CN111541431A - Radio frequency front end circuit, radio frequency front end device and system of millimeter waves and terahertz waves - Google Patents
Radio frequency front end circuit, radio frequency front end device and system of millimeter waves and terahertz waves Download PDFInfo
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- CN111541431A CN111541431A CN202010120924.0A CN202010120924A CN111541431A CN 111541431 A CN111541431 A CN 111541431A CN 202010120924 A CN202010120924 A CN 202010120924A CN 111541431 A CN111541431 A CN 111541431A
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- 230000000694 effects Effects 0.000 description 5
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- 239000004065 semiconductor Substances 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
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- 230000010354 integration Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/401—Circuits for selecting or indicating operating mode
Abstract
The invention provides a radio frequency front end circuit of millimeter waves and terahertz waves, a radio frequency front end device and a radio frequency front end system, the RF front-end circuit includes a transmitting unit having a plurality of power amplifiers, a receiving unit having a plurality of low noise amplifiers, and a transmit/receive switch, the power amplifiers are provided with a first matching circuit, a second matching circuit, a first load circuit and three ends of a first transistor which are electrically connected with the first matching circuit, the second matching circuit and the first load matching circuit correspondingly, the low noise amplifiers are provided with a third matching circuit, a fourth matching circuit, a second load circuit and three ends of a second transistor which are electrically connected with the third matching circuit, the fourth matching circuit and the second load circuit correspondingly, the receiving and transmitting switch is electrically connected between an antenna and the transmitting unit and the receiving unit and used for selectively conducting the electrical connection between the transmitting unit or the receiving unit and the antenna.
Description
Technical Field
The present invention relates to a millimeter wave and terahertz wave rf front-end circuit, an rf front-end device, and an rf front-end system, and more particularly, to a millimeter wave and terahertz wave rf front-end circuit, an rf front-end device, and an rf front-end system capable of achieving a significant reduction in power difference when operating in different frequency bands.
Background
With the development of modern wireless communication technologies (such as radar devices and communication devices), the miniaturization requirements of radio frequency microwave devices and functional modules are increasingly urgent, and the whole integration of the terahertz transmitting front-end circuit can be realized by applying a hybrid integration mode based on the technologies of micro-nano electronics modules, micro-assembly, micro-electro-mechanical systems and the like.
The traditional radio frequency transceiving front-end circuit for high-frequency millimeter waves and terahertz waves has the problems of complex structure and high design difficulty, different frequency band circuits can be independently and separately arranged in the radio frequency transceiving front-end circuit due to two different frequency bands of a high-frequency millimeter wave frequency band and a terahertz wave frequency band, for example, the millimeter wave transceiving circuits and the terahertz wave transceiving circuits in the two different frequency bands are independently and separately arranged in the radio frequency transceiving front-end circuit, and the millimeter wave transceiving circuits and the terahertz wave transceiving circuits in the two different frequency bands are not electrically connected with each other and are not designed with matching circuits, so that when the radio frequency transceiving front-end circuit receives or sends a millimeter wave radio frequency signal through a path of the millimeter wave transceiving circuits and an antenna connected with the millimeter wave radio frequency signal, when the radio frequency transceiving front-end circuit receives or sends a terahertz wave radio frequency signal through a path of the other independent terahertz wave transceiving circuits and the antenna connected with the millimeter wave radio frequency Or sending out, so that when the existing rf transceiving front-end circuit operates in different frequency bands, the problem of great power difference between the two different frequency bands may be caused, for example, the power difference between the bandwidth power of the center frequency of the transmitting (or receiving) millimeter wave frequency band (e.g., 3.5 GHz-60 GHz) of the millimeter wave transceiving circuit in the existing rf transceiving front-end circuit and the bandwidth power of the center frequency of the transmitting (or receiving) terahertz wave frequency band (e.g., 100 GHz-200 GHz) of the terahertz wave transceiving circuit may be 0.5 dB-8 dB.
Disclosure of Invention
An object of the present invention is to provide a front-end rf circuit for millimeter waves and terahertz waves, which can achieve a significantly reduced power difference when operating in different frequency bands.
Another objective of the present invention is to provide an rf front-end circuit that can simplify circuit design and reduce cost.
Another objective of the present invention is to provide a radio frequency front end device capable of achieving a large reduction of power difference when operating in different frequency bands.
Another objective of the present invention is to provide an rf front-end device that can simplify circuit design and reduce cost.
Another object of the present invention is to provide a radio frequency front-end system capable of achieving a significant reduction in power variation when operating in different frequency bands.
Another object of the present invention is to provide a rf front-end system that can simplify circuit design and reduce cost.
The present invention provides a millimeter wave and terahertz wave rf front-end circuit, including a transmitting unit, a receiving unit and a switch, wherein the transmitting unit is used for transmitting an rf output signal, the transmitting unit has a plurality of power amplifiers connected in series, the plurality of power amplifiers has a first matching circuit, a second matching circuit, a first load circuit and a first transistor, the first transistor has a first end, a second end and a third end, the first end is electrically connected to the first and second matching circuits, the second and third ends are respectively electrically connected to a ground end and the first load circuit, the receiving unit is used for receiving an rf input signal, the receiving unit has a plurality of low noise amplifiers connected in series, the plurality of low noise amplifiers have a third matching circuit, a fourth matching circuit, and a switch for receiving and transmitting signals, The second transistor is provided with a first end, a second end and a third end, the first end of the second transistor is electrically connected with the third and fourth matching circuits, the second end and the third end of the second transistor are respectively electrically connected with the grounding end and the second load circuit, and the transceiving selector switch is electrically connected between an antenna and the transmitting unit and the receiving unit and used for selectively conducting the electrical connection between the transmitting unit and the antenna or conducting the electrical connection between the receiving unit and the antenna.
