CN111537098B - Flexible capacitive temperature sensor and manufacturing method thereof - Google Patents
Flexible capacitive temperature sensor and manufacturing method thereof Download PDFInfo
- Publication number
- CN111537098B CN111537098B CN202010270263.XA CN202010270263A CN111537098B CN 111537098 B CN111537098 B CN 111537098B CN 202010270263 A CN202010270263 A CN 202010270263A CN 111537098 B CN111537098 B CN 111537098B
- Authority
- CN
- China
- Prior art keywords
- boron nitride
- hexagonal boron
- mxene
- pvdf
- temperature sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/34—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using capacitative elements
- G01K7/343—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using capacitative elements the dielectric constant of which is temperature dependant
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
The invention discloses a flexible capacitive temperature sensor and a manufacturing method thereof, wherein the flexible capacitive temperature sensor is a sandwich structure of an in-line hexagonal boron nitride/PVDF film layer, an MXene/PVA film layer and a hexagonal boron nitride/PVDF film layer, and the upper outer surface and the lower outer surface of the sandwich structure are respectively plated with a gold electrode to form an upper electrode and a lower electrode of the flexible capacitive temperature sensor; interface polarization exists between the MXene/PVA film of the middle layer, the MXene with high conductivity and the polymer matrix with high insulation, so that higher dielectric constant can be provided and the dielectric constant is greatly changed along with the temperature change; the upper layer and the lower layer are hexagonal boron nitride/PVDF films, the hexagonal boron nitride can inhibit charges on the electrodes from being input into the medium, and the interlayer structure enables a barrier effect to occur between the layers, enhances charge capture, enables the charge capture to obtain high breakdown strength and protects the device under the condition of a high electric field.
Description
Technical Field
The invention relates to the technical field of preparation of nano materials and nano functional devices, in particular to a flexible capacitive temperature sensor and a manufacturing method thereof.
Background
The sensor is a detection device which can sense measured information and convert the sensed information into an electric signal or other information in a required form to be output so as to meet the requirements of information transmission, processing, storage, display, recording, control and the like, in other words, the sensor is like a sensing organ such as human five sense organs and the like. The sensor has the characteristics of miniaturization, digitalization, intellectualization, multifunction, systematization and networking. The method is the first link for realizing automatic detection and automatic control. The existence and development of the sensor enable the object to have the senses of touch, taste, smell and the like, and the object slowly becomes alive. At present, sensors are widely applied to various fields of social development and human life, such as industrial automation, aerospace technology, military engineering, robotics, ocean exploration, environmental monitoring, security, medical diagnosis and the like.
With the advent of integrated circuits in recent years, capacitive sensors have been developed to overcome their inherent shortcomings, and have become a very versatile and potentially viable sensor. The capacitive sensor can be classified into a polar distance variation type, an area variation type and a medium variation type. The polar distance changing type is generally used to measure a minute linear displacement or a polar distance change due to an external force, pressure, vibration, or the like, such as a capacitive pressure sensor. The area change type is generally used to measure angular displacement or large linear displacement. The medium change type is commonly used for level measurement and determination of temperature, density and humidity of various media. The capacitive sensor has been receiving more and more attention from the scientific research community because of its characteristics such as high impedance, low power, simple structure, strong adaptability.
With the development and application requirements of wearable devices, the development of flexible devices is receiving more and more attention. Polymer dielectrics have been increasingly valued in the field of flexible devices because of their ultra-high intrinsic breakdown strength and their flexibility. However, the dielectric constant of the polymer is low, and the energy density of the discharge does not reach an ideal level, so that the development of the polymer is limited. It has been reported that in order to obtain a higher dielectric constant, conductive fillers such as carbon nanotubes and MXene are added to polymers such as PVDF and PVA to obtain a capacitor with better performance. Experiments show that after the conductive filler is added, although a high dielectric constant can be obtained, the breakdown strength of the capacitor is greatly reduced, and the capacitor cannot normally work under high electric field intensity.
Disclosure of Invention
The invention provides a flexible capacitive temperature sensor and a manufacturing method thereof, aiming at solving the problem that the existing flexible capacitive sensor cannot have higher dielectric constant, lower dielectric loss and higher breakdown strength.
In order to achieve the above purpose, the technical means adopted is as follows:
the flexible capacitive temperature sensor is of a sandwich structure of an in-line hexagonal boron nitride/PVDF (polyvinylidene fluoride) film layer, an MXene/PVA (polyvinyl acetate) film layer and a hexagonal boron nitride/PVDF film layer, and the upper outer surface and the lower outer surface of the sandwich structure are respectively plated with a gold electrode to form an upper electrode and a lower electrode of the flexible capacitive temperature sensor.
