CN111584696A - LED chip CSP packaging structure with double-side light emitting and packaging method thereof - Google Patents
LED chip CSP packaging structure with double-side light emitting and packaging method thereof Download PDFInfo
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- CN111584696A CN111584696A CN201910124306.0A CN201910124306A CN111584696A CN 111584696 A CN111584696 A CN 111584696A CN 201910124306 A CN201910124306 A CN 201910124306A CN 111584696 A CN111584696 A CN 111584696A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Abstract
The invention provides a double-side light-emitting LED chip CSP packaging structure and a packaging method thereof, wherein double-side light emitting is realized by utilizing a first fluorescent layer, a second fluorescent layer and a transparent substrate, and an annular groove is formed at the edge position of the substrate to reduce the pressure at the edge position, so that the purpose of preventing warping is realized; in addition, the sandwich structure of the thermal expansion coefficients of the double-sided fluorescent layer and the plastic packaging layer is utilized, so that the stress and the stripping risk are reduced.
Description
Background
Most of the existing LED chip packages are COB structures, and plastic package materials can expand or contract along with temperature changes in the preparation process, so that the warping of the package structures is caused, the sealing performance of the packages is affected, and the peeling of the plastic package materials can be possibly caused. Referring to fig. 3, it is typical COB packaging structure, has base plate 1, is provided with circuit structure on base plate 1, 2 flip-chip of LED chip or wire bonding in on the base plate 1, the plastic envelope layer 3 plastic envelope LED chip 2, no matter flip-chip or wire bonding, the route is shorter in the steam machine between plastic envelope layer 3 and base plate 1 interface, and LED chip 2 very easily produces a large amount of heats, leads to the both ends of base plate 1 to take place the warpage to lead to plastic envelope layer 3 to peel off from base plate 1, and steam very easily enters and leads to the unreliable of encapsulation to increase.
Disclosure of Invention
Based on the solution of the above problem, the present invention provides a method for packaging a CSP of an LED chip with double-sided light emission, comprising:
(1) providing a substrate, wherein the substrate is a transparent substrate, and at least two annular grooves are formed in the edge area of the substrate;
(2) forming a through hole at the bottom of the annular groove on the inner side of the at least two annular grooves, wherein the through hole penetrates through the substrate;
(3) fixing an LED chip in a middle area of the substrate, wherein the middle area is surrounded by the at least two annular grooves;
(4) filling a conductive material in the through hole to form a conductive hole, wherein the conductive material at least protrudes into the annular groove on the inner side;
(5) welding a bonding lead to electrically connect the LED chip to one end of the conductive hole;
(6) forming a plastic packaging layer, wherein the plastic packaging layer is provided with a recess, the recess exposes out of the upper surface of the LED chip, and the plastic packaging layer is higher than the LED chip;
(7) forming a first fluorescent layer on the plastic packaging layer, wherein the fluorescent layer covers the plastic packaging layer and the upper surface;
(8) and forming a solder ball at the other end of the conductive hole, and forming a second fluorescent layer surrounding the solder ball on the bottom surface of the substrate.
According to an embodiment of the present invention, the first and second phosphor layers are made of the same material and have a Coefficient of Thermal Expansion (CTE) greater than that of the molding layer.
According to the embodiment of the invention, the step (6) specifically comprises the following steps: placing a structure to be subjected to plastic packaging in a plastic packaging mold, wherein the mold comprises an upper mold and a lower mold, the lower mold is provided with a release film, and the structure to be packaged is placed on the release film; the upper die is provided with a truncated cone-shaped protrusion, the protrusion is pressed against the upper surface of the LED chip, and resin materials are injected and cured and then dissociated.
Preferably, the present invention further provides another method for packaging a CSP of an LED chip with two-sided light emission, which includes:
(1) providing a substrate, wherein the substrate is a transparent substrate, and at least two annular grooves are formed in the edge area of the substrate;
(2) forming a through hole at the bottom of the annular groove on the inner side of the at least two annular grooves, wherein the through hole penetrates through the substrate;
(3) filling a conductive material in the through hole to form a conductive hole, wherein the conductive material at least protrudes out of the annular groove on the inner side, and a solder ball is formed on the bottom surface of the substrate and connected to one end of the conductive hole;
(4) fixing an LED chip in a middle area of the substrate, wherein the middle area is surrounded by the at least two annular grooves;
(5) welding a bonding lead to electrically connect the LED chip to the other end of the conductive hole;
(6) forming a plastic packaging layer, wherein the plastic packaging layer is provided with a recess, the recess exposes out of the upper surface of the LED chip, and the plastic packaging layer is higher than the LED chip;
(7) forming a first fluorescent layer on the plastic packaging layer, wherein the fluorescent layer covers the plastic packaging layer and the upper surface;
(8) and forming a second fluorescent layer surrounding the solder balls on the bottom surface of the substrate.
