CN113113329A - Epitaxial equipment monitoring method and corresponding epitaxial equipment monitoring device - Google Patents
Epitaxial equipment monitoring method and corresponding epitaxial equipment monitoring device Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 110
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- 238000005530 etching Methods 0.000 claims description 48
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- 238000012423 maintenance Methods 0.000 abstract description 10
- 238000010586 diagram Methods 0.000 description 15
- 230000008859 change Effects 0.000 description 14
- 238000005229 chemical vapour deposition Methods 0.000 description 14
- 238000004590 computer program Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 7
- 230000006641 stabilisation Effects 0.000 description 6
- 238000011105 stabilization Methods 0.000 description 6
- 229910052736 halogen Inorganic materials 0.000 description 5
- 150000002367 halogens Chemical class 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 238000000407 epitaxy Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
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- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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Abstract
The embodiment of the invention provides a method and a device for monitoring epitaxial equipment, wherein the method comprises the following steps: determining the current working state of the epitaxial equipment; if the current working state is a preset working state, acquiring actual power information of the heating element in the current working state; and judging whether the reflecting screen is damaged or not according to the actual power information. According to the embodiment of the invention, the actual power information of the epitaxial equipment during the wafer processing process is monitored, and whether the reflecting screen is damaged or not is judged according to the actual power information, so that the negative influence on other parts in the epitaxial equipment caused by the fact that the wafer processing is continuously carried out under the condition that the reflecting screen is damaged can be effectively avoided, the service lives of the other parts are protected, and the maintenance cost of the epitaxial equipment is further reduced.
Description
Technical Field
The present invention relates to the field of semiconductor technology, and in particular, to a method and an apparatus for monitoring an epitaxial device.
Background
Chemical Vapor Deposition (CVD) refers to a method of synthesizing a coating or a nano material by reacting Chemical gas or Vapor on the surface of a substrate, and is a thin film Deposition technique in which gaseous reactants are chemically reacted to generate a solid substance and the solid substance is deposited on the surface of a wafer by heating at a high temperature in a process chamber.
The heating system plays an extremely important role in the CVD equipment, the existing CVD equipment adopts an infrared heating mode, the heating system mainly comprises an infrared halogen lamp and a gold-plated reflecting screen, the infrared rays emitted by the infrared halogen lamp irradiate on the graphite tray through the reflecting effect of the gold-plated reflecting screen, the tray is heated and an even temperature field is formed, and therefore the wafer on the tray is uniformly heated to generate an epitaxial layer with even resistivity. However, the gold-plated reflecting screen may have a phenomenon of surface gold layer falling off or surface blacking during use, which may cause the reflecting performance of the reflecting screen to be deteriorated, and if the CVD process is continued under such a condition, the total power of the heating lamp tube required for completing the same process may be increased, thereby affecting the service life of the heating lamp tube and other components and increasing the maintenance cost of the machine.
Disclosure of Invention
In view of the above problems, embodiments of the present invention are proposed to provide an epitaxial device monitoring method and a corresponding epitaxial device monitoring apparatus that overcome or at least partially solve the above problems.
In order to solve the above problem, an embodiment of the present invention discloses a method for monitoring an epitaxial apparatus, where the epitaxial apparatus includes a reflective screen and a heating element, and the method includes:
determining the current working state of the epitaxial equipment;
if the current working state is a preset working state, acquiring actual power information of the heating element in the current working state;
and judging whether the reflecting screen is damaged or not according to the actual power information.
Optionally, the preset operating state includes an epitaxial state and an etching state, and if the current operating state is the preset operating state, acquiring actual power information of the heating element in the current operating state includes:
if the current working state is the extension state, acquiring the actual power information of the heating element in the extension state;
or the like, or, alternatively,
and if the current working state is the etching state, acquiring the actual power information of the heating element in the etching state.
Optionally, the acquiring actual power information of the heating element in the current operating state includes:
recording the power value of the heating element in the current working state, and recording the changed power value after the power value of the heating element is changed every time;
and if the epitaxial equipment finishes the current working state, determining the actual power information of the heating element in the current working state according to all the recorded power values.
Optionally, the determining whether the reflective screen is damaged according to the actual power information includes:
acquiring preset power information corresponding to the current working state;
comparing the actual power information with the preset power information to determine power difference information; and judging whether the reflecting screen is damaged or not according to the power difference information.