In the above scheme, the sandwich structure of the flexible capacitive temperature sensor: the middle layer is an MXene/PVA film, and interface polarization exists between the MXene with high conductivity and the polymer matrix with high insulativity, so that a high dielectric constant can be provided and is greatly changed along with the temperature change; the upper layer and the lower layer are hexagonal boron nitride/PVDF films, the hexagonal boron nitride can inhibit charges on the electrodes from being input into the medium, and the interlayer structure enables barrier effect to occur between the layers, so that the layers can obtain high breakdown strength and protect the device under the condition of high electric field. Therefore, the flexible capacitive temperature sensor has good flexibility, can detect the temperature change in a certain temperature range, and has higher dielectric constant, lower dielectric loss and higher breakdown strength.
Preferably, in the hexagonal boron nitride/PVDF thin film layer, the hexagonal boron nitride content is 8.0 wt%. In the preferred scheme, the content of 8.0 wt% of hexagonal boron nitride can improve the breakdown strength of the capacitor and obtain a high dielectric coefficient, so that the flexible capacitive temperature sensor has better performance.
Preferably, the MXene content in the MXene/PVA film layer is 2.5 wt%. In the preferred embodiment, the dielectric constant of the capacitor is ideal and the dielectric loss is lowest under the MXene content of 2.5 wt%, so that the flexible capacitive temperature sensor has better performance.
The invention also provides a manufacturing method of the flexible capacitive temperature sensor, which comprises the following steps:
s1, taking a glass slide, sequentially putting the glass slide into absolute ethyl alcohol and DI water for ultrasonic cleaning, and then putting the glass slide into a blast drying oven for drying and keeping the constant temperature at 70 ℃;
s2, coating the pre-configured hexagonal boron nitride/PVDF mixed solution on the glass slide obtained in the step S1, and drying at 70 ℃ in a drying box to obtain a hexagonal boron nitride/PVDF film with the hexagonal boron nitride content of 8.0 wt%;
s3, annealing the dried and cured hexagonal boron nitride/PVDF film;
s4, carrying out ultrasonic treatment on the pre-configured MXene/PVA mixed suspension to fully mix the suspension;
s5, coating the MXene/PVA mixed suspension on the hexagonal boron nitride/PVDF film obtained in the step S3, and drying at 40 ℃ to obtain an MXene/PVA film with the MXene content of 2.5 wt%;
s6, repeating the steps S2 and S3, coating the obtained hexagonal boron nitride/PVDF film on the structure formed in the step S5, and preparing sandwich structures of the ordered hexagonal boron nitride/PVDF film layer, the MXene/PVA film layer and the hexagonal boron nitride/PVDF film layer;
and S7, plating gold electrodes on the upper and lower outer surfaces of the sandwich structure by using a sputtering coating technology.
In the scheme, the flexible capacitive temperature sensor prepared by the method has the advantages that firstly, an MXene/PVA film is arranged in the middle, interfacial polarization exists between the MXene with high conductivity and the polymer matrix with high insulation, high dielectric constant can be provided, and the dielectric constant is greatly changed along with temperature change; the upper layer and the lower layer are hexagonal boron nitride/PVDF films, the hexagonal boron nitride can inhibit charges on the electrodes from being input into the medium, and the interlayer structure enables barrier effect to occur between the layers, so that the layers can obtain high breakdown strength and protect the device under the condition of high electric field. Therefore, the flexible capacitive temperature sensor has good flexibility, can detect the temperature change in a certain temperature range, and has higher dielectric constant, lower dielectric loss and higher breakdown strength.
Preferably, the step S1 specifically includes: and (3) putting a glass slide into absolute ethyl alcohol and DI water successively, respectively, carrying out ultrasonic cleaning for 20min, and then putting the glass slide into a forced air drying oven to dry and keep the constant temperature at 70 ℃. In the preferred scheme, the carrier plate is preheated and insulated to 70 ℃, and the mixed solution is coated subsequently, so that the conditions that the shrinkage is uneven and the device is bent due to overlarge temperature difference of the upper surface and the lower surface of the device in the device drying process can be avoided.
