CN111575651A - Apparatus for manufacturing display device - Google Patents

Apparatus for manufacturing display device Download PDF

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Publication number
CN111575651A
CN111575651A CN202010041297.1A CN202010041297A CN111575651A CN 111575651 A CN111575651 A CN 111575651A CN 202010041297 A CN202010041297 A CN 202010041297A CN 111575651 A CN111575651 A CN 111575651A
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CN
China
Prior art keywords
deposition source
chamber
shutter
deposition
partition wall
Prior art date
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Pending
Application number
CN202010041297.1A
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Chinese (zh)
Inventor
张熙宣
尹相皓
林在夏
成箕运
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Samsung Display Co Ltd
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Samsung Display Co Ltd
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Filing date
Publication date
Application filed by Samsung Display Co Ltd filed Critical Samsung Display Co Ltd
Publication of CN111575651A publication Critical patent/CN111575651A/en
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/20Metallic material, boron or silicon on organic substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5846Reactive treatment
    • C23C14/5853Oxidation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04Coating on selected surface areas, e.g. using masks
    • C23C16/042Coating on selected surface areas, e.g. using masks using masks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Abstract

There is provided an apparatus for manufacturing a display apparatus, the apparatus including: a chamber configured to have a display substrate and a mask assembly in the chamber; a deposition source reservoir connected to the chamber, the deposition source reservoir having an opening portion and communicating with the chamber; a shutter located at the opening portion of the deposition source storage and configured to selectively shutter the opening portion of the deposition source storage; a deposition source in the deposition source reservoir to face the display substrate; and a separation driver connected to the deposition source storage and configured to separate a portion of the deposition source storage from the deposition source storage.

Description

Apparatus for manufacturing display device
This application claims priority and benefit of korean patent application No. 10-2019-0019186, filed by the korean intellectual property office at 19.2.2019, the disclosure of which is incorporated herein by reference in its entirety.
Technical Field
Aspects of some example embodiments relate to a device, for example, to a device to manufacture a display device.
Background
Mobile electronic devices have been widely used. Tablet Personal Computers (PCs) and small electronic devices such as mobile phones have recently been widely used as mobile electronic devices.
Mobile electronic devices include display devices for providing visual information, such as images, to a user in support of various functions. Recently, as other components for driving the display apparatus have been miniaturized, the percentage of display devices in mobile electronic devices has gradually increased, and a structure that can be bent from a planar state by a predetermined angle has been developed.
The above information disclosed in this background section is only for enhancement of understanding of the background, and therefore, it may contain information that does not constitute prior art.
Disclosure of Invention
Generally, when manufacturing a display device, a deposition material may be deposited on a display substrate. In this case, since the deposition source for supplying the deposition material is located in the chamber, when the deposition source is replaced, the apparatus itself is stopped to make the pressure in the chamber atmospheric pressure, thereby reducing the apparatus operation time, and causing a great deal of time and cost to be spent to make the pressure in the chamber suitable for the deposition process again.
Some example embodiments may include an apparatus and method of manufacturing a display apparatus, in which a deposition source may be replaced in a state in which a pressure in a chamber is maintained constant.
The example embodiments may be implemented using systems, methods, computer programs, or a combination thereof.
Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the presented embodiments.
According to some example embodiments, an apparatus for manufacturing a display apparatus, the apparatus comprising: a chamber in which a display substrate and a mask assembly are positioned; a deposition source reservoir connected to the chamber, having an opening portion, and communicating with the chamber; a shutter located at the opening portion of the deposition source storage and configured to selectively shutter the opening portion of the deposition source storage; a deposition source in the deposition source reservoir to face the display substrate; and a separation driver connected to the deposition source storage and configured to separate a portion of the deposition source storage from the deposition source storage.
According to some example embodiments, the apparatus may further include a pressure regulator connected to the chamber and/or the deposition source reservoir and configured to regulate a pressure in the chamber and/or the deposition source reservoir.
According to some example embodiments, the shutter may include: a shielding plate which is linearly movable and is configured to selectively shield an opening portion of the deposition source storage; and a linear driver connected to the shielding plate and configured to linearly move the shielding plate.
According to some example embodiments, the shutter may further include an electromagnetic portion on the deposition source reservoir and/or the shutter plate.
According to some example embodiments, the shutter may include: a shielding plate configured to selectively shield an opening portion of the deposition source storage; and a rotation driver connected to the shield plate and configured to rotate the shield plate.
According to some example embodiments, the shutter may further include an electromagnetic portion on the deposition source reservoir and/or the shutter plate.
According to some example embodiments, the shield plate may include: a first shield plate connected to the rotary driver; and a second shield plate facing the first shield plate and connected to the rotation driver.
According to some example embodiments, the deposition source storage may include: a partition wall connected to or in the chamber to have a space in which the deposition source is accommodated; and a separator configured to be selectively coupled to the partition wall or the chamber.
According to some example embodiments, a separator drive is connected to the separator and configured to move the separator.
According to some example embodiments, the deposition source storage may further include a heating unit on the partition wall.
According to some example embodiments, the deposition source storage may further include a cooler on the partition wall.
According to some example embodiments, the deposition source storage may further include an isolator located on the partition wall and configured to shield a space in which the shutter slides.
According to some example embodiments, in a method of manufacturing a display device, the method includes: positioning a display substrate and a mask assembly in a chamber; depositing a deposition material on the display substrate by using a deposition source located in the chamber or a deposition source reservoir connected to the chamber; isolating the deposition source reservoir from the chamber by selectively shielding an opening portion of the deposition source reservoir using a shutter; changing the pressure in the deposition source reservoir to atmospheric pressure; and replacing the deposition source by separating a portion of the deposition source reservoir from the deposition source reservoir.
According to some example embodiments, the shutter may slide to selectively shutter an opening portion of the deposition source storage.
According to some example embodiments, the shutter may be rotated to selectively shutter an opening portion of the deposition source storage.
According to some example embodiments, the shutter may be closely attached to the deposition source storage by using an electromagnetic part.
According to some example embodiments, the shutter may open the opening portion of the deposition source reservoir when the pressure in the chamber and the pressure in the deposition source reservoir are the same.
According to some example embodiments, the shutter may rotate to form a path through which the deposition material ejected from the deposition source is directed to the display substrate.
According to some example embodiments, the method may further comprise: the deposition source is positioned in the deposition source reservoir, and then the pressure of the deposition source reservoir is maintained in a vacuum state.
According to some example embodiments, a method of manufacturing a display device includes: positioning a display substrate and a mask assembly in a chamber; depositing a deposition material on the display substrate by using a deposition source located in the chamber or a deposition source reservoir connected to the chamber; isolating the deposition source reservoir from the chamber by selectively shielding an opening portion of the deposition source reservoir using a shutter; and replacing the deposition source by separating a portion of the deposition source reservoir from the deposition source reservoir, wherein the shutter includes: a shielding plate configured to selectively shield an opening portion of the deposition source storage; and a rotation driver connected to the shield plate and configured to rotate the shield plate.