The invention also provides a radio frequency front end device, which comprises a transceiving processing unit and a plurality of radio frequency front end circuits, wherein the transceiving processing unit is provided with a plurality of transceiving processing groups and a power divider, the power divider is electrically connected with one end corresponding to the transceiving processing groups, each transceiving processing group is provided with a receiving processing part and a transmitting processing part, the receiving processing part is provided with a first variable gain amplifier and a first phase shifter electrically connected with the first variable gain amplifier, the transmitting processing part is provided with a second variable gain amplifier and a second phase shifter electrically connected with the second variable gain amplifier, the plurality of radio frequency front end circuits are electrically connected with the other ends of the transceiving processing groups, each radio frequency front end circuit comprises a transmitting unit, a receiving unit and a transceiving switch, the transmitting unit is electrically connected with the corresponding transmitting processing part, the transmitting unit is provided with a plurality of power amplifiers which are connected in series, the plurality of power amplifiers are provided with a first matching circuit, a second matching circuit, a first load circuit and a first transistor, the first transistor is provided with a first end, a second end and a third end, the first end is electrically connected with the first matching circuit and the second matching circuit, the second end and the third end are respectively and electrically connected with a grounding end and the first load circuit, the receiving unit is electrically connected with the corresponding receiving processing part and is used for receiving a radio frequency input signal, the receiving unit is provided with a plurality of low noise amplifiers which are connected in series, the plurality of low noise amplifiers are provided with a third matching circuit, a fourth matching circuit, a second load circuit and a second transistor, the second transistor is provided with a first end, a second end and a third end, the first end of the second transistor is electrically connected with the third and fourth matching circuits, the second and third ends of the second transistor are electrically connected with the grounding terminal and the second load circuit respectively, and the transceiving switcher is electrically connected between an antenna and the transmitting unit and the receiving unit and used for selectively conducting the electrical connection between the transmitting unit and the antenna or conducting the electrical connection between the receiving unit and the antenna.
The invention also provides a radio frequency front end system, which comprises a power divider and a plurality of radio frequency front end devices, wherein the radio frequency front end devices are electrically connected with the power divider.
Therefore, the embodiments of the present invention can achieve the effects of greatly reducing the power difference, simplifying the circuit design and reducing the cost when operating in different frequency bands.
Drawings
Fig. 1A is a schematic diagram illustrating a switching mode of a transceiving switch of an rf front-end circuit according to a first embodiment of the present invention.
Fig. 1B is a schematic diagram illustrating another switching mode of the transceiving switch of the rf front-end circuit according to the first embodiment of the present invention.
Fig. 2A is a circuit diagram of a plurality of power amplifiers according to a first embodiment of the invention.
Fig. 2B is a circuit diagram of a plurality of low noise amplifiers according to the first embodiment of the invention.
Fig. 3 is a block diagram of an rf front-end device according to a second embodiment of the present invention.
Fig. 3A is another block diagram of an rf front-end device according to a second embodiment of the present invention.
Fig. 3B is another block diagram of an rf front-end device according to a second embodiment of the present invention.
Fig. 4 is a block diagram of a radio frequency front-end system according to a third embodiment of the present invention.
Description of reference numerals: 1-a radio frequency front end circuit; 11-a transmitting unit; 111-a power amplifier; 1111. 1211-first and second input terminals; 1112. 1212-first and second output terminals; 112. 113, 122, 123-first, second, third, fourth matching circuits; c1, C2, C3, C4-first, second, third, fourth capacitor elements; l1, L2, L3, L4-first, second, third, fourth inductors; 114. 124-first and second load circuits; r1, R2-first and second resistive elements; l1 ', L2' -a first and a second load inductors; 115. 125-first, two transistors; 1151. 1152, 1153, 1251, 1252, 1253-first, second, third end; 12-a receiving unit; 121-low noise amplifier; 13-a transmit-receive switch; 131. 132-first and second switching terminals; 133-a connecting end; 2-a radio frequency front end device; 21-a transmit-receive processing unit; 211-a transmit-receive processing group; 212-receive processing section; 2121. 2131-first and second variable gain amplifiers; 2122. 2132 first and second phase shifters; 213-a transmission processing section; 212. 31-a power divider; 3-a radio frequency front end system; 4-an antenna; 5-a signal processing unit; gnd-ground; vc-reference power supply.
Detailed Description
The above objects, together with the structural and functional features thereof, are accomplished by the preferred embodiments according to the accompanying drawings.
The invention provides a radio frequency front-end circuit, a radio frequency front-end device and a radio frequency front-end system of millimeter waves and terahertz waves. Fig. 1A is a schematic diagram illustrating a switching mode of a transceiving switch of a radio frequency front end circuit according to a first embodiment of the present invention; fig. 1B is a schematic diagram illustrating another switching mode of a transceiving switch of an rf front-end circuit according to a first embodiment of the present invention; fig. 2A is a circuit diagram of a plurality of power amplifiers according to a first embodiment of the invention; fig. 2B is a circuit diagram of a plurality of low noise amplifiers according to the first embodiment of the invention. The rf front-end circuit 1 is applied to a millimeter wave and terahertz wave system (not shown), such as a tire pressure detection system, a radar detection system for vehicles, an anti-collision radar system for automobiles, a wireless communication system (such as a 5G or 6G system), a medical scanning system, or the like. The rf front-end circuit 1 includes a transmitting unit 11, a receiving unit 12, and a transceiving switch 13, where the transmitting unit 11 is configured to transmit an amplified rf output signal, the transmitting unit 11 has a plurality of Power amplifiers 111, and the plurality of Power amplifiers 111 in this embodiment represent four Power amplifiers 111 (PA) for amplifying the received rf output signal, and the first, second, third, and four Power amplifiers 111 are connected in series in four stages of the Power amplifiers 111 in sequence from left to right in fig. 1A, but not limited thereto, and in a specific implementation, the Power amplifiers 111 may be two or more than four Power amplifiers 111.