Preferably, the pre-configuring step of the hexagonal boron nitride/PVDF mixed solution comprises: weighing 2.5g of PVDF powder, and completely dissolving the PVDF powder in a DMF solvent at 60 ℃ by magnetic stirring to obtain a PVDF solution; weighing 0.2g of hexagonal boron nitride nanosheet, and dissolving the hexagonal boron nitride nanosheet in a DMF solution through ultrasonic treatment to obtain a hexagonal boron nitride suspension; and mixing the PVDF solution and the hexagonal boron nitride suspension, and stirring by magnetic force at room temperature until the mixed solution is free from bubbles.
Preferably, the step S3 specifically includes: and placing the dried and cured hexagonal boron nitride/PVDF film in a decompression furnace to anneal for 6 hours at 180 ℃. In the preferred scheme, the annealing treatment can eliminate residual stress, stabilize the size of the film, reduce the deformation and crack tendency, and homogenize the structure and components of the material to improve the material performance.
Preferably, the pre-configuring step of the MXene/PVA mixed suspension comprises: weighing 0.1g of MXene powder, and dissolving in DI water to obtain MXene solution; 4g of PVA solution was added to the MXene solution to mix, and the mixed solution was subjected to ultrasonic treatment.
Compared with the prior art, the technical scheme of the invention has the beneficial effects that:
according to the flexible capacitive temperature sensor and the manufacturing method thereof, firstly, an MXene/PVA film is arranged in the middle of the flexible capacitive temperature sensor, interface polarization exists between the MXene with high conductivity and a polymer matrix with high insulativity, a high dielectric constant can be provided, and the dielectric constant is greatly changed along with the temperature change; the upper layer and the lower layer are hexagonal boron nitride/PVDF films, the hexagonal boron nitride can inhibit charges on the electrodes from being input into the medium, and the interlayer structure enables barrier effect to occur between the layers, so that the layers can obtain high breakdown strength and protect the device under the condition of high electric field. Therefore, the flexible capacitive temperature sensor has good flexibility, can detect the temperature change in a certain temperature range, and has higher dielectric constant, lower dielectric loss and higher breakdown strength.
Drawings
Fig. 1 is a schematic three-dimensional structure diagram of the capacitive temperature sensor according to embodiment 1.
Fig. 2 is a flowchart of a method for manufacturing the capacitive temperature sensor according to embodiment 2.
Fig. 3 is a process diagram of the capacitive sensor of example 2.
FIG. 4 shows the change of dielectric constant with temperature of the mixed solutions of PVA and MXene/PVA in example 2.
Detailed Description
The drawings are for illustrative purposes only and are not to be construed as limiting the patent;
for the purpose of better illustrating the embodiments, certain features of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product;
it will be understood by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted.
The technical solution of the present invention is further described below with reference to the accompanying drawings and examples.
Example 1
As shown in fig. 1, the flexible capacitive temperature sensor is a sandwich structure of hexagonal boron nitride/PVDF film layers, MXene/PVA film layers, and hexagonal boron nitride/PVDF film layers arranged in a row, and gold electrodes are respectively plated on the upper and lower outer surfaces of the sandwich structure to form the upper and lower electrodes of the flexible capacitive temperature sensor.
In the sandwich structure of the flexible capacitive temperature sensor, the middle layer is an MXene/PVA film, interface polarization exists between the MXene with high conductivity and the polymer matrix with high insulation, when the temperature exceeds 60 ℃, the dielectric constant is sharply increased, and the dielectric constant is remarkably increased due to the rapid increase of the PVA matrix. Meanwhile, MXene nanosheets are added into PVA, a high dielectric constant can be obtained due to the electroosmotic flow behavior among filling particles and the interfacial polarization effect between the conductive particle phase and the polymer phase, and due to the fact that a large amount of interfacial polarization is introduced, the dipole reversal between the two phases is enhanced when the temperature rises, and therefore the dielectric constant is increased faster than that when no MXene nanosheets are introduced. The upper layer and the lower layer in the sandwich structure are hexagonal boron nitride/PVDF films, on one hand, charge on an electrode can be prevented from being injected into a medium by the hexagonal boron nitride, and on the other hand, the interface barrier effect between the sandwich structure layers can be avoided, so that the device can obtain high breakdown strength and can work under high electric field intensity.
In addition, in the hexagonal boron nitride/PVDF thin film layer, the hexagonal boron nitride content is 8.0 wt%, and the hexagonal boron nitride content of 8.0 wt% can not only improve the breakdown strength of the capacitor, but also obtain a higher dielectric coefficient;
in the MXene/PVA film layer, the content of MXene is 2.5 wt%, and the content of MXene of 2.5 wt% is ideal, the dielectric constant of the capacitor is ideal, and the dielectric loss is lowest, so that the flexible capacitive temperature sensor has better performance.
