be used for all pixels.
Next, in the pixel 101 (between A1 to A2), the counter electrode 160 is formed over the pixel electrode 155 and the organic EL layer 159. The counter electrode 160 may be a transparent conductive film of Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO), or an alloy of silver (Ag) and magnesium. The counter electrode 160 can be formed by a vacuum deposition method or a sputtering method. For example, an alloy film of silver (Ag) and magnesium formed by vapor deposition can be used as the counter electrode 160. The counter electrode 160 may be formed without being processed. At this time, the counter electrode 160 may be formed at the peripheral edge 104 (between B1 and B2), but is removed from the terminal portion (between C1 and C2).
(1-4-3. Formation of sealing layer)
Next, as shown in fig. 8, A1 st inorganic insulating layer 162, an organic insulating layer 164, and A2 nd inorganic insulating layer 166, which are sealing layers 161, are sequentially formed over the counter electrode 160 in the pixel 101 (between A1-A2). At this time, in the peripheral edge 104 (between B1 and B2), the 1 st inorganic insulating layer 162 is formed so as to cover the upper surface 157A of the rib 157 and the side surfaces 158-1C, the upper end 158-1B and the bottom surface 158-1F, and the side surfaces 158-2C, the upper end 158-2B and the bottom surface 158-2F of the 1 st groove 158-1 and the 2 nd groove 158-2. The organic insulating layer 164 formed on the peripheral edge 104 (between B1 and B2) is removed. That is, in the peripheral edge 104 (between B1 and B2), the 2 nd inorganic insulating layer 166 is formed on the 1 st inorganic insulating layer 162. The sealing layer 161 is formed so as to cover the entire surface of the display region 103. In the terminal portion (between C1 and C2), the 1 st inorganic insulating layer 162 and the 2 nd inorganic insulating layer 166 are formed over the conductive layer 148 and the insulating layer 149.
The organic insulating layer 164 can use a material such as acrylic, polyimide, or epoxy. The organic insulating layer 164 may be formed by an inkjet method, a spin coating method, a vapor deposition method, a spray coating method, a printing method, or the like. The film thickness of the organic insulating layer 164 is not limited, and may be, for example, 5 μm or more and 20 μm or less.
As the 1 st inorganic insulating layer 162 and the 2 nd inorganic insulating layer 166, inorganic insulating materials such as silicon nitride, silicon oxide, silicon nitride oxide, and silicon nitride oxide can be used. The 1 st inorganic insulating layer 162 and the 2 nd inorganic insulating layer 166 are formed by a film formation method having high coverage (i.e., long mean free path of film formation particles) so as to cover the upper surface 157A of the rib 157 and the side surfaces 158-1C, the upper end portions 158-1B and the bottom surfaces 158-1F of the 1 st groove portion 158-1 and the side surfaces 158-2C, the upper end portions 158-1B and the bottom surfaces 158-2F of the 2 nd groove portion 158-2. For example, a silicon nitride film formed by a plasma CVD method can be used for the 1 st inorganic insulating layer 162 and the 2 nd inorganic insulating layer 166. The thickness of the 1 st inorganic insulating layer 162 and the 2 nd inorganic insulating layer 166 is not limited, and may be 50nm to 2 μm. The film formation method is not limited to the plasma CVD method, and a Molecular Beam Epitaxy (MBE) method may be used as a method for forming a film having a long mean free path of particles.
Next, as shown in fig. 9, a protective film 165 is formed over the 2 nd inorganic insulating layer 166. The protective film 165 may be formed to contain an inorganic material. The protective film 165 is formed so as to overlap at least a part of the upper surface 157A of the rib 157, the upper end 158-1B of the 1 st groove 158-1, and the side surface 158-1C of the peripheral edge 104 (between B1 and B2). The protective film 165 may be formed so as to overlap the entire side surface 158-1C of the 1 st groove 158-1. The protective film 165 is formed so that its film thickness is 100nm or less. The protective film 165 is formed by dry etching the 2 nd inorganic insulating layer 166. For example, when the 2 nd inorganic insulating layer 166 is silicon nitride, boron trichloride (BCl) is used as an etching gas 3 ) After dry etching of the 2 nd inorganic insulating layer 166 with a mixed gas of nitrogen, a protective film 165 containing boron nitride as a main component is formed. In the case where dry etching of the 2 nd inorganic insulating layer 166 made of silicon nitride is performed using a mixed gas of boron trichloride and nitrogen as an etching gas, it is sufficient to perform dry etching of only several hundred nm in order to form the protective film 165. In the case where the 2 nd inorganic insulating layer 166 is silicon nitride, for example, tetrafluoromethane (CF) is used as an etching gas 4 ) And trifluoromethane (CHF) 3 ) After dry etching of the 2 nd inorganic insulating layer 166, a protective film 165 containing fluorinated silica as a main component is formed. In this case, the protective film 165 may contain an organic substance.
