CN111554563B - Epitaxial structure manufacturing method and epitaxial structure - Google Patents

Epitaxial structure manufacturing method and epitaxial structure Download PDF

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CN111554563B
CN111554563B CN201910110404.9A CN201910110404A CN111554563B CN 111554563 B CN111554563 B CN 111554563B CN 201910110404 A CN201910110404 A CN 201910110404A CN 111554563 B CN111554563 B CN 111554563B
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matching layer
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CN111554563A (en
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谈科伟
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Dynax Semiconductor Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
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    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

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Abstract

The application provides an epitaxial structure manufacturing method and an epitaxial structure, and relates to the technical field of semiconductors. The manufacturing method of the epitaxial structure comprises the following steps: providing a plurality of substrates, and classifying the plurality of substrates based on warpage to obtain at least one substrate group, wherein the warpage of each substrate in the same substrate group belongs to the same preset range, and the warpage of each substrate in different substrate groups belongs to different preset ranges; obtaining at least two substrates in a group of substrates; and epitaxially growing a matching layer on one surface of each of the at least two substrates by the same equipment and the same process, so as to adjust the warping degree of the substrate through the stress formed between the matching layer and the substrate. By the method, the problem that the uniformity among all epitaxial structures obtained by epitaxial growth through the same equipment and the same process in the prior art is poor can be solved.

Description

Epitaxial structure manufacturing method and epitaxial structure
Technical Field
The application relates to the technical field of semiconductors, in particular to an epitaxial structure manufacturing method and an epitaxial structure.
Background
Among semiconductor devices, in particular, GaN photoelectric devices and power devices, Si, SiC, and Sapphire (Sapphire) are mainly used as substrates. In an actual production process, a batch epitaxial growth is generally performed on the basis of a plurality of substrates in the same apparatus (e.g., MOCVD apparatus) and the same process (e.g., MOCVD process).
The inventor researches and discovers that a part of substrates with certain warpage generally exist in a plurality of substrates, and the difference between the warpage of different substrates can be larger, especially the warpage difference is larger when the substrates are recycled. Therefore, when the warpage of each substrate is not uniform, there is a problem that the uniformity is poor between epitaxial structures obtained by epitaxial growth on the basis of each substrate. Moreover, this problem may not only reduce the yield of the overall epitaxial structure, but also increase the manufacturing cost due to the need of an additional device screening process.
Disclosure of Invention
In view of the above, an object of the present invention is to provide an epitaxial structure manufacturing method and an epitaxial structure, so as to solve the problem in the prior art that uniformity is poor among epitaxial structures obtained by performing epitaxial growth in the same equipment and the same process.
In order to achieve the above purpose, the embodiment of the present application adopts the following technical solutions:
a method of fabricating an epitaxial structure, comprising:
providing a plurality of substrates, and classifying the plurality of substrates based on warpage to obtain at least one substrate group, wherein the warpage of each substrate in the same substrate group belongs to the same preset range, and the warpage of each substrate in different substrate groups belongs to different preset ranges;
obtaining at least two substrates in a group of substrates;
and epitaxially growing a matching layer on one surface of each of the at least two substrates by the same equipment and the same process, so as to adjust the warping degree of the substrate through the stress formed between the matching layer and the substrate.
In a preferred option of the embodiment of the present application, in the above method for manufacturing an epitaxial structure, the materials of the substrates in the same substrate group are the same, and the method further includes:
determining an epitaxial growth parameter in advance based on the material corresponding to each substrate group and the preset range corresponding to the substrate group, wherein the epitaxial growth parameters determined based on different materials and different preset ranges are different;
the step of forming a corresponding matching layer on one surface of each of the at least two substrates by epitaxial growth through the same equipment and the same process comprises the following steps:
Obtaining predetermined epitaxial growth parameters of the at least two substrates;
and growing a matching layer on one surface of each of the at least two substrates according to the obtained epitaxial growth parameters by the same equipment and the same process.
In a preferred option of the embodiment of the present invention, in the method for manufacturing an epitaxial structure, the step of predetermining an epitaxial growth parameter based on the material corresponding to each substrate group and the predetermined range corresponding to the substrate group specifically includes:
the thickness of the matching layer is predetermined based on the material corresponding to each substrate group and the preset range corresponding to the substrate group, wherein the matching layer comprises a nucleation layer and/or a buffer layer, the thickness of the nucleation layer is 10-200 nm, and the thickness of the buffer layer is 0.5-2 μm.
In a preferred option of the embodiment of the present application, in the method for manufacturing an epitaxial structure, the step of predetermining the thickness of the matching layer based on the material corresponding to each substrate group and the preset range corresponding to the substrate group includes:
determining the type of stress required to be provided by the matching layer based on the material of the substrate group and the material of the matching layer, wherein the stress comprises compressive stress and tensile stress;
If the matching layer is required to provide compressive stress, determining the thickness of the matching layer according to a first preset relation and a preset range corresponding to the substrate group, wherein when the thickness of the matching layer is determined based on the first preset relation, the thickness of the matching layer corresponding to a preset range with a larger warping degree is smaller than the thickness of the matching layer corresponding to a preset range with a smaller warping degree in any two preset ranges;
and if the matching layer is required to provide tensile stress, determining the thickness of the matching layer according to a second preset relation and a preset range corresponding to the substrate group, wherein when the thickness of the matching layer is determined based on the second preset relation, the thickness of the matching layer corresponding to a preset range with a larger warping degree is larger than the thickness of the matching layer corresponding to a preset range with a smaller warping degree in any two preset ranges.
In a preferred option of the embodiment of the present application, in the method for manufacturing an epitaxial structure, the method further includes:
epitaxially growing a channel layer with the thickness of 0.1-0.5 mu m on one surface of each matching layer far away from the substrate;
epitaxially growing a barrier layer with the thickness of 10-50 nm on one surface of each channel layer far away from the matching layer;
And epitaxially growing a cap layer with the thickness of 1-10 nm on one surface of each barrier layer far away from the channel layer.
