CN111537098B - Flexible capacitive temperature sensor and method of making the same - Google Patents
Flexible capacitive temperature sensor and method of making the same Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 229910052582 BN Inorganic materials 0.000 claims abstract description 64
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 64
- 239000002033 PVDF binder Substances 0.000 claims abstract description 54
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims abstract description 53
- 239000010408 film Substances 0.000 claims abstract description 41
- 239000010409 thin film Substances 0.000 claims abstract description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000010931 gold Substances 0.000 claims abstract description 7
- 229910052737 gold Inorganic materials 0.000 claims abstract description 7
- 239000000243 solution Substances 0.000 claims description 19
- 239000000725 suspension Substances 0.000 claims description 17
- 238000001035 drying Methods 0.000 claims description 16
- 239000011259 mixed solution Substances 0.000 claims description 15
- 239000011521 glass Substances 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 239000000843 powder Substances 0.000 claims description 8
- 238000009210 therapy by ultrasound Methods 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 238000005303 weighing Methods 0.000 claims description 8
- 239000002135 nanosheet Substances 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- 230000006837 decompression Effects 0.000 claims description 3
- 238000003760 magnetic stirring Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 14
- 229920000642 polymer Polymers 0.000 abstract description 10
- 230000005684 electric field Effects 0.000 abstract description 7
- 230000010287 polarization Effects 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 6
- 239000011159 matrix material Substances 0.000 abstract description 6
- 230000004888 barrier function Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 33
- 239000011118 polyvinyl acetate Substances 0.000 description 26
- 229920002689 polyvinyl acetate Polymers 0.000 description 26
- 230000008859 change Effects 0.000 description 14
- 239000003990 capacitor Substances 0.000 description 7
- 238000011161 development Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000007605 air drying Methods 0.000 description 2
- 239000011231 conductive filler Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 206010063385 Intellectualisation Diseases 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005370 electroosmosis Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000006855 networking Effects 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 210000000697 sensory organ Anatomy 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000008542 thermal sensitivity Effects 0.000 description 1
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- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/34—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using capacitative elements
- G01K7/343—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using capacitative elements the dielectric constant of which is temperature dependant
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Abstract
本发明公开了柔性电容式温度传感器及其制作方法，该柔性电容式温度传感器为顺排六方氮化硼/PVDF薄膜层、MXene/PVA薄膜层、六方氮化硼/PVDF薄膜层的三明治结构，三明治结构的上下外表面分别镀有金电极，以形成柔性电容式温度传感器的上、下电极；其中间层的MXene/PVA薄膜，高导电性的MXene和高绝缘性的聚合物基体之间存在界面极化，能够提供较高的介电常数并且介电常数随温度变化出现较大变化；而上下两层为六方氮化硼/PVDF薄膜，六方氮化硼可以抑制电极上的电荷输入到介质中，而且夹层结构使得层与层之间出现屏障效应，增强电荷捕获，使其获得高的击穿强度，在高电场条件下保护器件。
The invention discloses a flexible capacitive temperature sensor and a manufacturing method thereof. The flexible capacitive temperature sensor has a sandwich structure of an in-line hexagonal boron nitride/PVDF thin film layer, an MXene/PVA thin film layer, and a hexagonal boron nitride/PVDF thin film layer. The upper and lower outer surfaces of the sandwich structure are respectively plated with gold electrodes to form the upper and lower electrodes of the flexible capacitive temperature sensor; the MXene/PVA film in the middle layer exists between the highly conductive MXene and the highly insulating polymer matrix Interface polarization can provide a higher dielectric constant and the dielectric constant changes greatly with temperature; while the upper and lower layers are hexagonal boron nitride/PVDF films, hexagonal boron nitride can inhibit the charge on the electrode from being input into the medium In addition, the sandwich structure enables a barrier effect between layers, enhances charge trapping, enables it to obtain high breakdown strength, and protects the device under high electric field conditions.
Description
Technical Field
The invention relates to the technical field of preparation of nano materials and nano functional devices, in particular to a flexible capacitive temperature sensor and a manufacturing method thereof.