Drawings
These and/or other aspects will become apparent and more readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a cross-sectional view of an apparatus for manufacturing a display device according to some example embodiments;
fig. 2 is a plan view for describing the operation of the shutter of fig. 1;
FIG. 3 is a perspective view of an apparatus for manufacturing a display device according to some example embodiments;
fig. 4 is a perspective view for describing the operation of the shutter of fig. 3;
FIG. 5 is a perspective view of an apparatus for manufacturing a display device according to some example embodiments;
FIG. 6 is a perspective view of the shutter of FIG. 5;
fig. 7 is a perspective view for describing the operation of the shutter of fig. 6;
fig. 8 is a perspective view for describing the operation of the shutter of fig. 6;
fig. 9 is a plan view of a display apparatus manufactured by using the apparatus for manufacturing a display apparatus according to some example embodiments; and
fig. 10 is a sectional view taken along line a-a of fig. 9.
Detailed Description
The present disclosure may include various embodiments and modifications, and some embodiments of the disclosure will be shown in the drawings and will be described herein in more detail. Effects and features of the present disclosure and the accompanying method will become apparent from the following description of the embodiments with reference to the accompanying drawings. However, the disclosure is not limited to the embodiments described below, and may be implemented in various ways.
Reference will now be made in detail to aspects of some embodiments, examples of which are illustrated in the accompanying drawings. In the drawings, like elements are denoted by like reference numerals, and a repetitive description thereof will not be given.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another.
As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
It will be further understood that the terms "comprises" and/or "comprising," when used herein, specify the presence of stated features or components, but do not preclude the presence or addition of one or more other features or components.
It will be understood that when a layer, region or element is referred to as being "formed on" another layer, region or element, it can be directly or indirectly formed on the other layer, region or element. That is, for example, intervening layers, regions or elements may be present.
The size of the elements may be exaggerated for convenience of illustration. In other words, since the sizes and thicknesses of elements in the drawings are arbitrarily illustrated for convenience of explanation, the following embodiments of the present disclosure are not limited thereto.
In the following examples, the X-axis, Y-axis, and Z-axis are not limited to the three axes of the rectangular coordinate system, but may be interpreted in a broader sense. For example, the X, Y, and Z axes may be perpendicular to each other, or may represent different directions that are not perpendicular to each other.
While certain embodiments of the present disclosure may be implemented differently, the specific process sequence may differ from that described. For example, two processes described in succession may be executed substantially concurrently or may be executed in the reverse order to that described.
As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. When a statement such as "at least one (or" an) of … … "follows a list of elements (elements), the entire list of elements (elements) is modified rather than modifying individual elements (elements) in the list.
Fig. 1 is a cross-sectional view of an apparatus 100 for manufacturing a display device according to some example embodiments. Fig. 2 is a plan view for describing the operation of the shutter 140 of fig. 1.
Referring to fig. 1 and 2, a plurality of devices 100 may be aligned to be connected to each other, and may form different layers of a display device. For example, the device 100 may form at least one of an intermediate layer and a counter electrode of a display device. However, for ease of illustration, one device 100 will be described.
The apparatus 100 may include a mask assembly 110, a chamber 120, a deposition source storage 130, a shutter 140, a deposition source 150, a separation driver 160, a pressure regulator 170, a transfer part 180, and a support part 190.
Mask assembly 110 may be formed in various ways. For example, mask assembly 110 may include at least one opening. In this case, the opening may have any one of various shapes. In this case, the deposition material passing through the mask assembly 110 may be deposited on the entire surface of the display substrate D or may be deposited as a pattern on a portion of the display substrate D.
Mask assembly 110 may include a mask frame. According to some example embodiments, the mask assembly 110 may include a mask frame 111 and a mask sheet 112. In this case, the mask frame 111 may have one central opening, or may have a lattice structure including a plurality of openings. In this case, one opening of the mask frame 111 may correspond to a display area of the display device. The mask sheet 112 may be positioned on the mask frame 111. In this case, a plurality of openings arranged to be separated from each other may be formed in the mask sheet 112. The opening may be formed to have a pattern, and the deposition material passing through the opening may be deposited as a pattern (e.g., a predetermined pattern) on the display area. The mask sheet 112 may be formed as one plate and may be positioned on the mask frame 111. According to some example embodiments, a plurality of mask sheets 112 may be provided, and the plurality of mask sheets 112 may be arranged adjacent to each other in the direction of the mask frame 111. For convenience of explanation, the description will be made on the assumption that the mask assembly 110 includes the mask frame 111 and the mask sheet 112.
An inner space may be formed in the chamber 120, and the mask assembly 110 and the display substrate D may be positioned in the inner space of the chamber 120. In addition, the chamber 120 may be connected to an adjacent apparatus for manufacturing the display apparatus, and a separate gate valve may be located at the connection portion to selectively separate the apparatus 100 from the adjacent apparatus.
The deposition source reservoir 130 may be located in the chamber 120, or may be connected to the chamber 120. For convenience of explanation, the description will be made assuming that the deposition source storage 130 is located in the chamber 120.
The deposition source storage 130 may include a partition wall 131, a separator 132, a heating unit 133, a cooler 134, and an isolator 135. In this case, the inside of the deposition source storage 130 may be completely separated from the chamber 120 by the shutter 140. For example, the deposition source 150 may be located in the deposition source reservoir 130.
A partition wall 131 may be located in the chamber 120. In this case, the partition wall 131 may have a space in which a portion facing the mask assembly 110 is open. In this case, the partition wall 131 may be connected to the bottom surface of the chamber 120, and may be positioned to completely surround the separator 132. The deposition source 150 may be slidably disposed in the space formed by the partition wall 131. For convenience of explanation, the description will be made on the assumption that the partition walls 131 vertically protruding from the bottom surface of the chamber 120 are connected to each other to form an inner space and are arranged in which a portion facing the mask assembly 110 is opened.
The separator 132 may be connected to the partition wall 131, and may be separated from the chamber 120. In this case, the deposition source 150 may be connected to the separator 132, and the deposition source 150 may move together with the separator 132 when the separator 132 is separated from the partition wall 131 or the chamber 120. The separator 132 may be located on a side surface of the chamber 120, and may open or close a space defined by a portion of the chamber 120, the shutter 140, and the partition wall 131. According to some example embodiments, the separator 132 may be connected to a bottom surface of the chamber 120, and may open or close a space defined by a portion of the chamber 120, the shutter 140, and the partition wall 131. For convenience of explanation, the following description will be made assuming that the separator 132 is located on the bottom surface of the chamber 120.
A heating unit 133 may be located on each of the partition walls 131. In this case, according to some example embodiments, the heating unit 133 may include a heater. In this case, the heating unit 133 may surround the outer surface of the partition wall 131, or may be inserted into the partition wall 131. In addition, a plurality of heating units 133 may be disposed on the partition wall 131 to be spaced apart from each other.
