CN111524837B - Device and method for monitoring running state of heating system of silicon epitaxial equipment - Google Patents
Device and method for monitoring running state of heating system of silicon epitaxial equipment Download PDFInfo
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- CN111524837B CN111524837B CN202010362091.9A CN202010362091A CN111524837B CN 111524837 B CN111524837 B CN 111524837B CN 202010362091 A CN202010362091 A CN 202010362091A CN 111524837 B CN111524837 B CN 111524837B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Programme-control systems
- G05B19/02—Programme-control systems electric
- G05B19/18—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form
- G05B19/414—Structure of the control system, e.g. common controller or multiprocessor systems, interface to servo, programmable interface controller
- G05B19/4147—Structure of the control system, e.g. common controller or multiprocessor systems, interface to servo, programmable interface controller characterised by using a programmable interface controller [PIC]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
- Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]
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Abstract
The invention discloses a monitoring device and a monitoring method for the running state of a heating system of silicon epitaxial equipment, wherein the monitoring device comprises the following components: the device comprises an epitaxial equipment machine table, a current transformer, a current signal collector, a control signal collector, a PLC device, an operation display device and an alarm indication device. The heating lamp tube of the epitaxial machine is driven by the silicon controlled rectifier, current signals at two ends of the lamp tube are collected by the current signal collection device and transmitted into the PLC, the current signals are compared with signals collected by the control signal collection device in an operation mode, if the current signals exceed a control threshold value, an alarm prompt is carried out, on-line monitoring on the sound condition of the heating lamp tube is achieved, the problem finding is timely alarmed, and the efficiency of epitaxial equipment is improved.
Description
Technical Field
The invention belongs to the technical field of industrial monitoring, and particularly relates to a monitoring device and a monitoring method for a heating device of single-chip silicon epitaxial equipment.
Background
At present, in the single-chip silicon epitaxial production of an ASM2000 machine, main components of temperature control include a temperature controller, a Thermocouple (TC), a silicon controlled rectifier and a heating lamp tube, and the stability of temperature has a direct relation to the quality of products. The temperature source is provided by 10 groups of heating lamps, the lamps are sealed in the reaction cavity of the machine, the good condition of the lamps cannot be directly observed through naked eyes, when the lamps are abnormal, the machine can deviate in temperature, the growth quality of an epitaxial layer is poor, and waste chips appear.
When the lamp tube cannot work normally, under the rated power supply voltage, abnormal deviation can occur to the current on the power supply bus, so that the current value on the heating lamp tube bus can reflect the running condition of the lamp tube. Although the machine is also provided with a monitoring system, the real-time monitoring cannot be performed because the control threshold value is set larger and the test is performed only in a fixed time. Therefore, it is necessary to develop a lamp operating condition monitoring device.
Disclosure of Invention
In order to solve the problems, the invention discloses a device for monitoring the running state of a heating system of silicon epitaxial equipment, which is used for monitoring the sound condition of a lamp tube when the heating system runs, ensuring that an alarm prompt can be given in time when a problem occurs, and preventing in advance and reducing economic loss.
The invention also provides a method for monitoring the running state of the heating system of the silicon epitaxial equipment, which is used for monitoring the sound condition of the lamp tube when the heating system runs, so as to ensure that the alarm prompt can be given in time when a problem occurs.
In order to achieve the purpose, the running state monitoring device of the heating system of the silicon epitaxial equipment adopts the following technical scheme:
the running state monitoring device of the heating system of the silicon epitaxial equipment comprises epitaxial machine equipment, a control signal acquisition device, a current transformer, a PLC device and an alarm device; the epitaxial machine equipment is provided with a temperature controller, a heating lamp tube and a silicon controlled rectifier, wherein the silicon controlled rectifier is used for outputting voltage to drive the heating lamp tube to work; the current transformer converts a current signal passing through the controllable silicon into a voltage signal, the PLC device collects a voltage signal value transmitted by the current transformer and converts the voltage signal value into a real-time current value at two ends of the heating lamp tube so as to monitor the current on the power supply bus of the heating lamp tube in real time, and if abnormality occurs, the PLC device sends an alarm signal;
the control signal acquisition device acquires an output signal of the temperature controller, wherein the output signal is a control signal of the silicon controlled rectifier; the control signal acquisition device transmits the acquired control signal to the PLC device; the PLC device is used for carrying out operation comparison on signals acquired by the current acquisition device and the control signal acquisition device and controlling the frequency and time for acquiring the current signals and the output signals.
