CN111559860B - Chemical deposition process for large-size high-purity quartz glass - Google Patents
Chemical deposition process for large-size high-purity quartz glass Download PDFInfo
- Publication number
- CN111559860B CN111559860B CN202010434723.8A CN202010434723A CN111559860B CN 111559860 B CN111559860 B CN 111559860B CN 202010434723 A CN202010434723 A CN 202010434723A CN 111559860 B CN111559860 B CN 111559860B
- Authority
- CN
- China
- Prior art keywords
- quartz glass
- loop
- oxygen
- furnace
- size high
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/453—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Glass Melting And Manufacturing (AREA)
Abstract
A chemical deposition process of large-size high-purity quartz glass comprises the following steps: (1) preparing: placing a target material in a vertical deposition furnace, then taking organosilicon octamethylcyclotetrasiloxane as a raw material, and entering an evaporator after rectification and purification; (2) deposition: the organosilicon octamethylcyclotetrasiloxane steam is thermally hydrolyzed in a burner flame to generate silicon dioxide particles, and the silicon dioxide particles are continuously laminated and deposited on a target material target surface rotating around a self longitudinal axis in a vertical deposition furnace to obtain a quartz glass blank, and the quartz glass blank is melted to synthesize large-size high-purity quartz glass. The chemical deposition process of the large-size high-purity quartz glass, disclosed by the invention, is simple and efficient, overcomes the defect of high hydroxyl content in the chemical deposition process of the quartz glass in the prior art, and the prepared quartz glass blank has good density uniformity and a breathable structure, is beneficial to removing hydroxyl in materials subsequently, so that the large-size high-purity quartz glass is obtained, and has a wide application prospect.
Description
Technical Field
The invention belongs to the technical field of quartz glass preparation, and particularly relates to a chemical deposition process of large-size high-purity quartz glass.
Background
The quartz glass is prepared by high-temperature melting of high-purity quartz or artificially synthesized raw materials extracted from pure natural crystals, silica and quartz-rich rocks, is widely applied in modern technology, provides various key materials for important fields such as optical fiber communication, electric light sources, manned aerospace and the like, and is widely applied to high-tech fields such as laser, semiconductor industry and the like. The quartz glass is the best material in glass materials, and has the advantages of high compressive strength, low expansion coefficient, strong thermal shock resistance, stable chemical properties and high dielectric field strength, and has the reputation of glass king because the quartz glass is superior to other materials in various special properties.
With the expansion of the application field of quartz glass, the performance requirements of the quartz glass are gradually increased. Therefore, the preparation process of the quartz glass with large size, high purity and special requirement is concerned widely. At present, the main production modes are as follows: electric melting process, synthetic quartz glass manufacturing process and high-frequency plasma flame melting process. The manufacturing process of the synthetic quartz glass comprises a chemical vapor deposition process, a vapor axial deposition process, plasma chemical vapor deposition and the like.
In the chemical deposition process in the prior art, impurities, particularly hydroxyl groups, are difficult to avoid in the preparation process, so that the high temperature resistance of the prepared quartz glass is reduced, and the thermophysical properties such as refractive index, thermal expansion coefficient and the like are also influenced, and the requirement of increasing precision in the application field of the quartz glass cannot be met. Therefore, a chemical deposition process of large-size high-purity quartz glass is developed, and has a good application prospect.
Chinese patent application No. CN201711170763.0 discloses a quartz glass and a preparation method thereof, which adopts a composite process to compound one or more layers of high-quality and low-defect quartz glass on quartz glass substrates with arbitrary shapes and different surfaces, so as to reduce the production cost and improve the production efficiency, and does not improve the chemical deposition process of the quartz glass and the purity of a large-size quartz glass tube.
Disclosure of Invention
The purpose of the invention is as follows: in order to overcome the defects, the invention aims to provide the chemical deposition process for the large-size high-purity quartz glass, which has simple steps and convenient operation, overcomes the defect of high hydroxyl content in the chemical deposition process for the quartz glass in the prior art, and the prepared quartz glass blank has good density uniformity and air-permeable structure, is beneficial to removing the hydroxyl in the material in the subsequent process of melting and producing the synthetic quartz glass, thereby obtaining the large-size high-purity quartz glass and has wide application prospect.
