CN111554733A - Device with epitaxial structure of device for improving reverse withstand voltage of power Schottky diode and preparation method thereof - Google Patents
Device with epitaxial structure of device for improving reverse withstand voltage of power Schottky diode and preparation method thereof Download PDFInfo
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- CN111554733A CN111554733A CN202010395256.2A CN202010395256A CN111554733A CN 111554733 A CN111554733 A CN 111554733A CN 202010395256 A CN202010395256 A CN 202010395256A CN 111554733 A CN111554733 A CN 111554733A
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- 238000003780 insertion Methods 0.000 claims abstract description 40
- 230000037431 insertion Effects 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 230000005684 electric field Effects 0.000 claims abstract description 25
- 230000004888 barrier function Effects 0.000 claims abstract description 21
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 6
- 239000010980 sapphire Substances 0.000 claims abstract description 6
- 239000002131 composite material Substances 0.000 claims description 43
- 229910002704 AlGaN Inorganic materials 0.000 claims description 41
- 230000007704 transition Effects 0.000 claims description 13
- 230000010287 polarization Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- 238000005036 potential barrier Methods 0.000 claims description 4
- 230000002708 enhancing effect Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- 238000000407 epitaxy Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 150000004767 nitrides Chemical class 0.000 abstract description 2
- 229910002601 GaN Inorganic materials 0.000 description 34
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 23
- 239000000463 material Substances 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 9
- 238000013461 design Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
- H01L29/66212—Schottky diodes
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Abstract
The invention discloses a device epitaxial structure for improving reverse withstand voltage of a power Schottky diode, which comprises a multilayer nitride semiconductor thin-layer structure which is based on Si or sapphire substrate epitaxy and comprises a top device channel layer, wherein a plurality of transverse high barrier insertion layers are grown in a device buffer layer to form a conforming buffer layer, and a preparation method of the device epitaxial structure is also disclosed. The invention adopts a multilayer high barrier insertion structure, and each high barrier insertion layer is a barrier layer for preventing a barrier electric field from diffusing into the device, thereby realizing the maximum voltage resistance of the device.
Description
Technical Field
The invention relates to a device epitaxial structure for improving reverse withstand voltage of a power Schottky diode and a preparation method thereof, belonging to the technical field of semiconductor materials.
Background
Gallium nitride (GaN), a typical representative of third generation wide bandgap semiconductor materials, has a large bandgap width (3.4eV), a strong breakdown field (3MV/cm), and a high electron saturation drift velocity (3 × 10)7cm/s) and good chemical stability, and is a popular material for developing high-performance power electronic devices. The GaN Schottky power device with excellent performance depends on a high-quality material epitaxy technology, and comprises epitaxy equipment, an epitaxy mechanism, defect generation and inhibition in the material growth process, atomic surface structure reconstruction and other key technologies; and the method also depends on the fine device structure design, and comprises the key technologies of doping structure design, high-voltage-resistant barrier material and structure design, surface modification structure design, electric field regulation design in the device and the like.
Although various researchers have conducted a lot of research on the subject of GaN power schottky diode, at present, the realized device withstand voltage is far lower than the breakdown field strength limit of the material, and the key problem is that the epitaxial structure of the device is still not properly designed, a hot spot region with concentrated electric field is formed, and the performance of the material is limited. The invention provides a novel device epitaxial structure, which offsets and reduces an external electric field reaching a substrate interface and improves the reverse voltage resistance of a device.
Disclosure of Invention
The invention aims to provide a device epitaxial structure for improving reverse withstand voltage of a power Schottky diode, which realizes a polarization electric field in the epitaxial structure, can offset or reduce an externally applied electric field and obtain a high withstand voltage device.
The purpose of the invention is realized by the following technical scheme:
the utility model provides a device epitaxial structure of power schottky diode reverse withstand voltage improves, its structure includes from bottom to top in proper order:
(1) a substrate layer;
(2) a transition layer;
(3) a composite buffer layer;
(4) a channel layer;
(5) a barrier layer.
The method is characterized in that: a plurality of inclined high potential barrier insertion layers are arranged in the composite buffer layer, the potential barrier of each insertion layer points to the substrate from high to low, an upward polarization electric field is generated through stress control, and therefore an external electric field diffused from the top is offset and weakened, and the breakdown voltage of the device is improved.