The power amplifiers 111 have a first matching circuit 112, a second matching circuit 113, a first load circuit 114, a first input 1111, a first output 1112 and a first transistor 115, wherein four power amplifiers 111 are connected in series, and the first output end 1112 of the previous power amplifier 111 and the first input end 1111 of the next power amplifier 111 in each two adjacent power amplifiers 111 are electrically connected, for example the first input 1111 of the first pa 11 is configured to receive an rf output signal transmitted from a transceiver processing unit (not shown), the first output 1112 of the first pa 111 is electrically connected to the first input 1111 of the second pa 111, the first output 1112 of the second pa 111 is electrically connected to the first input 1111 of the third pa 111, and so on. The first transistor 115 is shown as a Field Effect Transistor (FET), such as an NMOS transistor, but not limited thereto, and in the specific implementation, any semiconductor device (such as a PMOS transistor) with an amplifying function is the first transistor 115.
The first transistor 115 has a first terminal 1151, a second terminal 1152 and a third terminal 1153, the first terminal 1151, the second terminal 1152 and the third terminal 1153 of the first transistor 115 are sequentially a gate terminal, a source terminal and a drain terminal in this embodiment, the first terminal 1151 (i.e., the gate terminal) is electrically connected to the first and second matching circuits 112 and 113, and the second and third terminals 1152 and 1153 (i.e., the source terminal and the drain terminal) are respectively electrically connected to a ground terminal Gnd and the first load circuit 114. The first and second matching circuits 112, 113 only allow signals of a specific frequency band to pass through, but block signals outside the frequency band, the first matching circuit 112 includes a first capacitor C1 and a first inductor L1, one end of the first capacitor C1 is electrically connected to the first input 1111, the other end of the first capacitor C1 is electrically connected to one end of the first inductor L1 (i.e. the first capacitor C1 is connected in series with the first inductor L1), the other end of the first inductor L1 is electrically connected to the first end 1151 (i.e. gate end) of the first transistor 115, and the third end 1153 (i.e. drain end) of the first transistor 115 is electrically connected to the first output end 1112.
The second matching circuit 113 includes a second capacitor C2 and a second inductor L2, wherein one end of the second capacitor C2, one end of the second inductor L2, the other end of the first inductor L1 and the first end 1151 (i.e., gate terminal) of the first transistor 115 are electrically connected together, and the other end of the second capacitor C2 is electrically connected to the other end of the second inductor L2 and the ground Gnd (i.e., the second capacitor C2 and the second inductor L2 are connected in parallel). In the embodiment, the number of the first and second capacitor elements C1, C2 and the first and second inductor elements is not limited to the above 1, and in the specific implementation, the user can adjust the number of the first and second capacitor elements C1, C2 and the first and second inductor elements L1, L2 according to the transmission power of the transmitting unit 11 and the requirement of the required multi-band and frequency range, for example, a plurality of first capacitor elements C1 (e.g. more than 2 first capacitor elements C1) are connected in series with a plurality of first inductor elements L1 (e.g. more than 2 first inductor elements L1), and a plurality of second capacitor elements C2 (e.g. more than 2 second capacitor elements C2) are connected in parallel with a plurality of second inductor elements L2 (e.g. more than 2 second inductor elements L2). The first load circuit 114 can be a matching circuit or a dc noise isolation circuit, and the first load circuit 114 includes a first resistor R1 and a first load inductor L1 ', two ends of the first resistor R1 are electrically connected to a reference power Vc (e.g., 5 volts (V) or 12 volts (V)) and one end of the first load inductor L1 ', respectively, and the other end of the first load inductor L1 ' is electrically connected to the third end of the first transistor 115. Therefore, by adjusting the impedance matching values (e.g., the capacitance values of the first and second capacitor elements C1, C2 and the inductance values of the first and second inductor elements L1, L2) in the first and second matching circuits 112, 113 of the transmitting unit 11 and matching the impedance matching values (e.g., the resistance value of the first resistor element R1 and the inductance value of the first load inductor element L1') in the first load circuit 114, different frequency bands (e.g., the millimeter wave frequency band is 3.5 GHz-60 GHz or the terahertz frequency band is 100 GHz-200 GHz) can be output in the same circuit, so as to effectively output (or transmit) the millimeter wave rf output signal or the terahertz wave rf output signal.