Background
The sensor is a detection device which can sense measured information and convert the sensed information into an electric signal or other information in a required form to be output so as to meet the requirements of information transmission, processing, storage, display, recording, control and the like, in other words, the sensor is like a sensing organ such as human five sense organs and the like. The sensor has the characteristics of miniaturization, digitalization, intellectualization, multifunction, systematization and networking. The method is the first link for realizing automatic detection and automatic control. The existence and development of the sensor enable the object to have the senses of touch, taste, smell and the like, and the object slowly becomes alive. At present, sensors are widely applied to various fields of social development and human life, such as industrial automation, aerospace technology, military engineering, robotics, ocean exploration, environmental monitoring, security, medical diagnosis and the like.
With the advent of integrated circuits in recent years, capacitive sensors have been developed to overcome their inherent shortcomings, and have become a very versatile and potentially viable sensor. The capacitive sensor can be classified into a polar distance variation type, an area variation type and a medium variation type. The polar distance changing type is generally used to measure a minute linear displacement or a polar distance change due to an external force, pressure, vibration, or the like, such as a capacitive pressure sensor. The area change type is generally used to measure angular displacement or large linear displacement. The medium change type is commonly used for level measurement and determination of temperature, density and humidity of various media. The capacitive sensor has been receiving more and more attention from the scientific research community because of its characteristics such as high impedance, low power, simple structure, strong adaptability.
With the development and application requirements of wearable devices, the development of flexible devices is receiving more and more attention. Polymer dielectrics have been increasingly valued in the field of flexible devices because of their ultra-high intrinsic breakdown strength and their flexibility. However, the dielectric constant of the polymer is low, and the energy density of the discharge does not reach an ideal level, so that the development of the polymer is limited. It has been reported that in order to obtain a higher dielectric constant, conductive fillers such as carbon nanotubes and MXene are added to polymers such as PVDF and PVA to obtain a capacitor with better performance. Experiments show that after the conductive filler is added, although a high dielectric constant can be obtained, the breakdown strength of the capacitor is greatly reduced, and the capacitor cannot normally work under high electric field intensity.
Disclosure of Invention
The invention provides a flexible capacitive temperature sensor and a manufacturing method thereof, aiming at solving the problem that the existing flexible capacitive sensor cannot have higher dielectric constant, lower dielectric loss and higher breakdown strength.
In order to achieve the above purpose, the technical means adopted is as follows:
the flexible capacitive temperature sensor is of a sandwich structure of an in-line hexagonal boron nitride/PVDF (polyvinylidene fluoride) film layer, an MXene/PVA (polyvinyl acetate) film layer and a hexagonal boron nitride/PVDF film layer, and the upper outer surface and the lower outer surface of the sandwich structure are respectively plated with a gold electrode to form an upper electrode and a lower electrode of the flexible capacitive temperature sensor.
In the above scheme, the sandwich structure of the flexible capacitive temperature sensor: the middle layer is an MXene/PVA film, and interface polarization exists between the MXene with high conductivity and the polymer matrix with high insulativity, so that a high dielectric constant can be provided and is greatly changed along with the temperature change; the upper layer and the lower layer are hexagonal boron nitride/PVDF films, the hexagonal boron nitride can inhibit charges on the electrodes from being input into the medium, and the interlayer structure enables barrier effect to occur between the layers, so that the layers can obtain high breakdown strength and protect the device under the condition of high electric field. Therefore, the flexible capacitive temperature sensor has good flexibility, can detect the temperature change in a certain temperature range, and has higher dielectric constant, lower dielectric loss and higher breakdown strength.
Preferably, in the hexagonal boron nitride/PVDF thin film layer, the hexagonal boron nitride content is 8.0 wt%. In the preferred scheme, the content of 8.0 wt% of hexagonal boron nitride can improve the breakdown strength of the capacitor and obtain a high dielectric coefficient, so that the flexible capacitive temperature sensor has better performance.
Preferably, the MXene content in the MXene/PVA film layer is 2.5 wt%. In the preferred embodiment, the dielectric constant of the capacitor is ideal and the dielectric loss is lowest under the MXene content of 2.5 wt%, so that the flexible capacitive temperature sensor has better performance.