Preferably, the inclined high barrier insertion layers are AlGaN insertion layers, Al components of each insertion layer are linearly and gradually changed from 0 to 20%, the thickness of each layer is 20 nm-30 nm, all the insertion layers are positioned on one side close to the substrate layer, and the total thickness of the insertion layers is not more than 50% of the total thickness of the composite buffer layer.
Preferably, the thickness of the composite buffer layer is more than 4 microns, the number of the insertion layers is 2-10, and the balance is GaN.
Preferably, the number of intervening layers is 3, each layer being 25nm thick.
Preferably, the substrate layer is a Si substrate or a sapphire substrate.
Preferably, the transition layer is a composite structure of an AlN layer and an AlGaN layer, the AlN layer is close to the substrate, the total thickness is 100 nm-1000 nm, the thickness of the AlN layer is 20 nm-200 nm, and the thickness of the AlGaN layer is 80 nm-800 nm.
Preferably, the channel layer is a composite structure of an i-GaN layer and an AlN layer, the i-GaN layer is close to the composite buffer layer, the thickness is 100 nm-1000 nm, and the thickness of AlN is 1 nm-2 nm.
Preferably, the barrier layer is a composite structure of an AlGaN layer and a GaN layer, the AlGaN layer is close to the channel layer, the Al component is 25% -35%, the thickness is 20 nm-30 nm, and the thickness of the GaN layer is 3 nm-8 nm.
The invention also discloses a preparation method of the epitaxial structure of the device for improving the reverse withstand voltage of the power Schottky diode, which comprises the following steps:
1) extending an AlN/AlGaN transition layer on a Si or sapphire substrate by using an MOCVD method;
2) on the AlN/AlGaN transition layer, a composite buffer layer is grown, an AlGaN insertion layer with gradually changed components is grown firstly, Al components are gradually changed from 0 to 20 percent in a linear mode, a plurality of layers are inserted, then a single GaN layer is grown,
thereby forming a composite buffer layer;
3) growing a composite structure of an i-GaN layer and an AlN layer on the composite buffer layer to serve as a channel layer;
4) and growing a barrier layer on the channel layer, growing an AlGaN layer and then growing a GaN layer.
Generally, each layer of the epitaxial structure of the schottky power device is made of a single material, so that the control is convenient and the high yield is obtained. However, a single material cannot realize internal electric field control, and cannot actively control an externally applied electric field, so that an external electric field is diffused into the device, and the device breaks down due to more defects of the material close to the substrate. One of the keys of the invention is to design a composite buffer layer structure, and generate an upward polarization electric field through stress control, thereby counteracting and weakening an external electric field diffused from the top, and further improving the breakdown voltage of the device.
The mechanism of the invention is that the nitride generates strong piezoelectric polarization when receiving stress, and the direction of the polarization electric field can be adjusted by the stress state. By virtue of lattice matching between AlGaN and GaN, an appropriate stress state can be formed, thereby generating a required internal polarization electric field. In order to meet the requirement of counteracting the external electric field, the inserted polarized AlGaN layer adopts undoped AlGaN, traverses the whole device, and can be a plurality of layers. Due to the design of the AlGaN layer, the large-range diffusion of an electric field can be effectively avoided, the breakdown probability of the device is reduced, and the breakdown voltage of the device is improved. The invention offsets or weakens the electric field distributed in the structure, thereby enhancing the voltage resistance of the device. These are different from the epitaxial structure of the schottky device reported in the past.
Drawings
Fig. 1 is a schematic diagram of the design of the epitaxial structure of the device of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
Example 1
The preparation method of the epitaxial structure of the device for improving the reverse withstand voltage of the power Schottky diode comprises the following steps:
1) on a Si substrate, using a Metal Organic Chemical Vapor Deposition (MOCVD) method to extend an AlN/AlGaN transition layer at a high temperature, wherein the temperature is higher than 1100 ℃;
2) and growing a composite buffer layer on the AlN/AlGaN transition layer at a high temperature, inserting an AlGaN insertion layer with gradually changed growth components in the growth of GaN with the thickness of 50 percent in the first step, linearly changing the Al component from 0 to 20 percent, inserting a plurality of layers, and forming a single GaN layer with the thickness of 50 percent in the last step to form the composite buffer layer.
3) Growing a channel layer, a GaN layer and an AlN layer on the composite buffer layer at a high temperature;
4) and on the channel layer, a barrier layer grows at high temperature, and an AlGaN layer and a GaN layer grow at high temperature are adopted, wherein the GaN layer is arranged at the outermost part.
