CN111564523A - Method for inhibiting photoinduced attenuation of polycrystalline silicon solar cell at high temperature - Google Patents
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Abstract
The invention discloses a method for inhibiting photoinduced attenuation of a polycrystalline silicon solar cell at high temperature, which comprises the following steps: (1) placing a conductive metal plate on heating equipment, and setting the temperature to be 120-200 ℃; (2) after the temperature of the conductive metal plate is stable, placing the polycrystalline silicon solar cell on the conductive metal plate, reversely connecting the polycrystalline silicon solar cell with a constant-current voltage source, then opening the constant-current voltage source, regulating the voltage to be 1-2V, and carrying out reverse bias treatment for 5-15 minutes; (3) after the reverse bias treatment is finished, taking down the battery, and setting the temperature of the heating equipment to be 200-320 ℃; (4) after the temperature of the conductive metal plate is stable, placing the polycrystalline silicon solar cell on the conductive metal plate, and positively connecting a constant-voltage current source; and then, turning on a constant-voltage current source, adjusting the current to be 10-20A, carrying out forward heavy current treatment, and obtaining the required polycrystalline silicon solar cell after 10-20 minutes. The method has short processing time, and can effectively inhibit the photoinduced attenuation of the PERC structure polycrystalline silicon solar cell at higher temperature.
Description
Technical Field
The invention belongs to the field of polycrystalline silicon solar cells, and particularly relates to a method and a device for inhibiting photoinduced attenuation of a polycrystalline silicon solar cell at high temperature.
Background
Solar energy is used as renewable clean energy, and has the advantages of safety, reliability, no noise, no pollution, less restriction, low failure rate, simple maintenance, wide resources and the like which are not possessed by other conventional energy sources, so that the solar energy is widely applied to the aspects of grid-connected power generation, civil power generation, public facilities, integrated energy-saving buildings and the like.
In the field of solar power generation, a polycrystalline silicon photovoltaic power generation system occupies an important position in the new energy photovoltaic power generation market. Martin Green et al proposed a PERC structure solar cell in 1983; in 2006, the passivation effect of the AlOx dielectric film for the back passivation of the p-type PERC battery draws attention to the photovoltaic boundary, so that the industrialization of the PERC battery is possible; ramspeck et al in 2012 reported that the PERC-structure polycrystalline silicon solar cell can generate light-induced attenuation (namely LeTID) at a higher temperature (more than 75 ℃), the maximum rate of the light-induced attenuation reaches more than 10%, most market shares are occupied due to the expansion of the production energy of the PERC-structure polycrystalline silicon solar cell since 2017, the light-induced attenuation of the PERC-structure polycrystalline silicon solar cell causes wide attention in the scientific research field and the photovoltaic market, and the improvement of the performance attenuation becomes very critical.
However, the physical mechanism of the LeTID is not completely understood at present, and hydrogen-related defects caused by a large amount of hydrogen introduced into a passivation layer and metal impurities introduced in a battery process can be the root causes of the LeTID; the existing attenuation inhibition means mainly comprise the following means: 1. the rapid sintering temperature in the battery process is reduced. 2. The temperature rising and reducing rate of the rapid sintering is improved. 3. Annealing at higher temperature under the condition of keeping out of the light. 4. A polycrystalline silicon raw material with higher purity is adopted.
For example, chinese patent publication No. CN108615790A discloses a method for suppressing the thermally-assisted light-induced attenuation of a polysilicon PERC cell, the adopted cell structure includes a front electrode, a silicon nitride anti-reflection layer and passivation layer, a phosphorus diffusion layer, p-type polysilicon, an alumina passivation layer, a silicon nitride protection layer, and a back electrode, the cell is placed in a common annealing furnace without illumination and air atmosphere, the temperature of the annealing furnace is set to 180-.
The Chinese patent document with the publication number of CN110718605A discloses a sintering method of a solar cell, wherein the sintering process comprises a temperature rise process of more than 500 ℃ and a temperature reduction process of reducing the temperature to 500 ℃, and the sum of the average temperature rise rate of the temperature rise process and the average temperature reduction rate of the temperature reduction process is less than or equal to 80 ℃/s. The invention realizes the purpose of reducing light decay in the sintering process by adjusting the temperature change rate of more than 500 ℃ in the sintering process.
However, the existing methods have certain limitations, such as large difficulty in process control, poor stability, increased cost, and the like.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a method for inhibiting the photoinduced attenuation of a polycrystalline silicon solar cell at high temperature, and the photoinduced attenuation of the polycrystalline silicon solar cell with a PERC structure at high temperature can be effectively inhibited through short-time rapid treatment.