The cooler 134 may be located on a portion of the partition wall 131 where the shutter 140 is located. In this case, the cooler 134 may include a pipe through which the coolant circulates.
The spacer 135 may or may not be located on the partition wall 131 depending on the arrangement type of the shutter 140. For example, when the shielding member 140 does not pass through the partition wall 131 and the spacer 135 is positioned above the partition wall 131 to selectively shield the opening portion of the partition wall 131, the spacer 135 may not be positioned on the partition wall 131. In contrast, when the shielding member 140 passes through the partition wall 131, the spacer 135 may be located on the partition wall 131 and may selectively shield a portion of the partition wall 131 through which the spacer 135 passes. For convenience of explanation, the following description will be made assuming that the separator 135 is located on the partition wall 131.
Isolator 135 may include an isolation plate 135A on dividing wall 131 and an isolation drive 135B coupled to isolation plate 135A. In this case, the partition plate 135A may slide along the partition wall 131 according to the operation of the partition driver 135B to selectively shield the opening portion formed in the partition wall 131, so that the shutter 140 slides.
Isolation driver 135B may be formed in various ways. According to some example embodiments, isolation drive 135B may include a cylinder connected to isolation plate 135A. According to some example embodiments, isolation driver 135B may include: a ball screw connected to the partition plate 135A and configured to linearly move the partition plate 135A; and a motor connected to the ball screw. According to some example embodiments, isolation drive 135B may include a linear motor coupled to isolation plate 135A. According to some example embodiments, isolation driver 135B may include: a rack connected to the partition plate 135A; a gear connected to the rack; and a motor connected to the gear and configured to rotate the gear. In this case, isolation driver 135B is not limited thereto, and may include any device and structure connected to isolation plate 135A and configured to linearly move isolation plate 135A. For convenience of explanation, the description will be made assuming that the isolation driver 135B includes a cylinder.
The shutter 140 may be located on the deposition source reservoir 130 and/or the chamber 120. For convenience of explanation, the description will be made assuming that the shutter 140 is located on the deposition source storage 130.
The shutter 140 may include a shutter plate 141, a linear driver 142, and an electromagnetic part 143.
The shielding plate 141 may shield an opening portion of the partition wall 131 formed to face the display substrate D. In this case, the shielding plate 141 may be formed in various ways. For example, according to some example embodiments, the shielding plate 141 may be located between the opening portion of the partition wall 131 and the mask assembly 110, and may selectively shield the opening portion of the partition wall 131. According to some example embodiments, the shielding plate 141 may pass through the partition wall 131 and may slide. In this case, the shielding plate 141 may completely shield the opening portion of the partition wall 131. In this case, the partition wall 131 may include a separate space or structure supporting the shielding plate 141 when the shielding plate 141 slides. For convenience of explanation, description will be made assuming that the shielding plate 141 is slid into the partition wall 131 to shield the opening portion of the partition wall 131.
The linear driver 142 may be fixed to the chamber 120 or the partition wall 131, and may be connected to the shielding plate 141 and may linearly move the shielding plate 141. In this case, the linear driver 142 may linearly move the shielding plate 141 along a moving direction of the display substrate D (e.g., an X-axis direction of fig. 1) or a direction perpendicular to the moving direction of the display substrate D (e.g., a Y-axis direction of fig. 1). The linear driver 142 is the same as or similar to the isolation driver 135B, and thus a detailed description thereof will not be given. For convenience of explanation, the description will be made assuming that the linear driver 142 linearly moves the shielding plate 141 along the moving direction of the display substrate D.
The electromagnetic portion 143 may be located on the shielding plate 141 and/or the partition wall 131. In this case, the electromagnetic portion 143 can prevent a gap from being formed between the shielding plate 141 and the partition wall 131 by closely adhering the shielding plate 141 and the partition wall 131. According to some example embodiments, the electromagnetic portion 143 may be located on the shield plate 141. According to some example embodiments, the electromagnetic part 143 may be located on a surface (e.g., a rear surface) of the shield plate 141. According to some example embodiments, the electromagnetic part 143 may be located on a specific surface of the shielding plate 141, and may be located on the partition wall 131 facing the specific surface of the shielding plate 141. For convenience of explanation, the description will be made assuming that the electromagnetic portion 143 is located on the shield plate 141.
The deposition source 150 may be located in the deposition source reservoir 130. In this case, the deposition material may be located in the deposition source 150, and the deposition source 150 may evaporate or sublimate the deposition material. The deposition source 150 may include a separate heater to heat the deposition material. The deposition source 150 may include a nozzle that guides the deposition material to the outside. The plurality of deposition sources 150 may be disposed to be spaced apart from each other. In this case, the plurality of deposition sources 150 may be aligned. In addition, the plurality of deposition sources 150 may be arranged in a direction perpendicular to the moving direction of the display substrate D.
The separator driver 160 may be connected to the separator 132. In this case, the separator drive 160 may linearly move the separator 132. In this case, the separation driver 160 may be formed in various ways. According to some example embodiments, the separator actuator 160 may include an air cylinder connected to the separator 132. According to some example embodiments, the separation driver 160 may include: a ball screw connected to the separator 132 and configured to linearly move the separator 132; and a motor connected to the ball screw. According to some example embodiments, the split driver 160 may include a linear motor coupled to the splitter 132. According to some example embodiments, the separation driver 160 may include: a rack connected to the separator 132; a gear connected to the rack; and a motor connected to the gear and configured to rotate the gear. In this case, the separation driver 160 is not limited thereto, and may include any device and structure connected to the separator 132 and configured to separate the separator 132 from the chamber 120 and/or the partition wall 131 by linearly moving the separator 132. For convenience of explanation, the description will be made assuming that the separation actuator 160 includes an air cylinder.
The pressure regulator 170 may be connected to the deposition source storage 130 and/or the chamber 120, and may regulate the pressure in the deposition source storage 130 and/or the pressure in the chamber 120. According to some example embodiments, one pressure regulator 170 may be provided, and the pressure regulator 170 may be connected to the deposition source reservoir 130 and the chamber 120. According to some example embodiments, the pressure regulator 170 may include a first pressure regulator 171 connected to the chamber 120 and a second pressure regulator 172 connected to the deposition source reservoir 130. For convenience of explanation, the description will be made on the assumption that the pressure regulator 170 includes the first pressure regulator 171 and the second pressure regulator 172.
The second pressure regulator 172 may include a second pressure regulating pipe 172A connected to the inside of the deposition source tank 130 and a second pressure regulating pump 172B located in the second pressure regulating pipe 172A. In this case, the second pressure regulating pipe 172A may be connected to the separator 132 or the partition wall 131. In addition, the second pressure regulating pump 172B may introduce external air into the inside of the deposition source tank 130, or may discharge the air in the deposition source tank 130 to the outside. The first pressure regulator 171 may include a first pressure regulating pipe 171A connected to the inside of the chamber 120 and a first pressure regulating pump 171B in the first pressure regulating pipe 171A. In this case, the first pressure regulating pipe 171A and the first pressure regulating pump 171B are the same as or similar to the second pressure regulating pipe 172A and the second pressure regulating pump 172B, and thus a detailed description thereof will not be given.
The transfer section 180 may include a carrier 181, a power supply 182, a charging module 183, a substrate holder 184, and a carrier driver 185.
The carrier 181 may be positioned to correspond to the carrier drive 185 and may move together with the carrier drive 185. In this case, the power supply 182, the charging module 183, and the substrate holder 184 may be located on the carrier 181.
The power source 182 may be located on the carrier 181 and may supply power as the carrier 181 moves. In this case, the power source 182 may be rechargeable, as with a secondary battery.
The charging module 183 may be connected to the power supply 182 and may be wirelessly charged by an external device. For example, the charging module 183 may include a Contactless Power Supply (CPS) module, and the CPS module may be a wireless charging module. In this case, a separate charger may be provided in the chamber 120 to correspond to the charging module 183, and the charging module 183 may be wirelessly charged.
The substrate holder 184 may be connected to the carrier 181 and may hold the display substrate D. In this case, the substrate holder 184 may include an electrostatic chuck, an adhesive chuck, a clamp, and the like. For example, when the substrate holder 184 includes an electrostatic chuck, the substrate holder 184 may be connected to the power source 182, and may selectively hold the display substrate D.
The carrier drive 185 may be connected to the carrier 181 and may transport the carrier 181. In this case, the carrier drive 185 may be formed in various ways. For example, the carrier drive 185 may include: a scaffold connected to the carrier 181; a chain in which the bracket is inserted; an engine for driving the chain; and a sprocket. According to some example embodiments, carrier drive 185 may include a linear motor coupled to carrier 181. According to some example embodiments, the carrier drive 185 may be located on both sides of the carrier 181, and may include a guide rail for levitating the carrier 181. In this case, the permanent magnet and the electromagnet may be respectively located on the guide rail and a portion of the carrier 181 facing the guide rail. In this case, the carrier drive 185 may move the carrier 181 by suspending the carrier 181 by magnetic levitation. For convenience of explanation, the description will be made assuming that the carrier drive 185 moves the carrier 181 by suspending the carrier 181 by magnetic levitation.
The mask assembly 110 may be positioned on the support part 190, and the support part 190 may support the mask assembly 110. In this case, the support portion 190 may be located in the chamber 120 and may be a UVW stage. In this case, the support part 190 may adjust the position of the mask assembly 110 according to the position between the display substrate D and the mask assembly 110.
According to some example embodiments, the apparatus 100 may include a separate vision unit for sensing the position of the display substrate D and the position of the mask assembly 110. In this case, the vision unit may include a camera and may be located above the chamber 120. Further, the apparatus 100 may be connected to each element, and may include a controller for controlling each element. In this case, the controller may be located on the device 100 as a circuit board. According to some example embodiments, the controller may include an external terminal that is connected to the device 100 wirelessly or by wire.
A display device may be manufactured by using the device 100.
In detail, the mask assembly 110 may be positioned in the chamber 120. When the mask assembly 110 is positioned on the support part 190, the first pressure regulator 171 may regulate the pressure in the chamber 120 to be the same as or similar to the atmospheric pressure. Next, the first pressure regulator 171 may maintain the pressure in the chamber 120 to be the same as or similar to the pressure in the chamber of an adjacent apparatus for manufacturing the display apparatus. A display substrate D having some layers formed thereon may be positioned in the chamber 120. In this case, the display substrate D may be fixed to the substrate holder 184, and the mask assembly 110 may be positioned on the support part 190. According to some example embodiments, the display substrate D and the mask assembly 110 may be positioned in the chamber 120 in a state where the first pressure regulator 171 maintains the pressure in the chamber 120 to be the same as or similar to the atmospheric pressure. According to some example embodiments, when the mask assembly 110 is positioned in the separate chamber, the mask assembly 110 may be supplied to the chamber 120 in a state in which the pressure of the separate chamber and the chamber 120 is maintained to be the same.
After positioning the display substrate D and the mask assembly 110, positions of the display substrate D and the mask assembly 110 may be detected, and the display substrate D and the mask assembly 110 may be aligned with each other. According to some example embodiments, the position of the display substrate D and/or the position of the mask assembly 110 may be adjusted such that the display substrate D and the mask assembly 110 correspond to a preset position based on the positions of the display substrate D and the mask assembly 110 measured by the vision unit. According to some example embodiments, the position of the display substrate D and/or the position of the mask assembly 110 may be adjusted such that a portion of the display substrate D and a portion of the mask assembly 110 are positioned at corresponding positions based on the positions of the display substrate D and the mask assembly 110 measured by the vision unit.
When the display substrate D and the mask assembly 110 are positioned as described above, the first pressure regulator 171 may maintain the pressure in the chamber 120 to be the same as or similar to a vacuum. In this case, the shutter 140 may block or open a space between the chamber 120 and the deposition source storage 130. In this case, when the shutter 140 blocks the space between the chamber 120 and the deposition source tank 130, the second pressure regulator 172 may maintain the pressure in the deposition source tank 130 to be the same as the pressure in the chamber 120. For convenience of explanation, the description will be made assuming that the shutter 140 does not block the space between the chamber 120 and the deposition source storage 130.
The deposition source 150 may supply a deposition material to the display substrate D. In this case, the deposition material may pass through the mask assembly 110 and may be deposited on the display substrate D.
During this process, the carrier 181 may be linearly moved along the carrier drive 185. For example, the carrier 181 may be linearly moved along a first direction (e.g., an X-axis direction of fig. 1).
During this process, when the deposition material in the deposition source 150 is exhausted or the deposition source 150 malfunctions, the deposition source 150 in the deposition source storage 130 may be replaced with a new deposition source. In this case, a space between the chamber 120 and the deposition source storage 130 may be blocked.
For example, when the isolation driver 135B operates, the isolation plate 135A may cover the opening portion of the partition wall 131. Next, when the electromagnetic portion 143 operates, the partition plate 135A and the partition wall 131 may contact each other, and a space between the partition plate 135A and the partition wall 131 may be sealed.
Next, the second pressure regulator 172 may introduce external air into the inner space of the deposition source tank 130. In this case, the pressure in the deposition source reservoir 130 may be the same as or similar to atmospheric pressure. In this case, the chamber 120 may be completely isolated from the deposition source storage 130 by the isolation plate 135A, and thus, the pressure in the chamber 120 may be maintained to be the same as or similar to a vacuum, as in the related art.
When the pressure in the deposition source storage 130 is the same as or similar to the atmospheric pressure, the separation driver 160 may operate to separate the separator 132 from the partition wall 131 and/or the chamber 120. In this case, the inside of the deposition source storage 130 may be opened to the outside.
When the separator 132 is separated from the partition wall 131 and/or the chamber 120, the deposition source 150 may be taken out of the deposition source storage 130 together with the separator 132, or the deposition source 150 may be exposed to the outside of the deposition source storage 130. Next, the user may completely separate the separator 132 from the partition wall 131 and/or the chamber 120, and may replace the deposition source 150 with a new one.
Next, the separation driver 160 may operate again to insert a new deposition source into the deposition source storage 130. Next, the second pressure regulator 172 may regulate the pressure in the deposition source reservoir 130 to be the same as or similar to the pressure in the chamber 120. In this case, separate pressure sensors may be located in the chamber 120 and the deposition source storage 130, the pressure in the chamber 120 and the pressure in the deposition source storage 130 may be sensed, and the operations of the first and second pressure regulators 171 and 172 may be controlled based on the sensed pressure values.
The deposition process may be continuously performed after the deposition source 150 is replaced with a new deposition source.
The heating unit 133 may continuously operate while the deposition process is performed, and the deposition material may be prevented from being deposited on the partition wall 131. Further, the cooler 134 may continuously operate and may prevent deposition material from being deposited on the partition plate 135A.
Therefore, according to the apparatus 100 and method of manufacturing a display device (referred to as "manufacturing method"), the deposition source 150 can be replaced only by adjusting the pressure in the deposition source storage 130 without adjusting the pressure in the chamber 120.
Since there is no need to adjust the pressure in the chamber 120, the apparatus 100 and the manufacturing method may prevent an increase in deposition process time and cost due to replacement of the deposition source 150.
The apparatus 100 and the manufacturing method may ensure uniform deposition quality over the entire surface of the display apparatus by not changing the deposition environment of the chamber 120 in the middle of the deposition process.
Fig. 3 is a perspective view of an apparatus 200 for manufacturing a display apparatus according to some example embodiments. Fig. 4 is a perspective view for describing the operation of the shutter 240 of fig. 3.
Referring to fig. 3 and 4, the apparatus 200 may include a mask assembly, a chamber 220, a deposition source storage 230, a shutter 240, a deposition source 250, a separation driver 260, a pressure regulator 270, a transfer part, and a support part. In this case, the mask assembly, the chamber 220, the shutter 240, the deposition source 250, the separation driver 260, the pressure regulator 270, the transfer part, and the support part are the same as or similar to those of fig. 1 and 2, and thus a detailed description thereof will not be given.
The deposition source storage 230 may include a partition wall 231, a separator 232, a heating unit, a cooler, and a guide 235. In this case, the partition wall 231 and the heating unit are the same as or similar to those of fig. 1 and 2, and thus a detailed description thereof will not be given.
The separator 232 may be located on a side surface of the partition wall 231. For example, the separator 232 may be located in a moving direction of the display substrate D or a direction perpendicular to the moving direction of the display substrate D. In this case, the separator 232 may be pivotably connected to the partition wall 231 or may be slidably connected to the partition wall 231.
The cooler may be located on the guide 235. In this case, the cooler may be formed to be the same as or similar to the cooler 134 of fig. 1 and 2.
The guide 235 may be connected to the partition wall 231 and may guide the movement of the shielding plate 241. In this case, the guide 235 may be formed in a direction perpendicular to the moving direction of the display substrate D. In this case, the guide 235 may be formed as a plate on the bottom surface of the shielding plate 241, and the linear movement guide may be provided on the side surface of the shielding plate 241. Further, the linear driver 242 may be located on the guide 235.
With respect to operation of the apparatus 200, the display substrate D and the mask assembly may be introduced into the chamber 220, and then the display substrate D and the mask assembly may be aligned with each other.
Next, the deposition source 250 may perform a deposition process by supplying a deposition material to the display substrate D. When the deposition source 250 is replaced due to depletion of the deposition material or failure of the deposition source 250 during the deposition process, the linear driver 242 may operate, and the shield plate 241 may block the connection between the deposition source reservoir 230 and the chamber 220. That is, the shielding plate 241 may shield the opening portion of the partition wall 231. In this case, the shielding plate 241 may move in a direction perpendicular to the moving direction of the display substrate D, and the guide 235 may guide the movement of the shielding plate 241. Further, the electromagnetic part 243 may be operated, and the shielding plate 241 may be closely adhered to the chamber 220 and/or the partition wall 231, thereby maintaining the hermetic state of the chamber 220. For convenience of explanation, the description will be made assuming that the electromagnetic portion 243 is located on the partition wall 231.
When the connection between the deposition source reservoir 230 and the chamber 220 is blocked as described above, the pressure regulator 270 may only maintain the pressure in the deposition source reservoir 230 to be the same as the atmospheric pressure while maintaining the pressure in the chamber 220 to be the same as the pressure in the deposition process.
The separator drive 260 may rotate the separator 232. In this case, the deposition source 250 may not be connected to the separator 232. In this case, the separation actuator 260 may include a motor located between the separator 232 and the partition wall 231 and/or the chamber 220.
When the separator 232 is separated from the deposition source container 230, the inner space of the deposition source container 230 may be exposed to the outside. In this case, the user may separate the deposition source 250 from the deposition source storage 230 by using a separate robot arm, shuttle (shuttle), or the like. Next, a new deposition source may be placed in the deposition source storage 230.
When a new deposition source is placed in the deposition source container 230, the separation driver 260 may operate, and the separator 232 and the partition wall 231 of the deposition source container 230 may be coupled to each other, thereby isolating the inner space of the deposition source container 230 from the outside. In this case, when a separate electromagnetic part or a sealing part is provided on the separator 232 and the separator 232 is coupled to the partition wall 231 of the deposition source container 230, the external air may be completely blocked.
When the deposition source 250 is located in the deposition source reservoir 230, the pressure regulator 270 may discharge the air in the deposition source reservoir 230 to the outside such that the pressure in the deposition source reservoir 230 is the same as the pressure in the chamber 220.
When the pressure in the chamber 220 and the pressure in the deposition source reservoir 230 are the same as or similar to each other, the linear driver 242 may allow the deposition source reservoir 230 and the chamber 220 to communicate with each other by moving the shield plate 241. In addition, the deposition source 250 may operate and may perform the deposition process again.
Accordingly, the apparatus 200 and method of manufacturing a display device (referred to as "manufacturing method") may replace the deposition source 250 only by adjusting the pressure in the deposition source storage 230 without adjusting the pressure in the chamber 220.
Because there is no need to adjust the pressure in the chamber 220, the apparatus 200 and the manufacturing method may prevent an increase in deposition process time and cost due to replacement of the deposition source 250.
The apparatus 200 and the manufacturing method may ensure uniform deposition quality over the entire surface of the display apparatus by not changing the deposition environment of the chamber 220 in the middle of the deposition process.
Fig. 5 is a perspective view of an apparatus 300 for manufacturing a display apparatus according to some example embodiments. Fig. 6 is a perspective view of the shutter 340 of fig. 5. Fig. 7 is a perspective view for describing the operation of the shutter 340 of fig. 6. Fig. 8 is a perspective view for describing the operation of the shutter 340.
Referring to fig. 5 to 8, the apparatus 300 may include a mask assembly, a chamber 320, a deposition source storage 330, a shutter 340, a deposition source 350, a separation driver 360, a pressure regulator 370, a transfer part, and a support part. In this case, the mask assembly, the chamber 320, the deposition source 350, the separation driver 360, the pressure regulator 370, the transfer part, and the support part are the same as or similar to those of fig. 1 and 2 or fig. 3 and 4, and thus a detailed description thereof will not be given.
The deposition source storage 330 may include a partition wall 331, a separator 332, a heating unit, and a distance adjuster 335. In this case, the partition wall 331, the separator 332, and the heating unit are the same as or similar to those of fig. 1 and 2, and thus a detailed description thereof will not be given.
The distance adjuster 335 may change the distance between the deposition source 350 and the display substrate D. For example, the distance adjuster 335 may include a distance adjustment plate 335A on which the deposition source 350 is positioned and a distance adjustment driver 335B for changing the position of the distance adjustment plate 335A. In this case, the distance adjustment driver 335B is the same as or similar to the separation driver of fig. 1 to 4, and thus a detailed description thereof will not be given.
The shutter 340 may include a first shutter plate 341, a second shutter plate 342, an electromagnetic part 343, a rotation driver 344, and a connection chamber 355.
The first shield plate 341 and the second shield plate 342 may be spaced apart from each other. The first and second shield plates 341 and 342 may shield or open a connection portion of the chamber 320 and the connection chamber 355 and an opening portion of the deposition source storage 330 according to the operation of the rotation driver 344. For example, the first and second shield plates 341 and 342 may guide the deposition material sprayed by the deposition source 350 to the display substrate D according to the operation of the deposition source 350.
Electromagnetic section 343 may be located on chamber 320, connecting chamber 355, and/or deposition source reservoir 330. According to some example embodiments, the electromagnetic part 343 may be located on the first shield plate 341 and/or the second shield plate 342. According to some example embodiments, the electromagnetic part 343 may be located on the chamber 320, the connection chamber 355, the deposition source storage 330, the first shield 341, and/or the second shield 342. In this case, when the inner space of the chamber 320 and the inner space of the deposition source storage 330 are separated from each other, the electromagnetic part 343 may cause the inner space of the chamber 320 and the inner space of the deposition source storage 330 to be completely separated from each other, thereby maintaining the pressure in the chamber 320 and the pressure in the deposition source storage 330 to be different from each other. For convenience of explanation, the description will be made assuming that the electromagnetic part 343 is located on the second shield plate 342.
The rotation driver 344 may be connected to the first and second shield plates 341 and 342, and may rotate the first and second shield plates 341 and 342. In this case, the rotation driver 344 may include: a connector 344A connected to the first shield plate 341 and the second shield plate 342; a reducer connected to the connector 344A; and an engine 344B connected to the retarder. According to some example embodiments, the rotary drive 344 may include a connector 344A and a motor (or cylinder) 344B connected to the connector 344A. In this case, the rotation driver 344 is not limited thereto, and may include any device and structure connected to the first and second shield plates 341 and 342 and configured to rotate the first and second shield plates 341 and 342.
The first shield plate 341, the second shield plate 342, and the rotation driver 344 may be located on the connection chamber 355. In this case, the connection chamber 355 may connect the chamber 320 to the deposition source storage 330, and may have an inner space for blocking the external air. In addition, the connection chamber 355 may connect the inner space of the chamber 320 to the opening portion of the deposition source storage 330. In this case, a bottom surface of the chamber 320 to which the connection chamber 355 is connected may be formed to have an opening portion.
With respect to operation of apparatus 300, the mask assembly may be positioned on the support portion after maintaining the pressure in chamber 320 at the same or similar pressure as the pressure in the chamber housing the mask assembly or at the same or similar pressure as atmospheric pressure.
Further, the pressure regulator 370 may maintain the pressure in the chamber 320 to be the same as the pressure in the adjacent chamber. In this case, the pressure regulator 370 may maintain the pressure in the chamber 320 to be the same as or similar to the vacuum or be varied. The display substrate D may be positioned in the chamber 320 by opening a gate valve at an opening portion of the chamber 320. Next, the position of the display substrate D and the position of the mask assembly may be aligned with each other.
When the above-described processes are completed, the deposition source 350 may perform a deposition process by supplying a deposition material to the display substrate D. The deposition material supplied by the deposition source 350 may pass through the mask assembly and may be deposited on the display substrate D.
The distance between the deposition source 350 and the display substrate D may be adjusted during the deposition process. The distance between the display substrate D and the deposition source 350 may be adjusted according to the size and material of the display substrate D, for example. In this case, the distance adjustment driver 335B may be driven according to the deposition material. Further, in this case, the first and second shield plates 341 and 342 may be disposed in a direction perpendicular to the bottom surface of the chamber 320. In this case, the deposition material provided by the deposition source 350 may be guided to the mask assembly by the first and second shield plates 341 and 342.
The first and second shield plates 341 and 342 may block the connection between the deposition source storage 330 and the chamber 320 when the deposition source 350 is damaged or malfunctions during the deposition process.
For example, when the rotation driver 344 operates, the first shield plate 341 and the second shield plate 342 may rotate in one direction (e.g., clockwise or counterclockwise). In this case, the first and second shield plates 341 and 342 may shield the opening portion of the bottom surface of the chamber 320 and the opening portion of the deposition source reservoir 330, respectively. In addition, the electromagnetic part 343 may be operated, and the second shield plate 342 may be closely attached to the deposition source storage 330, thereby completely sealing the inner space of the deposition source storage 330.
The pressure regulator 370 may change the pressure in the deposition source reservoir 330 to atmospheric pressure. Next, the separator driver 360 may operate to open the separator 332. When the inside of the deposition source storage 330 is opened to the outside, the deposition source 350 may be taken out of the deposition source storage 330, and the deposition source 350 may be replaced with a new one.
When the replacement of the deposition source 350 is completed, the separator 332 may isolate the deposition source storage 330 from the outside. Next, the pressure regulator 370 may regulate the pressure in the deposition source reservoir 330 to be the same as or similar to the pressure in the chamber 320.
When the rotation driver 344 rotates, the first and second shield plates 341 and 342 may rotate to connect the deposition source storage 330 to the chamber 320. Next, a new deposition source may be operated and a deposition process may be performed.
Accordingly, the apparatus 300 and method of manufacturing a display device (referred to as "manufacturing method") may replace the deposition source 350 by adjusting only the pressure in the deposition source reservoir 330 without adjusting the pressure in the chamber 320.
Because there is no need to adjust the pressure in the chamber 320, the apparatus 300 and the manufacturing method may prevent an increase in deposition process time and cost due to replacement of the deposition source 350.
The apparatus 300 and the manufacturing method may ensure uniform deposition quality over the entire surface of the display apparatus by not changing the deposition environment of the chamber 320 in the middle of the deposition process.
Fig. 9 is a plan view of a display device 20 manufactured by using the apparatus for manufacturing a display device according to the disclosed embodiment. Fig. 10 is a sectional view taken along line a-a of fig. 9.
Referring to fig. 9 and 10, the display device 20 may include a display area DA defined on the substrate 21 and a non-display area NDA located outside the display area DA. The emission unit may be located in the display area DA, and the power supply wiring and the like may be located in the non-display area NDA. In addition, the pad unit C may be located in the non-display area NDA.
The display device 20 may include a display substrate D and a thin film encapsulation layer E. In this case, the display substrate D may include a substrate 21, a Thin Film Transistor (TFT), a passivation film 27, and a pixel electrode 28A. According to some example embodiments, the display substrate D may include some of the substrate 21, the TFT, the passivation film 27, the pixel electrode 28A, and the intermediate layer 28B. According to some example embodiments, the display substrate D may include a substrate 21, a TFT, a passivation film 27, a pixel electrode 28A, and an intermediate layer 28B. For convenience of explanation, description will be made on the assumption that the display substrate D includes the substrate 21, the TFT, the passivation film 27, and the pixel electrode 28A.
The substrate 21 may be formed of a plastic material or may be formed of a metal material such as stainless steel (SUS) or titanium (Ti). In addition, Polyimide (PI) may be used for the substrate 21. For convenience of explanation, the description will be made assuming that the substrate 21 is formed of PI.
A TFT may be formed on the substrate 21, a passivation film 27 may be formed to cover the TFT, and an Organic Light Emitting Device (OLED)28 may be formed on the passivation film 27.
The buffer layer 22 made of an organic compound and/or an inorganic compound may be further made of SiO on the top surface of the substrate 21x(x.gtoreq.1) or SiNx(x.gtoreq.1).
After the active layer 23 is formed in a pattern (e.g., a predetermined pattern) on the buffer layer 22, the active layer 23 is covered by the gate insulating layer 24. The active layer 23 includes a source region 23A and a drain region 23C, and also includes a channel region 23B between the source region 23A and the drain region 23C.
The active layer 23 may be formed to include various materials. For example, the active layer 23 may include an inorganic semiconductor material such as amorphous silicon or crystalline silicon. Alternatively, the active layer 23 may include an oxide semiconductor. Alternatively, the active layer 23 may include an organic semiconductor material. However, for convenience of explanation, the description will be made assuming that the source layer 23 is formed of amorphous silicon.
The active layer 23 may be formed by forming an amorphous silicon film on the buffer layer 22, crystallizing the amorphous silicon film into a polycrystalline silicon film, and patterning the polycrystalline silicon film. The source region 23A and the drain region 23C of the active layer 23 are doped with impurities according to the type of TFT, such as a driving TFT or a switching TFT.
A gate electrode 25 corresponding to the active layer 23 and an interlayer insulating layer 26 covering the gate electrode 25 are formed on the top surface of the gate insulating layer 24.
After the contact hole H1 is formed in the interlayer insulating layer 26 and the gate insulating layer 24, the source electrode 27A and the drain electrode 27B are formed on the interlayer insulating layer 26 to contact the source region 23A and the drain region 23C, respectively.
A passivation film 27 is formed over the TFT, and a pixel electrode 28A of the OLED 28 is formed on the passivation film 27. The pixel electrode 28A contacts the source electrode 27A of the TFT through a via hole H2 formed in the passivation film 27. The passivation film 27 may be formed of an inorganic material and/or an organic material to have a single-layer or multi-layer structure, and may be formed as a planarization film having a flat top surface regardless of the curvature of the lower film, or may be formed to be curved along the curvature of the lower film. The passivation film 27 may be formed of a transparent insulating material to achieve a resonance effect.
After the pixel electrode 28A is formed on the passivation film 27, the pixel defining film 29 is formed of an organic material and/or an inorganic material to cover the pixel electrode 28A and the passivation film 27 and expose the pixel electrode 28A.
The intermediate layer 28B and the counter electrode 28C are formed at least on the pixel electrode 28A. According to some example embodiments, the counter electrode 28C may be formed on the entire surface of the display substrate D. In this case, the counter electrode 28C may be formed on the intermediate layer 28B and the pixel defining film 29. For convenience of explanation, description will be made below assuming that the counter electrode 28C is formed on the intermediate layer 28B and the pixel defining film 29.
The pixel electrode 28A may function as an anode electrode, the counter electrode 28C may function as a cathode electrode, or the polarities of the pixel electrode 28A and the counter electrode 28C may be reversed.
The pixel electrode 28A and the counter electrode 28C may be insulated from each other by the intermediate layer 28B, and voltages of different polarities may be applied to the intermediate layer 28B, so that the organic emission layer emits light.
The intermediate layer 28B may include an organic emission layer. For example, the intermediate layer 28B may include an organic emission layer, and may further include at least one of a Hole Injection Layer (HIL), a Hole Transport Layer (HTL), an Electron Transport Layer (ETL), and an Electron Injection Layer (EIL). The disclosed embodiment is not limited thereto, and the intermediate layer 28B may include an organic emission layer, and may further include other various functional layers.
A plurality of intermediate layers 28B may be provided, and the plurality of intermediate layers 28B may form the display area DA. In this case, a plurality of intermediate layers 28B may be located in the display area DA to be spaced apart from each other.
One unit pixel may include a plurality of sub-pixels, and the plurality of sub-pixels may emit light of various colors. For example, the plurality of subpixels may include subpixels emitting red, green, and blue light or may include subpixels emitting red, green, blue, and white light.
An apparatus for manufacturing the display apparatus 20 (referred to as a "manufacturing apparatus") may form various layers on the display substrate D. For example, the manufacturing apparatus may form one or more layers of the intermediate layer 28B on the display substrate D. For example, the manufacturing apparatus may form at least one of an organic emission layer, a HIL, an HTL, an EIL, and an ETL.
According to some example embodiments, a capping layer may be located on the counter electrode 28C. The cap layer may have a lower refractive index than that of the electrode 28C, and may improve light efficiency by reducing the amount of light emitted by the intermediate layer 28B including the organic emission layer, which is totally reflected without being emitted to the outside.
For example, the cap layer may comprise an organic material such as poly (3, 4-ethylenedioxythiophene) (PEDOT), 4' -bis [ N- (3-methylphenyl) -N-phenylamino ] biphenyl (TPD), 4',4 ″ -tris [ (3-methylphenyl) phenylamino ] triphenylamine (m-MTDATA), 1,3, 5-tris [ N, N-bis (2-methylphenyl) -amino ] -benzene (o-MTDAB), 1,3, 5-tris [ N, N-bis (3-methylphenyl) -amino ] -benzene (m-MTDAB), 1,3, 5-tris [ N, N-bis (4-methylphenyl) -amino ] -benzene (p-MTDAB), 4' -bis [ N, n-bis (3-methylphenyl) -amino ] -diphenylmethane (BPPM), 4 '-dicarbazolyl-1, 1' -biphenyl (CBP), 4',4 ″ -tris (N-carbazole) triphenylamine (TCTA), 2',2 ″ - (1,3, 5-phenyl-tolyl) tris [ 1-phenyl-1H-benzimidazole ] (TPBI) and 3- (4-biphenyl) -4-phenyl-5-tert-butylphenyl-1, 2, 4-Triazole (TAZ).
Alternatively, the cap layer may include inorganic materials such as zinc oxide, titanium oxide, zirconium oxide, silicon nitride, niobium oxide, tantalum oxide, tin oxide, nickel oxide, indium nitride, and gallium nitride. The material for forming the cap layer is not limited thereto, and the cap layer may be formed of any of various materials.
The cover layer may be on the cover layer. The capping layer protects the OLED 28 from damage that may occur during subsequent processes using a plasma. The capping layer may comprise lithium fluoride (LiF).
The thin film encapsulation layer E may include a plurality of inorganic layers or may include an inorganic layer and an organic layer.
The organic layer of the thin film encapsulation layer E may include a polymer-based material. The polymer-based material may include acrylic resin, epoxy-based resin, PI, and polyethylene.
For example, the organic layer may include polyethylene terephthalate, polyethylene naphthalate, polycarbonate, PI, polyvinylsulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, acrylic resins (e.g., polymethyl methacrylate or polyacrylic acid), or a combination thereof.
The inorganic layer of the thin film encapsulation layer E may include one or more inorganic insulating materials from among aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon nitride, and silicon oxynitride.
The uppermost layer of the thin film encapsulation layer E exposed to the outside may be an inorganic layer preventing moisture from penetrating into the OLED 28.
The thin film encapsulation layer E may have at least one sandwich structure in which at least one organic layer is interposed between at least two inorganic layers. Alternatively, the thin film encapsulation layer E may have at least one sandwich structure in which at least one inorganic layer is interposed between at least two organic layers. Alternatively, the thin film encapsulation layer E may have a sandwich structure in which at least one organic layer is interposed between at least two inorganic layers and a sandwich structure in which at least one inorganic layer is interposed between at least two organic layers.
The thin film encapsulation layer E may include a first inorganic layer, a first organic layer, and a second inorganic layer sequentially formed on the OLED 28.
Alternatively, the thin film encapsulation layer E may include a first inorganic layer, a first organic layer, a second inorganic layer, a second organic layer, and a third inorganic layer sequentially formed on the OLED 28.
Alternatively, the thin film encapsulation layer E may include a first inorganic layer, a first organic layer, a second inorganic layer, a second organic layer, a third inorganic layer, a third organic layer, and a fourth inorganic layer sequentially formed on the OLED 28.
The area of the first organic layer may be smaller than that of the second inorganic layer, and the area of the second organic layer may be smaller than that of the third inorganic layer.
When a plurality of inorganic layers are provided as described above, the inorganic layers may be deposited on the edge portion of the display device 20 to contact each other, and the organic layers may not be exposed to the outside.
Therefore, the display device 20 can form an accurate image.
According to the apparatus and method of manufacturing a display device according to the embodiment, the deposition source may be replaced in a state where the pressure in the chamber is maintained constant. In addition, the apparatus and method of manufacturing a display device according to the embodiment may precisely guide the deposition material from the deposition source to the display substrate. The apparatus and method of manufacturing a display device according to the embodiment may reduce time and cost taken to replace a deposition source.
Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope defined by the following claims and their equivalents.

Claims (12)

1. An apparatus for manufacturing a display apparatus, the apparatus comprising:
a chamber configured to have a display substrate and a mask assembly located therein;
a deposition source reservoir connected to the chamber, the deposition source reservoir having an opening portion and communicating with the chamber;
a shutter located at the opening portion of the deposition source storage and configured to selectively shutter the opening portion of the deposition source storage;
a deposition source in the deposition source reservoir to face the display substrate; and
a separation driver connected to the deposition source storage and configured to separate a portion of the deposition source storage from the deposition source storage.
2. The apparatus of claim 1, further comprising a pressure regulator connected to the chamber and/or the deposition source reservoir and configured to regulate a pressure in the chamber and/or the deposition source reservoir.
3. The apparatus of claim 1, wherein the shutter comprises:
a shielding plate which is linearly movable and is configured to selectively shield the opening portion of the deposition source storage; and
a linear driver connected to the shield plate and configured to linearly move the shield plate.
4. The apparatus of claim 3, wherein the shutter further comprises an electromagnetic portion located on the deposition source reservoir and/or the shutter plate.
5. The apparatus of claim 1, wherein the shutter comprises:
a shielding plate configured to selectively shield the opening portion of the deposition source tank; and
a rotation driver connected to the shield plate and configured to rotate the shield plate.
6. The apparatus of claim 5, wherein the shutter further comprises an electromagnetic portion located on the deposition source reservoir and/or the shutter plate.
7. The apparatus of claim 5, wherein the shield plate comprises:
a first shield plate connected to the rotary driver; and
a second shield plate facing the first shield plate and connected to the rotation driver.
8. The apparatus of claim 1, wherein the deposition source reservoir comprises:
a partition wall connected to or in the chamber to have a space in which the deposition source is accommodated; and
a separator configured to be selectively coupled to the partition wall or the chamber.
9. The apparatus of claim 8, wherein the separator drive is connected to the separator and configured to move the separator.
10. The apparatus of claim 8, wherein the deposition source reservoir further comprises a heating unit located on the dividing wall.
11. The apparatus of claim 8, wherein the deposition source reservoir further comprises a cooler on the dividing wall.
12. The apparatus of claim 8, wherein the deposition source reservoir further comprises an isolator located on the partition wall and configured to shield a space in which the shutter slides.
CN202010041297.1A 2019-02-19 2020-01-15 Apparatus for manufacturing display device Pending CN111575651A (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102005541A (en) * 2009-08-27 2011-04-06 三星移动显示器株式会社 Thin film deposition apparatus and method of manufacturing organic light-emitting display apparatus using the same
CN103540896A (en) * 2012-07-16 2014-01-29 三星显示有限公司 Organic layer deposition apparatus, method of manufacturing organic light-emitting display apparatus by using the same, and organic light-emitting display apparatus manufactured by the method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102005541A (en) * 2009-08-27 2011-04-06 三星移动显示器株式会社 Thin film deposition apparatus and method of manufacturing organic light-emitting display apparatus using the same
CN103540896A (en) * 2012-07-16 2014-01-29 三星显示有限公司 Organic layer deposition apparatus, method of manufacturing organic light-emitting display apparatus by using the same, and organic light-emitting display apparatus manufactured by the method

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