Example 2
As shown in fig. 1, the epitaxial structure of the device for improving reverse withstand voltage of the power schottky diode sequentially comprises, from bottom to top:
(1) a Si substrate layer;
(2) the transition layer is AlN with the thickness of 100nm and AlGaN with the thickness of 700 nm;
(3) the composite buffer layer is 4 mu m thick, comprises 3 AlGaN insertion layers, wherein the Al component of each insertion layer is linearly and gradually changed from 0 to 20 percent, the thickness of each layer is 25nm, all the insertion layers are positioned at one side close to the substrate layer, the composite buffer layer also comprises a GaN layer, the AlGaN insertion layers are inclined high-barrier insertion layers, the barrier of each insertion layer is directed to the substrate from high to low, and an upward polarization electric field is generated through stress control, so that the attenuation of an external electric field diffused from the top is counteracted, and the breakdown voltage of the device is improved;
(4) the channel layer is of a composite structure of an i-GaN layer and an AlN layer, the i-GaN layer is close to the composite buffer layer, the thickness of the i-GaN layer is 500nm, and the thickness of the AlN layer is 1 nm;
(5) the barrier layer is of a composite structure of an AlGaN layer and a GaN layer, the AlGaN layer is close to the channel layer, the Al component is 27%, the thickness is 27nm, and the thickness of the GaN layer is 5 nm.
Example 3
This improve reverse withstand voltage's of power schottky diode device epitaxial structure, its structure includes from bottom to top in proper order:
(1) a sapphire substrate layer;
(2) the transition layer is AlN with the thickness of 20nm and AlGaN with the thickness of 80 nm;
(3) the composite buffer layer is 5 mu m thick, comprises 2 AlGaN insertion layers, wherein the Al component of each insertion layer is linearly and gradually changed from 0 to 20 percent, the thickness of each layer is 30nm, all the insertion layers are positioned on one side close to the substrate layer, the composite buffer layer also comprises a GaN layer, the AlGaN insertion layers are inclined high-barrier insertion layers, the barrier of each insertion layer is directed to the substrate from high to low, and an upward polarization electric field is generated through stress control, so that the attenuation of an external electric field diffused from the top is counteracted, and the breakdown voltage of the device is improved;
(4) the channel layer is of a composite structure of an i-GaN layer and an AlN layer, the i-GaN layer is close to the composite buffer layer, the thickness of the i-GaN layer is 1000nm, and the thickness of the AlN layer is 2 nm;
(5) the barrier layer is of a composite structure of an AlGaN layer and a GaN layer, the AlGaN layer is close to the channel layer, the Al component is 25%, the thickness is 20nm, and the thickness of the GaN layer is 3 nm.
Example 4
This improve reverse withstand voltage's of power schottky diode device epitaxial structure, its structure includes from bottom to top in proper order:
(1) a Si substrate layer;
(2) the transition layer is AlN with the thickness of 200nm and AlGaN with the thickness of 800 nm;
(3) the composite buffer layer is 5.5 mu m thick, comprises 10 AlGaN insertion layers, wherein the Al component of each insertion layer is linearly and gradually changed from 0 to 20 percent, the thickness of each layer is 20nm, all the insertion layers are positioned on one side close to the substrate layer, the composite buffer layer also comprises a GaN layer, the AlGaN insertion layers are inclined high-barrier insertion layers, the barrier of each insertion layer is directed to the substrate from high to low, and an upward polarization electric field is generated through stress control, so that the attenuation of an external electric field diffused from the top is counteracted, and the breakdown voltage of the device is improved;
(4) the channel layer is of a composite structure of an i-GaN layer and an AlN layer, the i-GaN layer is close to the composite buffer layer, the thickness of the i-GaN layer is 100nm, and the thickness of the AlN layer is 1.5 nm;
(5) the barrier layer is of a composite structure of an AlGaN layer and a GaN layer, the AlGaN layer is close to the channel layer, the Al component is 35%, the thickness is 30nm, and the thickness of the GaN layer is 8 nm.
Claims (9)
1. The utility model provides a device epitaxial structure of power schottky diode reverse withstand voltage improves, its structure includes from bottom to top in proper order:
(1) a substrate layer;
(2) a transition layer;
(3) a composite buffer layer;
(4) a channel layer;
(5) a barrier layer.
