CN111477717A - Self-refrigerating antimonide superlattice infrared detector and preparation method thereof - Google Patents
Self-refrigerating antimonide superlattice infrared detector and preparation method thereof Download PDFInfo
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- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title abstract description 4
- 238000005057 refrigeration Methods 0.000 claims abstract description 68
- 229910000673 Indium arsenide Inorganic materials 0.000 claims abstract description 41
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910005542 GaSb Inorganic materials 0.000 claims abstract description 33
- 230000004888 barrier function Effects 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 11
- 238000005516 engineering process Methods 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000003353 gold alloy Substances 0.000 claims description 2
- ZNKMCMOJCDFGFT-UHFFFAOYSA-N gold titanium Chemical compound [Ti].[Au] ZNKMCMOJCDFGFT-UHFFFAOYSA-N 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 claims description 2
- 229910001258 titanium gold Inorganic materials 0.000 claims description 2
- 230000005284 excitation Effects 0.000 description 7
- 230000005641 tunneling Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000005679 Peltier effect Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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Abstract
A self-refrigerating antimonide superlattice infrared detector and a preparation method thereof are disclosed, wherein the self-refrigerating antimonide superlattice infrared detector comprises: a substrate; a buffer ohmic contact layer formed on the substrate; an emitter layer formed on the buffer ohmic contact layer; the emitter layer comprises an n-type heavily-doped InAs/GaSb second-class superlattice; the micro refrigeration area is formed on the emitter layer; the micro-refrigeration area sequentially comprises Al from bottom to topxGa1‑xThe quantum well structure comprises an Sb barrier, an InAs quantum well and a GaSb barrier, wherein x is more than 0.5 and less than 1; the superlattice refrigeration area is formed on the micro refrigeration area; the superlattice refrigeration area comprises InAs/GaSb intrinsic second-class superlattice; a collector layer formed on the super layerAnd a lattice refrigeration zone. The invention enables the antimonide superlattice infrared detector to work at higher temperature, and improves the working performance of the antimonide superlattice infrared detector.
Description
Technical Field
The invention relates to the technical field of infrared detectors, in particular to a self-refrigerating antimonide superlattice infrared detector and a preparation method thereof.
Background
With the rapid development of semiconductor technology and integrated circuit technology, from an integrated circuit composed of dozens of electronic and optoelectronic devices, which can only realize simple functions, to an ultra-large-scale integrated circuit in which the integration density is continuously improved and the integrated chip is more and more complex, wherein the power density of the chip is continuously increased, the reliability of the device is greatly reduced due to the heat generated by the chip, and the performance of the device is deteriorated accordingly.
Therefore, it is a critical issue to solve the problem of chip heat generation.
The most common cooling method currently used for integrated circuit chips is the traditional thermoelectric cooling method, the principle of which is based on the Peltier effect found by Peltier (Peltier) in 1834 years, when current passes through a loop consisting of different conductors, in addition to irreversible Joule heating, heat absorption and release occur at the junctions of the different conductors, respectively, along with the difference in current direction, while most thermoelectric coolers use BiTe materials, which are more expensive to miniaturize and less compatible with the traditional IC process1Is smaller than the electron mean free path I2So as to reduce the diffusion and drift motion of electrons, and avoid collision with impurity scattering center, so that the generated Joule heat is less。
In 1977, Sai-Halasz, Tsu, and Esaki proposed the concept of two types of superlattices for the first time, and Johnson et al demonstrated in 1996 that the two types of superlattices could be used as materials for infrared detectors. The InAs/GaSb second-class superlattice is used as the material of the infrared detector, the wavelength is easy to adjust, the effective quality of electrons is large, the Auger recombination rate is low, the response high sensitivity is strong, but because of the high sensitivity, the easy noise interference also, therefore most of InAs/GaSb second-class superlattice infrared detectors need to work under the low-temperature environment, and the low-temperature equipment is especially equipment with the refrigerating temperature lower than 77K, the cost is high, the size is large, and the carrying is difficult, therefore, the working temperature of the InAs/GaSb second-class superlattice infrared detectors is improved, and the InAs/GaSb second-class superlattice infrared detectors is always an important problem which is attempted to be solved by scientific research personnel in.
Disclosure of Invention
In view of the above, the present invention provides a self-refrigerating antimonide superlattice infrared detector and a method for manufacturing the same, so as to at least partially solve at least one of the above-mentioned technical problems.
In order to achieve the purpose, the invention provides the technical scheme that:
as one aspect of the present invention, there is provided a self-refrigerating antimonide superlattice infrared detector, comprising:
a substrate;
a buffer ohmic contact layer formed on the substrate;
an emitter layer formed on the buffer ohmic contact layer; the emitter layer comprises an n-type heavily-doped InAs/GaSb second-class superlattice;
the micro refrigeration area is formed on the emitter layer; the micro-refrigeration area sequentially comprises Al from bottom to topxGa1-xThe quantum well structure comprises an Sb barrier, an InAs quantum well and a GaSb barrier, wherein x is more than 0.5 and less than 1;
the superlattice refrigeration area is formed on the micro refrigeration area; the superlattice refrigeration area comprises InAs/GaSb intrinsic second-class superlattice;
the collector electrode layer is formed on the superlattice refrigerating area;
an upper electrode formed on the collector layer;
and the lower electrode is formed on the exposed area of the buffer ohmic contact layer.
As another aspect of the present invention, there is also provided a method for preparing the self-refrigerating antimonide superlattice infrared detector, comprising the following steps:
a molecular beam epitaxy technology is adopted, and a buffer ohmic contact layer, an emitter layer, a micro-refrigeration region, a superlattice refrigeration region and a collector layer are epitaxially grown on the substrate from bottom to top in sequence;
forming a patterned photoresist on the collector layer by a photoetching technology;
taking the patterned photoresist as a mask, corroding the collector layer, the superlattice refrigerating area, the micro refrigerating area and the emitter layer by a wet method, and etching until the buffer ohmic contact layer forms a mesa structure;
and forming a lower electrode on the exposed area of the buffer ohmic contact layer and forming an upper electrode on the collector layer by adopting a sputtering method.
Based on the technical scheme, compared with the prior art, the invention has at least one or one part of the following beneficial effects:
the invention adopts the thermionic refrigeration principle to combine with InAs/GaSb second-class superlattice materials, through the design of an energy band structure, a micro-refrigeration area is arranged between an emission collection layer and a light absorption area (namely a superlattice refrigeration area), under the condition of applying a certain bias voltage, electrons can reach an InAs quantum well from the emission collection layer in a resonant tunneling mode, and partial heat of an emitter layer is taken away by the electrons by utilizing a resonant tunneling mechanism, so that the self-refrigeration of the emitter layer is realized; then the electrons are transported to the superlattice refrigeration area in a thermal excitation mode, so that the electrons transported from the emitter layer and the photo-generated electrons in the superlattice refrigeration area and the micro refrigeration area are transported to the collector layer in a thermal excitation mode, and therefore, not only can the collection of photocurrent be realized, but also the refrigeration effect of the superlattice in the light absorption area can be realized, and therefore, the antimonide superlattice infrared detector can work at a higher temperature, and the working performance of the antimonide superlattice infrared detector is improved;
in order to improve the refrigeration effect, the Seebeck coefficient of a light absorption area (a superlattice refrigeration area) is improved, the height of the energy level of electrons in an InAs quantum well from a GaSb potential barrier is adjusted to be less than or equal to 0.3eV, and the specific parameters of the potential barrier height are adjusted and compromised by combining the wavelength of a detector, the response of the detector, the quantum efficiency, the detection rate and the like, so that the cold-producing and detection win-win situation of an antimonide superlattice infrared detector is realized;
in addition, the invention adopts InAs/GaSb system materials, so as to reduce the strain and dislocation between the micro-refrigeration area and the superlattice refrigeration area.
Drawings
FIG. 1 is a schematic view of the growth structure of the self-refrigerating antimonide superlattice infrared detector of the present invention;
fig. 2 is a schematic diagram of the band structure of the self-refrigerating antimonide superlattice infrared detector of the invention.
In the above drawings, the reference numerals are as follows:
1. a substrate; 2. a buffer ohmic contact layer; 3. an emitter layer; 4. a micro-refrigeration zone; 5. a superlattice refrigeration zone; 6. a collector layer; 7. an upper electrode; 8. and a lower electrode.
Detailed Description
The invention provides a new idea of semiconductor refrigeration, which is characterized in that the material selection of a semiconductor refrigerator is not limited to a high Seebeck coefficient material such as a BiTe material due to the thermionic refrigeration principle. The principle makes the same function of raising the barrier height and raising the Seebeck coefficient, so that the material selection of the semiconductor refrigerator material has more freedom, such as GaAs/═ AlAs, InP/InGaAs and the InAs/GaSb superlattice material adopted by the invention. Therefore, the semiconductor refrigerator manufactured by utilizing the thermionic principle solves the problem that the BiTe material is difficult to be compatible with the traditional IC process, and reduces the cost. Moreover, the thermionic refrigeration mode is different from the traditional thermoelectric refrigeration mode, and the joule heat brought by the thermionic refrigeration mode is smaller, so that the thermionic refrigeration mode theoretically has higher refrigeration efficiency.
For the detector, when the working temperature is 77K, a metal Dewar can be adopted, the refrigeration equipment is simple and low in cost, and when the required temperature is lower than 77K, the adopted refrigeration equipment is high in cost and complex to operate. The self-refrigerating antimonide superlattice infrared detector disclosed by the invention has the advantages that the requirement on the working temperature is lower than that of a common infrared detector because the refrigeration effect and the light detection capability are combined together, if the temperature provided by the outside is 77K, the actual working temperature of the self-refrigerating antimonide superlattice infrared detector is less than 77K, the detection performance is better, and if the temperature provided by the outside is about 60K, the self-refrigerating antimonide superlattice infrared detector can even not need an additional refrigerator, and the requirement can be met only by adopting a low-cost metal dewar.
Moreover, the self-refrigeration type antimonide superlattice infrared detector is low in self-integration difficulty, low in refrigeration cost, low in implementation difficulty and higher in working temperature than a common infrared detector, and high requirements on refrigeration equipment and high cost caused by refrigeration are greatly reduced.
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
As one aspect of the present invention, as shown in fig. 1, there is provided a self-refrigerating antimonide superlattice infrared detector, comprising: a substrate 1; a buffer ohmic contact layer 2 formed on the substrate 1; an emitter layer 3 formed on the buffer ohmic contact layer 2; the emitter layer 3 comprises an n-type heavily doped InAs/GaSb second-class superlattice; a micro-refrigeration area 4 formed on the emitter layer 3; the micro-refrigeration area 4 sequentially comprises Al from bottom to topxGa1-xThe quantum well structure comprises an Sb barrier, an InAs quantum well and a GaSb barrier, wherein x is more than 0.5 and less than 1; a superlattice refrigeration area 5 formed on the micro-refrigeration area 4; the superlattice refrigeration area 5 comprises InAs/GaSb intrinsic second-class superlattice; a collector layer 6 formed on the superlattice refrigeration region 5; an upper electrode 7 formed on the collector layer 6; and a lower electrode 8 formed on the exposed region of the buffer ohmic contact layer 2.
In the embodiment of the present invention, the emitter layer 3 is heavily doped with Si with a doping concentration of 1018～1019/cm3(ii) a The thickness of the emitter layer 3 is 200 to 500 nm.
In the embodiment of the invention, Al of the micro-refrigeration area 4xGa1-xThe thickness of the Sb barrier is 8-12 nm, and x is more than 0.5 and less than 1.
In the embodiment of the invention, the InAs quantum well of the micro-refrigeration area 4 is not doped, and the thickness is 4-10 nm.
In the embodiment of the invention, the GaSb barrier of the micro-refrigeration area 4 is not doped, and the thickness is 50-70 nm.
In an embodiment of the present invention, the superlattice refrigeration region 5 has a thickness greater than 1 micron.
In an embodiment of the invention, the collector layer 6 comprises a heavily Si-doped InAs/GaSb superlattice of the type II with a doping concentration of 1018～1019/cm3(ii) a The thickness of the collector layer 6 is 400-1000 nm.
In an embodiment of the present invention, the substrate 1 comprises GaSb; the buffer ohmic contact layer 2 includes GaSb; the thickness of the buffer ohmic contact layer 2 is 500 to 1000 nm.
In the embodiment of the present invention, the material of the upper electrode 7 and the lower electrode 8 includes titanium-gold alloy.
In the embodiment of the present invention, of the materials of the upper electrode 7 and the lower electrode 8, the thickness of Ti may be, but is not limited to, 100nm, and the thickness of Au may be, but is not limited to, 300 nm.
As another aspect of the present invention, there is also provided a method for preparing the self-refrigerating antimonide superlattice infrared detector, comprising the following steps:
a molecular beam epitaxy technology is adopted, and a buffer ohmic contact layer 2, an emitter layer 3, a micro-refrigeration region 4, a superlattice refrigeration region 5 and a collector layer 6 are epitaxially grown on a substrate 1 from bottom to top in sequence;
forming a patterned photoresist on the collector layer 6 by a photolithography technique;
taking the patterned photoresist as a mask, corroding the collector layer 6, the superlattice refrigerating area 5, the micro refrigerating area 4 and the emitter layer 3 by a wet method until the buffer ohmic contact layer 2 forms a mesa structure;
a lower electrode 8 is formed on the exposed region of the buffer ohmic contact layer 2 and an upper electrode 7 is formed on the collector layer 6 by a sputtering method.
In the embodiment of the invention, in the wet etching, the etching solution is a mixed solution prepared by hydrogen peroxide, citric acid and phosphoric acid in a proper ratio (the volume ratio is 2: 8: 1), and the etching solution is used for etching the epitaxial wafer to etch the mesa structure of the self-refrigerating antimonide superlattice infrared detector.
As shown in fig. 2, when the self-cooling type antimonide superlattice infrared detector is in an operating state, a negative bias is applied to the emitter layer 3 side, and a positive bias is applied to the collector layer 6 side, and this state is referred to as a positive bias operating state. The emitter layer 3 is composed of n-type heavily doped InAs/GaSb second-class superlattice, the thickness is 200-500 nm, and the doping concentration is 1018～1019/cm3When the device is in a forward bias working state, the energy band is inclined, as shown by a dotted line in fig. 2, the working bias is adjusted, so that the electron energy level in the emitter layer 3 is equal to the energy level in the InAs quantum well of the micro-refrigeration area 4, a resonant tunneling condition is achieved, a large amount of electrons in the emitter layer 3 enter the InAs quantum well through resonant tunneling at the moment, partial heat of the emitter layer 3 is taken away, and a refrigeration effect of the emitter layer 3 to a certain degree can be achieved. When electrons enter the InAs quantum well, the main transport mode of the electrons in the InAs quantum well is thermal excitation through the structural design of the device. In order to make thermal excitation become the main transport mode of electrons in the InAs quantum well, the following conditions need to be satisfied:
electrons in the InAs quantum well are thermally excited, and the height of the GaSb barrier to be spanned is less than or equal to 300 meV.
The width of the GaSb barrier for blocking the electron transportation in the InAs quantum well is larger than the tunneling length of electrons and smaller than the mean free path of electrons.
The conditions can reduce that electrons in the InAs quantum well pass through a potential barrier in a tunneling and drift-diffusion mode, and reduce the joule heat brought in the electron transportation process. Therefore, the GaSb barrier of the micro-refrigeration area 4 is not doped, and the thickness is 50-70 nm.
When the outside is illuminated, the superlattice refrigerating area 5 consisting of the InAs/GaSb intrinsic two-class superlattice absorbs photons, electrons in a GaSb valence band absorb the photons and jump to the electronic energy level of an InAs conduction band, and the electrons in the InAs conduction band are transported to the InAs conduction band in the next period in a thermal excitation mode. In each period, after photons are absorbed, electrons jump to an InAs conduction band and are mainly transported in a thermal excitation mode, so that heat in an InAs quantum well in the period can be taken away, the temperature of the superlattice refrigeration area 5 can be reduced, and the self-refrigeration function of the antimonide superlattice infrared detector can be realized.
The invention adopts the combination of molecular beam epitaxy technology and thermionic refrigeration principle to design and manufacture the self-refrigerating antimonide superlattice infrared detector. By designing the energy band structure, electrons reach the InAs quantum well from the emitter in a resonant tunneling mode, and then are transported in a thermal excitation mode, so that the heat of the emitter layer 3, the micro-refrigerating area 4 and the superlattice refrigerating area 5 is taken away, the self-refrigerating function is completed, and the working performance of the antimonide superlattice infrared detector can be improved.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A self-refrigerating antimonide superlattice infrared detector is characterized by comprising:
a substrate;
a buffer ohmic contact layer formed on the substrate;
an emitter layer formed on the buffer ohmic contact layer; the emitter layer comprises an n-type heavily-doped InAs/GaSb second-class superlattice;
the micro refrigeration area is formed on the emitter layer; the micro-refrigeration area sequentially comprises Al from bottom to topxGa1-xSb barrier, InAs quantum wellAnd a GaSb barrier, wherein x is more than 0.5 and less than 1;
the superlattice refrigeration area is formed on the micro refrigeration area; the superlattice refrigeration area comprises InAs/GaSb intrinsic second-class superlattice;
the collector electrode layer is formed on the superlattice refrigerating area;
an upper electrode formed on the collector layer;
and the lower electrode is formed on the exposed area of the buffer ohmic contact layer.
2. The self-refrigerating antimonide superlattice infrared detector as claimed in claim 1, wherein the emitter layer is heavily doped with Si with a doping concentration of 1018～1019/cm3；
The thickness of the emitter layer is 200-500 nm.
3. The self-refrigerated antimonide superlattice infrared detector as recited in claim 1, wherein said AI of said micro-refrigeration areaxGa1-xThe thickness of the Sb barrier is 8-12 nm, and x is more than 0.5 and less than 1.
4. The self-refrigerating antimonide superlattice infrared detector as recited in claim 1, wherein the InAs quantum well of the micro-refrigerating region is undoped and has a thickness of 4-10 nm.
5. The self-refrigerating antimonide superlattice infrared detector as recited in claim 1, wherein the GaSb barrier of the micro-refrigerating area is undoped and has a thickness of 50-70 nm.
6. The self-refrigerated antimonide superlattice infrared detector as recited in claim 1, wherein said superlattice refrigeration zone has a thickness greater than 1 micron.
7. The self-refrigerated antimonide superlattice infrared detector of claim 1, wherein said collector layer comprises InAs/Ga heavily doped with SiSb second type superlattice with doping concentration of 1018～1019/cm3；
The thickness of the collector layer is 400-1000 nm.
8. The self-refrigerated antimonide superlattice infrared detector of claim 1, wherein said substrate comprises GaSb;
the buffer ohmic contact layer includes GaSb;
the thickness of the buffer ohmic contact layer is 500-1000 nm.
9. The self-refrigerating antimonide superlattice infrared detector as recited in claim 1, wherein the material of the upper electrode and the lower electrode comprises titanium-gold alloy.
10. A method for preparing the self-refrigerating antimonide superlattice infrared detector as defined in any one of claims 1-9, comprising the following steps:
a molecular beam epitaxy technology is adopted, and a buffer ohmic contact layer, an emitter layer, a micro-refrigeration region, a superlattice refrigeration region and a collector layer are epitaxially grown on the substrate from bottom to top in sequence;
forming a patterned photoresist on the collector layer by a photoetching technology;
taking the patterned photoresist as a mask, corroding the collector layer, the superlattice refrigerating area, the micro refrigerating area and the emitter layer by a wet method, and etching until the buffer ohmic contact layer forms a mesa structure;
and forming a lower electrode on the exposed area of the buffer ohmic contact layer and forming an upper electrode on the collector layer by adopting a sputtering method.
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