The flexible capacitive temperature sensor of the embodiment has good flexibility, can detect the temperature change in a certain temperature range, and has high dielectric constant, low dielectric loss and high breakdown strength.
Example 2
The manufacturing method of the flexible capacitive temperature sensor, as shown in fig. 2 and 3, includes:
s1, putting a glass slide into absolute ethyl alcohol and DI water successively, performing ultrasonic cleaning for 20min respectively, and then putting the glass slide into a forced air drying oven to dry and keep the constant temperature at 70 ℃; so that the conditions of uneven shrinkage and bending of the device caused by overlarge temperature difference between the upper surface and the lower surface of the device in the drying process after the mixed solution is coated subsequently can not occur;
s2, uniformly and slowly coating the pre-configured hexagonal boron nitride/PVDF mixed solution on the glass slide obtained in the step S1, and drying at 70 ℃ in a drying box to obtain a hexagonal boron nitride/PVDF film with the hexagonal boron nitride content of 8.0 wt%;
s3, placing the dried and cured hexagonal boron nitride/PVDF film in a decompression furnace, and annealing for 6 hours at 180 ℃ to eliminate residual stress, stabilize the size and reduce deformation and crack tendency, and on the other hand, the material structure and components can be uniform, and the material performance can be improved;
s4, carrying out ultrasonic treatment on the pre-configured MXene/PVA mixed suspension to fully mix the suspension;
s5, coating the MXene/PVA mixed suspension on the hexagonal boron nitride/PVDF film obtained in the step S3, and drying at 40 ℃ to obtain an MXene/PVA film with the MXene content of 2.5 wt%;
s6, repeating the steps S2 and S3, coating the obtained hexagonal boron nitride/PVDF film on the structure formed in the step S5, and preparing sandwich structures of the ordered hexagonal boron nitride/PVDF film layer, the MXene/PVA film layer and the hexagonal boron nitride/PVDF film layer;
and S7, plating gold electrodes on the upper and lower outer surfaces of the sandwich structure by using a sputtering coating technology.
The pre-configuration step of the hexagonal boron nitride/PVDF mixed solution comprises the following steps: weighing 2.5g of PVDF powder, and completely dissolving the PVDF powder in a DMF solvent at 60 ℃ by magnetic stirring to obtain a PVDF solution; weighing 0.2g of hexagonal boron nitride nanosheet, and dissolving the hexagonal boron nitride nanosheet in a DMF solution through ultrasonic treatment to obtain a hexagonal boron nitride suspension; and mixing the PVDF solution and the hexagonal boron nitride suspension, and stirring by magnetic force at room temperature until the mixed solution is free from bubbles.
The pre-configuration step of the MXene/PVA mixed suspension comprises the following steps: weighing 0.1g of MXene powder, and dissolving in DI water to obtain MXene solution; 4g of PVA solution was added to the MXene solution to mix, and the mixed solution was subjected to ultrasonic treatment. As shown in fig. 4, which is a schematic diagram of the change of the dielectric constant of the mixed solution with temperature, it can be seen that when the temperature exceeds 60 ℃, the dielectric constant is sharply increased, thereby being suitable for detecting the change of the temperature.
The manufacturing method of the flexible capacitive temperature sensor is simple in manufacturing process and easy to operate, and the manufactured flexible capacitive temperature sensor is good in flexibility and can be freely bent; the temperature change is detected within a certain temperature range, and the thermal sensitivity is high; and can work normally under the high electric field environment, has higher dielectric constant.
The terms describing positional relationships in the drawings are for illustrative purposes only and are not to be construed as limiting the patent;
it should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (8)
1. The flexible capacitive temperature sensor is characterized in that the flexible capacitive temperature sensor is of a sandwich structure of a hexagonal boron nitride/PVDF thin film layer, an MXene/PVA thin film layer and a hexagonal boron nitride/PVDF thin film layer which are arranged in sequence, and the upper outer surface and the lower outer surface of the sandwich structure are respectively plated with gold electrodes to form the upper electrode and the lower electrode of the flexible capacitive temperature sensor.
2. The flexible capacitive temperature sensor of claim 1, wherein the hexagonal boron nitride/PVDF thin film layer has a hexagonal boron nitride content of 8.0 wt%.
3. The flexible capacitive temperature sensor according to claim 1, wherein the MXene content in the MXene/PVA film layer is 2.5 wt%.