The receiving unit 12 is configured to receive an rf input signal, the receiving unit 12 has a plurality of low noise amplifiers 121, in this embodiment, the plurality of low noise amplifiers 121 represent four low noise amplifiers 121 (LNAs) for amplifying and reducing (or suppressing) noise of the rf input signal received from an antenna 4, and the first, second, third, and four low noise amplifiers 121 are connected in series in four stages of the low noise amplifiers 121 from left to right in fig. 1B, but not limited thereto, and in an embodiment, the low noise amplifiers 121 may be more than two or more than four power amplifiers 111. The plurality of low noise amplifiers 121 are provided with a third matching circuit 122, a fourth matching circuit 123, a second load circuit 124, a second input 1211, a second output 1212, and a second transistor 125, wherein the plurality of low noise amplifiers 121 are connected in series, and the second input 1211 of the previous low noise amplifier 121 and the second output 1212 of the next low noise amplifier 121 in each two adjacent low noise amplifiers 121 are electrically connected, for example, the second output 1212 of the first low noise amplifier 121 transmits the amplified rf input signal to the transceiving processing unit (not shown), the second input 1211 of the first low noise amplifier 121 is electrically connected to the second output 1212 of the second low noise amplifier 121, the second input 1211 of the second low noise amplifier 121 is electrically connected to the second output 1212 of the third low noise amplifier 121, and so on. The second Transistor 125 is shown as a Field Effect Transistor (FET), such as an NMOS Transistor, but not limited thereto, and in the specific implementation, any semiconductor device (such as a PMOS Transistor) with an amplifying function is the second Transistor 125. In one embodiment, the first and second transistors 115 and 125 are Complementary Metal Oxide Semiconductor (CMOS), silicon germanium (SiGe), gallium arsenide (GaAs), gallium nitride (GaN), or Bipolar Junction Transistor (BJT).
The second transistor 125 has a first terminal 1251, a second terminal 1252 and a third terminal 1253, the first, second and third terminals 1251, 1252 and 1253 of the second transistor 125 are sequentially a gate terminal, a source terminal and a drain terminal in this embodiment, the first terminal 1251 (i.e., gate terminal) of the second transistor 125 is electrically connected to the third and fourth matching circuits 122 and 123, and the second and third terminals 1252 and 1253 (i.e., source terminal and drain terminal) of the second transistor 125 are electrically connected to the ground terminal Gnd and the second load circuit 124, respectively. The third and fourth matching circuits 122, 123 only allow signals of a specific frequency band to pass through, but block signals outside the frequency band, the third matching circuit 122 includes a third capacitor C3 and a third inductor L3, one end of the third capacitor C3 is electrically connected to the second input 1211, the other end of the third capacitor C3 is electrically connected to one end of the third inductor L3 (i.e., the third capacitor C3 is connected in series with the third inductor L3), the other end of the third inductor L3 is electrically connected to the first end 1251 (i.e., the gate end) of the second transistor 125, and the third end 1253 (i.e., the drain end) of the second transistor 125 is electrically connected to the second output end 1212.
The fourth matching circuit 123 includes a fourth capacitor C4 and a fourth inductor L4, one end of the fourth capacitor C4 is electrically connected to one end of the fourth inductor L4, the other end of the third inductor L3 and the first end 1251 of the second transistor 125, and the other end of the fourth capacitor C4 is electrically connected to the other end of the fourth inductor L4 and the ground Gnd (i.e., the fourth capacitor C4 and the fourth inductor L4 are connected in parallel). In the embodiment, the number of the third and fourth capacitance elements C3, C4 and the third and fourth inductance elements L3, L4 is not limited to the above 1, and in the specific implementation, the user can adjust the number of the third and fourth capacitance elements C3, C4 and the third and fourth inductance elements L3, L4 according to the received power of the receiving unit 12 and the requirement of the required multi-band and frequency range, for example, a plurality of third capacitance elements C3 (e.g. more than 2 third capacitance elements C3) and a plurality of third inductance elements L3 (e.g. more than 2 third inductance elements L3) are connected in series, and a plurality of fourth capacitance elements C4 (e.g. more than 2 fourth capacitance elements C4) and a plurality of fourth inductance elements L4 (e.g. more than 2 fourth inductance elements L4) are connected in parallel. The second load circuit 124 can be a matching circuit or a dc noise isolation circuit, and the second load circuit 124 includes a second resistor R2 and a second load inductor L2 ', two ends of the second resistor R2 are electrically connected to the reference power Vc (e.g., 5 volts (V) or 12 volts (V)) and one end of the second load inductor L2 ', respectively, and the other end of the second load inductor L2 ' is electrically connected to the third end 1253 of the second transistor 125. Therefore, by adjusting the impedance matching values (e.g., the capacitance values of the third and fourth capacitance elements C3, C4 and the inductance values of the third and fourth inductance elements L3, L4) in the third and fourth matching circuits 122, 123 of the receiving unit 12 and matching the impedance matching values (e.g., the resistance value of the second resistance element R2 and the inductance value of the second load inductance element L2') in the second load circuit 124, different frequency bands (e.g., the millimeter wave frequency band is 3.5 GHz-60 GHz range or the terahertz frequency band is 100 GHz-200 GHz range) can be received in the same circuit, so as to effectively receive the millimeter wave rf input signal or the terahertz wave rf input signal.
In addition, the transceiving switch 13 is, for example, a single-pole double-throw rf switch in the embodiment, but is not limited thereto, the transceiving switch 13 is electrically connected between the antenna 4 and the transmitting unit 11 and the receiving unit 12 (i.e. the transceiving switch 13 is located between the receiving unit 12 and the antenna 4 and between the transmitting unit 11 and the antenna 4), the transceiving switch 13 is used to selectively conduct the electrical connection between the transmitting unit 11 and the antenna 4 or conduct the electrical connection between the receiving unit 12 and the antenna 4, the antenna 4 is a Multiple-Input Multiple-Output (MIMO) array antenna, and the antenna 4 in the embodiment is 4 MIMO array antennas. The transmit/receive switch 13 has a first switch end 131, a second switch end 132 and a connection end 133, the first switch end 131 is electrically connected to the first output end 1112 of the last pa 111 (e.g. the fourth pa 111) of the plurality of pas 111, the second switch end 132 is electrically connected to the second input end 1211 of the last lna 121 (e.g. the fourth lna 121) of the plurality of lnas 121, and the connection end 133 is electrically connected to the antenna 4. The transceiving switch 13 selectively switches on the electrical connection between any one of the first and second switch terminals 131, 132 and the connection terminal 133, and selectively switches on the electrical connection between the transmitting unit 11 and the antenna 4 or switches on the electrical connection between the receiving unit 12 and the antenna 4, for example, when the transmitting unit 11 is to transmit an amplified rf output signal (such as a millimeter wave rf output signal or a terahertz wave rf output signal), the transceiving switch 13 can be controlled by a control signal transmitted by a signal processing unit (such as a dsp or a baseband chip, not shown) to electrically connect the first switch terminal 131 and the connection terminal 133, so that the rf output signal passes through the transceiving switch 13 and is transmitted through the antenna 4; when the receiving unit 12 receives the rf input signal (such as a millimeter wave rf input signal or a terahertz wave rf input signal) through the antenna 4, the transceiving switch 13 can be controlled by another control signal transmitted by the signal processing unit to electrically connect the second switch 132 and the connection end 133, so that the antenna 4 transmits the received rf input signal to the receiving unit 12 through the transceiving switch 13.
Therefore, the design of the transmitting unit 11, the receiving unit 12 and the transceiving switch 13 of the present invention can be applied to the millimeter wave band to the terahertz wave band, and can achieve the effect of greatly reducing the power difference when operating in different bands, and also effectively simplify the circuit design and reduce the cost. Furthermore, by the rf front-end circuit 1 of the present invention having the first, second, third, and fourth matching circuits 112, 113, 122, and 123 disposed therein, the power difference between the bandwidth power of the center frequency of the rf signal (e.g., mm-wave rf output signal or mm-wave rf input signal) transmitting (or receiving) at 3.5GHz (hertz), 28GH, or 60GHz and the bandwidth power of the center frequency of the rf signal (e.g., thz-wave rf output signal or thz-wave rf input signal) transmitting (or receiving) at 100GHz, 120GHz, 150GHz, 180GHz, or 200GHz (terahertz-wave rf output signal or thz-wave rf input signal) is less than 0.1dB (decibel), therefore, compared with the existing rf transceiver front-end circuit without a matching circuit, the rf front-end circuit 1 with a matching circuit therein according to the present invention has the effect that the bandwidth power difference can be reduced to 0.1dB (or less than 0.1 dB) from 0.5dB to 8dB (dB).
Please refer to fig. 3, which is a block diagram illustrating an rf front-end device according to a second embodiment of the present invention; FIG. 3A is a schematic diagram of another RF front-end device according to a second embodiment of the present invention; fig. 3B is another block diagram of an rf front-end device according to a second embodiment of the invention, with reference to fig. 1A and 1B. As shown in the figure, the rf front end device 2 of the present embodiment is suitable for the millimeter wave and terahertz wave systems (not shown, such as an automobile anti-collision radar system, and a wireless communication system (such as a 5G or 6G system)), the rf front end device 2 includes a transceiving processing unit 21 and a plurality of rf front end circuits 1, the rf front end circuits 1 are represented as four rf front end circuits 1 in the present embodiment, and the structure, connection relationship, and efficacy of the rf front end circuit 1 of the present embodiment are the same as those of the rf front end circuit 1 of the first embodiment, and therefore, the description thereof is omitted here.
The transceiving processing unit 21 is electrically connected to the plurality of rf front-end circuits 1, and the transceiving processing unit 21 has a plurality of transceiving processing groups 211 and a power divider 212, one end and the other end of the transceiving processing groups 211 are electrically connected to the power divider 212 and the plurality of rf front-end circuits 1, respectively, the power divider 212 is shown as a pair of four power dividers in this embodiment, but is not limited thereto, and in the specific implementation, the power divider 212 may also be a plurality of pairs of power dividers, such as a pair of two or a pair of eight power dividers. The power divider 212 is configured to combine a plurality of rf signals (e.g., rf input signals) into a single rf signal, or to divide a single rf signal (e.g., rf output signal) into a plurality of rf signals, for example, referring to fig. 3B, the power divider 212 combines the rf input signals (e.g., millimeter wave or terahertz wave rf input signals) received by the four transceiving processing sets 211 and transmitted by the respective antennas 4 into a single rf input signal, and transmits the single rf input signal to a signal processing unit 5, or the power divider 212 divides the single rf output signal (e.g., millimeter wave or terahertz wave rf output signal) transmitted by the signal processing unit 5 into four rf output signals, for example, to the corresponding transceiving processing sets 211, for example. In addition, the power divider 212 of the present invention may also be referred to as a power divider/combiner (e.g., a Wilkinson power divider/combiner). The signal processing unit 5 is used for performing signal processing, storing or other processing functions on the received or output rf input signal or rf output signal.
The plurality of transceiving processing sets 211 are shown as four transceiving processing sets 211 in this embodiment, but is not limited thereto. Each of the transceiving processing groups 211 has a receiving processing portion 212 and a transmitting processing portion 213, the receiving processing portion 212 is electrically connected to the corresponding receiving unit 12, the transmitting processing portion 213 is electrically connected to the corresponding transmitting unit 11, for example, the receiving processing portion 212 of the first transceiving processing group 211 is electrically connected to the receiving unit 12 of the first rf front-end circuit 1, the transmitting processing portion 213 of the first transceiving processing group 211 is electrically connected to the transmitting unit 11 of the first rf front-end circuit 1, and the remaining second, third, and four transceiving processing groups 21 are electrically connected to the corresponding second, third, and four rf front-end circuits 1, and so on. The receive processing section 212 has a first variable gain amplifier 2121 and a first phase shifter 2122, the first phase shifter 2122 (e.g. the first phase shifter 2122 of the first transceiving processing group 211) is electrically connected to one end of the power divider 212 and one end of the first variable gain amplifier 2121 (e.g. the first variable gain amplifier 2121 of the first transceiving processing group 211) respectively, the other end of the first variable gain amplifier 2121 is electrically connected to the second output terminal 1212 of the first low noise amplifier 121 of the receiving unit 12 corresponding to one rf front-end circuit 1 (e.g. the first rf front-end circuit 1) of the plurality of rf front-end circuits 1, and the first variable gain amplifier 2121 is used for performing gain adjustment on the received signal (e.g. the rf input signal received by the antenna 4), the first phase shifter 2122 is used for adjusting the phase of the received signal (e.g., the rf input signal transmitted by the first variable gain amplifier 2121).
The transmission processing part 213 has a second variable gain amplifier 2131 and a second phase shifter 2132 electrically connected to the second variable gain amplifier 2131, the second variable gain amplifier 2131 (e.g., the second variable gain amplifier 2131 of the first transceiving processing group 211) is electrically connected to one end of the power divider 212 and one end of the second phase shifter 2132, respectively, the other end of the second phase shifter 2132 (e.g., the second phase shifter 2132 of the first transceiving processing group 211) is electrically connected to the first input end 1111 of the first power amplifier 111 of the transmitting unit 11 corresponding to one rf front-end circuit 1 (e.g., the first rf front-end circuit 1) of the plurality of rf front-end circuits 1, the second variable gain amplifier 2131 is configured to perform gain adjustment on the received signal (e.g., the rf output signal transmitted by the power divider 212), and the second phase shifter 2132 is configured to perform gain adjustment on the received signal (e.g., the rf output signal transmitted by the second variable gain amplifier 2131) Number) to perform phase adjustment.
Therefore, the radio frequency front-end device 2 of the present invention can be applied to the millimeter wave frequency band to the terahertz wave frequency band, and can achieve the effect of greatly reducing the power difference when operating in different frequency bands, and also effectively simplify the circuit design and reduce the cost.
Fig. 4 is a block diagram of a radio frequency front-end system according to a third embodiment of the present invention, with reference to fig. 1A, fig. 1B, and fig. 3A. The present invention also provides an rf front-end system 3, as shown in the figure, the rf front-end system 3 includes a power divider 31 and a plurality of rf front-end devices 2, the power divider 31 is a one-to-many power divider (such as a pair of six or a pair of eight power dividers), and the power divider 31 of the embodiment has the same function as the power divider 212 of the second embodiment, so as to combine a plurality of rf signals (such as rf input signals) into a single rf signal, or distribute a single rf signal (such as rf output signal transmitted by the signal processing unit 5) into a plurality of rf signals, for example, the power divider 31 combines rf input signals transmitted by respective antennas 4 received by a plurality of rf front-end devices 2 into a single rf input signal and transmits the single rf input signal to the signal processing unit 5, or the power divider 31 distributes rf output signals transmitted by the signal processing unit 5 into a plurality of paths (or a plurality of paths) according to a single rf output signal transmitted by the signal processing unit 5 The rf output signals are sent to the corresponding rf front-end devices 2. And the power divider 31 described above in this embodiment is also referred to as a power divider/combiner (e.g., Wilkinson power divider/combiner). The power divider 31 is electrically connected to the rf front-end devices 2. The rf front-end device 2 of the second embodiment is provided by the present invention.
Therefore, the rf front-end system 3 according to the present invention adopts the design of the rf front-end device 2 provided by the present invention to be applied to the millimeter wave and terahertz wave system (not shown), so that the millimeter wave and terahertz wave system (such as a radar detection system for a vehicle or a wireless communication system) can be applied to the millimeter wave band to the terahertz wave band, and when operating in different bands, the effect of greatly reducing the power difference can be achieved, and the circuit design can be effectively simplified and the cost can be reduced.
Claims (19)
1. A radio frequency front end circuit of millimeter waves and terahertz waves is characterized by comprising:
the transmitting unit is used for transmitting a radio frequency output signal and is provided with a plurality of power amplifiers which are connected in series, the power amplifiers are provided with a first matching circuit, a second matching circuit, a first load circuit and a first transistor, the first transistor is provided with a first end, a second end and a third end, the first end is electrically connected with the first matching circuit and the second matching circuit, and the second end and the third end are respectively electrically connected with a grounding end and the first load circuit;
a receiving unit, for receiving a radio frequency input signal, the receiving unit having a plurality of low noise amplifiers connected in series, the plurality of low noise amplifiers having a third matching circuit, a fourth matching circuit, a second load circuit and a second transistor, the second transistor having a first end, a second end and a third end, the first end of the second transistor being electrically connected to the third and fourth matching circuits, the second and third ends of the second transistor being electrically connected to the ground terminal and the second load circuit, respectively; and
and the receiving and transmitting switch is electrically connected between an antenna and the transmitting unit and the receiving unit and used for selectively conducting the electrical connection between the transmitting unit and the antenna or conducting the electrical connection between the receiving unit and the antenna.
2. The rf front-end circuit of claim 1, wherein the plurality of power amplifiers has a first input terminal and a first output terminal, the first output terminal of a previous power amplifier is electrically connected to the first input terminal of a next power amplifier in every two adjacent power amplifiers, the first matching circuit comprises a first capacitor and a first inductor, one end of the first capacitor is electrically connected to the first input terminal, the other end of the first capacitor is electrically connected to one end of the first inductor, the other end of the first inductor is electrically connected to the first terminal of the first transistor, and the third terminal of the first transistor is electrically connected to the first output terminal.