The invention also provides a manufacturing method of the flexible capacitive temperature sensor, which comprises the following steps:
s1, taking a glass slide, sequentially putting the glass slide into absolute ethyl alcohol and DI water for ultrasonic cleaning, and then putting the glass slide into a blast drying oven for drying and keeping the constant temperature at 70 ℃;
s2, coating the pre-configured hexagonal boron nitride/PVDF mixed solution on the glass slide obtained in the step S1, and drying at 70 ℃ in a drying box to obtain a hexagonal boron nitride/PVDF film with the hexagonal boron nitride content of 8.0 wt%;
s3, annealing the dried and cured hexagonal boron nitride/PVDF film;
s4, carrying out ultrasonic treatment on the pre-configured MXene/PVA mixed suspension to fully mix the suspension;
s5, coating the MXene/PVA mixed suspension on the hexagonal boron nitride/PVDF film obtained in the step S3, and drying at 40 ℃ to obtain an MXene/PVA film with the MXene content of 2.5 wt%;
s6, repeating the steps S2 and S3, coating the obtained hexagonal boron nitride/PVDF film on the structure formed in the step S5, and preparing sandwich structures of the ordered hexagonal boron nitride/PVDF film layer, the MXene/PVA film layer and the hexagonal boron nitride/PVDF film layer;
and S7, plating gold electrodes on the upper and lower outer surfaces of the sandwich structure by using a sputtering coating technology.
In the scheme, the flexible capacitive temperature sensor prepared by the method has the advantages that firstly, an MXene/PVA film is arranged in the middle, interfacial polarization exists between the MXene with high conductivity and the polymer matrix with high insulation, high dielectric constant can be provided, and the dielectric constant is greatly changed along with temperature change; the upper layer and the lower layer are hexagonal boron nitride/PVDF films, the hexagonal boron nitride can inhibit charges on the electrodes from being input into the medium, and the interlayer structure enables barrier effect to occur between the layers, so that the layers can obtain high breakdown strength and protect the device under the condition of high electric field. Therefore, the flexible capacitive temperature sensor has good flexibility, can detect the temperature change in a certain temperature range, and has higher dielectric constant, lower dielectric loss and higher breakdown strength.
Preferably, the step S1 specifically includes: and (3) putting a glass slide into absolute ethyl alcohol and DI water successively, respectively, carrying out ultrasonic cleaning for 20min, and then putting the glass slide into a forced air drying oven to dry and keep the constant temperature at 70 ℃. In the preferred scheme, the carrier plate is preheated and insulated to 70 ℃, and the mixed solution is coated subsequently, so that the conditions that the shrinkage is uneven and the device is bent due to overlarge temperature difference of the upper surface and the lower surface of the device in the device drying process can be avoided.
Preferably, the pre-configuring step of the hexagonal boron nitride/PVDF mixed solution comprises: weighing 2.5g of PVDF powder, and completely dissolving the PVDF powder in a DMF solvent at 60 ℃ by magnetic stirring to obtain a PVDF solution; weighing 0.2g of hexagonal boron nitride nanosheet, and dissolving the hexagonal boron nitride nanosheet in a DMF solution through ultrasonic treatment to obtain a hexagonal boron nitride suspension; and mixing the PVDF solution and the hexagonal boron nitride suspension, and stirring by magnetic force at room temperature until the mixed solution is free from bubbles.
Preferably, the step S3 specifically includes: and placing the dried and cured hexagonal boron nitride/PVDF film in a decompression furnace to anneal for 6 hours at 180 ℃. In the preferred scheme, the annealing treatment can eliminate residual stress, stabilize the size of the film, reduce the deformation and crack tendency, and homogenize the structure and components of the material to improve the material performance.
Preferably, the pre-configuring step of the MXene/PVA mixed suspension comprises: weighing 0.1g of MXene powder, and dissolving in DI water to obtain MXene solution; 4g of PVA solution was added to the MXene solution to mix, and the mixed solution was subjected to ultrasonic treatment.
