CN111479654B - Substrate processing system, substrate processing method, and computer storage medium - Google Patents
Substrate processing system, substrate processing method, and computer storage medium Download PDFInfo
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- CN111479654B CN111479654B CN201880080582.5A CN201880080582A CN111479654B CN 111479654 B CN111479654 B CN 111479654B CN 201880080582 A CN201880080582 A CN 201880080582A CN 111479654 B CN111479654 B CN 111479654B
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- 239000000758 substrate Substances 0.000 title claims abstract description 156
- 238000012545 processing Methods 0.000 title claims abstract description 146
- 238000003672 processing method Methods 0.000 title claims description 17
- 238000003860 storage Methods 0.000 title claims description 7
- 230000001681 protective effect Effects 0.000 claims abstract description 146
- 238000000034 method Methods 0.000 claims abstract description 97
- 230000001012 protector Effects 0.000 claims abstract description 43
- 238000005259 measurement Methods 0.000 claims abstract description 32
- 235000012431 wafers Nutrition 0.000 description 253
- 238000004140 cleaning Methods 0.000 description 25
- 238000012546 transfer Methods 0.000 description 21
- 238000012805 post-processing Methods 0.000 description 13
- 230000032258 transport Effects 0.000 description 10
- 238000004364 calculation method Methods 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 239000006061 abrasive grain Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/04—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor involving a rotary work-table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
A substrate processing system for processing a processing surface of a substrate having a protective member provided on a non-processing surface thereof, the substrate processing system comprising: a grinding section that grinds the processing surface of the substrate in a plurality of steps; a protector thickness measuring portion that measures a thickness of the protector before the grinding portion grinds the processing surface of the substrate; and a control unit that calculates a1 st grinding amount in the 1 st grinding process step based on the protector thickness measured by the protector thickness measurement unit such that a2 nd grinding amount in a2 nd grinding process step after the 1 st grinding process step of grinding the processing surface of the substrate by the grinding unit is constant among the substrates.
Description
Technical Field
(cross-reference to related applications)
The present application claims priority based on japanese patent application No. 2017-246732 filed in japan on 12/22/2017, the contents of which are incorporated herein by reference.
The present invention relates to a substrate processing system for processing a processing surface of a substrate having a protective member provided on a non-processing surface thereof, a substrate processing method using the substrate processing system, and a computer storage medium.
Background
In recent years, in a manufacturing process of a semiconductor device, a semiconductor wafer (hereinafter, referred to as a wafer) having a plurality of devices such as electronic circuits formed on a front surface thereof is subjected to a process of grinding a back surface of the wafer to thin the wafer. Further, as described in patent documents 1 and 2, for example, a protective tape is provided as a protective member for protecting a device on the surface of the wafer before grinding.
The grinding of the back surface of the wafer is performed using, for example, a grinding apparatus described in patent document 1 or patent document 2. The grinding apparatus includes, for example, a chuck rotatably holding a front surface of a wafer, and a grinding wheel having a ring shape and configured to be rotatable, the grinding wheel including a grindstone for grinding a back surface of the wafer held by the chuck. In the grinding apparatus, rough grinding and finish grinding are sequentially performed on the back surface of the wafer. Specifically, in each grinding step, the back surface of the wafer is ground by bringing a grindstone into contact with the back surface of the wafer while rotating a chuck (wafer) and a grindstone (grindstone). Further, in this grinding process, the thickness of the wafer is measured by a thickness gauge, thereby finishing the wafer to a target thickness.
Further, for example, patent document 2 describes: the thickness gauge is a contact gauge, and includes a reference side vernier height gauge and a wafer side vernier height gauge, and measures the thickness of the wafer based on a value obtained by subtracting the measurement value of the reference side vernier height gauge from the measurement value of the wafer side vernier height gauge. In this case, since the protective tape is pasted to the surface of the wafer, the thickness of the wafer is calculated including the thickness of the protective tape.
Further, for example, patent document 2 describes: a non-contact type fine grinding thickness measuring device is used in the fine grinding. The fine grinding thickness measuring device is provided with a plurality of thickness sensors and carries out multipoint measurement on the thickness of the wafer. In this case, the thickness of a single wafer without a protective tape is measured.
Documents of the prior art
Patent document
Patent document 2 Japanese laid-open patent publication No. 2008-264913
Disclosure of Invention
Problems to be solved by the invention
However, sometimes the thickness of the protective tape is not uniform from wafer to wafer. In this case, as described above, when the entire thickness of the wafer and the protective tape is measured by the contact thickness measuring instrument in the rough grinding and the thickness of the wafer is measured by the non-contact thickness measuring instrument in the finish grinding, the grinding amounts in the rough grinding and the finish grinding are not uniform between the wafers.
When grinding is performed while measuring the entire thickness including the thickness of the wafer and the thickness of the protective tape by using a contact thickness measuring instrument, if the thickness of the protective tape differs between the wafers, the thickness of each wafer after grinding also differs. Then, in order to grind wafers having different wafer thicknesses into wafers having the same thickness, the grinding amount in grinding thereafter varies from wafer to wafer.
Such inconsistency in the grinding amount is undesirable. Particularly in finish grinding, in order to grind a wafer to a final processing thickness, the grinding amount thereof needs to be strictly controlled, and the grinding amount needs to be constant regardless of the thickness of the protective tape.
The present invention has been made in view of the above circumstances, and an object thereof is to properly grind substrates with a constant grinding amount between the substrates when grinding and processing a processing surface of a substrate having a protective member provided on a non-processing surface.
Means for solving the problems
A substrate processing system according to an aspect of the present invention for solving the above-described problems, which processes a processing surface of a substrate having a protective member provided on a non-processing surface thereof, includes: a grinding section that grinds the processing surface of the substrate in a plurality of steps; a protector thickness measuring section that measures a thickness of the protector before the grinding section grinds the processing surface of the substrate; and a control unit that calculates a1 st grinding amount in the 1 st grinding process step based on the protector thickness measured by the protector thickness measurement unit such that a2 nd grinding amount in a2 nd grinding process step after the 1 st grinding process step of grinding the processing surface of the substrate by the grinding unit is constant among the substrates.
According to an aspect of the present invention, the thickness of the protector is measured before the grinding of the processing surface of the substrate, and the 1 st grinding amount in the 1 st grinding process step is calculated using the measurement result. In this way, the 1 st grinding amount is calculated in consideration of the thickness of the protector, and therefore, even if the thickness of the protector does not coincide among the respective substrates, the thickness of the substrate after being ground in the 1 st grinding treatment process can be made constant among the respective substrates. Then, the 2 nd grinding amount at the time of grinding the processing surface of the substrate in the 2 nd grinding treatment step can be made constant, and the substrate can be ground appropriately.
In accordance with another aspect of the present invention, there is provided a substrate processing method for processing a processing surface of a substrate having a protection member provided on a non-processing surface thereof, the substrate processing method including: a protector thickness measuring step of measuring a thickness of the protector; and a plurality of grinding processes for grinding the processing surface of the substrate after the protector thickness measuring process, wherein the 1 st grinding amount in the 1 st grinding process is calculated so that the 2 nd grinding amount in the 2 nd grinding process after the 1 st grinding process for grinding the processing surface of the substrate among the plurality of grinding processes is constant among the substrates, based on the protector thickness measured in the protector thickness measuring process.
In addition, according to another aspect of the present invention, there is provided a computer storage medium readable and storing a program for running on a computer that controls a control unit of a substrate processing system to execute the substrate processing method by the substrate processing system.
ADVANTAGEOUS EFFECTS OF INVENTION
According to one aspect of the present invention, when a processing surface of a substrate having a protector provided on a non-processing surface thereof is ground and processed, the substrate can be ground appropriately with a grinding amount between the substrates constant.
Drawings
Fig. 1 is a plan view schematically showing a schematic configuration of a substrate processing system according to the present embodiment.
Fig. 2 is a side view showing a schematic structure of a protective wafer.
Fig. 3 is a plan view schematically showing the structure of the processing apparatus.
FIG. 4 is a side view showing a schematic structure of a protective tape thickness measuring unit.
Fig. 5 is a side view showing a schematic structure of the entire thickness measuring unit.
Fig. 6 is a side view showing a schematic configuration of a wafer main body thickness measuring unit.
Fig. 7 is a flowchart showing the main steps of wafer processing.
Fig. 8 is an explanatory diagram showing a state where the processed surface of the wafer is ground.
Fig. 9 is an explanatory diagram showing the grinding amount in each grinding process of a protective wafer in which the thickness of the protective tape is different from the thickness of the wafer before the grinding process.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the present specification and the drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant description thereof is omitted.
< substrate processing System >
First, the structure of the substrate processing system according to the present embodiment will be described. Fig. 1 is a plan view schematically showing a schematic configuration of a substrate processing system 1. In the following, in order to clarify the positional relationship, an X-axis direction, a Y-axis direction, and a Z-axis direction orthogonal to each other are defined, and the positive Z-axis direction is set to be a vertically upward direction.
In the substrate processing system 1 of the present embodiment, the wafer W as a substrate is thinned. Hereinafter, as shown in fig. 2, the surface to be processed (ground) of the wafer W is referred to as "processed surface W1", and the surface opposite to the processed surface W1 is referred to as "non-processed surface W2". The wafer W is a semiconductor wafer such as a silicon wafer or a compound semiconductor wafer. The wafer W includes a wafer main body M as a substrate main body and devices D formed on a non-processing surface side of the wafer main body M. The surface of the wafer body M constitutes a processed surface W1, and the surface of the device D constitutes a non-processed surface W2 of the wafer W. A protective member, for example, a protective tape P for protecting the device D is bonded to the unprocessed surface W2 of the wafer W. In the following description, the entire wafer W to which the protective tape P is attached will be referred to as a protective wafer Wp.
As shown in fig. 1, a substrate processing system 1 has a structure in which the following devices are connected: a transfer station 2 for receiving the protection wafers Wp before processing in the cassette C and transferring the plurality of protection wafers Wp to the substrate processing system 1 from the outside in units of cassettes; a delivery station 3 for receiving the processed wafers W (the wafers W from which the protective tape P has been peeled off from the protective wafer Wp) in the cassette C and delivering the wafers W from the substrate processing system 1 to the outside in units of cassettes; a processing device 4 for processing and thinning the protective wafer Wp; a post-processing device 5 for performing post-processing of the processed protective wafer Wp; and a transfer station 6 for transferring the protective wafer Wp among the loading station 2, the processing apparatus 4, and the post-processing apparatus 5. The carry-in station 2, the transfer station 6, and the processing device 4 are arranged in the Y-axis direction in this order on the X-axis negative direction side. The delivery station 3 and the post-processing apparatus 5 are arranged in the X-axis positive direction in this order along the Y-axis direction.
The loading station 2 is provided with a cassette mounting table 10. In the illustrated example, a plurality of, for example, two cassettes C are mounted on the cassette mounting table 10 in a row in the X-axis direction.
The outbound station 3 also has the same configuration as the inbound station 2. The delivery station 3 is provided with a cassette mounting table 20, and two cassettes C are mounted on the cassette mounting table 20 in a row in the X-axis direction. The carrying-in station 2 and the carrying-out station 3 may be combined into one carrying-in and carrying-out station, and in this case, a common cassette mounting table may be provided in the carrying-in and carrying-out station.
In the processing apparatus 4, the protective wafer Wp is subjected to processing such as grinding and cleaning. The structure of the processing apparatus 4 will be described later.
The post-processing apparatus 5 performs post-processing on the protective wafer Wp processed by the processing apparatus 4. As the post-processing, for example, an assembly processing of holding the protective wafer Wp on the dicing frame via the dicing tape, a separation processing of separating the protective tape P joined to the wafer W in the protective wafer Wp, and the like are performed. Then, the post-processing apparatus 5 conveys the wafer W, which is post-processed and held by the dicing frame, to the cassette C of the delivery station 3. A known apparatus is used for the mounting process and the peeling process performed by the post-processing apparatus 5.
The transfer station 6 is provided with a wafer transfer area 30. The wafer transfer area 30 is provided with a wafer transfer device 32 that is movable on a transfer path 31 extending in the X-axis direction. The wafer transfer device 32 includes a transfer fork 33 and a transfer tray 34 as a wafer holding portion for holding the protection wafer Wp. The two conveyance forks 33 are branched at the top ends thereof to suck and hold the protection wafer Wp. The transport fork 33 transports the protective wafer Wp before the grinding process. The transfer tray 34 has a circular shape having a diameter longer than the diameter of the protective wafer Wp in plan view, and is configured to hold the protective wafer Wp by suction. The conveyance tray 34 conveys the protection wafer Wp after the grinding process. The transport fork 33 and the transport tray 34 are configured to be movable in the horizontal direction, in the vertical direction, about the horizontal axis, and about the vertical axis, respectively.
As shown in fig. 1, the substrate processing system 1 is provided with a control unit 40. The control unit 40 is, for example, a computer and has a program storage unit (not shown). The program storage unit stores a program for controlling the substrate processing system 1 to process the protective wafer Wp (wafer W). Further, the program storage unit also stores a program for controlling the operation of the drive systems of the various processing apparatuses, the transport apparatus, and the like described above to realize the wafer processing of the substrate processing system 1, which will be described later. The program may be stored in a computer-readable storage medium H such as a computer-readable Hard Disk (HD), a Flexible Disk (FD), a Compact Disk (CD), a magneto-optical disk (MO), or a memory card, and loaded from the storage medium H to the control unit 40.
< machining device >
Next, the structure of the processing apparatus 4 will be described. As shown in fig. 3 to 6, the processing apparatus 4 includes a rotary table 100, a conveying unit 110, an adjusting unit 120, a1 st cleaning unit 130, a2 nd cleaning unit 140, a rough grinding unit 150 as a grinding portion, a middle grinding unit 160 as a grinding portion, a finish grinding unit 170 as a grinding portion, a protective tape thickness measuring unit 180 as a protective member thickness measuring portion, an entire thickness measuring unit 190 as an entire thickness measuring portion, and a wafer main body thickness measuring unit 200 as a substrate main body thickness measuring portion. In the present embodiment, the rough grinding unit 150 corresponds to the 1 st grinding unit in the present invention, and the middle grinding unit 160 and the finish grinding unit 170 correspond to the 2 nd grinding unit in the present invention, respectively.
The rotary table 100 is configured to be rotatable by a rotation mechanism (not shown). The turntable 100 is provided with four chucks 101 for holding the protection wafer Wp by suction. The chucks 101 are arranged equally, i.e., at intervals of 90 degrees, on the same circumference as the rotary table 100. The four chucks 101 can be moved to the delivery position a0 and the machining positions a1 to A3 by being rotated by the rotary table 100.
In the present embodiment, the delivery position a0 is a position on the X-axis positive direction side and the Y-axis negative direction side of the turntable 100, and the 2 nd cleaning unit 140, the adjustment unit 120, and the 1 st cleaning unit 130 are arranged in line on the Y-axis negative direction side of the delivery position a 0. The conditioning unit 120 and the 1 st cleaning unit 130 are stacked in this order from above. The 1 st processing position a1 is a position on the X-axis positive direction side and the Y-axis positive direction side of the rotary table 100, and the rough grinding unit 150 is disposed at the 1 st processing position a 1. The 2 nd processing position a2 is a position on the X-axis negative direction side and the Y-axis positive direction side of the turntable 100, and the middle grinding unit 160 is disposed at the 2 nd processing position a 2. The 3 rd processing position A3 is a position on the X-axis negative direction side and the Y-axis negative direction side of the turntable 100, and the finish grinding unit 170 is disposed at the 3 rd processing position A3.
The chuck 101 is held by a chuck base 102. The chuck 101 and the chuck base 102 are configured to be rotatable by a rotation mechanism (not shown).
The conveying unit 110 is an articulated robot having a plurality of, for example, three arms 111 to 113. The three arms 111 to 113 are connected by a joint (not shown), and the 1 st arm 111 and the 2 nd arm 112 are each configured to be rotatable about a base end portion by the joint. Among the three arms 111 to 113, the 1 st arm 111 located at the top end is mounted with a transfer tray 114 for suction-holding the protection wafer Wp. Further, the 3 rd arm 113 positioned at the base end among the three arms 111 to 113 is attached to a vertical movement mechanism 115 for moving the arms 111 to 113 in the vertical direction. The transport unit 110 having this configuration can transport the protection wafer Wp to the delivery position a0, the adjustment unit 120, the 1 st cleaning unit 130, and the 2 nd cleaning unit 140.
In the adjustment unit 120, the orientation of the protective wafer Wp before the grinding process in the horizontal direction is adjusted. For example, the position of the notch portion of the wafer W is detected by a detection unit (not shown) while the protective wafer Wp held by the spin chuck (not shown) is rotated, and the orientation of the protective wafer Wp in the horizontal direction is adjusted by adjusting the position of the notch portion.
The 1 st cleaning unit 130 cleans, more specifically, performs spin cleaning of the processed surface W1 of the wafer W after the grinding process. For example, while the protective wafer Wp (wafer W) held by a spin chuck (not shown) is rotated, a cleaning liquid is supplied from a cleaning liquid nozzle (not shown) to the processing surface W1 of the wafer W. Then, the supplied cleaning liquid spreads over the processed surface W1, and cleans the processed surface W1.
The No. 2 cleaning unit 140 cleans the non-processed surface W2 of the wafer W in a state where the protective wafer Wp after the grinding processing is held on the conveyance tray 114, in other words, the protective tape P joined to the non-processed surface W2, and also cleans the conveyance tray 114.
In the rough grinding unit 150, the processing surface W1 of the wafer W is rough ground. The rough grinding unit 150 includes a rough grinding portion 151, and the rough grinding portion 151 includes a ring-shaped rough grinder (not shown) that is rotatable. The rough grinding unit 151 is configured to be movable in the vertical direction and the horizontal direction along the support column 152. Then, the chuck 101 and the rough grinding tool are rotated while the processed surface W1 of the wafer W held by the chuck 101 is brought into contact with the rough grinding tool, thereby roughly grinding the processed surface W1 of the wafer W.
The middle grinding unit 160 performs middle grinding on the processing surface W1 of the wafer W. The middle grinding unit 160 has a middle grinding portion 161, and the middle grinding portion 16 includes a middle grinder (not shown) having an annular shape and being rotatable. The middle grinding portion 161 is configured to be movable in the vertical direction and the horizontal direction along the support column 162. In addition, the grain size of the abrasive grains of the medium grinding tool is smaller than that of the abrasive grains of the rough grinding tool. Then, the chuck 101 and the middle grinder are rotated while the processing surface W1 of the wafer W held by the chuck 101 is in contact with the middle grinder, and the processing surface W1 is ground.
The finish grinding unit 170 finish-grinds the processing surface W1 of the wafer W. The finish grinding unit 170 includes a finish grinding portion 171, and the finish grinding portion 171 includes a finish grinding wheel (not shown) having an annular shape and being rotatable. The finish grinding portion 171 is configured to be movable in the vertical direction and the horizontal direction along the support column 172. In addition, the grain size of the abrasive grains of the fine grindstone is smaller than that of the abrasive grains of the medium grindstone. Then, in a state where the processing surface W1 of the wafer W held by the chuck 101 is brought into contact with the finish grinding tool, the chuck 101 and the finish grinding tool are rotated to finish grind the processing surface W1.
As shown in fig. 1 and 3, the guard band thickness measuring unit 180 is provided above the adjusting unit 120, for example. As shown in fig. 4, in the protective tape thickness measuring unit 180, the thickness of the protective tape P is measured for the protective wafer Wp held on the conveyance tray 114 of the conveyance unit 110. The protective tape thickness measuring unit 180 measures the thickness of the protective tape P protecting the wafer Wp during conveyance from the adjusting unit 120 to the delivery position a 0.
The protective tape thickness measuring unit 180 has a sensor 181 and a calculating section 182. The sensor 181 uses a sensor that measures the thickness of the protective tape P without contacting the protective tape P, for example, a white light confocal (confocal) type optical system sensor. The sensor 181 irradiates the protective tape P with light having a predetermined wavelength band, and receives reflected light reflected from the front surface P1 of the protective tape P and reflected light reflected from the rear surface P2 of the protective tape P. The calculation section 182 calculates the thickness of the protective tape P based on the two reflected lights received by the sensor 181.
In the present embodiment, the sensor 181 of the protective tape thickness measurement unit 180 is a white confocal optical system sensor, but the configuration of the protective tape thickness measurement unit 180 is not limited thereto, and any measuring instrument may be used as long as it is a device that measures the thickness of the protective tape P. Further, a plurality of sensors 181 may be provided.
The entire thickness measuring unit 190 is provided in the rough grinding unit 150 and the middle grinding unit 160, respectively. As shown in fig. 5, the entire thickness measuring unit 190 includes a chuck-side vernier height gauge 191, a wafer-side vernier height gauge 192, and a calculating unit 193. The chuck-side vernier height gauge 191 includes a probe 194, and the height position of the upper surface 102a is measured by bringing the tip of the probe 194 into contact with the upper surface 102a of the chuck base 102. The upper surface 102a of the chuck base 102 is flush with the upper surface of the chuck 101 holding the protective wafer Wp. The wafer side vernier height gauge 192 includes a probe 195, and the tip of the probe 195 is brought into contact with the processing surface W1 of the wafer W to measure the height position of the processing surface W1. The calculation unit 193 calculates the entire thickness of the protective wafer Wp by subtracting the measurement value of the chuck-side vernier height 191 from the measurement value of the wafer-side vernier height 192. The overall thickness is the thickness of the wafer W (the sum of the thickness of the wafer body M and the thickness of the device D) plus the thickness of the protective tape P.
The wafer body thickness measuring unit 200 is provided to the finish grinding unit 170. As shown in fig. 6, the wafer body thickness measuring unit 200 has a sensor 201 and a calculating section 202. The sensor 201 uses a sensor that measures the thickness of the wafer body M without contacting the wafer body M, for example, a white light confocal (confocal) type optical system sensor. The sensor 201 irradiates the wafer body M with light having a predetermined wavelength band, and receives reflected light reflected from the front surface of the wafer body M and reflected light reflected from the back surface of the wafer body M. The calculation section 202 calculates the thickness of the wafer body M based on the two reflected lights received by the sensor 201.
The sensor 201 of the present embodiment can measure the thickness without contacting the wafer body M, and thus can prevent damage to the wafer body M. In particular, in the finish grinding unit 170, since the wafer W (wafer body M) is ground and thinned, and is likely to be damaged, it is useful to be able to measure the thickness of the wafer body M in such a non-contact manner.
In the present embodiment, the sensor 201 of the wafer body thickness measurement unit 200 is a white confocal optical system sensor, but the configuration of the wafer body thickness measurement unit 200 is not limited thereto, and any measuring instrument may be used as long as it is a device that measures the thickness of the wafer body M. Further, a plurality of sensors 201 may be provided.
< wafer treatment >
Next, a wafer process performed by using the substrate processing system 1 configured as described above will be described with reference to a flowchart of fig. 7.
Fig. 8 is an explanatory diagram illustrating how the processing surface W1 of the wafer W is ground in the substrate processing system 1 (processing apparatus 4). As shown in fig. 8 (a), before grinding, the entire thickness of the protective wafer Wp is Twp0, the thickness of the wafer main body M is Tm0, the thickness of the device D is Td, and the thickness of the protective tape P is Tp. Then, the rough grinding in fig. 8 (b), the middle grinding in fig. 8 (c), and the finish grinding in fig. 8 (d) are performed in this order to thin the wafer W. The grinding amounts of rough grinding, intermediate grinding, and finish grinding of processed surface W1 of wafer W are G1, G2, and G3, and the target thicknesses of wafer W after grinding are H1, H2, and H3, respectively.
In the substrate processing system 1, first, the cassette C containing the plurality of protective wafers Wp is placed on the cassette mounting table 10 of the loading station 2. In order to suppress deformation of the protective tape P, the protective wafer Wp is stored in the cassette C such that the non-processed surface W2 of the wafer W to which the protective tape P is joined faces upward.
Subsequently, the protective wafer Wp in the cassette C is taken out by the transport fork 33 of the wafer transport device 32 and transported to the processing device 4. At this time, the front and back surfaces of the wafer W are reversed by the transport fork 33 so that the processing surface W1 of the wafer W faces upward.
The protection wafer Wp transferred to the processing apparatus 4 is transferred to the adjustment unit 120. Then, the adjustment unit 120 adjusts the orientation of the protective wafer Wp in the horizontal direction (step S1 in fig. 7).
Next, in the process of conveying the protective wafer Wp by the conveying unit 110, the thickness Tp of the protective tape P shown in (a) of fig. 8 is measured by the protective tape thickness measuring unit 180 (step S2 of fig. 7). The measurement result of the protective tape thickness measurement unit 180 is output from the calculation section 182 to the control section 40.
Subsequently, the protective wafer Wp is transferred from the adjustment unit 120 to the transfer position a0 by the transfer unit 110, and is transferred to the chuck 101 at the transfer position a 0. Thereafter, the turntable 100 is rotated counterclockwise by 90 degrees, and the chuck 101 is moved to the 1 st processing position a 1.
Next, before rough grinding is performed by the rough grinding unit 150, the entire thickness Twp0 of the protective wafer Wp illustrated in fig. 8 (a) is measured by the entire thickness measuring unit 190 (step S3 in fig. 7). The measurement result of the entire thickness measuring unit 190 is output from the calculating unit 193 to the control unit 40.
The control unit 40 calculates a rough grinding amount G1 of the processed surface W1 of the wafer W in the rough grinding unit 150, based on the thickness Tp of the protective tape P measured in step S2 and the entire thickness Twp0 measured in step S3 (step S4 in fig. 7). Specifically, first, as shown in fig. 8 (b), a target thickness H1 of the wafer W to be left after rough grinding is set. Then, the rough grinding amount G1 is calculated using the following formula (1). The rough grinding amount G1 corresponds to the 1 st grinding amount of the present invention.
G1＝Twp0－Tp－H1····(1)
Next, the rough grinding unit 150 performs rough grinding on the processed surface W1 of the wafer W as shown in fig. 8 b based on the rough grinding amount G1 calculated in step S4 (step S5 in fig. 7).
Next, the turntable 100 is rotated 90 degrees counterclockwise, and the chuck 101 is moved to the 2 nd processing position a 2. Further, before the middle grinding is performed by the middle grinding unit 160, the entire thickness Twp1 of the protection wafer Wp shown in fig. 8 (b) is measured by the entire thickness measuring unit 190 (step S6 of fig. 7). The measurement result of the entire thickness measuring unit 190 is output from the calculating unit 193 to the control unit 40.
The control unit 40 calculates a middle grinding amount G2 of the processed surface W1 of the wafer W in the middle grinding unit 160 based on the thickness Tp of the protective tape P measured in step S2 and the entire thickness Twp1 measured in step S6 (step S7 in fig. 7). Specifically, first, as shown in fig. 8 (c), a target thickness H2 of the wafer W to be left after the middle grinding is set. Then, the intermediate grinding amount G2 is calculated using the following formula (2). The middle grinding amount G2 corresponds to the 2 nd grinding amount of the present invention.
G2＝Twp1－Tp－H2····(2)
Subsequently, as shown in fig. 8 c, intermediate grinding is performed on processed surface W1 of wafer W by intermediate grinding unit 160 based on intermediate grinding amount G2 calculated in step S7 (step S8 in fig. 7).
Subsequently, the turntable 100 is rotated 90 degrees counterclockwise, and the chuck 101 is moved to the 3 rd machining position a 3. Further, before the finish grinding is performed by the finish grinding unit 170, the thickness Tm2 of the wafer main body M shown in (c) of fig. 8 is measured by the wafer main body thickness measuring unit 200 (step S9 of fig. 7). The measurement result of the wafer bulk thickness measurement unit 200 is output from the calculation unit 202 to the control unit 40.
In the control section 40, the finish grinding amount G3 of the processed surface W1 of the wafer W in the finish grinding unit 170 is calculated based on the thickness Td of the device D and the thickness Tm2 of the wafer main body M measured in step S9 (step S10 of fig. 7). Specifically, first, as shown in fig. 8 (d), a target thickness H3 of the wafer W to be left after finish grinding is set. Then, the finish grinding amount G3 is calculated using the following equation (3). The amount of finish grinding G3 corresponds to the 2 nd grinding amount of the present invention.
G3＝Tm2+Td－H3····(3)
In addition, the thickness Td of the device D used in step S10 may or may not be known in advance before the wafer processing. If the thickness Td of the device D is known in advance before the wafer processing, the thickness Td may be directly substituted into the above equation (3).
On the other hand, when the thickness Td of the device D is unknown before the wafer processing, the thickness Td can be calculated from the thickness Tm2 of the wafer main body M measured in step S9. In this case, the thickness Td of the device D is calculated by, for example, two methods. As the 1 st calculation method, the thickness Td of the device D can be calculated by subtracting the thickness Tm2 of the wafer main body M from the target thickness H2 of the wafer W after grinding.
As the 2 nd calculation method, for example, the entire thickness measurement unit 190 is provided in the finish-grinding unit 170, and the entire thickness Twp2 of the protective wafer Wp shown in (c) of fig. 8 is measured before finish-grinding is performed by the finish-grinding unit 170. Then, the thickness Td of the device D can be calculated using the following formula (4).
Td＝Twp2－Tm2－Tp····(4)
Next, the finish grinding unit 170 finish-grinds the processed surface W1 of the wafer W as shown in fig. 8 d based on the finish grinding amount G3 calculated in step S10 (step S11 in fig. 7).
Here, the target thickness H3 of the wafer W is the same as the target thickness of the wafer body M without considering the thickness Td of the device D. In this case, the finish grinding is performed on the processed surface W1 of the wafer W until the thickness of the wafer main body M changes from Tm2 to H3.
Subsequently, the turntable 100 is rotated counterclockwise by 90 degrees or the turntable 100 is rotated clockwise by 270 degrees, and the chuck 101 is moved to the transfer position a 0. Here, the processing surface W1 of the wafer W is roughly cleaned with the cleaning liquid by using a cleaning liquid nozzle (not shown) (step S12 in fig. 7). In step S12, the processed surface W1 is cleaned to remove stains to some extent.
Subsequently, the protective wafer Wp is transferred from the transfer unit 110 at the transfer position a0 to the 2 nd cleaning unit 140. Then, in the 2 nd cleaning unit 140, the unmachined surface W2 (protective tape P) of the wafer W is cleaned and dried in a state where the protective wafer Wp is held on the conveyance tray 114 (step S13 in fig. 7).
Subsequently, the protective wafer Wp is transferred from the 2 nd cleaning unit 140 to the 1 st cleaning unit 130 by the transfer unit 110. Then, in the 1 st cleaning unit 130, the processing surface W1 of the wafer W is cleaned with a cleaning liquid by using a cleaning liquid nozzle (not shown) (step S14 in fig. 7). In step S14, the processed surface W1 is cleaned to a desired cleaning degree and dried.
Thereafter, the protective wafer Wp is transferred from the first cleaning unit 130 to the post-processing apparatus 5 by the wafer transfer apparatus 32. The post-processing apparatus 5 performs post-processing such as mounting processing for holding the protective wafer Wp on the dicing frame, and separation processing for separating the protective tape P joined to the protective wafer Wp (step S15 in fig. 7).
Thereafter, the wafers W subjected to all the processes are conveyed to the cassette C of the cassette mounting table 20 of the delivery station 3. Thus, the series of wafer processes of the substrate processing system 1 is completed.
According to the above embodiment, in the single substrate processing system 1, a series of processes can be continuously performed on the plurality of protective wafers Wp, and the production efficiency of wafer processing can be improved.
Further, according to the present embodiment, the thickness Tp of the protective tape P is measured by the protective tape thickness measuring unit 180, whereby, even if the thickness Tp of the protective tape P is not uniform among the respective protective wafers Wp, at least the middle grinding amount G2 in the middle grinding unit 160 and the finish grinding amount G3 in the finish grinding unit 170 can be made constant, respectively. Further, the grinding of the processed surface W1 of the wafer W can be appropriately performed.
The effects of the present embodiment will be described below with reference to fig. 9. Fig. 9 (a) shows a protective wafer Wpa as a reference. Fig. 9 (b) shows a protective wafer Wpb in which the thickness of the protective tape P is different from that of the protective wafer Wpa. Fig. 9 (c) shows a protective wafer Wpc having a different thickness from the protective wafer Wpa before the grinding process.
As described above, the grinding amounts G1, G2, and G3 in rough grinding, middle grinding, and finish grinding are calculated by the following expressions (1), (2), and (3), respectively.
G1＝Twp0－Tp－H1····(1)
G2＝Twp1－Tp－H2····(2)
G3＝Tm2+Td－H3····(3)
In this case, first, the protection wafers Wpa and Wpb shown in fig. 9 (a) and (b) will be described. For the protection wafers Wpa and Wpb, the thicknesses of the protection belts Pa and Pb are Tpa and Tpb respectively, and the thickness Tpb is larger than the thickness Tpa. The thicknesses of the wafer main bodies Ma and Mb before grinding are equal to and Tma0 and Tmb0, respectively, and the thicknesses of the devices Da and Db are equal to and Tda and Tdb, respectively.
The rough grinding amount G1 during rough grinding is calculated by the above equation (1), and (Twpa 0-Tpa) of the protective wafer Wpa is the same as (Twpb 0-Tpb) of the protective wafer Wpb. Thus, rough grinding amount Ga1 for protective wafer Wpa is the same as rough grinding amount Gb1 for protective wafer Wpb.
Similarly, the intermediate grinding amount G2 during intermediate grinding is calculated by the above equation (2), and the intermediate grinding amount Ga2 for the protective wafer Wpa is the same as the intermediate grinding amount Gb2 for the protective wafer Wpb. Further, the amount of finish grinding G3 in finish grinding is calculated from the above equation (3), and the amount of finish grinding Ga3 to the protective wafer Wpa is the same as the amount of finish grinding Gb3 to the protective wafer Wpb.
As described above, according to the present embodiment, even if the thicknesses Tpa and Tpb of the protective tapes Pa and Pb are different from each other, the rough grinding amounts Ga1 and Gb1, the middle grinding amounts Ga2 and Gb2, and the finish grinding amounts Ga3 and Gb3 can be made the same for the respective protective wafers Wpa and Wpb.
Next, the protective wafers Wpa and Wpc shown in fig. 9 (a) and (c) will be described. For the protective wafers Wpa and Wpc, the thicknesses of the wafer main bodies Ma and Mc before grinding are Tma0 and Tmc0, respectively, and the thickness Tmc0 is greater than the thickness Tma 0. The thicknesses of the guard bands Pa, Pc are Tpa, Tpc respectively and the same, and the thicknesses of the devices Da, Dc are Tda, Tdc respectively and the same.
In this case, since the entire thickness Twpa0 of the protective wafer Wpa and the entire thickness Twpc0 of the protective wafer Wpc are different from each other, the rough grinding amounts Ga1 and Gc1 in the rough grinding calculated by the above equation (1) are different from each other.
However, the overall thicknesses Twpa1 and Twpc1 after rough grinding can be made the same. Then, as for the middle grinding amount G2 in the middle grinding, the middle grinding amount Ga2 to the protective wafer Wpa and the middle grinding amount Gc2 to the protective wafer Wpc are the same according to the above equation (2). In addition, as for the amount of finish grinding G3 in finish grinding, the amount of finish grinding Ga3 to the protective wafer Wpa and the amount of finish grinding Gc3 to the protective wafer Wpc are the same according to the above equation (3).
As described above, according to the present embodiment, when the thicknesses Tma0 and Tmc0 of the wafer main bodies Ma and Mc before the grinding process are different, the intermediate grinding amounts Ga2 and Gc2 and the finish grinding amounts Ga3 and Gc3 can be made the same for the respective protection wafers Wpa and Wpc. Here, a damaged layer is formed in rough grinding. Further, if the thickness of the damaged layer changes, the subsequent process becomes non-uniform. In this regard, as in the present embodiment, the overall thicknesses Twpa1 and Twpc1 after rough grinding are the same, and the middle grinding amounts Ga2 and Gc2 and the finish grinding amounts Ga3 and Gc3 are also the same, that is, the remaining portions of the damaged layer are the same, and therefore, the subsequent processes (middle grinding and finish grinding) are the same. As a result, the protection wafers Wpa and Wpc can be uniformly processed.
< other embodiments >
In the above embodiment, the rough grinding in step S5 may be performed in a plurality of steps. The rough grinding in step S5 is performed, for example, by steps such as a lost motion (japanese: エアカット) in which the rough grinding unit 151 (rough grinder) is lowered at a low speed, followed by steps such as step S51 in which the rough grinding is performed at a high speed, and step S52 in which the rough grinding is performed at a low speed.
As described above, when the thickness of the wafer body M before the grinding process differs among the plurality of protective wafers Wp, the rough grinding amount G1 differs among the protective wafers Wp. On the other hand, in the low-speed step S52, the grinding amount G12 is preferably a grinding amount that does not cause stress on the wafer W and is preferably a fixed value common to the plurality of wafers W.
Therefore, the grinding amount G11 in the high-speed step S51 is set to a variation value that varies among the protective wafers Wp. Specifically, after the rough grinding amount G1 is calculated for each protective wafer Wp, the grinding amount G12 (fixed value) of each step S52 is subtracted from the rough grinding amount G1 to calculate the grinding amount G11 of step S51.
In this case, the grinding amount G11 at the high speed step S51 differs between the protective wafers Wp, but the grinding amount G12 at the low speed step S52 can be fixed. Accordingly, the second half of the rough grinding can reduce the stress acting on the wafer W as compared with the first half, and the rough grinding can be performed appropriately.
Step S52 may be further divided into a plurality of steps. Depending on the thickness of the wafer W, the grinding may be performed only by the grinding amount G12 (fixed value) of step S52 without step S51. For example, when there are a plurality of steps and there are fixed values of a plurality of grinding amounts, the first half of the plurality of steps may be omitted and grinding may be performed only by the fixed grinding amount.
In addition, in the above embodiment, in the middle grinding in step S8, the entire thickness of the protective wafer Wp is measured by the contact-type entire thickness measuring unit 190, but the entire thickness of the protective wafer Wp is sometimes measured in the first half of the middle grinding, and the thickness of the wafer body M is sometimes measured in the second half of the middle grinding. For example, at the time of grinding in the beginning, in the case where the thickness of the wafer W is relatively thick, the entire thickness of the protective wafer Wp can be measured by the contact-type entire thickness measuring unit 190 (first half process). When the thickness of the wafer W reaches a predetermined thickness, the thickness of the wafer body M is measured by the noncontact wafer body thickness measuring unit 200 (latter half process).
In this case, the middle grinding amount G2 is calculated by dividing the front half grinding amount G21 in the front half process and the rear half grinding amount G22 in the rear half process. Specifically, in the first half process, the first half grinding amount G21 is calculated using the above equation (2) based on the entire thickness Twp1 of the protective wafer Wp measured by the entire thickness measuring unit 190, the thickness Tp of the protective tape P measured in step S2, and the above predetermined thickness (H2).
In the latter half of the process, the latter half grinding amount G22 is calculated using the above equation (3) based on the thickness Tm2 of the wafer body M measured by the wafer body thickness measurement unit 200, the thickness Td of the device D calculated from, for example, the thickness Tm2, and the target thickness H3 after the finish grinding. Further, the middle grinding of the processed surface W1 of the wafer W can be properly performed based on the first half grinding amount G21 and the second half grinding amount G22. In addition, the thickness Td of the device D may also use a value input in advance.
In addition, with the finish grinding of step S11, there is also a case where the entire thickness of the protective wafer Wp is measured in the first half process and the thickness of the wafer body M is measured in the second half process. In this case, the finish grinding amount G3 is calculated by dividing into the first half grinding amount G31 and the second half grinding amount G32, similarly to the above-described middle grinding amount G2.
In the substrate processing system 1 of the above embodiment, the protective tape thickness measuring unit 180 measures the thickness of the protective tape P with respect to the protective wafer Wp being conveyed by the conveying unit 110, but the protective tape thickness measuring unit 180 may be disposed at any position as long as it is before the rough grinding unit 150 roughly grinds the processed surface W1 of the wafer W. That is, the protective tape thickness measuring unit 180 can be disposed between the feeding station 2 to the rough grinding unit 150. Specifically, the protective tape thickness measuring unit 180 may be provided inside the adjusting unit 120 or inside the feeding station 2.
In the substrate processing system 1 of the above embodiment, the processing apparatus 4 includes the rough grinding unit 150, the middle grinding unit 160, and the finish grinding unit 170, but the configuration of the units is not limited thereto. The rough grinding unit 150 may be disposed at the 1 st processing position a1, the finish grinding unit 170 may be disposed at the 2 nd processing position a2, and the grinding unit (not shown) may be disposed at the 3 rd processing position A3. In this case, as in the above-described embodiment, the rough grinding amount G1 of the rough grinding unit 150 and the finish grinding amount G3 of the finish grinding unit 170 are calculated, respectively, so that the processing surface W1 of the wafer W can be ground properly.
In the above embodiment, the protective tape P for protecting the device D is bonded to the non-processing surface W2 of the wafer W, but the protector for the device D is not limited to this. For example, a support substrate such as a support wafer or a glass substrate may be bonded to the non-processed surface W2 of the wafer W, and the present invention can also be applied to this case.
The embodiments of the present invention have been described above, but the present invention is not limited to the examples. It is obvious to those skilled in the art that various modifications and variations can be made within the scope of the technical idea described in the claims, and these are also within the scope of the present invention.
Description of the reference numerals
1. A substrate processing system; 2. a delivery station; 3. a delivery station; 4. a processing device; 5. a post-processing device; 6. a delivery station; 40. a control unit; 150. a rough grinding unit; 160. a middle grinding unit; 170. a finish grinding unit; 180. a protective tape thickness measuring unit; 190. an overall thickness measuring unit; 200. a wafer body thickness measuring unit; D. a device; m, a wafer main body; p, a protective belt; w, a wafer; w1, processing surface; w2, non-machined surface; and Wp, protecting the wafer.
Claims (12)
1. A substrate processing system for processing a processing surface of a substrate having a protective member provided on a non-processing surface thereof,
the substrate processing system includes:
a grinding section that grinds the processing surface of the substrate in a plurality of steps;
a protector thickness measuring portion that measures a thickness of the protector before the grinding portion grinds the processing surface of the substrate;
an overall thickness measuring section that measures an overall thickness of the substrate and the protective member; and
and a control unit that calculates a1 st grinding amount in the 1 st grinding process step based on a bulk thickness measured by the bulk thickness measurement unit before the substrate is ground in a1 st grinding process step of grinding the processing surface of the substrate by the grinding unit, a protector thickness measured by the protector thickness measurement unit, and a target thickness of the substrate after being ground in the 1 st grinding process step, such that a2 nd grinding amount in a2 nd grinding process step after the 1 st grinding process step is constant among the substrates.
2. The substrate processing system of claim 1,
in the 1 st grinding process, the grinding process is divided into a plurality of steps to grind the processed surface of the substrate,
the control unit sets a grinding amount in a2 nd step after a1 st step of grinding the processing surface of the substrate among the grinding in the plurality of steps,
the control unit calculates the grinding amount in the 1 st step based on the overall thickness measured by the overall thickness measuring unit, the protector thickness measured by the protector thickness measuring unit, and the grinding amount set in the 2 nd step.
3. The substrate processing system of claim 1,
the control unit calculates a2 nd grinding amount in the 2 nd grinding process step based on the entire thickness measured by the entire thickness measuring unit before the substrate is ground in the 2 nd grinding process step, the protector thickness measured by the protector thickness measuring unit, and a target thickness of the substrate after the substrate is ground in the 2 nd grinding process step.
4. The substrate processing system of claim 1,
the overall thickness measuring section measures the overall thickness of the substrate and the protective member until the overall thickness reaches a prescribed thickness,
the substrate processing system further includes a substrate thickness measuring unit that measures a thickness of the substrate after the total thickness reaches the predetermined thickness,
the control unit calculates a2 nd first half grinding amount in the 2 nd grinding process step based on the entire thickness measured by the entire thickness measuring unit, the protector thickness measured by the protector thickness measuring unit, and the predetermined thickness before the substrate is ground in the 2 nd grinding process step,
then, after the total thickness reaches the predetermined thickness, the control unit controls the grinding unit so that the substrate is ground to a target thickness of the substrate after being ground in the 2 nd grinding process step, based on the substrate thickness measured by the substrate thickness measuring unit.
5. The substrate processing system of claim 1,
the substrate includes a substrate main body and a device formed on a non-processing surface side of the substrate main body and protected by the protection member,
the substrate processing system has a substrate main body thickness measuring section that measures a thickness of the substrate main body,
the control unit calculates a2 nd grinding amount in the 2 nd grinding process step based on a substrate main body thickness measured by the substrate main body thickness measuring unit before the substrate is ground in the 2 nd grinding process step, a thickness of the device calculated from the substrate main body thickness, and a target thickness of the substrate after being ground in the 2 nd grinding process step.
6. The substrate processing system of claim 1,
the grinding portion has a1 st grinding portion for performing the 1 st grinding process and a2 nd grinding portion for performing the 2 nd grinding process.
7. A substrate processing method for processing a processing surface of a substrate having a protective member provided on a non-processing surface thereof,
the substrate processing method includes:
a protector thickness measuring step of measuring a thickness of the protector;
a plurality of grinding processes for grinding the processing surface of the substrate after the protective member thickness measuring process;
a1 st entire thickness measuring step of measuring an entire thickness of the substrate and the protective member in a1 st grinding process step of grinding a processing surface of the substrate among the plurality of grinding process steps,
the 1 st grinding amount in the 1 st grinding process is calculated such that the 2 nd grinding amount in the 2 nd grinding process after the 1 st grinding process is constant among the respective substrates, based on the bulk thickness measured by the 1 st bulk thickness measurement process before the substrates are ground in the 1 st grinding process, the protector thickness measured in the protector thickness measurement process, and the target thickness of the substrates after being ground in the 1 st grinding process.
8. The substrate processing method according to claim 7, wherein,
in the 1 st grinding process, the grinding process is divided into a plurality of steps to grind the processed surface of the substrate,
setting a grinding amount in a2 nd step after a1 st step of grinding a processing surface of the substrate among the grinding in the plurality of steps,
the grinding amount in the 1 st step is calculated based on the overall thickness measured in the 1 st overall thickness measuring step, the protector thickness measured in the protector thickness measuring step, and the grinding amount set in the 2 nd step.
9. The substrate processing method according to claim 7, wherein,
the substrate processing method comprises a2 nd whole thickness measuring step for measuring the whole thickness of the substrate and the protective member in the 2 nd grinding step,
the 2 nd grinding amount in the 2 nd grinding process step is calculated based on the overall thickness measured by the 2 nd overall thickness measurement step before the substrate is ground in the 2 nd grinding process step, the protector thickness measured in the protector thickness measurement step, and a target thickness of the substrate after being ground in the 2 nd grinding process step.
10. The substrate processing method according to claim 7, wherein,
the substrate processing method includes:
a2 nd overall thickness measuring step of measuring an overall thickness of the substrate and the protective member in the 2 nd grinding processing step until the overall thickness reaches a predetermined thickness; and
a substrate thickness measuring step of measuring the thickness of the substrate after the entire thickness reaches the predetermined thickness in the 2 nd grinding treatment step,
calculating a2 nd first half grinding amount in the 2 nd grinding process step based on the overall thickness measured by the 2 nd overall thickness measurement step before the substrate is ground in the 2 nd grinding process step, the protector thickness measured in the protector thickness measurement step, and the predetermined thickness,
after the total thickness reaches the predetermined thickness, the substrate is ground to a target thickness of the substrate after being ground in the 2 nd grinding process step, based on the substrate thickness measured in the substrate thickness measurement step.
11. The substrate processing method according to claim 7, wherein,
the substrate includes a substrate main body and a device formed on a non-processing surface side of the substrate main body and protected by the protection member,
the substrate processing method comprises a substrate main body thickness measuring step of measuring the thickness of the substrate main body in the 2 nd grinding processing step,
the 2 nd grinding amount in the 2 nd grinding process step is calculated based on the substrate body thickness measured by the substrate body thickness measurement step before the substrate is ground in the 2 nd grinding process step, the thickness of the device calculated from the substrate body thickness, and the target thickness of the substrate after being ground in the 2 nd grinding process step.
12. A computer storage medium readable and storing a program for running on a computer controlling a control section of a substrate processing system to execute a substrate processing method for processing a processing surface of a substrate provided with a protector on a non-processing surface by the substrate processing system, wherein,
the substrate processing method includes:
a protector thickness measuring step of measuring a thickness of the protector;
a plurality of grinding processes for grinding the processing surface of the substrate after the protective member thickness measuring process;
a1 st entire thickness measuring step of measuring an entire thickness of the substrate and the protective member in a1 st grinding process step of grinding a processing surface of the substrate among the plurality of grinding process steps,
the 1 st grinding amount in the 1 st grinding process is calculated such that the 2 nd grinding amount in the 2 nd grinding process after the 1 st grinding process is constant among the respective substrates, based on the bulk thickness measured by the 1 st bulk thickness measurement process before the substrates are ground in the 1 st grinding process, the protector thickness measured in the protector thickness measurement process, and the target thickness of the substrates after being ground in the 1 st grinding process.
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| JP2017-246732 | 2017-12-22 | ||
| PCT/JP2018/044366 WO2019124032A1 (en) | 2017-12-22 | 2018-12-03 | Substrate processing system, substrate processing method, and computer storage medium |
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Also Published As
| Publication number | Publication date |
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| KR20200099565A (en) | 2020-08-24 |
| TW201929078A (en) | 2019-07-16 |
| KR102604525B1 (en) | 2023-11-22 |
| WO2019124032A1 (en) | 2019-06-27 |
| JP6968201B2 (en) | 2021-11-17 |
| TWI806935B (en) | 2023-07-01 |
| JPWO2019124032A1 (en) | 2020-12-17 |
| CN111479654A (en) | 2020-07-31 |
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