The beneficial effects are that: the running state monitoring device of the silicon epitaxial equipment heating system provided by the invention monitors the current of the silicon controlled rectifier through the current transformer, monitors the running state of related parts of the heating device through calculation and analysis, realizes on-line monitoring of the sound condition of the heating lamp tube, timely alarms when finding problems, and improves the efficiency of epitaxial equipment.
Further, the system also comprises an SPC system, and the signal values collected by the PLC device are transmitted to the SPC system to realize tabular and graphical display and the statistical analysis of the derived data.
Further, the theoretical current signal value of the heating lamp tube is used as a comparison threshold value, the PLC device collects the voltage signal value transmitted by the current transformer and converts the voltage signal value into a real-time current value at two ends of the heating lamp tube to be compared with the comparison threshold value, and if the real-time current value is higher or lower than the comparison threshold value, the PLC device outputs an alarm signal to the alarm device.
The method for monitoring the running state of the heating system of the silicon epitaxial equipment provided by the invention can adopt the following technical scheme: providing epitaxial machine equipment, a control signal acquisition device, a current transformer, a PLC device and an alarm device; the epitaxial machine equipment is provided with a temperature controller, a heating lamp tube and a silicon controlled rectifier, and the output voltage of the silicon controlled rectifier drives the heating lamp tube to work; the current transformer converts a current signal passing through the controllable silicon into a voltage signal, the PLC device collects a voltage signal value transmitted by the current transformer and converts the voltage signal value into a real-time current value at two ends of the heating lamp tube so as to monitor the current on the power supply bus of the heating lamp tube in real time, and if abnormality occurs, the PLC device sends an alarm signal;
the control signal acquisition device acquires an output signal of the temperature controller, wherein the output signal is a control signal of the silicon controlled rectifier; the control signal acquisition device transmits the acquired control signal to the PLC device; the PLC device is used for carrying out operation comparison on signals acquired by the current acquisition device and the control signal acquisition device and controlling the frequency and time for acquiring the current signals and the output signals.
The beneficial effects are that: according to the method for monitoring the running state of the heating system of the silicon epitaxial equipment, the current of the silicon controlled rectifier is monitored through the current transformer, the running condition of relevant parts of the heating device is monitored through calculation and analysis, the on-line monitoring of the sound condition of the heating lamp tube is realized, the problem is found, the alarm is given in time, and the efficiency of the epitaxial equipment is improved.
Further, the theoretical current signal value of the heating lamp tube is used as a comparison threshold value, the PLC device collects the voltage signal value transmitted by the current transformer and converts the voltage signal value into a real-time current value at two ends of the heating lamp tube to be compared with the comparison threshold value, and if the real-time current value is higher or lower than the comparison threshold value, the PLC device outputs an alarm signal to the alarm device.
Further, the correspondence between the control signal of the thyristor and the output voltage is as follows:
U＝-4.8676x 2 +100.32x
wherein: u is the output voltage value;
x is the voltage value of the control signal;
according to the collected silicon controlled control signal, calculating to obtain the voltage signal value U actually loaded at two ends of heating device, and because the physical characteristic parameters of heating lamp tube are defined, the theoretical current signal value I of heating lamp tube is known Theory of And the current value I acquired by the current signal acquisition device Acquisition of And performing comparison operation to obtain the actual running condition of the heating lamp tube.
Drawings
Fig. 1 is a schematic structural view of a silicon epitaxial apparatus heating system operating state monitoring device.
Detailed Description
As shown in FIG. 1, the invention provides a device for monitoring the running state of a heating system of silicon epitaxial equipment, which comprises epitaxial machine equipment, a control signal acquisition device, a current transformer, a PLC device and an alarm device. The epitaxial machine equipment is provided with a temperature controller, a heating lamp tube, a silicon controlled rectifier, a Thermocouple (TC) and a reaction cavity; the heating lamp tube heats the reaction cavity in which the silicon chip is placed, and the silicon controlled rectifier is used for outputting voltage to drive the heating lamp tube to work.
The rated power of the heating lamp tube is 6kW, and the rated voltage is 480V. In actual operation, 17 heating lamps and 4 heating lamps are mounted on the machine, the temperature control field of the machine is divided into 4 areas, center, side, front, rear, the actual temperatures of the areas are detected by the TCs, and the total temperature is measured by the TCs. The heating lamp tubes are divided into 10 groups according to the temperature area, and the number of each group is different. The ten groups of lamp tubes are driven by 10 thyristors, and the heating lamp tubes are connected in parallel.
The input signals of the current transformer are as follows: 0-50A, the output voltage is 0- +5V. The current signal passing through the current transformer is converted into a voltage signal, the PLC device collects the voltage signal value transmitted by the current transformer and converts the voltage signal value into real-time current values at two ends of the heating lamp tube so as to monitor the current on the power supply bus of the heating lamp tube in real time, and if abnormality occurs, an alarm device sends an alarm signal.