A method of fabricating an epitaxial structure, comprising:
providing at least two substrates including a first substrate and a second substrate, wherein the first substrate has a first warp degree and the second substrate has a second warp degree different from the first warp degree;
when the first warping degree and the second warping degree belong to different preset ranges, a first matching layer is formed by growing on the first substrate and a second matching layer is formed by growing on the second substrate through different equipment and/or different processes, so that the warping degree of the first substrate is adjusted through stress formed between the first matching layer and the first substrate, and the warping degree of the second substrate is adjusted through stress formed between the second matching layer and the second substrate.
In a preferred option of the embodiment of the present application, in the above method for manufacturing an epitaxial structure, when the first warpage and the second warpage belong to different preset ranges, the step of growing a first matching layer on the first substrate and a second matching layer on the second substrate respectively by using different equipment and/or different processes includes:
When the first warping degree and the second warping degree belong to different preset ranges, matching a first epitaxial growth parameter with the first warping degree, and matching a second epitaxial growth parameter with the second warping degree, wherein the first epitaxial growth parameter is different from the second epitaxial growth parameter;
and respectively growing on the first substrate to form a first matching layer based on the first epitaxial growth parameters and growing on the second substrate to form a second matching layer based on the second epitaxial growth parameters through different equipment and/or different processes, wherein after epitaxial growth, the first substrate has a third warping degree, the second substrate has a fourth warping degree, and the warping difference value of the third warping degree and the fourth warping degree is smaller than that of the first warping degree and the second warping degree.
In a preferred choice of this embodiment of the present application, in the method for manufacturing an epitaxial structure, each of the first epitaxial growth parameter and the second epitaxial growth parameter includes a thickness of a matching layer, each of the first matching layer and the second matching layer includes a nucleation layer and/or a buffer layer, the thickness of the nucleation layer is 10 to 200nm, and the thickness of the buffer layer is 0.5 to 2 μm.
In a preferred option of the embodiment of the present application, in the above method for manufacturing an epitaxial structure, if the first warpage is greater than the second warpage and the first matching layer and the second matching layer are required to provide compressive stress, the thickness of the first matching layer is smaller than that of the second matching layer;
if the first warping degree is larger than the second warping degree and the first matching layer and the second matching layer are required to provide tensile stress, the thickness of the first matching layer is larger than that of the second matching layer.
In a preferred option of the embodiment of the present application, in the method for manufacturing an epitaxial structure, the method further includes:
epitaxially growing a first channel layer with the thickness of 0.1-0.5 mu m on one surface of the first matching layer far away from the first substrate, and epitaxially growing a second channel layer with the thickness of 0.1-0.5 mu m on one surface of the second matching layer far away from the second substrate;
epitaxially growing a first barrier layer with the thickness of 10-50 nm on one surface of the first channel layer, which is far away from the first matching layer, and epitaxially growing a second barrier layer with the thickness of 10-50 nm on one surface of the second channel layer, which is far away from the second matching layer;
And epitaxially growing a first cap layer with the thickness of 1-10 nm on one surface of the first barrier layer, which is far away from the first channel layer, and epitaxially growing a second cap layer with the thickness of 1-10 nm on one surface of the second barrier layer, which is far away from the second channel layer.
On the basis of the above, the embodiments of the present application further provide an epitaxial structure, which is manufactured and formed by the above epitaxial structure manufacturing method.
The application provides an epitaxial structure manufacturing method and epitaxial structure, carry out the growth of epitaxial layer through two at least substrates with the angularity belong to same predetermined scope in same equipment and same technology, can make the difference between two at least epitaxial structures that obtain less, the homogeneity is higher, thereby improve and have the relatively poor problem of homogeneity because of there is great difference in the angularity that corresponds the substrate in the same equipment among the prior art, each epitaxial structure that same technology carries out epitaxial growth and obtains, the yield of epitaxial structure manufacturing has been guaranteed effectively, and, can also avoid screening each epitaxial structure that obtains and lead to the problem that manufacturing cost increases because of needing the later stage, have high use value.
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
Fig. 1 is a schematic structural diagram of a substrate with a certain warpage according to an embodiment of the present disclosure.
Fig. 2 is another schematic structural diagram of a substrate with a certain warpage according to an embodiment of the present disclosure.
Fig. 3 is a schematic flow chart of a method for manufacturing an epitaxial structure according to an embodiment of the present disclosure.
Fig. 4 is a schematic diagram illustrating the effect of the method for manufacturing the epitaxial structure shown in fig. 3 (the matching layer is grown in the same equipment and the same process).
Fig. 5 is a schematic diagram illustrating another effect of the method for manufacturing an epitaxial structure (different compositions of the matching layer) according to the embodiment of the present application.
Fig. 6 is a schematic view of another effect of the method for manufacturing an epitaxial structure (growth of a channel layer, a barrier layer, and a cap layer) according to the embodiment of the present application.
Fig. 7 is a schematic flow chart illustrating another method for fabricating an epitaxial structure according to an embodiment of the present disclosure.
Fig. 8 is a schematic view illustrating an effect of the method for manufacturing the semiconductor device shown in fig. 7.
Fig. 9 is a flowchart illustrating sub-steps included in step S220 in fig. 7.
FIG. 10 is a schematic diagram illustrating the effect of growing the matching layer shown in FIG. 9.
Icon: 110-a substrate; 111-a first substrate; 112-a second substrate; 120-matching layer; 120 a-first matching layer; 120 b-a second matching layer; 121-a nucleation layer; 123-a buffer layer; 130-a channel layer; 140-barrier layer; 150-cap layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all the embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. In the description of the present application, the terms "first," "second," "third," "fourth," and the like are used merely to distinguish one description from another, and are not to be construed as merely or implying relative importance.
As shown in fig. 1 and fig. 2, in the embodiment of the present application, in order to avoid a problem that an epitaxial structure obtained by performing epitaxial growth on a substrate 110 with a large difference in warpage (for example, a part of the substrate 110 belonging to a first-time use, and a part of the substrate 110 belonging to a recycled and reused substrate) through the same apparatus and the same process has poor uniformity, each substrate 110 with a warpage in the same preset range may be subjected to corresponding epitaxial growth in the same apparatus and the same process, or each substrate 110 with a warpage in different preset ranges may be subjected to corresponding epitaxial growth in different apparatuses and/or different processes. Therefore, based on the two concepts, the present application provides two embodiments, which are the first embodiment and the second embodiment, respectively, and the specific contents are as follows.
