CN111579957A - Total dose radiation test method, device and equipment for nano MOSFET device - Google Patents
Total dose radiation test method, device and equipment for nano MOSFET device Download PDFInfo
- Publication number
- CN111579957A CN111579957A CN202010299625.8A CN202010299625A CN111579957A CN 111579957 A CN111579957 A CN 111579957A CN 202010299625 A CN202010299625 A CN 202010299625A CN 111579957 A CN111579957 A CN 111579957A
- Authority
- CN
- China
- Prior art keywords
- total dose
- parameter
- test
- variation
- test point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/001—Measuring interference from external sources to, or emission from, the device under test, e.g. EMC, EMI, EMP or ESD testing
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
- G06F17/10—Complex mathematical operations
- G06F17/18—Complex mathematical operations for evaluating statistical data, e.g. average values, frequency distributions, probability functions, regression analysis
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Data Mining & Analysis (AREA)
- Mathematical Analysis (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Pure & Applied Mathematics (AREA)
- Mathematical Optimization (AREA)
- Computational Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Evolutionary Biology (AREA)
- Bioinformatics & Computational Biology (AREA)
- Operations Research (AREA)
- Probability & Statistics with Applications (AREA)
- Bioinformatics & Cheminformatics (AREA)
- Algebra (AREA)
- Electromagnetism (AREA)
- Databases & Information Systems (AREA)
- Software Systems (AREA)
- General Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Measurement Of Radiation (AREA)
Abstract
The application relates to a total dose radiation test method, a total dose radiation test device and total dose radiation test equipment for a nano MOSFET device. The total dose radiation test method of the nanometer MOSFET device comprises the following steps of carrying out total dose radiation test on a plurality of devices in the same batch of devices by a plurality of total dose test points to obtain test data of each device; processing each test data to obtain a parameter standard deviation and a parameter mean value of each total dose test point; obtaining the average number of defects of the single device gate oxide layer on each total dose test point according to the parameter standard deviation and the parameter mean value of each total dose test point; and determining the defect distribution condition of the devices in the same batch according to the Poisson distribution and the average number of each defect. Based on the method, the statistical distribution analysis of discrete data after radiation can be carried out on the nanometer MOSFET devices with the fluctuation effect, the average number of defects in the gate oxide layer of a single device is determined, the defect distribution condition in the gate oxide layer of the same batch of devices is finally determined, and effective data are provided for the total dose radiation evaluation and the examination of the same batch of devices.
Description
Technical Field
The application relates to the technical field of device testing, in particular to a total dose radiation testing method, a total dose radiation testing device and total dose radiation testing equipment for a nanometer MOSFET device.
Background
The spacecraft operates in a severe natural radiation environment, and particles such as high-energy protons, alpha particles, heavy ions and electrons in a trapping zone of a Galaxy cosmic ray, a solar cosmic ray and a geomagnetic field can cause radiation effects of an integrated circuit in the spacecraft, including cumulative radiation effects (total dose effect and displacement effect) and transient radiation effects (single event effect), and the radiation effects can cause performance degradation and even function failure of electronic components and integrated circuits, so that the spacecraft operates in a fault. As device feature sizes enter small nanometer scales (below 28nm (nanometers)), device sizes have been comparable to atomic sizes, quantum effects have begun to emerge, and traditional device feature descriptions based on sequential concepts (i.e., sequential ion doping and smooth boundaries, etc.) have no longer been applicable.
In the implementation process, the inventor finds that at least the following problems exist in the conventional technology: the more advanced the device manufacturing process, the smaller the process node, and the more serious the fluctuation problem. The presence of the fluctuation Effect presents a significant challenge to the characterization of the total dose radiation degradation of devices including advanced nano-MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) devices. The channel current can be obviously changed due to the charge and discharge of a single defect, and the noise generated by the charge and discharge of the intrinsic defect on the nanometer device is far larger than that of a large-size device, so that a large amount of noise after sampling averaging is coupled in the traditional test characterization result, the analysis cannot be carried out, and the result of each measurement of the same device is different.
Disclosure of Invention
Based on this, it is necessary to provide a total dose radiation test method, device and apparatus for nano MOSFET devices, aiming at the problem that the conventional test characterization means for large-size devices is no longer applicable to advanced nano devices.
In order to achieve the above object, in one aspect, an embodiment of the present application provides a total dose radiation testing method for a nano MOSFET device, including:
carrying out total dose radiation test on a plurality of devices to obtain test data of each device; each device belongs to the same batch of devices; the total dose radiation test procedure comprises a plurality of total dose test points; the test data comprises parameter variation of the device at each total dose test point;
acquiring the parameter standard deviation and the parameter mean value of each total dose test point according to the test data of each device; the parameter standard deviation is calculated based on the variable quantity of each parameter corresponding to the total dose test point; the parameter mean value is obtained by calculating the variable quantity of each parameter corresponding to the total dose test point;
obtaining the variation relation between the parameter standard deviation and the parameter average value based on the parameter standard deviation and the parameter average value of each total dose test point, and obtaining the average number of defects of the single device gate oxide layer on each total dose test point based on the variation relation;
and processing the average number of the defects on each total dose test point based on Poisson distribution, and determining the defect distribution condition of the devices in the same batch.
In one embodiment, the step of obtaining a variation relation between the parameter standard deviation and the parameter mean value based on the parameter standard deviation and the parameter mean value of each total dose test point, and obtaining the average number of defects of the single device gate oxide layer on each total dose test point based on the variation relation comprises:
performing curve fitting on the parameter standard deviation and the parameter mean value of each total dose test point, and determining a change relational expression of the parameter standard deviation and the parameter mean value;
determining the average variation of the total dose test points according to the variation relation; the average variation is the average value of parameter variation caused by single defect on the corresponding total dose test point;
and obtaining the average number of defects of the single device gate oxide layer on the total dose test point based on the ratio of the parameter average value of the total dose test point to the average variation.