Optionally, the determining the actual power information of the heating element in the current operating state according to all the recorded power values includes:
calculating an average power value of all the recorded power values, and taking the average power value as the actual power information of the heating element in the current operating state.
Optionally, the determining the power difference information by comparing the actual power information with the preset power information includes:
and comparing the average power value with the preset power threshold value to determine the power difference value.
Optionally, the method further comprises:
and if the reflecting screen is judged to be damaged, controlling the epitaxial equipment to send alarm information so as to remind a user to maintain the reflecting screen.
The embodiment of the invention also discloses a monitoring device of the epitaxial equipment, the epitaxial equipment comprises a reflecting screen and a heating element, and the device comprises:
the determining module is used for determining the current working state of the epitaxial equipment;
the actual power information acquisition module is used for acquiring actual power information of the heating element in the current working state if the current working state is a preset working state;
and the judging module is used for judging whether the reflecting screen is damaged or not according to the actual power information.
Optionally, the preset operating state includes an epitaxial state and an etching state, and the actual power information obtaining module includes:
an actual power information obtaining submodule, configured to obtain the actual power information of the heating element in the epitaxial state if the current operating state is the epitaxial state; or, if the current working state is the etching state, acquiring the actual power information of the heating element in the etching state.
Optionally, the actual power information obtaining module includes:
the recording submodule is used for recording the power value of the heating element in the current working state and recording the changed power value after the power value of the heating element is changed every time;
and the determining submodule is used for determining the actual power information of the heating element in the current working state according to all the recorded power values if the epitaxial equipment finishes the current working state.
Optionally, the determining module includes:
the preset power information acquisition submodule is used for acquiring preset power information corresponding to the current working state;
the comparison submodule is used for comparing the actual power information with the preset power information and determining power difference information;
and the judging submodule is used for judging whether the reflecting screen is damaged or not according to the power difference information.
Optionally, the determining sub-module includes:
a calculating unit, configured to calculate an average power value of all the recorded power values, and use the average power value as the actual power information of the heating element in the current operating state.
Optionally, the preset power information is a preset power threshold, and the comparing sub-module includes:
and the comparison unit is used for comparing the average power value with the preset power threshold value and determining the power difference value.
Optionally, the apparatus further comprises:
and the alarm module is used for controlling the epitaxial equipment to send alarm information if the reflection screen is judged to be damaged so as to remind a user of maintaining the reflection screen.
The embodiment of the invention has the following advantages:
in the embodiment of the invention, when the wafer is subjected to corresponding process treatment in the epitaxial equipment, the current working state of the epitaxial equipment can be determined, if the current working state is the preset working state, the actual power information of the heating element in the epitaxial equipment in the state is acquired, and whether the reflecting screen in the epitaxial equipment is damaged or not is judged according to the actual power information. By adopting the method, the actual power information of the epitaxial equipment during the wafer processing process is monitored, whether the reflecting screen is damaged or not is judged according to the actual power information, negative effects on other parts in the epitaxial equipment caused by the fact that the wafer processing is continuously carried out under the condition that the reflecting screen is damaged can be effectively avoided, the service lives of the other parts are protected, and the maintenance cost of the epitaxial equipment is further reduced.
Drawings
FIG. 1 is a schematic view of a gold-plated reflecting screen of a single-piece CVD apparatus;
fig. 2 is a flowchart illustrating steps of a method for monitoring an epitaxial device according to an embodiment of the present invention;
FIG. 3 is a flow chart illustrating steps of another method for monitoring an epitaxial device in accordance with an embodiment of the present invention;
FIG. 4 is a graph of power versus time for a reflector shield heating a lamp tube in an epitaxial phase under normal and damaged conditions;
FIG. 5 is a graph of power versus time for a reflector shield heating a lamp tube during an etch phase under normal and damaged conditions;
fig. 6 is a flowchart of an epitaxial device monitoring method according to an embodiment of the present invention;
fig. 7 is a block diagram of an epitaxial device monitoring apparatus according to an embodiment of the present invention;
fig. 8 is a block diagram of another monitoring apparatus for an epitaxial device according to an embodiment of the present invention;
fig. 9 is a block diagram of a further monitoring apparatus for an epitaxial device according to an embodiment of the present invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below, and it is apparent that the described embodiments are only a part of the embodiments of the present invention, not all of them. All other embodiments that can be derived by one of ordinary skill in the art from the embodiments given herein are intended to be within the scope of the present invention.
Chemical vapor deposition is the main technique used to prepare high purity, high performance solid films. In a typical CVD process, one or more vapor source atoms or molecules are introduced into the chamber and chemically react under external energy to form the desired thin film on the substrate surface.
Referring to fig. 1, a schematic structural diagram of a gold-plated reflecting screen of a single piece CVD equipment is shown, the single piece CVD equipment is divided into an upper heating module and a lower heating module, the upper heating module comprises an upper uniform reflecting screen, an upper heating lamp tube and an upper central reflecting screen; the lower heating module comprises a lower central reflecting screen, a lower heating lamp tube and a lower uniform reflecting screen. In one case, the heating lamp tube is an infrared halogen lamp tube, and the working principle of the device is that direct light emitted by the infrared halogen lamp tube and reflected light reflected by a fixedly installed annular gold-plated reflecting screen irradiate on a silicon substrate positioned on a graphite base to realize heating of the silicon substrate.
In practical application, the gold-plated reflecting screen has the phenomenon that a gold layer on the surface falls off or the surface is blackened after being used for a period of time, so that the reflecting performance of the reflecting screen is deteriorated, and if the wafer process treatment is continued under the condition, the total power of the heating lamp tube required by the same process is increased, so that the service life of the heating lamp tube is influenced, and certain negative effects are also caused on other parts of the equipment chamber.
The existing method for monitoring the use state of the gold-plated reflecting screen is to manually check the state of the reflecting screen periodically, if the gold-plated reflecting screen is damaged, the gold-plated reflecting screen is replaced, and if the gold-plated reflecting screen is not damaged, the gold-plated reflecting screen is continuously used. The use condition of the gold-plated reflecting screen is detected by regular maintenance, whether the gold-plated reflecting screen is damaged or not can not be found in time, if the gold-plated reflecting screen is damaged in use and does not reach the maintenance period of a machine table, the gold-plated reflecting screen can be continuously used, the reflecting performance of the reflecting screen is deteriorated, the heating lamp tube can reach the temperature required by the process by increasing the total power, the service life of the heating lamp tube and other parts of the surrounding chamber can be influenced by the increase of the power, and the maintenance cost of the machine table is greatly increased.
Based on this, the present invention intends to provide an epitaxial device monitoring method and a corresponding epitaxial device monitoring apparatus that overcome or at least partially solve the above problems.
One of the core concepts of the embodiments of the present invention is that when a wafer is subjected to corresponding process processing in an epitaxial device, a current working state of the epitaxial device may be determined, and if the current working state is a preset working state, actual power information of a heating element in the epitaxial device in the state is acquired, and whether a reflective screen in the epitaxial device is damaged is determined according to the actual power information. By adopting the method, the actual power information of the epitaxial equipment during the wafer processing process is monitored, whether the reflecting screen is damaged or not is judged according to the actual power information, negative effects on other parts in the epitaxial equipment caused by the fact that the wafer processing is continuously carried out under the condition that the reflecting screen is damaged can be effectively avoided, the service lives of the other parts are protected, and the maintenance cost of the epitaxial equipment is further reduced.
Referring to fig. 2, a flowchart illustrating steps of a method for monitoring an epitaxial device according to an embodiment of the present invention is shown, where the epitaxial device includes a reflective screen and a heating element, and the method specifically includes the following steps:
The current operating state of the epitaxial apparatus may be determined when the wafer is being processed at the epitaxial apparatus. In the embodiment of the present invention, the epitaxial apparatus refers to a reaction apparatus for performing a chemical vapor deposition process, that is, the epitaxial apparatus may be a CVD apparatus. The CVD equipment can carry out an epitaxial or etching process on the wafer, and when the wafer is subjected to the epitaxial process treatment, the CVD equipment can be generally divided into three working stages, namely a process chamber heating stage, an epitaxial stage and a process chamber cooling stage; in addition, when the wafer is processed by the etching process, the process can be divided into three working stages, i.e., a process chamber temperature-raising stage, an etching stage, and a process chamber temperature-lowering stage. In practical applications, during the temperature raising and lowering phases of the process chamber, the power of the heating element in the epitaxial apparatus is in a fast change in order to control the temperature of the chamber to rise or fall, while during the epitaxial phase or the etching phase, the temperature in the process chamber tends to be stable, and the power of the heating element also tends to be stable. Therefore, the current working state of the epitaxial equipment is determined, and can be determined according to the temperature information of the process chamber of the epitaxial equipment. In addition, the operating state of the epitaxial device may also be determined in other manners, which is not limited in the embodiments of the present invention.
In one case, the heating element is a heating lamp tube, which is an infrared halogen lamp tube; the reflecting screen is a gold-plated reflecting screen.
In an actual process, the power of the heating element may vary according to the change of the reflection performance of the reflection screen. When the reflecting screen is damaged, the reflecting performance is deteriorated, and the heating element needs to increase the heating power in order to reach the target temperature required by the process during the process. In the embodiment of the invention, the normal power information of the heating element of the epitaxial device measured in the preset working state when the reflecting screen is normal can be stored in advance, and when the current working state is determined to be the preset working state, the actual power information of the heating element in the current working state is obtained.
In the embodiment of the invention, whether the reflecting screen is damaged or not can be judged according to the actual power information in the current working state. In one case, the actual power information may be compared to the normal power information to determine the damage to the reflective screen.
In summary, in the embodiment of the present invention, when the wafer is subjected to the corresponding process in the epitaxial apparatus, the current working state of the epitaxial apparatus may be determined, and if the current working state is the preset working state, the actual power information of the heating element in the epitaxial apparatus in the current working state is obtained, and whether the reflective screen in the epitaxial apparatus is damaged is determined according to the actual power information. By adopting the method, the actual power information of the epitaxial equipment during the wafer processing process is monitored, whether the reflecting screen is damaged or not is judged according to the actual power information, negative effects on other parts in the epitaxial equipment caused by the fact that the wafer processing is continuously carried out under the condition that the reflecting screen is damaged can be effectively avoided, the service lives of the other parts are protected, and the maintenance cost of the epitaxial equipment is further reduced.
Referring to fig. 3, a flow chart of steps of another monitoring method for an epitaxial device according to an embodiment of the present invention is shown, where the epitaxial device includes a reflective screen and a heating element, and specifically includes the following steps:
Wherein the preset working state includes an epitaxial state and an etching state, and for step 302, the following steps may be performed:
a substep S11, obtaining the actual power information of the heating element in the extension state if the current working state is the extension state; or, if the current working state is the etching state, acquiring the actual power information of the heating element in the etching state.
In the embodiment of the invention, when the epitaxial device is in an epitaxial state, the heating element in the epitaxial device is correspondingly in an epitaxial stage so as to carry out epitaxial treatment on the wafer in the epitaxial device; when the epitaxial apparatus is in the etching state, the heating element in the epitaxial apparatus is correspondingly in the etching stage to perform the etching process on the wafer in the epitaxial apparatus. Wherein, the heating element can be a heating lamp tube.
When the reflective screen is damaged, an abnormal increase in the power of the heating element in the epitaxial apparatus occurs. Referring to FIG. 4, a power-time graph of the lamp tube heating by the reflective screen in the epitaxial stage under normal and damaged conditions is shown; referring to fig. 5, a power-time graph of the reflector shield heating the lamp tube during the etching phase under normal and damaged conditions is shown. An Epi stage (epitoxy, namely an epitaxial stage) and an Etch stage (namely an etching stage) belong to a process stabilization stage, the temperature in a process chamber tends to be stable in the process stabilization stage, the power of a heating lamp tube also tends to be stable, and whether the reflecting screen is damaged or not can be accurately judged by monitoring the power change data in the process stabilization stage. While during the warm-up or cool-down phase of the process chamber the power of the heating element is in rapid variation, it is not meaningful to monitor the power of these two phases. It can be seen from the figure that the overall level of the power data of the heating lamp tube when the reflecting screen is normal is less than that when the reflecting screen is abnormal, so that the purpose of monitoring the state of the reflecting screen can be achieved by comparing the actual power with the normal power. Because the process temperature in the etching stage is higher than that in the epitaxial stage, the power of the heating lamp tube in the etching stage is higher than that in the epitaxial stage.
