CN111510100A - Piezoelectric resonator based on gallium oxide film and preparation method thereof - Google Patents
Piezoelectric resonator based on gallium oxide film and preparation method thereof Download PDFInfo
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- CN111510100A CN111510100A CN202010382773.6A CN202010382773A CN111510100A CN 111510100 A CN111510100 A CN 111510100A CN 202010382773 A CN202010382773 A CN 202010382773A CN 111510100 A CN111510100 A CN 111510100A
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- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 50
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000010408 film Substances 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000010409 thin film Substances 0.000 claims abstract description 32
- 239000013078 crystal Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 3
- 230000008878 coupling Effects 0.000 abstract description 4
- 238000010168 coupling process Methods 0.000 abstract description 4
- 238000005859 coupling reaction Methods 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000009776 industrial production Methods 0.000 abstract description 2
- 238000012545 processing Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000010356 wave oscillation Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a piezoelectric resonator based on a gallium oxide film and a preparation method thereof, and relates to the semiconductor technology. The piezoelectric film is characterized by comprising a substrate with a hollow middle part and a piezoelectric film fixedly arranged on the substrate, wherein an electrode pair is arranged at the corresponding position of the hollow substrate of the piezoelectric film, the electrode pair is electrically connected with the piezoelectric film, and the piezoelectric film is made of gallium oxide materials. The piezoelectric resonator has the advantages that the extremely strong piezoelectric property of gallium oxide is utilized, and the piezoelectric resonator can be guaranteed to have a high electromechanical coupling coefficient. Furthermore, the adoption of the phase gallium oxide single crystal film can not only avoid energy absorption caused by crystal boundary and defect and reduce loss, but also greatly improve the stability of the device. In addition, the thin film piezoelectric resonator has simple structure and good processing repeatability, and is beneficial to industrial production.
Description
Technical Field
The invention relates to a semiconductor technology, which is a new generation of information technology, in particular to a piezoelectric resonator based on a gallium oxide film and a preparation method thereof.
Background
The piezoelectric resonator is widely applied to the construction of radio frequency filters and oscillators, and is one of important devices in the field of radio frequency communication; furthermore, piezoelectric resonators may also be used to implement sensors. With the rapid development of communication technology, the times of big data and internet of things have come, and the development direction of the piezoelectric resonator is high frequency, low power consumption, miniaturization, integration, low cost and the like. Thin film piezoelectric resonators have frequency, power capacity, volume and cost advantages not comparable to conventional ceramic dielectric resonators. The thin-film piezoelectric resonator is generally composed of a piezoelectric thin film and electrodes, and the working principle of the thin-film piezoelectric resonator is that a radio-frequency electric signal excites acoustic wave oscillation in the piezoelectric thin film through the electrodes so as to realize resonance of a specific frequency. Therefore, the electromechanical coupling coefficient of the piezoelectric thin film is critical to determine the performance of the resonator. The existing piezoelectric film is usually ZnO, AlN and the like prepared by adopting a magnetron sputtering process, the piezoelectric property of the material is not strong enough, the material is of a polycrystalline structure, a large number of crystal boundaries and defects exist, the absorption of sound wave oscillation energy is caused, the loss is increased, and the electromechanical coupling coefficient is not high. In addition, a large number of grain boundaries and defects in the polycrystalline piezoelectric thin film may also cause problems such as poor stability and high temperature resistance characteristics of the resonator.
Disclosure of Invention
In order to solve the problems in the prior art, the present invention aims to provide a piezoelectric resonator based on a gallium oxide thin film and a method for manufacturing the same.
The piezoelectric resonator based on the gallium oxide film comprises a substrate with a hollow middle part and a piezoelectric film fixedly arranged on the substrate, wherein the piezoelectric film is provided with an electrode pair at the corresponding position of the hollow substrate, the electrode pair is electrically connected with the piezoelectric film, and the piezoelectric film is the gallium oxide film.
The gallium oxide film is a phase gallium oxide single crystal film.
The thickness of the gallium oxide film is 0.1um to 20 um.
The electrode pair comprises a first electrode and a second electrode, the first electrode is arranged on the upper surface of the gallium oxide film, and the second electrode is arranged on the lower surface of the gallium oxide film.
