CN111554808B - MTJ device and preparation method thereof - Google Patents
MTJ device and preparation method thereof Download PDFInfo
- Publication number
- CN111554808B CN111554808B CN202010403425.2A CN202010403425A CN111554808B CN 111554808 B CN111554808 B CN 111554808B CN 202010403425 A CN202010403425 A CN 202010403425A CN 111554808 B CN111554808 B CN 111554808B
- Authority
- CN
- China
- Prior art keywords
- mtj device
- layer
- value
- hoffset
- free layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Abstract
The invention discloses an MTJ device, comprising: a pinning layer, a reference layer, a barrier layer, and a free layer; the free layer and the pinned layer are magnetic layers, wherein the difference value of net magnetic fields generated by the free layer is not greater than the maximum Hoffset value when the MTJ device is in the state of the highest working temperature; the maximum Hoffset value is the maximum Hoffset value of the corresponding MTJ device when the data storage time of the MTJ device is not less than the preset time at the highest working temperature. The Hoffset value of the MTJ device at the highest working temperature is close to 0, so that the MTJ device can keep good working performance in the states of working heating and the like, the data storage time of the MTJ device in the high-temperature working state is prolonged, the working performance of the MTJ device is ensured, and the wide application of the MTJ device is facilitated. The application also provides a preparation method of the MTJ device, which has the beneficial effects.
Description
Technical Field
The invention relates to the field of semiconductor memories, in particular to an MTJ device and a preparation method of the MTJ device.
Background
An MTJ device, referred to as a magnetic tunnel structure device, has a main structure including pinned and reference layers whose magnetization orientations are fixed, a free layer whose magnetization orientation can be changed by a magnetic field current, and a tunneling layer between the reference and free layers. When the magnetization directions of the free layer and the reference layer of the MTJ device are in the same direction, the MTJ device as a whole exhibits a low resistance state, and when the magnetization directions of the free layer and the reference layer of the MTJ device are in the opposite directions, the MTJ device exhibits a high resistance state. Data storage can thus be performed using data 0 or 1 when the free layer magnetization direction and the pinned layer magnetization direction in the MTJ device are in forward parallel or anti-parallel, respectively.
The memory that utilizes current to change the state of the MTJ device is a magnetic random access memory (STT-MRAM), which is a potentially new type of memory. The memory has the advantages of simple circuit design, high read-write speed, infinite erasing and writing and the like, and has the greatest advantage of non-volatility (no loss of power-off data) compared with the traditional memory.
Based on the effect of external magnetic field or current on the MTJ device, the magnetization direction of the free layer changes, and the MTJ device can present the characteristics of different resistance states and is used as the basic recording unit of a Magnetic Random Access Memory (MRAM); accordingly, the MTJ device needs to maintain a good recording function for data under the action of an external magnetic field or current, and there is a requirement on the duration of data storage of the MTJ device.
For the MTJ device, the magnetic parameter Hoffset value of the bias field of the MTJ device has strong correlation with the data storage time length of the MTJ device, and generally, the closer the Hoffset value is to 0, the more balanced the data storage time of the MTJ device in two states. Therefore, during the actual production process, the MTJ device is often modulated to 0 or a value close to 0 as much as possible.
Disclosure of Invention
The invention aims to provide an MTJ device and a preparation method of the MTJ device, which ensure that the data storage time of the MTJ device can meet the working requirement in a high-temperature state.
To solve the above technical problem, the present invention provides an MTJ device including: a pinning layer, a reference layer, a barrier layer, and a free layer;
the pinned layer and the reference layer are magnetic layers corresponding to the maximum Hoffset value, wherein the difference value of net magnetic fields generated by the free layer is not greater than the maximum Hoffset value when the MTJ device is in a preset highest working temperature state; the maximum Hoffset value is the maximum Hoffset value of the corresponding MTJ device when the data storage duration of the MTJ device is not less than the preset duration in the state of the highest working temperature.