In one embodiment, in the step of curve fitting the parameter standard deviation and the parameter mean value of each total dose test point and determining the variation relation between the parameter standard deviation and the parameter mean value:
the variation relation is as follows:
σi＝A×μi b
wherein σiParameter standard deviation, μ, representing total dose test pointsiRepresents the mean value of the parameters of the total dose test points, A represents a first constant, b represents a second constant;
in the step of determining the average amount of change of the total dose test points according to the change relation:
the average change in total dose test points was determined based on the following equation:
wherein, ηiMean change in total dose test points are expressed.
In one embodiment, the step of performing a total dose radiation test on a plurality of devices to obtain test data for each device comprises:
according to the total dose test point, performing parameter test on the device under a bias condition to obtain a characteristic curve;
and extracting the parameter variation from the characteristic curve.
In one embodiment, the characteristic comprises a transfer characteristic and/or an output characteristic;
the parameter variation includes radiation-induced threshold voltage increase, and/or radiation-induced maximum transconductance increase.
In one embodiment, the total dose test point comprises a start point, a middle point, and an end point.
In one embodiment, the number of intermediate points ranges from 3 to 5.
On the other hand, the embodiment of the present application further provides an apparatus, including:
the test module is used for carrying out total dose radiation test on a plurality of devices to obtain test data of each device; each device belongs to the same batch of devices; the total dose radiation test procedure comprises a plurality of total dose test points; the test data comprises parameter variation of the device at each total dose test point;
the test point data processing module is used for acquiring the parameter standard deviation and the parameter mean value of each total dosage test point according to the test data of each device; the parameter standard deviation is calculated based on the variable quantity of each parameter corresponding to the total dose test point; the parameter mean value is obtained by calculating the variable quantity of each parameter corresponding to the total dose test point;
the defect number obtaining module is used for obtaining the variation relation between the parameter standard deviation and the parameter mean value based on the parameter standard deviation and the parameter mean value of each total dose test point and obtaining the defect average number of the single device gate oxide layer on each total dose test point based on the variation relation;
and the defect distribution module is used for processing the average number of defects on each total dose test point based on Poisson distribution and determining the defect distribution condition of the devices in the same batch.
In one embodiment, a computer device is provided, comprising a memory, a processor and a computer program stored on the memory and executable on the processor, the processor implementing the total dose radiation testing method of the nano MOSFET device as described above when executing the computer program.
In one embodiment, a computer storage medium is provided, on which a computer program is stored, which when executed by a processor, implements a total dose radiation testing method for a nano MOSFET device as described above.
One of the above technical solutions has the following advantages and beneficial effects:
carrying out total dose radiation tests on a plurality of devices in the same batch of devices by using a plurality of total dose test points to obtain test data of each device; processing each test data to obtain a parameter standard deviation and a parameter mean value of each total dose test point; and obtaining the average number of the defects of the gate oxide layer of the single device on each total dose test point according to the parameter standard deviation and the parameter mean value of each total dose test point, and further determining the defect distribution condition of the devices in the same batch according to Poisson distribution and the average number of each defect. Based on the method, the statistical distribution analysis of discrete data after radiation can be carried out on the small nanometer MOSFET device with the fluctuation effect, the average number of defects in the gate oxide layer of a single device is determined, the defect distribution condition in the gate oxide layer of the same batch of devices is finally determined, effective data are provided for the total dose radiation evaluation and the evaluation of the same batch of devices, and the total dose radiation degradation rule can be more accurately determined so as to facilitate the evaluation, the evaluation and the radiation reinforcement of the same batch of devices.
Drawings
Other features, objects and advantages of the present application will become more apparent upon reading of the following detailed description of non-limiting embodiments thereof, made with reference to the accompanying drawings in which:
FIG. 1 is a graph of threshold voltage degradation under electrical stress as a function of stress time;
FIG. 2 is a first schematic flow chart diagram of a total dose radiation testing method for a nano MOSFET device in one embodiment;
FIG. 3 is a second schematic flow chart diagram of a total dose radiation testing method for a nano MOSFET device in one embodiment;
FIG. 4 is a schematic diagram of the structure of the apparatus in one embodiment;
FIG. 5 is a diagram illustrating an exemplary computer device.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are shown in the drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
As the size of the device decreases, the number of carriers participating in conduction in a single device channel decreases, the charging and discharging (trapping and releasing of carriers in the channel) of a single defect caused by total dose radiation causes drastic changes in the electrical parameters of the device, and the defects at different energy levels and positions have greatly different effects on the device parameters. As shown in fig. 1, N represents the average number of defects in the gate dielectric, and the thinner the gate dielectric, the smaller the number of defects in the gate dielectric in the device with smaller feature size; it can be seen that the smaller the device feature size, the more pronounced the fluctuation effect. The fluctuation effect has the following effects on the test characterization of the total dose radiation degradation of advanced nano MOSFET devices:
1) for a single device, the channel current can be obviously changed due to the charge and discharge of a single defect, and the noise generated on the nanometer device due to the charge and discharge of the inherent defect is far larger than that of a large-size device, so that a large amount of noise after sampling averaging is coupled in the traditional direct current slow measurement result, and the noise cannot be analyzed, and the measurement results of the same device are different.
2) Under the same stress condition, the degradation rules of the devices are completely different, and the statistical distribution of the total dose radiation degradation must be obtained by repeatedly testing a large number of devices. The traditional test characterization means aiming at large-size devices is not applicable to advanced nano devices.