The control signal acquisition device acquires an output signal of the temperature controller, wherein the output signal is a control signal of the silicon controlled rectifier; the control signal acquisition device transmits the acquired control signal to the PLC device. The PLC device is used for carrying out operation comparison on signals acquired by the current acquisition device and the control signal acquisition device and controlling the frequency and time for acquiring the current signals and the output signals.
The system also comprises an SPC system, the signal values collected by the PLC device are transmitted to the SPC system to realize tabular and graphical display, and statistical analysis of derived data is carried out, through monitoring the actual running state of the heating device, the theoretical current signal value of the heating lamp tube is used as a comparison threshold value, the voltage signal values collected by the PLC device and transmitted by the current transformer are converted into real-time current values at two ends of the heating lamp tube to be compared with the comparison threshold value, and if the real-time current values are higher than or lower than the comparison threshold value (generally set as +/-10 percent of the theoretical current signal), the PLC device outputs an alarm signal to the alarm device.
The operation monitoring steps of the monitoring device are as follows:
step one: and collecting the current at the output end of the silicon controlled rectifier by using a current transformer.
Step two: and the control signal acquisition device is used for acquiring a control signal output to the controllable silicon by the temperature controller into the PLC device.
Step three: the PLC device is utilized as the core of the system device, and comprises three functions: and (3) a control function. The sampling time and sampling frequency of the current signal acquisition device and the control voltage signal acquisition device are controlled, and the acquisition of signals under a preset program is realized; the current value of the heating lamp tube is acquired by using a current transformer, and the current is measured by using a current transformerThe mutual inductor can convert the current signal passing through the bus into a voltage signal of 0-5V, the PLC device collects the voltage signal value transmitted by the current transformer and converts the voltage signal value into a current value I at two ends of the lamp tube again through the operation function Acquisition of The method comprises the steps of carrying out a first treatment on the surface of the The collection of the control signal of the silicon controlled rectifier is obtained by collecting the control voltage of a control port of the silicon controlled rectifier, and the signal is controlled by a temperature controller to be a voltage signal of 0-5V; the corresponding relation between the control signal and the output voltage is obtained by measuring the silicon controlled rectifier controller used by the machine products as follows:
U＝-4.8676x 2 +100.32x
wherein: u is the output voltage value;
x is the voltage value of the control signal;
the operation function is used for carrying out operation according to the collected thyristor control signals to obtain the voltage signal value U actually loaded at the two ends of the heating device, and the theoretical current signal value I of the heating lamp tube is known because the physical characteristic parameters of the heating lamp tube are determined Theory of And the current value I acquired by the current signal acquisition device Acquisition of Performing contrast operation to obtain the actual running condition of the heating device; the signal statistical analysis function, which uses the signal value collected by the PLC device to transmit to the SPC system, can realize the table and graphic display, and the statistical analysis function of the data, and can pre-judge and analyze the heating state of the lamp tube in advance. By monitoring the actual operating state of the heating device, when an abnormality occurs in the heating device, for example, the collected current exceeds or falls below a threshold value (generally set to ±10% of the theoretical current signal), the PLC device will output an alarm signal to the alarm device.
Step four: and if the result calculated by the arithmetic unit exceeds the alarm setting limit value, carrying out audible and visual prompt by using the alarm device.
In silicon epitaxial production, the accuracy and stability requirements for temperature control are extremely high, and the monitoring of the machine parameters cannot be completely realized by the existing machine control parameters. This patent is through monitoring the busbar current, through calculation analysis, monitors the running situation of the relevant part of heating device, can realize in time warning prevention, reduces unnecessary economic loss, improves the reliability of production efficiency and equipment.
In addition, the invention may be embodied in many specific forms and should not be construed as limited to the embodiments set forth herein. It should be noted that modifications and adaptations to the present invention may occur to one skilled in the art without departing from the principles of the present invention and are intended to be comprehended within the scope of the present invention.