According to an embodiment of the present invention, the first and the second phosphor layers are made of the same material, and have a Coefficient of Thermal Expansion (CTE) greater than that of the molding layer.
According to the embodiment of the invention, the step (6) specifically comprises the following steps: placing a structure to be subjected to plastic packaging in a plastic packaging mold, wherein the mold comprises an upper mold and a lower mold, the lower mold is provided with a flexible layer, and the structure to be packaged is placed on the flexible layer so that the solder balls are embedded in the flexible layer; the upper die is provided with a truncated cone-shaped protrusion, the protrusion is pressed against the upper surface of the LED chip, and resin materials are injected and cured and then dissociated.
By the method, the invention also provides a double-side light-emitting LED chip CSP packaging structure, which comprises the following steps:
the substrate is a transparent substrate, and the edge area of the substrate is provided with at least two annular grooves;
the conductive hole is formed at the bottom of the annular groove on the inner side of the at least two annular grooves and penetrates through the substrate;
a solder ball connected to one end of the conductive hole
The LED chip is fixed in the middle area of the substrate, and the middle area is surrounded by the at least two annular grooves;
a bonding wire electrically connecting the LED chip to the other end of the conductive hole;
the plastic packaging layer is provided with a recess, the recess exposes out of the upper surface of the LED chip, and the plastic packaging layer is higher than the LED chip;
a first fluorescent layer covering the plastic package layer and the upper surface;
and the second fluorescent layer is formed on the bottom surface of the substrate and wraps a part of the solder balls.
According to an embodiment of the present invention, the substrate is a flexible substrate including a polyester-based film, a polyimide film, and the like.
According to the embodiment of the invention, the substrate is transparent glass, and fluorescent powder is dispersed in the transparent glass.
According to an embodiment of the present invention, the first and second phosphor layers comprise epoxy or silicone.
According to the invention, double-sided light emitting is realized by utilizing the first fluorescent layer, the second fluorescent layer and the transparent substrate, the annular groove is formed at the edge position of the substrate, and the pressure at the edge position is reduced, so that the purpose of preventing warping is realized, meanwhile, the path distance of water vapor entering is increased by the annular groove, and the oxidation of a welding wire and the instability of packaging are prevented; in addition, the sandwich structure of the thermal expansion coefficients of the double-sided fluorescent layer and the plastic packaging layer is utilized, so that the stress and the stripping risk are reduced.
Drawings
FIG. 1 is a schematic diagram of a double-sided light-emitting LED chip CSP packaging method according to the present invention;
fig. 2 is a schematic diagram of a CSP packaging method of a double-sided light-emitting LED chip according to another embodiment of the present invention;
fig. 3 is a schematic view of a conventional COB package structure.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Referring to fig. 1, the invention provides a method for packaging a CSP (chip size package) of a double-sided light-emitting LED chip, based on overcoming thermal warpage and stress and protecting a package structure from moisture, comprising:
referring to fig. 1a, a substrate 11 is provided, and at least two annular grooves 12 are formed in an edge region of the substrate 11; in order to ensure double-sided light extraction, the substrate 11 is a transparent substrate, and optionally, the substrate 11 is a flexible substrate, and the flexible substrate includes a polyester film, a polyimide film, and the like. In addition, the substrate is transparent glass, and fluorescent powder is dispersed in the transparent glass. The glass substrate may be manufactured by a fluorescent glass sintering process.
Referring to fig. 1b, a through hole 13 is formed at the bottom of the annular groove at the inner side of the at least two annular grooves 12, and the through hole 13 penetrates through the substrate 11; the cross section of the groove 12 can be in a hemispherical shape, a square shape or a trapezoidal shape; the through hole 13 is formed by mechanical drilling or laser drilling.
Referring to fig. 1c, the LED chip 14 is fixed to the middle region of the substrate 11, which is surrounded by the at least two annular grooves 12; the substrate 11 may be fixed by adhesive glue, resin, or solder.
Referring to fig. 1d, the through hole 13 is filled with a conductive material to form a conductive hole 15, wherein the conductive material at least protrudes into the more inner annular groove 12 but is not filled, so that the wire can be protected during the subsequent wire bonding.