It should be noted that, in the embodiments provided in the present application, the "same process" refers to the same process, that is, the respective substrates 110 are subjected to the corresponding epitaxial growth according to the same epitaxial growth parameters in the same apparatus within a period of time. Here, "warp" refers to the maximum distance between two points of the substrate 110 in the thickness direction (e.g., "h" in fig. 1 and 2). Also, a plurality of warpage degrees may be provided on one substrate 110, that is, the same or different warpage degrees may be respectively formed in different regions, for example, a convex structure is formed in a partial region, and a concave structure is formed in a partial region.
Example one
As shown in fig. 3 and 4, an embodiment of the present application provides a method for manufacturing an epitaxial structure, which may include step S110, step S120, and step S130, which are described in detail below.
Step S110, providing a plurality of substrates 110, and classifying the plurality of substrates 110 based on warpage to obtain at least one substrate group.
In the present embodiment, after obtaining a plurality of substrates 110, each substrate 110 may be measured to obtain the warp of each substrate 110. Then, the substrates 110 are classified based on their warpage to obtain at least one substrate group.
The warp of each substrate 110 in the same substrate group belongs to the same preset range, and the warp of each substrate 110 in different substrate groups belongs to different preset ranges. It is understood that, especially when the number of the substrates 110 whose warpage falls within a predetermined range is large, the substrate group corresponding to the predetermined range may be divided again to obtain at least two sub-substrate groups for the convenience of production management.
For example, if there are 200 substrates 110 with warpage of 10-20 μm, 100 substrates 110 can be divided into a first sub-substrate group, and the other 100 substrates 110 can be divided into a second sub-substrate group.
It should be noted that the dividing manner of the preset range is not limited, and may be selected according to the actual application requirement, for example, the degree of the requirement on the uniformity may be correspondingly selected. Specifically, when the requirement on uniformity is high, a large number of preset ranges may be divided, so that the coverage range of each preset range is small, for example, one preset range may be divided every 5 μm; when the requirement for uniformity is low, a small number of preset ranges can be divided, so that the coverage range of each preset range is large, for example, one preset range can be divided every 20 μm.
In the present embodiment, the inventors have conducted long-term experimental studies to provide a practical example in which the predetermined range can be divided every 10 μm by comprehensively considering the possible value of warp and effectively ensuring uniformity between epitaxial structures to be manufactured. Correspondingly, the following preset ranges of-20 to-10 μm, -10 to 0 μm, 0 to 10 μm and 10 to 20 μm can be obtained.
Step S120, at least two substrates 110 are acquired in one substrate group.
In this embodiment, after the at least one substrate group is obtained in step S110, at least two substrates 110 may be obtained from one substrate group, so as to manufacture an epitaxial structure based on the at least two substrates 110.
The specific number of the acquisition substrates 110 is not limited, and may be selected according to the available capacity and supply demand of the corresponding equipment, and may be, for example, 2, 10, 50, etc.
Step S130, forming a matching layer 120 on one side of each substrate 110 of the at least two substrates 110 by epitaxial growth in the same equipment and the same process.
In this embodiment, after the step S120 is performed to obtain at least two substrates 110 belonging to the same substrate group, a matching layer 120 may be formed by epitaxial growth on one surface of each substrate 110 of the at least two substrates 110 through the same equipment and the same process, so as to adjust the warpage of the substrate 110 through the stress formed between the matching layer 120 and the substrate 110. Since the warp degrees of the at least two substrates 110 belong to the same preset range, the difference between the warp degrees of the at least two substrates 110 can be effectively controlled, so that the epitaxial structures manufactured based on the at least two substrates 110 have higher uniformity.
It should be noted that the epitaxial growth parameters for growing the matching layers 120 in the same equipment and the same process are the same, that is, the adjustment capability of the matching layers 120 formed in the same equipment and the same process for the warpage of the substrates 110 is the same, so if the difference between the warpage of the substrates 110 is large (for example, a part of the substrate 110 is used for the first time, and a part of the substrate 110 is reused and recycled through chemical etching and physical polishing), the problems that the warpage of a part of the substrate 110 can be effectively adjusted, and the warpage of a part of the substrate 110 cannot be effectively adjusted to cause poor performance of the corresponding epitaxial structure, thereby causing low yield of the epitaxial structure manufacturing may exist when the same epitaxial growth parameters are used.
Therefore, in the present embodiment, in order to further improve the yield of the epitaxial structure manufacturing, different epitaxial growth parameters may be predetermined for different preset ranges, so as to avoid the problem of low yield of the epitaxial structure manufacturing due to the mismatch between the warpage and the epitaxial growth parameters.
For example, in one possible example, the matched epitaxial growth parameters may also be different in view of the different materials of the substrate 110. Therefore, when step S110 is performed, it is also possible to classify the substrates 110 according to their materials so that the materials of the substrates 110 in the same substrate group are the same. Also, before performing step S130, the semiconductor manufacturing method may further include the steps of: and determining an epitaxial growth parameter in advance based on the material corresponding to each substrate group and the preset range corresponding to the substrate group, wherein the epitaxial growth parameters determined based on different materials and different preset ranges are different.
Correspondingly, step S130 may comprise the following sub-steps: obtaining predetermined epitaxial growth parameters of the at least two substrates 110; and growing a matching layer 120 on one surface of each substrate 110 of the at least two substrates 110 according to the obtained epitaxial growth parameters by the same equipment and the same process.
It should be noted that the material of the substrate 110 is not limited, and may be selected according to the requirements of the actual application. For example, the material of the substrate 110 may include, but is not limited to, sapphire, Si, SOI, SiC, GaN, AlN, LiNbO 3 Rare earth oxides, and other materials suitable for growing nitrides.
In addition, the specific content of the epitaxial growth parameters is not limited, and may be selected according to the actual application requirements as long as the warp of the substrate 110 can be effectively adjusted. For example, the temperature, thickness, and composition of Al with Al in the material of the matching layer 120 at which the matching layer 120 is grown may include, but is not limited to.