The traditional technology has no corresponding industry specification or standard aiming at a processing method of total dose radiation degradation data of an advanced nanometer device with the characteristic size of below 28nm, the data is basically directly adopted, and the fluctuation effect of the data is not considered; the total dose radiation degradation data is directly used for analysis without considering the fluctuation effect, and the method has the following defects:
(1) due to the fluctuation effect, the degradation data of the device at a plurality of total dose points has discreteness, and a corresponding degradation rule is difficult to extract;
(2) the fluctuation effect causes great difference of total dose degradation data of different devices, and the analysis of the degradation rule of the devices is difficult.
Therefore, the method and the device can process the total dose radiation degradation data of the advanced nano MOSFET device with the characteristic size less than 28nm, provide data and means for the evaluation and the model establishment of the total dose radiation effect of the advanced nano device, and provide effective data for the development of the radiation-resistant advanced nano integrated circuit.
In one embodiment, a total dose radiation testing method for a nano MOSFET device is provided, as shown in fig. 2, comprising:
step S110, carrying out total dose radiation test on a plurality of devices to obtain test data of each device; each device belongs to the same batch of devices; the total dose radiation test procedure comprises a plurality of total dose test points; the test data comprises parameter variation of the device at each total dose test point;
step S120, acquiring a parameter standard deviation and a parameter mean value of each total dose test point according to test data of each device; the parameter standard deviation is calculated based on the variable quantity of each parameter corresponding to the total dose test point; the parameter mean value is obtained by calculating the variable quantity of each parameter corresponding to the total dose test point;
step S130, obtaining the variation relation between the parameter standard deviation and the parameter average value based on the parameter standard deviation and the parameter average value of each total dose test point, and obtaining the average number of defects of the single device gate oxide layer on each total dose test point based on the variation relation;
and step S140, processing the average number of the defects on each total dose test point based on Poisson distribution, and determining the defect distribution condition of the devices in the same batch.
Specifically, for the total dose radiation test of a batch of devices, m devices in the batch can be selected to perform the total dose radiation test; wherein the total dose radiation test comprises n total dose test points; n is greater than or equal to 2; m is greater than or equal to 2. For example, the total dose radiation test can be performed on m devices at one time, and the total dose radiation test can also be performed on m devices in batches. In the total dose radiation test process, testing the devices participating in the test when each total dose test point is reached to obtain test data of each device; when the test is completed, test data of each device on n total dose test points can be obtained, namely n × m test data. The test data may include a turn-on voltage, a pinch-off voltage, a transconductance, and a variation of each parameter. Specifically, the test data includes parameter variations of the device at each total dose test point, such as voltage variations, transconductance variations, and the like; the parameter variation may be determined based on a set test period, or may be determined based on a variation curve of the parameter, which is not specifically limited herein. It should be noted that the total dose radiation test is a test based on the total dose ionization effect; the number of the total dose test points and the specific dose value can be set according to the actual test requirements, and are not specifically limited herein; the devices in the same batch can be nano MOSFET devices with the same model or the same production batch, and are not limited herein. The Total Ionizing Dose Effect (TID Effect) refers to an Effect generated when the radiation Dose is continuously accumulated when the electronic component is continuously subjected to Ionizing radiation. The sum of the radiation doses received by the entire material or device is called the total dose, which is generally in units of rad or Gy. In a spatial radiation environment, the total dose radiation effect is mainly caused by trapping particles (mainly electrons and protons) in the van allen band. For a MOS device, when exposed to high-energy ionizing radiation, the incident high-energy electrons and protons cause ionization of the oxide layer atoms within the MOS tube, creating electron-hole pairs. The electrons and holes produced by ionization will in turn produce more electron-hole pairs, since they have a much higher energy than is required to generate a new electron-hole pair. The generation of a large number of electron-hole pairs in the oxide layer is the source of almost all total dose radiation effects and ultimately leads to permanent degradation of MOS device performance, such as increased off-state leakage current, threshold voltage drift, reduced transconductance and carrier mobility.
And each total dose test point is provided with a plurality of parameter variable quantities, and the parameter variable quantities corresponding to the total dose test points are calculated to obtain a parameter standard deviation and a parameter mean value. Illustratively, there are m parameter variations over 1 total dose trial point; calculating standard deviation based on the m parameter variable quantities to obtain parameter standard deviation; performing mean value calculation based on the m parameter variable quantities to obtain a parameter mean value; under the test mode of n total dose test points, n parameter variations and n parameter mean values can be correspondingly obtained. It should be noted that the standard deviation calculation and the mean calculation can be implemented by using the existing calculation methods, such as averaging, weighted averaging, etc., and are not limited herein.
According to the parameter standard deviation and the parameter mean value of each total dose test point, the change relation of the parameter standard deviation and the parameter mean value, such as a change curve, a fitting formula and the like, can be obtained. Based on the variation relation and the relation between the defect number and the parameter variation, the average defect number of the single device gate oxide layer on the total dose test point can be determined; wherein the variation relationship can be used to determine the average variation caused by a single defect at the total dose test point; and further confirming the average number of the defects of the single device gate oxide layer on the total dose test point according to the average variation and the parameter average value on the total dose test point. It should be noted that the relationship between the parameter variation and the number of defects may be different for different types of parameter variations, and is not specifically limited herein.
The total number of defects contained within different nanomosfet devices conforms to a poisson distribution. And the average number of defects on each total dose test point is processed by Poisson distribution, so that the defect distribution condition of the devices in the same batch can be determined.
Note that the present application can be implemented based on a processing device such as a Personal Computer (PC) or a tablet Computer. The treatment equipment can be matched with the test equipment to carry out a total dose radiation test; wherein, the processing equipment and the testing equipment can adopt the existing communication protocol or transmission line to carry out signal transmission. For example, the processing device may send test instructions to the test device instructing the test device to perform a total dose radiation test on the plurality of devices; further, the testing device may transmit the test data to the processing device, or the processing device may directly obtain the test data through the detection module, which is not limited herein.
