CN111508949A - Receiving device based on waveguide balanced detector and integration method - Google Patents
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- 238000010586 diagram Methods 0.000 description 13
- 230000001427 coherent effect Effects 0.000 description 11
- 230000003321 amplification Effects 0.000 description 7
- 238000003199 nucleic acid amplification method Methods 0.000 description 7
- 238000005070 sampling Methods 0.000 description 7
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
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- 239000002184 metal Substances 0.000 description 1
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Abstract
The embodiment of the application provides a receiving device based on a waveguide balanced detector and an integration method, wherein the receiving device of the balanced detector comprises: the integrated silicon optical chip is used for receiving the space signal light and the local oscillator light and obtaining a group of differential photocurrent signals through photoelectric conversion; the reading circuit chip is used for converting the differential photocurrent signal into a digital voltage signal; the integrated silicon optical chip comprises a passive silicon optical device and an active waveguide balance detector, and the integrated silicon optical chip and the reading circuit chip are interconnected and integrated in a three-dimensional stacking mode through silicon through holes. The receiving device based on the waveguide balance detector has the advantages of high integration level, high detection sensitivity, high signal-to-noise ratio, capability of expanding to a large view field and the like, realizes three-dimensional integration of the integrated silicon optical chip and the CMOS integrated read-out circuit chip by utilizing the through silicon via technology, and is small in size, simple in structure, small in optical loss and low in adjustment difficulty.
Description
Technical Field
The application belongs to the technical field of balance detection, and particularly relates to a receiving device based on a waveguide balance detector and an integration method.
Background
Compared with the traditional laser radar ranging system, the coherent detection laser radar technology based on the balanced detector not only has the advantages of strong detection capability, high conversion gain, good filtering performance and high stability, but also has strong anti-interference capability, can work under the condition of strong ambient light interference, can meet the requirement of high-precision detection, can also detect information such as amplitude, intensity, phase and the like of signals, and has good application prospect in the laser radar ranging system.
The coherent detection principle based on the balanced detector is that a group of photoelectric detector devices with the same photoelectric property, namely the balanced detector, are arranged in the same detection system. At present, coherent detection on-chip systems based on balanced detectors are still in a starting stage, some coherent detection laser radar receiving systems based on single balanced detectors realize detection distances of 1.4m and accuracy reaching micron-scale level, but many problems to be solved still exist in large-scale array integration. In recent years, coherent detection systems based on balanced detectors have also been developed domestically. However, at the present stage, the design of the on-chip balance detector receiving system in China is not deep, the optical path implementation method is complex, the detection view field is small, and the on-chip balance detector receiving system is implemented by adopting a discrete photoelectric device, so that the integration level is poor, and the cost is high.
Disclosure of Invention
The invention provides a receiving device based on a waveguide balanced detector and an integration method, and aims to solve the problems that an existing balanced detector receiving system is complex in light path arrangement implementation method, small in detection view field, poor in integration level and high in cost due to the fact that a discrete photoelectric device is adopted for implementation.
According to a first aspect of embodiments of the present application, there is provided a receiving apparatus based on a waveguide balanced probe, including:
the integrated silicon optical chip is used for receiving the space signal light and the local oscillator light and obtaining a group of differential photocurrent signals through photoelectric conversion; and
the reading circuit chip is used for converting the differential photocurrent signal into a digital voltage signal;
the integrated silicon optical chip comprises a passive silicon optical device and an active waveguide balance detector, and the integrated silicon optical chip and the reading circuit chip are interconnected and integrated in a three-dimensional stacking mode through silicon through holes.
Optionally, the passive silicon optical device comprises:
the integrated grating array is used for receiving the space signal light, coupling the space signal light into the silicon-based waveguide and then sending the space signal light to the multimode interference coupler array; and
the multimode interference coupler array is used for receiving the space signal light and the local oscillator light through the silicon-based waveguide, and performing interference frequency mixing on the space signal light and the local oscillator light to obtain a group of output optical signals with phase difference of 180 degrees;
the active waveguide balance detector is specifically a waveguide balance detector array and is used for receiving the output optical signals and obtaining a group of differential photocurrent signals through photoelectric conversion;
the integrated grating array, the multimode interference coupler array and the waveguide balance detector array are sequentially connected through a silicon-based waveguide.
Optionally, the array size of the integrated grating array, the multimode interference coupler array, and the waveguide balanced detector array are all greater than 2 × 2.
Optionally, the integrated grating array includes a plurality of coupling gratings, the number of the coupling gratings is the same as the number of the multimode interference couplers in the multimode interference coupler array, and the coupling gratings are connected with the multimode interference couplers in a one-to-one correspondence manner through silicon-based waveguides.
Optionally, the balanced detector array includes a plurality of sige waveguide balanced detectors, the number of the sige waveguide balanced detectors is the same as the number of the multimode interference couplers in the multimode interference coupler array, and the sige waveguide balanced detectors are connected to the multimode interference couplers in a one-to-one correspondence manner through silicon-based waveguides.
Optionally, the transimpedance amplifier is a differential low-noise high-bandwidth transimpedance amplifier, and an input end of the transimpedance amplifier is connected to an output end of the waveguide balanced detector array through a through-silicon via.
Optionally, the readout circuit chip includes:
a transimpedance amplifier: the differential photoelectric current signal is amplified into a voltage signal through low noise;
an analog-to-digital converter: for converting the voltage signal into a digital signal;
an output drive circuit: the interface level is used for carrying out signal output corresponding to the digital signal; and
a time division multiplexing circuit; and the enabling end of the trans-impedance amplifier is connected and is used for carrying out gating control through a time sequence to realize signal reading.
Optionally, the integrated grating array, the multimode interference coupler array and the waveguide balance detector array of the integrated silicon optical chip are integrally interconnected by adopting a GeSi silicon optical process; the transimpedance amplifier, the analog-to-digital converter, the output driving circuit and the time division multiplexing circuit of the readout circuit chip are integrally interconnected by adopting a CMOS (complementary metal oxide semiconductor) process.
According to a second aspect of the embodiments of the present application, there is provided an integration method of a receiving apparatus based on a waveguide balanced detector, specifically including the following steps:
adopting a GeSi silicon optical process to integrate a passive silicon optical device and an active waveguide balance detector to obtain an integrated silicon optical chip; adopting CMOS process integration to obtain a read-out circuit chip;
and the integrated silicon optical chip and the readout circuit chip are interconnected and integrated in a three-dimensional stacking mode through silicon through holes.
According to a third aspect of the embodiments of the present application, there is provided a receiving method based on a waveguide balanced detector, specifically including the following steps:
receiving space signal light and local oscillator light, and obtaining a group of differential photocurrent signals through photoelectric conversion;
and converting the differential photocurrent signal into a digital voltage signal.
By adopting the receiving device, the receiving method and the integration method based on the waveguide balance detector in the embodiment of the application, the receiving device comprises: the integrated silicon optical chip is used for receiving the space signal light and the local oscillator light and obtaining a group of differential photocurrent signals through photoelectric conversion; the reading circuit chip is used for converting the differential photocurrent signal into a digital voltage signal; the integrated silicon optical chip comprises a passive silicon optical device and an active waveguide balance detector, and the integrated silicon optical chip and the reading circuit chip are interconnected and integrated in a three-dimensional stacking mode through silicon through holes. The receiving device based on the waveguide balance detector has the advantages of high integration level, high detection sensitivity, high signal-to-noise ratio, capability of expanding to a large view field and the like, can realize the miniaturization and all solid state of detection systems such as laser radars and the like, and has good performance in real-time, large-range and high-precision distance/speed measurement. The three-dimensional integration of the integrated silicon optical chip and the CMOS integrated read-out circuit chip is realized by utilizing the through silicon via technology, and the on-chip coherent detection receiving system which has the advantages of small volume, simple structure, small optical loss, low adjustment difficulty and easy realization is realized.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
fig. 1 is a schematic structural diagram of a receiving device based on a waveguide balanced detector according to an embodiment of the present application;
fig. 2 is a schematic circuit diagram of a receiving device based on a waveguide balanced detector according to an embodiment of the present application;
a schematic cross-sectional structure diagram of a receiving device based on a waveguide balanced detector according to an embodiment of the present application is shown in fig. 3;
a receiving schematic diagram of a receiving device based on a waveguide balanced detector according to an embodiment of the application is shown in fig. 4;
FIG. 5 is a schematic diagram illustrating steps of an integrated method of a waveguide balanced detector based receiving apparatus according to an embodiment of the present application;
fig. 6 shows a schematic step diagram of a receiving method based on a waveguide balanced detector according to an embodiment of the present application.
Detailed Description
In the process of implementing the present application, the inventor finds that the existing coherent detection system based on the balanced detector has a complex optical path implementation method, a small detection field of view, and is implemented by using a discrete photoelectric device, which has poor integration level and high cost. There are great problems in large-scale arrayed integration.
By adopting the receiving device based on the waveguide balance detector in the embodiment of the application, the local oscillator light and the signal light are input into the balance detector after interference, the optical signals are converted into a group of differential electrical signals, and because the two interfered optical signals have a phase difference of 180 degrees, the photocurrents generated after passing through the balance detector respectively have opposite phases. The group of electric signals are subjected to differential amplification operation by a trans-impedance amplifier to obtain output voltage signals with frequency information, and further subjected to sampling by a digital-to-analog converter to obtain frequency information, wherein the frequency information can be used for obtaining detection distance information by measurement and calculation. The light path complexity is low, and the detection field of view is large; the three-dimensional integration of the integrated silicon optical chip and the CMOS integrated read-out circuit chip is realized by utilizing the TSV technology, and the on-chip coherent detection receiving system which is small in size, simple in structure, small in optical loss, low in adjustment difficulty and easy to realize is realized. The system volume and the system adjusting difficulty are greatly reduced, the system stability is improved, and the system has the advantages of simple structure, small volume and low power consumption.
In order to make the technical solutions and advantages of the embodiments of the present application more apparent, the following further detailed description of the exemplary embodiments of the present application with reference to the accompanying drawings makes it clear that the described embodiments are only a part of the embodiments of the present application, and are not exhaustive of all embodiments. It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict.
Example 1
A schematic structural diagram of a receiving device based on a waveguide balanced detector according to an embodiment of the present application is shown in fig. 1. A schematic circuit diagram of a receiving device based on a waveguide balanced detector according to an embodiment of the present application is shown in fig. 2.
As shown in fig. 1, the receiving apparatus based on the waveguide balanced detector provided in the embodiment of the present application includes an integrated silicon optical chip 1 and a readout circuit chip 2, where in the receiving apparatus based on the waveguide balanced detector of the present embodiment, the integrated silicon optical chip 1 includes a passive silicon optical device and an active waveguide balanced detector 103, and the integrated silicon optical chip 1 and the readout circuit chip 2 are interconnected and integrated in a three-dimensional stacking manner through-silicon vias (TSV-through-silicon-via).
The specific implementation method comprises the following steps: thinning the integrated silicon optical chip 1 and the reading circuit chip 2, etching TSV through holes to complete electrical interconnection of the integrated silicon optical chip 1 and the reading circuit chip 2, wherein the electrical interconnection of the integrated silicon optical chip 1 and the reading circuit chip 2 mainly refers to connection of an output electrode of an active waveguide balance detector in the integrated silicon optical chip and an input end of the reading circuit chip; and then, wafer-level bonding is carried out through a direct bonding technology, so that three-dimensional stacking integration of the integrated silicon optical chip 1 and the reading circuit chip 2 is realized.
The integrated silicon optical chip 1, namely the integrated passive silicon optical device and the silicon optical chip of the active waveguide balance detector, is realized by a GeSi process, and is used for coupling signal light to a balance detector array, interfering local oscillator light with the signal light to obtain a group of optical signals with a phase difference of 180 degrees, and transmitting the optical signals to the balance detector array to generate differential photocurrent signals.
Specifically, the passive silicon optical device includes an integrated grating array 101, a multi-mode interference coupler array 102, and a silicon-based waveguide 104, and the active waveguide balanced detector is specifically a waveguide balanced detector array 103. The waveguide balance detector 103 is implemented based on a GeSi process by using a PIN structure, and a photosensitive region thereof is connected with an output end of the multimode interference coupler 102 through a silicon-based waveguide.
Specifically, the array size of the integrated grating array 101, the multimode interference coupler array 102 and the waveguide balanced detector array 103 is larger than 2 × 2. specifically, the integrated grating array 101 is used for receiving the spatial signal light, coupling the spatial signal light into the silicon-based waveguide, and sending the spatial signal light to the multimode interference coupler array 102.
A Multimode Interference coupler (MMI)102 configured to receive spatial signal light through a silicon-based waveguide and directly receive local oscillator light; the optical fiber grating array is used for performing interference mixing on the spatial signal light received by the integrated grating array 101 and the directly received local oscillator light to obtain a group of output optical signals with a phase difference of 180 degrees, and then the output optical signals are sent to a photosensitive area of the balanced detector array 103.
Specifically, the multimode interference coupler array 102 includes two inputs and two outputs, the splitting ratio of the multimode interference coupler is 1:1, the phase difference of the output light is 180 °, and the light intensity ratio is 1: 1.
The waveguide balanced detector array 103 is used for obtaining a group of differential photocurrent signals through photoelectric conversion according to the output optical signals of the multimode interference coupler array 102;
the integrated grating array 101, the multimode interference coupler array 102 and the waveguide balanced detector array 103 are connected in sequence through a silicon-based waveguide 104.
The grating array of the integrated silicon optical chip 1 comprises a plurality of coupling gratings, the number of the coupling gratings is the same as that of the multimode interference couplers in the multimode interference coupler array, and one coupling grating is connected with the multimode interference couplers in a one-to-one correspondence mode through a silicon-based waveguide; the output end of the multimode interference coupler is connected with the waveguide balanced detector array 103 through a silicon-based waveguide.
The waveguide balanced detector array 103 is configured to obtain a set of differential photocurrent signals through photoelectric conversion according to the output optical signals.
Specifically, the waveguide balance detector array 103 includes a plurality of sige waveguide balance detectors of PIN structures, the number of the sige waveguide balance detectors is the same as that of the multimode interference couplers in the multimode interference coupler array, and the sige waveguide balance detectors are connected to the multimode interference couplers in a one-to-one correspondence. Each balanced detector of the waveguide balanced detector array 103 is composed of two PIN structure photodetectors with the same photoelectric performance.
And the reading circuit chip 2 is used for converting the differential photocurrent signal into a digital voltage signal and reading the digital voltage signal. The array of the read-out circuit chip 2 realizes array read-out in a time division multiplexing mode, and distance information demodulation is realized by reading the frequency of the voltage signal.
Specifically, the readout circuit chip 2 includes a transimpedance amplifier TIA, an analog-to-digital converter ADC, an output driver circuit CM L, and a time division multiplexing circuit.
The transimpedance amplifier TIA is configured to perform low-noise amplification on the differential photocurrent signal to obtain a voltage signal, specifically, perform low-noise amplification on the differential photocurrent signal in the waveguide balanced detector array 103, and input the voltage signal to the analog-to-digital converter ADC.
The transimpedance amplifier TIA is a differential low-noise high-bandwidth transimpedance amplifier, and an input end of the transimpedance amplifier TIA is connected with an output end of the waveguide balanced detector array 103 through a silicon through hole.
Furthermore, the transimpedance amplifier TIA includes a differential input stage and an adjustable gain amplifier, the differential input stage is configured to receive a differential current signal and output a low-noise voltage signal, and the adjustable gain amplifier is configured to further amplify the voltage signal, and implement stable swing voltage output by adjustable gain, so as to improve a dynamic range.
And the analog-to-digital converter ADC is used for converting the analog signal output by the transimpedance amplifier TIA into a digital signal. The input end of the analog-to-digital converter ADC is connected with the output end of the transimpedance amplifier TIA.
The analog-to-digital converter ADC comprises a comparator, a latch, an encoder and an output register, and the input end of the analog-to-digital converter ADC is connected with the output end of the TIA.
Preferably, the analog-to-digital converter ADC may adopt a flash-ADC structure to achieve high sampling rate requirements.
The output driving circuit CM L is used for outputting the digital signal corresponding to the interface level, the output driving circuit CM L comprises a level converter and an impedance matching circuit, and the input end of the output driving circuit is connected with the output end of the analog-to-digital converter ADC.
Preferably, the output voltage driver employs current-mode logic levels to achieve higher operating frequencies and achieve good impedance matching.
The time division multiplexing circuit is connected with the enabling end of the differential trans-impedance amplifier and carries out gating control through time sequence to realize signal reading. The time division multiplexing circuit comprises a multiplexer and an encoder, wherein the output of the multiplexer is connected with the enable end of the TIA.
In this embodiment, the integrated grating array 101, the multimode interference coupler array 102 and the waveguide balanced detector array 103 of the integrated silicon optical chip 1 are integrally interconnected by adopting a GeSi silicon optical process, and the transimpedance amplifier TIA, the analog-to-digital converter ADC, the output driver circuit CM L and the time division multiplexing circuit of the readout circuit chip 2 are integrally interconnected by adopting a CMOS process.
The design of the reading circuit chip 2 is realized by adopting a CMOS (complementary metal oxide semiconductor) process, and the low-noise high-bandwidth trans-impedance amplifier can realize the remote detection with strong anti-interference capability; the high-speed analog-to-digital converter can realize higher sampling rate and reduce the system error rate; the output voltage driver can realize higher working frequency, further reduce the error rate, simultaneously realize the impedance matching with the output interface and improve the system performance.
The integrated silicon optical chip 1 and the integrated readout circuit chip 2 of the embodiment of the application are interconnected in a three-dimensional integration manner.
A schematic circuit diagram of a receiving device based on a waveguide balanced detector according to an embodiment of the present application is shown in fig. 2.
As shown in fig. 2, based on the specific circuit principle of the receiving apparatus of the waveguide balanced detector, the transimpedance amplifier TIA includes a differential input stage and an adjustable gain voltage amplifier, a group of differential current signals generated by the balanced detector (BPD) through photoelectric conversion are respectively input to the input stage (input stage) of the transimpedance amplifier, variable gain amplification is realized through the adjustable voltage amplifier (VGA), the amplified voltage signals are input to an analog-to-digital converter (ADC), digital voltage signals are obtained through sampling and quantization, and the digital voltage signals are output to the CM L output driving circuit, so as to realize high-bandwidth impedance matching output.
A schematic cross-sectional structure diagram of a receiving device based on a waveguide balanced detector according to an embodiment of the present application is shown in fig. 3.
As shown in fig. 3, the integrated silicon optical chip 1 is implemented by a GeSi silicon optical process, and includes a substrate 107, an integrated grating array 101, a multimode interference coupler array 102, a silicon-based waveguide 104 and other passive devices, and an active device balanced detector array 103.
The output of the waveguide balanced detector array 103 is connected to the input of the transimpedance amplifier of the readout circuitry chip 2 via metal contact assemblies (106, 23) and through silicon vias 105.
The multi-mode interference coupler array (MMI)102 receives the spatial signal light of the integrated grating array 101 through the signal light transmission waveguide 1041, and receives the local oscillator light through the local oscillator light transmission waveguide 1042.
The CMOS readout circuit chip 2 is implemented by a CMOS standard process, and the readout circuit chip 2 includes a CMOS integrated process silicon substrate 21 and a CMOS polysilicon gate 22 on the CMOS integrated process silicon substrate 21. The input end of the differential transimpedance amplifier is connected with the output electrode of the balanced detector of the integrated silicon optical chip 1 through the silicon through hole 105. The output of the read-out circuit chip 2 is connected to a processor for further digital processing to obtain distance information.
A receiving schematic diagram of a receiving device based on a waveguide balanced detector according to an embodiment of the present application is shown in fig. 4.
As shown in fig. 4, the spatial signal light is received and coupled by the integrated grating array 101 and then sent to the multimode interference coupler array 102, and the multimode interference coupler array 102 performs interference mixing on the received spatial signal light and the local oscillator light to obtain a group of output optical signals with a phase difference of 180 degrees; the output optical signal is transmitted to the waveguide balanced detector array 103 through the silicon-based waveguide 104, and finally the digital voltage signal is read by the CMOS read-out circuit chip 2.
The receiving device based on the waveguide balanced detector in the embodiment of the application comprises: the integrated silicon optical chip is used for receiving the space signal light and the local oscillator light and obtaining a group of differential photocurrent signals through photoelectric conversion; the reading circuit chip is used for converting the differential photocurrent signal into a digital voltage signal; wherein the readout circuit chip includes: the circuit comprises a transimpedance amplifier, an analog-to-digital converter, an output drive circuit and a time division multiplexing circuit; the integrated silicon optical chip comprises a passive silicon optical device and an active waveguide balance detector, and the integrated silicon optical chip and the reading circuit chip are interconnected and integrated in a three-dimensional stacking mode through silicon through holes. The system has the advantages of high integration level, high detection sensitivity, high signal-to-noise ratio, capability of being expanded to a large view field and the like, can realize the miniaturization and all solid state of detection systems such as laser radars and the like, and has good performance in real-time, large-range and high-precision distance/speed measurement.
Specifically, the integrated silicon optical chip is adopted, and the integrated grating array and the multi-mode interference coupler array are used for carrying out interference frequency mixing on the signal light and the local oscillator light, so that the system volume and the adjustment difficulty are greatly reduced, and the system stability is improved; the waveguide balance detector with the PIN structure is realized by utilizing a silicon optical GeSi process, the transmission and photoelectric conversion of optical signals are realized by replacing a traditional discrete optical element or an optical fiber device with a silicon-based waveguide device, the monolithic integration of a passive silicon optical device and an active balance detector can be realized, and the optical loss is reduced.
The coherent detection system on-chip optical path is realized by a passive device of an integrated silicon optical chip, signal light is collected by a coupling grating, the complexity of the optical path is low, the use of discrete components is reduced by a silicon-based waveguide, the stability of the system is improved, the difficulty of optical path adjustment is greatly reduced, the system implementation cost is reduced and the system integration level is improved by a three-dimensional integration mode with a read-out circuit chip, the design of the read-out circuit chip is realized by a CMOS (complementary metal oxide semiconductor) process, a low-noise high-bandwidth trans-impedance amplifier can realize remote detection with strong anti-interference capability, the dynamic range of the circuit is improved by an adjustable gain amplification structure, a high-speed analog-to-digital converter can realize higher sampling rate and reduce the system error rate, a CM L output voltage driver can realize higher working frequency and further reduce the error rate, and simultaneously realize impedance matching with.
In addition, the intermediate frequency signal of the balanced detector is amplified and sampled by utilizing an integrated CMOS (complementary metal oxide semiconductor) process technology, so that the noise is low, the bandwidth is high, and the integration level is high; the three-dimensional integration of the integrated silicon optical chip and the CMOS integrated read-out circuit chip is realized by utilizing the TSV technology, and the on-chip coherent detection receiving system which is small in size, simple in structure, small in optical loss, low in adjustment difficulty and easy to realize is realized.
Example 2
For details that are not disclosed in the receiving apparatus and method based on the waveguide balanced detector of this embodiment, please refer to the receiving apparatus and method based on the waveguide balanced detector in other embodiments.
Fig. 5 shows a schematic step diagram of an integration method of a waveguide balanced detector based receiving device according to an embodiment of the application.
As shown in fig. 5, the method for integrating the receiving apparatus based on the waveguide balanced detector specifically includes the following steps:
s1: adopting a GeSi silicon optical process to integrate a passive silicon optical device and an active waveguide balance detector to obtain an integrated silicon optical chip; adopting CMOS process integration to obtain a read-out circuit chip;
s2: and the integrated silicon optical chip and the reading circuit chip are interconnected and integrated in a three-dimensional stacking mode through silicon through holes.
The specific implementation method for interconnection and integration of the integrated silicon optical chip and the readout circuit chip comprises the following steps: thinning the integrated silicon optical chip 1 and the reading circuit chip 2, etching TSV through holes to complete electrical interconnection of the integrated silicon optical chip 1 and the reading circuit chip 2, wherein the electrical interconnection of the integrated silicon optical chip 1 and the reading circuit chip 2 mainly refers to connection of an output electrode of an active waveguide balance detector in the integrated silicon optical chip and an input end of the reading circuit chip; and then, wafer-level bonding is carried out through a direct bonding technology, so that three-dimensional stacking integration of the integrated silicon optical chip 1 and the reading circuit chip 2 is realized.
As shown in fig. 1, a receiving apparatus based on a waveguide balanced detector provided in this embodiment of the present application includes an integrated silicon optical chip 1 and a readout circuit chip 2, where in the receiving apparatus based on a waveguide balanced detector of this embodiment, the integrated silicon optical chip 1 integrates a passive silicon optical device and an active waveguide balanced detector 103, and the passive silicon optical device includes an integrated grating array 101 and a multimode interference coupler array 102. The integrated silicon optical chip 1 and the readout circuit chip 2 are interconnected and integrated in a three-dimensional stacking manner Through Silicon Vias (TSV). The output end of the integrated silicon optical chip 1 is connected with the input end of the differential transimpedance amplifier 201 through a through silicon via.
The integrated silicon optical chip 1 is a silicon optical chip integrating a passive silicon optical device and an active waveguide balance detector, is realized by a GeSi process, is used for coupling signal light to a balance detector array, interferes local oscillator light with the signal light to obtain a group of optical signals with a phase difference of 180 degrees, and transmits the optical signals to the balance detector array to generate differential photocurrent signals.
The integrated silicon optical chip 1 comprises an integrated grating array 101, a multi-mode interference coupler array 102, a waveguide balanced detector array 103 and a silicon-based waveguide 104. The waveguide balance detector 103 is implemented based on a GeSi process by using a PIN structure, and a photosensitive region thereof is connected with an output end of the multimode interference coupler 102 through a silicon-based waveguide.
In particular, the array size of the passive silicon optical devices and the active balanced detector array of the integrated silicon optical chip 1 is larger than 2 × 2.
The integrated grating array 101, the multimode interference coupler array 102 and the waveguide balanced detector array 103 are connected in sequence through a silicon-based waveguide 104.
The grating array of the integrated silicon optical chip 1 comprises a plurality of coupling gratings, the number of the coupling gratings is the same as that of the multimode interference couplers in the multimode interference coupler array, and one coupling grating is connected with the multimode interference couplers in a one-to-one correspondence mode through a silicon-based waveguide; the output end of the multimode interference coupler is connected with the waveguide balanced detector array 103 through a silicon-based waveguide.
The waveguide balanced detector array 103 is configured to obtain a set of differential photocurrent signals through photoelectric conversion according to the output optical signals. Specifically, the waveguide balance detector array 103 includes a plurality of PIN structured sige waveguide balance detectors, the number of the sige waveguide balance detectors is the same as the number of the multimode interference couplers in the multimode interference coupler array, and the sige waveguide balance detectors are connected to the multimode interference couplers in the multimode interference coupler array 102 in a one-to-one correspondence manner. Each balanced detector of the waveguide balanced detector array 103 is composed of two PIN structure photodetectors with the same photoelectric performance.
The reading circuit chip 2 is used for converting the differential photocurrent signal into a digital voltage signal and reading the digital voltage signal, the array of the reading circuit chip 2 realizes array reading in a time division multiplexing mode, and demodulation of distance information is realized by reading the frequency of the voltage signal, and specifically, the reading circuit chip 2 comprises a transimpedance amplifier TIA, an analog-to-digital converter ADC, an output driving circuit CM L and a time division multiplexing circuit.
The integration method of the receiving device based on the waveguide balance detector reduces the use of discrete components through the silicon-based waveguide, improves the stability of the system, greatly reduces the difficulty of light path adjustment, reduces the system implementation cost and improves the system integration level through a three-dimensional integration mode with a read-out circuit chip, the read-out circuit chip is designed by adopting a CMOS (complementary metal oxide semiconductor) process, a low-noise high-bandwidth trans-impedance amplifier can realize remote detection with strong anti-interference capability, the dynamic range of the circuit is improved through an adjustable gain amplification structure, a high-speed analog-to-digital converter can realize higher sampling rate and reduce the system error rate, a CM L output voltage driver can realize higher working frequency and further reduce the error rate, simultaneously, the impedance matching with an output interface is realized, and the system performance and accuracy are improved.
Example 3
For details that are not disclosed in the receiving apparatus based on the waveguide balanced detector of this embodiment, please refer to the receiving apparatus based on the waveguide balanced detector and the integration method in other embodiments.
Fig. 6 shows a schematic step diagram of a receiving method based on a waveguide balanced detector according to an embodiment of the present application.
As shown in fig. 6, the receiving method based on the waveguide balanced detector specifically includes the following steps:
s101: receiving space signal light and local oscillator light, and obtaining a group of differential photocurrent signals through photoelectric conversion;
s102: the differential photocurrent signal is converted to a digital voltage signal.
Specifically, the integrated silicon optical chip receives space signal light and local oscillator light, and a group of differential photocurrent signals are obtained through photoelectric conversion; and finally, converting the differential photocurrent signal into a digital voltage signal through a reading circuit chip. The integrated silicon optical chip integrates a passive silicon optical device and an active waveguide balance detector, and the integrated silicon optical chip and the reading circuit chip realize interconnection integration in a three-dimensional stacking mode through silicon through holes, namely TSV through-silicon-Via (TSV).
The readout circuit chip includes: the circuit comprises a transimpedance amplifier, an analog-to-digital converter, an output drive circuit and a time division multiplexing circuit; the output end of the integrated silicon optical chip is connected with the input end of the differential transimpedance amplifier through a silicon through hole.
Specifically, the spatial signal light is received and coupled through the integrated grating array and then sent to the multimode interference coupler array, and the multimode interference coupler array performs interference frequency mixing on the received spatial signal light and local oscillator light to obtain a group of output optical signals with a phase difference of 180 degrees; the output optical signals are transmitted to the waveguide balance detector array through the silicon-based waveguide, and finally the digital voltage signals are read by the CMOS reading circuit chip.
By adopting the receiving method based on the waveguide balance detector in the embodiment of the application, the integrated silicon optical chip is used for receiving the space signal light and the local oscillator light, and a group of differential photocurrent signals are obtained through photoelectric conversion; the reading circuit chip is used for converting the differential photocurrent signal into a digital voltage signal; wherein the readout circuit chip includes: the circuit comprises a transimpedance amplifier, an analog-to-digital converter, an output drive circuit and a time division multiplexing circuit; the integrated silicon optical chip comprises a passive silicon optical device and an active waveguide balance detector, and the integrated silicon optical chip and the reading circuit chip are interconnected and integrated in a three-dimensional stacking mode through silicon through holes. The system has the advantages of high integration level, high detection sensitivity, high signal-to-noise ratio, capability of being expanded to a large view field and the like, can realize the miniaturization and all solid state of detection systems such as laser radars and the like, and has good performance in real-time, large-range and high-precision distance/speed measurement.
Specifically, the integrated silicon optical chip is adopted, and the integrated grating array and the multi-mode interference coupler array are used for carrying out interference frequency mixing on the signal light and the local oscillator light, so that the system volume and the adjustment difficulty are greatly reduced, and the system stability is improved; the waveguide balance detector with the PIN structure is realized by utilizing a silicon optical GeSi process, the transmission and photoelectric conversion of optical signals are realized by replacing a traditional discrete optical element or an optical fiber device with a silicon-based waveguide device, the monolithic integration of a passive silicon optical device and an active balance detector can be realized, and the optical loss is reduced.
The on-chip optical path based on the receiving of the waveguide balance detector is realized by a passive device of an integrated silicon optical chip, signal light is collected by a coupling grating, the complexity of the optical path is low, the use of discrete components is reduced by a silicon-based waveguide, the stability of the system is improved, the difficulty of optical path adjustment is greatly reduced, the system implementation cost is reduced and the system integration level is improved by a three-dimensional integration mode with a read-out circuit chip, the design of the read-out circuit chip is realized by a CMOS (complementary metal oxide semiconductor) process, a low-noise high-bandwidth trans-impedance amplifier can realize remote detection with strong anti-interference capability, the dynamic range of the circuit is improved by an adjustable gain amplification structure, a high-speed analog-to-digital converter can realize higher sampling rate and reduce the system error rate, a CM L output voltage driver can realize higher working frequency and further reduce the error rate, and simultaneously realize impedance.
In addition, the intermediate frequency signal of the balanced detector is amplified and sampled by utilizing an integrated CMOS (complementary metal oxide semiconductor) process technology, so that the noise is low, the bandwidth is high, and the integration level is high; the three-dimensional integration of the integrated silicon optical chip and the CMOS integrated read-out circuit chip is realized by utilizing the TSV technology, and the on-chip coherent detection receiving system which is small in size, simple in structure, small in optical loss, low in adjustment difficulty and easy to realize is realized.
While the preferred embodiments of the present application have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all alterations and modifications as fall within the scope of the application.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present application without departing from the spirit and scope of the application. Thus, if such modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is intended to include such modifications and variations as well.
Claims (9)
1. A receiving device based on a waveguide balanced detector is characterized by specifically comprising:
the integrated silicon optical chip is used for receiving the space signal light and the local oscillator light and obtaining a group of differential photocurrent signals through photoelectric conversion; and
the reading circuit chip is used for converting the differential photocurrent signal into a digital voltage signal;
the integrated silicon optical chip comprises a passive silicon optical device and an active waveguide balance detector, and the integrated silicon optical chip and the reading circuit chip are interconnected and integrated in a three-dimensional stacking mode through silicon through holes.
2. The waveguide balanced detector-based receiving device according to claim 1, wherein the passive silicon optical device comprises:
the integrated grating array is used for receiving the space signal light, coupling the space signal light into the silicon-based waveguide and then sending the space signal light to the multimode interference coupler array; and
the multimode interference coupler array is used for receiving the space signal light and the local oscillator light through the silicon-based waveguide, and performing interference frequency mixing on the space signal light and the local oscillator light to obtain a group of output optical signals with phase difference of 180 degrees;
the active waveguide balance detector is specifically a waveguide balance detector array and is used for receiving the output optical signals and obtaining a group of differential photocurrent signals through photoelectric conversion;
the integrated grating array, the multimode interference coupler array and the waveguide balance detector array are sequentially connected through a silicon-based waveguide.
3. The waveguide balanced detector-based receiving device according to claim 2, wherein the array size of the integrated grating array, the multi-mode interference coupler array and the waveguide balanced detector array is larger than 2 × 2.
4. The waveguide balanced detector-based receiving device according to claim 2, wherein the integrated grating array comprises a plurality of coupling gratings, the number of the coupling gratings is the same as that of the multimode interference couplers in the multimode interference coupler array, and the coupling gratings are connected with the multimode interference couplers in a one-to-one correspondence manner through silicon-based waveguides.
5. The waveguide balanced detector-based receiving device according to claim 2, wherein the balanced detector array comprises a plurality of sige waveguide balanced detectors, the number of the sige waveguide balanced detectors is the same as that of the multimode interference couplers in the multimode interference coupler array, and the sige waveguide balanced detectors are connected with the multimode interference couplers in a one-to-one correspondence through silicon-based waveguides.
6. The waveguide balanced detector-based receiving device according to claim 1, wherein the readout circuit chip comprises:
a transimpedance amplifier: the differential photoelectric current signal is amplified into a voltage signal through low noise;
an analog-to-digital converter: for converting the voltage signal into a digital signal;
an output drive circuit: the interface level is used for carrying out signal output corresponding to the digital signal; and
a time division multiplexing circuit; and the enabling end of the trans-impedance amplifier is connected and is used for carrying out gating control through a time sequence to realize signal reading.
7. The receiving apparatus of claim 6, wherein the transimpedance amplifier is a differential low-noise high-bandwidth transimpedance amplifier, and an input of the transimpedance amplifier is connected to an output of the waveguide balanced detector array through a through silicon via.
8. The waveguide balanced detector-based receiving device according to claim 6, wherein the integrated grating array, the multi-mode interference coupler array and the waveguide balanced detector array of the integrated silicon optical chip are integrated by silicon optical technology; the transimpedance amplifier, the analog-to-digital converter, the output driving circuit and the time division multiplexing circuit of the readout circuit chip are integrated by adopting a CMOS (complementary metal oxide semiconductor) process.
9. A method for integrating a receiving device based on a waveguide balanced probe according to any of claims 1 to 8, characterized in that it comprises the following steps:
adopting a GeSi silicon optical process to integrate a passive silicon optical device and an active waveguide balance detector to obtain an integrated silicon optical chip; adopting CMOS process integration to obtain a read-out circuit chip;
and the integrated silicon optical chip and the readout circuit chip are interconnected and integrated in a three-dimensional stacking mode through silicon through holes.
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