In an optional embodiment of the present application, the content ratio of fe to co in the reference layer is within a first predetermined ratio range, and the content ratio of fe to co in the pinned layer is within a second predetermined ratio range, so that the difference between the net magnetic fields generated by the pinned layer and the reference layer in the free layer is smaller than the predetermined magnetic field value in the highest operating temperature state of the MTJ device.
In an optional embodiment of the present application, the free layer is a magnetic layer having a coercivity no less than a preset coercivity.
In an optional embodiment of the present application, a thickness of the free layer is a preset thickness, so that the coercivity of the free layer is the preset coercivity.
In an alternative embodiment of the present application, the MTJ device is a free layer and the reference and pinned layer magnetizations are perpendicular magnetization devices.
The application also provides a preparation method of the MTJ device, which comprises the following steps:
predetermining the maximum Hoffset value of the corresponding MTJ device when the MTJ device is in the highest working temperature state and the data storage duration of the MTJ device is not less than the preset duration; wherein the Hoffset value of the MTJ device is equal to the difference in net magnetic fields generated by the reference layer and the pinned layer of the MTJ device in the free layer;
setting the magnitude of net magnetic fields generated by a reference layer and a pinned layer in the MTJ device in a free layer respectively according to the maximum Hoffset value;
and setting the preparation parameters of the MTJ device according to the magnitude of the net magnetic field, and forming a reference layer, a pinned layer and a free layer of the MTJ device layer by layer according to the technological process of the MTJ device to obtain the MTJ device which is prepared.
In an optional embodiment of the present application, the setting of the preparation parameters of the MTJ device according to the magnitude of the net magnetic field includes setting a ratio of iron content to cobalt content in the reference layer within a first preset ratio range and setting a ratio of iron content to cobalt content in the pinned layer within a second preset ratio range according to the magnitude of the net magnetic field.
In an optional embodiment of the present application, the setting of the fabrication parameter of the MTJ device according to the magnitude of the net magnetic field includes:
and setting the coercivity of the free layer of the MTJ device to be not less than the preset coercivity.
In an optional embodiment of the present application, the setting a coercivity of a free layer of the MTJ device to be not less than a preset coercivity comprises:
and setting the thickness of the free layer to be not less than a preset thickness.
The invention provides an MTJ device, comprising: a pinned layer, a reference layer, a barrier layer, and a free layer; the reference layer and the reference layer are magnetic layers corresponding to the maximum Hoffset value, wherein the difference value of net magnetic fields generated by the free layer is not greater than the maximum Hoffset value when the MTJ device is in a preset highest working temperature state; the maximum Hoffset value is the maximum Hoffset value of the corresponding MTJ device when the data storage time of the MTJ device is not less than the preset time under the state of the highest working temperature.
In the application, considering that the MTJ device does not work at normal temperature in practical application, but the Hoffset of the MTJ device changes along with the change of the working temperature of the MTJ device, compared with the conventional MTJ device, the Hoffset of the MTJ device is not close to 0 at normal temperature, but the Hoffset value at the highest working temperature in the working temperature range of the MTJ device is close to 0, so that the MTJ device can keep better working performance in the states of working heat and the like, the balance of data storage duration in the high-temperature working state of the MTJ device is improved, the working performance of the MTJ device is ensured, and the wide application of the MTJ device is facilitated.
The application also provides a preparation method of the MTJ device, which has the beneficial effects.
Drawings
In order to more clearly illustrate the embodiments or technical solutions of the present invention, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.
FIG. 1 is a schematic diagram of resistance of an MTJ device provided by an embodiment of the present application varying with magnetic field;
FIG. 2 is a box plot diagram of Hoffset value of an MTJ device according to the operating temperature provided by the embodiment of the present application;
FIG. 3 is a schematic structural diagram of an MTJ device provided in an embodiment of the present application;
fig. 4 is a schematic flowchart of a method for manufacturing an MTJ device according to an embodiment of the present application.
Detailed Description
The core of the invention is to provide the MTJ device and the preparation method thereof, so that the balance of data storage time of the MTJ device in a high-temperature working state and a high-resistance state and a low-resistance state is improved, and the data storage time is prolonged.
In order that those skilled in the art will better understand the disclosure, reference will now be made in detail to the embodiments of the disclosure as illustrated in the accompanying drawings. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1, fig. 1 is a schematic diagram of resistance of an MTJ device according to an embodiment of the present application.
In fig. 1, the dashed-two dotted line is the relationship of resistance change during the parallel transition of the magnetization direction of the free layer in the MTJ device from the antiparallel direction to the forward direction with the magnetization direction of the reference layer, and LHc is the magnitude of the switching magnetic field during the parallel transition of the magnetization direction of the free layer from the antiparallel direction to the forward direction with the magnetization direction of the reference layer;
and the dotted line segment is the resistance change relation in the process of parallel conversion of the magnetization direction of the free layer in the MTJ device from the anti-parallel direction to the forward direction by the external magnetic field, and RHc is the magnitude of the switching magnetic field for converting the magnetization direction of the free layer from the forward direction parallel direction to the anti-parallel direction by the magnetization direction of the reference layer.
And the magnetic parameters Hoffset of the bias field of the MTJ device satisfy the following formulas with LHc and RHc:
when the MTJ device works normally, if Hoffset is greater than 0, that is RHc is greater than LHc, the MTJ device is more easily in a high resistance state; conversely, if Hoffset is greater than 0, that is RHc is less than LHc, the MTJ device is more likely to be in a low resistance state.
For the MTJ device, the Hoffset size is directly related to the balance of the data storage duration of the MTJ device in the high resistance state and the low resistance state, or in the parallel state and the anti-parallel state, and further related to the data storage duration of the MTJ device, and the specific principle is as follows:
data retention time for MTJ devices
Wherein T is the working temperature, E b Represents the barrier height, k B Is the Boltzmann constant, t 0 Is a constant coefficient. It can be seen that the MTJ device has a reduced data retention time with increasing temperature. And the larger the absolute value of the Hoffset value is, the larger the barrier height E b The larger the difference between the parallel state and the anti-parallel state, the larger the difference between the data holding times at high temperature. The MTJ device has the same data retention time for data 0 and 1, so it is more reasonable to minimize the Hoffset value of the MTJ device under high temperature operating conditions.
At present, when an MTJ device is produced and prepared, the Hoffset value of the MTJ device needs to be modulated to be 0 as much as possible, so that the MTJ device does not tend to be in a high resistance state or a low resistance state, and the data storage time of the MTJ device can meet the working requirement. At present, the Hoffset value of the MTJ device is adjusted without excessively considering the influence of the working temperature of the MTJ device, and the Hoffset value of the MTJ device in a normal-temperature working state is only adjusted to be 0 as much as possible, so that the MTJ device is not prone to be in a high-resistance state or a low-resistance state, and the data storage duration of the MTJ device can meet the working requirement. Therefore, in the conventional MTJ device, the Hoffset value of the MTJ device in the normal temperature working state is adjusted to be close to 0, and the stability and reliability of the MTJ device in data storage in the high temperature state cannot be ensured.
Further investigation of the MTJ device may reveal that the magnitude of the Hoffset value of the MTJ device varies with the operating temperature of the MTJ device. Referring to fig. 2, fig. 2 is a box plot diagram of Hoffset value of the MTJ device according to the embodiment of the present application as a function of operating temperature. As shown in fig. 2, the Hoffset value of the MTJ device generally increases with increasing operating temperature. At room temperature, the Hoffset value of the MTJ device sample is around 0Oe, and is about 150Oe at 150 degrees. It is noted that although the MTJ device sample does not tend to be in a parallel state or an antiparallel state at room temperature, it tends to be pinned in a certain state at a high temperature. Therefore, even if the Hoffset value of the MTJ device is adjusted to 0 under normal temperature conditions, the data storage time of the MTJ device in a high-temperature operating state often cannot meet the operating requirement. In addition, the MTJ device inevitably generates heat during actual operation, and therefore, the MTJ device is more often operated at a high temperature. That is, the Hoffset value of the MTJ device is adjusted to 0 at normal temperature, and cannot meet the operation requirement of the MTJ device in most cases.
To this end, the present application provides an MTJ device having a specific structure as shown in fig. 3, specifically including a pinned layer, a reference layer, a barrier layer, and a free layer, which is not much different from the structure of a conventional MTJ device.
In the MTJ device provided in the present application, however, the pinned layer and the reference layer are magnetic layers that, when the MTJ device is in the highest operating temperature state, a difference in net magnetic field generated in the free layer is not greater than a value corresponding to the maximum Hoffset; the maximum Hoffset value is the maximum Hoffset value of the corresponding MTJ device when the data storage time of the MTJ device is not less than the preset time under the preset highest working temperature state.
It should be noted that, for the Hoffset value of the MTJ device, it may be greater than 0 or less than 0, and the data storage duration balance of the MTJ device in the parallel state and the non-parallel state in the present application is greater as the Hoffset value increases and the data storage duration in the two states is greater, and accordingly, the difference between the net magnetic fields generated by the pinned layer and the reference layer in the free layer is also an absolute value, which is not described herein again.
In addition, in practical applications, the temperature of the MTJ device in its operating state varies depending on the application environment and the operating time. In general, the MTJ device has a temperature range in which it can operate, and the highest operating temperature state preset in this application is also the operating state at the highest temperature in the temperature range in which the MTJ device can operate.
In the practical preparation of the MTJ device, the magnetization degrees of the pinned layer and the reference layer are set, so that the magnitude of the net magnetic fields generated by the pinned layer and the reference layer in the free layer is not larger than the maximum Hoffset value, that is, the difference value of the net magnetic fields generated by the pinned layer and the reference layer in the free layer is close to 0 as much as possible.
The magnitude of the Hoffset value for an MTJ device is determined by the difference in the net magnetic fields generated at the free layer by the pinned and reference layers, with Hoffset being equal to the difference between the net magnetic field generated at the free layer by the pinned layer and the net magnetic field generated at the free layer by the reference layer. Therefore, the net magnetic field generated by the free layer of the pinning layer and the reference layer in the MTJ device is set respectively, so that the difference value of the net magnetic fields generated by the free layer of the pinning layer and the reference layer in the MTJ device is close to 0 in the high-temperature working state of the MTJ device, and the problems of short data storage time and easy data loss of the MTJ device under the high-temperature working condition are further avoided.
For a particular implementation in which the pinned and reference layers are set to produce a net magnetic field magnitude in the free layer, this may be accomplished by changing the magnetic moments of the pinned and reference layers. The magnitude of the net magnetic field generated in the free layer by the pinned and reference layers is proportional to the magnitude of the respective magnetic moments.
And the magnetic moment sizes of the pinning layer and the reference layer can be realized by setting the content ratio of iron and cobalt in the pinning layer and the reference layer.
Specifically, in practical application, a plurality of different MTJ devices can be produced, the iron-cobalt content ratio of each pinning layer and the reference layer is the same, and the Hoffset value of each MTJ device under high-temperature conditions is detected respectively. If the Hoffset value of each MTJ device is measured to be less than 0 and the absolute value is too large, the magnetic moment of the pinning layer is too large or the magnetic moment of the reference layer is too small when the magnetic moment of the pinning layer is increased; conversely, if the Hoffset value of each MTJ device is measured to be greater than 0 and the absolute value is too small, it indicates that the pinned layer magnetic moment is too small or the reference layer magnetic moment is too large. Therefore, the proper range of the iron-cobalt content ratio in the pinning layer and the reference layer can be set, so that the Hoffset value of the MTJ device is close to 0 in a high-temperature working state.
As previously describedIn the case of the MTJ device, the Hoffset value increases with an increase in operating temperature. In the MTJ device in the application, the Hoffset value is close to 0 in a high-temperature state, and the Hoffset value of the MTJ device is inevitably greatly deviated from 0Oe in a normal-temperature state. Therefore, in order to ensure the working performance of the MTJ device in a low temperature state, the coercivity of the free layer is further set and adjusted, so that the coercivity of the free layer is slightly larger than that of a conventional MTJ device, and the coercivity Hc of the free layer is increased, where the coercivity of the free layer satisfies the formula:
increasing the coercivity Hc of the free layer can increase the magnitude of the absolute values of LHc and RHc to some extent simultaneously.
Because the absolute values of LHc and RHc are increased, even if the absolute values are unbalanced at low temperature, the stability of the parallel state and the anti-parallel state of the MTJ device can be ensured, and the working performance of the MTJ device at low temperature is ensured on the basis of ensuring the long-time balance of the high-temperature working state of the MTJ device to data storage.
Specifically, the value of Hc can be adjusted by setting the thickness of the reference layer, so that the thickness of the free layer is not less than the preset thickness, and the coercivity of the free layer is not less than the preset value. For example, the thickness of the free layer may be repeatedly adjusted according to actual conditions, so that the coercivity of the MTJ device finally meets the performance requirements for use.
The Hoffset value corresponding to the MTJ device in the high-temperature working state is close to 0, so that the long-time balance performance of the MTJ device in the high-temperature working state can meet the expected requirement, and the working performance of the MTJ device in the high-temperature working state is ensured.
The present application further provides a method for manufacturing an MTJ device, as shown in fig. 4, fig. 4 is a schematic flow diagram of the method for manufacturing an MTJ device according to the embodiment of the present application, where the method may include:
step S1: and predetermining the maximum Hoffset value of the corresponding MTJ device when the MTJ device is in the preset highest working temperature state and the data storage time of the MTJ device is not less than the preset time.
Wherein the Hoffset value of the MTJ device is equal to the difference between the net magnetic fields generated at the free layer by the reference layer and the pinned layer of the MTJ device.
Specifically, the maximum Hoffset value can be determined by analyzing the change corresponding relationship between the data storage duration and the Hoffset value through multiple sets of experimental detection, and then setting the maximum Hoffset value, so that the data storage duration can meet the working requirement when the Hoffset value of the MTJ device is smaller than the maximum Hoffset value.
Step S2: and according to the maximum Hoffset value, the net magnetic field generated by the reference layer and the pinned layer in the MTJ device at the free layer respectively is set.
Because the Hoffset value of the MTJ device is equal to the difference value of the net magnetic fields generated by the reference layer and the pinned layer of the MTJ device in the free layer, the net magnetic fields generated by the reference layer and the pinned layer of the MTJ device in the free layer in the application can be reasonably adjusted based on the net magnetic fields generated by the reference layer and the pinned layer in the free layer in the conventional MTJ device.
At present, in a conventional MTJ device under a high temperature state, if the Hoffset value is negative and greater than a limit value, the magnetic moment of a pinning layer can be reduced or the magnetic moment of a reference layer can be increased;
if Hoffset is positive and greater than the threshold, the pinned layer magnetic moment may be increased or the reference layer magnetic moment may be decreased.
For increasing or decreasing the magnetic moment of the pinned layer and the reference layer, it can be achieved by setting the iron-cobalt content ratio.
Step S3: and setting the preparation parameters of the MTJ device according to the magnitude of the net magnetic field, and forming a reference layer, a pinned layer and a free layer of the MTJ device layer by layer according to the technological process of the MTJ device to obtain the prepared MTJ device.
The preparation method of the MTJ device in the application is the same as that of a conventional MTJ device, and the difference is that when parameters of a pinning layer and a reference layer in the MTJ device are selected, the Hoffset value of the MTJ device is close to 0 when the MTJ device is in a high-temperature working state, so that the data storage duration of the MTJ device in the high-temperature state is ensured, and the working performance of the MTJ device is further ensured.
Optionally, when the parameters of the MTJ device are set in the present application, the coercivity of the free layer of the MTJ device may be further set to be not less than the preset coercivity.
And further, the flat state and the reverse flat state of the MTJ device in a normal-temperature working state can be relatively stable, and the requirements of the working performance of the MTJ device in high-temperature and low-temperature working states are met.
Specifically, the adjustment of the coercivity of the free layer of the MTJ device may be achieved by adjusting the thickness of the free layer in the MTJ device, although other embodiments for adjusting the coercivity of the free layer are not excluded in the present application.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Furthermore, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include the inherent elements. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element. In addition, parts of the above technical solutions provided in the embodiments of the present application, which are consistent with the implementation principles of corresponding technical solutions in the prior art, are not described in detail so as to avoid redundant description.
The principles and embodiments of the present invention are explained herein using specific examples, which are presented only to assist in understanding the method and its core concepts. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.
Claims (9)
1. An MTJ device, comprising: a pinned layer, a reference layer, a barrier layer, and a free layer;
wherein, the pinning layer and the reference layer are magnetic layers corresponding to the maximum Hoffset value, and the difference value of net magnetic fields generated by the free layer is not greater than the maximum Hoffset value when the MTJ device is in the preset highest working temperature state; the maximum Hoffset value is the maximum Hoffset value of the corresponding MTJ device when the data storage duration of the MTJ device is not less than the preset duration in the state of the highest working temperature.
2. The MTJ device of claim 1, wherein the ratio of fe to co in the reference layer is within a first predetermined ratio range and the ratio of fe to co in the pinned layer is within a second predetermined ratio range, such that the difference in net magnetic fields generated by the pinned layer and the reference layer in the free layer is less than the maximum Hoffset value at a highest operating temperature state of the MTJ device.
3. The MTJ device of claim 1, in which the free layer is a magnetic layer having a coercivity that is a preset coercivity.
4. The MTJ device of claim 3, in which a thickness of the free layer is a predetermined thickness such that a coercivity of the free layer is the predetermined coercivity.
5. The MTJ device of claim 1, in which the MTJ device is the free layer, the reference layer and the pinned layer magnetizations are perpendicularly magnetized devices.
6. A method for fabricating an MTJ device, comprising:
predetermining the maximum Hoffset value of the corresponding MTJ device when the MTJ device is in a preset highest working temperature state and the data storage time of the MTJ device is not less than the preset time; wherein the Hoffset value of the MTJ device is equal to the difference in net magnetic fields generated at the free layer by the reference layer and the pinned layer of the MTJ device;
setting the magnitude of net magnetic fields generated by a reference layer and a pinned layer in the MTJ device in a free layer respectively according to the maximum Hoffset value;
and setting preparation parameters of the MTJ device according to the magnitude of the net magnetic field, and forming a reference layer, a pinned layer and a free layer of the MTJ device layer by layer according to the technological process of the MTJ device to obtain the prepared MTJ device.
7. The method of fabricating an MTJ device of claim 6, wherein setting fabrication parameters of the MTJ device according to the magnitude of the net magnetic field comprises:
and setting the content proportion of iron and cobalt in the reference layer in a first preset proportion range according to the magnitude of the net magnetic field, and setting the content proportion of iron and cobalt in the pinning layer in a second preset proportion range.
8. The method of fabricating an MTJ device of claim 6, wherein setting fabrication parameters of the MTJ device according to the magnitude of the net magnetic field comprises:
and setting the coercivity of the free layer of the MTJ device as a preset coercivity.
9. The method of fabricating the MTJ device of claim 6, wherein setting the coercivity of the free layer of the MTJ device to a preset coercivity comprises:
setting the thickness of the free layer to be a preset thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010403425.2A CN111554808B (en) | 2020-05-13 | 2020-05-13 | MTJ device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010403425.2A CN111554808B (en) | 2020-05-13 | 2020-05-13 | MTJ device and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111554808A CN111554808A (en) | 2020-08-18 |
| CN111554808B true CN111554808B (en) | 2022-07-26 |
Family
ID=72006340
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010403425.2A Active CN111554808B (en) | 2020-05-13 | 2020-05-13 | MTJ device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111554808B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003298023A (en) * | 2002-03-29 | 2003-10-17 | Toshiba Corp | Magnetic memory and magnetic memory device |
| JP2007299931A (en) * | 2006-04-28 | 2007-11-15 | Toshiba Corp | Magnetoresistance effect element and magnetic memory |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4504273B2 (en) * | 2005-07-06 | 2010-07-14 | 株式会社東芝 | Magnetoresistive element and magnetic memory |
| US8981503B2 (en) * | 2012-03-16 | 2015-03-17 | Headway Technologies, Inc. | STT-MRAM reference layer having substantially reduced stray field and consisting of a single magnetic domain |
| EP3314676A4 (en) * | 2015-06-26 | 2019-02-20 | Intel Corporation | Perpendicular magnetic memory with symmetric fixed layers |
-
2020
- 2020-05-13 CN CN202010403425.2A patent/CN111554808B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003298023A (en) * | 2002-03-29 | 2003-10-17 | Toshiba Corp | Magnetic memory and magnetic memory device |
| JP2007299931A (en) * | 2006-04-28 | 2007-11-15 | Toshiba Corp | Magnetoresistance effect element and magnetic memory |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111554808A (en) | 2020-08-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10354710B2 (en) | Magnetoelectric random access memory array and methods of operating the same | |
| US5793697A (en) | Read circuit for magnetic memory array using magnetic tunnel junction devices | |
| KR100924443B1 (en) | Magnetoresistance random access memory for improved scalability | |
| US8054675B2 (en) | Variable write and read methods for resistive random access memory | |
| Slaughter et al. | Fundamentals of MRAM technology | |
| US6172904B1 (en) | Magnetic memory cell with symmetric switching characteristics | |
| US7193284B2 (en) | Magnetoresistance effect element, method of manufacture thereof, magnetic storage and method of manufacture thereof | |
| US10832749B2 (en) | Perpendicular magnetic memory with symmetric fixed layers | |
| US6956764B2 (en) | Method of writing to a multi-state magnetic random access memory cell | |
| US20100140726A1 (en) | Method and system for providing magnetic elements having enhanced magnetic anisotropy and memories using such magnetic elements | |
| CN110660435B (en) | MRAM memory cell, array and memory | |
| US7800941B2 (en) | Magnetic memory with magnetic tunnel junction cell sets | |
| CN105280806A (en) | Storage device and storage method thereof | |
| JP5723311B2 (en) | Magnetic tunnel junction device and magnetic memory | |
| CN111554808B (en) | MTJ device and preparation method thereof | |
| Naganuma et al. | Advanced 18 nm Quad-MTJ technology overcomes dilemma of Retention and Endurance under Scaling beyond 2X nm | |
| CN111540827B (en) | Preparation method of MTJ device | |
| Worledge et al. | Materials and devices for reduced switching field toggle magnetic random access memory | |
| Durlam et al. | MRAM memory for embedded and stand alone systems | |
| US9449892B2 (en) | Manufacturing method of magnetic memory device | |
| CN110867511A (en) | Perpendicular magnetized MTJ device | |
| WO2021037246A1 (en) | Control method and device, reading method, storage medium and processor | |
| Chen et al. | Applications of TMR devices in solid state circuits and systems | |
| CN116741217A (en) | Magnetic random access memory cell, read-write method and memory | |
| CN117809711A (en) | Reading circuit of memory |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |