CN111490115B - 堆叠状的多结太阳能电池 - Google Patents

堆叠状的多结太阳能电池 Download PDF

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CN111490115B
CN111490115B CN202010074133.9A CN202010074133A CN111490115B CN 111490115 B CN111490115 B CN 111490115B CN 202010074133 A CN202010074133 A CN 202010074133A CN 111490115 B CN111490115 B CN 111490115B
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M·莫伊泽尔
R·范莱斯特
A·贝格
L·霍斯特
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Abstract

一种堆叠状的多结太阳能电池，其具有：第一子电池和第二子电池，第一子电池具有上侧和下侧，其中，第一子电池构造成最以上的子电池，使得入射光首先照射到第一子电池的上侧，然后通过下侧照射到第二子电池上；第一隧道二极管，其布置在第一子电池的下侧和第二子电池之间；窗口层，其中，窗口层布置在第一子电池的所述上侧上，并且窗口层的带隙大于第一子电池的带隙；彼此间隔开的至少两个金属指，其中，在金属指以下和窗口层以上布置有覆盖层，其中，在覆盖层以下和窗口层以上布置有附加层，并且附加层的厚度小于窗口层的厚度，且附加层的带隙低于窗口层的带隙。

Description

堆叠状的多结太阳能电池
技术领域
本发明涉及一种堆叠状的多结太阳能电池。
背景技术
由DE 10 2013 209 217 A1公开一种具有多个子电池的多结太阳能电池。在最上方的子电池上布置有窗口层和用于构造正侧接通部的多个金属指(Metallfinger)和多个抗反射层。
由Smith B.L等人的《InAlAs photovoltaic cell design for high deviceefficiency》，光伏进展：研究与应用，25，2017年，第706-713页已知一种多结太阳能电池，该多结太阳能电池具有InAlAs顶单元，接下来是窗口层、InP蚀刻停止层和InGaAs接通层。
发明内容
在此背景下，本发明的任务在于说明一种改进现有技术的设备。
该任务通过具有根据本发明的特征的堆叠状的多结太阳能电池来解决。本发明的有利构型是优选的实施方式。
根据本发明的主题，提供一种堆叠状的多结太阳能电池，其具有具有上侧和下侧的第一子电池并且具有第二子电池。
第一子电池构造成最上方的子电池，使得入射光首先照射到第一子电池的上侧上，并且然后通过下层照射到第二子电池上。
在第一子电池的下侧与第二子电池之间布置有第一隧道二极管。
具有窗口层，其中，窗口层布置在第一子电池的上侧上，并且窗口层的带隙大于第一子电池的带隙。
彼此间隔开的至少两个金属指，其中，在金属指以下并且在窗口层以上布置有覆盖层。
在覆盖层以下并且在窗口层以上布置有附加层。
附加层的厚度小于窗口层的厚度，并且附加层的带隙小于窗口层的带隙。
可以理解，通过窗口层对表面进行条件处理(konditionieren)，或者换句话说，表面被钝化，以由此减少边界面的复合损耗并改善多结太阳能电池的效率。
应注意，尤其在金属指之间(即光照射到子电池上的该区域)，窗口层的吸收损耗非常低或者尽可能地为零。为此，相比于第一子电池的材料，窗口层的材料具有更大的带隙、即更小的晶格常数。
此外值得期望的是，在金属指之间尽可能完全地移除覆盖层，以便避免附加的吸收损耗。另一方面同样必要的是，不减少窗口层的厚度，以便不降低第一子电池的表面的钝化。
优选地，能够借助湿法化学蚀刻方法(nasschemische
