CN111477671B - Array substrate, driving method, manufacturing method and display device thereof - Google Patents

Array substrate, driving method, manufacturing method and display device thereof Download PDF

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Publication number
CN111477671B
CN111477671B CN202010401647.0A CN202010401647A CN111477671B CN 111477671 B CN111477671 B CN 111477671B CN 202010401647 A CN202010401647 A CN 202010401647A CN 111477671 B CN111477671 B CN 111477671B
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light
emitting
transistor
emitting device
electrically connected
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CN111477671A (en
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刘利宾
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to CN202310544495.3A priority patent/CN116507161A/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/128—Active-matrix OLED [AMOLED] displays comprising two independent displays, e.g. for emitting information from two major sides of the display
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The invention discloses an array substrate, a driving method, a manufacturing method and a display device thereof, wherein a top emission light emitting region and a transparent light emitting region are arranged in one sub-pixel, and a light emitting control switching module is arranged in a pixel circuit, so that a top emission light emitting device in the top emission light emitting region and a transparent display light emitting device in the transparent light emitting region can be respectively driven in one sub-pixel. Therefore, top emission display can be adopted in the array substrate to realize better scene display; transparent display is adopted to realize double-sided display and reduce power consumption; meanwhile, top emission display and transparent display are adopted, so that the light emitting area is enlarged while the light emitting brightness is ensured, and the service life of the light emitting device is further prolonged.

Description

Array substrate, driving method, manufacturing method and display device thereof
Technical Field
The invention relates to the technical field of display, in particular to an array substrate, a driving method, a manufacturing method and a display device thereof.
Background
Electroluminescent diodes such as organic light emitting diodes (Organic Light Emitting Diode, OLED) and quantum dot light emitting diodes (Quantum Dot Light Emitting Diodes, QLED) have the advantages of self-luminescence, low energy consumption and the like, and are one of the hot spots in the application research field of the current electroluminescent display devices.
Disclosure of Invention
The embodiment of the invention provides an array substrate, a driving method, a preparation method and a display device thereof, which can realize top emission display and transparent display.
Therefore, the embodiment of the invention provides an array substrate, which comprises a plurality of sub-pixels arranged in an array; the sub-pixel has a top emission light emitting region and a transparent light emitting region, the top emission light emitting region including a pixel circuit and a top emission light emitting device; the transparent light emitting area comprises a transparent display light emitting device;
the pixel circuit comprises a light-emitting control switching module; the light-emitting control switching module is respectively and electrically connected with the top-emitting light-emitting device and the transparent display light-emitting device;
the light-emitting control switching module is used for driving the top-emitting light-emitting device and the transparent display light-emitting device to emit light in a first display mode, driving the top-emitting light-emitting device to emit light in a second display mode, and driving the transparent display light-emitting device to emit light in a third display mode.
Optionally, the array substrate further includes a plurality of first light emission control signal lines and a plurality of second light emission control signal lines; the light-emitting control switching module comprises a first light-emitting control module and a second light-emitting control module;
The first light-emitting control module is configured to drive the top-emission light-emitting device to emit light according to a signal of the first light-emitting control signal line;
the second light-emitting control module is configured to drive the transparent display light-emitting device to emit light according to a signal of the second light-emitting control signal line.
Optionally, the pixel circuit further includes: a driving transistor, a first data writing transistor, a second data writing transistor, a reset transistor, an anode reset transistor and a storage capacitor; wherein:
the first end of the first data writing transistor is electrically connected with the data signal end, the control end of the first data writing transistor is electrically connected with the scanning signal end, and the second end of the first data writing transistor is electrically connected with the first pole of the driving transistor;
the first end of the second data writing transistor is electrically connected with the grid electrode of the driving transistor, the control end of the second data writing transistor is electrically connected with the scanning signal end, and the second end of the second data writing transistor is electrically connected with the second electrode of the driving transistor;
the first end of the reset transistor is electrically connected with the initialization signal end, the control end of the reset transistor is electrically connected with the reset signal end, and the second end of the reset transistor is electrically connected with the grid electrode of the driving transistor;
The first end of the anode reset transistor is electrically connected with the initialization signal end, the control end of the anode reset transistor is electrically connected with the scanning signal end, and the second end of the anode reset transistor is electrically connected with the anode layer of the top emission light-emitting device;
the first end of the storage capacitor is electrically connected with the first power supply end, and the second end of the storage capacitor is electrically connected with the grid electrode of the driving transistor.
Optionally, the first light emission control module includes a first light emission control transistor and a second light emission control transistor, and the second light emission control module includes a third light emission control transistor and a fourth light emission control transistor; wherein:
the first end of the first light-emitting control transistor is electrically connected with the first power supply end, the control end of the first light-emitting control transistor is electrically connected with the first light-emitting control signal line, and the second end of the first light-emitting control transistor is electrically connected with the first pole of the driving transistor;
the first end of the second light-emitting control transistor is electrically connected with the second electrode of the driving transistor, the control end of the second light-emitting control transistor is electrically connected with the first light-emitting control signal line, and the second end of the second light-emitting control transistor is electrically connected with the anode layer of the top-emitting light-emitting device;
The first end of the third light-emitting control transistor is electrically connected with the first power supply end, the control end of the third light-emitting control transistor is electrically connected with the second light-emitting control signal line, and the second end of the third light-emitting control transistor is electrically connected with the first electrode of the driving transistor;
the first end of the fourth light-emitting control transistor is electrically connected with the second electrode of the driving transistor, the control end of the fourth light-emitting control transistor is electrically connected with the second light-emitting control signal line, and the second end of the fourth light-emitting control transistor is electrically connected with the anode layer of the transparent display light-emitting device.
Optionally, the top emission light emitting device and the transparent display light emitting device include an anode layer, a light emitting layer, and a cathode layer; wherein the anode layer of the top emission light emitting device comprises: the first transparent electrode layer, the metal layer and the second transparent electrode layer; the anode layer of the transparent display light emitting device includes a third transparent electrode layer.
Optionally, the materials of the first transparent electrode layer and the third transparent electrode layer include polycrystalline indium tin oxide; the material of the metal layer comprises silver; the material of the second transparent electrode layer comprises amorphous indium tin oxide.
Optionally, the array substrate further includes a first driving circuit and a second driving circuit, where the first driving circuit and the second driving circuit are respectively disposed at two sides of the plurality of sub-pixels arranged in the array;
the first driving circuit is electrically connected with the plurality of first light-emitting control signal lines and is used for loading signals to the plurality of first light-emitting control signal lines;
the second driving circuit is electrically connected with the plurality of second light-emitting control signal lines and is used for loading signals to the plurality of second light-emitting control signal lines.
Correspondingly, the embodiment of the invention also provides a driving method of any one of the array substrates, which comprises the following steps:
a first display mode, loading the same signals to a first light-emitting control signal line and a second light-emitting control signal line in each row of sub-pixels in sequence, so that a second electrode of the driving transistor is conducted with the top-emitting light-emitting device and the transparent display light-emitting device, and the top-emitting light-emitting device and the transparent display light-emitting device are driven to emit light;
a second display mode, loading a cut-off signal to a second light-emitting control signal line, and loading a conduction signal to a first light-emitting control signal line in each row of sub-pixels in turn, so that a second electrode of the driving transistor is conducted with the top-emitting light-emitting device, and the top-emitting light-emitting device is driven to emit light;
And in a third display mode, a cut-off signal is loaded on the first light-emitting control signal line, and a turn-on signal is loaded on the second light-emitting control signal line in each row of sub-pixels in sequence, so that the second electrode of the driving transistor and the transparent display light-emitting device are driven to emit light.
Correspondingly, the embodiment of the invention also provides a preparation method of any one of the array substrates, wherein the array substrate comprises a substrate and comprises the following steps:
forming a pixel circuit on a substrate;
and forming a top emission light emitting device and a transparent display light emitting device on one side of the pixel circuit, which is away from the substrate.
Optionally, the forming a top emission light emitting device and a transparent display light emitting device on a side of the pixel circuit facing away from the substrate includes:
forming an anode layer of the top emission light emitting device and an anode layer of the transparent display light emitting device by adopting a one-time composition process;
forming a luminescent layer on one side of the anode layer, which is away from the substrate by adopting a one-time composition process;
and forming a cathode layer on one side of the light-emitting layer, which is away from the substrate.
Optionally, the forming the anode layer of the top emission light emitting device and the anode layer of the transparent display light emitting device by adopting a one-time patterning process specifically includes:
Sequentially forming a polycrystalline indium tin oxide layer, a silver layer and an amorphous indium tin oxide layer along the direction of the pixel circuit deviating from the substrate;
forming a photoresist covering a substrate base plate on the substrate base plate;
exposing and developing the photoresist by adopting a half-tone mask plate to enable the photoresist with the first thickness in the top emission luminous area and the photoresist with the second thickness in the transparent luminous area; wherein the first thickness is greater than the second thickness;
etching the substrate base plate, and reserving the polycrystalline indium tin oxide layer, the silver layer and the amorphous indium tin oxide layer in the top emission luminous region and the transparent luminous region;
processing the photoresist in the top emission light-emitting region and the transparent light-emitting region, removing the photoresist in the transparent light-emitting region, and thinning the photoresist in the top emission light-emitting region;
etching the substrate by adopting a first etching solution to remove the amorphous indium tin oxide layer and the silver layer in the transparent light-emitting area, and reserving the polycrystalline indium tin oxide layer in the transparent light-emitting area and reserving the polycrystalline indium tin oxide layer, the silver layer and the amorphous indium tin oxide layer in the top-emitting light-emitting area;
And removing the photoresist in the top-emission light-emitting region.
Correspondingly, the embodiment of the invention also provides a display device which comprises the array substrate.
The invention has the following beneficial effects:
according to the array substrate, the driving method, the manufacturing method and the display device, the top emission light-emitting area and the transparent light-emitting area are arranged in one sub-pixel, and the light-emitting control switching module is arranged in the pixel circuit, so that the top emission light-emitting device in the top emission light-emitting area and the transparent display light-emitting device in the transparent light-emitting area can be driven in one sub-pixel respectively. Therefore, top emission display can be adopted in the array substrate to realize better scene display; transparent display is adopted to realize double-sided display and reduce power consumption; meanwhile, top emission display and transparent display are adopted, so that the light emitting area is enlarged while the light emitting brightness is ensured, and the service life of the light emitting device is further prolonged.
Drawings
FIG. 1 is a schematic diagram of an array substrate according to an embodiment of the present invention;
fig. 2 is a top view of a sub-pixel in an array substrate according to an embodiment of the present invention;
FIG. 3 is a cross-sectional view of a sub-pixel in an array substrate according to an embodiment of the present invention;
Fig. 4 is a schematic structural diagram of a pixel circuit according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of another array substrate according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a top emission light emitting device and a transparent display light emitting device according to an embodiment of the present invention;
FIG. 7 is a timing diagram of signals according to an embodiment of the present invention;
FIG. 8 is a timing diagram of yet another embodiment of the present invention;
FIG. 9 is a timing diagram of yet another embodiment of signals;
FIG. 10 is a partial flow chart of a method for manufacturing an array substrate according to an embodiment of the present invention;
FIG. 11a is a schematic diagram of a fabricated array substrate according to an embodiment of the present invention;
FIG. 11b is a schematic diagram of another array substrate in preparation according to an embodiment of the present invention;
FIG. 11c is a schematic diagram of another array substrate in preparation according to an embodiment of the present invention;
FIG. 11d is a schematic diagram of another array substrate in preparation according to an embodiment of the present invention;
FIG. 11e is a schematic diagram of another array substrate in preparation according to an embodiment of the present invention;
FIG. 11f is a schematic diagram of another array substrate in preparation according to an embodiment of the present invention;
Fig. 11g is a schematic diagram of another array substrate in preparation according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. It will be apparent that the described embodiments are some, but not all, embodiments of the invention. And embodiments of the invention and features of the embodiments may be combined with each other without conflict. All other embodiments, which can be made by a person skilled in the art without creative efforts, based on the described embodiments of the present invention fall within the protection scope of the present invention.
Unless defined otherwise, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The terms "first," "second," and the like, as used herein, do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof, but does not exclude other elements or items. The terms "connected" or "electrically connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect.
It should be noted that the dimensions and shapes of the figures in the drawings do not reflect true proportions, and are intended to illustrate the present invention only. And the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout.
An array substrate provided by an embodiment of the present invention, as shown in fig. 1 to 4, includes: a substrate base 10, a plurality of sub-pixels P arranged in an array; the sub-pixel P has a top emission light emitting region a and a transparent light emitting region B, and the top emission light emitting region a may include the pixel circuit 100 and the top emission light emitting device AL; the transparent light emitting region B may include a transparent display light emitting device BL;
the pixel circuit 100 may include a light emission control switching module 110; the light-emitting control switching module 110 is electrically connected with the top emission light-emitting device AL and the transparent display light-emitting device BL, respectively;
the light emission control switching module 110 is configured to drive the top emission light emitting device AL and the transparent display light emitting device BL to emit light in a first display mode, drive the top emission light emitting device AL to emit light in a second display mode, and drive the transparent display light emitting device BL to emit light in a third display mode.
The array substrate provided in the embodiment of the present invention has the top emission light emitting region a and the transparent light emitting region B disposed in one sub-pixel P, and the top emission light emitting device AL in the top emission light emitting region a and the transparent display light emitting device BL in the transparent light emitting region B can be driven in one sub-pixel P by disposing the light emission control switching module 110 in the pixel circuit 100. Therefore, top emission display can be adopted in the array substrate to realize better scene display; transparent display is adopted to realize double-sided display and reduce power consumption; meanwhile, top emission display and transparent display are adopted, so that the light emitting area is enlarged while the light emitting brightness is ensured, and the service life of the light emitting device is further prolonged.
In particular, in order to realize the double-sided display in the transparent light emitting region B in the subpixel P, it is necessary to dispose the opaque pixel circuit 100 in the top-emission light emitting region a, and in particular, as shown in fig. 2 and 3, the pixel circuit 100 may be disposed between the substrate base 10 and the top-emission light emitting device AL.
In practice, the top emission light emitting device AL and the transparent display light emitting device BL may be organic light emitting diodes (Organic Light Emitting Diode, OLED), which are not limited herein.
In particular, in the embodiment of the present invention, as shown in fig. 4 and 5, the array substrate may further include a plurality of first light emission control signal lines EM1 and a plurality of second light emission control signal lines EM2; the light emission control switching module 110 may include a first light emission control module 111 and a second light emission control module 112;
the first light emission control module 111 is configured to drive the top emission light emitting device AL to emit light according to a signal of the first light emission control signal line EM 1;
the second light emission control module 112 is configured to drive the transparent display light emitting device BL to emit light according to a signal of the second light emission control signal line EM 2.
In implementation, in an embodiment of the present invention, as shown in fig. 4, the pixel circuit 100 may further include: a driving transistor DTFT, a first data writing transistor D1, a second data writing transistor D2, a reset transistor R, an anode reset transistor LR, and a storage capacitor Cst; wherein: a first end of the first Data writing transistor D1 is electrically connected with the Data signal end Data, a control end of the first Data writing transistor D1 is electrically connected with the scanning signal end Gate, and a second end of the first Data writing transistor D1 is electrically connected with a first pole of the driving transistor DTFT; the first end of the second data writing transistor D2 is electrically connected with the Gate electrode of the driving transistor DTFT, the control end of the second data writing transistor D2 is electrically connected with the scanning signal end Gate, and the second end of the second data writing transistor D2 is electrically connected with the second electrode of the driving transistor DTFT; the first end of the reset transistor R is electrically connected with the initialization signal end Vinit, the control end of the reset transistor R is electrically connected with the reset signal end, and the second end of the reset transistor R is electrically connected with the grid electrode of the driving transistor DTFT; the first end of the anode reset transistor LR is electrically connected with the initialization signal end Vinit, the control end of the anode reset transistor LR is electrically connected with the scanning signal end Gate, and the second end of the anode reset transistor LR is electrically connected with the anode layer of the top emission light-emitting device AL; the first terminal of the storage capacitor Cst is electrically connected to the first power supply terminal ELVDD, and the second terminal of the storage capacitor Cst is electrically connected to the gate electrode of the driving transistor DTFT. Of course, in the embodiment, the other necessary components of the pixel circuit 100 except for the light emission control switching module 110 are not limited to the above-mentioned structure provided in the embodiment of the present invention, and may be the same as those in the prior art, and are not limited herein.
In particular implementation, in an embodiment of the present invention, as shown in fig. 4, the first light emission control module 111 may include a first light emission control transistor E1 and a second light emission control transistor E2, and the second light emission control module 112 may include a third light emission control transistor E3 and a fourth light emission control transistor E4; wherein:
a first terminal of the first light emitting control transistor E1 is electrically connected to the first power supply terminal ELVDD, a control terminal of the first light emitting control transistor E1 is electrically connected to the first light emitting control signal line EM1, and a second terminal of the first light emitting control transistor E1 is electrically connected to the first electrode of the driving transistor DTFT;
a first end of the second light-emitting control transistor E2 is electrically connected with a second electrode of the driving transistor DTFT, a control end of the second light-emitting control transistor E2 is electrically connected with the first light-emitting control signal line EM1, and a second end of the second light-emitting control transistor E2 is electrically connected with an anode layer of the top-emitting light-emitting device AL;
a first end of the third light-emitting control transistor E3 is electrically connected to the first power supply end ELVDD, a control end of the third light-emitting control transistor E3 is electrically connected to the second light-emitting control signal line EM2, and a second end of the third light-emitting control transistor E3 is electrically connected to the first electrode of the driving transistor DTFT;
The first end of the fourth light emission control transistor E4 is electrically connected to the second electrode of the driving transistor DTFT, the control end of the fourth light emission control transistor E4 is electrically connected to the second light emission control signal line EM2, and the second end of the fourth light emission control transistor E4 is electrically connected to the anode layer of the transparent display light emitting device BL.
In a specific implementation, the first light emission control transistor E1 and the second light emission control transistor E2 are controlled by the signal of the first light emission control signal line EM1, and when the first light emission control transistor E1 and the second light emission control transistor E2 are turned on, the turned-on first light emission control transistor E1 supplies the signal of the first power supply terminal ELVDD to the first pole of the driving transistor DTFT, and the turned-on second light emission control transistor E2 supplies the signal of the second pole of the driving transistor DTFT to the top emission light emitting device AL, thereby driving the top emission light emitting device AL to emit light. The third light emission control transistor E3 and the fourth light emission control transistor E4 are both controlled by the signal of the second light emission control signal line EM2, and when the third light emission control transistor E3 and the fourth light emission control transistor E4 are turned on, the turned-on third light emission control transistor E3 supplies the signal of the first power supply terminal ELVDD to the first electrode of the driving transistor DTFT, and the turned-on fourth light emission control transistor E4 supplies the signal of the second electrode of the driving transistor DTFT to the transparent display light emitting device BL, thereby driving the transparent display light emitting device BL to emit light.
Specifically, in order to unify the manufacturing process, in the array substrate provided in the embodiment of the present invention, as shown in fig. 4, all the transistors may be P-type transistors. Of course, all the transistors may be N-type transistors, which is not limited herein.
Specifically, in the array substrate provided by the embodiment of the invention, the P-type transistor is turned on under the action of a low-level signal and turned off under the action of a high-level signal; the N-type transistor is turned on under the action of a high-level signal and turned off under the action of a low-level signal.
Specifically, in the array substrate provided in the embodiment of the present invention, each of the above-mentioned transistors may be a thin film transistor (TFT, thin Film Transistor) or a metal oxide semiconductor field effect transistor (MOS, metal Oxide Scmiconductor), which is not limited herein. The control terminal of each transistor is used as a gate, and the first terminal of the switching transistor may be used as a source, the second terminal of the switching transistor may be used as a drain, or the first terminal of the switching transistor may be used as a drain, and the second terminal of the switching transistor may be used as a source, depending on the types of the transistors and the signals of the gates of the transistors, which are not particularly distinguished herein.
In a specific implementation, in an embodiment of the present invention, as shown in fig. 5, the array substrate may further include a first driving circuit GOA1 and a second driving circuit GOA2, where the first driving circuit GOA1 and the second driving circuit GOA2 are respectively disposed at two sides of a plurality of sub-pixels P arranged in an array;
The first driving circuit GOA1 is electrically connected with the plurality of first light emitting control signal lines EM1 and is used for loading signals to the plurality of first light emitting control signal lines EM 1;
the second driving circuit GOA2 is electrically connected to the plurality of second emission control signal lines EM2, and is configured to apply signals to the plurality of second emission control signal lines EM 2.
By arranging two driving circuits on two sides of the plurality of sub-pixels P arranged in an array, signals are respectively loaded on the first light-emitting control signal line EM1 and the second light-emitting control signal line EM2, so that the driving circuits are prevented from being arranged on the same side, and adverse effects on the realization of a narrow frame due to the arrangement of the first driving circuit and the second driving circuit are reduced.
In particular implementations, in an embodiment of the present invention, as shown in FIG. 6, a top-emission light-emitting device AL may include an anode layer AL-10, a light-emitting layer AL-20, and a cathode layer AL-30. Wherein the anode layer AL-10 of the top emission light emitting device AL includes: a first transparent electrode layer AL-11, a metal layer AL-12, a second transparent electrode layer AL-13. Illustratively, the cathode layers of both the top-emitting light emitting device AL and the transparent display light emitting device BL are typically made of transparent conductive materials. The anode layer AL-10 of the top emission light-emitting device AL adopts a metal layer sandwiched between two transparent electrode layers, and light emitted by the light-emitting layer AL-20 is reflected by the metal layer, so that the top emission light-emitting device AL only emits light from the cathode layer AL-30, and top emission display is realized. Illustratively, the material of the first transparent electrode layer AL-11 may include polycrystalline indium tin oxide, the material of the metal layer AL-12 may include silver, and the material of the second transparent electrode layer AL-13 may include amorphous indium tin oxide. Of course, the materials of the transparent electrode layers and the metal layers may be other materials known to those skilled in the art, and are not limited herein. The light emitting layer may be an organic light emitting layer, and specifically may include a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer, although the light emitting layer may be other structures known to those skilled in the art, and is not limited herein.
In particular, in an embodiment of the present invention, as shown in FIG. 6, the transparent display light emitting device BL also includes an anode layer BL-10, a light emitting layer BL-20, and a cathode layer BL-30; the anode layer of the transparent display light emitting device BL includes a third transparent electrode layer BL-11. The anode layer BL-10 and the cathode layer BL-30 of the transparent display light emitting device BL may be made of transparent conductive materials, so that the transparent display light emitting device BL can emit light from the cathode layer BL-30 as well as the anode layer BL-10 to realize double-sided display. Illustratively, the material of the third transparent electrode layer BL-11 may include polycrystalline indium tin oxide. Of course, other materials known to those skilled in the art are also possible, and are not limited herein. The light emitting layer may be an organic light emitting layer, and specifically may include a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer, although the light emitting layer may be other structures known to those skilled in the art, and is not limited herein.
Based on the same inventive concept, the embodiment of the invention also provides a driving method of any one of the array substrates, which comprises the following steps:
a first display mode, loading the same signals to a first light-emitting control signal line EM1 and a second light-emitting control signal line EM2 in each row of sub-pixels P in sequence, so that a second electrode of the driving transistor DTFT is conducted with the top-emitting light-emitting device AL and the transparent display light-emitting device BL, and the top-emitting light-emitting device and the transparent display light-emitting device are driven to emit light;
In the second display mode, a cut-off signal is loaded on a second light-emitting control signal line EM2, and a conduction signal is sequentially loaded on a first light-emitting control signal line EM1 in each row of sub-pixels P, so that a second electrode of a driving transistor DTFT is conducted with a top-emitting light-emitting device AL, and the top-emitting light-emitting device is driven to emit light;
in the third display mode, a turn-off signal is applied to the first emission control signal line EM1, and a turn-on signal is sequentially applied to the second emission control signal line EM2 in each row of sub-pixels P, so that the second electrode of the driving transistor DTFT and the transparent display light emitting device BL are driven to emit light.
When the array substrate is in the second display mode, namely the array substrate adopts top emission display; when the array substrate is in the third display mode, namely the array substrate adopts transparent display; when the array substrate is in the first display mode, namely the array substrate adopts top emission display and transparent display at the same time.
The present invention will be described in detail with reference to specific examples. The present embodiment is for better explaining the present invention, but not limiting the present invention.
The working process of the array substrate provided by the embodiment of the invention is described below with reference to a circuit timing diagram. In the following description, a high level is indicated by 1, and a low level is indicated by 0. It should be noted that 1 and 0 are logic levels, which are only for better explaining the specific operation of the embodiment of the present invention, and are not specific voltage values.
Embodiment 1,
The following describes the operation of the array substrate in the first display mode according to the embodiment of the present invention with reference to the signal timing diagram shown in fig. 7 by taking the pixel circuit 100 shown in fig. 4 as an example. Specifically, three stages of the first stage t1, the second stage t2, and the third stage t3 in the signal timing diagram shown in fig. 7 are selected for illustration.
In the first phase t1, EM 1=1, reset=0, gate=1, em2=1.
Since the EM 1=1, the first and second light-emission control transistors E1 and E2 are turned off, and the top-emission light-emitting device AL does not emit light. Since the EM 2=1, the third and fourth light-emission control transistors E3 and E4 are turned off, and the transparent display light-emitting device BL does not emit light. Since reset=0, the Reset transistor R is turned on, and the turned-on Reset transistor R supplies a signal of the initialization signal terminal Vinit to the gate of the driving transistor DTFT to Reset the gate of the driving transistor DTFT. Since gate=1, the first data writing transistor D1, the second data writing transistor D2, and the anode reset transistor LR are all turned off.
In the second phase t2, EM 1=1, reset=1, gate=0, em2=1.
Since the EM 1=1, the first and second light-emission control transistors E1 and E2 are turned off, and the top-emission light-emitting device AL does not emit light. Since the EM 2=1, the third and fourth light-emission control transistors E3 and E4 are turned off, and the transparent display light-emitting device BL does not emit light. Since reset=1, the Reset transistor R is turned off. Since gate=0, the first Data writing transistor D1, the second Data writing transistor D2 and the anode reset transistor LR are all turned on, and the turned-on first Data writing transistor D1 writes the signal of the Data signal terminal Data into the first pole of the driving transistor DTFT; the second Data writing transistor D2 conducts the second pole and the grid electrode of the driving transistor DTFT, so that the driving transistor DTFT forms a diode structure, and the signal of the Data signal end Data and the threshold voltage of the driving transistor DTFT are written into the grid electrode of the driving transistor DTFT; the turned-on anode reset transistor LR supplies a signal of the initialization signal terminal Vinit to the anode of the top emission light emitting device AL to reset it.
In the third phase t3, EM 1=0, reset=1, gate=1, em2=0.
Since EM 1=0, the first and second emission control transistors E1 and E2 are turned on. Since EM 2=0, the third light-emission control transistor E3 and the fourth light-emission control transistor E4 are turned on. Since reset=1, the Reset transistor R is turned off. Since gate=1, the first data writing transistor D1, the second data writing transistor D2, and the anode reset transistor LR are all turned off. The turned-on first and third light emission control transistors E1 and E3 supply a signal of the first power supply terminal ELVDD to the first electrode of the driving transistor DTFT, so that the driving transistor DTFT generates a driving current under the control of a signal of the gate thereof and a signal of the first electrode. The turned-on third light emission control transistor E3 turns on the second electrode of the driving transistor DTFT and the anode of the top emission light emitting device AL to make the top emission light emitting device AL emit light. The fourth light emission control transistor E4, which is turned on, turns on the second electrode of the driving transistor DTFT and the anode of the transparent light emitting device to make the transparent light emitting device emit light.
Embodiment II,
The operation of the array substrate in the second display mode according to the embodiment of the present invention is described below with reference to the signal timing diagram shown in fig. 8 by taking the pixel circuit 100 shown in fig. 4 as an example. Only the differences between the present embodiment and the first embodiment will be described below, and the details of the differences will not be described herein.
In the first to third phases t1 to t3, EM 2=1, and the third and fourth emission control transistors E3 and E4 remain turned off, the transparent light emitting device does not emit light.
Third embodiment,
The following describes the operation of the array substrate in the third display mode according to the embodiment of the present invention with reference to the signal timing diagram shown in fig. 9 by taking the pixel circuit 100 shown in fig. 4 as an example. Only the differences between the present embodiment and the first embodiment will be described below, and the details of the differences will not be described herein.
In the first to third phases t1 to t3, EM 1=1, and the first and second light emission control transistors E1 and E2 remain turned off, the top emission light emitting device AL does not emit light.
Based on the same inventive concept, the embodiment of the invention also provides a preparation method of any one of the array substrates, which comprises the following steps:
s100, forming a pixel circuit on a substrate;
and S200, forming a top-emission light-emitting device and a transparent display light-emitting device on one side of the pixel circuit, which is away from the substrate.
In the implementation, the specific method for forming the pixel circuit on the substrate may be the same as that in the prior art, and will not be described herein.
In a specific implementation, in an embodiment of the present invention, a top emission light emitting device and a transparent display light emitting device are formed on a side of a pixel circuit facing away from a substrate, including:
S210, forming an anode layer of the top-emission light-emitting device and an anode layer of the transparent display light-emitting device by adopting a one-time composition process;
s220, forming a light-emitting layer on one side of the anode layer, which is away from the substrate, by adopting a one-time composition process;
s230, forming a cathode layer on one side of the light-emitting layer, which is away from the substrate.
In specific implementation, in the embodiment of the present invention, the anode layer of the top emission light emitting device and the anode layer of the transparent display light emitting device are formed by a one-time patterning process, as shown in fig. 10, 11a to 11g, and specifically include:
s211, sequentially forming a polycrystalline indium tin oxide layer 31, a silver layer 32 and an amorphous indium tin oxide layer 33 along the direction of the pixel circuit 100 away from the substrate 10; as shown in fig. 11 a.
S212, forming a photoresist 34 covering the substrate 10 on the substrate 10; as shown in fig. 11 b.
S213, exposing and developing the photoresist 34 by adopting a half-tone mask plate to enable the photoresist 34 with the first thickness in the top emission luminous area A and the photoresist 34 with the second thickness in the transparent luminous area B; as shown in fig. 11 c.
S214, etching the substrate 10, and reserving the polycrystalline indium tin oxide layer 31, the silver layer 32 and the amorphous indium tin oxide layer 33 in the top emission light-emitting area A and the transparent light-emitting area B; as shown in fig. 11 d.
S215, processing the photoresist 34 in the top emission light-emitting area A and the transparent light-emitting area B, removing the photoresist 34 in the transparent light-emitting area B, and thinning the photoresist 34 in the top emission light-emitting area A; as shown in fig. 11 e. For example, an ashing process may be used to remove the photoresist 34 in the transparent light emitting region B and thin the photoresist 34 in the top emission light emitting region a.
S216, etching the substrate 10 by adopting a first etching solution to remove the amorphous indium tin oxide layer 33 and the silver layer 32 in the transparent light-emitting area B, and reserving the polycrystalline indium tin oxide layer 31 in the transparent light-emitting area B and reserving the polycrystalline indium tin oxide layer 31, the silver layer 32 and the amorphous indium tin oxide layer 33 in the top-emission light-emitting area A; as shown in fig. 11 f.
S217, removing the photoresist 34 in the top emission light emitting region A; as shown in fig. 11 g.
In the implementation, the specific method of sequentially forming the polycrystalline indium tin oxide layer 31, the silver layer 32, and the amorphous indium tin oxide layer 33 along the direction of the pixel circuit 100 away from the substrate 10 and forming the photoresist 34 covering the substrate 10 on the substrate 10 may be substantially the same as that in the prior art, and will not be repeated herein.
In specific implementation, as shown in fig. 11c, the first thickness may be greater than the second thickness in step S213. The halftone mask typically has an opaque region, a semi-transparent region, and a completely transparent region, and in step S213, the photoresist 34 in the top emission light emitting region a may be exposed by using the opaque region, and the photoresist 34 in the transparent light emitting region B may be exposed by using the semi-transparent region with lower transmittance, so that the photoresist thickness remaining in the top emission light emitting region a may be greater than the photoresist thickness remaining in the transparent light emitting region B after development. Of course, in the implementation, the method of making the first thickness greater than the second thickness may be other methods known to those skilled in the art, and is not limited herein. For the region other than the top emission light emitting region a and the transparent light emitting region B, for example, the space region C between the top emission light emitting region a and the transparent light emitting region B, the photoresist 34 in the space region C may be exposed with the completely light transmitting region, so that the photoresist 34 in the space region C may be completely removed at the time of development.
In particular, in step S214, the substrate 10 may be etched by using an etching solution, and the polycrystalline indium tin oxide layer 31, the silver layer 32, and the amorphous indium tin oxide layer 33 in the top emission light emitting region a and the transparent light emitting region B are not directly contacted with the etching solution because the photoresist 34 remains in the top emission light emitting region a and the transparent light emitting region B. For the regions other than the top emission light emitting region a and the transparent light emitting region B, the photoresist 34 is removed in step S213, and the polycrystalline indium tin oxide layer 31, the silver layer 32, and the amorphous indium tin oxide layer 33 are etched away. For example, as shown in fig. 11d, the polycrystalline indium tin oxide layer 31, the silver layer 32, and the amorphous indium tin oxide layer 33 in the space region C are etched away.
In practice, in step S215, the photoresist 34 may be processed using an ashing process, so that the photoresist 34 in the transparent light emitting region B may be removed and the photoresist 34 in the top emission light emitting region a may be thinned as shown in fig. 11 e.
In particular, in step S216, the first etching solution is used to etch away only the silver layer 32 and the amorphous indium tin oxide layer 33, and has no etching effect on the polycrystalline indium tin oxide layer 31. Since the photoresist 34 in the transparent light emitting region B is removed in step S215 while the photoresist 34 remains in the top emission light emitting region a, only the silver layer 32 and the amorphous indium tin oxide layer 33 in the transparent light emitting region B are etched away.
In the implementation, in step S217, that is, after removing the photoresist 33 in the top emission light emitting region a, the light emitting layers and the cathode layers of the top emission light emitting device AL and the transparent display light emitting device BL are continuously formed in the top emission light emitting region a and the transparent light emitting region B, respectively, and the specific preparation method thereof may be substantially the same as that in the prior art, and will not be described herein.
Based on the same inventive concept, the embodiment of the invention also provides a display device, which comprises any one of the array substrates provided by the embodiment of the invention. The implementation of the display device can be referred to the embodiment of the array substrate, and the repetition is not repeated.
In a specific implementation, the display device may be: any product or component with display function such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator and the like. Other essential components of the display device will be understood by those skilled in the art, and are not described herein in detail, nor should they be considered as limiting the invention.
According to the array substrate, the driving method, the manufacturing method and the display device, the top emission light-emitting area and the transparent light-emitting area are arranged in one sub-pixel, and the light-emitting control switching module is arranged in the pixel circuit, so that the top emission light-emitting device in the top emission light-emitting area and the transparent display light-emitting device in the transparent light-emitting area can be driven in one sub-pixel respectively. Therefore, top emission display can be adopted in the array substrate to realize better scene display; transparent display is adopted to realize double-sided display and reduce power consumption; meanwhile, top emission display and transparent display are adopted, so that the light emitting area is enlarged while the light emitting brightness is ensured, and the service life of the light emitting device is further prolonged.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.

Claims (8)

1. An array substrate is characterized by comprising a plurality of sub-pixels which are arranged in an array manner; the sub-pixel has a top emission light emitting region and a transparent light emitting region, the top emission light emitting region including a pixel circuit and a top emission light emitting device; the transparent light emitting area comprises a transparent display light emitting device;
the pixel circuit comprises a light-emitting control switching module; the light-emitting control switching module is respectively and electrically connected with the top-emitting light-emitting device and the transparent display light-emitting device;
the light-emitting control switching module is used for driving the top-emitting light-emitting device and the transparent display light-emitting device to emit light in a first display mode, driving the top-emitting light-emitting device to emit light in a second display mode, and driving the transparent display light-emitting device to emit light in a third display mode;
the array substrate further comprises a plurality of first light-emitting control signal lines and a plurality of second light-emitting control signal lines; the light-emitting control switching module comprises a first light-emitting control module and a second light-emitting control module;
The first light-emitting control module is configured to drive the top-emission light-emitting device to emit light according to a signal of the first light-emitting control signal line;
the second light-emitting control module is configured to drive the transparent display light-emitting device to emit light according to the signal of the second light-emitting control signal line;
the array substrate further comprises a first driving circuit and a second driving circuit, and the first driving circuit and the second driving circuit are respectively arranged on two sides of the plurality of sub-pixels arranged in the array;
the first driving circuit is electrically connected with the plurality of first light-emitting control signal lines and is used for loading signals to the plurality of first light-emitting control signal lines;
the second driving circuit is electrically connected with the plurality of second light-emitting control signal lines and is used for loading signals to the plurality of second light-emitting control signal lines;
the pixel circuit further includes: a driving transistor, a first data writing transistor, a second data writing transistor, a reset transistor, an anode reset transistor and a storage capacitor; wherein:
the first end of the first data writing transistor is electrically connected with the data signal end, the control end of the first data writing transistor is electrically connected with the scanning signal end, and the second end of the first data writing transistor is electrically connected with the first pole of the driving transistor;
The first end of the second data writing transistor is electrically connected with the grid electrode of the driving transistor, the control end of the second data writing transistor is electrically connected with the scanning signal end, and the second end of the second data writing transistor is electrically connected with the second electrode of the driving transistor;
the first end of the reset transistor is electrically connected with the initialization signal end, the control end of the reset transistor is electrically connected with the reset signal end, and the second end of the reset transistor is electrically connected with the grid electrode of the driving transistor;
the first end of the anode reset transistor is electrically connected with the initialization signal end, the control end of the anode reset transistor is electrically connected with the scanning signal end, and the second end of the anode reset transistor is electrically connected with the anode layer of the top emission light-emitting device;
the first end of the storage capacitor is electrically connected with the first power supply end, and the second end of the storage capacitor is electrically connected with the grid electrode of the driving transistor;
the first light emission control module comprises a first light emission control transistor and a second light emission control transistor, and the second light emission control module comprises a third light emission control transistor and a fourth light emission control transistor; wherein:
The first end of the first light-emitting control transistor is electrically connected with the first power supply end, the control end of the first light-emitting control transistor is electrically connected with the first light-emitting control signal line, and the second end of the first light-emitting control transistor is electrically connected with the first pole of the driving transistor;
the first end of the second light-emitting control transistor is electrically connected with the second electrode of the driving transistor, the control end of the second light-emitting control transistor is electrically connected with the first light-emitting control signal line, and the second end of the second light-emitting control transistor is electrically connected with the anode layer of the top-emitting light-emitting device;
the first end of the third light-emitting control transistor is electrically connected with the first power supply end, the control end of the third light-emitting control transistor is electrically connected with the second light-emitting control signal line, and the second end of the third light-emitting control transistor is electrically connected with the first electrode of the driving transistor;
the first end of the fourth light-emitting control transistor is electrically connected with the second electrode of the driving transistor, the control end of the fourth light-emitting control transistor is electrically connected with the second light-emitting control signal line, and the second end of the fourth light-emitting control transistor is electrically connected with the anode layer of the transparent display light-emitting device.
2. The array substrate of claim 1, wherein the top-emission light-emitting device and the transparent display light-emitting device comprise an anode layer, a light-emitting layer, and a cathode layer; wherein the anode layer of the top emission light emitting device comprises: the first transparent electrode layer, the metal layer and the second transparent electrode layer; the anode layer of the transparent display light emitting device includes a third transparent electrode layer.
3. The array substrate of claim 2, wherein the material of the first transparent electrode layer and the third transparent electrode layer comprises polycrystalline indium tin oxide; the material of the metal layer comprises silver; the material of the second transparent electrode layer comprises amorphous indium tin oxide.
4. A driving method of the array substrate according to any one of claims 1 to 3, comprising:
a first display mode, loading the same signals to a first light-emitting control signal line and a second light-emitting control signal line in each row of sub-pixels in sequence, so that a second electrode of the driving transistor is conducted with the top-emitting light-emitting device and the transparent display light-emitting device, and the top-emitting light-emitting device and the transparent display light-emitting device are driven to emit light;
a second display mode, loading a cut-off signal to a second light-emitting control signal line, and loading a conduction signal to a first light-emitting control signal line in each row of sub-pixels in turn, so that a second electrode of the driving transistor is conducted with the top-emitting light-emitting device, and the top-emitting light-emitting device is driven to emit light;
And in a third display mode, a cut-off signal is loaded on the first light-emitting control signal line, and a turn-on signal is loaded on the second light-emitting control signal line in each row of sub-pixels in sequence, so that the second electrode of the driving transistor and the transparent display light-emitting device are driven to emit light.
5. A method for manufacturing the array substrate according to any one of claims 1 to 3, the array substrate comprising a substrate, comprising:
forming a pixel circuit on a substrate;
and forming a top emission light emitting device and a transparent display light emitting device on one side of the pixel circuit, which is away from the substrate.
6. The method of manufacturing according to claim 5, wherein forming a top-emission light-emitting device and a transparent display light-emitting device on a side of the pixel circuit facing away from the substrate comprises:
forming an anode layer of the top emission light emitting device and an anode layer of the transparent display light emitting device by adopting a one-time composition process;
forming a luminescent layer on one side of the anode layer, which is away from the substrate by adopting a one-time composition process;
and forming a cathode layer on one side of the light-emitting layer, which is away from the substrate.
7. The method of manufacturing according to claim 6, wherein the forming the anode layer of the top emission light emitting device and the anode layer of the transparent display light emitting device by one patterning process comprises:
Sequentially forming a polycrystalline indium tin oxide layer, a silver layer and an amorphous indium tin oxide layer along the direction of the pixel circuit deviating from the substrate;
forming a photoresist covering a substrate base plate on the substrate base plate;
exposing and developing the photoresist by adopting a half-tone mask plate to enable the photoresist with the first thickness in the top emission luminous area and the photoresist with the second thickness in the transparent luminous area; wherein the first thickness is greater than the second thickness;
etching the substrate base plate, and reserving the polycrystalline indium tin oxide layer, the silver layer and the amorphous indium tin oxide layer in the top emission luminous region and the transparent luminous region;
processing the photoresist in the top emission light-emitting region and the transparent light-emitting region, removing the photoresist in the transparent light-emitting region, and thinning the photoresist in the top emission light-emitting region;
etching the substrate by adopting a first etching solution to remove the amorphous indium tin oxide layer and the silver layer in the transparent light-emitting area, and reserving the polycrystalline indium tin oxide layer in the transparent light-emitting area and reserving the polycrystalline indium tin oxide layer, the silver layer and the amorphous indium tin oxide layer in the top-emitting light-emitting area;
And removing the photoresist in the top-emission light-emitting region.
8. A display device comprising the array substrate according to any one of claims 1 to 3.
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