In the embodiment of the invention, the preset working state comprises an epitaxial state and an etching state, the epitaxial state corresponds to a process epitaxial stage, the etching state corresponds to a process etching stage, and the purpose of judging whether the emission screen is damaged or not can be achieved by monitoring the power information of the heating element in the epitaxial state or the etching state. Specifically, when the current working state of the epitaxial device is determined to be the epitaxial state, the actual power information of the heating element in the epitaxial state is acquired; when the current working state of the epitaxial device is determined to be the etching state, the actual power information of the heating element in the etching state is acquired.
Further, for step 302, the step of obtaining actual power information may include:
and a substep S21 of recording the power value of the heating element in the current operating state, and recording the changed power value after each time the power value of the heating element is changed.
When the process is determined to enter the Epi stage or the etching stage, the power data can be collected in real time, the initial power value of the heating element entering the Epi stage or the etching stage is recorded, and the changed power value is recorded after the power value of the heating element is changed. In the Epi stage or the etching stage, power data is collected after each change of the power value of the heating element, where the change may be a numerical change of the power of the heating element, in one example, a preset power change threshold may be set, and if the change of the power value of the current heating element relative to the last recorded power value is greater than the preset power change threshold, the current power value of the heating element is recorded.
In practical application, the data acquisition process may be implemented by software, the software may monitor a power change condition of the heating element during the process when the wafer enters the epitaxial device for the process, when it is determined that the wafer enters the Epi stage or the etching stage, start data acquisition, that is, determine an initial power value of the heating element when the wafer enters the Epi stage or the etching stage, record a changed power value when the power value of the heating element is changed, and when the wafer is changed again, that is, continuously record the changed power value, for example, when the power value is changed from 45 to 46, acquire power data of 46. In one case, a power change threshold may be set, and the secondary power change data is recorded when the power change value is greater than the power change threshold.
A substep S22, determining the actual power information of the heating element in the current operating state according to all the recorded power values if the epitaxial apparatus ends the current operating state.
And when the epitaxial equipment finishes the current working state, stopping collecting the power data, and determining the actual power information of the heating element in the working state according to all the recorded power values. In one case, the recorded power values may be summed; in another case, the recorded power values may be averaged.
For sub-step S22, the step of determining the actual power information from all power values recorded may comprise:
calculating an average power value of all the recorded power values, and taking the average power value as the actual power information of the heating element in the current operating state.
In the embodiment of the present invention, an average power value of the plurality of recorded power values may be calculated and used as the actual power information in the operating state. The purpose of monitoring the damage condition of the reflecting screen is achieved by calculating the average power value, the power incidental value can be filtered by the average power value, the monitoring reliability is improved, and the misjudgment of the damage condition of the reflecting screen is avoided.
Different working states correspond to different preset power information, and if the current working state is an extension state, the preset power information corresponding to the extension state is obtained; and if the current working state is the etching state, acquiring preset power information corresponding to the etching state. The preset power information is used for comparing with the actual power information, so that the damage condition of the reflecting screen is determined. In one case, the preset power information may be normal power information measured in a normal condition of the reflective screen; in another case, the preset power information may also be abnormal power information measured in case of damage to the reflective screen.
And 304, comparing the actual power information with the preset power information to determine power difference information.
And determining difference information between the actual power information and the preset power information.
In a case where the preset power information is a preset power threshold, for step 304, the following steps may be performed:
and a substep S31, comparing the average power value with the preset power threshold value, and determining the power difference value.
In the embodiment of the invention, the preset power threshold is set according to the power data of the heating element when the reflecting screen is damaged.
And 305, judging whether the reflecting screen is damaged or not according to the power difference information.
Judging the damage condition of the reflecting screen according to the power difference information, in one condition, comparing the average power value with a preset power threshold value, and judging that the reflecting screen is damaged when the average power value is greater than the preset power threshold value; and when the average power value is not greater than the preset power threshold value, judging that the reflecting screen is not damaged.
And 306, if the reflecting screen is judged to be damaged, controlling the extension equipment to send alarm information so as to remind a user to maintain the reflecting screen.
When the damage of the reflecting screen is determined, the epitaxial equipment is controlled to throw alarm information, a user is reminded to open the process cavity to check the condition of the reflecting screen, so that the reflecting screen can be maintained or replaced, and further, the epitaxial equipment can be stopped from carrying out the next process.
In order to enable those skilled in the art to better understand steps 301 to 306 of the embodiment of the present invention, the following description is given by way of an example:
referring to fig. 6, a flowchart of an epitaxial device monitoring method according to an embodiment of the present invention is shown, where the flowchart may include:
1. the epitaxial equipment starts to carry out a wafer processing technology;
2. judging whether the current process treatment stage is an extension stage or an etching stage, and starting to acquire power data of a heating element in the extension equipment if the current process treatment stage is determined to be the extension stage or the etching stage;
3. acquiring power data of the heating element, specifically, acquiring an initial power value of the heating element when the heating element enters an epitaxial stage or an etching stage, acquiring a power value when the power value of the heating element changes once, and summing all the acquired power values;
4. if the current process stage is finished, calculating the average power value of the N acquired power values to obtain an actual average power value;
5. acquiring a preset power alarm value corresponding to the current process stage, and judging whether the actual average power value obtained by calculation is greater than the preset power alarm value;
6. if the actual average power value is larger than the preset power alarm value, determining that the reflecting screen is damaged, controlling the epitaxial equipment to throw out an alarm, reminding a user to check the reflecting screen, and stopping the epitaxial equipment from carrying out the next furnace process; and if the actual average power value is not greater than the preset power alarm value, determining that the reflecting screen is not damaged, and continuing the next furnace wafer processing process by the epitaxial equipment.
In summary, in the embodiment of the present invention, when the wafer is subjected to the corresponding process in the epitaxial apparatus, the current working state of the epitaxial apparatus may be determined, and if the current working state is the preset working state, the actual power information of the heating element in the epitaxial apparatus in the current working state is obtained, and whether the reflective screen in the epitaxial apparatus is damaged is determined according to the actual power information. By adopting the method, the actual power information of the epitaxial equipment during the wafer processing process is monitored, whether the reflecting screen is damaged or not is judged according to the actual power information, the reflecting screen is maintained or replaced in time when the damage of the reflecting screen is monitored, the negative influence on other parts in the epitaxial equipment caused by the fact that the wafer processing is continuously carried out under the condition that the reflecting screen is damaged can be effectively avoided, the service lives of the other parts are protected, and the maintenance cost of the epitaxial equipment is further reduced. In addition, the purpose of monitoring the damage condition of the reflecting screen is achieved by monitoring whether the average power value of the heating element is abnormally increased in the process stabilization stage, the power incidental value can be filtered by the average power value, and the monitoring reliability is improved.
The average power value is calculated when the epitaxial equipment finishes the current working state, so that the power value which is occasionally larger can be effectively filtered. For example, in the beginning of the epitaxy stage or the etching stage, a situation of a large power may occur (the time of the process temperature rise stage is too short, the temperature is not raised to the target temperature during epitaxy or etching, and the power of the heating element is large at this time), if only the power data in a certain period of time of the epitaxy or etching stage is selected to calculate the average value, and the power data in the complete process stabilization stage is not adopted to calculate the average value, when two large power values are collected in the process starting stage and the selected time period includes the two occasional large power values, the calculated average power value may exceed the set alarm value, but at this time, the reflective screen is in a normal state, and an alarm may be caused by misthrowing. Therefore, calculating the average power value when the epitaxy or etch phase is over effectively filters the occasional large power values.
It should be noted that, for simplicity of description, the method embodiments are described as a series of acts or combination of acts, but those skilled in the art will recognize that the present invention is not limited by the illustrated order of acts, as some steps may occur in other orders or concurrently in accordance with the embodiments of the present invention. Further, those skilled in the art will appreciate that the embodiments described in the specification are presently preferred and that no particular act is required to implement the invention.
Referring to fig. 7, a block diagram of a monitoring apparatus for an epitaxial device according to an embodiment of the present invention is shown, where the epitaxial device includes a reflective screen and a heating element, and may specifically include the following modules:
a determining module 701, configured to determine a current working state of the epitaxial device;
an actual power information obtaining module 702, configured to obtain actual power information of the heating element in the current working state if the current working state is a preset working state;
and a judging module 703, configured to judge whether the reflective screen is damaged according to the actual power information.
Referring to fig. 8, a block diagram of an alternative embodiment of the monitoring device for epitaxial equipment according to the present invention is shown.
In an optional embodiment of the present invention, the preset operating state includes an epitaxial state and an etching state, and the actual power information obtaining module 702 may include:
an actual power information obtaining sub-module 7021, configured to obtain, if the current working state is the epitaxial state, the actual power information of the heating element in the epitaxial state; or, if the current working state is the etching state, acquiring the actual power information of the heating element in the etching state.
Referring to fig. 9, a block diagram of an alternative embodiment of the monitoring apparatus for epitaxial device of the present invention is shown.
In an alternative embodiment of the present invention, the actual power information obtaining module 702 may include:
a recording sub-module 7022, configured to record the power value of the heating element in the current operating state, and record a changed power value after the power value of the heating element is changed every time;
a determining sub-module 7023, configured to determine, according to all the recorded power values, the actual power information of the heating element in the current operating state if the epitaxial apparatus ends the current operating state.
In an optional embodiment of the present invention, the determining module 703 may include:
a preset power information obtaining sub-module 7031, configured to obtain preset power information corresponding to the current operating state;
a comparison submodule 7032, configured to compare the actual power information with the preset power information, and determine power difference information;
and the judging submodule 7033 is configured to judge whether the reflective screen is damaged according to the power difference information.
In an optional embodiment of the present invention, the determining sub-module may include:
a calculating unit, configured to calculate an average power value of all the recorded power values, and use the average power value as the actual power information of the heating element in the current operating state.
In an optional embodiment of the present invention, the preset power information is a preset power threshold, and the comparing sub-module may include:
and the comparison unit is used for comparing the average power value with the preset power threshold value and determining the power difference value.
In an optional embodiment of the present invention, the apparatus may further comprise:
and the alarm module is used for controlling the epitaxial equipment to send alarm information if the reflection screen is judged to be damaged so as to remind a user of maintaining the reflection screen.
In summary, in the embodiment of the present invention, when the wafer is subjected to the corresponding process in the epitaxial apparatus, the current working state of the epitaxial apparatus may be determined, and if the current working state is the preset working state, the actual power information of the heating element in the epitaxial apparatus in the current working state is obtained, and whether the reflective screen in the epitaxial apparatus is damaged is determined according to the actual power information. By adopting the method, the actual power information of the epitaxial equipment during the wafer processing process is monitored, whether the reflecting screen is damaged or not is judged according to the actual power information, the reflecting screen is maintained or replaced in time when the damage of the reflecting screen is monitored, the negative influence on other parts in the epitaxial equipment caused by the fact that the wafer processing is continuously carried out under the condition that the reflecting screen is damaged can be effectively avoided, the service lives of the other parts are protected, and the maintenance cost of the epitaxial equipment is further reduced. In addition, the purpose of monitoring the damage condition of the reflecting screen is achieved by monitoring whether the average power value of the heating element is abnormally increased in the process stabilization stage, the power incidental value can be filtered by the average power value, and the monitoring reliability is improved.
For the device embodiment, since it is basically similar to the method embodiment, the description is simple, and for the relevant points, refer to the partial description of the method embodiment.
An embodiment of the present invention further provides an electronic device, including: the computer program is executed by the processor to implement each process of the above embodiment of the method for monitoring the epitaxial device, and can achieve the same technical effect, and is not described herein again to avoid repetition.
The embodiment of the present invention further provides a computer-readable storage medium, where a computer program is stored on the computer-readable storage medium, and when the computer program is executed by a processor, the computer program implements each process of the above-mentioned embodiment of the method for monitoring an extension device, and can achieve the same technical effect, and in order to avoid repetition, the detailed description is omitted here.
For the device embodiment, since it is basically similar to the method embodiment, the description is simple, and for the relevant points, refer to the partial description of the method embodiment.
The embodiments in the present specification are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
As will be appreciated by one skilled in the art, embodiments of the present invention may be provided as a method, apparatus, or computer program product. Accordingly, embodiments of the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, embodiments of the present invention may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
Embodiments of the present invention are described with reference to flowchart illustrations and/or block diagrams of methods, terminal devices (systems), and computer program products according to embodiments of the invention. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing terminal to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing terminal, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing terminal to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing terminal to cause a series of operational steps to be performed on the computer or other programmable terminal to produce a computer implemented process such that the instructions which execute on the computer or other programmable terminal provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
While preferred embodiments of the present invention have been described, additional variations and modifications of these embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the embodiments of the invention.
Finally, it should also be noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. The term "comprising" is used to specify the presence of stated elements, but not necessarily the presence of stated elements, unless otherwise specified.
The foregoing describes in detail an epitaxial device monitoring method and an epitaxial device monitoring apparatus provided by the present invention, and specific examples are applied herein to illustrate the principles and embodiments of the present invention, and the description of the foregoing examples is only used to help understand the method and the core ideas of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (11)
1. A method of monitoring an epitaxial apparatus, the epitaxial apparatus comprising a reflective screen and a heating element, the method comprising:
determining the current working state of the epitaxial equipment;
if the current working state is a preset working state, acquiring actual power information of the heating element in the current working state;
and judging whether the reflecting screen is damaged or not according to the actual power information.
2. The method of claim 1, wherein the preset operating state comprises an epitaxial state and an etching state, and the obtaining the actual power information of the heating element in the current operating state if the current operating state is the preset operating state comprises:
if the current working state is the extension state, acquiring the actual power information of the heating element in the extension state;
or the like, or, alternatively,
and if the current working state is the etching state, acquiring the actual power information of the heating element in the etching state.
3. The method of claim 1, wherein said obtaining actual power information of said heating element in said current operating state comprises:
recording the power value of the heating element in the current working state, and recording the changed power value after the power value of the heating element is changed every time;
and if the epitaxial equipment finishes the current working state, determining the actual power information of the heating element in the current working state according to all the recorded power values.
4. The method of claim 3, wherein said determining whether the reflective screen is damaged according to the actual power information comprises:
acquiring preset power information corresponding to the current working state;
comparing the actual power information with the preset power information to determine power difference information;
and judging whether the reflecting screen is damaged or not according to the power difference information.
5. Method according to claim 4, wherein said determining of said actual power information of said heating element in said current operating state from all power values recorded comprises:
calculating an average power value of all the recorded power values, and taking the average power value as the actual power information of the heating element in the current operating state.
6. The method of claim 5, wherein the predetermined power information is a predetermined power threshold, and the comparing the actual power information with the predetermined power information to determine power difference information comprises:
and comparing the average power value with the preset power threshold value to determine the power difference value.
7. The method of claim 1, further comprising:
and if the reflecting screen is judged to be damaged, controlling the epitaxial equipment to send alarm information so as to remind a user to maintain the reflecting screen.
8. An epitaxial device monitoring apparatus, the epitaxial device comprising a reflective screen and a heating element, the apparatus comprising:
the determining module is used for determining the current working state of the epitaxial equipment;
the actual power information acquisition module is used for acquiring actual power information of the heating element in the current working state if the current working state is a preset working state;
and the judging module is used for judging whether the reflecting screen is damaged or not according to the actual power information.
9. The apparatus of claim 8, wherein the preset operating state comprises an epitaxial state and an etching state, and the actual power information obtaining module comprises:
an actual power information obtaining submodule, configured to obtain the actual power information of the heating element in the epitaxial state if the current operating state is the epitaxial state; or, if the current working state is the etching state, acquiring the actual power information of the heating element in the etching state.
10. The apparatus of claim 8, wherein the actual power information obtaining module comprises:
the recording submodule is used for recording the power value of the heating element in the current working state and recording the changed power value after the power value of the heating element is changed every time;
and the determining submodule is used for determining the actual power information of the heating element in the current working state according to all the recorded power values if the epitaxial equipment finishes the current working state.
11. The apparatus of claim 10, wherein the determining module comprises:
the preset power information acquisition submodule is used for acquiring preset power information corresponding to the current working state;
the comparison submodule is used for comparing the actual power information with the preset power information and determining power difference information;
and the judging submodule is used for judging whether the reflecting screen is damaged or not according to the power difference information.
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| US20030155072A1 (en) * | 2002-02-21 | 2003-08-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | RTA chamber with in situ reflective index monitor |
| US20060051077A1 (en) * | 2004-08-24 | 2006-03-09 | Fujitsu Limited | Rapid thermal processing apparatus and method of manufacture of semiconductor device |
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