4. The manufacturing method of the flexible capacitive temperature sensor is characterized by comprising the following steps:
s1, taking a glass slide, sequentially putting the glass slide into absolute ethyl alcohol and DI water for ultrasonic cleaning, and then putting the glass slide into a blast drying oven for drying and keeping the constant temperature at 70 ℃;
s2, coating the pre-configured hexagonal boron nitride/PVDF mixed solution on the glass slide obtained in the step S1, and drying at 70 ℃ in a drying box to obtain a hexagonal boron nitride/PVDF film with the hexagonal boron nitride content of 8.0 wt%;
s3, annealing the dried and cured hexagonal boron nitride/PVDF film;
s4, carrying out ultrasonic treatment on the pre-configured MXene/PVA mixed suspension to fully mix the suspension;
s5, coating the MXene/PVA mixed suspension on the hexagonal boron nitride/PVDF film obtained in the step S3, and drying at 40 ℃ to obtain an MXene/PVA film with the MXene content of 2.5 wt%;
s6, repeating the steps S2 and S3, coating the obtained hexagonal boron nitride/PVDF film on the structure formed in the step S5, and preparing sandwich structures of the ordered hexagonal boron nitride/PVDF film layer, the MXene/PVA film layer and the hexagonal boron nitride/PVDF film layer;
and S7, plating gold electrodes on the upper and lower outer surfaces of the sandwich structure by using a sputtering coating technology.
5. The method for manufacturing a flexible capacitive temperature sensor according to claim 4, wherein the step S1 specifically comprises: and (3) putting a glass slide into absolute ethyl alcohol and DI water successively, respectively, carrying out ultrasonic cleaning for 20min, and then putting the glass slide into a forced air drying oven to dry and keep the constant temperature at 70 ℃.
6. The method of claim 4, wherein the pre-configuring of the hexagonal boron nitride/PVDF mixed solution comprises: weighing 2.5g of PVDF powder, and completely dissolving the PVDF powder in a DMF solvent at 60 ℃ by magnetic stirring to obtain a PVDF solution; weighing 0.2g of hexagonal boron nitride nanosheet, and dissolving the hexagonal boron nitride nanosheet in a DMF solution through ultrasonic treatment to obtain a hexagonal boron nitride suspension; and mixing the PVDF solution and the hexagonal boron nitride suspension, and stirring by magnetic force at room temperature until the mixed solution is free from bubbles.
7. The method for manufacturing a flexible capacitive temperature sensor according to claim 4, wherein the step S3 specifically comprises: and placing the dried and cured hexagonal boron nitride/PVDF film in a decompression furnace to anneal for 6 hours at 180 ℃.
8. The method of claim 4, wherein the pre-configuring step of the MXene/PVA mixed suspension comprises: weighing 0.1g of MXene powder, and dissolving in DI water to obtain MXene solution; 4g of PVA solution was added to the MXene solution to mix, and the mixed solution was subjected to ultrasonic treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010270263.XA CN111537098B (en) | 2020-04-08 | 2020-04-08 | Flexible capacitive temperature sensor and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010270263.XA CN111537098B (en) | 2020-04-08 | 2020-04-08 | Flexible capacitive temperature sensor and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111537098A CN111537098A (en) | 2020-08-14 |
| CN111537098B true CN111537098B (en) | 2021-07-13 |
Family
ID=71973206
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010270263.XA Expired - Fee Related CN111537098B (en) | 2020-04-08 | 2020-04-08 | Flexible capacitive temperature sensor and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111537098B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112611923B (en) * | 2020-11-24 | 2023-05-05 | 安徽大学 | Intelligent module, multifunctional device and application thereof in wireless charging, electric field sensing and proximity sensing |
| CN115889141B (en) * | 2022-07-29 | 2024-03-29 | 武汉大学 | Method for improving insulation performance of metal/insulator by using two-dimensional material |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019017045A1 (en) * | 2017-07-20 | 2019-01-24 | アルプス電気株式会社 | Temperature sensor |
| CN109671949A (en) * | 2018-12-12 | 2019-04-23 | 福建翔丰华新能源材料有限公司 | A kind of MXene base flexible compound negative electrode material and preparation method thereof |