Based on the fluctuation effect of the nano-sized device considered in the embodiment of the application, the fluctuation effect of the nano-sized device is analyzed by a mathematical statistical method, so that the total dose radiation degradation rule can be more accurately determined, the evaluation and the radiation reinforcement of the nano-sized device are facilitated, and effective data are provided for the total dose radiation evaluation and the evaluation of the batch-type device.
In one embodiment, as shown in fig. 3, the step of obtaining a variation relationship between the standard deviation and the mean value of the parameter based on the standard deviation and the mean value of the parameter of each total dose test point, and obtaining the average number of defects of the single device gate oxide layer on each total dose test point based on the variation relationship comprises:
step S132, performing curve fitting on the parameter standard deviation and the parameter mean value of each total dose test point, and determining a change relational expression of the parameter standard deviation and the parameter mean value;
step S134, determining the average variation of the total dose test point according to the variation relation; the average variation is the average value of parameter variation caused by single defect on the corresponding total dose test point;
and S136, obtaining the average number of defects of the single device gate oxide layer on the total dose test point based on the ratio of the parameter average value of the total dose test point to the average variation.
Specifically, curve fitting may be performed on the n parameter standard deviations and the parameter mean value to obtain a change curve formed by n groups of data, and then the change curve is fitted to obtain a change relational expression between the parameter standard deviations and the parameter mean value. Illustratively, for the nanometer device, the variation of the parameter standard deviation along with the parameter mean value conforms to the variation trend of the exponential function. Further, according to the change relation and the relation between the defect number and the parameter variation, the average variation caused by a single defect on a single total dose test point can be calculated; the average variation corresponds to a parameter variation, such as a threshold voltage variation, a transconductance variation, and the like, and is not limited herein. According to the ratio of the parameter mean value to the average variation on the total dose test point, the average number of defects of the single device gate oxide on the total dose test point can be obtained; it should be noted that the ratio of the parameter mean to the average variation may also be optimized by a correction factor, which is not specifically limited herein.
The embodiment of the application aims at the small nanometer MOSFET device with the fluctuation effect, can perform statistical distribution analysis of discrete data after radiation, determine the average variation caused by a single defect and the average number of the defects in the gate oxide layer of the single device, finally determine the statistical distribution condition of the defect distribution and the variation of radiation-induced parameters in the gate oxide layer of the MOSFET device of batch products, and provide effective data for the total dose radiation evaluation and the examination of the batch devices.
In one embodiment, a total dose radiation test is carried out on a plurality of devices, parameter tests of a plurality of total dose test points are carried out in the test, parameter variation of the devices before and after radiation of the total dose test points is extracted, standard deviation and mean value of the parameter variation of each total dose test point are counted according to the parameter variation, average variation of single defects is calculated, and average number of the defects in a gate oxide layer of each device and defect distribution conditions of the single device in batches are determined according to a Poisson distribution function.
In one embodiment, in the step of curve fitting the parameter standard deviation and the parameter mean value of each total dose test point and determining the variation relation between the parameter standard deviation and the parameter mean value:
the variation relation is shown as formula (1):
σi＝A×μi b(1)
wherein σiParameter standard deviation, μ, representing total dose test pointsiThe mean of the parameters for the total dose test points is shown, a is the first constant and b is the second constant.
Specifically, i represents the number of total dose test points. The constants a and b in the equation can be fit by a curve of the standard deviation of the parameter with the mean value of the parameter.
In one embodiment, in the step of determining the average amount of change in the total dose trial points according to the change relation:
the average change in total dose test points was determined based on equation (2):
wherein, ηiMean change in total dose test points are expressed.
Illustratively, the average threshold voltage variation caused by a single defect at the ith total dose test point may be calculated based on equation (2).
In one embodiment, in the step of obtaining the average number of defects of the single device gate oxide layer on the total dose test point based on the ratio of the parameter mean value and the average variation of the total dose test point:
obtaining the average number of defects of the gate oxide layer of the single device on the total dose test point based on the formula (3):
wherein N isiThe average number of defects of the gate oxide layer of a single device is obtained.
In one embodiment, the total number of defects contained within different nanomefet devices conforms to a poisson distribution, the probability distribution function of which can be shown in equation (4):
wherein N represents the number of total dose test points, P (N)iAnd n) is a probability.
The defect number in the gate oxide layer of the device after the total dose radiation of the batch nanometer device can be predicted through the formula (4), so that effective data can be provided for the total dose radiation evaluation and examination test of the nanometer device.
In one embodiment, the step of performing a total dose radiation test on a plurality of devices to obtain test data for each device comprises:
according to the total dose test point, performing parameter test on the device under a bias condition to obtain a characteristic curve;
and extracting the parameter variation from the characteristic curve.
Specifically, a total dose radiation test can be performed according to a required bias condition, parameter tests are performed at each total dose test point, a characteristic curve of each device is obtained, and then parameter variation is extracted from the characteristic curve. It should be noted that the bias condition may be set according to actual requirements, and the parameters related to the parameter test and the characteristic curve correspond to the bias condition and the required parameter variation, which is not limited herein. The embodiment of the application can obtain the characteristic curve obtained by testing the device, and is convenient for data recording and further expanded analysis.
In one embodiment, the characteristic comprises a transfer characteristic and/or an output characteristic.
Specifically, the transfer characteristic curve is a characteristic curve of the drain current and the gate voltage, and the output characteristic curve is a characteristic curve of the drain current and the drain voltage.
In one embodiment, the parameter variation includes a radiation-induced threshold voltage increment, and/or a radiation-induced maximum transconductance increment.
Specifically, the parameter variation may include a radiation-induced threshold voltage increment, a maximum transconductance increment, and the like. Different types of parameter variation can be set according to different test requirements, and various test requirements are met.
In one embodiment, the total dose trial points include a start point, a middle point, and an end point.