The electrode pair comprises a first electrode and a second electrode, wherein the first electrode and the second electrode are both arranged on the upper surface of the gallium oxide film and are of an interdigital electrode structure.
The invention relates to a preparation method of a piezoelectric resonator based on a gallium oxide film, which comprises the steps of growing the piezoelectric film on a substrate, etching and hollowing the substrate and manufacturing an electrode pair; the piezoelectric film is made of gallium oxide materials.
The piezoelectric film is a phase gallium oxide single crystal film.
The thickness of the piezoelectric film is 0.1um to 20 um.
The piezoelectric film is formed by epitaxial growth by a metal organic chemical vapor deposition or molecular beam epitaxy method.
The substrate etching and hollowing method specifically comprises the following steps: and forming a patterned mask on the lower surface of the substrate by a photoetching process, and etching the substrate by a dry etching process or a wet etching process to expose the piezoelectric film in the middle position.
The piezoelectric resonator based on the gallium oxide film and the preparation method thereof have the advantages that the piezoelectric resonator has high electromechanical coupling coefficient by utilizing the extremely strong piezoelectric property of the gallium oxide. Furthermore, the adoption of the phase gallium oxide single crystal film can not only avoid energy absorption caused by crystal boundary and defect and reduce loss, but also greatly improve the stability of the device. In addition, the thin film piezoelectric resonator has simple structure and good processing repeatability, and is beneficial to industrial production.
Drawings
Fig. 1 is a schematic structural diagram of a first embodiment of a piezoelectric resonator according to the present invention;
fig. 2 is a sectional view taken along line a-a in fig. 1.
Fig. 3 is a schematic structural view of a second embodiment of the piezoelectric resonator according to the present invention;
fig. 4 is a sectional view taken along line B-B in fig. 1.
Reference numerals: 101-substrate, 102-gallium oxide film, 103-first electrode, 104-second electrode.
Detailed Description
Example one
As shown in fig. 1 and 2, the gallium oxide-based thin film of the present invention includes a substrate 101 with a hollow center, and a piezoelectric thin film fixedly disposed on the substrate 101. The piezoelectric film is provided with an electrode pair at a hollow corresponding position of the substrate 101, and the electrode pair is electrically connected with the piezoelectric film. The piezoelectric film is a gallium oxide film 102, preferably a phase gallium oxide single crystal film, and the thickness is 0.1um to 20 um. The electrode pair comprises a first electrode 103 and a second electrode 104, the first electrode 103 is arranged on the upper surface of the gallium oxide film 102, and the second electrode 104 is arranged on the lower surface of the gallium oxide film 102.
The working principle is that the input and output of electric signals are realized by the first electrode 103 and the second electrode 104 which are respectively arranged on the upper surface and the lower surface of the gallium oxide film 102 by utilizing the longitudinal piezoelectric effect, and the gallium oxide film has the advantages of strong piezoelectric effect and low loss.
The preparation method comprises the following detailed steps:
growing a piezoelectric film: epitaxially growing a phase gallium oxide single crystal film on a substrate 101 by a Metal Organic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE) method, wherein the thickness is controlled within an optimal range of 0.1um to 20 um;
manufacturing the first electrode 103: preparing a first electrode 103 on the upper surface of the piezoelectric film by adopting a sputtering or electron beam evaporation method;
etching a deep groove of the substrate 101: forming a patterned mask on the lower surface of the substrate 101 through a photoetching process, and etching the substrate 101 by adopting a dry etching process or a wet etching process to expose the piezoelectric film in the middle position;
manufacturing the second electrode 104: and preparing the second electrode 104 on the lower surface of the exposed piezoelectric film by adopting a sputtering or electron beam evaporation method.
Example two
As shown in fig. 3 and 4, the difference between the present embodiment and the first embodiment is mainly that the electrode pair is a first electrode 103 and a second electrode 104 which are interdigitated electrode structures, and the electrode pair is disposed on the upper surface of the gallium oxide thin film 102, and the horizontal position is adapted to the position corresponding to the hollow-out of the substrate 101.
The working principle is that the input and output of electric signals are realized by the electrode pairs positioned on the upper surface of the gallium oxide film 102 by utilizing the transverse piezoelectric effect, and the gallium oxide film has the advantages of simple structure and few preparation process steps.
The preparation method comprises the following detailed steps:
growing a piezoelectric film: epitaxially growing a phase gallium oxide single crystal film on a substrate 101 by a Metal Organic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE) method, wherein the thickness is controlled within a preferred range of 0.1um to 20 um;
manufacturing an electrode pair: respectively preparing a first electrode 103 and a second electrode 104 on the upper surface of the piezoelectric film by adopting a sputtering or electron beam evaporation method;
etching a deep groove of the substrate 101: a patterned mask is formed on the lower surface of the substrate 101 by a photolithography process, and the substrate 101 is etched by a dry or wet etching process to expose the piezoelectric film at the middle position. Compared with the first embodiment, the electrode pair forming step is more normalized, so that the structure is simple and the process steps are reduced.
It will be apparent to those skilled in the art that various other changes and modifications may be made in the above-described embodiments and concepts and all such changes and modifications are intended to be within the scope of the appended claims.
Claims (10)
1. The piezoelectric resonator based on the gallium oxide thin film comprises a substrate (101) with a hollow middle part and a piezoelectric thin film fixedly arranged on the substrate (101), wherein an electrode pair is arranged at the corresponding position of the hollow middle part of the substrate (101) of the piezoelectric thin film and is electrically connected with the piezoelectric thin film, and the piezoelectric thin film is the gallium oxide thin film (102).
2. The piezoelectric resonator based on gallium oxide thin film according to claim 1, characterized in that the gallium oxide thin film (102) is a phase gallium oxide single crystal thin film.
3. The piezoelectric resonator based on a gallium oxide thin film according to claim 1, wherein the thickness of the gallium oxide thin film (102) is 0.1um to 20 um.
4. The piezoelectric resonator based on a gallium oxide thin film according to claim 1, wherein the electrode pair comprises a first electrode (103) and a second electrode (104), the first electrode (103) is disposed on the upper surface of the gallium oxide thin film (102), and the second electrode (104) is disposed on the lower surface of the gallium oxide thin film (102).
5. The piezoelectric resonator based on the gallium oxide thin film according to claim 1, wherein the electrode pair comprises a first electrode (103) and a second electrode (104), and the first electrode (103) and the second electrode (104) are both disposed on the upper surface of the gallium oxide thin film (102) and are in an interdigital electrode structure.
6. A preparation method of a piezoelectric resonator based on a gallium oxide film comprises the steps of growing the piezoelectric film on a substrate (101), etching and hollowing the substrate (101) and manufacturing an electrode pair; the piezoelectric film is characterized in that the piezoelectric film is made of gallium oxide materials.
7. The production method according to claim 6, wherein the piezoelectric thin film is a phase gallium oxide single crystal thin film.
8. The production method according to claim 6, wherein the thickness of the piezoelectric thin film is 0.1um to 20 um.
9. The method according to claim 6, wherein the piezoelectric film is epitaxially grown by metal organic chemical vapor deposition or molecular beam epitaxy.
10. The preparation method according to claim 6, wherein the step of etching the substrate (101) to make a hollow is as follows: a patterned mask is formed on the lower surface of the substrate (101) through a photoetching process, and the substrate (101) is etched through a dry etching process or a wet etching process to expose the piezoelectric film in the middle position.
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| CN202010382773.6A CN111510100B (en) | 2020-05-08 | 2020-05-08 | Piezoelectric resonator based on gallium oxide film and preparation method thereof |
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| CN111510100B CN111510100B (en) | 2021-07-02 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111640857A (en) * | 2020-07-20 | 2020-09-08 | 中山大学 | Application of gallium oxide in piezoelectric material, piezoelectric film and piezoelectric device |
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| WO2019058618A1 (en) * | 2017-09-20 | 2019-03-28 | 株式会社ニコン | Glass composition, optical element and optical device using same |
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2020
- 2020-05-08 CN CN202010382773.6A patent/CN111510100B/en active Active
Patent Citations (6)
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Cited By (1)
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