Referring to fig. 1e, a bonding wire 16 is soldered to electrically connect the LED chip 14 to one end of the conductive via 15.
Referring to fig. 1f, placing the structure to be subjected to plastic packaging in a plastic packaging mold, where the mold includes an upper mold 17 and a lower mold 19, where the lower mold 17 has a release film 18, and the structure to be packaged is placed on the release film 18; the upper mold 19 has a boss-shaped protrusion 20, and the protrusion 20 is pressed against the upper surface of the LED chip 14, and a resin material is injected and cured.
Referring to fig. 1g, the mold is dissociated and removed to form a molding layer 22, the molding layer 22 has a recess 23, the recess 23 exposes the upper surface of the LED chip 14, and the molding layer 23 is higher than the LED chip 14;
referring to fig. 1h, a first fluorescent layer 24 is formed on the molding layer 22, and the first fluorescent layer 24 covers the molding layer 23 and the upper surface;
referring to fig. 1i, a solder ball 26 is formed at the other end of the conductive via 15, and a second fluorescent layer 25 surrounding the solder ball is formed on the bottom surface of the substrate 11.
According to an embodiment of the present invention, the first and second phosphor layers 24, 25 are made of the same material and have a Coefficient of Thermal Expansion (CTE) greater than that of the molding layer 22. The first and second phosphor layers 24, 25 comprise epoxy or silicone
Preferably, referring to fig. 2, the present invention further provides another method for packaging a double-sided light-emitting LED chip CSP, which is the same as that in the previous embodiment and is not repeated herein, specifically including:
referring to fig. 2a, a substrate 11 is provided, wherein the substrate is a transparent substrate, and at least two annular grooves 12 are formed in an edge region of the substrate 11; forming a through hole 13 at the bottom of the annular groove on the inner side of the at least two annular grooves 12, wherein the through hole 13 penetrates through the substrate 11; filling a conductive material in the through hole 13 to form a conductive hole 15, wherein the conductive material at least protrudes into the more inner annular groove, and forming a solder ball 26 on the bottom surface of the substrate 11, wherein the solder ball 26 is connected to one end of the conductive hole 15; fixing the LED chip 14 to a middle region of the substrate 11, the middle region being surrounded by the at least two annular grooves 12; and a bonding wire 16 for electrically connecting the LED chip 14 to the other end of the conductive hole 15.
Referring to fig. 2b, placing a structure to be plastically packaged in a plastic packaging mold, where the mold includes an upper mold 17 and a lower mold 19, where the lower mold 17 has a flexible layer 21, and the structure to be packaged is placed on the flexible layer 21 so that the solder balls 26 are embedded in the flexible layer 21; the upper mold 19 has a boss-shaped protrusion 20, and the protrusion 20 is pressed against the upper surface of the LED chip 14, and a resin material is injected and cured.
Referring to fig. 2c, the plastic encapsulation layer 22 is formed by dissociation, the plastic encapsulation layer 22 has a recess 23, the recess 23 exposes the upper surface of the LED chip 14, and the plastic encapsulation layer 22 is higher than the LED chip 14;
referring to fig. 2d, a first fluorescent layer 24 is formed on the molding layer 22, and the first fluorescent layer 24 covers the molding layer 22 and the upper surface;
referring to fig. 2e, a second phosphor layer 25 surrounding the solder balls 26 is formed on the bottom surface of the substrate 11.
According to an embodiment of the present invention, the first and second phosphor layers 24, 25 are made of the same material and have a Coefficient of Thermal Expansion (CTE) greater than that of the molding layer 22. The first and second phosphor layers 24, 25 comprise epoxy or silicone
By the method, the invention also provides a double-side light-emitting LED chip CSP packaging structure, which comprises the following steps:
the substrate is a transparent substrate, and the edge area of the substrate is provided with at least two annular grooves;
the conductive hole is formed at the bottom of the annular groove on the inner side of the at least two annular grooves and penetrates through the substrate;
a solder ball connected to one end of the conductive hole
The LED chip is fixed in the middle area of the substrate, and the middle area is surrounded by the at least two annular grooves;
a bonding wire electrically connecting the LED chip to the other end of the conductive hole;
the plastic packaging layer is provided with a recess, the recess exposes out of the upper surface of the LED chip, and the plastic packaging layer is higher than the LED chip;
a first fluorescent layer covering the plastic package layer and the upper surface;
and the second fluorescent layer is formed on the bottom surface of the substrate and wraps a part of the solder balls.