In particular, the total dose radiation test may comprise at least 3 total dose test points, i.e. a starting point, an end point and at least one intermediate point. The number of the corresponding total dose test points can be set according to the requirements of test precision, test time and the like, so that the precision requirement or the efficiency requirement of the test can be met.
In one embodiment, the number of intermediate points ranges from 3 to 5.
In particular, the number of intermediate points may be 3, 4 or 5. It should be noted that the radiation dose at the intermediate point may be set in a multiplicative manner or according to typical values, and is not particularly limited herein.
In one embodiment, the radiation test and device parameter testing and extraction before and after the test are performed first. Total dose radiation testing was performed under the required bias conditions for 10 to 20 MOSFET devices, with the highest total dose level radiated being determined by the test requirements. In the radiation process, 3 to 5 intermediate points of test are carried out, namely, the total dose point including the starting point and the final radiation stopping point needs to test 5 to 7 total dose level device parameters; the middle point selection can be selected in a multiplication manner, for example, when the highest total dose is 1Mrad (Si), the parameter test of the MOSFET device can be performed at 7 total dose test points, such as 0rad (Si), 20k rad (Si), 50k rad (Si), 100k rad (Si), 200k rad (Si), 500k rad (Si) and 1Mrad (Si). The parametric test includes a transfer characteristic curve (ID-VG curve), an output characteristic curve (ID-VD curve), and the like, and extracts Δ Vth (radiation-induced threshold voltage increment), Δ Gm (radiation-induced maximum transconductance increment), and the like from the characteristic curves. The parameter variation is Δ Vth for example.
If n total dose test points are tested during the total dose radiation test, the total dose values corresponding to the n points are respectively R1、R2、……Rn. And (4) performing test analysis by using m devices, and performing parameter test on the devices at each total dose test point to obtain a series of data. The parameter obtained was Δ Vth as in the R1 Total dose test Point1,1、ΔVth1,2……ΔVth1,mThe data obtained finally are:
performing statistical calculation on the m data of each total dose test point, and calculating the parameter standard deviation sigma and the parameter mean value mu of each total dose test point, namely based on the ith total dose testM data [ Δ Vth ] at the test pointi，1，ΔVthi，2，ΛΔVthi，m]Calculating the standard deviation sigmaiSum mean μiFinally obtaining sigma value and mu value on n total dose test points to obtain n standard deviations [ sigma ]1，σ2，Λσi，Λ σn]And n threshold voltage variation average values [ mu ]1，μ2，Λμi，Λ μn]。
Determining the variation of the sigma value with the mu value according to the sigma value and the mu value obtained by the test, namely (mu)1，σ1)、(μ2，σ2)……(μn，σn) The n groups of data form a curve graph of the variation of the sigma value along with the variation of the mu value, and the constants A and b in the formula can be determined by fitting the curve of the variation of the sigma value along with the variation of the mu value of the advanced nano device.
The average threshold voltage change η caused by a single defect at the ith total dose test point can be calculated according to equation (2) the average number of defects in the single device gate oxide at the ith total dose test point, N, is calculated according to equation (3)i. The defect number in the device gate oxide layer after the total dose radiation of the batch nanometer device can be predicted through the formula (4), so that effective data can be provided for the total dose radiation evaluation and examination test of the nanometer device.
In one embodiment, there is provided an apparatus, as shown in fig. 4, comprising:
the test module is used for carrying out total dose radiation test on a plurality of devices to obtain test data of each device; each device belongs to the same batch of devices; the total dose radiation test procedure comprises a plurality of total dose test points; the test data comprises parameter variation of the device at each total dose test point;
the test point data processing module is used for acquiring the parameter standard deviation and the parameter mean value of each total dosage test point according to the test data of each device; the parameter standard deviation is calculated based on the variable quantity of each parameter corresponding to the total dose test point; the parameter mean value is obtained by calculating the variable quantity of each parameter corresponding to the total dose test point;
the defect number obtaining module is used for obtaining the variation relation between the parameter standard deviation and the parameter mean value based on the parameter standard deviation and the parameter mean value of each total dose test point and obtaining the defect average number of the single device gate oxide layer on each total dose test point based on the variation relation;
and the defect distribution module is used for processing the average number of defects on each total dose test point based on Poisson distribution and determining the defect distribution condition of the devices in the same batch.
In one embodiment, the defect number acquiring module includes:
the curve fitting unit is used for performing curve fitting on the parameter standard deviation and the parameter mean value of each total dose test point and determining a change relation between the parameter standard deviation and the parameter mean value;
the average variation obtaining unit is used for determining the average variation of the total dose test point according to the variation relation; the average variation is the average value of parameter variation caused by single defect on the corresponding total dose test point;
and the defect number obtaining unit is used for obtaining the average number of the defects of the single device gate oxide layer on the total dose test point based on the ratio of the parameter average value of the total dose test point to the average variation.
In one embodiment, in the curve fitting unit, the variation relation is as follows:
σi＝A×μi b
wherein σiParameter standard deviation, μ, representing total dose test pointsiThe mean of the parameters for the total dose test points is shown, a is the first constant and b is the second constant.
In the average variation acquiring unit:
the average change in total dose test points was determined based on the following equation:
wherein, ηiMean change in total dose test points are expressed.
In one embodiment, the test module comprises:
the parameter testing unit is used for carrying out parameter testing on the device under the bias condition according to the total dose testing point to obtain a characteristic curve;
and the parameter variation extracting unit is used for extracting the parameter variation from the characteristic curve.
For specific limitations of the apparatus, reference may be made to the above limitations of the total dose radiation test method for the nano MOSFET device, which are not described herein again. The various modules in the above-described apparatus may be implemented in whole or in part by software, hardware, and combinations thereof. The modules can be embedded in a hardware form or independent from a processor in the computer device, and can also be stored in a memory in the computer device in a software form, so that the processor can call and execute operations corresponding to the modules.