Figure GDA0004235081890000022
)来执行移除金属指之间的覆盖层。
在制造多结太阳能电池期间在窗口层和覆盖层之间整面地构造附加层的优点是，在使用湿法化学回蚀(nasschemisch
Figure GDA0004235081890000023
)的情况下，在接通指(Kontaktfinger)之间材料锁合地支承在窗口层上的附加层用作蚀刻停止层，或用作在对覆盖层进行蚀刻时的牺牲层(Opferschicht)。
与窗口层的蚀刻率相比并且与覆盖层的蚀刻率相比，附加层仅具有非常低的蚀刻率，通过该方式能够延长用于移除覆盖层的蚀刻时间，并且可以比以前更可靠地移除金属指之间的覆盖层，并且同时可以抑制窗口层上的蚀刻侵蚀
Figure GDA0004235081890000024
可以理解，在一种扩展方案中，在金属指之间完全或至少部分地缺失覆盖层。
附加层具有非常低的蚀刻率，通过此方式附加层能够构造成比窗口层的厚度薄得多，并且尤其比覆盖层薄得多。
在此可以理解，为了抑制附加的吸收损耗，将附加层的厚度实施得尽可能的小并且优选仅实施得如此厚，以构造可靠的蚀刻停止并且保护支承在其以下的窗口层免受蚀刻侵蚀。
在一种扩展方案中，缺失金属指之间的附加层，或金属指之间的附加层的厚度优选小于金属指以下的附加层的厚度。换句话说，在移除附加层的范畴中过蚀刻
Figure GDA0004235081890000021
的情况下同样完全地移除附加层，然而不会侵蚀窗口层。
附加层和窗口层优选具有相同的元素，然而具有不同的化学计量。
在一种实施方式中，附加层的晶格常数大于窗口层的晶格常数。此外，窗口层的晶格常数小于第一子电池的晶格常数。
在另一扩展方案中，窗口层和附加层分别包括至少具有元素In、Al、P的化合物，或窗口层和附加层由InAlP组成。
相比于窗口层，附加层具有更高的In比例。优选地，与窗口层相比，附加层具有较低的Al浓度。例如附加层由In68Al32P组成。窗口层优选由In58Al42P组成。
研究已经表明，在InAlP化合物的情况下的蚀刻率随Al含量的增加而成比例地上升，其中，相比于Al含量大于50％的情况，借助由柠檬酸、过氧化氢和水构成的混合物对Al含量低于40％的InAlP化合物仅非常慢地进行蚀刻。
在另一扩展方案中，附加层包括至少具有元素In、P的化合物，或者附加层由InP组成。
在一种实施方式中，覆盖层包括至少具有元素Ga、As或至少具有元素In、Ga、As的化合物，或覆盖层由GaAs或InGaAs组成。
在一种扩展方案中，覆盖层的厚度处于30nm和1μm之间的范围内，或者覆盖层的厚度处于120nm和700nm之间的范围内，或者覆盖层的厚度在集中器应用的应用的情况下约为150nm或在太空中的应用的情况下约为500nm。
可以理解，覆盖层具有高电导率。
在一种实施方式中，覆盖层包括GaAs化合物，或由GaAs化合物组成。
在另一扩展方案中，与窗口层相比，附加层相对于由柠檬酸、过氧化氢和水组成的蚀刻溶液具有较低的湿法化学蚀刻率。优点是，借助湿法化学选择性改善在制造多结太阳能电池时的可靠性。
附加层优选具有比窗口层小因子5、或因子10、或因子100的蚀刻率。
在另一扩展方案中，附加层具有0.1nm和5nm之间的范围内的厚度，或具有0.5nm和1.2nm之间范围内的厚度。附加层的厚度优选恰好为0.7nm。
在一种实施方式中，窗口层具有10nm和25nm之间的范围内的厚度，或窗口层的厚度位于14nm和20nm之间的范围内，或者窗口层的厚度位于15nm和17nm之间的范围内，或窗口层的厚度为15nm。
在一种扩展方案中，覆盖层和窗口层以及附加层具有借助掺杂剂Si和/或Te的n掺杂，其中，掺杂剂的浓度大于5*E17N/cm3且小于5*E19N/cm3。
应注意，当前的多结太阳能电池要么仅仅具有由III-V族材料构成的子电池，和/或最下面的子电池构造为Ge子电池。此外应注意，多结太阳能电池不仅单片地构造，其中，各个子电池彼此晶格匹配，而且具有一个或多个半导体键合(Halbleiterbond)。
优选地，多结太阳能电池在具有最小带间距的最下面的子电池与紧邻的子电池之间具有变质缓冲区(metamorph Puffer)。可以理解，相比于最下面的子电池，紧邻的子电池具有更大的带间距。
此外，多结太阳能电池能够以正置生长(aufrecht gewachsen)的形式构造为所谓的UMM多结太阳能电池，而且能够以倒置生长(umgekehrt gewachsen)的多结太阳能电池的形式，即构造为IMM多结太阳能电池。
在一种实施方式中，第一子电池包括至少具有元素In、P或元素In、Ga、P或元素Al、Ga、In、P的化合物，或者第一子电池由InP或InAlP或InGaP或AlGaInP组成。
应注意，第一子电池中的以上提到的化合物分别构造发射极的部分或基极的部分，或构造成既用于发射极也用于基极。
在另一扩展方案中，多结太阳能电池包括第三子电池和第四子电池，其中，在两个彼此相继的子电池之间分别总是构造有其他隧道二极管。多结太阳能电池优选地具有恰好四个子电池。
尤其在四结电池的情况下，第一子电池构造成AlInGaP子电池，第二子电池构造成AlInGaAs子电池，第三子电池构造成InGaAs子电池，第四子电池构造成Ge子电池。
在另一扩展方案中，多结太阳能电池包括第三子电池、第四子电池和第五子电池。多结太阳能电池优选具有恰好五个子电池。
尤其地，第一子电池构造成AlInGaP子电池，第二子电池构造成InGaP子电池，第三子电池构造成AlInGaAs子电池，第四子电池构造成InGaAs子电池，第五子电池构造成Ge子电池。
可以理解，在两个彼此相继的子电池之间分别构造有隧道二极管。
在一种实施方式中，多结太阳能电池构造成正置单片的多结太阳能电池。
在一种扩展方案中，在多结太阳能电池的情况下在两个子电池之间构造有半导体镜。安装半导体镜的一个优点是，在太空中的应用时辐射硬度会增加并且由此提高最终效率(EOL)。半导体镜优选安装在InGaAs子电池以下并且在Ge子电池以上。
在一种扩展方案中，在多结太阳能电池的情况下在两个彼此紧邻的子电池之间构造有变质缓冲区。可以理解，能够同时安装变质缓冲区和半导体镜。
附图说明
以下参照附图更详细地阐述本发明。在此，相同类型的部件用相同的标记标注。所示出的实施方式是极其示意性的，即间距以及横向和竖直的延展不是成比例的——并且只要未另外说明——彼此之间不具有任何可推导的几何关系。附图示出：
图1示出根据本发明的多结太阳能电池的第一实施方式的截面图；
图2示出根据本发明的多结太阳能电池的第二实施方式的截面图；
图3示出根据本发明的多结太阳能电池的第三实施方式的截面图；
具体实施方式
图1的图示出第一实施方式的视图，其具有多结太阳能电池MS，该多结太阳能电池具有第一子电池TZ1和第二子电池TZ2，其中，第一子电池TZ1构造成最上方的子电池。第一子电池TZ1具有上侧和下侧。
入射光L首先照射到第一子电池TZ1的上侧上，并且然后在下侧射出并且照射到第二子电池TZ2上。
在第一子电池TZ1的下侧和第二子电池TZ2之间布置有第一隧道二极管TD。在第二子电池TZ2以下，金属层M2与第二子电池TZ2的下侧整面地材料锁合地连接。
在第一子电池TZ1的上侧上布置有具有窗口层FS1的窗口层。在窗口层FS1以上布置有两个彼此间隔开的金属指M1。
在金属指M1以下，在窗口层FS1上构造有附加层FS2。附加层FS2具有与窗口层FS1不同的化学计量。在第二窗口层FS2以上、但在金属指M1以下布置有覆盖层AB。
在未示出的另一实施方式中，在第一窗口层FS1上在金属指M1之间构造有小厚度的至少一个第二窗口层FS2，其中，该附加层FS2的厚度小于金属指M1以下的附加层FS2的厚度。
在图2的图中示出根据本发明的多结太阳能电池MS的第二实施方式的截面图。下面仅阐述与图1中的图的不同之处。
第一子电池TZ1包括AlInGaP或由AlInGaP组成。第二子电池TZ2包括AlInGaAs或由AlInGaAs组成。在第二子电池TZ2以下布置有第三子电池TZ3。第三子电池TZ3包括InGaAs或由InGaAs组成。在第二子电池TZ2和第三子电池TZ3之间布置有另一隧道二极管TD。
在第三子电池TZ3以下布置有第四子电池TZ4。第四子电池TZ4包括Ge或由Ge组成。在第三子电池TZ3和第四子电池TZ4之间布置有其他隧道二极管TD。
可选地，在其他隧道二极管TD和第三子电池TZ3之间布置有半导体镜HASP，以便提高对于太空应用的辐射硬度。在此可以理解，对于陆地应用，省去半导体镜HASP。
在另一实施方式中，在第三子电池TZ3和第四子电池TZ4之间布置有变质缓冲区MP，其中，其他隧道二极管要么布置在变形缓冲区MP和第三子电池TZ3之间，要么布置在变形缓冲区MP和第四子电池TZ4之间。
替代金属层M2布置在第二子电池TZ2以下，金属层M2布置在第四子电池TZ4以下，并且与第四子电池TZ4的下侧整面地材料锁合地连接。
在图3的图中示出根据本发明的多结太阳能电池MS的第三实施方式的截面图。下面仅说明与图2中的图的不同之处。
第一子电池TZ1包括AlInGaP或由AlInGaP组成。第二子电池TZ2包括GaInP或由GaInP组成。第三子电池TZ3包括AlInGaAs或由AlInGaAs组成。
第四子电池TZ4包括InGaAs或由InGaAs组成。在第四子电池TZ4以下布置有第五子电池TZ5。第五子电池TZ5包括Ge或由Ge组成。
在第四子电池TZ4和第五子电池TZ5之间布置有其他隧道二极管TD。
可选地，在其他隧道二极管TD和第四子电池TZ4之间布置有半导体镜HASP，以便提高对于太空应用的辐射硬度。
在另一实施方式中，在第四子电池TZ4与第五子电池TZ5之间布置有变质缓冲区MP，其中，其他隧道二极管TD要么布置在变形缓冲区MP和第四子电池TZ4之间，要么布置在变形缓冲区MP和第五子电池TZ5之间。
金属层M2布置在第五子电池TZ5以下，并且与第五子电池TZ5的下侧整面地材料锁合地连接。

Claims (17)

1.一种堆叠状的多结太阳能电池(MS)，其具有
第一子电池(TZ1)和第二子电池(TZ2)，所述第一子电池具有上侧和下侧，其中，所述第一子电池(TZ1)构造成最上方的子电池，从而入射光(L)首先照射到所述第一子电池(TZ1)的上侧上并且然后通过所述下侧照射到所述第二子电池(TZ2)上，
第一隧道二极管(TD1)，所述第一隧道二极管布置在所述第一子电池(TZ1)的下侧和所述第二子电池(TZ2)之间，
窗口层(FS1)，其中，所述窗口层布置在所述第一子电池(TZ1)的上侧上，并且所述窗口层(FS1)的带隙大于所述第一子电池(TZ1)的带隙，
彼此间隔开的至少两个金属指(M1)，其中，在所述金属指(M1)以下并且在所述窗口层(FS1)以上布置有覆盖层(AB)，
在所述覆盖层(AB)以下并且在所述窗口层(FS1)以上布置有附加层(FS2)，其中，
所述附加层(FS2)的厚度小于所述窗口层(FS1)的厚度，并且所述附加层(FS2)的带隙小于所述窗口层(FS1)的带隙，
所述窗口层(FS1)和所述附加层(FS2)具有相同的元素，
其特征在于，
所述金属指(M1)之间的所述附加层(FS2)的厚度小于所述金属指(M1)以下的所述附加层(FS2)的厚度，
所述窗口层(FS1)和所述附加层(FS2)分别包括至少具有元素In、Al、P的化合物或由InAlP组成，并且相比于所述窗口层(FS1)，所述附加层(FS2)具有更高的In浓度和更低的Al浓度。
2.根据权利要求1所述的堆叠状的多结太阳能电池(MS)，其特征在于，所述附加层(FS2)的晶格常数大于所述窗口层(FS1)的晶格常数，并且所述窗口层(FS1)的晶格常数小于所述第一子电池(TZ1)的晶格常数。
3.根据权利要求1或2所述的堆叠状的多结太阳能电池(MS)，其特征在于，所述附加层(FS2)包括至少具有元素In、P的化合物或由InP组成。
4.根据权利要求1或2所述的堆叠状的多结太阳能电池(MS)，其特征在于，在所述金属指(M1)之间完全地或至少部分地缺失所述覆盖层(AB)。
5.根据权利要求1或2所述的堆叠状的多结太阳能电池(MS)，其特征在于，所述覆盖层(AB)包括至少具有元素Ga、As的化合物或至少具有元素In、Ga、As的化合物，或所述覆盖层(AB)由GaAs或InGaAs组成。
6.根据权利要求1或2所述的堆叠状的多结太阳能电池(MS)，其特征在于，所述覆盖层(AB)的厚度位于30nm与1μm之间的范围内，或者所述覆盖层(AB)的厚度位于250nm与500nm之间的范围内，或者所述覆盖层(AB)的厚度为300nm。
7.根据权利要求1或2所述的堆叠状的多结太阳能电池(MS)，其特征在于，与所述窗口层(FS1)相比，所述附加层(FS2)相对于由柠檬酸、过氧化氢和水组成的蚀刻溶液具有较低的湿法化学蚀刻率。
8.根据权利要求1或2所述的堆叠状的多结太阳能电池(MS)，其特征在于，所述附加层(FS2)具有厚度，并且所述附加层(FS2)的厚度位于0.1nm与5nm之间的范围内，或所述附加层(FS2)的厚度位于0.5nm与1.2nm之间的范围内，或所述附加层(FS2)的厚度恰好为0.7nm。
9.根据权利要求1或2所述的堆叠状的多结太阳能电池(MS)，其特征在于，所述窗口层(FS1)具有厚度，并且所述窗口层(FS1)的厚度位于10nm与25nm之间的范围内，或所述窗口层(FS1)的厚度位于14nm与20nm之间的范围内，或者所述窗口层(FS1)的厚度位于15nm与17nm之间的范围内，或所述窗口层(FS1)的厚度为15nm。
10.根据权利要求1或2所述的堆叠状的多结太阳能电池(MS)，其特征在于，所述第一子电池(TZ1)具有由元素In、P或元素In、Ga、P组成的化合物，或所述第一子电池(TZ1)由InP、或InAlP、或InGaP、或AlGaInP组成。
11.根据权利要求1或2所述的堆叠状的多结太阳能电池(MS)，其特征在于，所述附加层(FS2)中的In比例高于所述窗口层(FS1)中的In比例。
12.根据权利要求1或2所述的堆叠状的多结太阳能电池(MS)，其特征在于，所述覆盖层(AB)和所述窗口层(FS1)以及所述附加层(FS2)具有以掺杂剂Si和/或Te的n掺杂，并且所述掺杂剂的浓度大于5*E17N/cm3且小于5*E19N/cm3。
13.根据权利要求1或2所述的堆叠状的多结太阳能电池(MS)，其特征在于，所述多结太阳能电池(MS)具有第三子电池(TZ3)和第四子电池(TZ4)，或具有恰好四个子电池(TZ1，TZ2，TZ3，TZ4)，其中，在两个彼此相继的子电池(TZ2，TZ3，TZ4)之间分别总是构造有其他隧道二极管(TD)。
14.根据权利要求1或2所述的堆叠状的多结太阳能电池(MS)，其特征在于，所述多结太阳能电池(MS)包括五个子电池(TZ1，TZ2，TZ3，TZ4，TZ5)或恰好由五个子电池(TZ1，TZ2，TZ3，TZ4，TZ5)组成，其中，在两个彼此相继的子电池(TZ2，TZ3，TZ4，TZ5)之间分别构造有其他隧道二极管(TD)。
15.根据权利要求1或2所述的堆叠状的多结太阳能电池(MS)，其特征在于，所述多结太阳能电池(MS)构造成单片的多结太阳能电池(MS)。
16.根据权利要求1或2所述的堆叠状的多结太阳能电池(MS)，其特征在于，所述多结太阳能电池(MS)在两个子电池(TZ1，TZ2，TZ3，TZ4，TZ5)之间具有半导体镜(HASP)。
17.根据权利要求1或2所述的堆叠状的多结太阳能电池(MS)，其特征在于，所述多结太阳能电池(MS)在两个子电池之间具有变质缓冲区。
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