According to an embodiment of the present invention, the first and second phosphor layers comprise epoxy or silicone.
According to the invention, double-sided light emitting is realized by utilizing the first fluorescent layer, the second fluorescent layer and the transparent substrate, the annular groove is formed at the edge position of the substrate, and the pressure at the edge position is reduced, so that the purpose of preventing warping is realized, meanwhile, the path distance of water vapor entering is increased by the annular groove, and the oxidation of a welding wire and the instability of packaging are prevented; in addition, the sandwich structure of the thermal expansion coefficients of the double-sided fluorescent layer and the plastic packaging layer is utilized, so that the stress and the stripping risk are reduced.
Finally, it should be noted that: it should be understood that the above examples are only for clearly illustrating the present invention and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of the invention may be made without departing from the scope of the invention.
Claims (10)
1. A CSP packaging method of an LED chip with double-sided light emitting comprises the following steps:
(1) providing a substrate, wherein the substrate is a transparent substrate, and at least two annular grooves are formed in the edge area of the substrate;
(2) forming a through hole at the bottom of the annular groove on the inner side of the at least two annular grooves, wherein the through hole penetrates through the substrate;
(3) fixing an LED chip in a middle area of the substrate, wherein the middle area is surrounded by the at least two annular grooves;
(4) filling a conductive material in the through hole to form a conductive hole, wherein the conductive material at least protrudes into the annular groove on the inner side;
(5) welding a bonding lead to electrically connect the LED chip to one end of the conductive hole;
(6) forming a plastic packaging layer, wherein the plastic packaging layer is provided with a recess, the recess exposes out of the upper surface of the LED chip, and the plastic packaging layer is higher than the LED chip;
(7) forming a first fluorescent layer on the plastic packaging layer, wherein the fluorescent layer covers the plastic packaging layer and the upper surface;
(8) and forming a solder ball at the other end of the conductive hole, and forming a second fluorescent layer surrounding the solder ball on the bottom surface of the substrate.
2. The method for packaging the LED chip CSP with double-sided light emission according to claim 1, wherein the method comprises the following steps: the first fluorescent layer and the second fluorescent layer are made of the same material, and the Coefficient of Thermal Expansion (CTE) of the first fluorescent layer and the second fluorescent layer is larger than that of the plastic packaging layer.
3. The method for packaging the LED chip CSP with double-sided light emission according to claim 1, wherein the method comprises the following steps: wherein the step (6) specifically comprises: placing a structure to be subjected to plastic packaging in a plastic packaging mold, wherein the mold comprises an upper mold and a lower mold, the lower mold is provided with a release film, and the structure to be packaged is placed on the release film; the upper die is provided with a truncated cone-shaped protrusion, the protrusion is pressed against the upper surface of the LED chip, and resin materials are injected and cured and then dissociated.
4. A CSP packaging method of an LED chip with double-sided light emitting comprises the following steps:
(1) providing a substrate, wherein the substrate is a transparent substrate, and at least two annular grooves are formed in the edge area of the substrate;
(2) forming a through hole at the bottom of the annular groove on the inner side of the at least two annular grooves, wherein the through hole penetrates through the substrate;
(3) filling a conductive material in the through hole to form a conductive hole, wherein the conductive material at least protrudes out of the annular groove on the inner side, and a solder ball is formed on the bottom surface of the substrate and connected to one end of the conductive hole;
(4) fixing an LED chip in a middle area of the substrate, wherein the middle area is surrounded by the at least two annular grooves;
(5) welding a bonding lead to electrically connect the LED chip to the other end of the conductive hole;
(6) forming a plastic packaging layer, wherein the plastic packaging layer is provided with a recess, the recess exposes out of the upper surface of the LED chip, and the plastic packaging layer is higher than the LED chip;
(7) forming a first fluorescent layer on the plastic packaging layer, wherein the fluorescent layer covers the plastic packaging layer and the upper surface;
(8) and forming a second fluorescent layer surrounding the solder balls on the bottom surface of the substrate.
5. The CSP packaging method of the LED chip with double-sided light emission according to claim 4, wherein: the first fluorescent layer and the second fluorescent layer are made of the same material, and the Coefficient of Thermal Expansion (CTE) of the first fluorescent layer and the second fluorescent layer is larger than that of the plastic packaging layer.