Claims (5)
1. The running state monitoring device of the heating system of the silicon epitaxial equipment is characterized by comprising epitaxial machine equipment, a control signal acquisition device, a current transformer, a PLC device and an alarm device; the epitaxial machine equipment is provided with a temperature controller, a heating lamp tube and a silicon controlled rectifier, wherein the silicon controlled rectifier is used for outputting voltage to drive the heating lamp tube to work; the current transformer converts a current signal passing through the controllable silicon into a voltage signal, the PLC device collects a voltage signal value transmitted by the current transformer and converts the voltage signal value into a real-time current value at two ends of the heating lamp tube so as to monitor the current on the power supply bus of the heating lamp tube in real time, and if abnormality occurs, the PLC device sends an alarm signal;
the control signal acquisition device acquires an output signal of the temperature controller, wherein the output signal is a control signal of the silicon controlled rectifier; the control signal acquisition device transmits the acquired control signal to the PLC device; the PLC device is used for carrying out operation comparison on the signals acquired by the current acquisition device and the control signal acquisition device and controlling the frequency and time for acquiring the current signals and the output signals;
the correspondence between the control signal and the output voltage of the thyristor is as follows:
U＝-4.8676x 2 +100.32x
wherein: u is the output voltage value;
x is the voltage value of the control signal;
according to the collected SCR control signal, calculating to obtain the voltage signal value U actually loaded at two ends of the heating lamp tube, and since the physical characteristic parameters of the heating lamp tube are determined, the theoretical current signal value I of the heating lamp tube is known Theory of And the current value I acquired by the current signal acquisition device Acquisition of And performing comparison operation to obtain the actual running condition of the heating lamp tube.
2. The silicon epitaxial apparatus heating system operating state monitoring device according to claim 1, further comprising an SPC system, wherein the signal values collected by the PLC device are transmitted to the SPC system to realize tabular and graphical display, and statistical analysis of the derived data.
3. The device for monitoring the operation state of a heating system of a silicon epitaxial apparatus according to claim 1 or 2, wherein the theoretical current signal value of the heating lamp tube is used as a comparison threshold value, the PLC device collects the voltage signal value transmitted by the current transformer and converts the voltage signal value into a real-time current value at two ends of the heating lamp tube to be compared with the comparison threshold value, and if the real-time current value is higher or lower than the comparison threshold value, the PLC device outputs an alarm signal to the alarm device.
4. The method is characterized by providing epitaxial machine equipment, a control signal acquisition device, a current transformer, a PLC device and an alarm device; the epitaxial machine equipment is provided with a temperature controller, a heating lamp tube and a silicon controlled rectifier, and the output voltage of the silicon controlled rectifier drives the heating lamp tube to work; the current transformer converts a current signal passing through the controllable silicon into a voltage signal, the PLC device collects a voltage signal value transmitted by the current transformer and converts the voltage signal value into a real-time current value at two ends of the heating lamp tube so as to monitor the current on the power supply bus of the heating lamp tube in real time, and if abnormality occurs, the PLC device sends an alarm signal;
the control signal acquisition device acquires an output signal of the temperature controller, wherein the output signal is a control signal of the silicon controlled rectifier; the control signal acquisition device transmits the acquired control signal to the PLC device; the PLC device is used for carrying out operation comparison on the signals acquired by the current acquisition device and the control signal acquisition device and controlling the frequency and time for acquiring the current signals and the output signals;
the correspondence between the control signal and the output voltage of the thyristor is as follows:
U＝-4.8676x 2 +100.32x
wherein: u is the output voltage value;
x is the voltage value of the control signal;
according to the collected SCR control signal, calculating to obtain the voltage signal value U actually loaded at two ends of the heating lamp tube, and since the physical characteristic parameters of the heating lamp tube are determined, the theoretical current signal value I of the heating lamp tube is known Theory of And the current value I acquired by the current signal acquisition device Acquisition of And performing comparison operation to obtain the actual running condition of the heating lamp tube.
5. The method for monitoring the operation state of a heating system of a silicon epitaxial apparatus according to claim 4, wherein the theoretical current signal value of the heating tube is used as a comparison threshold value, the PLC device collects the voltage signal value transmitted by the current transformer and converts the voltage signal value into a real-time current value at two ends of the heating tube to be compared with the comparison threshold value, and if the real-time current value is higher or lower than the comparison threshold value, the PLC device outputs an alarm signal to the alarm device.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102135782A (en) * | 2011-02-16 | 2011-07-27 | 北京七星华创电子股份有限公司 | Electrical control system and vertical furnace heating device containing same |
| CN102323775A (en) * | 2011-05-31 | 2012-01-18 | 北京七星华创电子股份有限公司 | Circuit signal monitoring device and method |
| CN105509211A (en) * | 2016-01-22 | 2016-04-20 | 珠海格力电器股份有限公司 | Infrared humidifier |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102135782A (en) * | 2011-02-16 | 2011-07-27 | 北京七星华创电子股份有限公司 | Electrical control system and vertical furnace heating device containing same |
| CN102323775A (en) * | 2011-05-31 | 2012-01-18 | 北京七星华创电子股份有限公司 | Circuit signal monitoring device and method |
| CN105509211A (en) * | 2016-01-22 | 2016-04-20 | 珠海格力电器股份有限公司 | Infrared humidifier |
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