Compared with the prior art, the technical scheme of the invention has the beneficial effects that:
according to the flexible capacitive temperature sensor and the manufacturing method thereof, firstly, an MXene/PVA film is arranged in the middle of the flexible capacitive temperature sensor, interface polarization exists between the MXene with high conductivity and a polymer matrix with high insulativity, a high dielectric constant can be provided, and the dielectric constant is greatly changed along with the temperature change; the upper layer and the lower layer are hexagonal boron nitride/PVDF films, the hexagonal boron nitride can inhibit charges on the electrodes from being input into the medium, and the interlayer structure enables barrier effect to occur between the layers, so that the layers can obtain high breakdown strength and protect the device under the condition of high electric field. Therefore, the flexible capacitive temperature sensor has good flexibility, can detect the temperature change in a certain temperature range, and has higher dielectric constant, lower dielectric loss and higher breakdown strength.
Drawings
Fig. 1 is a schematic three-dimensional structure diagram of the capacitive temperature sensor according to embodiment 1.
Fig. 2 is a flowchart of a method for manufacturing the capacitive temperature sensor according to embodiment 2.
Fig. 3 is a process diagram of the capacitive sensor of example 2.
FIG. 4 shows the change of dielectric constant with temperature of the mixed solutions of PVA and MXene/PVA in example 2.
Detailed Description
The drawings are for illustrative purposes only and are not to be construed as limiting the patent;
for the purpose of better illustrating the embodiments, certain features of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product;
it will be understood by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted.
The technical solution of the present invention is further described below with reference to the accompanying drawings and examples.
Example 1
As shown in fig. 1, the flexible capacitive temperature sensor is a sandwich structure of hexagonal boron nitride/PVDF film layers, MXene/PVA film layers, and hexagonal boron nitride/PVDF film layers arranged in a row, and gold electrodes are respectively plated on the upper and lower outer surfaces of the sandwich structure to form the upper and lower electrodes of the flexible capacitive temperature sensor.
In the sandwich structure of the flexible capacitive temperature sensor, the middle layer is an MXene/PVA film, interface polarization exists between the MXene with high conductivity and the polymer matrix with high insulation, when the temperature exceeds 60 ℃, the dielectric constant is sharply increased, and the dielectric constant is remarkably increased due to the rapid increase of the PVA matrix. Meanwhile, MXene nanosheets are added into PVA, a high dielectric constant can be obtained due to the electroosmotic flow behavior among filling particles and the interfacial polarization effect between the conductive particle phase and the polymer phase, and due to the fact that a large amount of interfacial polarization is introduced, the dipole reversal between the two phases is enhanced when the temperature rises, and therefore the dielectric constant is increased faster than that when no MXene nanosheets are introduced. The upper layer and the lower layer in the sandwich structure are hexagonal boron nitride/PVDF films, on one hand, charge on an electrode can be prevented from being injected into a medium by the hexagonal boron nitride, and on the other hand, the interface barrier effect between the sandwich structure layers can be avoided, so that the device can obtain high breakdown strength and can work under high electric field intensity.
In addition, in the hexagonal boron nitride/PVDF thin film layer, the hexagonal boron nitride content is 8.0 wt%, and the hexagonal boron nitride content of 8.0 wt% can not only improve the breakdown strength of the capacitor, but also obtain a higher dielectric coefficient;
in the MXene/PVA film layer, the content of MXene is 2.5 wt%, and the content of MXene of 2.5 wt% is ideal, the dielectric constant of the capacitor is ideal, and the dielectric loss is lowest, so that the flexible capacitive temperature sensor has better performance.
The flexible capacitive temperature sensor of the embodiment has good flexibility, can detect the temperature change in a certain temperature range, and has high dielectric constant, low dielectric loss and high breakdown strength.