In addition, when the protective film 165 is formed by dry etching, the protective film 165 is not formed on the bottom surface 158-1F because the etching proceeds faster than the protective film 165 is formed on the bottom surface 158-1F of the 1 st groove 158-1.
Etching conditions favorable for forming the protective film 165 are, for example, an etching gas of BCl 3 /N 2 =45/5 sccm, etching pressure of 1Pa, etching power of 500W. However, the composition ratio of the etching gas is not limited thereto, and N may be contained at a ratio of 5% to 20% 2 . The etching pressure is not limited to this, and may be any value of 10Pa or less, for example. The etching power is not limited to this, and any output of 200W or more may be used, for example.
In the case where the rib 157 further has the 2 nd groove 158-2, when the distance 158L between the upper end 158-1B of the 1 st groove 158-1 and the upper end 158-2B of the 2 nd groove 158-2 is 10 μm or less, the protective film 165 is easily formed on the portion between the upper end 158-1B of the 1 st groove 158-1 and the upper end 158-2B of the 2 nd groove 158-2 in the upper surface 157A of the rib 157.
(1-4-4. Removal of inorganic insulating layer 162 1 and inorganic insulating layer 166 2 of terminal portion)
Next, the 1 st inorganic insulating layer 162 and the 2 nd inorganic insulating layer 166 in the terminal portion (between C1 and C2) are removed by dry etching.
First, as shown in fig. 10, a resist 168 is formed on the pixels 101 (between A1-A2) and the peripheral edge 104 (B1-B2) by photolithography, for example.
Next, as shown in fig. 11, the 1 st inorganic insulating layer 162 and the 2 nd inorganic insulating layer 166 in the terminal portion (between C1 and C2) are removed by dry etching. At this time, even in the portion 168A or the like of the resist 168 that overlaps the upper end 158-1B and the side surface 158-1C of the 1 st groove 158-1, the film thickness of the resist 168 becomes thin, and the protective film 165 is present in the peripheral portion 104, so that the 2 nd inorganic insulating layer 166 or the 1 st inorganic insulating layer 162 located under the thinned resist 168 in the peripheral portion 104 can be prevented from being removed.
Next, as shown in fig. 12, the resist 168 is removed. The method for removing the resist 168 in this manner is not particularly limited, and for example, a method such as ashing with oxygen plasma to remove the resist can be used.
(1-4-5. Formation of touch sensor)
Next, a touch sensor 109 is formed as shown in fig. 13. First, the 1 st sensor electrode 171 is formed. The 1 st sensor electrode 171 is formed into a film by sputtering in this example. The 1 st sensor electrode 171 is not limited to the sputtering method, and may be formed by vapor deposition, printing, coating, molecular Beam Epitaxy (MBE), or the like. The 1 st sensor electrode 171 is processed by photolithography and etching after film formation. The 1 st sensor electrode 171 can be made of the same material as the gate electrode 145a, except for Indium Zinc Oxide (IZO), indium Tin Oxide (ITO), zinc oxide (ZnO), or Indium Tin Zinc Oxide (ITZO).
Next, an insulating layer 172 is formed on the 1 st sensor electrode 171 and the protective film 165. The insulating layer 172 is formed by a coating method. As the insulating layer 172, a material such as acrylic, polyimide, or epoxy can be used. The insulating layer 172 can be formed to have a thickness of several hundred nm to ten μm by spin coating, vapor deposition, spray coating, ink jet, printing, or the like.
Next, the insulating layer 172 is processed. At this time, the insulating layer 172 is processed by photolithography and etching. Further, if a photosensitive material is contained in the insulating layer 172, only photolithography may be used.
Next, the 2 nd sensor electrode 173 is formed. The 2 nd sensor electrode 173 is formed using a material having light transmittance. The 2 nd sensor electrode 173 is formed by, for example, sputtering. The 2 nd sensor electrode 173 is not limited to the sputtering method, and a vapor deposition method, a printing method, an inkjet method, or the like may be used. For example, indium Tin Oxide (ITO) formed by a sputtering method may be used for the 2 nd sensor electrode 173.
(1-4-6. Bonding with opposing substrate)
Next, as shown in fig. 14, a substrate 200 serving as a counter substrate is bonded to the substrate 100 by an adhesive layer 195. As the adhesive layer 195, for example, an epoxy resin, an acrylic resin, or the like can be used.
Finally, the flexible printed circuit board 108 is electrically connected to the conductive layer 148 using the anisotropic conductive film 181. At this time, the film existing between the terminal portions (C1-C2) can be removed by laser irradiation or the like. The anisotropic conductive film 181 can be formed by containing metal particles such as silver and copper in a resin and coating the metal particles.
By the above method, the display device 10 shown in fig. 2 can be manufactured.
(1-5. Function of peripheral edge portion)
Fig. 16 is a cross-sectional view of a peripheral portion 204 of the prior art without the protective film 165.
As shown in fig. 16, when the resist 168 is provided in the peripheral portion 204 having no protective film 165, the thickness of the portion 168A of the resist 168 overlapping the upper end 158-1B and the side surface 158-1C of the 1 st groove 158-1 may be smaller than the thickness of the resist 268 overlapping the upper surface 157A of the rib 157. In this case, in particular, when the 1 st inorganic insulating layer 162 and the 2 nd inorganic insulating layer 166 in the terminal portion (between C1 and C2) are removed, the 2 nd inorganic insulating layer 166 or the 1 st inorganic insulating layer 162 located under the thinned resist 168 may be removed.
Fig. 15 is a cross-sectional view of the case where a resist 168 is formed on the peripheral edge 104 in the step of removing the 1 st inorganic insulating layer 162 and the 2 nd inorganic insulating layer 166 in the terminal portion (between C1 and C2) in the manufacture of the display device 10. As shown in fig. 15, by providing the peripheral portion 104 with the protective film 165, in the manufacturing process of the display device 10 (particularly, the process of removing the 1 st inorganic insulating layer 162 and the 2 nd inorganic insulating layer 166 in the terminal portion (between C1 and C2)), for example, in the portion 168A of the resist 168 overlapping the upper end 158-1B and the side surface 158-1C of the 1 st groove 158-1, the 1 st inorganic insulating layer 162 and the 2 nd inorganic insulating layer 166 can be protected even if the film thickness of the resist 168 is reduced. That is, when the 1 st inorganic insulating layer 162 and the 2 nd inorganic insulating layer 166 are removed from the terminal portion (between C1 and C2), the removal of the 2 nd inorganic insulating layer 266 or the 1 st inorganic insulating layer 262 located under the thinned resist 168 in the peripheral portion 104 can be prevented. Therefore, the function of the sealing layer 161 can be normally exhibited, and the display device 10 can block moisture. That is, deterioration of the organic EL layer 159 due to moisture can be suppressed. As a result, a highly reliable display device can be provided.
The protective film 165 protects the 1 st inorganic insulating layer 162 and the 2 nd inorganic insulating layer 166, and is sufficient when the protective film 165 is harder than the resist 168. Since the protective film 165 is a hard film when the protective film 165 contains boron nitride as a main component, it is preferable that the protective film 165 contains boron nitride as a main component. In addition, since the protective film 165 is a hard film when the protective film 165 contains boron nitride, the protective film 165 does not need to have a thick film thickness, and may be, for example, 100nm or less.
In the case where the rib 157 has the 2 nd groove 158-2, when the distance 158L between the upper end 158-1B of the 1 st groove 158-1 and the upper end 158-2B of the 2 nd groove 158-2 is 10 μm or less, the protective film 165 is easily formed on the portion between the upper end 158-1B of the 1 st groove 158-1 and the upper end 158-2B of the 2 nd groove 158-2, among the upper surfaces 157A of the rib 157, among the upper surfaces 157A of the 1 st inorganic insulating layer 162 and the 2 nd inorganic insulating layer 166 on the portion between the upper end 158-1B of the 1 st groove 158-1 and the upper end 158-2B of the 2 nd groove 158-2 are more protected.
Even other operational effects different from those which can be achieved by the embodiments described above are understood to be operational effects which can be achieved by the present invention, as long as they are apparent from the description of the present specification, or which can be easily predicted by those skilled in the art.
Description of the reference numerals
10 display device, 20 display device, 100 substrate, 101 pixel, 103 display region, 104 peripheral portion, 105 driving circuit, 106 driving circuit, 107 driving circuit, 108 flexible printed circuit board, 109 touch sensor, 110 transistor, 120 capacitance element, 121 capacitance element, 130 display element, 141 insulating layer, 142 semiconductor layer, 143 gate insulating layer, 145a gate electrode, 145b capacitance electrode, 145c scan line, 147a source electrode, 147b signal line, 147c drain electrode, 148 conductive layer, 149 insulating layer, 150 planarization layer, 150-1 st planarization layer groove, 150-2 nd planarizing layer groove, 150A opening portion, 153 conductive layer, 154 insulating layer, 155 pixel electrode, 157 rib, 157b organic insulating layer, 158-1 st groove portion, 158-2 nd groove portion, 159 organic EL layer, 160 counter electrode, 161 sealing layer, 162 st inorganic insulating layer, 164 organic insulating layer, 165 protective film, 166 nd inorganic insulating layer, 166A upper surface, 167 moisture blocking structure, 168 resist, 171 st sensor electrode, 172 insulating layer, 173 nd sensor electrode, 181 anisotropic conductive film, 195 adhesive layer, 200 substrate, 204 peripheral portion.
Claims (18)
1. A display device, comprising:
a 1 st region which is provided with a plurality of pixels and includes an organic insulating layer, a 1 st inorganic insulating layer, and a 2 nd inorganic insulating layer; and
a 2 nd region including the organic insulating layer, the 1 st inorganic insulating layer, and the 2 nd inorganic insulating layer continuously formed from the 1 st region, respectively,
the 2 nd region further comprises: a 1 st groove portion provided in the organic insulating layer; and a protective film disposed in contact with the upper surface of the 2 nd inorganic insulating layer,
the 1 st inorganic insulating layer and the 2 nd inorganic insulating layer cover the side face, upper end portion and bottom face of the 1 st groove portion,
the protective film overlaps at least a portion of an upper surface of the organic insulating layer included in the 2 nd region, an upper end portion of the 1 st groove portion, and at least a portion of a side surface of the 1 st groove portion,
the ratio of the depth of the 1 st groove portion to the width of the bottom surface of the 1 st groove portion is 1 or less.
2. The display device according to claim 1, wherein:
the 2 nd region further includes a 2 nd groove portion provided in the organic insulating layer, and a ratio of a width of the bottom surface to a distance between upper end portions of the 1 st groove portion and the 2 nd groove portion adjacent to each other is 2 or less.
3. The display device according to claim 1, wherein:
the 2 nd region further includes a 2 nd groove portion provided in the organic insulating layer, and a distance between upper end portions of the 1 st groove portion and the 2 nd groove portion adjacent to each other is 10 μm or less.
4. A display device according to any one of claims 1 to 3, wherein:
the width of the bottom surface of the 1 st groove is 5-30 μm.
5. A display device according to any one of claims 1 to 3, wherein:
the protective film contains an inorganic material.
6. The display device according to claim 5, wherein:
the inorganic material is boron nitride.
7. A display device according to any one of claims 1 to 3, wherein:
the 1 st inorganic insulating layer and the 2 nd inorganic insulating layer are silicon nitride layers.
8. A display device according to any one of claims 1 to 3, wherein:
the film thickness of the protective film is 100nm or less.
9. A display device according to any one of claims 1 to 3, wherein:
the pixel includes an organic EL element.
10. A method of manufacturing a display device, comprising:
a step of forming an organic insulating layer outside the display region so as to have a 1 st groove portion;
A step of forming a 1 st inorganic insulating layer so as to cover an upper surface of the organic insulating layer and side surfaces, upper end portions, and bottom surfaces of the 1 st groove portion;
a step of forming a 2 nd inorganic insulating layer on the 1 st inorganic insulating layer; and
a step of forming a protective film on the 2 nd inorganic insulating layer so as to overlap at least a part of the upper surface of the organic insulating layer, the upper end portion of the 1 st groove portion, and at least a part of the side surface of the 1 st groove portion,
the ratio of the depth of the 1 st groove portion to the width of the bottom surface of the 1 st groove portion is 1 or less.
11. The method of manufacturing a display device according to claim 10, wherein:
comprising a step of forming the organic insulating layer to further have a 2 nd groove portion,
the ratio of the width of the bottom surface to the distance between the upper ends of the 1 st groove portion and the 2 nd groove portion adjacent to each other is 2 or less.
12. The method of manufacturing a display device according to claim 10, wherein:
comprising a step of forming the organic insulating layer to further have a 2 nd groove portion,
the distance between the upper ends of the 1 st groove and the 2 nd groove adjacent to each other is 10 [ mu ] m or less.
13. The method for manufacturing a display device according to any one of claims 10 to 12, wherein:
the width of the bottom surface of the 1 st groove is 5-30 μm.
14. The method for manufacturing a display device according to any one of claims 10 to 12, wherein:
the protective film contains an inorganic material.
15. The method of manufacturing a display device according to claim 14, wherein:
the inorganic material is boron nitride.
16. The method for manufacturing a display device according to any one of claims 10 to 12, wherein:
the 1 st inorganic insulating layer and the 2 nd inorganic insulating layer are silicon nitride layers.
17. The method for manufacturing a display device according to any one of claims 10 to 12, wherein:
the film thickness of the protective film is 100nm or less.
18. The method for manufacturing a display device according to any one of claims 10 to 12, wherein:
the protective film is formed by dry etching.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-007216 | 2018-01-19 | ||
| JP2018007216A JP2019125551A (en) | 2018-01-19 | 2018-01-19 | Display device and manufacturing method of display device |
| PCT/JP2018/040326 WO2019142438A1 (en) | 2018-01-19 | 2018-10-30 | Display device and method for producing display device |
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| CN111602466A CN111602466A (en) | 2020-08-28 |
| CN111602466B true CN111602466B (en) | 2023-05-30 |
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| JP7395302B2 (en) * | 2019-09-30 | 2023-12-11 | 株式会社ジャパンディスプレイ | display device |
| US11417861B2 (en) | 2020-02-18 | 2022-08-16 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Flexible display panel and preparation method thereof |
| CN111146266B (en) * | 2020-02-18 | 2021-09-03 | 武汉华星光电半导体显示技术有限公司 | Flexible display panel and preparation method thereof |
| CN116848571A (en) * | 2021-02-12 | 2023-10-03 | 株式会社日本显示器 | Display device |
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| KR102378360B1 (en) * | 2015-05-12 | 2022-03-25 | 삼성디스플레이 주식회사 | Organic light-emitting display |
| KR102591636B1 (en) * | 2016-03-24 | 2023-10-20 | 삼성디스플레이 주식회사 | Organic light-emitting display apparatus |
| JP6715105B2 (en) * | 2016-06-29 | 2020-07-01 | 株式会社ジャパンディスプレイ | Display device |
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- 2018-01-19 JP JP2018007216A patent/JP2019125551A/en active Pending
- 2018-10-30 WO PCT/JP2018/040326 patent/WO2019142438A1/en active Application Filing
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| JP2004335267A (en) * | 2003-05-08 | 2004-11-25 | Sanyo Electric Co Ltd | Organic el display |
| CN101930992A (en) * | 2009-06-23 | 2010-12-29 | 佳能株式会社 | Display apparatus |
| JP2012150901A (en) * | 2011-01-17 | 2012-08-09 | Sony Corp | Organic el display device and electronic apparatus |
| JP2012134173A (en) * | 2012-03-09 | 2012-07-12 | Sony Corp | Display device and manufacturing method thereof |
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| WO2019142438A1 (en) | 2019-07-25 |
| JP2019125551A (en) | 2019-07-25 |
| CN111602466A (en) | 2020-08-28 |
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