For example, in an alternative example, the epitaxial growth parameters may include the thickness of the matching layer 120, that is, by forming the matching layer 120 with different thicknesses, different stresses are provided to the substrate 110, and thus the warpage of the substrate 110 is adjusted adaptively.
The content of the epitaxial growth parameters may also be different according to the specific structure of the matching layer 120. For example, in conjunction with fig. 5, the matching layer 120 may include a nucleation layer 121 and/or a buffer layer 123. That is, when the matching layer 120 is composed of the nucleation layer 121, the epitaxial growth parameter may be a thickness of the nucleation layer 121; when the matching layer 120 is composed of the buffer layer 123, the epitaxial growth parameter may be a thickness of the buffer layer 123; when the matching layer 120 is composed of the nucleation layer 121 and the buffer layer 123, the epitaxial growth parameters may include a thickness of the nucleation layer 121 and a thickness of the buffer layer 123.
In addition, in order to avoid the overall thickness of the epitaxial structure being large and to effectively adjust the warpage of the substrate 110, the thickness of the nucleation layer 121 may be 10 to 200nm, and the thickness of the buffer layer 123 may be 0.5 to 2 μm. That is, in one specific example, the step of growing the matching layer 120 may include: a nucleation layer 121 with the thickness of 10-200 nm is formed on one surface of the substrate 110 through epitaxial growth, and then a buffer layer 123 with the thickness of 0.5-2 μm is formed on one surface of the nucleation layer 121 far away from the substrate 110 through epitaxial growth, so as to form the matching layer 120 comprising the nucleation layer 121 and the buffer layer 123.
It should be noted that, when the epitaxial growth parameters include the thickness of the matching layer, the step of determining the thickness of the matching layer may include: determining the type of stress required to be provided by the matching layer based on the material of the substrate group and the material of the matching layer, wherein the stress comprises compressive stress and tensile stress; if the matching layer is required to provide compressive stress, determining the thickness of the matching layer according to a first preset relation and a preset range corresponding to the substrate group, wherein when the thickness of the matching layer is determined based on the first preset relation, the thickness of the matching layer corresponding to a preset range with a larger warping degree is smaller than the thickness of the matching layer corresponding to a preset range with a smaller warping degree in any two preset ranges; and if the matching layer is required to provide tensile stress, determining the thickness of the matching layer according to a second preset relation and a preset range corresponding to the substrate group, wherein when the thickness of the matching layer is determined based on the second preset relation, the thickness of the matching layer corresponding to a preset range with a larger warping degree is larger than the thickness of the matching layer corresponding to a preset range with a smaller warping degree in any two preset ranges.
When the matching layer comprises a nucleation layer and a buffer layer, the type of stress required to be provided by the nucleation layer can be determined based on the materials of the substrate and the nucleation layer, and the type of stress required to be provided by the buffer layer can be determined based on the materials of the nucleation layer and the buffer layer.
Specifically, in one possible example, when the epitaxial growth parameters include the thickness of the nucleation layer 121, the following correspondence may be made:
when the substrate is made of Si and the warping degree is-20 to-10 mu m, the nucleating layer is made of AlN and the thickness of the nucleating layer is 13 to 18nm (such as 15nm), so that the nucleating layer provides tensile stress;
when the substrate is made of Si and the warping degree is-10-0 mu m, the nucleating layer is made of AlN and the thickness of the nucleating layer is 18-23 nm (such as 20nm), so that tensile stress is provided by the nucleating layer;
when the substrate is made of Si and the warping degree is 0-10 mu m, the nucleating layer is made of AlN and the thickness of the nucleating layer is (such as 25nm), so that tensile stress is provided by the nucleating layer;
when the substrate is made of Si and the warping degree is 10-20 mu m, the nucleating layer is made of AlN and has a thickness of 28-33 nm (such as 30nm) so as to provide tensile stress for the nucleating layer;
When the substrate is made of SiC and the warping degree is-20 to-10 mu m, the nucleating layer is made of AlN and the thickness of the nucleating layer is 65 to 75nm (such as 70nm), so that the nucleating layer provides compressive stress;
when the substrate is made of SiC and the warping degree is-10-0 mu m, the nucleating layer is made of AlN and the thickness of the nucleating layer is 55-65 nm (such as 60nm), so that the nucleating layer provides compressive stress;
when the substrate is made of SiC and the warping degree is 0-10 mu m, the nucleating layer is made of AlN and the thickness of the nucleating layer is 45-55 nm (such as 50nm), so that the nucleating layer provides compressive stress;
when the substrate is made of SiC and the warping degree is 10-20 mu m, the nucleating layer is made of AlN and the thickness of the nucleating layer is 35-45 nm (such as 40nm), so that the nucleating layer provides compressive stress;
when the substrate is made of sapphire and the warping degree is-20 to-10 mu m, the nucleating layer is made of GaN and the thickness of the nucleating layer is 13 to 18nm (such as 15nm) so as to provide tensile stress for the nucleating layer;
when the substrate is made of sapphire and the warping degree is-10-0 mu m, the nucleating layer is made of GaN and the thickness of the nucleating layer is 18-23 nm (such as 20nm), so that tensile stress is provided for the nucleating layer;
When the substrate is made of sapphire and the warping degree is 0-10 mu m, the nucleating layer is made of GaN and the thickness of the nucleating layer is 23-28 nm (such as 25nm) so as to provide tensile stress for the nucleating layer;
when the substrate is made of sapphire and the warping degree is 10-20 mu m, the nucleating layer is made of GaN and the thickness of the nucleating layer is 28-33 nm (such as 30nm) so as to provide tensile stress for the nucleating layer.
When the epitaxial growth parameters include the thickness of the buffer layer 123, the following correspondence may be made:
when the substrate is made of Si and the warping degree is-20 to-10 mu m, the buffer layer is made of AlGaN and has a thickness of 1.6 to 1.8 mu m (such as 1.7 mu m) so as to provide compressive stress for the buffer layer;
when the substrate is made of Si and the warping degree is-10-0 mu m, the buffer layer is made of AlGaN and has a thickness of 1.4-1.6 mu m (such as 1.5 mu m) so as to provide compressive stress for the buffer layer;
when the substrate is made of Si and the warping degree is 0-10 mu m, the buffer layer is made of AlGaN and has a thickness of 1.2-1.4 mu m (such as 1.3 mu m) so as to provide compressive stress for the buffer layer;
when the substrate is made of Si and the warping degree is 10-20 mu m, the buffer layer is made of AlGaN and has a thickness of 1-1.2 mu m (such as 1.1 mu m) so as to provide compressive stress for the buffer layer;
When the substrate is made of SiC and the warping degree is-20 to-10 mu m, the buffer layer is made of GaN and the thickness of the buffer layer is 1.4 to 1.6 mu m (such as 1.5 mu m), so that the buffer layer provides compressive stress;
when the substrate is made of SiC and the warping degree is-10-0 mu m, the buffer layer is made of GaN and the thickness of the buffer layer is 1.2-1.4 mu m (such as 1.3 mu m), so that the buffer layer provides compressive stress;
when the substrate is made of SiC and the warping degree is 0-10 mu m, the buffer layer is made of GaN and the thickness of the buffer layer is 1-1.2 mu m (such as 1.1 mu m), so that the buffer layer provides compressive stress;
when the substrate is made of SiC and the warping degree is 10-20 mu m, the buffer layer is made of GaN and the thickness of the buffer layer is 0.8-1 mu m (such as 0.9 mu m), so that the buffer layer provides compressive stress;
when the substrate is made of sapphire and the warping degree is-20 to-10 mu m, the buffer layer is made of GaN and the thickness of the buffer layer is 0.8 to 1 mu m (such as 0.9 mu m), so that the buffer layer provides tensile stress;
when the substrate is made of sapphire and the warping degree is-10-0 mu m, the buffer layer is made of GaN and the thickness of the buffer layer is 1-1.2 mu m (such as 1.1 mu m), so that tensile stress is provided by the buffer layer;
When the substrate is made of sapphire and the warping degree is 0-10 mu m, the buffer layer is made of GaN and the thickness of the buffer layer is 1.2-1.4 mu m (such as 1.3 mu m), so that tensile stress is provided by the buffer layer;
when the substrate is made of sapphire and the warping degree is 10-20 mu m, the buffer layer is made of GaN and the thickness of the buffer layer is 1.4-1.6 mu m (such as 1.5 mu m), so that the buffer layer provides tensile stress.
It should be noted that the above examples are only exemplary to illustrate some of the contents of the epitaxial growth parameters. For example, the material of the nucleation layer 121 may also be AlGaN or other semiconductor materials, or may also be a combination of different materials; the material of the buffer layer 123 may also be AlN, InAlN, InAlGaN, or other semiconductor material, or may also be a combination of different materials. Correspondingly, the thicknesses of the nucleation layer 121 and the buffer layer 123 to be grown may be different based on the materials of the nucleation layer 121 and the buffer layer 123.
Also, the buffer layer 123 may further contain a doping impurity to form the high-resistance buffer layer 123.
Further, after the matching layer 120 is manufactured, since the warpage of the substrate 110 is effectively adjusted, the surface of the matching layer 120 away from the substrate 110 is also relatively flat, and therefore, in conjunction with fig. 6, the channel layer 130, the barrier layer 140, and the cap layer 150 may be grown based on the surface of the matching layer 120 away from the substrate 110.
Specifically, the epitaxial structure method may further include the steps of: forming a channel layer 130 by epitaxial growth on a side of each matching layer 120 away from the substrate 110; epitaxially growing a barrier layer 140 on a side of each of the channel layers 130 away from the matching layer 120; a cap layer 150 is epitaxially grown on a side of each barrier layer 140 away from the channel layer 130.
Wherein a side of the channel layer 130 away from the matching layer 120 is used to provide a channel for movement of Two-Dimensional Electron Gas (2 DEG) formed between the channel layer 130 and the barrier layer 140. The cap layer 150 is used to passivate the surface of the barrier layer 140 to protect the barrier layer 140.
Optionally, the thicknesses of the channel layer 130, the barrier layer 140, and the cap layer 150 are not limited, and may be selected according to practical application requirements, for example, the thickness of the channel layer 130 may be 0.1 to 0.5 μm, the thickness of the barrier layer 140 may be 10 to 50nm, and the thickness of the cap layer 150 may be 1 to 10 nm.
The materials of the channel layer 130, the barrier layer 140 and the cap layer 150 are not limited, and may be selected according to the practical application requirements. For example, the material of the channel layer 130 may be at least one of GaN, AlN, InAlN, AlGaN, InAlGaN, or other semiconductor materials, the material of the barrier layer 140 may be at least one of AlN, InAlN, AlGaN, InAlGaN, or other semiconductor materials, and the material of the cap layer 150 may be at least one of GaN or other semiconductor materials.
In the barrier layer 140, the mass ratio of the Al component may be 20% to 30%.
Example two
With reference to fig. 7 and 8, another method for manufacturing an epitaxial structure is further provided in the embodiments of the present application, which may include step S210 and step S220, and the details are as follows.
Step S210, providing at least two substrates including a first substrate 111 and a second substrate 112.
In this embodiment, the first substrate 111 may have a first warpage (e.g., h1 in fig. 8), the second substrate 112 may have a second warpage (e.g., h2 in fig. 8), and the first warpage is different from the second warpage.
The at least two substrates may further include other substrates, and the warpage of the substrate may be the same as the first warpage or the second warpage, or may be different from the first warpage or the second warpage.
Step S220, when the first warp degree and the second warp degree belong to different preset ranges, respectively growing on the first substrate 111 to form a first matching layer 120a and growing on the second substrate 112 to form a second matching layer 120b by different equipment and/or different processes.
In the present embodiment, the division of the preset range of the warp degree may be performed before the step S220 is performed. And then judging whether the first warping degree and the second warping degree belong to the same preset range. Moreover, when the first warp degree and the second warp degree belong to different preset ranges, in order to avoid that a corresponding screening process is required to be added for performing epitaxial generation on the first substrate 111 and the second substrate 112 in the same equipment and the same process (especially in batch production, the screening process is complicated), the first matching layer 120a may be formed by growing on the first substrate 111 and the second matching layer 120b may be formed by growing on the second substrate 112 through different equipment and/or different processes.
The warpage of the first substrate 111 can be adjusted by the stress formed between the first matching layer 120a and the first substrate 111, and the warpage of the second substrate 112 can be adjusted by the stress formed between the second matching layer 120b and the second substrate 112.
It should be noted that the division of the preset range may refer to the explanation of the first embodiment, and is not described herein again. The stress provided by the first matching layer 120a and the stress provided by the second matching layer 120b may be the same or different. In this embodiment, the stresses provided by the first matching layer 120a and the second matching layer 120b are different, so that the warpage of the first substrate 111 and the warpage of the second substrate 112 can be adjusted to different degrees.
For example, in one possible example, to ensure the yield of epitaxial structure fabrication, in conjunction with fig. 9 and fig. 10, step S220 may include step S221 and step S222, which are described in detail below.
Step S221, matching the first epitaxial growth parameter with the first warping degree, and matching the second epitaxial growth parameter with the second warping degree.
In the present embodiment, the first epitaxial growth parameter is different from the second epitaxial growth parameter (e.g., the thickness of the first matching layer 120a is greater than the thickness of the second matching layer 120b in fig. 10). That is, different preset ranges match different epitaxial growth parameters.
In step S222, a first matching layer 120a is grown on the first substrate 111 based on the first epitaxial growth parameters, and a second matching layer 120b is grown on the second substrate 112 based on the second epitaxial growth parameters, respectively, by different equipment and/or different processes.
In this embodiment, since the first epitaxial growth parameter is different from the second epitaxial growth parameter, the stress provided by the first matching layer 120a to the first substrate 111 is also different from the stress provided by the second matching layer 120b to the second substrate 112. Therefore, after the epitaxial growth, the first substrate 111 has a third warpage (e.g., h3 in fig. 10), the second substrate 112 has a fourth warpage (e.g., h4 in fig. 10), and a warpage difference between the third warpage and the fourth warpage is smaller than a warpage difference between the first warpage and the second warpage.
That is, in this embodiment, if the first warpage is greater than the second warpage, the adjusting force applied to the first substrate 111 may be greater than the adjusting force applied to the second substrate 112.
For example, in a specific application example, the first warp may be 16 μm, the second warp may be 5 μm, the third warp may be 11 μm, and the fourth warp may be 3 μm. Correspondingly, the warpage difference value of the first warpage and the second warpage is 11 μm, and the warpage difference value of the third warpage and the fourth warpage is 8 μm.
The materials of the first substrate 111 and the second substrate 112, and the composition of the first matching layer 120a and the second matching layer 120b may refer to the related explanation of the first embodiment, and are not repeated herein.
For example, the first matching layer 120a and the second matching layer 120 may include a nucleation layer 121 and/or a buffer layer 123, respectively. Each of the first and second epitaxial growth parameters may include a thickness of the nucleation layer 121 and/or the buffer layer 123. The thickness of the nucleation layer 121 may be 10 to 200nm, and the thickness of the buffer layer 123 may be 0.5 to 2 μm.
It should be noted that, when determining the thicknesses of the first matching layer and the second matching layer, the types of stresses required to be provided by the first matching layer and the second matching layer also need to be combined. For example, if the first warpage is greater than the second warpage and the first matching layer and the second matching layer are required to provide compressive stress, the thickness of the first matching layer is less than the thickness of the second matching layer; if the first warping degree is larger than the second warping degree and the first matching layer and the second matching layer are required to provide tensile stress, the thickness of the first matching layer is larger than that of the second matching layer.
Specifically, when the material of the first substrate 111 or the second substrate 112 is Si and the warpage is-20 to-10 μm, the material of the nucleation layer 121 included in the first matching layer 120a or the second matching layer 120b is AlN and the thickness of the nucleation layer is 13 to 18nm, so that the nucleation layer 121 provides tensile stress, and the material of the buffer layer 123 included therein is AlGaN and the thickness of the buffer layer is 1.6 to 1.8 μm, so that the buffer layer 123 provides compressive stress.
When the material of the first substrate 111 or the second substrate 112 is Si and the warpage is-10 to 0 μm, the material of the nucleation layer 121 included in the first matching layer 120a or the second matching layer 120b is AlN and the thickness of the nucleation layer is 18 to 23nm, so that the nucleation layer 121 provides tensile stress, and the material of the buffer layer 123 included therein is AlGaN and the thickness of the buffer layer is 1.4 to 1.6 μm, so that the buffer layer 123 provides compressive stress.
When the material of the first substrate 111 or the second substrate 112 is Si and the warpage is 0 to 10 μm, the material of the nucleation layer 121 included in the first matching layer 120a or the second matching layer 120b is AlN and the thickness of the nucleation layer is 23 to 28nm, so that the nucleation layer 121 provides tensile stress, and the material of the buffer layer 123 included in the first matching layer is AlGaN and the thickness of the buffer layer is 1.2 to 1.4 μm, so that the buffer layer 123 provides compressive stress.
When the material of the first substrate 111 or the second substrate 112 is Si and the warpage is 10 to 20 μm, the material of the nucleation layer 121 included in the first matching layer 120a or the second matching layer 120b is AlN and the thickness of the nucleation layer is 28 to 33nm, so that the nucleation layer 121 provides tensile stress, and the material of the buffer layer 123 included therein is AlGaN and the thickness of the buffer layer is 1 to 1.2 μm, so that the buffer layer 123 provides compressive stress.
When the material of the first substrate 111 or the second substrate 112 is SiC and the warpage is-20 to-10 μm, the nucleation layer 121 included in the first matching layer 120a or the second matching layer 120b is AlN and has a thickness of 65 to 75nm, so that the nucleation layer 121 provides compressive stress, and the buffer layer 123 included therein is GaN and has a thickness of 1.4 to 1.6 μm, so that the buffer layer 123 provides compressive stress.
When the material of the first substrate 111 or the second substrate 112 is SiC and the warpage is-10 to 0 μm, the material of the nucleation layer 121 included in the first matching layer 120a or the second matching layer 120b is AlN and the thickness of the nucleation layer is 55 to 65nm, so that the nucleation layer 121 provides compressive stress, and the material of the buffer layer 123 included therein is GaN and the thickness of the buffer layer is 1.2 to 1.4 μm, so that the buffer layer 123 provides compressive stress.