The purpose of the invention is realized by the following technical scheme:
a chemical deposition process for large-size high-purity quartz glass is characterized by comprising the following steps:
(1) preparing: placing a target material in a vertical deposition furnace, then taking organosilicon octamethylcyclotetrasiloxane as a raw material, and introducing the raw material into an evaporator for gasification after rectification and purification; the vertical deposition furnace comprises a furnace body, a mechanical lifting and rotating device for supporting target materials below the inside of the furnace body, and a burner at a furnace mouth above the furnace body, wherein the burner is arranged at the furnace mouth through a moving device, and the moving device drives the burner to do reciprocating movement in the radial direction of a target material target surface; the mechanical lifting and rotating device drives a target material to lift and rotate around a longitudinal axis of the mechanical lifting and rotating device, and the rotating speed of the target material is 20 r/min; a gap of 20mm is reserved between the burner and the furnace mouth;
(2) deposition: the steam of the organosilicon octamethylcyclotetrasiloxane gasified by the evaporator is taken out by the purified nitrogen and is led into the flame of the burner of the vertical deposition furnace, the organosilicon octamethylcyclotetrasiloxane steam is thermally hydrolyzed in the flame of the burner to generate silicon dioxide particles, and the silicon dioxide particles are continuously laminated and deposited on the target surface rotating around the self longitudinal axis in the vertical deposition furnace to obtain a quartz glass blank, and the quartz glass blank is melted to synthesize the large-size high-purity quartz glass.
The chemical deposition process for the large-size high-purity quartz glass has the advantages of simple steps and convenience in operation, overcomes the defect of high hydroxyl content in the chemical deposition process for the quartz glass in the prior art, and the prepared quartz glass blank has good density uniformity and a breathable structure, and is beneficial to removing the hydroxyl in the material in the subsequent process of melting and producing synthetic quartz glass, so that the large-size high-purity quartz glass is obtained.
Furthermore, SiCl is generally used in the prior art4As a raw material, SiCl4Is a toxic chemical substance, and can generate a large amount of hydrogen chloride gas in the production process, thereby causing environmental pollution and having potential safety hazard. The invention takes organosilicon octamethylcyclotetrasiloxane as raw material, enters an evaporator for gasification after rectification and purification, generates silica particles through thermal hydrolysis in oxyhydrogen flame and deposits the silica particles on the target surface of a target material to form a quartz glass body, toxic chemicals are not used from the raw material to the production process, the produced tail gas is carbon dioxide and water vapor, the carbon dioxide and the water vapor can be directly discharged, the pollution and the danger of toxic substance leakage caused by the traditional production process are greatly reduced, and the production cost is saved.
The high-speed gas flow generated by the reaction impacts the target material and can cause the generation of SiO2 Splashing of particles, splashed SiO2The particles can be crystallized along with the flowing of gas at the furnace mouth of the vertical deposition furnace, namely near a burner, the generated crystals can fall onto the target surface of the target material under the influence of the gravity of the crystals after continuously growing to a certain degree, and finally the target surface of the target material is influenced to sinkThe mass of the product. Therefore, a gap of 20mm is reserved between the burner and the furnace mouth, the velocity field distribution in the vertical deposition furnace is improved by introducing air from the outside, and the SiO is reduced2The crystallization of particles at the furnace mouth is also convenient for the installation and the disassembly of the burner, and meanwhile, the problem that other impurities enter the vertical deposition furnace can not occur in the gap of 20 mm.
Further, in the chemical deposition process for the large-size high-purity quartz glass, the outer wall of the furnace body is a heat-insulating wall, the inner wall of the furnace body is a refractory wall, and the interlayer of the furnace body is an electric heating device and a circulating water cooling device.
Further, in the chemical deposition process of the large-size high-purity quartz glass, the thermal insulation wall is composed of refractory asbestos, a refractory fiber plate, a refractory castable or a refractory hollow ball; the refractory wall is composed of alumina, zirconia, silicon carbide or silicon nitride.
Furthermore, in the chemical deposition process for the large-size high-purity quartz glass, the middle part of the furnace body is provided with a plurality of air outlets.
The exhaust gas in the furnace body is discharged by arranging a plurality of exhaust outlets in the middle of the furnace body, and the pressure of the furnace opening of the vertical deposition furnace and the atmospheric pressure difference of the exhaust outlet can be controlled, so that the temperature field in the furnace is changed when the atmospheric pressure outside the furnace is changed, the target material target surface is ensured to form a stable flow field in the smoke in the furnace, silica particles are favorably and quickly, uniformly and effectively deposited on the target material target surface at high temperature, the silica particles are prevented from floating along with the smoke, and the forming quality of the quartz glass blank is ensured.
Further, in the above chemical deposition process for large-size high-purity silica glass, the first oxygen loop consists of a large oxygen loop, and the large oxygen loop is arranged around the central loop; the oxygen loop II and the oxygen loop III are respectively composed of a plurality of small oxygen loops, and the small oxygen loops are arranged at equal angles; the first hydrogen loop and the second hydrogen loop are respectively composed of a plurality of small hydrogen loops, and the small hydrogen loops are arranged at equal angles.
Further, in the chemical deposition process for large-size high-purity quartz glass, the central loop is connected with an oxygen pipeline and an evaporator pipeline, the first oxygen loop and the plurality of small oxygen loops are respectively connected with the oxygen pipeline, and the small hydrogen loops are respectively connected with a hydrogen pipeline.
The structure of the burner enables the temperature in the furnace body to be distributed more uniformly, and enhances the heat exchange with surrounding fluid. The method comprises the following specific steps: introducing a mixed gas of organosilicon octamethylcyclotetrasiloxane steam and oxygen into the central loop, introducing oxygen into the first oxygen loop and the plurality of small oxygen loops, introducing hydrogen into the small hydrogen loops, spraying the gases after entering the loops from the burner, generating heat through complex chemical reaction, continuously flowing high-temperature gas carrying the heat, transferring the heat to a target surface and surrounding fluid, and finally cooling and discharging the gases through an exhaust port.
Further, in the chemical deposition process of the large-size high-purity quartz glass, the oxygen pipeline, the evaporator pipeline and the hydrogen pipeline are respectively provided with an automatic constant pressure processor (137) and a mass flow controller (138).
In order to ensure stable supply of the burner to reduce adverse effects of variations in the flow rate of the raw material on the deposition surface, automatic constant pressure treatment using an automatic constant pressure processor and automatic control using a mass flow controller are required for the hydrogen, oxygen combustion gas and silicone octamethylcyclotetrasiloxane raw material.
Compared with the prior art, the invention has the following beneficial effects:
(1) the chemical deposition process for the large-size high-purity quartz glass has the advantages of simple steps and convenience in operation, overcomes the defect of high hydroxyl content in the chemical deposition process for the quartz glass in the prior art, and the prepared quartz glass blank has good density uniformity and a breathable structure, is beneficial to removing the hydroxyl in the material in the subsequent process of melting and producing synthetic quartz glass, so that the large-size high-purity quartz glass is obtained, and has a wide application prospect;
(2) the chemical deposition process of the large-size high-purity quartz glass takes the organosilicon octamethylcyclotetrasiloxane as a raw material, the organosilicon octamethylcyclotetrasiloxane is rectified and purified and then enters an evaporator for gasification, silica particles are generated by thermal hydrolysis in oxyhydrogen flame and are deposited on a target surface to form a quartz glass body, toxic chemicals are not used from the raw material to the production process, and the produced tail gas is carbon dioxide and water vapor which can be directly discharged, so that the pollution and the toxic substance leakage danger caused by the traditional production process are greatly reduced, and the production cost is saved;
(3) according to the chemical deposition process of the large-size high-purity quartz glass, a gap of 20mm is reserved between a burner and a furnace mouth, the velocity field distribution in the vertical deposition furnace is improved by introducing air from the outside, and the reduced SiO content is obtained2The crystallization of particles at the furnace mouth is convenient for the installation and the disassembly of the burner, and meanwhile, the problem that other impurities enter the vertical deposition furnace can not occur in a gap of 20 mm;
(4) according to the chemical deposition process of the large-size high-purity quartz glass, the structural design of the burner enables the temperature in the furnace body to be more uniformly distributed, and the heat exchange with surrounding fluid is enhanced; the hydrogen, oxygen combustion gas and the organosilicon octamethylcyclotetrasiloxane raw material are automatically processed by an automatic constant pressure processor under constant pressure and automatically controlled by a mass flow controller, so that the intelligent degree is high.
Drawings
FIG. 1 is a schematic cross-sectional view of a vertical deposition furnace for the chemical deposition process of large-size high-purity quartz glass according to the present invention;
FIG. 2 is a schematic view showing the arrangement of the burner top of the vertical deposition furnace for the chemical deposition process of large-size high-purity quartz glass according to the present invention;
in the figure: the device comprises a vertical deposition furnace 1, a furnace body 11, a furnace mouth 111, a gap 1111, a heat preservation wall 112, a refractory wall 113, an electric heating device 114, a circulating water cooling device 115, an exhaust outlet 116, a mechanical lifting and rotating device 12, a burner 13, a central loop 131, a first oxygen loop 132, a large oxygen loop 1321, a first hydrogen loop 133, a second oxygen loop 134, a small oxygen loop 1341, a second hydrogen loop 135, a small hydrogen loop 1331, a third oxygen loop 136, an automatic constant pressure processor 137, a mass flow controller 138, a moving device 14, an evaporator 2 and a target material a.
Detailed Description
The technical solutions in the embodiments of the present invention will be described in detail and fully with reference to the following drawings 1-2, which are made to show specific experimental data. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The following example provides a chemical deposition process for large-sized high-purity quartz glass.
Examples
(1) Preparing: placing a target material a in a vertical deposition furnace 1, then taking organosilicon octamethylcyclotetrasiloxane as a raw material, rectifying and purifying the raw material, and then feeding the raw material into an evaporator 2 for gasification;
(2) deposition: the steam of the organosilicon octamethylcyclotetrasiloxane gasified by the evaporator 2 is taken out by the purified nitrogen and is led into the flame of the burner 13 of the vertical deposition furnace 1, the organosilicon octamethylcyclotetrasiloxane steam is thermally hydrolyzed in the flame of the burner 13 to generate silicon dioxide particles, and the silicon dioxide particles are continuously laminated and deposited on the target surface of the target material a rotating around the self longitudinal axis in the vertical deposition furnace 1 to obtain a quartz glass blank, and the quartz glass blank is melted to synthesize the large-size high-purity quartz glass.
The vertical deposition furnace 1 comprises a furnace body 11, a mechanical lifting and rotating device 12 for supporting a target material a at the lower part in the furnace body 11, and a burner 13 at a furnace mouth 111 at the upper part of the furnace body 11, wherein the burner 13 is arranged at the furnace mouth 111 through a moving device 14, and the moving device 14 drives the burner 13 to reciprocate in the radial direction of the target surface of the target material a; the mechanical lifting and rotating device 12 drives a target material a to lift and rotate around a longitudinal axis of the mechanical lifting and rotating device, and the rotating speed of the target material a is 20 r/min; a gap 1111 of 20mm is reserved between the burner 13 and the furnace mouth 111.
Furthermore, the outer wall of the furnace body 11 is a heat-insulating wall 112, the inner wall of the furnace body 11 is a refractory wall 113, and the interlayer between the furnace bodies 11 is an electric heating device 114 and a circulating water cooling device 115. The heat-insulating wall 112 is composed of refractory asbestos, refractory fiber boards, refractory castable or refractory hollow balls; the refractory wall 113 is composed of alumina, zirconia, silicon carbide, or silicon nitride.
Further, a plurality of air outlets 116 are arranged in the middle of the furnace body 11. The exhaust ports 116 are arranged in the middle of the furnace body 11 to exhaust the exhaust gas in the furnace body 11, and the pressure difference between the furnace port 111 of the vertical deposition furnace 1 and the atmospheric pressure of the exhaust ports 116 can be controlled to avoid the change of the temperature field in the furnace when the atmospheric pressure outside the furnace changes, thereby ensuring that the target material a target surface forms a stable flow field in the flue gas in the furnace, being beneficial to the rapid, uniform and effective deposition of silica particles on the target material a target surface at high temperature, preventing the silica particles from scattering along with the flue gas and ensuring the forming quality of the quartz glass body.
Further, a central loop 131, a first oxygen loop 132, a first hydrogen loop 133, a second oxygen loop 134, a second hydrogen loop 135 and a third oxygen loop 136 are arranged at the top of the combustor 13; the central loop 131 is disposed at the center of the top of the burner 13, and the first oxygen loop 132, the first hydrogen loop 133, the second oxygen loop 134, the second hydrogen loop 135 and the third oxygen loop 136 are disposed around the central loop 131 from inside to outside.
Further, the first oxygen loop 132 is composed of a large oxygen loop 1321, and the large oxygen loop 1321 is arranged around the central loop 131; the second oxygen loop 134 and the third oxygen loop 136 are respectively composed of a plurality of small oxygen loops 1341, and the small oxygen loops 1341 are arranged at equal angles; the first hydrogen loop 133 and the second hydrogen loop 135 are respectively composed of a plurality of small hydrogen loops 1331, and the small hydrogen loops 1331 are arranged at equal angles.
Further, the central loop 131 is connected to an oxygen line and an evaporator line, the first oxygen loop 132 and the plurality of small oxygen loops 1341 are connected to an oxygen line, and the small hydrogen loops 1331 are connected to a hydrogen line.
Further, the oxygen pipeline, the evaporator pipeline and the hydrogen pipeline are all provided with an automatic constant pressure processor 137 and a mass flow controller 138.
In order to ensure that the burner 13 is supplied stably to reduce the adverse effect of the flow rate variation of the raw material on the deposition surface, the hydrogen gas, the oxygen combustion gas and the organosilicon octamethylcyclotetrasiloxane raw material are subjected to automatic constant pressure treatment by an automatic constant pressure processor 137 and are automatically controlled by a mass flow controller 138.
In conclusion, the chemical deposition process for the large-size high-purity quartz glass has the advantages of simple steps and convenience in operation, overcomes the defect of high hydroxyl content in the chemical deposition process for the quartz glass in the prior art, and is good in density uniformity of the prepared quartz glass blank, breathable in structure and beneficial to removing hydroxyl in materials in the subsequent process of melting and producing synthetic quartz glass, so that the large-size high-purity quartz glass is obtained.
Furthermore, SiCl is generally used in the prior art4As a raw material, SiCl4Is a toxic chemical substance, and can generate a large amount of hydrogen chloride gas in the production process, thereby causing environmental pollution and having potential safety hazard. The invention takes organosilicon octamethylcyclotetrasiloxane as raw material, enters an evaporator 2 for gasification after rectification and purification, generates silica particles through thermal hydrolysis in oxyhydrogen flame and deposits the silica particles on the target surface of a target material a to form a quartz glass body, toxic chemicals are not used from the raw material to the production process, the produced tail gas is carbon dioxide and water vapor, the carbon dioxide and the water vapor can be directly discharged, the pollution and the toxic substance leakage danger caused by the traditional production process are greatly reduced, and the production cost is saved.
The high-speed gas flow generated by the reaction impacts the target material a and can cause the generation of SiO2Splashing of particles, splashed SiO2The particles will crystallize in the furnace mouth 111 of the vertical deposition furnace 1, that is, near the burner 13, along with the gas flow, and the generated crystals will fall onto the target surface of the target material a due to the influence of their own gravity after continuously growing to a certain degree, and finally the quality of the target material a deposition on the target surface is influenced. Therefore, a gap 1111 of 20mm is reserved between the burner 13 and the furnace opening 111, and the velocity field distribution in the vertical deposition furnace 1 is improved by introducing air from the outside, thereby reducing SiO2Particle in furnaceThe crystallization of the port 111 also facilitates the mounting and dismounting of the burner 13, while the gap 1111 of 20mm does not present the problem of other impurities entering the vertical deposition furnace 1.
According to the chemical deposition process of the large-size high-purity quartz glass provided by the embodiment, a quartz glass blank with smooth surface and high purity and uniformity suitable for vitrification is prepared, the total content of metal impurities of the quartz glass blank is less than 1 ppm and the density is 0.7 +/-0.05 according to the standard JCT182-1997 and GB/T12442-90, and then the quartz glass blank is melted to produce and synthesize the large-size high-purity quartz glass.
The invention has many applications, and the above description is only a preferred embodiment of the invention. It should be noted that the above examples are only for illustrating the present invention, and are not intended to limit the scope of the present invention. It will be apparent to those skilled in the art that various modifications can be made without departing from the principles of the invention and these modifications are to be considered within the scope of the invention.
Claims (8)
1. A chemical deposition process for large-size high-purity quartz glass is characterized by comprising the following steps:
(1) preparing: placing a target material in a vertical deposition furnace (1), then taking organosilicon octamethylcyclotetrasiloxane as a raw material, rectifying and purifying the raw material, and then feeding the raw material into an evaporator (2) for gasification; the vertical deposition furnace (1) comprises a furnace body (11), a mechanical lifting rotating device (12) for supporting target materials at the lower part in the furnace body (11), and a burner (13) at a furnace mouth (111) above the furnace body (11), wherein the burner (13) is arranged at the furnace mouth (111) through a moving device (14), and the moving device (14) drives the burner (13) to do reciprocating movement in the radial direction of a target material target surface; the mechanical lifting and rotating device (12) drives a target material to lift and rotate around a longitudinal axis of the mechanical lifting and rotating device, and the rotating speed of the target material is 20 r/min; a gap (1111) with the thickness of 20mm is reserved between the burner (13) and the furnace mouth (111);
(2) deposition: the steam of the organosilicon octamethylcyclotetrasiloxane gasified by the evaporator (2) is taken out by the purified nitrogen and is led into the flame of the burner (13) of the vertical deposition furnace (1), the organosilicon octamethylcyclotetrasiloxane steam is thermally hydrolyzed in the flame of the burner (13) to generate silicon dioxide particles, and the silicon dioxide particles are continuously laminated and deposited on the target surface of the target material rotating around the self longitudinal axis in the vertical deposition furnace (1) to obtain a quartz glass blank, and the quartz glass blank is melted to synthesize large-size high-purity quartz glass.
2. The chemical deposition process of large-size high-purity quartz glass according to claim 1, characterized in that the outer wall of the furnace body (11) is a heat-insulating wall (112), the inner wall of the furnace body (11) is a refractory wall (113), and the intermediate layer of the furnace body (11) is an electric heating device (114) and a circulating water cooling device (115).
3. The chemical deposition process of large-size high-purity quartz glass according to claim 2, wherein the thermal insulation wall (112) is composed of refractory asbestos, refractory fiber board, refractory castable or refractory hollow sphere; the refractory wall (113) is composed of alumina, zirconia, silicon carbide or silicon nitride.
4. The chemical deposition process of large-size high-purity quartz glass according to claim 2, wherein a plurality of exhaust vents (116) are provided in the middle of the furnace body (11).
5. The chemical deposition process for large-size high-purity quartz glass according to claim 1, wherein a central loop (131), a first oxygen loop (132), a first hydrogen loop (133), a second oxygen loop (134), a second hydrogen loop (135), and a third oxygen loop (136) are arranged on the top of the burner (13); the central loop (131) is arranged at the center of the top of the burner (13), and the first oxygen loop (132), the first hydrogen loop (133), the second oxygen loop (134), the second hydrogen loop (135) and the third oxygen loop (136) are arranged around the central loop (131) from inside to outside.
6. The chemical deposition process for large-size high-purity quartz glass according to claim 5, wherein the first oxygen gas loop (132) consists of one large oxygen gas loop (1321), the large oxygen gas loop (1321) being arranged around the central loop (131); the oxygen loop II (134) and the oxygen loop III (136) are respectively composed of a plurality of small oxygen loops (1341), and the small oxygen loops (1341) are arranged at equal angles; the hydrogen loop I (133) and the hydrogen loop II (135) are respectively composed of a plurality of small hydrogen loops (1331), and the small hydrogen loops (1331) are arranged at equal angles.
7. The chemical deposition process for large-size high-purity quartz glass according to claim 6, wherein the central loop (131) is connected to an oxygen line and an evaporator line, the first oxygen loop (132) and the plurality of small oxygen loops (1341) are respectively connected to an oxygen line, and the small hydrogen loops (1331) are respectively connected to a hydrogen line.
8. The chemical deposition process for large-size high-purity quartz glass according to claim 7, wherein the oxygen line, the vaporizer line, and the hydrogen line are provided with an automatic constant pressure processor (137) and a mass flow controller (138).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010434723.8A CN111559860B (en) | 2020-05-21 | 2020-05-21 | Chemical deposition process for large-size high-purity quartz glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010434723.8A CN111559860B (en) | 2020-05-21 | 2020-05-21 | Chemical deposition process for large-size high-purity quartz glass |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111559860A CN111559860A (en) | 2020-08-21 |
| CN111559860B true CN111559860B (en) | 2022-04-19 |
Family
ID=72074938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010434723.8A Active CN111559860B (en) | 2020-05-21 | 2020-05-21 | Chemical deposition process for large-size high-purity quartz glass |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111559860B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114735925A (en) * | 2022-04-25 | 2022-07-12 | 新沂市东方石英玻璃有限公司 | Environment-friendly preparation process of ultrapure quartz glass |
| CN115353277A (en) * | 2022-08-26 | 2022-11-18 | 江苏亨芯石英科技有限公司 | Deposition kiln for synthesizing quartz and preparation method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106219949A (en) * | 2016-08-08 | 2016-12-14 | 湖北菲利华石英玻璃股份有限公司 | A kind of big specification light salts down the production method of film substrate synthetic quartz glass ingot |
| CN106746587A (en) * | 2016-12-26 | 2017-05-31 | 富通集团（嘉善）通信技术有限公司 | Manufacture the burner of preform |
| CN106915898A (en) * | 2017-04-11 | 2017-07-04 | 湖北菲利华石英玻璃股份有限公司 | A kind of production method of big specification silica loosening body |
-
2020
- 2020-05-21 CN CN202010434723.8A patent/CN111559860B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106219949A (en) * | 2016-08-08 | 2016-12-14 | 湖北菲利华石英玻璃股份有限公司 | A kind of big specification light salts down the production method of film substrate synthetic quartz glass ingot |
| CN106746587A (en) * | 2016-12-26 | 2017-05-31 | 富通集团（嘉善）通信技术有限公司 | Manufacture the burner of preform |
| CN106915898A (en) * | 2017-04-11 | 2017-07-04 | 湖北菲利华石英玻璃股份有限公司 | A kind of production method of big specification silica loosening body |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111559860A (en) | 2020-08-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111559860B (en) | Chemical deposition process for large-size high-purity quartz glass | |
| KR20010074714A (en) | Process and apparatus for manufacturing a glass ingot from synthetic silica | |
| CN105936584B (en) | A kind of preparation method of quartz glass | |
| JP4043768B2 (en) | Manufacturing method of optical fiber preform | |
| JPH08502470A (en) | Method and apparatus for manufacturing preforms for quartz glass lightwave conductors | |
| JP3687932B2 (en) | Manufacturing method of quartz glass plate | |
| CN106587590A (en) | Equipment for depositing optical fiber preforms by OVD (Outside Vapor Deposition) process | |
| CN104926088A (en) | Method for preparing highly-uniform synthetic quartz glass weight | |
| JP2001517597A5 (en) | ||
| CN105948468B (en) | Preparation device of quartz glass | |
| JP5589744B2 (en) | Manufacturing method of quartz glass base material | |
| CN217947963U (en) | Deposition kiln for synthesizing quartz | |
| US4666488A (en) | Process of producing a highly pure glass tube | |
| CN204848633U (en) | Deposition furnace of synthetic quartz glass stone roller of preparation | |
| CN115353277A (en) | Deposition kiln for synthesizing quartz and preparation method | |
| JP2022032071A (en) | Apparatus for manufacturing synthetic silica glass and method for manufacturing synthetic silica glass using the same | |
| JP4926165B2 (en) | Optical fiber preform manufacturing method and apparatus using high frequency induction thermal plasma torch | |
| CN101041550B (en) | Method and device for improving MCVD deposition efficiency and quality of low-temperature refrigeration | |
| WO2004014812A1 (en) | Method and apparatus for manufacturing optical fiber preforms, using the outside vapor deposition process | |
| CN114735925A (en) | Environment-friendly preparation process of ultrapure quartz glass | |
| JPH1053430A (en) | Device for producing base material for optical fiber and its production | |
| JP2009067660A (en) | Synthetic silica glass production device, and method for producing synthetic silica glass using the same | |
| CN107840562A (en) | A kind of preparation facilities of quartz ware | |
| JP4434083B2 (en) | Manufacturing apparatus and manufacturing method of glass fine particle deposit | |
| JP2005247636A (en) | Method of manufacturing porous preform for optical fiber and glass preform |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20220304 Address after: 221400 No. 18, Taishan Road, Xiyi high tech Industrial Development Zone, Xinyi City, Xuzhou City, Jiangsu Province Applicant after: Jiangsu Jinglong Technology Co.,Ltd. Address before: 221400 intersection of Xuhai road and Jianji Road, Xin'an Town, Xinyi City, Xuzhou City, Jiangsu Province Applicant before: Xinyi Dongfang Quartz Glass Co.,Ltd. |
|
| TA01 | Transfer of patent application right | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |