CN111599890A - High-speed photoelectric detector based on gallium oxide/molybdenum disulfide two-dimensional heterojunction - Google Patents
High-speed photoelectric detector based on gallium oxide/molybdenum disulfide two-dimensional heterojunction Download PDFInfo
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- 229910052982 molybdenum disulfide Inorganic materials 0.000 title claims abstract description 93
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 91
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- 229910052710 silicon Inorganic materials 0.000 claims description 10
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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Abstract
The invention discloses a high-speed photoelectric detector based on a gallium oxide/molybdenum disulfide two-dimensional heterojunction, and belongs to the technical field of semiconductor devices. The device comprises a substrate, an insulating oxide layer, a gallium oxide layer and a molybdenum disulfide layer which are arranged from bottom to top, wherein two electrodes which are separated from each other are arranged on the molybdenum disulfide layer; and a two-dimensional heterojunction is formed between the gallium oxide layer and the molybdenum disulfide layer. The invention adopts a gallium oxide/molybdenum disulfide two-dimensional heterojunction structure, has the advantages of gallium oxide and molybdenum disulfide, and can improve carrier separation and transportation, so that the photoelectric detector has faster rising response time and falling response time.
Description
Technical Field
The invention belongs to the technical field of semiconductor devices, and particularly relates to a high-speed photoelectric detector based on a gallium oxide/molybdenum disulfide two-dimensional heterojunction.
Background
The photodetector is a device capable of converting an optical signal into an electrical signal, and supports the development of the field of photoelectric information. The gallium oxide is used as a direct band gap wide band gap semiconductor material, the forbidden band width of the gallium oxide is 4.2eV-4.9eV, the forbidden band width is exactly corresponding to the ultraviolet spectrum frequency band, and the gallium oxide is a natural material which can be used for solar blind ultraviolet detection. According to the existing research, the beta-gallium oxide with the two-dimensional structure has wider band gap, higher carrier mobility and larger absorption coefficient than the beta-gallium oxide with the three-dimensional structure, and is a material with huge potential in the field of high-speed optical detection. The molybdenum disulfide is a two-dimensional material with adjustable band gap, the band gap width is 1.2eV-1.9eV, and the molybdenum disulfide has excellent photoelectric performance. The existing gallium oxide detector also has the defects of low responsivity, low response speed and the like, and restricts the application of gallium oxide in the field of photoelectric detection.
Disclosure of Invention
The invention aims to provide a photoelectric detector based on a gallium oxide/molybdenum disulfide two-dimensional heterojunction aiming at the defects and shortcomings of the method, the photoelectric detector is provided by utilizing the advantages that two-dimensional beta-gallium oxide has large carrier mobility coefficient and high deep ultraviolet absorption coefficient, molybdenum disulfide has the advantages of adjustable energy level, high carrier mobility coefficient and wide band absorption, a two-dimensional heterojunction is formed between molybdenum disulfide and two-dimensional gallium oxide, and the two-dimensional beta-gallium oxide/molybdenum disulfide heterojunction structure can realize rapid detection of ultraviolet bands.
The invention aims to provide a high-speed photoelectric detector based on a gallium oxide/molybdenum disulfide two-dimensional heterojunction, which comprises a substrate, an insulating oxide layer, a gallium oxide layer and a molybdenum disulfide layer which are arranged from bottom to top, wherein the molybdenum disulfide layer is provided with two electrodes which are separated from each other; a two-dimensional heterojunction is formed between the gallium oxide layer and the molybdenum disulfide layer; the gallium oxide layer is beta-gallium oxide with a two-dimensional structure.
More preferably, the gallium oxide layer is obtained by oxidizing gallium selenide transferred on the insulating oxide layer.
Preferably, the molybdenum disulfide layer is vertically adsorbed on the gallium oxide layer (3) to form a two-dimensional heterojunction with a vertical structure.
More preferably, the molybdenum disulfide layer is obtained by first obtaining two-dimensional molybdenum disulfide through mechanical stripping or chemical vapor deposition, and then transferring the two-dimensional molybdenum disulfide onto the gallium oxide layer through a self-aligned transfer method.
Preferably, the electrode is a cadmium carbide electrode with the thickness of 200nm deposited on the molybdenum disulfide layer through a mask.
Preferably, the oxide layer is silicon dioxide and has a thickness of 200 nm.
Preferably, the substrate is a P-type silicon substrate or a monocrystalline silicon substrate.
Compared with the prior art, the invention has the following beneficial effects:
(1) the invention adopts the beta-gallium oxide with the two-dimensional structure, and the carrier mobility and the absorption coefficient of the beta-gallium oxide are higher than those of the beta-gallium oxide with the traditional three-dimensional structure, so that the photoelectric detector has faster rising response time and falling response time.
(2) The invention adopts a gallium oxide/molybdenum disulfide two-dimensional heterojunction structure, has the advantages of gallium oxide and molybdenum disulfide, has a detection spectrum comprising an ultraviolet frequency band and a visible light frequency band, and has a wide detection range.
Drawings
Fig. 1 is a schematic structural diagram of a photodetector based on a gallium oxide/molybdenum disulfide two-dimensional heterojunction according to an embodiment.
Fig. 2 is a time response curve of the gallium oxide/molybdenum disulfide two-dimensional heterojunction-based photodetector provided in example 1 under a 248nm unbiased pulsed laser.
Fig. 3 is a time response curve of the gallium oxide/molybdenum disulfide two-dimensional heterojunction-based photodetector provided in example 2 under a 248nm unbiased pulsed laser.
Fig. 4 is a time response curve of a gallium oxide-based photodetector provided in comparative example 1 under a 248nm unbiased pulsed laser.
Detailed Description
In order to make the technical solutions of the present invention better understood and implemented by those skilled in the art, the present invention is further described below with reference to the following specific embodiments and the accompanying drawings, but the embodiments are not meant to limit the present invention.
Referring to fig. 1, the structure of the photodetector provided by the present invention will be further described. The invention relates to a photoelectric detector based on a gallium oxide/molybdenum disulfide two-dimensional heterojunction, which comprises a substrate 1, an insulating oxide layer 2, a gallium oxide layer 3 and a molybdenum disulfide layer 4 which are arranged from bottom to top, wherein two electrodes 5 which are separated from each other are arranged on the molybdenum disulfide layer 4; a two-dimensional heterojunction is formed between the gallium oxide layer 3 and the molybdenum disulfide layer 4.
The embodiment of the invention is that the molybdenum disulfide layer is prepared by a mechanical stripping method and a chemical vapor deposition method; the two-dimensional gallium oxide layer is prepared by reacting two-dimensional gallium selenide with oxygen.
Example 1
A photoelectric detector based on a gallium oxide/molybdenum disulfide two-dimensional heterojunction is shown in figure 1 and comprises a P-type silicon substrate 1, a silicon dioxide layer 2 with the thickness of 200nm, a beta-gallium oxide layer 3 with a two-dimensional structure and a molybdenum disulfide layer 4 which are arranged from bottom to top, wherein two cadmium carbide electrodes 5 which are separated from each other are arranged on the molybdenum disulfide layer 4; the molybdenum disulfide layer 4 is vertically adsorbed on the beta-gallium oxide layer 3, and a two-dimensional heterojunction is formed between the beta-gallium oxide layer 3 and the molybdenum disulfide layer 4; wherein, the beta-gallium oxide layer 3 with the two-dimensional structure is obtained by oxidizing gallium selenide transferred on the silicon dioxide layer 2, and the electrode 5 is deposited with a cadmium carbide electrode with the thickness of 200nm on the molybdenum disulfide layer through a mask.
The photoelectric detector based on the gallium oxide/molybdenum disulfide two-dimensional heterojunction is prepared by the following steps:
Selecting a p-type silicon substrate containing a silicon dioxide layer with the thickness of 200 nm; and cleaning the substrate by using acetone, absolute ethyl alcohol and deionized water in sequence, repeating the cleaning process for 3 times, and air-drying to obtain the clean substrate.
Stripping the lower layered gallium selenide from the gallium selenide crystal by adopting a mechanical stripping method; performing four-time tearing, transferring the obtained gallium selenide onto the silicon dioxide layer, and vertically applying a certain force to the substrate during the transferring period, and simultaneously heating to 100 ℃ for 1 minute; then cooling to room temperature; to obtain the two-dimensional gallium selenide.
And (3) placing the transferred substrate in air, heating and keeping the constant temperature of 560 ℃, and obtaining the beta-gallium oxide layer 3 with the two-dimensional structure on the silicon dioxide after 5 hours.
And 3, cleaning the surface of the gallium oxide by using acetone, cleaning by using deionized water, repeating for 5 times, and then airing in a wind cabinet.
Stripping the two-dimensional molybdenum disulfide layer: and stripping the layered molybdenum disulfide from the molybdenum disulfide blocky crystal by adopting a mechanical stripping method. The specific implementation method comprises the following steps: and (3) sticking a thin molybdenum disulfide layer from the molybdenum disulfide blocky crystal through an adhesive tape, and obtaining the two-dimensional molybdenum disulfide layer through butt tearing (the number of the butt tearing is 5-10).
Transferring a two-dimensional molybdenum disulfide thin layer onto a gallium oxide substrate: stripping the molybdenum disulfide on the adhesive tape onto the PDMS; aligning molybdenum disulfide to a gallium oxide thin layer on a silicon substrate under a microscope, and slowly attaching the molybdenum disulfide to the gallium oxide; heating at 130 deg.C for 10 + -3 min (the heating temperature is set according to the selected PDMS adhesive tape); and finally, slowly removing the PDMS adhesive tape to obtain the two-dimensional heterojunction of the two-dimensional molybdenum disulfide/two-dimensional gallium oxide.
And depositing a cadmium carbide electrode 5 with the thickness of 200nm on the molybdenum disulfide layer through a mask.
Example 2
A high-speed photoelectric detector based on gallium oxide/molybdenum disulfide two-dimensional heterojunction is shown in figure 1 and comprises a P-type silicon substrate 1, a silicon dioxide layer 2 with the thickness of 200nm, a beta-gallium oxide layer 3 with a two-dimensional structure and a molybdenum disulfide layer 4 which are arranged from bottom to top, wherein two cadmium carbide electrodes 5 which are separated from each other are arranged on the molybdenum disulfide layer 4; the molybdenum disulfide layer 4 is vertically adsorbed on the beta-gallium oxide layer 3, and a two-dimensional heterojunction is formed between the beta-gallium oxide layer 3 and the molybdenum disulfide layer 4; wherein, the beta-gallium oxide layer 3 with the two-dimensional structure is obtained by oxidizing gallium selenide transferred on the silicon dioxide layer 2, and the electrode 5 is deposited with a cadmium carbide electrode with the thickness of 200nm on the substrate through a mask.
The high-speed photoelectric detector based on the gallium oxide/molybdenum disulfide two-dimensional heterojunction is prepared by the following steps:
Preparing a monocrystalline silicon substrate with a proper size; and sequentially washing the substrate by using acetone, absolute ethyl alcohol and deionized water, repeating for 3 times, and air-drying to obtain a layer of silicon dioxide film with the thickness of 200nm deposited on the clean substrate monocrystalline silicon substrate.
Stripping the lower layered gallium selenide from the gallium selenide crystal by adopting a mechanical stripping method; performing four-time tearing, transferring the obtained gallium selenide onto the silicon dioxide layer, and vertically applying a certain force to the substrate during the transferring period, and simultaneously heating to 100 ℃ for 1 minute; then cooling to room temperature; to obtain the two-dimensional gallium selenide.
And (3) placing the transferred substrate in air, heating and keeping the constant temperature of 560 ℃, and obtaining the beta-gallium oxide layer 3 with the two-dimensional structure on the silicon dioxide after 5 hours.
And 3, cleaning the surface of the gallium oxide by using acetone, cleaning by using deionized water, repeating the cleaning for 5 times, and then air-drying in a fume hood.
Preparing a molybdenum disulfide layer: the CVD method is adopted to prepare the two-dimensional molybdenum disulfide, and the specific method is as follows: placing the silicon wafer on a quartz boat containing molybdenum oxide powder (in order to obtain a high-quality molybdenum disulfide film, a silicon wafer can be placed on the silicon wafer to form a limited growth space in the vertical direction), respectively placing the quartz boat containing the sulfur powder and the molybdenum oxide in two temperature regions of a tube furnace, introducing nitrogen to exhaust air in a reaction chamber, heating the reaction chamber to 200 ℃, keeping the temperature for 10min, heating to 750 ℃, keeping the temperature for 10min, and then cooling to room temperature to obtain the two-dimensional molybdenum disulfide growing on the silicon wafer.
Transferring a two-dimensional molybdenum disulfide thin layer onto a gallium oxide substrate: two-dimensional molybdenum disulfide is transferred onto a gallium oxide substrate by a PMMA-assisted process. The method comprises the following specific steps: coating a PMMA solution on a substrate with one side of molybdenum disulfide, heating and curing PMMA, and removing the substrate; transferring PMMA/molybdenum disulfide onto a substrate with two-dimensional gallium oxide (molybdenum disulfide is vertically aligned with gallium oxide); and removing the solidified PMMA to obtain the vertical heterojunction of the two-dimensional molybdenum disulfide/two-dimensional gallium oxide.
A cadmium carbide electrode 5 with a thickness of 200nm was deposited on the molybdenum disulfide layer by means of a mask.
Comparative example 1
Same as example 1, except that: the molybdenum disulfide layer 4 is not arranged on the beta-gallium oxide layer 3 with the two-dimensional structure, and two cadmium carbide electrodes 5 which are separated from each other are directly arranged on the beta-gallium oxide layer 3 with the two-dimensional structure; that is, the comparative example provides a gallium oxide-based photodetector.
The preparation method of the gallium oxide-based photodetector is the same as that of the embodiment 1, except that: does not contain a layer for preparing molybdenum disulfide.
In order to illustrate the effects of the present invention, the performance of the photodetectors of the gallium oxide/molybdenum disulfide two-dimensional heterojunction provided in examples 1-2 and comparative example 1 was tested, and is shown in fig. 2-4.
FIG. 2 is a time response curve of a photodetector of a gallium oxide/molybdenum disulfide two-dimensional heterojunction provided in example 1 under 248nm unbiased pulsed laser;
FIG. 3 is a time response curve of a photodetector of a gallium oxide/molybdenum disulfide two-dimensional heterojunction provided in example 2 under 248nm unbiased pulsed laser;
FIG. 4 is a time response curve of a gallium oxide-based photodetector provided in comparative example 1 under a 248nm unbiased pulsed laser;
as can be seen from FIGS. 2 to 4, examples 1 to 2 have faster rise response time and fall response time than the photodetector provided in comparative example 1. Mainly, the embodiment 1-2 has the advantages of gallium oxide and molybdenum disulfide, and the beta-gallium oxide and the molybdenum disulfide form a two-dimensional heterojunction based on a two-dimensional structure, so that carrier separation and transportation can be effectively improved, and the photoelectric detector has faster rising response time and falling response time.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, it is intended that such changes and modifications be included within the scope of the appended claims and their equivalents.
Claims (7)
1. A high-speed photoelectric detector based on a gallium oxide/molybdenum disulfide two-dimensional heterojunction is characterized in that,
comprises a substrate (1), an insulating oxide layer (2), a gallium oxide layer (3) and a molybdenum disulfide layer (4) which are arranged from bottom to top;
two electrodes (5) which are separated from each other are arranged on the molybdenum disulfide layer (4);
a two-dimensional heterojunction is formed between the gallium oxide layer (3) and the molybdenum disulfide layer (4);
the gallium oxide layer (3) is beta-gallium oxide with a two-dimensional structure.
2. A high-speed photodetector based on a gallium oxide/molybdenum disulfide two-dimensional heterojunction as claimed in claim 1, characterized in that said gallium oxide layer (3) is obtained by oxidation of gallium selenide transferred on said insulating oxide layer (2).
3. A high-speed photodetector based on gallium oxide/molybdenum disulfide two-dimensional heterojunction as claimed in claim 1, characterized in that said molybdenum disulfide layer (4) is adsorbed perpendicularly on said gallium oxide layer (3) forming a two-dimensional heterojunction of vertical structure.
4. The high-speed photoelectric detector based on the gallium oxide/molybdenum disulfide two-dimensional heterojunction as claimed in claim 3, wherein the molybdenum disulfide layer (4) is obtained by obtaining two-dimensional molybdenum disulfide through mechanical stripping or chemical vapor deposition and then transferring the two-dimensional molybdenum disulfide onto the gallium oxide layer (3) through a self-aligned transfer method.
5. A high-speed photodetector based on a gallium oxide/molybdenum disulfide two-dimensional heterojunction as claimed in claim 1, characterized in that said electrode (5) is formed by depositing a cadmium carbide electrode with a thickness of 200nm on the molybdenum disulfide layer by means of a mask.
6. A high-speed photodetector based on a gallium oxide/molybdenum disulfide two-dimensional heterojunction as claimed in claim 1, characterized in that said insulating oxide layer (2) is silicon dioxide with a thickness of 200 nm.
7. A high-speed photodetector based on a gallium oxide/molybdenum disulfide two-dimensional heterojunction as claimed in claim 1, characterized in that said substrate (1) is a P-type silicon substrate or a monocrystalline silicon substrate.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112186051A (en) * | 2020-10-14 | 2021-01-05 | 冯云龙 | F-beta-Ga2O3/CuGaO2Ultraviolet photoelectric detector and preparation method thereof |
| CN112768566A (en) * | 2021-02-01 | 2021-05-07 | 上海理工大学 | Photocell preparation method based on molybdenum disulfide as carrier |
| WO2022141432A1 (en) * | 2020-12-30 | 2022-07-07 | Tcl华星光电技术有限公司 | Photosensitive element and preparation method therefor, and display device |
| CN115172511A (en) * | 2022-07-18 | 2022-10-11 | 西安电子科技大学 | Gallium oxide solar blind ultraviolet detector with graphene and polar J-TMD insertion layer and preparation method thereof |
| CN116314424A (en) * | 2022-12-21 | 2023-06-23 | 深圳大学 | Multiband ultraviolet photoelectric detector and preparation method thereof |
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| CN112186051A (en) * | 2020-10-14 | 2021-01-05 | 冯云龙 | F-beta-Ga2O3/CuGaO2Ultraviolet photoelectric detector and preparation method thereof |
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| US11894479B2 (en) | 2020-12-30 | 2024-02-06 | Tcl China Star Optoelectronics Technology Co., Ltd. | Photosensitive element, and preparation method and display device thereof |
| CN112768566A (en) * | 2021-02-01 | 2021-05-07 | 上海理工大学 | Photocell preparation method based on molybdenum disulfide as carrier |
| CN115172511A (en) * | 2022-07-18 | 2022-10-11 | 西安电子科技大学 | Gallium oxide solar blind ultraviolet detector with graphene and polar J-TMD insertion layer and preparation method thereof |
| CN116314424A (en) * | 2022-12-21 | 2023-06-23 | 深圳大学 | Multiband ultraviolet photoelectric detector and preparation method thereof |
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