When the material of the first substrate 111 or the second substrate 112 is SiC and the warpage is 0 to 10 μm, the material of the nucleation layer 121 included in the first matching layer 120a or the second matching layer 120b is AlN and the thickness of the nucleation layer is 45 to 55nm, so that the nucleation layer 121 provides compressive stress, and the material of the buffer layer 123 included therein is GaN and the thickness of the buffer layer is 1 to 1.2 μm, so that the buffer layer 123 provides compressive stress.
When the material of the first substrate 111 or the second substrate 112 is SiC and the warpage is 10 to 20 μm, the material of the nucleation layer 121 included in the first matching layer 120a or the second matching layer 120b is AlN and the thickness of the nucleation layer is 35 to 45nm, so that the nucleation layer 121 provides compressive stress, and the material of the buffer layer 123 included therein is GaN and the thickness of the buffer layer is 0.8 to 1 μm, so that the buffer layer 123 provides compressive stress.
When the material of the first substrate 111 or the second substrate 112 is sapphire and the warpage is-20 to-10 μm, the nucleation layer 121 included in the first matching layer 120a or the second matching layer 120b is GaN and has a thickness of 13 to 18nm, so that the nucleation layer 121 provides tensile stress, and the buffer layer 123 is GaN and has a thickness of 0.8 to 1 μm, so that the buffer layer 123 provides tensile stress.
When the first substrate 111 or the second substrate 112 is made of sapphire and the warpage is-10 to 0 μm, the nucleation layer 121 included in the first matching layer 120a or the second matching layer 120b is made of GaN and has a thickness of 18 to 23nm, so that the nucleation layer 121 provides tensile stress, and the buffer layer 123 is made of GaN and has a thickness of 1 to 1.2 μm, so that the buffer layer 123 provides tensile stress.
When the first substrate 111 or the second substrate 112 is made of sapphire and the warpage is 0 to 10 μm, the nucleation layer 121 included in the first matching layer 120a or the second matching layer 120b is made of GaN and has a thickness of 23 to 28nm, so that the nucleation layer 121 provides tensile stress, and the buffer layer 123 is made of GaN and has a thickness of 1.2 to 1.4 μm, so that the buffer layer 123 provides tensile stress.
When the material of the first substrate 111 or the second substrate 112 is sapphire and the warpage is 10 to 20 μm, the nucleation layer 121 included in the first matching layer 120a or the second matching layer 120b is GaN and has a thickness of 28 to 33nm, so that the nucleation layer 121 provides tensile stress, and the buffer layer 123 included in the first matching layer is GaN and has a thickness of 1.4 to 1.6 μm, so that the buffer layer 123 provides tensile stress.
Further, after the first matching layer 120a or the second matching layer 120b is manufactured, since the warpage of the first substrate 111 or the second substrate 112 is effectively adjusted, a surface of the first matching layer 120a or the second matching layer 120b away from the first substrate 111 or the second substrate 112 is also relatively flat, and therefore, other epitaxial layers can be grown on the basis of the surface of the first matching layer 120a or the second matching layer 120b away from the first substrate 111 or the second substrate 112.
Specifically, the epitaxial structure method may further include the steps of:
epitaxially growing a first channel layer with the thickness of 0.1-0.5 μm on one surface of the first matching layer 120a far away from the first substrate 111, and epitaxially growing a second channel layer with the thickness of 0.1-0.5 μm on one surface of the second matching layer 120b far away from the second substrate 112;
Epitaxially growing a first barrier layer with a thickness of 10-50 nm on one surface of the first channel layer away from the first matching layer 120a, and epitaxially growing a second barrier layer with a thickness of 10-50 nm on one surface of the second channel layer away from the second matching layer 120 b;
and epitaxially growing a first cap layer with the thickness of 1-10 nm on one surface of the first barrier layer, which is far away from the first channel layer, and epitaxially growing a second cap layer with the thickness of 1-10 nm on one surface of the second barrier layer, which is far away from the second channel layer.
The relevant contents of the first channel layer, the first barrier layer, and the first cap layer, and the second channel layer, the second barrier layer, and the second cap layer may refer to the explanation of the channel layer 130, the barrier layer 140, and the cap layer 150 in the first embodiment, and are not repeated here.
The present embodiments also provide an epitaxial structure that may include a substrate 110, a matching layer 120, a channel layer 130, a barrier layer 140, and a cap layer 150.
The matching layer 120 may include a nucleation layer 121 and/or a buffer layer 123, among others. Specifically, in a specific application example, the matching layer 120 may include a nucleation layer 121 and a buffer layer 123. The nucleation layer 121 may be grown on a side of the substrate 110, the buffer layer 123 may be grown on a side of the nucleation layer 121 remote from the substrate 110, the channel layer 130 may be grown on a side of the buffer layer 123 remote from the nucleation layer 121, the barrier layer 140 may be formed on a side of the channel layer 130 remote from the buffer layer 123, and the cap layer 150 may be formed on a side of the barrier layer 140 remote from the channel layer 130.
It should be noted that the epitaxial structure may be manufactured and formed by the above-mentioned epitaxial structure manufacturing method, and therefore, the relevant content of the epitaxial structure may refer to the foregoing description of the epitaxial structure manufacturing method, and is not repeated herein.
To sum up, the epitaxial structure manufacturing method and the epitaxial structure that this application provided, through with the warpage belong to the growth that carries out the epitaxial layer in same equipment and same technology with two at least substrates 110 of same preset scope, can make the difference between two at least epitaxial structures that obtain less, the homogeneity is higher, thereby improve and have the relatively poor problem of homogeneity because of there is great difference in the warpage that corresponds substrate 110 in the prior art through same equipment, each epitaxial structure that same technology carries out epitaxial growth and obtains, the yield of epitaxial structure manufacturing has been guaranteed effectively, and, can also avoid because of need the later stage to screen each epitaxial structure that obtains and lead to the problem that manufacturing cost increases, have high use value.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims (10)

1. A method of fabricating an epitaxial structure, comprising:
providing a plurality of substrates, and classifying the plurality of substrates based on warpage to obtain at least one substrate group, wherein the warpage of each substrate in the same substrate group belongs to the same preset range, and the warpage of each substrate in different substrate groups belongs to different preset ranges;
obtaining at least two substrates in a group of substrates;
forming a matching layer on one surface of each of the at least two substrates through epitaxial growth by the same equipment and the same process, so as to adjust the warping degree of the substrate through the stress formed between the matching layer and the substrate;
the materials of the substrates in the same substrate group are the same, and the method further comprises the following steps:
determining an epitaxial growth parameter in advance based on the material corresponding to each substrate group and the preset range corresponding to the substrate group, wherein the epitaxial growth parameters determined based on different materials and different preset ranges are different;
the step of forming a corresponding matching layer on one surface of each of the at least two substrates by epitaxial growth through the same equipment and the same process comprises the following steps:
obtaining predetermined epitaxial growth parameters of the at least two substrates;
And growing a matching layer on one surface of each of the at least two substrates according to the obtained epitaxial growth parameters by the same equipment and the same process.
2. The method of claim 1, wherein the step of predetermining an epitaxial growth parameter based on the material corresponding to each substrate group and the predetermined range corresponding to the substrate group comprises:
the thickness of the matching layer is predetermined based on the material corresponding to each substrate group and the preset range corresponding to the substrate group, wherein the matching layer comprises a nucleation layer and/or a buffer layer, the thickness of the nucleation layer is 10-200 nm, and the thickness of the buffer layer is 0.5-2 μm.
3. The epitaxial structure fabrication method of claim 2, wherein the step of predetermining the thickness of the matching layer based on the material corresponding to each substrate group and the predetermined range corresponding to the substrate group comprises:
determining the type of stress required to be provided by the matching layer based on the material of the substrate group and the material of the matching layer, wherein the stress comprises compressive stress and tensile stress;
if the matching layer is required to provide compressive stress, determining the thickness of the matching layer according to a first preset relation and a preset range corresponding to the substrate group, wherein when the thickness of the matching layer is determined based on the first preset relation, the thickness of the matching layer corresponding to a preset range with a larger warping degree is smaller than the thickness of the matching layer corresponding to a preset range with a smaller warping degree in any two preset ranges;
And if the matching layer is required to provide tensile stress, determining the thickness of the matching layer according to a second preset relation and a preset range corresponding to the substrate group, wherein when the thickness of the matching layer is determined based on the second preset relation, the thickness of the matching layer corresponding to a preset range with a larger warping degree is larger than the thickness of the matching layer corresponding to a preset range with a smaller warping degree in any two preset ranges.
4. A method of fabricating an epitaxial structure according to any of claims 1 to 3, characterized in that the method further comprises:
epitaxially growing a channel layer with the thickness of 0.1-0.5 mu m on one surface of each matching layer far away from the substrate;
epitaxially growing a barrier layer with the thickness of 10-50 nm on one surface of each channel layer far away from the matching layer;
and epitaxially growing a cap layer with the thickness of 1-10 nm on one surface of each barrier layer far away from the channel layer.
5. A method of fabricating an epitaxial structure, comprising:
providing at least two substrates including a first substrate and a second substrate, wherein the first substrate has a first warp degree and the second substrate has a second warp degree different from the first warp degree;
When the first warping degree and the second warping degree belong to different preset ranges, a first matching layer is formed by growing on the first substrate and a second matching layer is formed by growing on the second substrate through different equipment and/or different processes, so that the warping degree of the first substrate is adjusted through stress formed between the first matching layer and the first substrate, and the warping degree of the second substrate is adjusted through stress formed between the second matching layer and the second substrate.
6. The method for manufacturing an epitaxial structure according to claim 5, wherein the step of growing a first matching layer on the first substrate and a second matching layer on the second substrate by different equipment and/or different processes when the first warp and the second warp belong to different preset ranges comprises:
when the first warping degree and the second warping degree belong to different preset ranges, matching a first epitaxial growth parameter with the first warping degree, and matching a second epitaxial growth parameter with the second warping degree, wherein the first epitaxial growth parameter is different from the second epitaxial growth parameter;
And respectively growing on the first substrate to form a first matching layer based on the first epitaxial growth parameters and growing on the second substrate to form a second matching layer based on the second epitaxial growth parameters through different equipment and/or different processes, wherein after epitaxial growth, the first substrate has a third warping degree, the second substrate has a fourth warping degree, and the warping difference value of the third warping degree and the fourth warping degree is smaller than that of the first warping degree and the second warping degree.
7. The method for manufacturing an epitaxial structure according to claim 6, characterized in that each of the first and second epitaxial growth parameters comprises a thickness of a matching layer, each of the first and second matching layers comprises a nucleation layer and/or a buffer layer, the thickness of the nucleation layer is 10 to 200nm, and the thickness of the buffer layer is 0.5 to 2 μm.
8. The method of claim 7, wherein if the first warp is greater than the second warp and compressive stress is required to be provided by the first matching layer and the second matching layer, the thickness of the first matching layer is less than the thickness of the second matching layer;
If the first warping degree is larger than the second warping degree and the first matching layer and the second matching layer are required to provide tensile stress, the thickness of the first matching layer is larger than that of the second matching layer.
9. Method for fabricating an epitaxial structure according to one of claims 5 to 8, characterized in that it further comprises:
epitaxially growing a first channel layer with the thickness of 0.1-0.5 mu m on one surface of the first matching layer far away from the first substrate, and epitaxially growing a second channel layer with the thickness of 0.1-0.5 mu m on one surface of the second matching layer far away from the second substrate;
epitaxially growing a first barrier layer with the thickness of 10-50 nm on one surface of the first channel layer, which is far away from the first matching layer, and epitaxially growing a second barrier layer with the thickness of 10-50 nm on one surface of the second channel layer, which is far away from the second matching layer;
and epitaxially growing a first cap layer with the thickness of 1-10 nm on one surface of the first barrier layer, which is far away from the first channel layer, and epitaxially growing a second cap layer with the thickness of 1-10 nm on one surface of the second barrier layer, which is far away from the second channel layer.
10. An epitaxial structure, characterized in that it is manufactured by a method of manufacturing an epitaxial structure according to any one of claims 1 to 9.
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