3. The rf front-end circuit of claim 2, wherein the second matching circuit comprises a second capacitor and a second inductor, one end of the second capacitor is electrically connected to one end of the second inductor and the first end of the first transistor, and the other end of the second capacitor is electrically connected to the other end of the second inductor and the ground.
4. The RF front-end circuit of claim 3, wherein the first load circuit comprises a first resistor and a first load inductor, two ends of the first resistor are electrically connected to a reference power source and one end of the first load inductor, respectively, and the other end of the first load inductor is electrically connected to the third end of the first transistor.
5. The RF front-end circuit of claim 4, wherein the plurality of low noise amplifiers has a second input terminal and a second output terminal, the second input terminal of a previous low noise amplifier is electrically connected to the second output terminal of a next low noise amplifier in every two adjacent low noise amplifiers, the third matching circuit comprises a third capacitor and a third inductor, one end of the third capacitor is electrically connected to the second input terminal, the other end of the third capacitor is electrically connected to one end of the third inductor, the other end of the third inductor is electrically connected to the first end of the second transistor, and the third end of the second transistor is electrically connected to the second output terminal.
6. The RF front-end circuit of claim 5, wherein the fourth matching circuit comprises a fourth capacitor and a fourth inductor, one end of the fourth capacitor is electrically connected to one end of the fourth inductor and the first end of the second transistor, and the other end of the fourth capacitor is electrically connected to the other end of the fourth inductor and the ground.
7. The RF front-end circuit of claim 6, wherein the second load circuit comprises a second resistor and a second load inductor, two ends of the second resistor are electrically connected to the reference power source and one end of the second load inductor, respectively, and the other end of the second load inductor is electrically connected to the third end of the second transistor.
8. The RF front-end circuit of claim 7, wherein the switch has a first switch end electrically connected to the first output end of the last one of the plurality of power amplifiers, a second switch end electrically connected to the second input end of the last one of the plurality of low noise amplifiers, and a connection end electrically connected to the antenna, and a connection end for selectively connecting the transmission unit and the antenna or the reception unit and the antenna by selectively connecting any one of the first and second switch ends to the connection end.
9. The RF front-end circuit of claim 1, wherein the antenna is a MIMO array antenna.
10. A radio frequency front end device, comprising:
a receiving and transmitting processing unit, having a plurality of receiving and transmitting processing groups and a power divider, the power divider being electrically connected to one end of the corresponding receiving and transmitting processing groups, each receiving and transmitting processing group having a receiving processing part and a transmitting processing part, the receiving processing part having a first variable gain amplifier and a first phase shifter electrically connected to the first variable gain amplifier, the transmitting processing part having a second variable gain amplifier and a second phase shifter electrically connected to the second variable gain amplifier; and
a plurality of rf front-end circuits electrically connected to the other end of the plurality of transceiving processing sets, each of the rf front-end circuits comprising:
a transmitting unit electrically connected to the corresponding transmitting processing part for transmitting a radio frequency output signal, the transmitting unit having a plurality of power amplifiers connected in series, the plurality of power amplifiers having a first matching circuit, a second matching circuit, a first load circuit and a first transistor, the first transistor having a first end, a second end and a third end, the first end being electrically connected to the first and second matching circuits, the second and third ends being electrically connected to a ground terminal and the first load circuit, respectively;
a receiving unit electrically connected to the corresponding receiving processing part for receiving a radio frequency input signal, the receiving unit having a plurality of low noise amplifiers connected in series, the plurality of low noise amplifiers having a third matching circuit, a fourth matching circuit, a second load circuit and a second transistor, the second transistor having a first end, a second end and a third end, the first end of the second transistor being electrically connected to the third and fourth matching circuits, the second and third ends of the second transistor being electrically connected to the ground terminal and the second load circuit, respectively; and
and the receiving and transmitting switch is electrically connected between an antenna and the transmitting unit and the receiving unit and used for selectively conducting the electrical connection between the transmitting unit and the antenna or conducting the electrical connection between the receiving unit and the antenna.
11. The rf front-end apparatus of claim 10, wherein the plurality of power amplifiers has a first input terminal and a first output terminal, the first output terminal of a previous power amplifier in every two adjacent power amplifiers is electrically connected to the first input terminal of a next power amplifier, the first matching circuit comprises a first capacitor and a first inductor, one end of the first capacitor is electrically connected to the first input terminal, the other end of the first capacitor is electrically connected to one end of the first inductor, the other end of the first inductor is electrically connected to the first end of the first transistor, and the third end of the first transistor is electrically connected to the first output terminal.
12. The rf front-end device of claim 11, wherein the second matching circuit comprises a second capacitor and a second inductor, one end of the second capacitor is electrically connected to one end of the second inductor and the first end of the first transistor, and the other end of the second capacitor is electrically connected to the other end of the second inductor and the ground.
13. The rf front-end device of claim 12, wherein the first load circuit comprises a first resistive element and a first load inductive element, two ends of the first resistive element are electrically connected to a reference power source and one end of the first load inductive element, respectively, and the other end of the first load inductive element is electrically connected to the third end of the first transistor.
14. The rf front-end device of claim 13, wherein the plurality of low noise amplifiers has a second input terminal and a second output terminal, the second input terminal of a previous low noise amplifier in every two adjacent low noise amplifiers is electrically connected to the second output terminal of a next low noise amplifier, the third matching circuit comprises a third capacitor and a third inductor, one end of the third capacitor is electrically connected to the second input terminal, the other end of the third capacitor is electrically connected to one end of the third inductor, the other end of the third inductor is electrically connected to the first end of the second transistor, and the third end of the second transistor is electrically connected to the second output terminal.
15. The rf front-end device of claim 14, wherein the fourth matching circuit comprises a fourth capacitor and a fourth inductor, one end of the fourth capacitor is electrically connected to one end of the fourth inductor and the first end of the second transistor, and the other end of the fourth capacitor is electrically connected to the other end of the fourth inductor and the ground.
16. The rf front-end device of claim 15, wherein the second load circuit comprises a second resistive element and a second load inductive element, two ends of the second resistive element are electrically connected to the reference power source and one end of the second load inductive element, respectively, and the other end of the second load inductive element is electrically connected to the third end of the second transistor.
17. The radio frequency front-end device of claim 16, wherein the transceiving switch has a first switch end, a second switch end and a connection end, the first switch end is electrically connected to the first output end of the last of the plurality of power amplifiers, the second switch end is electrically connected to the second input end of the last of the plurality of low noise amplifiers, the connection end is electrically connected to the antenna, and the transceiving switch selectively turns on the electrical connection between the connection end and any one of the first and second switch ends, thereby selectively turning on the electrical connection between the transmitting unit and the antenna or turning on the electrical connection between the receiving unit and the antenna.
18. The radio frequency front-end device of claim 10, wherein the antenna is a multiple-input multiple-output array antenna.
19. A radio frequency front end system comprising a power splitter and a plurality of radio frequency front end devices according to any of claims 10-18, the plurality of radio frequency front end devices being electrically connected to the power splitter.
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| CN202010120924.0A CN111541431A (en) | 2020-02-26 | 2020-02-26 | Radio frequency front end circuit, radio frequency front end device and system of millimeter waves and terahertz waves |
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| CN202010120924.0A CN111541431A (en) | 2020-02-26 | 2020-02-26 | Radio frequency front end circuit, radio frequency front end device and system of millimeter waves and terahertz waves |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112769445A (en) * | 2020-12-31 | 2021-05-07 | 维沃移动通信有限公司 | Radio frequency circuit, signal transmitting method and electronic equipment |
| CN113325417A (en) * | 2021-05-24 | 2021-08-31 | 西安空间无线电技术研究所 | Millimeter wave and terahertz multi-band radar detection imaging system and method |
| CN114665903A (en) * | 2020-12-23 | 2022-06-24 | 大唐移动通信设备有限公司 | Millimeter wave front end processing circuit |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006340268A (en) * | 2005-06-06 | 2006-12-14 | Matsushita Electric Ind Co Ltd | Transmission/reception circuit and wireless communication device using the same |
| CN102356556A (en) * | 2009-02-06 | 2012-02-15 | Rfaxis股份有限公司 | Radio frequency transceiver front end circuit |
| CN108270453A (en) * | 2018-04-03 | 2018-07-10 | 杭州臻镭微波技术有限公司 | The RF front end structure that a kind of single antenna is received and dispatched parallel |
| CN109150227A (en) * | 2018-08-06 | 2019-01-04 | 安徽矽磊电子科技有限公司 | A kind of multimode radio-frequency front end circuit and its control method |
| CN109474242A (en) * | 2018-09-26 | 2019-03-15 | 安徽矽芯微电子科技有限公司 | A kind of millimeter wave amplifier circuit in low noise |
| CN110492853A (en) * | 2018-05-15 | 2019-11-22 | 株式会社村田制作所 | Power amplifier |
| TW202002531A (en) * | 2018-06-06 | 2020-01-01 | 國立暨南國際大學 | Radio-frequency transceiver front-end circuit |
-
2020
- 2020-02-26 CN CN202010120924.0A patent/CN111541431A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006340268A (en) * | 2005-06-06 | 2006-12-14 | Matsushita Electric Ind Co Ltd | Transmission/reception circuit and wireless communication device using the same |
| CN102356556A (en) * | 2009-02-06 | 2012-02-15 | Rfaxis股份有限公司 | Radio frequency transceiver front end circuit |
| CN108270453A (en) * | 2018-04-03 | 2018-07-10 | 杭州臻镭微波技术有限公司 | The RF front end structure that a kind of single antenna is received and dispatched parallel |
| CN110492853A (en) * | 2018-05-15 | 2019-11-22 | 株式会社村田制作所 | Power amplifier |
| TW202002531A (en) * | 2018-06-06 | 2020-01-01 | 國立暨南國際大學 | Radio-frequency transceiver front-end circuit |
| CN109150227A (en) * | 2018-08-06 | 2019-01-04 | 安徽矽磊电子科技有限公司 | A kind of multimode radio-frequency front end circuit and its control method |
| CN109474242A (en) * | 2018-09-26 | 2019-03-15 | 安徽矽芯微电子科技有限公司 | A kind of millimeter wave amplifier circuit in low noise |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114665903A (en) * | 2020-12-23 | 2022-06-24 | 大唐移动通信设备有限公司 | Millimeter wave front end processing circuit |
| WO2022134835A1 (en) * | 2020-12-23 | 2022-06-30 | 大唐移动通信设备有限公司 | Millimeter wave front-end processing circuit |
| CN112769445A (en) * | 2020-12-31 | 2021-05-07 | 维沃移动通信有限公司 | Radio frequency circuit, signal transmitting method and electronic equipment |
| CN113325417A (en) * | 2021-05-24 | 2021-08-31 | 西安空间无线电技术研究所 | Millimeter wave and terahertz multi-band radar detection imaging system and method |
| CN113325417B (en) * | 2021-05-24 | 2024-03-15 | 西安空间无线电技术研究所 | Millimeter wave and terahertz multi-band radar detection imaging system and method |
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