The method is characterized in that: a plurality of inclined high potential barrier insertion layers are arranged in the composite buffer layer, the potential barrier of each insertion layer points to the substrate from high to low, and an upward polarization electric field is generated through stress control.
2. The epitaxial structure of a device for improving reverse withstand voltage of a power Schottky diode according to claim 1, wherein: the inclined high barrier insertion layers are AlGaN insertion layers, Al components of each insertion layer are linearly and gradually changed from 0 to 20%, the thickness of each layer is 20 nm-30 nm, all the insertion layers are positioned on one side close to the substrate layer, and the total thickness of the insertion layers is not more than 50% of the total thickness of the composite buffer layer.
3. The epitaxial structure of the device for improving reverse withstand voltage of the power Schottky diode according to claim 2, wherein: the thickness of the composite buffer layer is more than 4 microns, the number of the insertion layers is 2-10, and the balance is GaN.
4. The epitaxial structure of the device for improving the reverse withstand voltage of the power Schottky diode according to claim 3, wherein: the number of intervening layers was 3 layers, each 25nm thick.
5. The epitaxial structure of a device for improving reverse withstand voltage of a power Schottky diode according to claim 1, wherein: the substrate layer is a Si substrate or a sapphire substrate.
6. The epitaxial structure of a device for improving reverse withstand voltage of a power Schottky diode according to claim 1, wherein: the transition layer is of a composite structure of an AlN layer and an AlGaN layer, the AlN layer is close to the substrate, the total thickness is 100 nm-1000 nm, the AlN layer is 20 nm-200 nm thick, and the AlGaN layer is 80 nm-800 nm thick.
7. The epitaxial structure of a device for improving reverse withstand voltage of a power Schottky diode according to claim 1, wherein: the channel layer is of a composite structure of an i-GaN layer and an AlN layer, the i-GaN layer is close to the composite buffer layer, the thickness of the i-GaN layer is 100 nm-1000 nm, and the thickness of the AlN layer is 1 nm-2 nm.
8. The epitaxial structure of a device for improving reverse withstand voltage of a power Schottky diode according to claim 1, wherein: the barrier layer is of a composite structure of an AlGaN layer and a GaN layer, the AlGaN layer is close to the channel layer, the Al component is 25% -35%, the thickness is 20 nm-30 nm, and the thickness of the GaN layer is 3 nm-8 nm.
9. A method of fabricating a power schottky diode reverse withstand voltage enhancing device epitaxial structure as claimed in claims 1 to 8, comprising the steps of:
1) extending an AlN/AlGaN transition layer on a Si or sapphire substrate by using an MOCVD method;
2) growing a composite buffer layer on the AlN/AlGaN transition layer, firstly growing an AlGaN insertion layer with gradually changed components, inserting multiple layers of Al components, and then growing a single GaN layer to form the composite buffer layer;
3) growing a composite structure of an i-GaN layer and an AlN layer on the composite buffer layer to serve as a channel layer;
4) and growing a barrier layer on the channel layer, growing an AlGaN layer and then growing a GaN layer.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007165719A (en) * | 2005-12-15 | 2007-06-28 | Nippon Telegr & Teleph Corp <Ntt> | Nitride semiconductor element |
| CN101390201A (en) * | 2005-12-28 | 2009-03-18 | 日本电气株式会社 | Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor |
| CN103400865A (en) * | 2013-07-31 | 2013-11-20 | 中国电子科技集团公司第十三研究所 | Polarization doping-based GaN Schottky diode |
| CN109830535A (en) * | 2018-11-23 | 2019-05-31 | 厦门市三安集成电路有限公司 | High resistant gallium nitride base buffer layer and preparation method with nanometer step graded bed |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007165719A (en) * | 2005-12-15 | 2007-06-28 | Nippon Telegr & Teleph Corp <Ntt> | Nitride semiconductor element |
| CN101390201A (en) * | 2005-12-28 | 2009-03-18 | 日本电气株式会社 | Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor |
| CN103400865A (en) * | 2013-07-31 | 2013-11-20 | 中国电子科技集团公司第十三研究所 | Polarization doping-based GaN Schottky diode |
| CN109830535A (en) * | 2018-11-23 | 2019-05-31 | 厦门市三安集成电路有限公司 | High resistant gallium nitride base buffer layer and preparation method with nanometer step graded bed |
Non-Patent Citations (1)
| Title |
|---|
| 蒋超 等: "Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate", 《CHIN.PHYS.B》 * |
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