A method of inhibiting light-induced degradation of a polysilicon solar cell at high temperatures, comprising the steps of:
(1) placing a conductive metal plate on heating equipment, and setting the temperature of the heating equipment to be 120-200 ℃;
(2) after the temperature of the conductive metal plate is stable, the polycrystalline silicon solar cell is placed on the conductive metal plate, the front electrode of the cell is connected to the positive electrode of the constant current voltage source through a lead, and the back electrode of the cell is connected with the conductive metal plate and is connected to the negative electrode of the constant current voltage source; then, a constant-current voltage source is turned on, the voltage is adjusted to be 1-2V, and reverse bias processing is carried out for 5-15 minutes;
(3) after the reverse bias treatment is finished, taking down the battery, and setting the temperature of the heating equipment to be 200-320 ℃;
(4) after the temperature of the conductive metal plate is stable, the polycrystalline silicon solar cell is placed on the conductive metal plate, the front electrode of the cell is connected to the negative electrode of the constant-voltage current source through a lead, and the back electrode of the cell is connected with the conductive metal plate and is connected to the positive electrode of the constant-voltage current source; and then, turning on a constant-voltage current source, adjusting the current to be 10-20A, carrying out forward current treatment, and obtaining the required polycrystalline silicon solar cell after 10-20 minutes.
The invention adopts a mode of combining reverse bias treatment and heating and a mode of combining forward large current and heating to rapidly treat the polycrystalline silicon solar cell with the PERC structure in a short time, so that the attenuation degree of the polycrystalline silicon solar cell in the subsequent service process can be obviously reduced.
Free hydrogen (H) in solar cell silicon substrate due to PERC structure+、H-、H0) Is one of the key causes of the LeTID. Through the first step of higher-temperature reverse bias treatment, the stable combination of hydrogen in the polycrystalline silicon solar cell with the PERC structure, primary defects (dislocation, grain boundary and the like) in a silicon substrate and dielectric layer interface defects can be effectively promoted, so that the passivation effect is remarkably improved, and the concentration of free hydrogen is reduced; and the high-temperature positive large-current treatment in the second step can enable unbound free hydrogen to diffuse out of the silicon substrate more quickly or be converted into stable hydrogen dimer, so that the solar cell can undergo a faster LeTID attenuation and recovery process and keep stable performance in a subsequent process.
Preferably, in the step (1), the temperature of the heating device is set to be 120-180 ℃.
Preferably, in the step (2), the voltage of the constant current voltage source is regulated to be 1-1.5V.
Preferably, in the step (3), the temperature of the heating device is set to 240-320 ℃.
Preferably, in the step (4), the current of the constant voltage current source is adjusted to 12-20A.
Preferably, in the step (2), the reverse bias treatment is carried out for 8-12 minutes; and (4) carrying out forward heavy current treatment for 10-15 minutes.
Compared with the prior art, the invention has the following beneficial effects:
1. according to the method, a mode of combining reverse bias treatment and heating is adopted in the first step, so that the initial open-circuit voltage of the polycrystalline silicon solar cell with the PERC structure is effectively improved; and in the second step, a mode of combining forward high-current treatment and heating is adopted, so that the treatment time of the polycrystalline silicon solar cell with the PERC structure is effectively shortened, and the open-circuit voltage attenuation degree of the polycrystalline silicon solar cell can be controlled within 0.15% after the treatment by the method.
2. In the implementation process of the method, the required equipment is simple and easy to operate, and only a conductive metal plate, heating equipment, a constant-current voltage source and a constant-voltage current source are needed.
Drawings
FIG. 1 shows the conventional LeTID (75 ℃/1 kW. m) of the solar cell after pretreatment in example 1-2) Open circuit voltage variation graph in the attenuation process;
FIG. 2 shows the conventional LeTID (75 ℃/1 kW. m) of the solar cell after pretreatment in example 2-2) Open circuit voltage variation graph in the attenuation process;
FIG. 3 shows the conventional LeTID (75 ℃/1 kW. m. for the solar cell after pretreatment in example 3-2) Graph of open circuit voltage change during decay.
Detailed Description
The invention will be described in further detail below with reference to the drawings and examples, which are intended to facilitate the understanding of the invention without limiting it in any way.
Example 1
(1) A plurality of PERC structure polysilicon solar cells of 78mm x 78mm size from the same batch were provided and tested for initial open circuit voltage by a sinton Sun-Voc apparatus.
(2) After the conductive metal plate is placed on heating equipment, the temperature of the heating equipment is respectively set to be 120 ℃ and 160 ℃, and after the temperature of the heating equipment is stabilized, the solar cell is placed on the conductive metal plate.
(3) And (3) adopting reverse bias treatment: and connecting the front electrode of the solar cell to the anode of a constant-current voltage source through a lead, connecting the back electrode of the solar cell to a conductive metal plate, connecting the back electrode of the solar cell to the cathode of the constant-current voltage source, increasing the voltage of the constant-current voltage source to be 1V and 2V respectively, and taking down the solar cell after 10 minutes of treatment.
(4) The solar cell attenuated by simulating sunlight with a xenon lamp was selected as a control group without treatment. The attenuation of the simulated sunlight of the xenon lamp is specifically as follows: setting the temperature of the heating equipment to 75 ℃, and after the temperature is stable, directly over the heating equipmentThe placing illumination intensity is 1kW/m2And the treated solar cell is placed on a heating device for conventional LeTID attenuation.
(5) The open circuit voltage of the solar cells during the LeTID decay process was tested separately by a sinton Sun-Voc device at intervals, and the results are shown in FIG. 1.
It can be seen that under the conditions of controlling the temperature of the heating device to be 120 ℃ and 160 ℃, the voltage of the constant-current voltage source has little influence on the improvement degree of the initial open-circuit voltage, and the initial open-circuit voltage can be improved by about 0.4% under the four conditions, because the smaller reverse bias voltage at the temperature can inhibit the diffusion of hydrogen to the outer surface through the pn junction, thereby realizing the passivation of the hydrogen to the bulk defect; but the reverse bias processing alone can not effectively control the attenuation degree of the subsequent conventional LeTID, and the open-circuit voltage can still be attenuated by 1% or even more.
Example 2
(1) A plurality of PERC structure polysilicon solar cells of 78mm x 78mm size from the same batch were provided and tested for initial open circuit voltage by a sinton Sun-Voc apparatus.
(2) After the conductive metal plate is placed on heating equipment, the temperature of the heating equipment is respectively set to 200 ℃ and 320 ℃, and after the temperature of the heating equipment is stabilized, the solar cell is placed on the conductive metal plate.
(3) And (3) adopting forward high-current treatment: and connecting the front electrode of the solar cell to the negative electrode of a constant-voltage current source through a lead, connecting the back electrode of the solar cell to a conductive metal plate, connecting the back electrode of the solar cell to the positive electrode of the constant-voltage current source, increasing the current of the constant-voltage current source to 10A and 20A respectively, and taking down the solar cell after 10 minutes of treatment.
(4) The solar cell attenuated by simulating sunlight with a xenon lamp was selected as a control group without treatment. The attenuation of the simulated sunlight of the xenon lamp is specifically as follows: setting the temperature of the heating equipment to 75 ℃, after the temperature is stable, placing the heating equipment right above the heating equipment with the illumination intensity of 1kW/m2And the treated solar cell is placed on a heating device for conventional LeTID attenuation.
(5) The open circuit voltage of the solar cells during the LeTID decay process was tested separately by a sinton Sun-Voc device at intervals, and the results are shown in FIG. 2.
It can be seen that, unlike the reverse bias process, the forward high current process cannot significantly increase the initial open circuit voltage to within 0.06%, but can effectively reduce the subsequent conventional LeTID attenuation degree to about 0.5% when the temperature of the heating device is controlled to 320 ℃ and the current of the constant voltage current source is controlled to 15A.
Example 3
(1) A plurality of PERC structure polysilicon solar cells of 78mm x 78mm size from the same batch were provided and tested for initial open circuit voltage by a sinton Sun-Voc apparatus.
(2) After the conductive metal plate is placed on the heating device, the temperature of the heating device is set to 160 ℃, and after the temperature of the heating device is stabilized, the solar cell is placed on the conductive metal plate.
(3) And (3) adopting reverse bias treatment: and connecting the front electrode of the solar cell to the anode of a constant-current voltage source through a lead, connecting the back electrode of the solar cell to a conductive metal plate, connecting the back electrode of the solar cell to the cathode of the constant-current voltage source, increasing the voltage of the constant-current voltage source to 1V, treating for 10 minutes, and taking down the solar cell.
(4) After the reverse bias treatment was completed, the cell was removed and the temperature of the heating apparatus was set to 260 ℃.
(5) After the temperature of the conductive metal plate is stable, adopting positive heavy current to process: placing a polycrystalline silicon solar cell on a conductive metal plate, connecting a front electrode of the cell to a negative electrode of a constant-voltage current source through a lead, and connecting a back electrode of the cell to the conductive metal plate and to a positive electrode of the constant-voltage current source; then, a constant-voltage current source is turned on, the current is adjusted to be 15A, and the solar cell is taken down after 10 minutes of treatment.
(6) The solar cell attenuated by simulating sunlight with a xenon lamp was selected as a control group without treatment. The attenuation of the simulated sunlight of the xenon lamp is specifically as follows: setting the temperature of the heating equipment to 75 ℃, after the temperature is stable, placing the heating equipment right above the heating equipment with the illumination intensity of 1kW/m2Xenon lamp, thenThe treated solar cell was placed on a heating device for conventional LeTID attenuation.
(7) The open circuit voltage of the solar cells during the LeTID decay process was tested separately by a sinton Sun-Voc device at intervals, and the results are shown in FIG. 3.
It can be seen that the initial open-circuit voltage can be obviously improved by adopting the reverse bias processing, but the subsequent LeTID attenuation cannot be effectively inhibited, but the subsequent LeTID attenuation can be effectively inhibited by adopting the forward large-current processing, the inhibition effect of the LeTID can be further improved by combining the two-step processing, the initial open-circuit voltage can be improved by about 0.5% by combining the reverse bias processing of 160 ℃ and minus 1V and the two-step processing of 320 ℃ and plus 15A, and the subsequent conventional LeTID attenuation degree is controlled within 0.15%.
The method of the invention adopts the mode of combining reverse bias treatment and heating, forward heavy current treatment and heating to rapidly treat the polycrystalline silicon solar cell with the PERC structure in a short time, so that the attenuation degree of the polycrystalline silicon solar cell in the subsequent service process can be obviously reduced, the attenuation degree of the conventional open-circuit voltage is about 3 percent, and the maximum attenuation degree of the open-circuit voltage can be controlled within 0.15 percent after the polycrystalline silicon solar cell is treated by the method.
The embodiments described above are intended to illustrate the technical solutions and advantages of the present invention, and it should be understood that the above-mentioned embodiments are only specific embodiments of the present invention, and are not intended to limit the present invention, and any modifications, additions and equivalents made within the scope of the principles of the present invention should be included in the scope of the present invention.
Claims (6)
1. A method for inhibiting the photoinduced degradation of a polycrystalline silicon solar cell at high temperature is characterized by comprising the following steps of:
(1) placing a conductive metal plate on heating equipment, and setting the temperature of the heating equipment to be 120-200 ℃;
(2) after the temperature of the conductive metal plate is stable, the polycrystalline silicon solar cell is placed on the conductive metal plate, the front electrode of the cell is connected to the positive electrode of the constant current voltage source through a lead, and the back electrode of the cell is connected with the conductive metal plate and is connected to the negative electrode of the constant current voltage source; then, a constant-current voltage source is turned on, the voltage is adjusted to be 1-2V, and reverse bias processing is carried out for 5-15 minutes;
(3) after the reverse bias treatment is finished, taking down the battery, and setting the temperature of the heating equipment to be 200-320 ℃;
(4) after the temperature of the conductive metal plate is stable, the polycrystalline silicon solar cell is placed on the conductive metal plate, the front electrode of the cell is connected to the negative electrode of the constant-voltage current source through a lead, and the back electrode of the cell is connected with the conductive metal plate and is connected to the positive electrode of the constant-voltage current source; and then, turning on a constant-voltage current source, adjusting the current to be 10-20A, carrying out forward heavy current treatment, and obtaining the required polycrystalline silicon solar cell after 10-20 minutes.
2. The method for suppressing the light degradation of the polysilicon solar cell at a high temperature as set forth in claim 1, wherein the temperature of the heating device is set to 120 to 180 ℃ in the step (1).
3. The method for inhibiting the photoinduced degradation of the polycrystalline silicon solar cell at high temperature according to claim 1, wherein in the step (2), the voltage of the constant-current voltage source is adjusted to be 1-1.5V.
4. The method for suppressing the light degradation of a polysilicon solar cell at a high temperature as set forth in claim 1, wherein the temperature of the heating device is set to 240-320 ℃ in the step (3).
5. The method for suppressing the light degradation of the polysilicon solar cell at high temperature as set forth in claim 1, wherein the voltage of the constant current source is adjusted to 12-18A in the step (4).
6. The method for suppressing the light-induced degradation of the polycrystalline silicon solar cell at high temperature according to claim 1, wherein in the step (2), the reverse bias treatment is performed for 8-12 minutes; and (4) carrying out forward high-current treatment for 12-20 minutes.
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