| CN109764971A (en) * | 2019-01-14 | 2019-05-17 | 京东方科技集团股份有限公司 | Flexibility temperature sensor and preparation method thereof and flexible apparatus |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140154808A1 (en) * | 2012-12-03 | 2014-06-05 | Gordhanbhai N. Patel | Monitoring system based on etching of metals |
| US9515243B2 (en) * | 2014-12-22 | 2016-12-06 | Infineon Technologies Ag | Temperature sensor |
| CN108962595A (en) * | 2018-07-18 | 2018-12-07 | 清华大学 | A kind of large-scale preparation method of high-performance high temperature capacitors film |
-
2020
- 2020-04-08 CN CN202010270263.XA patent/CN111537098B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019017045A1 (en) * | 2017-07-20 | 2019-01-24 | アルプス電気株式会社 | Temperature sensor |
| CN109671949A (en) * | 2018-12-12 | 2019-04-23 | 福建翔丰华新能源材料有限公司 | A kind of MXene base flexible compound negative electrode material and preparation method thereof |
| CN109764971A (en) * | 2019-01-14 | 2019-05-17 | 京东方科技集团股份有限公司 | Flexibility temperature sensor and preparation method thereof and flexible apparatus |
Non-Patent Citations (1)
| Title |
|---|
| Room Temperature Gas Sensing of Two-Dimensional Titanium Carbide (MXene);Eunji Lee;《ACS Appl. Mater. Interfaces》;20170927;第37184-37190页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111537098A (en) | 2020-08-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Hashim et al. | Novel pressure sensors made from nanocomposites (biodegradable polymers–metal oxide nanoparticles): fabrication and characterization | |
| CN111537098B (en) | Flexible capacitive temperature sensor and manufacturing method thereof | |
| US5702629A (en) | Piezeoelectric ceramic-polymer composites | |
| Wu et al. | Rational design of flexible capacitive sensors with highly linear response over a broad pressure sensing range | |
| CN113218543B (en) | Flexible pressure sensor, dielectric layer thereof and preparation method of dielectric layer | |
| CN106915960B (en) | Lead-free ceramic material with high energy storage density and energy storage efficiency and preparation method thereof | |
| CN108548619B (en) | Method for improving sensitivity of piezoresistive sensor based on fragmented structure | |
| Hu et al. | Increased effective piezoelectric response of structurally modulated P (VDF-TrFE) film devices for effective energy harvesters | |
| Zhao et al. | Tissue‐Like Sodium Alginate‐Coated 2D MXene‐Based Flexible Temperature Sensors for Full‐Range Temperature Monitoring | |
| CN107857960A (en) | A kind of Piezoelectric anisotropy film being modified based on graphene and its preparation method and application | |
| Xu et al. | Performance characterization of ionic-hydrogel based strain sensors | |
| Xi et al. | Effects of cold work, stress and temperature on the dielectric behavior of copper | |
| Dayananda et al. | MXene-based flexible polymer composites as high dielectric constant materials | |
| AU2021103686A4 (en) | A flexible temperature sensor based on graphene nanowall | |
| Moharana et al. | Novel three phase polyvinyl alcohol (PVA)-nanographite (GNP)-Pb (ZrTi) O3 (PZT) composites with high dielectric permittivity | |
| CN116147796A (en) | Self-powered flexible sensor based on pressure and temperature, and manufacturing method and application thereof | |
| Yuan et al. | Unique dielectric properties in polyaniline/poly (vinylidene fluoride) composites induced by temperature variation | |
| Rahimabady et al. | Nanocomposite multilayer capacitors comprising BaTiO 3@ TiO 2 and poly (vinylidene fluoride-hexafluoropropylene) for dielectric-based energy storage | |
| Aggarwal et al. | Fabrication and characterization of flexible films of poly (vinylidene fluoride)/Pb (Fe 0.5 Ti 0.5) O 3− δ multi-ferroic nano-composite | |
| Fan et al. | Highly Sensitive Strain Sensor from Topological‐Structure Modulated Dielectric Elastic Nanocomposites | |
| KR102106269B1 (en) | Generating apparatus including organic thermoelectric device | |
| Sagar et al. | Investigations on Piezoelectric, Dielectric and Mechanical Properties of PVDF/PVC/GO Nanocomposites | |
| KR101914570B1 (en) | Alternating layered semiconductor / conductor nanocomposites having an internal serial connection structure, the fabrication method of the nanocomposites and their applied products. | |
| CN114689217B (en) | Flexible pressure-sensitive layer, preparation method and application | |
| Gassab et al. | Dielectric Study of Cost‐Effective, Eco‐Friendly PVA‐Glycerol Matrices with AgNW Electrodes for Transparent Flexible Humidity Sensors |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20210713 |