6. The CSP packaging method of the LED chip with double-sided light emission according to claim 4, wherein: wherein the step (6) specifically comprises: placing a structure to be subjected to plastic packaging in a plastic packaging mold, wherein the mold comprises an upper mold and a lower mold, the lower mold is provided with a flexible layer, and the structure to be packaged is placed on the flexible layer so that the solder balls are embedded in the flexible layer; the upper die is provided with a truncated cone-shaped protrusion, the protrusion is pressed against the upper surface of the LED chip, and resin materials are injected and cured and then dissociated.
7. A double-sided light-emitting LED chip CSP packaging structure comprises:
the substrate is a transparent substrate, and the edge area of the substrate is provided with at least two annular grooves;
the conductive hole is formed at the bottom of the annular groove on the inner side of the at least two annular grooves and penetrates through the substrate;
a solder ball connected to one end of the conductive hole
The LED chip is fixed in the middle area of the substrate, and the middle area is surrounded by the at least two annular grooves;
a bonding wire electrically connecting the LED chip to the other end of the conductive hole;
the plastic packaging layer is provided with a recess, the recess exposes out of the upper surface of the LED chip, and the plastic packaging layer is higher than the LED chip;
a first fluorescent layer covering the plastic package layer and the upper surface;
and the second fluorescent layer is formed on the bottom surface of the substrate and wraps a part of the solder balls.
8. The double-sided light-emitting LED chip CSP packaging structure of claim 7, wherein: the substrate is a flexible substrate, and the flexible substrate comprises a polyester film, a polyimide film and the like.
9. The double-sided light-emitting LED chip CSP packaging structure of claim 7, wherein: the substrate is transparent glass, and fluorescent powder is dispersed in the transparent glass.
10. The double-sided light-emitting LED chip CSP packaging structure of claim 7, wherein: the first and second phosphor layers include epoxy or silicone.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910124306.0A CN111584696A (en) | 2019-02-19 | 2019-02-19 | LED chip CSP packaging structure with double-side light emitting and packaging method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910124306.0A CN111584696A (en) | 2019-02-19 | 2019-02-19 | LED chip CSP packaging structure with double-side light emitting and packaging method thereof |
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| CN111584696A true CN111584696A (en) | 2020-08-25 |
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Citations (7)
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| JP2001148512A (en) * | 1999-11-18 | 2001-05-29 | Matsushita Electric Works Ltd | Illuminating light source |
| JP2001196640A (en) * | 2000-01-12 | 2001-07-19 | Sharp Corp | Side light emitting led device and its manufacturing method |
| JP2002094122A (en) * | 2000-07-13 | 2002-03-29 | Matsushita Electric Works Ltd | Light source and its manufacturing method |
| CN1436374A (en) * | 2001-04-12 | 2003-08-13 | 松下电工株式会社 | Light source device using LED, and method of producing same |
| CN108598070A (en) * | 2018-06-25 | 2018-09-28 | 江苏罗化新材料有限公司 | A kind of chip-scale LED encapsulation structure of dual chip and preparation method thereof |
| CN109003948A (en) * | 2018-07-23 | 2018-12-14 | 华进半导体封装先导技术研发中心有限公司 | The two-sided three-dimensional stacked encapsulating structure of one kind and packaging method |
| CN109671834A (en) * | 2018-12-25 | 2019-04-23 | 江苏罗化新材料有限公司 | A kind of the LED chip CSP encapsulating structure and its packaging method of two-sided light out |
-
2019
- 2019-02-19 CN CN201910124306.0A patent/CN111584696A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001148512A (en) * | 1999-11-18 | 2001-05-29 | Matsushita Electric Works Ltd | Illuminating light source |
| JP2001196640A (en) * | 2000-01-12 | 2001-07-19 | Sharp Corp | Side light emitting led device and its manufacturing method |
| JP2002094122A (en) * | 2000-07-13 | 2002-03-29 | Matsushita Electric Works Ltd | Light source and its manufacturing method |
| CN1436374A (en) * | 2001-04-12 | 2003-08-13 | 松下电工株式会社 | Light source device using LED, and method of producing same |
| CN108598070A (en) * | 2018-06-25 | 2018-09-28 | 江苏罗化新材料有限公司 | A kind of chip-scale LED encapsulation structure of dual chip and preparation method thereof |
| CN109003948A (en) * | 2018-07-23 | 2018-12-14 | 华进半导体封装先导技术研发中心有限公司 | The two-sided three-dimensional stacked encapsulating structure of one kind and packaging method |
| CN109671834A (en) * | 2018-12-25 | 2019-04-23 | 江苏罗化新材料有限公司 | A kind of the LED chip CSP encapsulating structure and its packaging method of two-sided light out |
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