Example 2
The manufacturing method of the flexible capacitive temperature sensor, as shown in fig. 2 and 3, includes:
s1, putting a glass slide into absolute ethyl alcohol and DI water successively, performing ultrasonic cleaning for 20min respectively, and then putting the glass slide into a forced air drying oven to dry and keep the constant temperature at 70 ℃; so that the conditions of uneven shrinkage and bending of the device caused by overlarge temperature difference between the upper surface and the lower surface of the device in the drying process after the mixed solution is coated subsequently can not occur;
s2, uniformly and slowly coating the pre-configured hexagonal boron nitride/PVDF mixed solution on the glass slide obtained in the step S1, and drying at 70 ℃ in a drying box to obtain a hexagonal boron nitride/PVDF film with the hexagonal boron nitride content of 8.0 wt%;
s3, placing the dried and cured hexagonal boron nitride/PVDF film in a decompression furnace, and annealing for 6 hours at 180 ℃ to eliminate residual stress, stabilize the size and reduce deformation and crack tendency, and on the other hand, the material structure and components can be uniform, and the material performance can be improved;
s4, carrying out ultrasonic treatment on the pre-configured MXene/PVA mixed suspension to fully mix the suspension;
s5, coating the MXene/PVA mixed suspension on the hexagonal boron nitride/PVDF film obtained in the step S3, and drying at 40 ℃ to obtain an MXene/PVA film with the MXene content of 2.5 wt%;
s6, repeating the steps S2 and S3, coating the obtained hexagonal boron nitride/PVDF film on the structure formed in the step S5, and preparing sandwich structures of the ordered hexagonal boron nitride/PVDF film layer, the MXene/PVA film layer and the hexagonal boron nitride/PVDF film layer;
and S7, plating gold electrodes on the upper and lower outer surfaces of the sandwich structure by using a sputtering coating technology.
The pre-configuration step of the hexagonal boron nitride/PVDF mixed solution comprises the following steps: weighing 2.5g of PVDF powder, and completely dissolving the PVDF powder in a DMF solvent at 60 ℃ by magnetic stirring to obtain a PVDF solution; weighing 0.2g of hexagonal boron nitride nanosheet, and dissolving the hexagonal boron nitride nanosheet in a DMF solution through ultrasonic treatment to obtain a hexagonal boron nitride suspension; and mixing the PVDF solution and the hexagonal boron nitride suspension, and stirring by magnetic force at room temperature until the mixed solution is free from bubbles.
The pre-configuration step of the MXene/PVA mixed suspension comprises the following steps: weighing 0.1g of MXene powder, and dissolving in DI water to obtain MXene solution; 4g of PVA solution was added to the MXene solution to mix, and the mixed solution was subjected to ultrasonic treatment. As shown in fig. 4, which is a schematic diagram of the change of the dielectric constant of the mixed solution with temperature, it can be seen that when the temperature exceeds 60 ℃, the dielectric constant is sharply increased, thereby being suitable for detecting the change of the temperature.
The manufacturing method of the flexible capacitive temperature sensor is simple in manufacturing process and easy to operate, and the manufactured flexible capacitive temperature sensor is good in flexibility and can be freely bent; the temperature change is detected within a certain temperature range, and the thermal sensitivity is high; and can work normally under the high electric field environment, has higher dielectric constant.
The terms describing positional relationships in the drawings are for illustrative purposes only and are not to be construed as limiting the patent;
it should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
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| WO2019017045A1 (en) * | 2017-07-20 | 2019-01-24 | アルプス電気株式会社 | Temperature sensor |
| CN109671949A (en) * | 2018-12-12 | 2019-04-23 | 福建翔丰华新能源材料有限公司 | A kind of MXene base flexible compound negative electrode material and preparation method thereof |
| CN109764971A (en) * | 2019-01-14 | 2019-05-17 | 京东方科技集团股份有限公司 | Flexibility temperature sensor and preparation method thereof and flexible apparatus |
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| WO2019017045A1 (en) * | 2017-07-20 | 2019-01-24 | アルプス電気株式会社 | Temperature sensor |
| CN109671949A (en) * | 2018-12-12 | 2019-04-23 | 福建翔丰华新能源材料有限公司 | A kind of MXene base flexible compound negative electrode material and preparation method thereof |
| CN109764971A (en) * | 2019-01-14 | 2019-05-17 | 京东方科技集团股份有限公司 | Flexibility temperature sensor and preparation method thereof and flexible apparatus |
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| Room Temperature Gas Sensing of Two-Dimensional Titanium Carbide (MXene);Eunji Lee;《ACS Appl. Mater. Interfaces》;20170927;第37184-37190页 * |
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