In one embodiment, a computer device is provided, which may be a terminal, and its internal structure diagram may be as shown in fig. 5. The computer device includes a processor, a memory, a communication interface, a display screen, and an input device connected by a system bus. Wherein the processor of the computer device is configured to provide computing and control capabilities. The memory of the computer device comprises a nonvolatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of an operating system and computer programs in the non-volatile storage medium. The communication interface of the computer device is used for carrying out wired or wireless communication with an external terminal, and the wireless communication can be realized by Wi-Fi, an operator network, NFC (near field communication) or other technologies. The computer program is executed by a processor to implement a total dose radiation testing method for a nano-MOSFET device. The display screen of the computer equipment can be a liquid crystal display screen or an electronic ink display screen, and the input device of the computer equipment can be a touch layer covered on the display screen, a key, a track ball or a touch pad arranged on the shell of the computer equipment, an external keyboard, a touch pad or a mouse and the like.
Those skilled in the art will appreciate that the architecture shown in fig. 5 is merely a block diagram of some of the structures associated with the disclosed aspects and is not intended to limit the computing devices to which the disclosed aspects apply, as particular computing devices may include more or less components than those shown, or may combine certain components, or have a different arrangement of components.
In one embodiment, a computer device is provided, comprising a memory and a processor, the memory having a computer program stored therein, the processor implementing the following steps when executing the computer program:
carrying out total dose radiation test on a plurality of devices to obtain test data of each device; each device belongs to the same batch of devices; the total dose radiation test procedure comprises a plurality of total dose test points; the test data comprises parameter variation of the device at each total dose test point;
acquiring the parameter standard deviation and the parameter mean value of each total dose test point according to the test data of each device; the parameter standard deviation is calculated based on the variable quantity of each parameter corresponding to the total dose test point; the parameter mean value is obtained by calculating the variable quantity of each parameter corresponding to the total dose test point;
obtaining the variation relation between the parameter standard deviation and the parameter average value based on the parameter standard deviation and the parameter average value of each total dose test point, and obtaining the average number of defects of the single device gate oxide layer on each total dose test point based on the variation relation;
and processing the average number of the defects on each total dose test point based on Poisson distribution, and determining the defect distribution condition of the devices in the same batch.
In one embodiment, when the processor executes the computer program to obtain the variation relation between the parameter standard deviation and the parameter mean value based on the parameter standard deviation and the parameter mean value of each total dose test point, and obtain the average number of defects of the single device gate oxide layer on each total dose test point based on the variation relation, the following steps are further implemented:
performing curve fitting on the parameter standard deviation and the parameter mean value of each total dose test point, and determining a change relational expression of the parameter standard deviation and the parameter mean value;
determining the average variation of the total dose test points according to the variation relation; the average variation is the average value of parameter variation caused by single defect on the corresponding total dose test point;
and obtaining the average number of defects of the single device gate oxide layer on the total dose test point based on the ratio of the parameter average value of the total dose test point to the average variation.
In one embodiment, the processor executes the computer program in the step of curve fitting the parameter standard deviation and the parameter mean for each total dose test point and determining the variation relation between the parameter standard deviation and the parameter mean:
the variation relation is as follows:
σi＝A×μi b
wherein σiParameter standard deviation, μ, representing total dose test pointsiRepresents the mean value of the parameters of the total dose test points, A represents a first constant, b represents a second constant;
in the step of determining the average amount of change of the total dose test points according to the change relation:
the average change in total dose test points was determined based on the following equation:
wherein, ηiMean change in total dose test points are expressed.
In one embodiment, when the processor executes the computer program to perform the total dose radiation test on the plurality of devices to obtain the test data of each device, the following steps are further implemented:
according to the total dose test point, performing parameter test on the device under a bias condition to obtain a characteristic curve;
and extracting the parameter variation from the characteristic curve.
In one embodiment, a computer-readable storage medium is provided, having a computer program stored thereon, which when executed by a processor, performs the steps of:
carrying out total dose radiation test on a plurality of devices to obtain test data of each device; each device belongs to the same batch of devices; the total dose radiation test procedure comprises a plurality of total dose test points; the test data comprises parameter variation of the device at each total dose test point;
acquiring the parameter standard deviation and the parameter mean value of each total dose test point according to the test data of each device; the parameter standard deviation is calculated based on the variable quantity of each parameter corresponding to the total dose test point; the parameter mean value is obtained by calculating the variable quantity of each parameter corresponding to the total dose test point;
obtaining the variation relation between the parameter standard deviation and the parameter average value based on the parameter standard deviation and the parameter average value of each total dose test point, and obtaining the average number of defects of the single device gate oxide layer on each total dose test point based on the variation relation;
and processing the average number of the defects on each total dose test point based on Poisson distribution, and determining the defect distribution condition of the devices in the same batch.
In one embodiment, when the computer program is executed by the processor to obtain a variation relation between the standard deviation and the mean value of the parameter based on the standard deviation and the mean value of the parameter of each total dose test point, and obtain the average number of defects of the single device gate oxide layer on each total dose test point based on the variation relation, the following steps are further implemented:
performing curve fitting on the parameter standard deviation and the parameter mean value of each total dose test point, and determining a change relational expression of the parameter standard deviation and the parameter mean value;
determining the average variation of the total dose test points according to the variation relation; the average variation is the average value of parameter variation caused by single defect on the corresponding total dose test point;
and obtaining the average number of defects of the single device gate oxide layer on the total dose test point based on the ratio of the parameter average value of the total dose test point to the average variation.
In one embodiment, the computer program is executed by the processor in the step of curve fitting the standard deviation and the mean of the parameter for each total dose test point to determine a variation of the standard deviation and the mean of the parameter:
the variation relation is as follows:
σi＝A×μi b
wherein σiParameter standard deviation, μ, representing total dose test pointsiRepresents the mean value of the parameters of the total dose test points, A represents a first constant, b represents a second constant;
in the step of determining the average amount of change of the total dose test points according to the change relation:
the average change in total dose test points was determined based on the following equation:
wherein, ηiMean change in total dose test points are expressed.
In one embodiment, the computer program is executed by the processor to perform a total dose radiation test on a plurality of devices to obtain test data for each device, and further implements the following steps:
according to the total dose test point, performing parameter test on the device under a bias condition to obtain a characteristic curve;
and extracting the parameter variation from the characteristic curve.
It will be understood by those skilled in the art that all or part of the processes of the methods of the embodiments described above can be implemented by hardware instructions of a computer program, which can be stored in a non-volatile computer-readable storage medium, and when executed, can include the processes of the embodiments of the methods described above. Any reference to memory, storage, database or other medium used in the embodiments provided herein can include at least one of non-volatile and volatile memory. Non-volatile Memory may include Read-Only Memory (ROM), magnetic tape, floppy disk, flash Memory, optical storage, or the like. Volatile Memory can include Random Access Memory (RAM) or external cache Memory. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM), among others.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present application. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present application shall be subject to the appended claims.
Claims (10)
1. A total dose radiation test method for a nano MOSFET device is characterized by comprising the following steps:
carrying out total dose radiation test on a plurality of devices to obtain test data of each device; each of the devices belongs to the same batch of devices; the total dose radiation test procedure comprises a plurality of total dose test points; the test data comprises parameter variation of the device at each total dose test point;
acquiring a parameter standard deviation and a parameter mean value of each total dose test point according to test data of each device; the parameter standard deviation is calculated based on the variable quantity of each parameter corresponding to the total dose test point; the parameter mean value is calculated based on the variable quantity of each parameter corresponding to the total dose test point;
obtaining the variation relation between the parameter standard deviation and the parameter mean value based on the parameter standard deviation and the parameter mean value of each total dose test point, and obtaining the average number of defects of the single device gate oxide layer on each total dose test point based on the variation relation;
and processing the average number of the defects on each total dose test point based on Poisson distribution, and determining the defect distribution condition of the devices in the same batch.
2. The method of claim 1, wherein the step of obtaining the variation relationship between the standard deviation of the parameter and the mean value of the parameter based on the standard deviation of the parameter and the mean value of the parameter at each point of the total dose test, and obtaining the mean number of defects of the gate oxide of the single device at each point of the total dose test based on the variation relationship comprises:
performing curve fitting on the parameter standard deviation and the parameter mean value of each total dose test point, and determining a change relational expression of the parameter standard deviation and the parameter mean value;
determining the average variation of the total dose test points according to the variation relation; the average variation is the average value of parameter variation caused by single defect on the corresponding total dose test point;
and obtaining the average number of defects of the single device gate oxide layer on the total dose test point based on the ratio of the parameter average value and the average variation of the total dose test point.
3. The method of claim 2, wherein in the step of curve fitting the standard deviation and the mean of the parameters of each of the total dose test points to determine the variation of the standard deviation and the mean of the parameters:
the variation relation is as follows:
σi＝A×μi b
wherein σiRepresents the standard deviation, μ, of the parameters of the total dose test pointsiRepresents the mean value of the parameters of the total dose test point, A represents a first constant, b represents a second constantA second constant;
in the step of determining the average amount of change of the total dose test points according to the change relation:
determining the average amount of change in the total dose test point based on the following formula:
wherein, ηiMean change in the total dose test points is expressed.
4. The method of claim 1, wherein the step of performing a total dose radiation test on a plurality of devices to obtain test data for each of the devices comprises:
according to the total dose test point, performing parameter test on the device under a bias condition to obtain a characteristic curve;
and extracting the parameter variation from the characteristic curve.
5. Total dose radiation testing method of a nano MOSFET device according to claim 4, characterized in that said characteristic curve comprises a transfer characteristic curve and/or an output characteristic curve;
the parameter variation includes radiation-induced threshold voltage increase, and/or radiation-induced maximum transconductance increase.
6. The method for total dose radiation testing of nano-MOSFET devices according to any of claims 1 to 5, wherein the total dose test points comprise a start point, a middle point and an end point.
7. The method of claim 6, wherein the number of intermediate points ranges from 3 to 5.
8. An apparatus, comprising:
the test module is used for carrying out total dose radiation test on a plurality of devices to obtain test data of each device; each of the devices belongs to the same batch of devices; the total dose radiation test procedure comprises a plurality of total dose test points; the test data comprises parameter variation of the device at each total dose test point;
the test point data processing module is used for acquiring the parameter standard deviation and the parameter mean value of each total dose test point according to the test data of each device; the parameter standard deviation is calculated based on the variable quantity of each parameter corresponding to the total dose test point; the parameter mean value is calculated based on the variable quantity of each parameter corresponding to the total dose test point;
the defect number obtaining module is used for obtaining the variation relation between the parameter standard deviation and the parameter mean value based on the parameter standard deviation and the parameter mean value of each total dose test point and obtaining the defect average number of the single device gate oxide layer on each total dose test point based on the variation relation;
and the defect distribution module is used for processing the average number of the defects on each total dose test point based on Poisson distribution and determining the defect distribution condition of the devices in the same batch.
9. A computer device comprising a memory, a processor and a computer program stored on the memory and executable on the processor, characterized in that the processor, when executing the computer program, implements a total dose radiation testing method for a nanomosfet device according to any of claims 1 to 7.
10. A computer storage medium, on which a computer program is stored, which program, when being executed by a processor, carries out a total dose radiation testing method of a nanomosfet device according to any of the claims 1 to 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010299625.8A CN111579957B (en) | 2020-04-16 | 2020-04-16 | Total dose radiation test method, device and equipment for nano MOSFET device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010299625.8A CN111579957B (en) | 2020-04-16 | 2020-04-16 | Total dose radiation test method, device and equipment for nano MOSFET device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111579957A true CN111579957A (en) | 2020-08-25 |
| CN111579957B CN111579957B (en) | 2022-05-03 |
Family
ID=72124445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010299625.8A Active CN111579957B (en) | 2020-04-16 | 2020-04-16 | Total dose radiation test method, device and equipment for nano MOSFET device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111579957B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5832055A (en) * | 1996-08-08 | 1998-11-03 | Agfa-Gevaert | Method of correcting a radiation image for defects in the recording member |
| CN101900770A (en) * | 2009-05-25 | 2010-12-01 | 北京圣涛平试验工程技术研究院有限责任公司 | Method and system for assessing radiation resisting capability of device for satellite |
| CN102375896A (en) * | 2010-08-12 | 2012-03-14 | 中国科学院微电子研究所 | Silicon-on-insulator N-channel metal oxide semiconductor (SOI NMOS) total dosage radiation model building method |
| US20150017092A1 (en) * | 2012-03-15 | 2015-01-15 | The Regents Of The University Of California | Devices and methods for determining sensitivity to radiation |
| CN109557442A (en) * | 2018-11-23 | 2019-04-02 | 哈尔滨工业大学 | A kind of linear circuit radiation defect extracting method |
| CN110596560A (en) * | 2018-05-25 | 2019-12-20 | 北京大学 | Method for evaluating total dose radiation effect of FinFET (Fin field effect transistor) device |
| CN110968960A (en) * | 2019-12-13 | 2020-04-07 | 西安电子科技大学 | Method and device for determining total dose effect defect model |
-
2020
- 2020-04-16 CN CN202010299625.8A patent/CN111579957B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5832055A (en) * | 1996-08-08 | 1998-11-03 | Agfa-Gevaert | Method of correcting a radiation image for defects in the recording member |
| CN101900770A (en) * | 2009-05-25 | 2010-12-01 | 北京圣涛平试验工程技术研究院有限责任公司 | Method and system for assessing radiation resisting capability of device for satellite |
| CN102375896A (en) * | 2010-08-12 | 2012-03-14 | 中国科学院微电子研究所 | Silicon-on-insulator N-channel metal oxide semiconductor (SOI NMOS) total dosage radiation model building method |
| US20150017092A1 (en) * | 2012-03-15 | 2015-01-15 | The Regents Of The University Of California | Devices and methods for determining sensitivity to radiation |
| CN110596560A (en) * | 2018-05-25 | 2019-12-20 | 北京大学 | Method for evaluating total dose radiation effect of FinFET (Fin field effect transistor) device |
| CN109557442A (en) * | 2018-11-23 | 2019-04-02 | 哈尔滨工业大学 | A kind of linear circuit radiation defect extracting method |
| CN110968960A (en) * | 2019-12-13 | 2020-04-07 | 西安电子科技大学 | Method and device for determining total dose effect defect model |
Non-Patent Citations (1)
| Title |
|---|
| 周义建: "基于马尔科夫过程的半导体激光器空间辐射可靠性分析", 《光电器件》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111579957B (en) | 2022-05-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Hu | Gate oxide scaling limits and projection | |
| Van Dort et al. | A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditions | |
| Zhang et al. | Electron trap generation in thermally grown SiO2 under Fowler–Nordheim stress | |
| Jaeger et al. | Simulation of impurity freezeout through numerical solution of Poisson's equation with application to MOS device behavior | |
| Mezzomo et al. | Characterization and modeling of transistor variability in advanced CMOS technologies | |
| Groeseneken et al. | Trends and perspectives for electrical characterization and reliability assessment in advanced CMOS technologies | |
| CN102194794A (en) | Plasma damage detection structure as well as detection method and formation method thereof | |
| US11525857B2 (en) | Method for characterizing fluctuation induced by single particle irradiation in a device and application thereof | |
| Starkov et al. | Analysis of the threshold voltage turn-around effect in high-voltage n-MOSFETs due to hot-carrier stress | |
| Gildenblat et al. | Introduction to PSP MOSFET model | |
| CN102044458A (en) | Detection method of degree of damage of plasma | |
| Zebrev | Static and dynamic oxide-trapped-charge-induced variability in nanoscale CMOS circuits | |
| CN111579957B (en) | Total dose radiation test method, device and equipment for nano MOSFET device | |
| Gaur et al. | A MOS capacitor model for ultra-thin 2D semiconductors: the impact of interface defects and channel resistance | |
| Zimin et al. | Calibration and electric characterization of p-MNOS RADFETs at different dose rates and temperatures | |
| Minami et al. | Circuit-level simulation of TDDB failure in digital CMOS circuits | |
| Hansch et al. | A new self-consistent modeling approach to investigating MOSFET degradation | |
| Peng et al. | Analysis on the rapid recovery of irradiated VDMOSFETs by the positive high electric field stress | |
| Peckerar et al. | Modeling total dose effects in narrow-channel devices | |
| Makarov et al. | The research of degradation into the reliability of neural network computing systems made via use of nanoscale electronic elements | |
| İlik et al. | Radiation tolerance impact of trap density near the drain and source regions of a MOSFET | |
| Mo et al. | Total ionizing dose effects of Si vertical diffused MOSFET with SiO 2 and Si 3 N 4/SiO 2 gate dielectrics | |
| Larcher et al. | A new model of tunnelling current and SILC in ultra-thin oxides | |
| McLain et al. | Effects of process variation on radiation-induced edge leakage currents in n-channel MOSFETs | |
| CN113297732A (en) | Method for constructing analysis model for correlation between trapped charges and noise amplitude |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |